KR20240170533A - 레지스트 조성물 및 레지스트 패턴 형성 방법 - Google Patents

레지스트 조성물 및 레지스트 패턴 형성 방법 Download PDF

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Publication number
KR20240170533A
KR20240170533A KR1020247030589A KR20247030589A KR20240170533A KR 20240170533 A KR20240170533 A KR 20240170533A KR 1020247030589 A KR1020247030589 A KR 1020247030589A KR 20247030589 A KR20247030589 A KR 20247030589A KR 20240170533 A KR20240170533 A KR 20240170533A
Authority
KR
South Korea
Prior art keywords
group
resist
polymer
resist composition
diacrylate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247030589A
Other languages
English (en)
Korean (ko)
Inventor
마코토 후지무라
Original Assignee
니폰 제온 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니폰 제온 가부시키가이샤 filed Critical 니폰 제온 가부시키가이샤
Publication of KR20240170533A publication Critical patent/KR20240170533A/ko
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020247030589A 2022-03-31 2023-03-22 레지스트 조성물 및 레지스트 패턴 형성 방법 Pending KR20240170533A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022061239 2022-03-31
JPJP-P-2022-061239 2022-03-31
PCT/JP2023/011309 WO2023189969A1 (ja) 2022-03-31 2023-03-22 レジスト組成物及びレジストパターン形成方法

Publications (1)

Publication Number Publication Date
KR20240170533A true KR20240170533A (ko) 2024-12-03

Family

ID=88201953

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247030589A Pending KR20240170533A (ko) 2022-03-31 2023-03-22 레지스트 조성물 및 레지스트 패턴 형성 방법

Country Status (5)

Country Link
US (1) US20250155808A1 (https=)
JP (1) JPWO2023189969A1 (https=)
KR (1) KR20240170533A (https=)
TW (1) TW202344619A (https=)
WO (1) WO2023189969A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619044A (en) 1979-06-29 1981-02-23 Nec Corp Positive type resist
JPS5688134A (en) 1979-12-20 1981-07-17 Nec Corp Positive type resist
JP2000321791A (ja) 1999-05-11 2000-11-24 Nippon Telegr & Teleph Corp <Ntt> パターン形成方法およびポジ型レジスト組成物
JP2004279694A (ja) 2003-03-14 2004-10-07 Nippon Telegr & Teleph Corp <Ntt> レジスト組成物およびその硬化方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0519486A (ja) * 1991-07-16 1993-01-29 Nippon Zeon Co Ltd パターン形成材料およびパターン形成方法
JP2000221692A (ja) * 1998-11-26 2000-08-11 Mitsubishi Electric Corp フルカラ―感光記録媒体およびそれを用いた記録方法
WO2020137935A1 (ja) * 2018-12-27 2020-07-02 三菱瓦斯化学株式会社 化合物、（共）重合体、組成物、パターン形成方法、及び化合物の製造方法
CN120136703A (zh) * 2019-08-09 2025-06-13 三菱瓦斯化学株式会社 化合物、聚合物、组合物、膜形成用组合物、图案形成方法、绝缘膜的形成方法及化合物的制造方法
IL309807A (en) * 2021-07-14 2024-02-01 Fujifilm Corp Pattern forming method, electronic device manufacturing method, actinic ray-sensitive or radiation-sensitive resin composition, and resist film
IL310053A (en) * 2021-07-14 2024-03-01 Fujifilm Corp A method for creating a template and a method for manufacturing an electronic device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619044A (en) 1979-06-29 1981-02-23 Nec Corp Positive type resist
JPS5688134A (en) 1979-12-20 1981-07-17 Nec Corp Positive type resist
JP2000321791A (ja) 1999-05-11 2000-11-24 Nippon Telegr & Teleph Corp <Ntt> パターン形成方法およびポジ型レジスト組成物
JP2004279694A (ja) 2003-03-14 2004-10-07 Nippon Telegr & Teleph Corp <Ntt> レジスト組成物およびその硬化方法

Also Published As

Publication number Publication date
WO2023189969A1 (ja) 2023-10-05
JPWO2023189969A1 (https=) 2023-10-05
TW202344619A (zh) 2023-11-16
US20250155808A1 (en) 2025-05-15

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Date Code Title Description
PA0105 International application

Patent event date: 20240911

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application