KR20250020467A - 산화성 할로겐-공여 환경에서의 유기 금속 레지스트의 가스 기반 현상 - Google Patents
산화성 할로겐-공여 환경에서의 유기 금속 레지스트의 가스 기반 현상 Download PDFInfo
- Publication number
- KR20250020467A KR20250020467A KR1020247041781A KR20247041781A KR20250020467A KR 20250020467 A KR20250020467 A KR 20250020467A KR 1020247041781 A KR1020247041781 A KR 1020247041781A KR 20247041781 A KR20247041781 A KR 20247041781A KR 20250020467 A KR20250020467 A KR 20250020467A
- Authority
- KR
- South Korea
- Prior art keywords
- developing
- gas
- carbon
- radiation
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263349187P | 2022-06-06 | 2022-06-06 | |
| US63/349,187 | 2022-06-06 | ||
| PCT/US2023/024395 WO2023239628A1 (en) | 2022-06-06 | 2023-06-05 | Gas-based development of organometallic resist in an oxidizing halogen-donating environment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20250020467A true KR20250020467A (ko) | 2025-02-11 |
Family
ID=89118795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247041781A Pending KR20250020467A (ko) | 2022-06-06 | 2023-06-05 | 산화성 할로겐-공여 환경에서의 유기 금속 레지스트의 가스 기반 현상 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230408916A1 (enExample) |
| EP (1) | EP4537162A4 (enExample) |
| JP (1) | JP2025519455A (enExample) |
| KR (1) | KR20250020467A (enExample) |
| TW (1) | TW202407473A (enExample) |
| WO (1) | WO2023239628A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250271755A1 (en) * | 2024-02-28 | 2025-08-28 | Inpria Corporation | Controlled environment processing, rest steps, and baking processes for metal oxide-based resist patterning |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20260059663A (ko) * | 2015-10-13 | 2026-04-30 | 인프리아 코포레이션 | 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝 |
| CN113227909B (zh) * | 2018-12-20 | 2025-07-04 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| TWI837391B (zh) * | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| EP4651192A3 (en) * | 2020-01-15 | 2026-03-04 | Lam Research Corporation | Underlayer for photoresist adhesion and dose reduction |
| EP4115242A4 (en) * | 2020-03-02 | 2024-03-13 | Inpria Corporation | PROCESSING ENVIRONMENT FOR THE FORMATION OF INORGANIC RESERVE PATTERNS |
| JP7774611B2 (ja) * | 2020-07-17 | 2025-11-21 | ラム リサーチ コーポレーション | 被膜を形成するための方法 |
-
2023
- 2023-06-05 KR KR1020247041781A patent/KR20250020467A/ko active Pending
- 2023-06-05 TW TW112120807A patent/TW202407473A/zh unknown
- 2023-06-05 JP JP2024571953A patent/JP2025519455A/ja active Pending
- 2023-06-05 US US18/205,694 patent/US20230408916A1/en active Pending
- 2023-06-05 WO PCT/US2023/024395 patent/WO2023239628A1/en not_active Ceased
- 2023-06-05 EP EP23820308.7A patent/EP4537162A4/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20230408916A1 (en) | 2023-12-21 |
| WO2023239628A1 (en) | 2023-12-14 |
| EP4537162A4 (en) | 2026-04-29 |
| EP4537162A1 (en) | 2025-04-16 |
| TW202407473A (zh) | 2024-02-16 |
| JP2025519455A (ja) | 2025-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7836664B2 (ja) | ハロゲン化化学物質によるフォトレジスト現像 | |
| TWI842101B (zh) | 增強顯影對比度之方法及基板處理設備 | |
| US12278125B2 (en) | Integrated dry processes for patterning radiation photoresist patterning | |
| JP7553489B2 (ja) | フォトレジスト膜のチャンバ乾式洗浄 | |
| KR102937721B1 (ko) | 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 (bake) 전략들 | |
| US12504692B2 (en) | Cyclic development of metal oxide based photoresist for etch stop deterrence | |
| TW202239942A (zh) | 利用有機蒸氣的光阻顯影 | |
| TW202401131A (zh) | 含金屬光阻的顯影後處理 | |
| JP2011520242A (ja) | フォトレジスト又はドライエッチングを必要としないパターン化ハードマスク薄膜(rfp)形成のプロセスシーケンス | |
| KR20250069677A (ko) | 금속-함유 포토레지스트에 대한 올-인-원 건식 현상 | |
| US20230408916A1 (en) | Gas-based development of organometallic resist in an oxidizing halogen-donating environment | |
| KR20250079204A (ko) | 열 및 플라즈마 공정을 사용한 건식 챔버 세정 | |
| CN121153009A (zh) | 光致抗蚀剂工艺的终点检测与追踪 | |
| JP7341309B2 (ja) | 基板処理方法及び基板処理システム | |
| KR20250159726A (ko) | 다단계 열 챔버 세정 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20241217 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application |