KR20240025717A - 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 - Google Patents

반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR20240025717A
KR20240025717A KR1020247005441A KR20247005441A KR20240025717A KR 20240025717 A KR20240025717 A KR 20240025717A KR 1020247005441 A KR1020247005441 A KR 1020247005441A KR 20247005441 A KR20247005441 A KR 20247005441A KR 20240025717 A KR20240025717 A KR 20240025717A
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KR
South Korea
Prior art keywords
film
phase shift
alloy
reflective mask
shift film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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KR1020247005441A
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English (en)
Korean (ko)
Inventor
요헤이 이케베
츠토무 쇼키
타카히로 오노우에
히로후미 코자카이
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from JP2017107394A external-priority patent/JP6861095B2/ja
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20240025717A publication Critical patent/KR20240025717A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020247005441A 2017-03-03 2018-02-20 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Pending KR20240025717A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2017040043 2017-03-03
JPJP-P-2017-040043 2017-03-03
JP2017107394A JP6861095B2 (ja) 2017-03-03 2017-05-31 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JPJP-P-2017-107394 2017-05-31
PCT/JP2018/006054 WO2018159392A1 (ja) 2017-03-03 2018-02-20 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
KR1020197028297A KR102639087B1 (ko) 2017-03-03 2018-02-20 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020197028297A Division KR102639087B1 (ko) 2017-03-03 2018-02-20 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Publications (1)

Publication Number Publication Date
KR20240025717A true KR20240025717A (ko) 2024-02-27

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247005441A Pending KR20240025717A (ko) 2017-03-03 2018-02-20 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (2) US11880130B2 (https=)
JP (1) JP7588176B2 (https=)
KR (1) KR20240025717A (https=)
TW (2) TWI881609B (https=)
WO (1) WO2018159392A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102946015B1 (ko) 2019-10-29 2026-03-31 에이지씨 가부시키가이샤 반사형 마스크 블랭크 및 반사형 마스크
JP6929983B1 (ja) * 2020-03-10 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法
TW202202641A (zh) * 2020-07-13 2022-01-16 美商應用材料股份有限公司 極紫外線遮罩吸收劑材料

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JPS5233321B1 (https=) 1971-07-10 1977-08-27
JP2006228766A (ja) 2005-02-15 2006-08-31 Toppan Printing Co Ltd 極端紫外線露光用マスク、マスクブランク、及び露光方法
JP5266988B2 (ja) 2008-09-10 2013-08-21 凸版印刷株式会社 ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクブランク、ハーフトーン型ｅｕｖマスクの製造方法及びパターン転写方法

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JP3078163B2 (ja) * 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
JP4458216B2 (ja) 2000-09-01 2010-04-28 信越化学工業株式会社 フォトマスク用ブランクス及びフォトマスクの製造方法
US7282307B2 (en) * 2004-06-18 2007-10-16 Freescale Semiconductor, Inc. Reflective mask useful for transferring a pattern using extreme ultra violet (EUV) radiation and method of making the same
JP5233321B2 (ja) 2008-02-27 2013-07-10 凸版印刷株式会社 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法
KR20120034074A (ko) * 2009-07-08 2012-04-09 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크
JP5556452B2 (ja) 2010-07-06 2014-07-23 信越化学工業株式会社 パターン形成方法
JP5708651B2 (ja) 2010-08-24 2015-04-30 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
WO2013146990A1 (ja) * 2012-03-28 2013-10-03 Hoya株式会社 マスクブランク用基板、多層反射膜付き基板、透過型マスクブランク、反射型マスクブランク、透過型マスク、反射型マスク及び半導体装置の製造方法
KR102056509B1 (ko) 2012-07-13 2019-12-16 호야 가부시키가이샤 마스크 블랭크 및 위상 시프트 마스크의 제조 방법
KR101875790B1 (ko) 2013-09-18 2018-07-06 호야 가부시키가이샤 반사형 마스크 블랭크 및 그 제조방법, 반사형 마스크 그리고 반도체 장치의 제조방법
JP6301127B2 (ja) 2013-12-25 2018-03-28 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
JP6381921B2 (ja) 2014-01-30 2018-08-29 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
JP6499440B2 (ja) 2014-12-24 2019-04-10 Hoya株式会社 反射型マスクブランク及び反射型マスク
JP6739960B2 (ja) 2016-03-28 2020-08-12 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP6861095B2 (ja) 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233321B1 (https=) 1971-07-10 1977-08-27
JP2006228766A (ja) 2005-02-15 2006-08-31 Toppan Printing Co Ltd 極端紫外線露光用マスク、マスクブランク、及び露光方法
JP5266988B2 (ja) 2008-09-10 2013-08-21 凸版印刷株式会社 ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクブランク、ハーフトーン型ｅｕｖマスクの製造方法及びパターン転写方法

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Publication number Publication date
TWI881609B (zh) 2025-04-21
US11880130B2 (en) 2024-01-23
JP2023080223A (ja) 2023-06-08
WO2018159392A1 (ja) 2018-09-07
TW202309648A (zh) 2023-03-01
US12135496B2 (en) 2024-11-05
US20240103354A1 (en) 2024-03-28
TW202417977A (zh) 2024-05-01
JP7588176B2 (ja) 2024-11-21
TWI828372B (zh) 2024-01-01
US20230244135A1 (en) 2023-08-03

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