KR850005016A - 알루미늄 전해 캐패시터용 고전압 박막의 에칭공정 - Google Patents

알루미늄 전해 캐패시터용 고전압 박막의 에칭공정 Download PDF

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Publication number
KR850005016A
KR850005016A KR1019840008066A KR840008066A KR850005016A KR 850005016 A KR850005016 A KR 850005016A KR 1019840008066 A KR1019840008066 A KR 1019840008066A KR 840008066 A KR840008066 A KR 840008066A KR 850005016 A KR850005016 A KR 850005016A
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South Korea
Prior art keywords
thin film
high voltage
etching process
aluminum
aluminum electrolytic
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KR1019840008066A
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KR910009167B1 (ko
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라즈 아로라 멀크
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토마스 에이·브라이어디
노스 아메리칸 필립스 코포레이션
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Publication of KR850005016A publication Critical patent/KR850005016A/ko
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Publication of KR910009167B1 publication Critical patent/KR910009167B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/055—Etched foil electrodes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/04—Etching of light metals

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • ing And Chemical Polishing (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Electrolytic Production Of Metals (AREA)

Abstract

내용 없음

Description

알루미늄 전해 캐패시터용 고전압 박막의 에칭공정
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 및 제3도는 터넘 구조를 보이는, 종래의 방법으로 에칭된 알루미늄 커패시터 박막의 일부분의 회단면에 대한 SEM(주사전자 현미경) 사진.
제2도 및 제3도는 비교적 곧은 연장터널 구조체를 보이는, 본 발명에 따라 에칭된 알루미늄 커패시터 박막의 일부분의 횡단면에 대한 SEM 사진.

Claims (7)

  1. 직류의 영향하에서 알루미늄 전해 캐패시터 고전압 박막을 전해조에 통과시킴으로써 상기 박막을 에칭하는 공정으로서, 하이큐빅 구조를 갖는 박막은 70C/㎠ 내지 110C/㎠의 전하를 통과시키는 동안 70℃와 85℃ 사이의 온도에서 1.5 %내지 7%의 염산과 염화물로서 최고 2%의 알루미늄을 포함하는 전해조를 통과하는 것을 특징으로 하는 알루미늄 전해 커패시터용 고전압 박막의 에칭공정.
  2. 제1항에 있어서, 상기 알루미늄 박막의 두께는 100㎛이고 입방도가 70%나 그 이상인 것을 특징으로 하는 알루미늄 전해 커패시터용 고전압 박막의 에칭공정.
  3. 제1항에 있어서, 전해조에서의 염산의 농도는 3%인 것을 특징으로 하는 알루미늄 전해 커패시터용 고전압 박막의 에칭공정.
  4. 제1항에 있어서, 상기 전해조에서의 염화물로서의 알루미늄의 농도는 1%인 것을 특징으로 하는 알루미늄 전해 커패시터용 고전압 박막의 에칭공정.
  5. 제1항에 있어서, 상기 전해조의 온도는 75℃인 것을 특징으로 하는 알루미늄 전해 커패시터용 고전압 박막의 에칭공정.
  6. 제1항에 있어서, 전류밀도는 0.13A/㎠ 내지 0.85A/㎠의 범위에 있는 것을 특징으로 하는 알루미늄 전해 커패시터용 고전압 박막의 에칭공정.
  7. 제1항에 있어서, 에치쿨통은 80C/㎠과 90C/㎠ 사이의 범위에 있는 것을 특징으로 하는 안루미늄 전해 커패시터용 고전압 박막의 에칭공정.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840008066A 1983-12-20 1984-12-18 알루미늄 전해 커패시터용 고전압 박지의 에칭 공정 KR910009167B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US563,345 1983-12-20
US06/563,345 US4474657A (en) 1983-12-20 1983-12-20 Single step electro chemical etch process for high volt aluminum anode foil
US563345 1983-12-20

Publications (2)

Publication Number Publication Date
KR850005016A true KR850005016A (ko) 1985-08-19
KR910009167B1 KR910009167B1 (ko) 1991-10-31

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Application Number Title Priority Date Filing Date
KR1019840008066A KR910009167B1 (ko) 1983-12-20 1984-12-18 알루미늄 전해 커패시터용 고전압 박지의 에칭 공정

Country Status (5)

Country Link
US (1) US4474657A (ko)
EP (1) EP0147896B1 (ko)
JP (1) JPS6123798A (ko)
KR (1) KR910009167B1 (ko)
DE (1) DE3469572D1 (ko)

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US4518471A (en) * 1984-08-29 1985-05-21 North American Philips Corporation Two step electrochemical etch process for high volt aluminum anode foil
JP2787801B2 (ja) * 1994-03-10 1998-08-20 日本蓄電器工業株式会社 電解コンデンサ用アルミニウム電極箔のエッチング方法
FR2755111B1 (fr) * 1996-10-28 1998-12-31 Ceric Dispositif pour le transport de produits ceramiques
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US6325551B1 (en) 1999-12-08 2001-12-04 New Focus, Inc. Method and apparatus for optically aligning optical fibers with optical devices
US6736956B1 (en) 2001-05-07 2004-05-18 Pacesetter, Inc. Non-uniform etching of anode foil to produce higher capacitance gain without sacrificing foil strength
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US7150767B1 (en) 2003-11-03 2006-12-19 Pacesetter, Inc. Method for producing an electrode for a capacitor from foil
US7578924B1 (en) 2004-07-29 2009-08-25 Pacesetter, Inc. Process for producing high etch gains for electrolytic capacitor manufacturing
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US8206600B2 (en) * 2008-09-15 2012-06-26 Pacesetter, Inc. Nanoimprinting of an optic to control the etch pattern on electrolytic capacitor foil
US9090986B1 (en) 2014-01-30 2015-07-28 Pacesetter, Inc. Method for making electrode foils having reduced particle detachment and reduced leakage current
CN104630871B (zh) * 2015-01-13 2017-08-18 肇庆华锋电子铝箔股份有限公司 一种低压硬质高比容铝电极箔的腐蚀工艺方法
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US9969030B2 (en) 2016-05-12 2018-05-15 Pacesetter, Inc. Laser drilling of metal foils for assembly in an electrolytic capacitor
US9852849B2 (en) 2016-05-27 2017-12-26 Pacesetter, Inc. Using etch resist patterns and formation for facilitation of laser cutting, particle and leakage current reduction
US9976226B2 (en) 2016-07-28 2018-05-22 Pacesetter, Inc. Method of stressing oxides
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US10422050B2 (en) 2016-12-02 2019-09-24 Pacesetter, Inc. Process for using persulfate in a low pH etch solution to increase aluminum foil capacitance
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Also Published As

Publication number Publication date
DE3469572D1 (en) 1988-04-07
KR910009167B1 (ko) 1991-10-31
JPH0551680B2 (ko) 1993-08-03
EP0147896B1 (en) 1988-03-02
US4474657A (en) 1984-10-02
JPS6123798A (ja) 1986-02-01
EP0147896A1 (en) 1985-07-10

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