KR20230161410A - Work handling sheets and device manufacturing methods - Google Patents

Abstract

A work handling sheet (1) comprising a base material (12) and an interfacial ablation layer (11) laminated on one side of the base material (12), capable of holding small work pieces and performing interfacial ablation by irradiation of laser light. ), the work handling sheet 1 in which the interfacial ablation layer 11 contains an active energy ray curable component, a photopolymerization initiator, and an ultraviolet absorber. This work handling sheet can handle even small, fine work pieces satisfactorily.

Description

Work handling sheets and device manufacturing methods

The present invention relates to a work handling sheet that can be used to handle small workpieces such as semiconductor components and semiconductor devices, and a device manufacturing method using the work handling sheet, particularly to micro light emitting diodes, power devices, and MEMS (MEMS). It relates to a work handling sheet that can be used to handle small work pieces such as Micro Electro Mechanical Systems) and a device manufacturing method using the work handling sheet.

In recent years, the development of displays using micro light emitting diodes is in progress. In the display, each pixel is composed of micro light-emitting diodes, and the light emission of each micro light-emitting diode is independently controlled. In manufacturing the display, it is generally necessary to mount micro light emitting diodes arranged on a supply substrate such as sapphire or glass on a wiring board provided with wiring.

During the above mounting, it is necessary to accurately place the plurality of micro light emitting diodes arranged on the supply board at a predetermined position on the wiring board. At this time, it is necessary to selectively mount a predetermined number of the plurality of micro light emitting diodes on the wiring board, or it is necessary to mount the plurality of micro light emitting diodes simultaneously.

From the viewpoint of performing such mounting satisfactorily, the use of laser light irradiation is being considered. For example, after holding a plurality of micro light emitting diodes on a support with a predetermined layer interposed therebetween, laser light is irradiated to the layer to cause ablation of the layer at the irradiated position, thereby causing the layer to be separated from the support. A method of placing (laser lift-off) micro light emitting diodes on a wiring board is being studied (Patent Document 1). Since the laser light has excellent directivity and convergence, it is easy to control the irradiation position, and selective placement can be performed satisfactorily.

Japanese Patent No. 6546278

However, further miniaturization of micro light-emitting diodes and higher-density packaging of micro light-emitting diodes are also progressing, and in response to these, fine work pieces such as a large number of micro light-emitting diodes are more efficient than conventional methods such as Patent Document 1. A means to deal with is required.

In addition, as a method of holding micro light emitting diodes on a support through a predetermined layer as disclosed in Patent Document 1, a plurality of micro light emitting diodes are fabricated on a sheet or the like, and then they are transferred onto the support ( What is done is done. Conventionally, during this transfer, there are cases where a problem arises in that the micro light emitting diode does not move well to the support and remains in the original sheet. From the viewpoint of avoiding this, it is also conceivable to employ an adhesive layer exhibiting a relatively high adhesive force as the above-mentioned predetermined layer. However, in this case, the adhesive layer and the micro light-emitting diode adhere excessively, and the amount of laser light required to separate the micro light-emitting diode by laser lift-off becomes large. From this point of view as well, there is a need for good handling means for fine work pieces such as micro light emitting diodes.

The present invention has been made in view of these actual conditions, and its purpose is to provide a work handling sheet that can favorably handle even fine small work pieces, and a device manufacturing method using the work handling sheet.

In order to achieve the above object, firstly, the present invention provides an interfacial ablation method in which a substrate is laminated on one side of the substrate, capable of holding small work pieces, and performing interface ablation by irradiation of laser light. A work handling sheet including layers, wherein the interfacial ablation layer contains an active energy ray curable component, a photopolymerization initiator, and an ultraviolet ray absorber (invention 1).

In the work handling sheet according to the above invention (invention 1), the interface ablation layer contains an ultraviolet absorber, so that when irradiated with laser light, the work handling sheet effectively ablates the interface, thereby well separating work pieces toward the object. You can. Additionally, because the interfacial ablation layer contains an active energy ray curable component and a photopolymerization initiator, the adhesion to the workpiece can be reduced even by irradiation of active energy rays. Therefore, it becomes possible to set the adhesion before irradiation of active energy rays relatively high, making it easy to transfer small work pieces from other sheets, etc. to the work handling sheet. Additionally, as the adhesion to the small workpiece decreases due to irradiation of active energy rays, it becomes possible to reduce the amount of laser light irradiation required for laser lift-off.

In the above-mentioned invention (invention 1), the active energy ray-curable component is preferably an active energy ray-curable adhesive (invention 2).

In the above invention (invention 2), the active energy ray-curable adhesive is preferably an acrylic adhesive (invention 3).

In the above inventions (inventions 2 and 3), the adhesive force of the silicon wafer to the mirror surface is preferably 300 mN/25 mm or more and 30,000 mN/25 mm or less (invention 4).

In the above inventions (inventions 2 to 4), the surface of the interface ablation layer opposite to the substrate is attached to a mirror surface of a silicon wafer, and ultraviolet rays are applied to the interface ablation layer using a high-pressure mercury lamp. The adhesive force of the silicon wafer to the mirror surface after curing the interface ablation layer by irradiation is preferably 10 mN/25 mm or more and 300 mN/25 mm or less (Invention 5).

In the above inventions (inventions 1 to 5), the photopolymerization initiator preferably has an absorption peak in a wavelength range of 250 nm to 500 nm (invention 6).

In the above inventions (inventions 1 to 6), the ultraviolet absorber is preferably an organic compound (invention 7).

In the above inventions (inventions 1 to 7), the ultraviolet absorber is preferably a compound having one or more heterocycles (invention 8).

In the above inventions (inventions 1 to 8), the ultraviolet absorber has at least one type of carbocycle and heterocycle, and all of the carbocycles and heterocycles that the ultraviolet absorber has are each monocyclic. It is desirable (invention 9).

In the above inventions (inventions 1 to 9), the ultraviolet absorber is preferably a compound having a plurality of aromatic rings (invention 10).

In the above inventions (inventions 1 to 10), the content of the ultraviolet absorber in the interfacial ablation layer is preferably 1% by mass or more and 75% by mass or less (invention 11).

In the above inventions (inventions 1 to 11), it is preferable that the laser light has a wavelength in the ultraviolet range (invention 12).

In the above inventions (inventions 1 to 12), when interfacial ablation occurs in the interfacial ablation layer, it is preferable that a blister is formed at the position where the interfacial ablation occurs (invention 13).

In the above inventions (inventions 1 to 13), the interface ablation layer is cured entirely or locally by irradiation of active energy rays, and the interface ablation layer is locally ablated by irradiation of the laser light. It is preferably used to selectively separate any of the plurality of work pieces held on the surface opposite to the substrate in the interface ablation layer from the interface ablation layer by generating a ration. Do (Invention 14).

In the above invention (invention 14), the work piece is preferably at least one type selected from semiconductor components and semiconductor devices (invention 15).

In the above inventions (inventions 14 and 15), the work piece is preferably a light emitting diode selected from mini light emitting diodes and micro light emitting diodes (invention 16).

Second, the present invention provides a work handling sheet comprising a substrate and an interfacial ablation layer containing an active energy ray curable component, a photopolymerization initiator, and an ultraviolet absorber, laminated on one side of the substrate, and the interface ablation layer is laminated on one side of the substrate. A preparation step of preparing a laminate in which a plurality of small work pieces are held on the surface of the layer side, and stacking the laminate so that the faces of the small work pieces in the laminate face each other with respect to an object capable of holding the work pieces. A placement step of arranging a sieve, and at a position where at least one work piece is attached to the entire interface ablation layer in the laminate, or to the interface ablation layer in the laminate. In contrast, a curing step of curing the interfacial ablation layer overall or locally by irradiating an active energy ray, and a position in the interfacial ablation layer of the laminate where at least one work piece is attached. In contrast, by irradiating laser light to generate interfacial ablation at the irradiated position in the interfacial ablation layer, the work piece existing at the position where the interfacial ablation occurred is separated from the work handling sheet, A device manufacturing method is provided, comprising a separation step of placing the work piece on the object (invention 17).

In the above invention (invention 17), it is preferable to perform the separation process after completion of the curing process (invention 18).

In the invention (invention 17), the irradiation of the laser light in the separation step is also performed as the irradiation of the active energy ray in the curing step, and local curing of the interface ablation layer and the interface ablation are performed. It is also desirable to do it simultaneously (Invention 19).

In the above inventions (inventions 17 to 19), the work piece is preferably at least one type selected from semiconductor components and semiconductor devices (invention 20).

In the above inventions (inventions 17 to 20), it is preferable to use light emitting diodes selected from mini light emitting diodes and micro light emitting diodes as the work pieces to manufacture a light emitting device having a plurality of the light emitting diodes (invention 21). .

In the above invention (invention 21), the light emitting device is preferably a display (invention 22).

The work handling sheet according to the present invention can favorably handle even small pieces of fine work, and according to the device manufacturing method according to the present invention, devices with excellent performance can be manufactured.

1 is a cross-sectional view of a work handling sheet according to one embodiment of the present invention.
Figure 2 is a cross-sectional view illustrating a device manufacturing method using a work handling sheet according to an embodiment of the present invention.
Figure 3 is a cross-sectional view explaining the state of blisters and reaction areas generated by irradiation of laser light.

Hereinafter, embodiments of the present invention will be described.

1 shows a cross-sectional view of a work handling sheet according to one embodiment. The work handling sheet 1 shown in FIG. 1 includes a base material 12 and an interface ablation layer 11 laminated on one side of the base material 12.

