JPWO2023153108A1 - - Google Patents
Info
- Publication number
- JPWO2023153108A1 JPWO2023153108A1 JP2023580111A JP2023580111A JPWO2023153108A1 JP WO2023153108 A1 JPWO2023153108 A1 JP WO2023153108A1 JP 2023580111 A JP2023580111 A JP 2023580111A JP 2023580111 A JP2023580111 A JP 2023580111A JP WO2023153108 A1 JPWO2023153108 A1 JP WO2023153108A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
- H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8027—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022020875 | 2022-02-14 | ||
| PCT/JP2022/048317 WO2023153108A1 (ja) | 2022-02-14 | 2022-12-27 | 固体撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023153108A1 true JPWO2023153108A1 (https=) | 2023-08-17 |
| JPWO2023153108A5 JPWO2023153108A5 (https=) | 2025-12-04 |
Family
ID=87564172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023580111A Pending JPWO2023153108A1 (https=) | 2022-02-14 | 2022-12-27 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250151430A1 (https=) |
| EP (1) | EP4481824A4 (https=) |
| JP (1) | JPWO2023153108A1 (https=) |
| KR (1) | KR20240148850A (https=) |
| CN (1) | CN118715616A (https=) |
| TW (1) | TW202335273A (https=) |
| WO (1) | WO2023153108A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025134576A1 (ja) * | 2023-12-20 | 2025-06-26 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び光検出装置の製造方法並びに電子機器 |
| WO2025134543A1 (ja) * | 2023-12-22 | 2025-06-26 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
| WO2025150445A1 (ja) * | 2024-01-11 | 2025-07-17 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置、電子機器 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4770246B2 (ja) * | 2004-11-26 | 2011-09-14 | ソニー株式会社 | 固体撮像素子 |
| JP6003291B2 (ja) * | 2011-08-22 | 2016-10-05 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| CN104025579B (zh) * | 2011-12-27 | 2016-05-04 | 富士胶片株式会社 | 固体摄像装置 |
| KR102617389B1 (ko) * | 2016-10-06 | 2023-12-26 | 에스케이하이닉스 주식회사 | 이미지 센서 |
| JP6855287B2 (ja) | 2017-03-08 | 2021-04-07 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、および電子機器 |
| TWI895980B (zh) * | 2018-05-18 | 2025-09-01 | 日商索尼半導體解決方案公司 | 圖像感測器及電子機器 |
| JP2020013817A (ja) * | 2018-07-13 | 2020-01-23 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および電子機器 |
| KR102560775B1 (ko) * | 2018-12-20 | 2023-07-28 | 삼성전자주식회사 | 이미지 센서 |
| DE112020003145T5 (de) * | 2019-06-26 | 2022-03-17 | Sony Semiconductor Solutions Corporation | Festkörperbildgebungsvorrichtung |
| US12375833B2 (en) * | 2020-06-09 | 2025-07-29 | Sony Semiconductor Solutions Corporation | Solid-state imaging device |
| JP7496118B2 (ja) | 2020-07-21 | 2024-06-06 | 三笠産業株式会社 | 合成樹脂製キャップ |
| JP2021097241A (ja) * | 2021-03-04 | 2021-06-24 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および電子機器 |
-
2022
- 2022-12-27 EP EP22926122.7A patent/EP4481824A4/en active Pending
- 2022-12-27 CN CN202280091196.2A patent/CN118715616A/zh active Pending
- 2022-12-27 KR KR1020247028548A patent/KR20240148850A/ko active Pending
- 2022-12-27 WO PCT/JP2022/048317 patent/WO2023153108A1/ja not_active Ceased
- 2022-12-27 US US18/835,910 patent/US20250151430A1/en active Pending
- 2022-12-27 JP JP2023580111A patent/JPWO2023153108A1/ja active Pending
-
2023
- 2023-01-09 TW TW112100841A patent/TW202335273A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20250151430A1 (en) | 2025-05-08 |
| CN118715616A (zh) | 2024-09-27 |
| KR20240148850A (ko) | 2024-10-11 |
| EP4481824A4 (en) | 2025-12-31 |
| EP4481824A1 (en) | 2024-12-25 |
| WO2023153108A1 (ja) | 2023-08-17 |
| TW202335273A (zh) | 2023-09-01 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20251118 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20251118 |