KR840002468B1 - 실리콘 함유층의 제조 공정 - Google Patents

실리콘 함유층의 제조 공정 Download PDF

Info

Publication number
KR840002468B1
KR840002468B1 KR1019810002272A KR810002272A KR840002468B1 KR 840002468 B1 KR840002468 B1 KR 840002468B1 KR 1019810002272 A KR1019810002272 A KR 1019810002272A KR 810002272 A KR810002272 A KR 810002272A KR 840002468 B1 KR840002468 B1 KR 840002468B1
Authority
KR
South Korea
Prior art keywords
layer
silicon
temperature
deposition
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019810002272A
Other languages
English (en)
Korean (ko)
Other versions
KR830006827A (ko
Inventor
카쁘랑 다니엘
랭도르 피에르
끄립톤 에릭
Original Assignee
똥송쎄 에스에프
재끄 보와르
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 똥송쎄 에스에프, 재끄 보와르 filed Critical 똥송쎄 에스에프
Publication of KR830006827A publication Critical patent/KR830006827A/ko
Application granted granted Critical
Publication of KR840002468B1 publication Critical patent/KR840002468B1/ko
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019810002272A 1980-06-24 1981-06-23 실리콘 함유층의 제조 공정 Expired KR840002468B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR8013968A FR2485810A1 (fr) 1980-06-24 1980-06-24 Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede
FR80.13968 1980-06-24
FR80-13968 1980-06-24

Publications (2)

Publication Number Publication Date
KR830006827A KR830006827A (ko) 1983-10-06
KR840002468B1 true KR840002468B1 (ko) 1984-12-29

Family

ID=9243446

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019810002272A Expired KR840002468B1 (ko) 1980-06-24 1981-06-23 실리콘 함유층의 제조 공정

Country Status (6)

Country Link
US (1) US4344984A (enExample)
EP (1) EP0042773B1 (enExample)
JP (1) JPS5731182A (enExample)
KR (1) KR840002468B1 (enExample)
DE (1) DE3160193D1 (enExample)
FR (1) FR2485810A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8103649A (nl) * 1981-08-03 1983-03-01 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van de halfgeleiderinrichting.
JP2686928B2 (ja) * 1985-08-26 1997-12-08 アンリツ株式会社 シリコン・ゲルマニウム混晶薄膜導電体
US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
US4690830A (en) * 1986-02-18 1987-09-01 Solarex Corporation Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
EG18056A (en) * 1986-02-18 1991-11-30 Solarex Corp Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices
US5917195A (en) * 1995-02-17 1999-06-29 B.A. Painter, Iii Phonon resonator and method for its production
KR20010053459A (ko) * 1998-07-09 2001-06-25 조셉 제이. 스위니 비정질 및 다결정 실리콘 게르마늄 합금 박막 형성 방법및 장치
GB2442198B (en) * 2006-09-29 2011-06-29 Alan Frederick Sandy Toilet Device
US8546818B2 (en) 2007-06-12 2013-10-01 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current-guiding structure
US8148733B2 (en) 2007-06-12 2012-04-03 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US7759670B2 (en) * 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur

Also Published As

Publication number Publication date
FR2485810B1 (enExample) 1984-01-13
US4344984A (en) 1982-08-17
KR830006827A (ko) 1983-10-06
FR2485810A1 (fr) 1981-12-31
EP0042773A1 (fr) 1981-12-30
DE3160193D1 (en) 1983-05-26
EP0042773B1 (fr) 1983-04-20
JPS5731182A (en) 1982-02-19

Similar Documents

Publication Publication Date Title
EP0122778B1 (en) Narrow band gap photovoltaic devices with enhanced open circuit voltage
US4517223A (en) Method of making amorphous semiconductor alloys and devices using microwave energy
US4615905A (en) Method of depositing semiconductor films by free radical generation
US4504518A (en) Method of making amorphous semiconductor alloys and devices using microwave energy
EP0062471B1 (en) Thin film solar cell
DE69434949T2 (de) Verfahren und Vorrichtung zur Bildung eines abgeschiedenen Films
US4409605A (en) Amorphous semiconductors equivalent to crystalline semiconductors
GB2124826A (en) Amorphous semiconductor materials
IT8224631A1 (it) Dispositivo fotovoltaico a piu! strati di semiconduttore e procedimento per la sua fabbricazione
US5397737A (en) Deposition of device quality low H content, amorphous silicon films
EP0233613B1 (en) Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
KR840002468B1 (ko) 실리콘 함유층의 제조 공정
US4520380A (en) Amorphous semiconductors equivalent to crystalline semiconductors
US4710786A (en) Wide band gap semiconductor alloy material
IE54573B1 (en) Improved back reflector system and devices utilizing same
JP2692091B2 (ja) 炭化ケイ素半導体膜およびその製造方法
US5085711A (en) Photovoltaic device
US4839312A (en) Fluorinated precursors from which to fabricate amorphous semiconductor material
US6124186A (en) Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates with increased stability using the hot wire filament technique
US4701343A (en) Method of depositing thin films using microwave energy
JP3181121B2 (ja) 堆積膜形成方法
JPH04192373A (ja) 光起電力素子
JP3487580B2 (ja) 堆積膜形成方法および堆積膜形成装置
JPS62169324A (ja) 被膜作製方法
JPH0613636A (ja) 半導体装置

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19810623

PG1501 Laying open of application
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19840510

Patent event code: PE09021S01D

PG1605 Publication of application before grant of patent

Comment text: Decision on Publication of Application

Patent event code: PG16051S01I

Patent event date: 19841210

PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19850314

PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 19850325

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 19850325

End annual number: 3

Start annual number: 1

PR1001 Payment of annual fee

Payment date: 19871205

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 19881206

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 19891219

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 19901207

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 19911119

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 19921109

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 19931122

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 19941130

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 19951209

Start annual number: 12

End annual number: 12

PC1801 Expiration of term