In the work handling sheet 1 according to this embodiment, the interface ablation layer 11 is capable of holding small work pieces. That is, the work handling sheet 1 according to the present embodiment can maintain the work pieces laminated on the surface of the interface ablation layer 11 opposite to the substrate 12 in that state.

Although the specific mode of the above holding is not limited, a preferred example is holding the interfacial ablation layer 11 by exerting adhesion to the work piece. In this case, as will be described later, the interfacial ablation layer 11 preferably contains an adhesive as one of its constituent components, that is, is an adhesive layer.

Additionally, the interface ablation layer 11 in this embodiment is subjected to interface ablation by irradiation of laser light. That is, the interface ablation layer 11 performs local interface ablation in the area irradiated with the laser light. Moreover, the laser light is not particularly limited as long as it is capable of generating interface ablation, and may be any laser light having a wavelength in the ultraviolet range, visible light range, and infrared range. Among these, laser light having a wavelength in the ultraviolet range may be used. This is desirable.

In this specification, interfacial ablation refers to evaporation or volatilization of a portion of the components constituting the interface ablation layer 11 by the energy of the laser light, and the resulting gas is generated between the interface ablation layer 11 and the substrate 12. ) refers to the formation of voids (blisters) at the interface. In this case, the shape of the interface ablation layer 11 changes due to blisters, and the small work pieces peel off from the interface ablation layer 11, causing the small work pieces to separate.

And the interface ablation layer 11 in this embodiment contains an active energy ray curable component and a photopolymerization initiator, and also contains an ultraviolet absorber.

First, the presence of an ultraviolet absorber in the interface ablation layer 11 in this embodiment improves the efficiency of the interface ablation layer 11 receiving energy from the laser light. As a result, interfacial ablation occurs effectively, and it becomes possible to properly separate the retained work pieces from the interfacial ablation layer 11. In particular, the amount of laser light irradiation required to produce sufficient separation of work pieces is reduced, thereby reducing the operating cost of the laser light irradiation device, and making it easier to separate only the targeted work pieces well, improving precision. , Furthermore, damage to the device and work pieces due to excessive laser light irradiation can be prevented.

In addition, since the interface ablation layer 11 in the present embodiment contains an active energy ray curable component and a photopolymerization initiator, the adhesion between the work handling sheet according to the present embodiment and the work piece is reduced by irradiation of the active energy ray. You can do it. Therefore, by lowering the adhesion by irradiation of active energy rays before generating the above-described interface ablation or simultaneously with the above-described interface ablation, separation of work pieces from the work handling sheet according to the present embodiment is ensured. It becomes possible to do it. Additionally, it becomes possible to further reduce the amount of laser light required to cause sufficient separation of work pieces. In addition, in the work handling sheet according to the present embodiment, since the adhesion to the small work piece decreases due to irradiation of active energy rays, it is also possible to set the adhesion before irradiation of active energy rays to be high. Accordingly, when transferring small work pieces from another sheet, etc. to the work handling sheet according to the present embodiment, it is possible to prevent the small work pieces from remaining on the other sheet, etc., thereby enabling good transfer.

1. Interfacial ablation layer

The specific structure and composition of the interfacial ablation layer 11 in this embodiment has the property of being able to maintain a small work piece and ablating the interface by irradiation of laser light, and also containing an active energy ray curable component and a photopolymerization initiator. There is no particular limitation as long as it contains an ultraviolet absorber.

(1) UV absorber

The type of ultraviolet absorber in this embodiment is not particularly limited. The ultraviolet absorber in this embodiment may be an organic compound or an inorganic compound, but it is preferable that it is an organic compound from the viewpoint of being easy to generate good interfacial ablation.

When the ultraviolet absorber is an organic compound, preferred examples of the ultraviolet absorber include hydroxyphenyltriazine-based ultraviolet absorbers, benzophenone-based ultraviolet absorbers, benzotriazole-based ultraviolet absorbers, benzoate-based ultraviolet absorbers, benzoxazinone-based ultraviolet absorbers, and phenyl salicylate. Compounds such as silate-based ultraviolet absorbers, cyanoacrylate-based ultraviolet absorbers, nickel complex ultraviolet absorbers, hydroquinone-based ultraviolet absorbers, salicylic acid-based ultraviolet absorbers, malonic acid ester-based ultraviolet absorbers, and oxalic acid-based ultraviolet absorbers are included. These may be used individually or in combination of two or more types.

Among the above-mentioned ultraviolet absorbers, hydroxyphenyltriazine-based ultraviolet absorbers, benzophenone-based ultraviolet absorbers, and It is preferable to use at least one type of benzotriazole-based ultraviolet absorber, and it is especially preferable to use a hydroxyphenyltriazine-based ultraviolet absorber.

As the hydroxyphenyltriazine-based ultraviolet absorber, 2-[4-(octyl-2-methylethanoate)oxy-2-hydroxyphenyl]-4,6-[bis(2,4-dimethylphenyl)]- 1,3,5-triazine, 2-[4-(2-hydroxy-3-dodecyloxy-propyl)oxy-2-hydroxyphenyl]-4,6-[bis(2,4-dimethylphenyl) )-1,3,5-triazine, 2-[4-(2-hydroxy-3-tridecyloxy-propyl)oxy-2-hydroxyphenyl]-4,6-[bis(2,4 -Dimethylphenyl)-1,3,5-triazine, 2-(2,4-dihydroxyphenyl)-4,6-bis-(2,4-dimethylphenyl)-1,3,5-triazine , 2-[4-(2-hydroxy-3-(2'-ethyl)hexyloxy]-2-hydroxyphenyl]-4,6-[bis(2,4-dimethylphenyl)-1,3 ,5-triazine, 2,4-bis[2-hydroxy-4-butoxyphenyl]-6-(2,4-dibutoxyphenyl)-1,3,5-triazine, 2-(2- Hydroxy-4-[1-octyloxycarbonylethoxy]phenyl)-4,6-bis(4-phenylphenyl)-1,3,5-triazine, tris[2,4,6-[2- {4-(octyl-2-methylethanoate)oxy-2-hydroxyphenyl}]-1,3,5-triazine, etc. These may be used individually or in combination of two types. You may use a combination of the above.

Among these, tris[2,4,6-[2-{4-(octyl-2-methylethanoate)oxy-2-hydroxyphenyl}]-1,3,5-triazine, 2-(2 -Hydroxy-4-[1-octyloxycarbonylethoxy]phenyl)-4,6-bis(4-phenylphenyl)-1,3,5-triazine 2-[4-(2-hydroxy- 3-dodecyloxy-propyl)oxy-2-hydroxyphenyl]-4,6-[bis(2,4-dimethylphenyl)-1,3,5-triazine and 2-[4-(2-hyde Using at least one of oxy-3-tridecyloxy-propyl)oxy-2-hydroxyphenyl]-4,6-[bis(2,4-dimethylphenyl)-1,3,5-triazine It is desirable.

In addition, when the ultraviolet absorber is an organic compound, the ultraviolet absorber is preferably a compound having one or more heterocycles as a characteristic of its chemical structure. In this case, it is preferable that the number of heterocycles is 4 or less, and it is especially preferable that it is 1.

In addition, as another feature of the chemical structure, the ultraviolet absorber in the present embodiment preferably has at least one type of carbocycle and heterocycle, and all carbocycles and heterocycles of the ultraviolet absorber are each monocyclic. .

As an additional feature of the chemical structure, it is preferable that the ultraviolet absorber in this embodiment is a compound having a plurality of aromatic rings. In this case, it is preferable that the number of aromatic rings is two or more. Moreover, it is preferable that the number of aromatic rings is 6 or less, and it is especially preferable that it is 3 or less.

In terms of the above-mentioned chemical structural characteristics, each heterocycle preferably has at least one element selected from nitrogen, oxygen, phosphorus, sulfur, silicon, and selenium as an element other than carbon constituting them, especially nitrogen. , it is preferable to have at least one selected from oxygen, phosphorus, and sulfur. Additionally, the number of atoms constituting the heterocyclic ring structure is not particularly limited, and for example, it is preferably 3 to 9, and especially preferably 5 to 6. Specific examples of preferable heterocycles include triazine, benzotriazole, thiophene, pyrrole, imidazole, pyridine, and pyrazine.

In addition, in terms of the above-mentioned chemical structural characteristics, preferred examples of aromatic rings include benzene, naphthalene, anthracene, biphenyl, triphenyl, and the like.

Examples of ultraviolet absorbers having the above-mentioned chemical structural characteristics include ultraviolet absorbers having the structure of the following formula (1) (tris[2,4,6-[2-{4-(octyl-2-methylethanoate) Oxy-2-hydroxyphenyl}]-1,3,5-triazine) can be mentioned.

[Tuesday 1]

The ultraviolet absorber in this embodiment preferably has an absorption peak in a wavelength range of 250 nm or more and 400 nm or less. Thereby, it becomes easy to generate good interface ablation. In addition, the absorption peak of the ultraviolet absorber can be specified based on the description of the test example described later, and in particular, it can be specified from the absorbance of each wavelength of the ultraviolet absorber measured according to the description of the test example described later.

The ultraviolet absorber in this embodiment preferably has an absorbance of light with a wavelength of 355 nm of 0.5 or more, especially preferably 1.0 or more, and more preferably 1.2 or more. Thereby, it becomes easy to generate good interface ablation. Additionally, the upper limit of the absorbance is not particularly limited, and may be, for example, 4.0 or less. Details of the method for measuring the absorbance are as described in the test examples described later.

