KR20240101933A - 발광다이오드 소자 - Google Patents
발광다이오드 소자 Download PDFInfo
- Publication number
- KR20240101933A KR20240101933A KR1020247016456A KR20247016456A KR20240101933A KR 20240101933 A KR20240101933 A KR 20240101933A KR 1020247016456 A KR1020247016456 A KR 1020247016456A KR 20247016456 A KR20247016456 A KR 20247016456A KR 20240101933 A KR20240101933 A KR 20240101933A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- light
- light emitting
- photonic crystal
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004038 photonic crystal Substances 0.000 claims abstract description 77
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000002086 nanomaterial Substances 0.000 claims abstract description 10
- 238000009826 distribution Methods 0.000 claims description 37
- 239000011148 porous material Substances 0.000 claims description 14
- 125000006850 spacer group Chemical group 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 6
- 238000000295 emission spectrum Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 221
- 230000000052 comparative effect Effects 0.000 description 12
- 239000012792 core layer Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 10
- 239000010980 sapphire Substances 0.000 description 10
- 230000000737 periodic effect Effects 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- 238000005424 photoluminescence Methods 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000241 photoluminescence detection Methods 0.000 description 4
- 101100501282 Daucus carota EMB-1 gene Proteins 0.000 description 3
- 101100533509 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SIF2 gene Proteins 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H01L33/16—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
-
- H01L33/22—
-
- H01L33/44—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021189929A JP7738851B2 (ja) | 2021-11-24 | 2021-11-24 | 発光ダイオード素子 |
| JPJP-P-2021-189929 | 2021-11-24 | ||
| PCT/JP2022/040884 WO2023095573A1 (ja) | 2021-11-24 | 2022-11-01 | 発光ダイオード素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240101933A true KR20240101933A (ko) | 2024-07-02 |
Family
ID=86539405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247016456A Pending KR20240101933A (ko) | 2021-11-24 | 2022-11-01 | 발광다이오드 소자 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250031489A1 (https=) |
| EP (1) | EP4415061B1 (https=) |
| JP (1) | JP7738851B2 (https=) |
| KR (1) | KR20240101933A (https=) |
| CN (1) | CN118266092A (https=) |
| WO (1) | WO2023095573A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025018206A1 (ja) * | 2023-07-20 | 2025-01-23 | スタンレー電気株式会社 | 半導体発光素子及び半導体発光素子用基板 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015109477A (ja) | 2015-02-27 | 2015-06-11 | エルシード株式会社 | Ｌｅｄ素子 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007329468A (ja) * | 2006-05-10 | 2007-12-20 | Kumamoto Univ | 発光素子およびその製造方法 |
| JP5597933B2 (ja) * | 2009-05-01 | 2014-10-01 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体層貼り合わせ基板およびその製造方法 |
| ES2663320T3 (es) * | 2009-09-07 | 2018-04-12 | El-Seed Corporation | Elemento emisor de luz semiconductor |
| JP5435523B1 (ja) * | 2012-10-12 | 2014-03-05 | エルシード株式会社 | 半導体発光素子及びその製造方法 |
| JPWO2014115830A1 (ja) * | 2013-01-28 | 2017-01-26 | エルシード株式会社 | 半導体発光素子の製造方法 |
| JP5643920B1 (ja) * | 2013-04-16 | 2014-12-17 | エルシード株式会社 | Ｌｅｄ素子及びその製造方法 |
| JP5553292B1 (ja) * | 2013-12-03 | 2014-07-16 | エルシード株式会社 | Ｌｅｄ素子 |
| US10168450B2 (en) * | 2013-12-27 | 2019-01-01 | Sunasic Technologies, Inc. | Silicon wafer having colored top side |
| JP2015146302A (ja) * | 2014-02-04 | 2015-08-13 | 株式会社リコー | 直管形ｌｅｄランプ及び照明装置 |
| WO2017038961A1 (ja) * | 2015-09-03 | 2017-03-09 | 丸文株式会社 | 深紫外ｌｅｄ及びその製造方法 |
| CN108511572A (zh) * | 2017-02-23 | 2018-09-07 | 海迪科（南通）光电科技有限公司 | 一种具有光子晶体结构的发光二极管 |
| US11296262B2 (en) * | 2017-12-21 | 2022-04-05 | Lumileds Llc | Monolithic segmented LED array architecture with reduced area phosphor emission surface |
| JP2020107778A (ja) * | 2018-12-28 | 2020-07-09 | 丸文株式会社 | 深紫外ｌｅｄ装置及びその製造方法 |
-
2021
- 2021-11-24 JP JP2021189929A patent/JP7738851B2/ja active Active
-
2022
- 2022-11-01 EP EP22898358.1A patent/EP4415061B1/en active Active
- 2022-11-01 KR KR1020247016456A patent/KR20240101933A/ko active Pending
- 2022-11-01 US US18/711,620 patent/US20250031489A1/en active Pending
- 2022-11-01 CN CN202280076604.7A patent/CN118266092A/zh active Pending
- 2022-11-01 WO PCT/JP2022/040884 patent/WO2023095573A1/ja not_active Ceased
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015109477A (ja) | 2015-02-27 | 2015-06-11 | エルシード株式会社 | Ｌｅｄ素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4415061B1 (en) | 2026-05-06 |
| WO2023095573A1 (ja) | 2023-06-01 |
| CN118266092A (zh) | 2024-06-28 |
| JP2023076901A (ja) | 2023-06-05 |
| EP4415061A1 (en) | 2024-08-14 |
| EP4415061A4 (en) | 2025-03-12 |
| US20250031489A1 (en) | 2025-01-23 |
| JP7738851B2 (ja) | 2025-09-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20240517 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application |