JP7738851B2 - 発光ダイオード素子 - Google Patents

発光ダイオード素子

Info

Publication number
JP7738851B2
JP7738851B2 JP2021189929A JP2021189929A JP7738851B2 JP 7738851 B2 JP7738851 B2 JP 7738851B2 JP 2021189929 A JP2021189929 A JP 2021189929A JP 2021189929 A JP2021189929 A JP 2021189929A JP 7738851 B2 JP7738851 B2 JP 7738851B2
Authority
JP
Japan
Prior art keywords
layer
light
moth
photonic crystal
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021189929A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023076901A (ja
JP2023076901A5 (https=
Inventor
進 野田
宏之 柏木
俊哉 井出
哲星 岩崎
康之 川上
裕介 横林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Kyoto University NUC
Original Assignee
Stanley Electric Co Ltd
Kyoto University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2021189929A priority Critical patent/JP7738851B2/ja
Application filed by Stanley Electric Co Ltd, Kyoto University NUC filed Critical Stanley Electric Co Ltd
Priority to PCT/JP2022/040884 priority patent/WO2023095573A1/ja
Priority to KR1020247016456A priority patent/KR20240101933A/ko
Priority to EP22898358.1A priority patent/EP4415061B1/en
Priority to CN202280076604.7A priority patent/CN118266092A/zh
Priority to US18/711,620 priority patent/US20250031489A1/en
Publication of JP2023076901A publication Critical patent/JP2023076901A/ja
Publication of JP2023076901A5 publication Critical patent/JP2023076901A5/ja
Application granted granted Critical
Publication of JP7738851B2 publication Critical patent/JP7738851B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures

Landscapes

  • Led Devices (AREA)
JP2021189929A 2021-11-24 2021-11-24 発光ダイオード素子 Active JP7738851B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2021189929A JP7738851B2 (ja) 2021-11-24 2021-11-24 発光ダイオード素子
KR1020247016456A KR20240101933A (ko) 2021-11-24 2022-11-01 발광다이오드 소자
EP22898358.1A EP4415061B1 (en) 2021-11-24 2022-11-01 Light-emitting diode element
CN202280076604.7A CN118266092A (zh) 2021-11-24 2022-11-01 发光二极管元件
PCT/JP2022/040884 WO2023095573A1 (ja) 2021-11-24 2022-11-01 発光ダイオード素子
US18/711,620 US20250031489A1 (en) 2021-11-24 2022-11-01 Light-emitting diode element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021189929A JP7738851B2 (ja) 2021-11-24 2021-11-24 発光ダイオード素子

Publications (3)

Publication Number Publication Date
JP2023076901A JP2023076901A (ja) 2023-06-05
JP2023076901A5 JP2023076901A5 (https=) 2024-10-23
JP7738851B2 true JP7738851B2 (ja) 2025-09-16

Family

ID=86539405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021189929A Active JP7738851B2 (ja) 2021-11-24 2021-11-24 発光ダイオード素子

Country Status (6)

Country Link
US (1) US20250031489A1 (https=)
EP (1) EP4415061B1 (https=)
JP (1) JP7738851B2 (https=)
KR (1) KR20240101933A (https=)
CN (1) CN118266092A (https=)
WO (1) WO2023095573A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025018206A1 (ja) * 2023-07-20 2025-01-23 スタンレー電気株式会社 半導体発光素子及び半導体発光素子用基板

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007329468A (ja) 2006-05-10 2007-12-20 Kumamoto Univ 発光素子およびその製造方法
JP5435523B1 (ja) 2012-10-12 2014-03-05 エルシード株式会社 半導体発光素子及びその製造方法
JP5553292B1 (ja) 2013-12-03 2014-07-16 エルシード株式会社 Ｌｅｄ素子
WO2014115830A1 (ja) 2013-01-28 2014-07-31 エルシード株式会社 半導体発光素子の製造方法
JP5597933B2 (ja) 2009-05-01 2014-10-01 住友電気工業株式会社 Ｉｉｉ族窒化物半導体層貼り合わせ基板およびその製造方法
CN104752573A (zh) 2013-12-27 2015-07-01 旭景科技股份有限公司 具有彩色顶侧的硅晶圆
JP2015146302A (ja) 2014-02-04 2015-08-13 株式会社リコー 直管形ｌｅｄランプ及び照明装置
US20160149076A1 (en) 2013-04-16 2016-05-26 El-Seed Corporation Led element and method of manufacturing the same
WO2017038961A1 (ja) 2015-09-03 2017-03-09 丸文株式会社 深紫外ｌｅｄ及びその製造方法
CN108511572A (zh) 2017-02-23 2018-09-07 海迪科（南通）光电科技有限公司 一种具有光子晶体结构的发光二极管
JP2018198340A (ja) 2009-09-07 2018-12-13 エルシード株式会社 半導体発光素子
JP2020107778A (ja) 2018-12-28 2020-07-09 丸文株式会社 深紫外ｌｅｄ装置及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015109477A (ja) 2015-02-27 2015-06-11 エルシード株式会社 Ｌｅｄ素子
US11296262B2 (en) * 2017-12-21 2022-04-05 Lumileds Llc Monolithic segmented LED array architecture with reduced area phosphor emission surface

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007329468A (ja) 2006-05-10 2007-12-20 Kumamoto Univ 発光素子およびその製造方法
JP5597933B2 (ja) 2009-05-01 2014-10-01 住友電気工業株式会社 Ｉｉｉ族窒化物半導体層貼り合わせ基板およびその製造方法
JP2018198340A (ja) 2009-09-07 2018-12-13 エルシード株式会社 半導体発光素子
JP5435523B1 (ja) 2012-10-12 2014-03-05 エルシード株式会社 半導体発光素子及びその製造方法
WO2014115830A1 (ja) 2013-01-28 2014-07-31 エルシード株式会社 半導体発光素子の製造方法
US20160149076A1 (en) 2013-04-16 2016-05-26 El-Seed Corporation Led element and method of manufacturing the same
JP5553292B1 (ja) 2013-12-03 2014-07-16 エルシード株式会社 Ｌｅｄ素子
CN104752573A (zh) 2013-12-27 2015-07-01 旭景科技股份有限公司 具有彩色顶侧的硅晶圆
JP2015146302A (ja) 2014-02-04 2015-08-13 株式会社リコー 直管形ｌｅｄランプ及び照明装置
WO2017038961A1 (ja) 2015-09-03 2017-03-09 丸文株式会社 深紫外ｌｅｄ及びその製造方法
CN108511572A (zh) 2017-02-23 2018-09-07 海迪科（南通）光电科技有限公司 一种具有光子晶体结构的发光二极管
JP2020107778A (ja) 2018-12-28 2020-07-09 丸文株式会社 深紫外ｌｅｄ装置及びその製造方法

Also Published As

Publication number Publication date
EP4415061B1 (en) 2026-05-06
WO2023095573A1 (ja) 2023-06-01
CN118266092A (zh) 2024-06-28
JP2023076901A (ja) 2023-06-05
EP4415061A1 (en) 2024-08-14
EP4415061A4 (en) 2025-03-12
KR20240101933A (ko) 2024-07-02
US20250031489A1 (en) 2025-01-23

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