The content of the ultraviolet absorber in the interface ablation layer 11 in the present embodiment is preferably 1% by mass or more, more preferably 2% by mass or more, especially preferably 3% by mass or more, and even more preferably 5% by mass. It is preferable that it is % or more. When the content of the ultraviolet absorber is 1% by mass or more, the interfacial ablation layer 11 absorbs the laser light efficiently, thereby making it easy to perform good interfacial ablation. In addition, the content of the ultraviolet absorber in the interface ablation layer 11 in the present embodiment is preferably 75% by mass or less, more preferably 60% by mass or less, and especially preferably 50% by mass or less. It is preferable that it is 20 mass % or less. When the ultraviolet absorber content is 75% by mass or less, the viscosity of the material for forming the interface ablation layer 11 becomes appropriate, and it becomes easy to ensure good film forming properties.

Additionally, when the interface ablation layer 11 in this embodiment is formed from the adhesive composition described later, an ultraviolet absorber may be blended in this adhesive composition. In that case, the blending amount of the ultraviolet absorber in the adhesive composition is preferably 1% by mass or more, more preferably 2% by mass or more, especially preferably 3% by mass or more, and more preferably 5% by mass or more. When the blending amount of the ultraviolet absorber is 1% by mass or more, the interfacial ablation layer 11 absorbs the laser light efficiently, thereby making it easy to perform interfacial ablation favorably. In addition, the amount of ultraviolet absorber in the adhesive composition is preferably 75% by mass or less, more preferably 60% by mass or less, especially 50% by mass or less, and more preferably 20% by mass or less. When the blending amount of the ultraviolet absorber is 75% by mass or less, the resulting adhesive easily exhibits the desired adhesive strength.

(2) Active energy ray curable ingredients

The active energy ray-curable component in the present embodiment is not particularly limited as long as it is possible to cure the interfacial ablation layer 11 by irradiation of active energy rays. Examples of active energy ray-curable components include active energy ray-curable adhesives and resins other than adhesives that have active energy ray-curable properties. However, from the viewpoint of being easy to exhibit the property of being able to maintain small work pieces, active energy ray-curable adhesives are used. It is desirable to be When the active energy ray curable component is an active energy ray curable adhesive, the interfacial ablation layer 11 is preferably made of an adhesive composition containing the active energy ray curable component, a photopolymerization initiator, and an ultraviolet absorber.

The above-described active energy ray-curable adhesive may be any of acrylic adhesives, rubber adhesives, silicone adhesives, urethane adhesives, polyester adhesives, and polyvinyl ether adhesives. However, from the viewpoint of being easy to achieve the desired adhesive strength, acrylic adhesives are preferred. It is desirable to be

In addition, the active energy ray curable adhesive may be composed of a polymer having active energy ray curable properties as a main component, and may contain an active energy ray non-curable polymer (polymer without active energy ray curable property) and at least one active energy ray curable group. The main component may be a mixture of monomers and/or oligomers. Additionally, it may be a mixture of a polymer having active energy ray curability and a polymer that is not curable by active energy ray, or it may be a mixture of a polymer having active energy ray curing property and a monomer and/or oligomer having at least one active energy ray curable group. , it may be a mixture of these three types.

First, the case where the active energy ray-curable adhesive contains a polymer having active energy ray curability as the main component will be described below.

The polymer having active energy ray curing property is a (meth)acrylic acid ester (co)polymer (A) (hereinafter referred to as “active energy ray curing polymer (A)) into which a functional group (active energy ray curing group) having energy ray curing property is introduced into the side chain. 」) is preferable. This active energy ray-curable polymer (A) is preferably obtained by reacting an acrylic copolymer (a1) having a functional group-containing monomer unit with an unsaturated group-containing compound (a2) having a functional group bonded to the functional group. In addition, in this specification, (meth)acrylic acid ester means both acrylic acid ester and methacrylic acid ester. The same goes for other similar terms.

The acrylic copolymer (a1) preferably contains a structural unit derived from a functional group-containing monomer and a structural unit derived from a (meth)acrylic acid ester monomer or a derivative thereof.

The functional group-containing monomer as a structural unit of the acrylic copolymer (a1) is preferably a monomer having a polymerizable double bond and a functional group such as a hydroxy group, a carboxyl group, an amino group, a substituted amino group, and an epoxy group in the molecule.

Examples of hydroxy group-containing monomers include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, and 2-hydroxybutyl (meth)acrylate. Acrylate, 3-hydroxybutyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, etc. are mentioned, and these are used individually or in combination of two or more types.

Examples of the carboxyl group-containing monomer include ethylenically unsaturated carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, and citraconic acid. These may be used individually, or two or more types may be used in combination.

Examples of amino group-containing monomers or substituted amino group-containing monomers include aminoethyl (meth)acrylate, n-butylaminoethyl (meth)acrylate, and the like. These may be used individually, or two or more types may be used in combination.

Examples of the (meth)acrylic acid ester monomer constituting the acrylic copolymer (a1) include alkyl (meth)acrylates with an alkyl group having 1 to 20 carbon atoms, and, for example, monomers having an alicyclic structure in the molecule (containing an alicyclic structure) monomer) is preferably used.

As alkyl (meth)acrylate, especially alkyl (meth)acrylate whose alkyl group has 1 to 18 carbon atoms, for example, methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, n -Butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, etc. are preferably used. These may be used individually or in combination of two or more types.

Examples of monomers containing an alicyclic structure include cyclohexyl (meth)acrylate, dicyclopentanyl (meth)acrylate, adamantyl (meth)acrylate, isobornyl (meth)acrylate, and dicyclopentenyl (meth)acrylate. , dicyclopentenyloxyethyl (meth)acrylate, etc. are preferably used. These may be used individually or in combination of two or more types.

The acrylic copolymer (a1) contains structural units derived from the functional group-containing monomer in a proportion of preferably 1% by mass or more, particularly preferably 5% by mass or more, and more preferably 10% by mass or more. In addition, the acrylic copolymer (a1) contains structural units derived from the functional group-containing monomer in a proportion of preferably 35% by mass or less, particularly preferably 30% by mass or less, and more preferably 25% by mass or less. do.

In addition, the acrylic copolymer (a1) contains structural units derived from (meth)acrylic acid ester monomer or a derivative thereof, preferably 50% by mass or more, particularly preferably 60% by mass or more, more preferably 70% by mass. Contains in the above ratio. In addition, the acrylic copolymer (a1) contains structural units derived from (meth)acrylic acid ester monomer or a derivative thereof, preferably 99% by mass or less, particularly preferably 95% by mass or less, and more preferably 90% by mass. Contained in the following ratio.

The acrylic copolymer (a1) is obtained by copolymerizing the above-mentioned functional group-containing monomer and a (meth)acrylic acid ester monomer or a derivative thereof by a conventional method. In addition to these monomers, dimethylacrylamide, vinyl formate, vinyl acetate, Styrene and the like may be copolymerized.

An active energy ray-curable polymer (A) is obtained by reacting the acrylic copolymer (a1) having the functional group-containing monomer unit with an unsaturated group-containing compound (a2) having a functional group bonded to the functional group.

The functional group of the unsaturated group-containing compound (a2) can be appropriately selected depending on the type of functional group of the functional group-containing monomer unit of the acrylic copolymer (a1). For example, when the functional group of the acrylic copolymer (a1) is a hydroxy group, amino group, or substituted amino group, the functional group of the unsaturated group-containing compound (a2) is preferably an isocyanate group or an epoxy group, and the functional group of the acrylic copolymer (a1) is preferably an isocyanate group or an epoxy group. When the functional group is an epoxy group, the functional group of the unsaturated group-containing compound (a2) is preferably an amino group, a carboxyl group, or an aziridinyl group.

In addition, the unsaturated group-containing compound (a2) contains at least one, preferably 1 to 6, more preferably 1 to 4 energy ray polymerizable carbon-carbon double bonds per molecule. Specific examples of such unsaturated group-containing compound (a2) include, for example, 2-methacryloyloxyethyl isocyanate, meta-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1 ,1-(bisacryloyloxymethyl)ethyl isocyanate; An acryloyl monoisocyanate compound obtained by reaction of a diisocyanate compound or polyisocyanate compound and hydroxyethyl (meth)acrylate; An acryloyl monoisocyanate compound obtained by reaction of a diisocyanate compound or polyisocyanate compound, a polyol compound, and hydroxyethyl (meth)acrylate; glycidyl (meth)acrylate; (meth)acrylic acid, 2-(1-aziridinyl)ethyl (meth)acrylate, 2-vinyl-2-oxazoline, 2-isopropenyl-2-oxazoline, etc.

The unsaturated group-containing compound (a2) is preferably 50 mol% or more, particularly preferably 60 mol% or more, and more preferably 70 mol% or more relative to the mole number of functional group-containing monomers of the acrylic copolymer (a1). It is used as a ratio. In addition, the unsaturated group-containing compound (a2) is preferably 95 mol% or less, particularly preferably 93 mol% or less, and more preferably 90 mol%, relative to the mole number of functional group-containing monomers of the acrylic copolymer (a1). It is used at a ratio of % or less.

In the reaction between the acrylic copolymer (a1) and the unsaturated group-containing compound (a2), the temperature of the reaction depends on the combination of the functional group of the acrylic copolymer (a1) with the functional group of the unsaturated group-containing compound (a2), Pressure, solvent, time, presence or absence of catalyst, and type of catalyst can be appropriately selected. Accordingly, the functional group present in the acrylic copolymer (a1) reacts with the functional group in the unsaturated group-containing compound (a2), and the unsaturated group is introduced into the side chain of the acrylic copolymer (a1), forming an active energy ray-curable polymer (A). is obtained.

