JPWO2022118762A1 - - Google Patents

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Publication number
JPWO2022118762A1
JPWO2022118762A1 JP2022566893A JP2022566893A JPWO2022118762A1 JP WO2022118762 A1 JPWO2022118762 A1 JP WO2022118762A1 JP 2022566893 A JP2022566893 A JP 2022566893A JP 2022566893 A JP2022566893 A JP 2022566893A JP WO2022118762 A1 JPWO2022118762 A1 JP WO2022118762A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022566893A
Other languages
Japanese (ja)
Other versions
JPWO2022118762A5 (https=
JP7485084B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022118762A1 publication Critical patent/JPWO2022118762A1/ja
Publication of JPWO2022118762A5 publication Critical patent/JPWO2022118762A5/ja
Priority to JP2024068078A priority Critical patent/JP7605362B2/ja
Application granted granted Critical
Publication of JP7485084B2 publication Critical patent/JP7485084B2/ja
Priority to JP2024210865A priority patent/JP2025029113A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2022566893A 2020-12-03 2021-11-26 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法 Active JP7485084B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024068078A JP7605362B2 (ja) 2020-12-03 2024-04-19 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP2024210865A JP2025029113A (ja) 2020-12-03 2024-12-04 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020201198 2020-12-03
JP2020201198 2020-12-03
JP2021174692 2021-10-26
JP2021174692 2021-10-26
PCT/JP2021/043502 WO2022118762A1 (ja) 2020-12-03 2021-11-26 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024068078A Division JP7605362B2 (ja) 2020-12-03 2024-04-19 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法

Publications (3)

Publication Number Publication Date
JPWO2022118762A1 true JPWO2022118762A1 (https=) 2022-06-09
JPWO2022118762A5 JPWO2022118762A5 (https=) 2023-12-14
JP7485084B2 JP7485084B2 (ja) 2024-05-16

Family

ID=81853913

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2022566893A Active JP7485084B2 (ja) 2020-12-03 2021-11-26 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP2024068078A Active JP7605362B2 (ja) 2020-12-03 2024-04-19 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP2024210865A Pending JP2025029113A (ja) 2020-12-03 2024-12-04 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024068078A Active JP7605362B2 (ja) 2020-12-03 2024-04-19 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP2024210865A Pending JP2025029113A (ja) 2020-12-03 2024-12-04 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法

Country Status (5)

Country Link
US (1) US20230288794A1 (https=)
JP (3) JP7485084B2 (https=)
KR (2) KR102780958B1 (https=)
TW (1) TWI912418B (https=)
WO (1) WO2022118762A1 (https=)

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JP7612408B2 (ja) * 2020-12-22 2025-01-14 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体デバイスの製造方法
US20230418148A1 (en) * 2020-12-25 2023-12-28 Hoya Corporation Multilayer reflective film-equipped substrate, reflective mask blank, reflective mask, and method for producing semiconductor device
US12181790B2 (en) * 2021-03-03 2024-12-31 Shin-Etsu Chemical Co., Ltd. Reflective mask blank and reflective mask
JP7392236B1 (ja) 2022-07-05 2023-12-06 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
WO2024009819A1 (ja) * 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
WO2024024513A1 (ja) * 2022-07-25 2024-02-01 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
CN116165848B (zh) * 2022-09-08 2026-04-21 苏州江泓电子科技有限公司 一种多层膜材料、极紫外光反射镜及其制备方法和应用
WO2024162084A1 (ja) * 2023-01-31 2024-08-08 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
JP2025027983A (ja) * 2023-08-16 2025-02-28 信越化学工業株式会社 反射型マスクブランク、及び反射型マスクの製造方法
JP7681153B1 (ja) * 2024-04-11 2025-05-21 テクセンドフォトマスク株式会社 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法
WO2025239179A1 (ja) * 2024-05-13 2025-11-20 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法
TW202548405A (zh) * 2024-06-03 2025-12-16 日商Ａｇｃ股份有限公司 反射型光罩基底、反射型光罩及反射型光罩之製造方法
WO2026042468A1 (ja) * 2024-08-22 2026-02-26 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法

Citations (2)

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JP2013514651A (ja) * 2009-12-18 2013-04-25 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖリソグラフィ用反射マスク
JP2019049720A (ja) * 2013-05-31 2019-03-28 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

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KR102402767B1 (ko) * 2017-12-21 2022-05-26 삼성전자주식회사 극자외선 마스크 블랭크, 극자외선 마스크 블랭크를 이용하여 제조된 포토마스크, 포토마스크를 이용한 리소그래피 장치 및 포토마스크를 이용한 반도체 장치 제조 방법
KR102906466B1 (ko) * 2018-05-25 2026-01-02 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법
JP7018162B2 (ja) * 2019-02-28 2022-02-09 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

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JP2013514651A (ja) * 2009-12-18 2013-04-25 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖリソグラフィ用反射マスク
JP2019049720A (ja) * 2013-05-31 2019-03-28 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

Also Published As

Publication number Publication date
US20230288794A1 (en) 2023-09-14
KR20230109644A (ko) 2023-07-20
TW202230019A (zh) 2022-08-01
JP7485084B2 (ja) 2024-05-16
TWI912418B (zh) 2026-01-21
JP2024099662A (ja) 2024-07-25
WO2022118762A1 (ja) 2022-06-09
JP2025029113A (ja) 2025-03-05
KR102780958B1 (ko) 2025-03-17
JP7605362B2 (ja) 2024-12-24
KR20250012736A (ko) 2025-01-24

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