KR20240148850A - 고체 촬상 장치 - Google Patents

고체 촬상 장치 Download PDF

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Publication number
KR20240148850A
KR20240148850A KR1020247028548A KR20247028548A KR20240148850A KR 20240148850 A KR20240148850 A KR 20240148850A KR 1020247028548 A KR1020247028548 A KR 1020247028548A KR 20247028548 A KR20247028548 A KR 20247028548A KR 20240148850 A KR20240148850 A KR 20240148850A
Authority
KR
South Korea
Prior art keywords
pixel
transistor
imaging device
state imaging
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247028548A
Other languages
English (en)
Korean (ko)
Inventor
요시아키 기타노
히데토시 오이시
나오히로 다카하시
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 세미컨덕터 솔루션즈 가부시키가이샤 filed Critical 소니 세미컨덕터 솔루션즈 가부시키가이샤
Publication of KR20240148850A publication Critical patent/KR20240148850A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H01L27/14612—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H01L27/14605—
    • H01L27/1463—
    • H01L27/1464—
    • H01L27/14641—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Solid State Image Pick-Up Elements (AREA)
KR1020247028548A 2022-02-14 2022-12-27 고체 촬상 장치 Pending KR20240148850A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2022-020875 2022-02-14
JP2022020875 2022-02-14
PCT/JP2022/048317 WO2023153108A1 (ja) 2022-02-14 2022-12-27 固体撮像装置

Publications (1)

Publication Number Publication Date
KR20240148850A true KR20240148850A (ko) 2024-10-11

Family

ID=87564172

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247028548A Pending KR20240148850A (ko) 2022-02-14 2022-12-27 고체 촬상 장치

Country Status (7)

Country Link
US (1) US20250151430A1 (https=)
EP (1) EP4481824A4 (https=)
JP (1) JPWO2023153108A1 (https=)
KR (1) KR20240148850A (https=)
CN (1) CN118715616A (https=)
TW (1) TW202335273A (https=)
WO (1) WO2023153108A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025134576A1 (ja) * 2023-12-20 2025-06-26 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び光検出装置の製造方法並びに電子機器
WO2025134543A1 (ja) * 2023-12-22 2025-06-26 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2025150445A1 (ja) * 2024-01-11 2025-07-17 ソニーセミコンダクタソリューションズ株式会社 光検出装置、電子機器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018148116A (ja) 2017-03-08 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4770246B2 (ja) * 2004-11-26 2011-09-14 ソニー株式会社 固体撮像素子
JP6003291B2 (ja) * 2011-08-22 2016-10-05 ソニー株式会社 固体撮像装置及び電子機器
CN104025579B (zh) * 2011-12-27 2016-05-04 富士胶片株式会社 固体摄像装置
KR102617389B1 (ko) * 2016-10-06 2023-12-26 에스케이하이닉스 주식회사 이미지 센서
TWI895980B (zh) * 2018-05-18 2025-09-01 日商索尼半導體解決方案公司 圖像感測器及電子機器
JP2020013817A (ja) * 2018-07-13 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
KR102560775B1 (ko) * 2018-12-20 2023-07-28 삼성전자주식회사 이미지 센서
DE112020003145T5 (de) * 2019-06-26 2022-03-17 Sony Semiconductor Solutions Corporation Festkörperbildgebungsvorrichtung
US12375833B2 (en) * 2020-06-09 2025-07-29 Sony Semiconductor Solutions Corporation Solid-state imaging device
JP7496118B2 (ja) 2020-07-21 2024-06-06 三笠産業株式会社 合成樹脂製キャップ
JP2021097241A (ja) * 2021-03-04 2021-06-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018148116A (ja) 2017-03-08 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器

Also Published As

Publication number Publication date
US20250151430A1 (en) 2025-05-08
CN118715616A (zh) 2024-09-27
EP4481824A4 (en) 2025-12-31
EP4481824A1 (en) 2024-12-25
WO2023153108A1 (ja) 2023-08-17
TW202335273A (zh) 2023-09-01
JPWO2023153108A1 (https=) 2023-08-17

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PA0105 International application

Patent event date: 20240826

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application