The weight average molecular weight (Mw) of the active energy ray-curable polymer (A) thus obtained is preferably 10,000 or more, particularly preferably 100,000 or more, and more preferably 150,000 or more. Furthermore, the weight average molecular weight (Mw) is preferably 1.5 million or less, especially 1.25 million or less, and more preferably 1 million or less. In addition, the weight average molecular weight (Mw) in this specification is a standard polystyrene conversion value measured by gel permeation chromatography (GPC method).

Even if the active energy ray-curable adhesive is mainly composed of a polymer having active energy ray-curable properties such as the active energy ray-curable polymer (A), the active energy ray-curable adhesive is composed of an energy ray-curable monomer and/or oligomer (B). It may contain more.

As the active energy ray-curable monomer and/or oligomer (B), for example, ester of a polyhydric alcohol and (meth)acrylic acid can be used.

Examples of such active energy ray-curable monomers and/or oligomers (B) include monofunctional acrylic acid esters such as cyclohexyl (meth)acrylate and isobornyl (meth)acrylate, and trimethylolpropane tri(meth)acrylate. ) Acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6 -Multifunctional acrylic acid esters such as hexanediol di(meth)acrylate, polyethylene glycol di(meth)acrylate, dimethylol tricyclodecane di(meth)acrylate, polyester oligo(meth)acrylate, polyurethane oligo (meth)acrylate, etc. can be mentioned.

When mixing an active energy ray curable monomer and/or oligomer (B) with the active energy ray curable polymer (A), the active energy ray curable monomer and/or oligomer (B) in the active energy ray curable adhesive The content is preferably more than 0 parts by mass, and is especially preferably 60 parts by mass or more, based on 100 parts by mass of the active energy ray-curable polymer (A). Furthermore, the content is preferably 250 parts by mass or less, and especially preferably 200 parts by mass or less, based on 100 parts by mass of the active energy ray-curable polymer (A).

Next, the case where the active energy ray-curable adhesive mainly contains a mixture of an active energy ray non-curable polymer component and a monomer and/or oligomer having at least one active energy ray curable group will be described below.

As the active energy ray non-curable polymer component, for example, a component similar to the acrylic copolymer (a1) described above can be used.

As the monomer and/or oligomer having at least one active energy ray-curable group, the same ones as the component (B) described above can be selected. The mixing ratio of the active energy ray non-curable polymer component and the monomer and/or oligomer having at least one active energy ray curable group is at least one active energy ray curable group per 100 parts by mass of the active energy ray non-curable polymer component. It is preferable that the monomer and/or oligomer it has is 1 part by mass or more, and it is especially preferable that it is 60 parts by mass or more. In addition, the mixing ratio is preferably 200 parts by mass or less of the monomer and/or oligomer having at least one active energy ray-curable group, based on 100 parts by mass of the active energy ray non-curable polymer component, and is particularly preferably 160 parts by mass or less. .

(3) Photopolymerization initiator

The photopolymerization initiator in this embodiment is not particularly limited. Since the interfacial ablation layer 11 in the present embodiment contains a photopolymerization initiator, the polymerization curing time and light irradiation amount of the interfacial ablation layer 11 are reduced, especially when ultraviolet rays are used as active energy rays, while effectively forming the interface. It becomes possible to harden the ablation layer 11.

The photopolymerization initiator (C) specifically includes benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin-n-butyl ether, benzoin isobutyl ether, acetophenone, and dimethylaminoaceto. Phenone, 2,2-dimethoxy-1,2-diphenylethan-1-one, 2,2-diethoxy-2-phenylacetophenone, 2-hydroxy-2-methyl-1-phenylpropane-1- one, 1-hydroxycyclohexylphenylketone, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-propan-1-one, 4-(2-hydroxyethoxy)phenyl -2-(hydroxy-2-propyl)ketone, 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholino-phenyl)butan-1-one, 1-[4-( 2-hydroxyethoxy)-phenyl]-2-hydroxy-methylpropanone, ethanone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-, 1-(0-acetyloxime), benzophenone, p-phenylbenzophenone, 4,4'-diethylaminobenzophenone, dichlorobenzophenone, 2-methylanthraquinone, 2-ethylanthraquinone, 2-tert-butyl Anthraquinone, 2-aminoanthraquinone, 2-methylthioxanthone, 2-ethylthioxanthone, 2-chlorothioxanthone, 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, benzyldimethylketal, acetophenone Dimethylketal, p-dimethylaminobenzoic acid ester, oligo[2-hydroxy-2-methyl-1[4-(1-methylvinyl)phenyl]propanone], 2-benzyl-2-(dimethylamino)-4' -morpholinobutyrophenone, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide, 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide, etc. are mentioned. These may be used individually, or two or more types may be used in combination.

Among the photopolymerization initiators (C) described above, 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholino-phenyl)butan-1-one, ethanone, 1-[9-ethyl- 6-(2-methylbenzoyl)-9H-carbazol-3-yl]-, 1-(0-acetyloxime), 2-benzyl-2-(dimethylamino)-4'-morpholinobutyrophenone, Bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide, 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide, and 2,2-dimethoxy-1,2-diphenylethane-1 It is preferable to use at least one type of -on.

The photopolymerization initiator (C) in this embodiment preferably has an absorption peak in a wavelength range of 250 nm or more and 500 nm or less. This makes it easier to satisfactorily cure the active energy ray-curable component, and makes it easier to reduce adhesion to the work piece. In addition, the absorption peak of the photopolymerization initiator (C) can be specified based on the description of the test example described later, and in particular, it can be specified from the absorbance of each wavelength of the photopolymerization initiator (C) measured according to the description of the test example described later. You can.

In addition, it is preferable that the photopolymerization initiator (C) in this embodiment satisfies the following conditions with respect to light absorbency.

That is, when using a high-pressure mercury lamp as an ultraviolet light source during curing of the interfacial ablation layer 11, the absorbance of light with a wavelength of 313 nm is preferably 0.1 or more, especially 0.2 or more, and even more preferably 0.3 or more. It is desirable. Additionally, the upper limit of the absorbance is not particularly limited, and may be, for example, 4.0 or less. Additionally, the absorbance of light with a wavelength of 365 nm is preferably 0.02 or more, especially 0.05 or more, and even more preferably 0.07 or more. Additionally, the upper limit of the absorbance is not particularly limited, and may be, for example, 4.0 or less. Additionally, the absorbance of light with a wavelength of 407 nm is preferably 0.001 or more, especially 0.002 or more, and even more preferably 0.003 or more. Additionally, the upper limit of the absorbance is not particularly limited, and may be, for example, 4.0 or less.

In addition, when using an ultraviolet LED as an ultraviolet light source when curing the interfacial ablation layer 11, the absorbance of light with a wavelength of 365 nm is preferably 0.02 or more, especially 0.05 or more, and even more preferably 0.07 or more. desirable. Additionally, the upper limit of the absorbance is not particularly limited, and may be, for example, 4.0 or less.

When the photopolymerization initiator (C) satisfies the above-mentioned light absorbance conditions, it becomes easy to satisfactorily cure the active energy ray-curable component, and it becomes easy to reduce adhesion to the work piece. In addition, the absorbance is determined by preparing a methanol solution with a concentration of 0.01% by mass of the photopolymerization initiator (if the photopolymerization initiator is insoluble in methanol, an acetonitrile solution) and measuring the wavelength in the range of 200 to 500 nm in the solution. The absorbance was measured using an ultraviolet-visible-near-infrared (UV-Vis-NIR) spectrophotometer (manufactured by Shimadzu Corporation, product name "UV-3600", optical path length 10 mm).

The content of the photopolymerization initiator (C) in the interface ablation 11 is preferably 0.1 part by mass or more, particularly preferably 0.3 part by mass or more, and more preferably 0.5 part by mass, based on 100 parts by mass of the active energy ray curable component. It is desirable to have more than that. In addition, the content is preferably 20 parts by mass or less, especially 15 parts by mass or less, and more preferably 10 parts by mass or less, based on 100 parts by mass of the active energy ray-curable component. When the content of the photopolymerization initiator (C) is within the above range, it becomes easy to effectively cure the interfacial ablation layer 11.

(4) Other ingredients

When the active energy ray-curable component in the present embodiment is an active energy ray-curable adhesive, in addition to the above components, other components may be blended as appropriate. Other components include, for example, an active energy ray non-curable polymer component or oligomer component (D), a crosslinking agent (E), etc.

Examples of the active energy ray non-curable polymer component or oligomer component (D) include polyacrylic acid ester, polyester, polyurethane, polycarbonate, polyolefin, etc., and have a weight average molecular weight (Mw) of 30 million to 2.5 million. Polymers or oligomers are preferred. By mixing the component (D) into an energy-ray curable adhesive, the adhesiveness and peelability before curing, the strength after curing, adhesion to other layers, storage stability, etc. can be improved. The mixing amount of the component (D) is not particularly limited and is appropriately determined in the range of more than 0 parts by mass and 50 parts by mass or less with respect to 100 parts by mass of the energy ray-curable copolymer (A).

The use of a crosslinking agent (E) is preferable from the viewpoint that it is easy to adjust the storage elastic modulus of the interfacial ablation layer 11 to a desired range. As the crosslinking agent (E), a polyfunctional compound that has reactivity with the functional group of the active energy ray-curable copolymer (A) or the like can be used. Examples of such multifunctional compounds include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, aziridine compounds, hydrazine compounds, aldehyde compounds, oxazoline compounds, metal alkoxide compounds, metal chelate compounds, metal salts, ammonium salts, reactive phenol resins, etc. can be mentioned.

