FR2485810B1 - - Google Patents

Info

Publication number
FR2485810B1
FR2485810B1 FR8013968A FR8013968A FR2485810B1 FR 2485810 B1 FR2485810 B1 FR 2485810B1 FR 8013968 A FR8013968 A FR 8013968A FR 8013968 A FR8013968 A FR 8013968A FR 2485810 B1 FR2485810 B1 FR 2485810B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8013968A
Other languages
French (fr)
Other versions
FR2485810A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8013968A priority Critical patent/FR2485810A1/fr
Priority to DE8181400880T priority patent/DE3160193D1/de
Priority to EP81400880A priority patent/EP0042773B1/fr
Priority to US06/274,381 priority patent/US4344984A/en
Priority to JP9733581A priority patent/JPS5731182A/ja
Priority to KR1019810002272A priority patent/KR840002468B1/ko
Publication of FR2485810A1 publication Critical patent/FR2485810A1/fr
Application granted granted Critical
Publication of FR2485810B1 publication Critical patent/FR2485810B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
FR8013968A 1980-06-24 1980-06-24 Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede Granted FR2485810A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR8013968A FR2485810A1 (fr) 1980-06-24 1980-06-24 Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede
DE8181400880T DE3160193D1 (en) 1980-06-24 1981-06-02 Method of manufacturing a silicon-containing layer and its application to photoelectric conversion devices
EP81400880A EP0042773B1 (fr) 1980-06-24 1981-06-02 Procédé de réalisation d'une couche contenant du silicium, et son application aux dispositifs de conversion photoélectrique
US06/274,381 US4344984A (en) 1980-06-24 1981-06-17 Process for producing a layer containing silicon
JP9733581A JPS5731182A (en) 1980-06-24 1981-06-23 Method of producing layer containing silicon and photoelectric converting device thereby
KR1019810002272A KR840002468B1 (ko) 1980-06-24 1981-06-23 실리콘 함유층의 제조 공정

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8013968A FR2485810A1 (fr) 1980-06-24 1980-06-24 Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede

Publications (2)

Publication Number Publication Date
FR2485810A1 FR2485810A1 (fr) 1981-12-31
FR2485810B1 true FR2485810B1 (enExample) 1984-01-13

Family

ID=9243446

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8013968A Granted FR2485810A1 (fr) 1980-06-24 1980-06-24 Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede

Country Status (6)

Country Link
US (1) US4344984A (enExample)
EP (1) EP0042773B1 (enExample)
JP (1) JPS5731182A (enExample)
KR (1) KR840002468B1 (enExample)
DE (1) DE3160193D1 (enExample)
FR (1) FR2485810A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8103649A (nl) * 1981-08-03 1983-03-01 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van de halfgeleiderinrichting.
JP2686928B2 (ja) * 1985-08-26 1997-12-08 アンリツ株式会社 シリコン・ゲルマニウム混晶薄膜導電体
US4690830A (en) * 1986-02-18 1987-09-01 Solarex Corporation Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
EG18056A (en) * 1986-02-18 1991-11-30 Solarex Corp Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices
US5917195A (en) * 1995-02-17 1999-06-29 B.A. Painter, Iii Phonon resonator and method for its production
WO2000003061A1 (en) * 1998-07-09 2000-01-20 Applied Materials, Inc. Method and apparatus for forming amorphous and polycrystalline silicon germanium alloy films
GB2442198B (en) * 2006-09-29 2011-06-29 Alan Frederick Sandy Toilet Device
US8546818B2 (en) 2007-06-12 2013-10-01 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current-guiding structure
US7759670B2 (en) * 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US8148733B2 (en) 2007-06-12 2012-04-03 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur

Also Published As

Publication number Publication date
US4344984A (en) 1982-08-17
DE3160193D1 (en) 1983-05-26
FR2485810A1 (fr) 1981-12-31
EP0042773B1 (fr) 1983-04-20
EP0042773A1 (fr) 1981-12-30
KR830006827A (ko) 1983-10-06
JPS5731182A (en) 1982-02-19
KR840002468B1 (ko) 1984-12-29

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Legal Events

Date Code Title Description
ST Notification of lapse