KR20250020467A - 산화성 할로겐-공여 환경에서의 유기 금속 레지스트의 가스 기반 현상 - Google Patents

산화성 할로겐-공여 환경에서의 유기 금속 레지스트의 가스 기반 현상 Download PDF

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Publication number
KR20250020467A
KR20250020467A KR1020247041781A KR20247041781A KR20250020467A KR 20250020467 A KR20250020467 A KR 20250020467A KR 1020247041781 A KR1020247041781 A KR 1020247041781A KR 20247041781 A KR20247041781 A KR 20247041781A KR 20250020467 A KR20250020467 A KR 20250020467A
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KR
South Korea
Prior art keywords
developing
gas
carbon
radiation
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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KR1020247041781A
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English (en)
Korean (ko)
Inventor
피터 데 쉐퍼
브라이언 제이. 카르디네우
Original Assignee
인프리아 코포레이션
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Application filed by 인프리아 코포레이션 filed Critical 인프리아 코포레이션
Publication of KR20250020467A publication Critical patent/KR20250020467A/ko
Pending legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/36Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0042Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/38Treatment before imagewise removal, e.g. prebaking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020247041781A 2022-06-06 2023-06-05 산화성 할로겐-공여 환경에서의 유기 금속 레지스트의 가스 기반 현상 Pending KR20250020467A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263349187P 2022-06-06 2022-06-06
US63/349,187 2022-06-06
PCT/US2023/024395 WO2023239628A1 (en) 2022-06-06 2023-06-05 Gas-based development of organometallic resist in an oxidizing halogen-donating environment

Publications (1)

Publication Number Publication Date
KR20250020467A true KR20250020467A (ko) 2025-02-11

Family

ID=89118795

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247041781A Pending KR20250020467A (ko) 2022-06-06 2023-06-05 산화성 할로겐-공여 환경에서의 유기 금속 레지스트의 가스 기반 현상

Country Status (6)

Country Link
US (1) US20230408916A1 (enExample)
EP (1) EP4537162A4 (enExample)
JP (1) JP2025519455A (enExample)
KR (1) KR20250020467A (enExample)
TW (1) TW202407473A (enExample)
WO (1) WO2023239628A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250271755A1 (en) * 2024-02-28 2025-08-28 Inpria Corporation Controlled environment processing, rest steps, and baking processes for metal oxide-based resist patterning

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20260059663A (ko) * 2015-10-13 2026-04-30 인프리아 코포레이션 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝
CN113227909B (zh) * 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TWI837391B (zh) * 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
EP4651192A3 (en) * 2020-01-15 2026-03-04 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
EP4115242A4 (en) * 2020-03-02 2024-03-13 Inpria Corporation PROCESSING ENVIRONMENT FOR THE FORMATION OF INORGANIC RESERVE PATTERNS
JP7774611B2 (ja) * 2020-07-17 2025-11-21 ラム リサーチ コーポレーション 被膜を形成するための方法

Also Published As

Publication number Publication date
US20230408916A1 (en) 2023-12-21
WO2023239628A1 (en) 2023-12-14
EP4537162A4 (en) 2026-04-29
EP4537162A1 (en) 2025-04-16
TW202407473A (zh) 2024-02-16
JP2025519455A (ja) 2025-06-26

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Date Code Title Description
PA0105 International application

Patent event date: 20241217

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application