The compounding amount of the crosslinking agent (E) is preferably 0.001 parts by mass or more, especially 0.1 parts by mass or more, and more preferably 0.2 parts by mass or more, based on 100 parts by mass of the active energy ray-curable copolymer (A). Moreover, the compounding amount of the crosslinking agent (E) is preferably 20 parts by mass or less, particularly preferably 10 parts by mass or less, and more preferably 5 parts by mass or less, with respect to 100 parts by mass of the active energy ray-curable copolymer (A). do.

Additionally, the interfacial ablation layer 11 may contain additives such as a tackifier, coloring materials such as dyes and pigments, flame retardants, fillers, and antistatic agents. In addition, it is preferable not to contain a gas generating agent in the interface ablation layer 11 from the viewpoint of easy separation of work pieces. When a gas generating agent is used, gas may be generated throughout the interface ablation layer 11. In that case, there are cases where interface ablation occurs only at the intended location, making it difficult to separate only the small work pieces located there, making it difficult to separate the small work pieces satisfactorily.

(5) Thickness of interfacial ablation layer

The thickness of the interface ablation layer 11 in this embodiment is preferably 3 μm or more, particularly preferably 20 μm or more, and more preferably 25 μm or more. Additionally, the thickness of the interface ablation layer 11 is preferably 100 μm or less, especially 50 μm or less, and more preferably 40 μm or less. When the thickness of the interface ablation layer 11 is within the above range, it is easy to achieve both maintenance of the small work pieces on the interface ablation layer 11 and separation of the work pieces by the interface ablation.

2. Description

The base material 12 in this embodiment is not particularly limited in terms of its composition or physical properties. From the viewpoint that the work handling sheet 1 can easily exhibit the desired function, the base material 12 is preferably made of resin. When the base material 12 is made of resin, examples of the resin include polyester resins such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; Polyolefin resins such as polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, ethylene-norbornene copolymer, and norbornene resin; ethylene-vinyl acetate copolymer; Ethylene-based copolymer resins such as ethylene-(meth)acrylic acid copolymer, ethylene-methyl (meth)acrylate copolymer, and other ethylene-(meth)acrylic acid ester copolymers; Polyvinyl chloride-based resins such as polyvinyl chloride and vinyl chloride copolymer; (meth)acrylic acid ester copolymer; Polyurethane; polyimide; polystyrene; polycarbonate; Fluororesin, etc. can be mentioned. In addition, the resin constituting the base material 12 may be a crosslinked product of the above-mentioned resin or a modified product such as an ionomer of the above-mentioned resin. In addition, the base material 12 may be a single-layer film made of the above-mentioned resin, or may be a laminated film in which a plurality of the above films are laminated. In this laminated film, the materials constituting each layer may be of the same type or may be of different types.

The surface of the substrate 12 in this embodiment may be subjected to surface treatment using an oxidation method, a roughening method, or a primer treatment for the purpose of improving adhesion to the interface ablation layer 11. Examples of the oxidation method include corona discharge treatment, plasma discharge treatment, chromium oxidation treatment (wet process), flame treatment, hot air treatment, ozone, and ultraviolet irradiation treatment, and examples of the roughening method include sand blasting. Examples include methods of spraying and spraying.

The base material 12 in this embodiment may contain various additives such as colorants, flame retardants, plasticizers, antistatic agents, lubricants, and fillers. Additionally, when the interfacial ablation layer 11 contains a material that is cured by active energy rays, the substrate 12 preferably has transparency to active energy rays.

The manufacturing method of the base material 12 in this embodiment is not particularly limited as long as the base material 12 is manufactured from resin. For example, melt extrusion methods such as the T die method and the ring die method; calendar method; It can be manufactured by molding the resin into a sheet shape using a solution method such as a dry method or a wet method.

The thickness of the base material 12 in this embodiment is preferably 10 μm or more, particularly preferably 30 μm or more, and more preferably 50 μm or more. Additionally, the thickness of the substrate 12 is preferably 500 μm or less, more preferably 300 μm or less, particularly preferably 200 μm or less, further preferably 150 μm or less, and most preferably 100 μm or less. When the thickness of the base material 12 is within the above range, the work handling sheet 1 has a predetermined balance of rigidity and flexibility, making it easy to handle small work pieces well.

3. Release sheet

In the present embodiment, when the interfacial ablation layer 11 contains an adhesive as one of its constituent components, the surface of the interfacial ablation layer 11 opposite to the substrate 12 is attached to a small work piece. For the purpose of protecting the surface during this period, a release sheet may be laminated on the surface.

The configuration of the release sheet is arbitrary, and an example is one in which a plastic film has been subjected to a release treatment using a release agent or the like. Specific examples of the plastic film include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and polyolefin films such as polypropylene and polyethylene. As the release agent, silicone-based, fluorine-based, long-chain alkyl-based, etc. can be used, and among these, silicone-based is preferable because it is inexpensive and provides stable performance.

There is no particular limitation on the thickness of the release sheet, and for example, it may be 20 μm or more and 250 μm or less.

4. Other configurations

In the work handling sheet 1 according to the present embodiment, an adhesive layer may be laminated on the surface of the interface ablation layer 11 opposite to the substrate 12. In the above sheet, a work is attached to the side of the adhesive layer opposite to the interface ablation layer 11, and the adhesive layer is diced together with the work to obtain small work pieces in which the separated adhesive layers are laminated. You can. The chip can be easily fixed to the object on which the work piece is mounted by this separate adhesive layer. As the material constituting the above-mentioned adhesive layer, it is preferable to use a material containing a thermoplastic resin and a low molecular weight thermosetting adhesive component, or a material containing a B stage (semi-cured burn) thermosetting adhesive component.

Additionally, in the work handling sheet 1 according to the present embodiment, a protective film forming layer may be laminated on the surface of the interface ablation layer 11 opposite to the substrate 12. In such a sheet, a work is attached to the surface of the protective film forming layer opposite to the interface ablation layer 11, and the protective film forming layer is diced together with the work to obtain small work pieces in which the separate protective film forming layers are laminated. You can. As the work, it is preferable to use one on which a circuit is formed on one side, and in this case, a protective film forming layer is usually laminated on the side opposite to the side on which the circuit is formed. By curing the separated protective film forming layer at a predetermined timing, a protective film with sufficient durability can be formed on a small piece of work. The protective film forming layer is preferably made of an uncured curable adhesive.

5. Physical properties of work handling sheets

In the work handling sheet according to the present embodiment, the adhesive force to the mirror surface of the silicon wafer (adhesive force before active energy ray irradiation) is preferably 300 mN/25 mm or more, particularly preferably 320 mN/25 mm or more, and more preferably 350 mN. ／It is preferable to be 25 mm or more. When the adhesive force is 300 mN/25 mm or more, it becomes easy to secure adherends such as small work pieces to the work handling sheet, resulting in more excellent handling properties. In particular, with respect to the work handling sheet according to the present embodiment, when transferring a small work piece provided on another sheet, etc., the work handling sheet according to the present embodiment can easily hold the small work piece, so that the small work piece is not placed on the other sheet. It becomes difficult for anything to remain. Additionally, the adhesive force is preferably 30,000 mN/25 mm or less, particularly preferably 20,000 mN/25 mm or less, and more preferably 15,000 mN/25 mm or less. When the adhesive force is 30000 mN/25 mm or less, it becomes easier to separate work pieces by irradiating laser light more effectively.

In addition, in the work handling sheet according to the present embodiment, the surface of the interface ablation layer 11 opposite to the substrate 12 is attached to the mirror surface of a silicon wafer, and high pressure is applied to the interface ablation layer 11. The adhesion to the mirror surface of the silicon wafer after curing the interface ablation layer 11 by irradiating ultraviolet rays using a mercury lamp is preferably 300 mN/25 mm or less, and especially preferably 250 mN/25 mm or less, Moreover, it is preferable that it is 200mN/25mm or less. When the adhesive force is 300 mN/25 mm or less, it becomes easy to separate work pieces well by subsequent interface ablation. In addition, the lower limit of the adhesive strength is not particularly limited, and may be, for example, 10 mN/25 mm or more, especially 20 mN/25 mm or more, and even 30 mN/25 mm or more.

In addition, the details of the method for measuring these adhesive forces are as described in the test examples described later.

6. Manufacturing method of work handling sheet

The manufacturing method of the work handling sheet 1 according to this embodiment is not particularly limited. For example, the interfacial ablation layer 11 may be formed directly on the substrate 12, or the interfacial ablation layer 11 may be formed on a process sheet and then the interfacial ablation layer 11 may be applied to the substrate. (12) It may be transferred onto the image.

When the interfacial ablation layer 11 contains an adhesive as one of its constituent components, the interfacial ablation layer 11 can be formed by a known method. For example, an adhesive composition for forming the interfacial ablation layer 11 and a coating liquid further containing a solvent or dispersion medium as desired are prepared. Then, the above-mentioned coating liquid is applied to one side of the substrate or the releasable side of the release sheet (hereinafter sometimes referred to as “release surface”). Subsequently, the interfacial ablation layer 11 can be formed by drying the obtained coating film.

Application of the above-mentioned coating liquid can be performed by a known method, for example, a bar coating method, a knife coating method, a roll coating method, a blade coating method, a die coating method, or a gravure coating method. In addition, the properties of the coating liquid are not particularly limited as long as it can be applied. In some cases, it contains a component for forming the interface ablation layer 11 as a solute or as a dispersoid. There is also. In addition, when the interfacial ablation layer 11 is formed on the release sheet, the release sheet may be peeled off as a process material, and may protect the interface ablation layer 11 until it is attached to the adherend. good night.

