KR850001314A - 알루미늄 커패시터 박막 및 그 전해 에칭공정 - Google Patents
알루미늄 커패시터 박막 및 그 전해 에칭공정 Download PDFInfo
- Publication number
- KR850001314A KR850001314A KR1019840003854A KR840003854A KR850001314A KR 850001314 A KR850001314 A KR 850001314A KR 1019840003854 A KR1019840003854 A KR 1019840003854A KR 840003854 A KR840003854 A KR 840003854A KR 850001314 A KR850001314 A KR 850001314A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- electrolytic
- etching process
- electrolytic etching
- aluminum
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims 14
- 238000000034 method Methods 0.000 title claims 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims 5
- 229910052782 aluminium Inorganic materials 0.000 title claims 5
- 239000003990 capacitor Substances 0.000 title claims 5
- 238000000866 electrolytic etching Methods 0.000 title claims 5
- 230000004580 weight loss Effects 0.000 claims 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims 2
- 239000008151 electrolyte solution Substances 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims 1
- 239000004327 boric acid Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000011780 sodium chloride Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/055—Etched foil electrodes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/04—Etching of light metals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S204/00—Chemistry: electrical and wave energy
- Y10S204/08—AC plus DC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12431—Foil or filament smaller than 6 mils
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- ing And Chemical Polishing (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (4)
- 직류 및 고전류밀도를 이용한 제1산프리에치 및 제2양극을 포함하는 알루미늄 커패시터박막의 전해에칭공정으로서, 상기 제1전해조가 30℃ 내지 60℃의 온도로 유지되는 동안 최소 약 0.05mg/cm2의 상기 박막의 무게 손실이 이루어질 때까지 0.1 내지 2.0A/cm2의 전류밀도 및 15Hz 내지 100Hz의 주파수를 갖는 교류를 필요로 하면서 무게비로 1% 내지 6%의 HCl, 0% 내지 2%의 H3PO4및 0% 내지 2%의 HNO3를 포함하는 제1수성 전해조에 상기 박막을 담금으로써 박막이 프리에칭되고, 상기 박막에서 HCl을 제거하지 않고서 상기 전해용액이 80℃ 내지 100℃의 온도에서 유지되는 동안, 최소 약 7mg/cm2의 상기 박막의 총 무게 손실이 이루어질때까지 무게비로 18% 내지 26%의 NaCl과 0.3 내지 2%의 Na2SO4이나 1% 내지 4%의 붕산을 포함하는 제2수성전해용액에 상기 박막을 담금으로써 박막이 에칭되는 것을 특징으로 하는 알루미늄 커패시터박막의 전해에칭공정.
- 제1항에 있어서, 교류프리에칭 단계에서 이용된 전해조는 무게비로 0.5 내지 2%의 H3PO4를 포함하는 것을 특징으로 하는 알루미늄 커패시터 박막의 전해에칭공정.
- 제2항에 있어서, 프리에칭단계는 약 0.05mg/cm2내지 2.0mg/cm2의 박막의 무게손실이 이루어질때까지 계속되고 에칭단계는 상기 7mg/cm2내지 14mg/cm2의 박막의 전체무게 손실이 이루어질때까지 계속되는 것을 특징으로 하는 알루미늄 커패시터박막의 전해에칭공정.
