KR20260015791A - 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법, 및 반사형 마스크의 제조 방법 - Google Patents

반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법, 및 반사형 마스크의 제조 방법

Info

Publication number
KR20260015791A
KR20260015791A KR1020257035848A KR20257035848A KR20260015791A KR 20260015791 A KR20260015791 A KR 20260015791A KR 1020257035848 A KR1020257035848 A KR 1020257035848A KR 20257035848 A KR20257035848 A KR 20257035848A KR 20260015791 A KR20260015791 A KR 20260015791A
Authority
KR
South Korea
Prior art keywords
film
reflective mask
euv light
mask blank
multilayer reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257035848A
Other languages
English (en)
Korean (ko)
Inventor
에이타 나카니시
다이지로 아카기
Original Assignee
에이지씨 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이지씨 가부시키가이샤 filed Critical 에이지씨 가부시키가이샤
Publication of KR20260015791A publication Critical patent/KR20260015791A/ko
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020257035848A 2023-05-31 2024-05-14 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법, 및 반사형 마스크의 제조 방법 Pending KR20260015791A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023090180 2023-05-31
JPJP-P-2023-090180 2023-05-31
PCT/JP2024/017857 WO2024247713A1 (ja) 2023-05-31 2024-05-14 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Publications (1)

Publication Number Publication Date
KR20260015791A true KR20260015791A (ko) 2026-02-03

Family

ID=93657755

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257035848A Pending KR20260015791A (ko) 2023-05-31 2024-05-14 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법, 및 반사형 마스크의 제조 방법

Country Status (5)

Country Link
US (1) US20260036898A1 (https=)
JP (1) JPWO2024247713A1 (https=)
KR (1) KR20260015791A (https=)
TW (1) TW202449495A (https=)
WO (1) WO2024247713A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019225736A1 (ja) 2018-05-25 2019-11-28 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP2021081644A (ja) 2019-11-21 2021-05-27 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法
JP2022135928A (ja) 2021-03-03 2022-09-15 信越化学工業株式会社 反射型マスクブランク及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5638769B2 (ja) * 2009-02-04 2014-12-10 Hoya株式会社 反射型マスクブランクの製造方法及び反射型マスクの製造方法
US9618836B2 (en) * 2014-04-22 2017-04-11 Asahi Glass Company, Limited Reflective mask blank for EUV lithography, substrate with funtion film for the mask blank, and methods for their production
WO2018159785A1 (ja) * 2017-03-02 2018-09-07 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
SG11202109240PA (en) * 2019-02-28 2021-09-29 Hoya Corp Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
KR20210155863A (ko) * 2020-06-16 2021-12-24 삼성전자주식회사 극자외선 리소그래피용 위상 반전 마스크 및 이를 이용한 반도체 소자의 제조 방법
US11619875B2 (en) * 2020-06-29 2023-04-04 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
JP7318607B2 (ja) * 2020-07-28 2023-08-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP7722380B2 (ja) * 2020-09-04 2025-08-13 Ａｇｃ株式会社 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法
KR20250153856A (ko) * 2021-12-13 2025-10-27 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019225736A1 (ja) 2018-05-25 2019-11-28 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP2021081644A (ja) 2019-11-21 2021-05-27 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法
JP2022135928A (ja) 2021-03-03 2022-09-15 信越化学工業株式会社 反射型マスクブランク及びその製造方法

Also Published As

Publication number Publication date
JPWO2024247713A1 (https=) 2024-12-05
WO2024247713A1 (ja) 2024-12-05
US20260036898A1 (en) 2026-02-05
TW202449495A (zh) 2024-12-16

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