When the adhesive composition for forming the interfacial ablation layer 11 contains the above-mentioned crosslinking agent, the polymer component in the coating film is removed by changing the drying conditions (temperature, time, etc.) described above or by separately providing heat treatment. It is preferable to proceed with the crosslinking reaction between the crosslinking agent and the crosslinking agent to form a crosslinked structure at a desired density within the interfacial ablation layer 11. In addition, in order to sufficiently advance the above-mentioned crosslinking reaction, after completion of the work handling sheet 1, curing may be performed, for example, by leaving it to stand in an environment of 23° C. and 50% relative humidity for several days.

7. How to use the work handling sheet

The work handling sheet 1 according to this embodiment can be suitably used for handling small work pieces. As described above, in the work handling sheet 1 according to the present embodiment, the interface ablation layer 11 is one that efficiently performs interface ablation by irradiation of laser light, so that the interface ablation layer 11 is The held work pieces can be separated toward a predetermined position with high precision.

As an example of a method of using the work handling sheet 1 according to the present embodiment, the substrate 12 in the interface ablation layer 11 is removed by interfacial ablation locally generated in the interface ablation layer 11. One possible use method is to selectively separate any work piece from the plurality of work pieces held on the opposite side from the interface ablation layer 11.

In the above usage method, the plurality of work pieces held on the interface ablation layer 11 are works held on the surface opposite to the substrate 12 in the interface ablation layer 11 (material of the work pieces). It may be obtained by reorganizing) into pieces on the above-mentioned surface. That is, the work pieces may be obtained by dicing the work on the interface ablation layer 11. Alternatively, the work piece may be formed independently from the work handling sheet 1 according to the present embodiment and placed on the interface ablation layer 11.

Additionally, when the work handling sheet 1 according to the present embodiment is provided with the adhesive layer or protective film forming layer described above, it is preferable to dice these layers and the work on the interface ablation layer 11. Accordingly, it is possible to obtain small workpieces in which these layers are separated and laminated.

There is no particular limitation on the shape or size of the small work piece in the present embodiment, but with regard to size, the small work piece preferably has an area of 10 ㎛ ² or more when viewed in plan view, and especially 100 ㎛ ² or more. It is desirable. Additionally, the area of the small work piece when viewed in plan view is preferably 1 mm2 or less, and especially preferably 0.25 mm2 or less. Additionally, as for the size of the work piece, when the work piece is rectangular, the smallest side of the work piece is preferably 2 μm or more, particularly preferably 5 μm or more, and more preferably 10 μm or more. In addition, the minimum one side is preferably 1 mm or less, and particularly preferably 0.5 mm or less. Specific examples of the dimensions of the small rectangular work pieces include 2 μm × 5 μm, 10 μm × 10 μm, 0.5 mm × 0.5 mm, and 1 mm × 1 mm. The work handling sheet 1 according to the present embodiment can favorably handle such fine work pieces, especially fine work pieces that are difficult to separate from the sheet by pushing up the needle. On the other hand, the work handling sheet 1 according to the present embodiment has an area exceeding 1 mm2 (for example, 1 mm2 to 2000 mm2) or a thickness of 1 to 10000 μm (for example, 10000 μm). Even small workpieces of relatively large sizes (~1000㎛) can be handled well.

Small work pieces include semiconductor components and semiconductor devices, and more specifically, micro light emitting diodes, power devices, and MEMS (Micro Electro Mechanical Systems). Among these, the work piece is preferably a light emitting diode, and is particularly preferably a light emitting diode selected from mini light emitting diodes and micro light emitting diodes. In recent years, the development of devices in which mini light-emitting diodes and micro light-emitting diodes are arranged at high density have been studied, and in the manufacture of such devices, a work handling sheet (1) according to this embodiment that can handle these light-emitting diodes with high precision is used. ) is very suitable.

Below, as a specific example of use of the work handling sheet 1, a device manufacturing method will be explained based on FIG. 2. The device manufacturing method includes a preparation process ((a) in Figure 2), a batch process ((b) in Figure 2), a curing process ((c) in Figure 2), and a separation process ((d) in Figure 2 and At least four processes such as (e)) are provided.

In the preparation process, as shown in Figure 2 (a), a plurality of work pieces 2 are held on the surface of the work handling sheet 1 according to the present embodiment on the side of the interface ablation layer 11. Prepare a laminate consisting of: The laminate may be prepared by placing separately manufactured work pieces 2 on the work handling sheet 1, or the work held on the surface on the interface ablation layer 11 side may be reorganized on this surface. You can prepare it by mashing it (i.e. dicing it). The dicing can be performed by a known method.

As described above, the shape and size of the work piece 2 are not particularly limited, and the preferred size is also as described above. Specific examples of the small work piece 2 include semiconductor components and semiconductor devices, as described above, and in particular, light emitting diodes such as mini light emitting diodes and micro light emitting diodes.

In the subsequent arrangement process, as shown in (b) of FIG. 2, the work pieces 2 are stacked so that the surfaces of the work pieces 2 in the laminate face each other with respect to the object 3 that can accommodate the work pieces 2. Place the sieve. Examples of the object 3 are appropriately determined depending on the device to be manufactured, but when the work piece 2 is a light emitting diode, specific examples of the object 3 include a board, sheet, reel, etc., especially wiring. This provided wiring board is preferably used.

Thereafter, in the curing process, as shown in FIG. 2 (c), the entire interface ablation layer 11 in the laminate is irradiated with the active energy ray 4 to form the interface ablation layer 11. is hardened overall. Accordingly, the interface ablation layer 11 becomes a hardened interface ablation layer 11'. In addition, in Figure 2 (c), the active energy ray 4 is irradiated to the entire interface ablation layer 11, but the irradiation is performed on at least the interface ablation layer 11. This may be carried out only at the position where one work piece 2 is attached, and the interface ablation layer 11 may be cured locally accordingly.

Irradiation of the above-described active energy ray 4 may be performed using a known method, for example, an ultraviolet irradiation device equipped with a high-pressure mercury lamp or an ultraviolet LED as a light source, or a laser used in the separation process described later. A light irradiation device may be used.

Thereafter, in the separation process, as shown in Figure 2 (d), at least one work piece 2 is attached to the position in the interface ablation layer 11' after curing of the laminate. For this, laser light (5) is irradiated. The above irradiation may be performed simultaneously on a plurality of positions where the work piece 2 is attached, or may be performed sequentially on these positions. Irradiation conditions for the laser light 5 are not limited as long as it is possible to generate interface ablation. As a laser beam irradiation device for irradiation, a known device can be used.

In addition, when irradiation of the active energy ray 4 in the curing process and irradiation of the laser light 5 in the separation process are both performed using the laser beam irradiation device described above, the curing process and the separation process may be performed simultaneously. good night. That is, the irradiation of the laser light 5 in the separation process is performed simultaneously with the irradiation of the active energy ray 4 in the curing process, and local curing of the interfacial ablation layer 11 and interfacial ablation are performed simultaneously. It's also good. In this case, the peak wavelength of the irradiated laser light 5 is preferably 300 nm or more, particularly preferably 310 nm or more, and more preferably 350 nm or more. Additionally, the peak wavelength is preferably 400 nm or less, particularly preferably 390 nm or less, and more preferably 380 nm or less. By irradiating the laser light 5 having such a wavelength, curing of the interfacial ablation layer 11 and interfacial ablation can easily proceed satisfactorily.

On the other hand, as shown in FIG. 2, when the curing process and the separation process are performed as independent processes, an ultraviolet irradiation device (particularly, a device equipped with an ultraviolet LED as a light source and a laser light irradiation device) used in the curing process. The peak wavelength of the active energy ray 4 irradiated from is preferably 300 nm or more, particularly preferably 310 nm or more, and more preferably 320 nm or more. Additionally, the peak wavelength is preferably 400 nm or less, particularly preferably 390 nm or less, and more preferably 380 nm or less. And, the peak wavelength of the laser light 5 irradiated from the laser light irradiation device used in the separation process is preferably 300 nm or more, especially preferably 310 nm or more, and more preferably 320 nm or more. Additionally, the peak wavelength is preferably 400 nm or less, particularly preferably 390 nm or less, and more preferably 380 nm or less. In the curing process and the separation process, the curing of the interfacial ablation layer 11 and the interfacial ablation are improved in each process by irradiating the active energy ray 4 and the laser beam 5 each having the peak wavelength as described above. It becomes easy to proceed.

By irradiation of the above-mentioned laser light 5, interface ablation can be generated at the irradiated position in the cured interface ablation layer 11', as shown in FIG. 2(e). Specifically, by irradiation of the laser light 5, the components constituting the region are evaporated or It volatilizes to become the reaction region (13). Then, the gas generated by the evaporation or volatilization collects between the substrate 12 and the reaction region 13, forming a blister 6. By forming the blister 6, the cured interfacial ablation layer 11' is deformed locally at the position of the work piece 2', and the work is peeled off from the cured interfacial ablation layer 11. The small piece (2') is separated. As a result of the above, the work piece 2' existing at the position where the interface ablation occurred can be placed on the object 3.

Additionally, the reaction area 13 and blisters 6 generated by irradiation of the laser light 5 usually remain even after the work pieces 2' are separated. Figure 3 shows the separation of work pieces 2 by sequential irradiation of laser light, particularly the state after separation (two pieces on the left), the state during separation (center), and the state before separation (two pieces on the right). dog) appears. As shown, the blister 6 after separation is usually in a slightly collapsed state compared to the blister 6 during separation.