- 제1항의 방법에 의해 제조된 전해 커패시터에 사용되도록 응용된 에칭된 알루미늄 박막.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US510530 | 1983-07-05 | ||
US06/510,530 US4437955A (en) | 1983-07-05 | 1983-07-05 | Combined AC and DC etching of aluminum foil |
Publications (1)
Publication Number | Publication Date |
---|---|
KR850001314A true KR850001314A (ko) | 1985-03-18 |
Family
ID=24031137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019840003854A KR850001314A (ko) | 1983-07-05 | 1984-07-04 | 알루미늄 커패시터 박막 및 그 전해 에칭공정 |
Country Status (7)
Country | Link |
---|---|
US (1) | US4437955A (ko) |
EP (1) | EP0133714B1 (ko) |
JP (1) | JPS6036700A (ko) |
KR (1) | KR850001314A (ko) |
BR (1) | BR8403273A (ko) |
CA (1) | CA1239900A (ko) |
DE (1) | DE3468444D1 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3222967A1 (de) * | 1982-06-19 | 1983-12-22 | Hoechst Ag, 6230 Frankfurt | Verfahren zur abtragenden modifizierung von elektrochemisch aufgerauhten traegermaterialien aus aluminium nd deren verwendung bei der herstellung von offsetdruckplatten |
DE3587234D1 (de) * | 1985-04-12 | 1993-05-06 | Luigi Salvadori | Verfahren zur herstellung einer aluminiumfolie fuer elektrolytkondensatoren und elektrolytkondensator aus so hergestellten aluminiumfolien. |
DE4001466A1 (de) * | 1990-01-19 | 1991-07-25 | Hoechst Ag | Verfahren zur elektrochemischen aufrauhung von aluminium fuer druckplattentraeger |
US5143591A (en) * | 1991-06-11 | 1992-09-01 | U.S. Philips Corporation | Method of producing ultra stable aluminum oxide for high volt electrolytic capacitors and product thereof |
DE4129909A1 (de) * | 1991-09-09 | 1993-03-11 | Hoechst Ag | Verfahren zum aufrauhen von aluminium bzw. von aluminiumlegierungen als traegermaterial fuer druckplatten und eine druckplatte |
DE4232636C2 (de) * | 1992-09-29 | 1996-04-11 | Siemens Ag | Verfahren zum Herstellen von Elektrodenfolien für, insbesondere Hochvolt-, Elektrolytkondensatoren |
US5405493A (en) * | 1994-01-26 | 1995-04-11 | Kdk Corporation | Method of etching aluminum foil |
US6224738B1 (en) | 1999-11-09 | 2001-05-01 | Pacesetter, Inc. | Method for a patterned etch with electrolytically grown mask |
US20020149902A1 (en) * | 2001-02-14 | 2002-10-17 | Matsushita Electric Industrial Co., Ltd. | Electrode foil for aluminum electrolytic capacitor and method of manufacturing the same |
CN103774205A (zh) * | 2014-01-06 | 2014-05-07 | 广西贺州市桂东电子科技有限责任公司 | 中高压阳极铝箔二次纯化学侵蚀扩孔方法 |
CN109609997B (zh) * | 2018-12-06 | 2020-10-09 | 东莞东阳光科研发有限公司 | 铝箔腐蚀方法及铝箔 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB966627A (en) | 1962-04-09 | 1964-08-12 | British Dielectric Res Ltd | Improvements in or relating to the electrolytic etching of anodisable metal foil |
US3779877A (en) | 1972-02-22 | 1973-12-18 | Sprague Electric Co | Electrolytic etching of aluminum foil |
US3935080A (en) | 1974-10-02 | 1976-01-27 | Polychrome Corporation | Method of producing an aluminum base sheet for a printing plate |
JPS52141444A (en) * | 1976-05-21 | 1977-11-25 | Hitachi Denkaihaku Kenkyusho | Method of etching aluminum |
US4297184A (en) | 1980-02-19 | 1981-10-27 | United Chemi-Con, Inc. | Method of etching aluminum |
US4374710A (en) | 1982-03-18 | 1983-02-22 | American Hoechst Corporation | Electrolytic graining of aluminum with nitric and oxalic acids |
-
1983
- 1983-07-05 US US06/510,530 patent/US4437955A/en not_active Expired - Fee Related
-
1984
- 1984-06-28 CA CA000457767A patent/CA1239900A/en not_active Expired
- 1984-06-29 DE DE8484200946T patent/DE3468444D1/de not_active Expired
- 1984-06-29 EP EP84200946A patent/EP0133714B1/en not_active Expired
- 1984-07-02 BR BR8403273A patent/BR8403273A/pt unknown
- 1984-07-04 JP JP59137401A patent/JPS6036700A/ja active Granted
- 1984-07-04 KR KR1019840003854A patent/KR850001314A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US4437955A (en) | 1984-03-20 |
JPS6229519B2 (ko) | 1987-06-26 |
CA1239900A (en) | 1988-08-02 |
JPS6036700A (ja) | 1985-02-25 |
EP0133714A1 (en) | 1985-03-06 |
DE3468444D1 (en) | 1988-02-11 |
BR8403273A (pt) | 1985-06-11 |
EP0133714B1 (en) | 1988-01-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |