KR20250012736A - Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법 - Google Patents

Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법 Download PDF

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Publication number
KR20250012736A
KR20250012736A KR1020257001411A KR20257001411A KR20250012736A KR 20250012736 A KR20250012736 A KR 20250012736A KR 1020257001411 A KR1020257001411 A KR 1020257001411A KR 20257001411 A KR20257001411 A KR 20257001411A KR 20250012736 A KR20250012736 A KR 20250012736A
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KR
South Korea
Prior art keywords
film
gas
mask blank
etching
euv lithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257001411A
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English (en)
Korean (ko)
Inventor
다이지로 아카기
히로토모 가와하라
겐이치 사사키
이치로 이시카와
도시유키 우노
Original Assignee
에이지씨 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이지씨 가부시키가이샤 filed Critical 에이지씨 가부시키가이샤
Publication of KR20250012736A publication Critical patent/KR20250012736A/ko
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020257001411A 2020-12-03 2021-11-26 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법 Pending KR20250012736A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2020201198 2020-12-03
JPJP-P-2020-201198 2020-12-03
JP2021174692 2021-10-26
JPJP-P-2021-174692 2021-10-26
KR1020237017782A KR102780958B1 (ko) 2020-12-03 2021-11-26 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법
PCT/JP2021/043502 WO2022118762A1 (ja) 2020-12-03 2021-11-26 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020237017782A Division KR102780958B1 (ko) 2020-12-03 2021-11-26 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법

Publications (1)

Publication Number Publication Date
KR20250012736A true KR20250012736A (ko) 2025-01-24

Family

ID=81853913

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020257001411A Pending KR20250012736A (ko) 2020-12-03 2021-11-26 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법
KR1020237017782A Active KR102780958B1 (ko) 2020-12-03 2021-11-26 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020237017782A Active KR102780958B1 (ko) 2020-12-03 2021-11-26 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법

Country Status (5)

Country Link
US (1) US20230288794A1 (https=)
JP (3) JP7485084B2 (https=)
KR (2) KR20250012736A (https=)
TW (1) TWI912418B (https=)
WO (1) WO2022118762A1 (https=)

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JP7612408B2 (ja) * 2020-12-22 2025-01-14 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体デバイスの製造方法
WO2022138434A1 (ja) * 2020-12-25 2022-06-30 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
US12181790B2 (en) * 2021-03-03 2024-12-31 Shin-Etsu Chemical Co., Ltd. Reflective mask blank and reflective mask
JP7392236B1 (ja) 2022-07-05 2023-12-06 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
WO2024009819A1 (ja) 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
WO2024024513A1 (ja) * 2022-07-25 2024-02-01 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
CN116165848B (zh) * 2022-09-08 2026-04-21 苏州江泓电子科技有限公司 一种多层膜材料、极紫外光反射镜及其制备方法和应用
WO2024162084A1 (ja) * 2023-01-31 2024-08-08 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
JP2025027983A (ja) * 2023-08-16 2025-02-28 信越化学工業株式会社 反射型マスクブランク、及び反射型マスクの製造方法
JP7681153B1 (ja) 2024-04-11 2025-05-21 テクセンドフォトマスク株式会社 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法
WO2025239179A1 (ja) * 2024-05-13 2025-11-20 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法
WO2025253899A1 (ja) * 2024-06-03 2025-12-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法
WO2026042468A1 (ja) * 2024-08-22 2026-02-26 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
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JPS6343690U (https=) 1986-09-09 1988-03-23
JP3366572B2 (ja) 1998-06-08 2003-01-14 富士通株式会社 Ｘ線露光用マスク及びその作成方法

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TWI267704B (en) 1999-07-02 2006-12-01 Asml Netherlands Bv Capping layer for EUV optical elements
US20030008148A1 (en) 2001-07-03 2003-01-09 Sasa Bajt Optimized capping layers for EUV multilayers
DE10150874A1 (de) * 2001-10-04 2003-04-30 Zeiss Carl Optisches Element und Verfahren zu dessen Herstellung sowie ein Lithographiegerät und ein Verfahren zur Herstellung eines Halbleiterbauelements
JP2006173446A (ja) * 2004-12-17 2006-06-29 Nikon Corp 極端紫外線用の光学素子及びこれを用いた投影露光装置
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KR102402767B1 (ko) * 2017-12-21 2022-05-26 삼성전자주식회사 극자외선 마스크 블랭크, 극자외선 마스크 블랭크를 이용하여 제조된 포토마스크, 포토마스크를 이용한 리소그래피 장치 및 포토마스크를 이용한 반도체 장치 제조 방법
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JPS6343690U (https=) 1986-09-09 1988-03-23
JP3366572B2 (ja) 1998-06-08 2003-01-14 富士通株式会社 Ｘ線露光用マスク及びその作成方法

Also Published As

Publication number Publication date
TW202230019A (zh) 2022-08-01
TWI912418B (zh) 2026-01-21
JP2024099662A (ja) 2024-07-25
JP7605362B2 (ja) 2024-12-24
KR20230109644A (ko) 2023-07-20
JPWO2022118762A1 (https=) 2022-06-09
JP7485084B2 (ja) 2024-05-16
JP2025029113A (ja) 2025-03-05
US20230288794A1 (en) 2023-09-14
KR102780958B1 (ko) 2025-03-17
WO2022118762A1 (ja) 2022-06-09

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