The device manufacturing method described above may include processes other than a preparation process, a batch process, a curing process, and a separation process. For example, grinding, die bonding, wire bonding, molding, inspection, transfer processes, etc. may be performed at any timing between the preparation process and the separation process.

According to the device manufacturing method described above, various devices can be manufactured by appropriately selecting the work piece 2 or object 3 to be used. For example, when a light emitting diode selected from mini light emitting diodes and micro light emitting diodes is used as the work piece 2, a light emitting device having a plurality of such light emitting diodes can be manufactured, and more specifically, a display can be manufactured. can do. In particular, a display including micro light-emitting diodes as pixels or a display including a plurality of mini light-emitting diodes as backlights can be manufactured.

The embodiments described above are described to facilitate understanding of the present invention and are not intended to limit the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents that fall within the technical scope of the present invention.

For example, between the interface ablation layer 11 and the substrate 12 in the work handling sheet 1 according to the present embodiment, or on the side opposite to the interface ablation layer 11 of the substrate 12. Other layers may be laminated on the surface. Specific examples of the other layers include an adhesive layer. In this case, the above-mentioned separation process, etc. can be performed with the surface on the adhesive layer side affixed to a support (transparent substrate such as a glass plate).

The adhesive constituting the adhesive layer is not particularly limited, but is preferably one that is difficult to absorb active energy rays and difficult to block active energy rays. In this case, when laser light is irradiated through the adhesive layer, the laser light easily reaches the interface ablation layer 11, making it easy to generate good interface ablation. Specifically, as the adhesive constituting the adhesive layer, it is preferable to use an adhesive that does not have active energy ray curing properties, and it is especially preferable to use an adhesive that does not contain an active energy ray curing component. By using an adhesive that does not have active energy ray curing properties, the adhesive layer does not harden even when irradiated with the laser light, thereby preventing unintentional peeling of the work handling sheet 1 from the transparent substrate. It becomes possible. The thickness of the adhesive layer is not particularly limited, but is preferably 5 to 50 μm, for example.

Example

Hereinafter, the present invention will be described in more detail through examples, etc., but the scope of the present invention is not limited to these examples.

[Example 1]

(1) Preparation of adhesive composition

80 parts by mass of 2-ethylhexyl acrylate and 20 parts by mass of 2-hydroxyethyl acrylate were polymerized by solution polymerization to obtain a (meth)acrylic acid ester polymer. With respect to this (meth)acrylic acid ester polymer, 80 mol% of methacryloyloxyethyl isocyanate (MOI) was reacted with respect to 2-hydroxyethyl acrylate to produce an acrylic polymer (active energy ray-curable group introduced into the side chain). energy ray curable component) was obtained. The weight average molecular weight (Mw) of this acrylic polymer was measured by the method described above and was found to be 1 million.

100 parts by mass of the acrylic polymer into which an active energy ray-curable group was introduced into the side chain obtained above (in terms of solid content, the same applies hereinafter), and 2.0 parts by mass of trimethylolpropane-modified tolylene diisocyanate (manufactured by TOSOH CORPORATION, brand name "Colonate L") as a crosslinking agent. 3.0 parts by mass of 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholino-phenyl)butan-1-one (manufactured by IGM Resins, product name “Omnirad379”) as a photopolymerization initiator. , and tris[2,4,6-[2-{4-(octyl-2-methylethanoate)oxy-2-hydroxyphenyl}]-1,3,5-triazine(hydroxyl) as an ultraviolet absorber. 8.0 parts by mass of a phenyltriazine-based ultraviolet absorber (manufactured by BASF Corporation, product name “Tinuvin477”) was mixed in a solvent to obtain a coating liquid of the adhesive composition.

(2) Formation of an interfacial ablation layer (adhesive layer)

Applying the adhesive composition obtained in the above step (1) to the peeling surface of a release sheet (manufactured by LINTEC Corporation, product name “SP-PET381031”), which is formed on one side of a polyethylene terephthalate film with a thickness of 38 μm and a silicone-based release agent layer is formed. The liquid was applied, and the obtained coating film was dried by heating. As a result, a laminate was obtained by laminating a 30-μm-thick interfacial ablation layer formed by drying the coating film and a release sheet.

(3) Production of work handling sheets

By bonding the surface on the interface ablation layer side of the laminate obtained in the above step (2) with one side of a polyethylene terephthalate film (manufactured by Mitsubishi Chemical Corporation, product name "T-910 WM19", thickness: 50 μm) as a substrate. , a work handling sheet with a release sheet attached thereto was obtained.

Here, the weight average molecular weight (Mw) described above is the weight average molecular weight in terms of standard polystyrene measured (GPC measurement) using gel permeation chromatography (GPC) under the following conditions.

<Measurement conditions>

·Measurement device: manufactured by TOSOH CORPORATION, HLC-8320

·GPC column (passed in the following order): manufactured by TOSOH CORPORATION

TSK gel superH-H

TSK gel superHM-H

TSK gel superH2000

·Measurement solvent: tetrahydrofuran

·Measurement temperature: 40℃

[Examples 2 to 8 and Comparative Examples 1 to 3]

A work handling sheet was manufactured in the same manner as in Example 1, except that the composition of the active energy ray-curable component, the content of the crosslinking agent, the type of photopolymerization initiator, and the type and content of the ultraviolet absorber were changed as shown in Table 1.

[Test Example 1] (Measurement of absorbance of photopolymerization initiator and ultraviolet absorber)

The photopolymerization initiator used in the examples and comparative examples was dissolved in acetonitrile as a solvent to prepare a measurement solution with a concentration of 0.01% by mass. For the above measurement solution, the wavelengths 313 nm, 355 nm, 365 nm, Absorbance at 380 nm and 407 nm was measured. The results are shown in Table 2.

In addition, for the ultraviolet absorbers used in the examples and comparative examples, a measurement solution was prepared in the same manner as above, and the absorbance was measured at wavelengths of 313 nm, 355 nm, 365 nm, 380 nm, and 407 nm in the same manner as above. The results are shown in Table 2.

[Test Example 2] (Measurement of adhesive force)

The work handling sheets manufactured in the examples and comparative examples were cut into strips with a width of 25 mm. The peeling sheet is peeled off from the obtained single work handling sheet, and the exposed surface of the exposed interface ablation layer is subjected to mirror surface processing. The temperature is 23°C and the relative humidity is 23°C. In a 50% environment, it was attached using a 2 kg rubber roller and left to stand for 20 minutes to serve as a sample for measuring adhesive force.

Afterwards, using a universal tensile tester (manufactured by Orientec Inc., product name “TENSILON UTM-4-100”), the work handling sheet was peeled from the silicon wafer at a peeling speed of 300 mm/min and a peeling angle of 180°, and JIS The adhesive force (mN/25 mm) to the mirror surface of the silicon wafer was measured using the 180° peeling method according to Z0237:2009. The results are shown in Table 1 as the adhesive strength before ultraviolet irradiation.

Additionally, an ultraviolet irradiation device (manufactured by LINTEC Corporation, product name "RAD-2000") equipped with a high-pressure mercury lamp as a light source was used for the interface ablation layer in the sample for adhesion measurement obtained in the same manner as above, through a substrate. Then, ultraviolet rays (UV) were irradiated (illuminance: 230 mW/cm2, light quantity: 190 mJ/cm2), and the interface ablation layer was cured. For this sample for measuring adhesive force after irradiation with ultraviolet rays, the adhesive force (mN/25 mm) to the mirror surface of the silicon wafer was measured in the same manner as above. The results are shown in Table 1 as adhesive strength after ultraviolet irradiation.

[Test Example 3] (Evaluation of Laser Lift-Off Aptitude)

(1) Preparation of chips on the work handling sheet (preparation process)

The adhesive side of a dicing sheet (manufactured by LINTEC Corporation, product name “D-485H”) was attached to one side of a silicon wafer (#2000, thickness: 350 μm). Subsequently, a ring frame for dicing was attached to the peripheral portion of the adhesive surface of the dicing sheet (a position that does not overlap with the silicon wafer). Additionally, the dicing sheet was cut to match the outer diameter of the ring frame. Thereafter, the silicon wafer was diced into chips having a size of 300 µm x 300 µm using a dicing device (manufactured by DISCO CORPORATION, product name “DFD6362”).

Subsequently, the release sheet was peeled from the work handling sheet manufactured in the examples and comparative examples, and the exposed surface thus exposed was bonded to the surface of the laminate obtained as above where a plurality of chips were present. After that, the dicing sheet was peeled from the plurality of chips. Accordingly, a plurality of chips were transferred from the dicing sheet to a work handling sheet, and a laminate in which a plurality of chips were provided on the work handling sheet was obtained. In addition, since the work handling sheet according to Comparative Example 3 did not have sufficient adhesive force to hold the chip, the subsequent process was not performed, and the laser lift-off suitability was not evaluated along with it.

(2) Separation of chips by irradiation of active energy rays (curing process) and irradiation of laser light (separation process)

The laminate obtained in the above step (1) was subjected to irradiation of active energy rays (curing process) and separation of chips by irradiation with laser light (separation process). These curing processes and separation processes were each performed in three ways under the following conditions 1, 2, and 3.

(2-1) Condition 1

Using an ultraviolet irradiation device (manufactured by LINTEC Corporation, product name “RAD-2100”) equipped with an ultraviolet LED as a light source, ultraviolet rays were irradiated to the surface on the work handling sheet side of the above-described laminate (illuminance 200 mW/cm2, By applying an integrated light amount of 200 mJ/cm2), the entire interface ablation layer on the work handling sheet was cured. In addition, in the above ultraviolet LED, the emission spectrum of energy rays including ultraviolet rays emitted includes a single emission peak with a maximum intensity of 365 nm and a full width at half maximum of 10 nm.

After that, laser light was irradiated to the chip through the work handling sheet using a laser light irradiation device (YAG third harmonic (wavelength 355 nm), pulse width 20 ns, light quantity 700 mJ/cm2). The above irradiation was performed on an area of 270 μm × 270 μm in the center of the chip. Other irradiation conditions were frequency: 30 kHz, irradiation amount: 50 μJ/shot. Additionally, the survey was conducted on 100 chips (matching 10 chips vertically and 10 horizontally) from a plurality of chips.

(2-2) Condition 2

Using an ultraviolet irradiation device (manufactured by LINTEC Corporation, product name “RAD-2000”) equipped with a high-pressure mercury lamp as a light source, ultraviolet rays were irradiated to the surface on the work handling sheet side of the above-described laminate (illuminance: 230 mW/ cm2, light quantity: 190 mJ/cm2), thereby curing the entire interface ablation layer in the work handling sheet.

After that, laser light was irradiated to the chip through the work handling sheet using a laser light irradiation device (YAG third harmonic (wavelength 355 nm), pulse width 20 ns, light quantity 700 mJ/cm2). The above irradiation was performed on an area of 270 μm × 270 μm in the center of the chip. Other irradiation conditions were frequency: 30 kHz, irradiation amount: 50 μJ/shot. Additionally, the survey was conducted on 100 chips (matching 10 chips vertically and 10 horizontally) from a plurality of chips.

(2-3) Condition 3

Using a laser light irradiation device (YAG third harmonic (wavelength 355 nm), pulse width 20 ns, light quantity 700 mJ/cm2), laser light is irradiated to the chip through the work handling sheet, and the interface ablation layer is irradiated. At the same time as hardening the position, interfacial ablation occurred. Additionally, the above irradiation was conducted on an area of 270 μm × 270 μm in the center of the chip. Other irradiation conditions were frequency: 30 kHz, irradiation amount: 50 μJ/shot. Additionally, the survey was conducted on 100 chips (matching 10 chips vertically and 10 horizontally) from a plurality of chips.

(3) Confirmation of blisters and chip separation

For the work handling sheets and chips that were investigated above, for each condition, the presence or absence of blisters at the interface between the substrate in the work handling sheet and the interfacial ablation layer, and the detachment of chips from the work handling sheet. The presence or absence of was confirmed and the laser lift-off aptitude was evaluated based on the following criteria. The results are shown in Table 1.

○ … The number of chips that blistered and fell off was 80 or more.

× … The number of chips that blistered and fell off was less than 80.

In addition, details such as abbreviations shown in Table 1 and Table 2 are as follows.

[Light polymerization initiator]

Omnirad379: 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholino-phenyl)butan-1-one (manufactured by IGM Resins, product name “Omnirad379”)

IrugacureOXE02: Ethanone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-, 1-(0-acetyloxime) (manufactured by BASF Corporation, product name “IrugacureOXE02”)

Omnirad651: 2,2-dimethoxy-1,2-diphenylethan-1-one (manufactured by IGM Resins, product name “Omnirad651”)

Omnirad819: Bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide (manufactured by IGM Resins, product name “Omnirad819”)

OmniradTPO: 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide (manufactured by IGM Resins, product name “OmniradTPO”)

Omnirad184: 1-hydroxy-cyclohexyl-phenyl-ketone (manufactured by IGM Resins, product name “Omnirad184”)

[UV absorbent]

Tinuvin477: Tris[2,4,6-[2-{4-(octyl-2-methylethanoate)oxy-2-hydroxyphenyl}]-1,3,5-triazine (hydroxyphenyltriazine series Ultraviolet absorber, manufactured by BASF Corporation, product name “Tinuvin477”)

Tinuvin400: 2-[4-(2-hydroxy-3-dodecyloxy-propyl)oxy-2-hydroxyphenyl]-4,6-[bis(2,4-dimethylphenyl)-1,3,5 -triazine and 2-[4-(2-hydroxy-3-tridecyloxy-propyl)oxy-2-hydroxyphenyl]-4,6-[bis(2,4-dimethylphenyl)-1,3 , 5-triazine mixture (hydroxyphenyltriazine type ultraviolet absorber, manufactured by BASF Corporation, product name “Tinuvin400”)

[Table 1]

[Table 2]

As is clear from Table 1, the work handling sheets manufactured in Examples had excellent laser lift-off aptitude.

The work handling sheet of the present invention can be suitably used in the manufacture of displays including micro light-emitting diodes as pixels.

1: Work handling seat
11, 11': Interfacial ablation layer
12: Description
13: reaction area
2, 2': Work small piece
3: object
4: Active energy line
5: Laser light
6: Blister

Claims (22)

With equipment,
A work handling sheet that is laminated on one side of the substrate and has an interfacial ablation layer that is capable of holding small work pieces and performs interfacial ablation by irradiation of laser light,
A work handling sheet, wherein the interfacial ablation layer contains an active energy ray-curable component, a photopolymerization initiator, and an ultraviolet absorber. According to paragraph 1,
A work handling sheet, wherein the active energy ray curable component is an active energy ray curable adhesive. According to paragraph 2,
A work handling sheet, wherein the active energy ray-curable adhesive is an acrylic adhesive. According to paragraph 2 or 3,
A work handling sheet, characterized in that the adhesive force to the mirror surface of the silicon wafer is 300 mN/25 mm or more and 30000 mN/25 mm or less. According to any one of claims 2 to 4,
The surface of the interfacial ablation layer opposite to the substrate is attached to the mirror surface of a silicon wafer, and the interfacial ablation layer is cured by irradiating ultraviolet rays using a high-pressure mercury lamp. A work handling sheet, characterized in that the adhesive force of the silicon wafer to the mirror surface is 10 mN/25 mm or more and 300 mN/25 mm or less. According to any one of claims 1 to 5,
A work handling sheet, characterized in that the photopolymerization initiator has an absorption peak in a wavelength range of 250 nm to 500 nm. According to any one of claims 1 to 6,
A work handling sheet, characterized in that the ultraviolet absorber is an organic compound. According to any one of claims 1 to 7,
A work handling sheet, characterized in that the ultraviolet absorber is a compound having one or more heterocycles. According to any one of claims 1 to 8,
The ultraviolet absorber has at least one type of carbocyclic ring and heterocyclic ring,
A work handling sheet, wherein all of the carbocycles and heterocycles of the ultraviolet absorber are monocyclic. According to any one of claims 1 to 9,
A work handling sheet, characterized in that the ultraviolet absorber is a compound having a plurality of aromatic rings. According to any one of claims 1 to 10,
A work handling sheet, characterized in that the content of the ultraviolet absorber in the interfacial ablation layer is 1% by mass or more and 75% by mass or less. According to any one of claims 1 to 11,
A work handling sheet, characterized in that the laser light has a wavelength in the ultraviolet range. According to any one of claims 1 to 12,
A work handling sheet, wherein when interfacial ablation occurs in the interfacial ablation layer, a blister is formed at the location where the interfacial ablation occurred. According to any one of claims 1 to 13,
By curing the interfacial ablation layer entirely or locally by irradiation of active energy rays and locally generating interfacial ablation in the interfacial ablation layer by irradiation of the laser light, A work handling sheet, characterized in that it is used to selectively separate any work piece among a plurality of work pieces held on a surface opposite to the substrate from the interface ablation layer. According to clause 14,
A work handling sheet, characterized in that the work piece is at least one type selected from semiconductor components and semiconductor devices. According to claim 14 or 15,
A work handling sheet, wherein the work piece is a light emitting diode selected from mini light emitting diodes and micro light emitting diodes. A work handling sheet including a substrate and an interfacial ablation layer containing an active energy ray-curable component, a photopolymerization initiator, and an ultraviolet absorber laminated on one side of the substrate, on the surface of the interfacial ablation layer. A preparation process for preparing a laminate formed by holding a plurality of work pieces,
A placement step of arranging the laminate so that surfaces on the work piece side of the laminate face each other with respect to an object capable of holding the work piece,
By irradiating an active energy ray to the entire interfacial ablation layer in the laminate, or to a position in the interfacial ablation layer in the laminate where at least one work piece is attached, , a curing process of curing the interfacial ablation layer overall or locally,
Laser light is irradiated to a position in the interface ablation layer of the laminate where at least one work piece is attached, and interfacial ablation is generated at the irradiated position in the interface ablation layer. A device manufacturing method comprising a separation step of separating the work piece present at a position where the interface ablation occurs from the work handling sheet and placing the work piece on the object. According to clause 17,
A device manufacturing method, characterized in that the separation process is performed after completion of the curing process. According to clause 17,
Manufacturing a device, characterized in that irradiation of the laser light in the separation step also serves as irradiation of the active energy ray in the curing step, and local curing of the interface ablation layer and the interface ablation are performed simultaneously. method. According to any one of claims 17 to 19,
A device manufacturing method, wherein the work piece is at least one type selected from semiconductor components and semiconductor devices. According to any one of claims 17 to 20,
A device manufacturing method characterized by manufacturing a light-emitting device having a plurality of light-emitting diodes by using light-emitting diodes selected from mini light-emitting diodes and micro light-emitting diodes as the work pieces. According to clause 21,
A device manufacturing method, wherein the light-emitting device is a display.