KR20230129372A - Work handling sheets and device manufacturing methods - Google Patents

Abstract

A work handling device comprising a base material 12 and an interface ablation layer 11 that is laminated on one side of the base material 12, is capable of holding the work pieces 2, and performs interface ablation by irradiation of laser light. A work handling sheet (1), wherein the interfacial ablation layer (11) contains an ultraviolet absorber. This work handling sheet can handle even small pieces of fine work satisfactorily.

Description

Work handling sheets and device manufacturing methods

The present invention relates to a work handling sheet that can be used to handle small workpieces such as semiconductor components and semiconductor devices, and a device manufacturing method using the work handling sheet, particularly to micro light emitting diodes, power devices, and MEMS (MEMS). It relates to a work handling sheet that can be used to handle small work pieces such as Micro Electro Mechanical Systems) and a device manufacturing method using the work handling sheet.

In recent years, the development of displays using micro light-emitting diodes is in progress. In the display, each pixel is composed of micro light-emitting diodes, and the light emission of each micro light-emitting diode is independently controlled. In manufacturing the display, it is generally necessary to mount micro light emitting diodes arranged on a supply substrate such as sapphire or glass on a wiring board provided with wiring.

During the above mounting, it is necessary to accurately place the plurality of micro light emitting diodes arranged on the supply board at a predetermined position on the wiring board. At this time, it is necessary to selectively mount a predetermined number of the plurality of micro light emitting diodes on the wiring board, or it is necessary to mount the plurality of micro light emitting diodes simultaneously.

From the viewpoint of performing such mounting satisfactorily, the use of laser light irradiation is being considered. For example, after holding a plurality of micro light emitting diodes on a support with a predetermined layer interposed therebetween, laser light is irradiated to the layer to cause ablation of the layer at the irradiated position, thereby causing the layer to be separated from the support. A method of placing (laser lift-off) micro light emitting diodes on a wiring board is being studied (Patent Document 1). Since the laser light has excellent directivity and convergence, it is easy to control the irradiation position, and selective placement can be performed satisfactorily.

Japanese Patent No. 6546278

However, further miniaturization of micro light-emitting diodes and higher-density packaging of micro light-emitting diodes are also progressing, and in response to these, fine work pieces such as a large number of micro light-emitting diodes are more efficient than conventional methods such as Patent Document 1. A means to deal with is required.

The present invention has been made in view of these actual conditions, and its purpose is to provide a work handling sheet that can favorably handle even fine small work pieces, and a device manufacturing method using the work handling sheet.

In order to achieve the above object, firstly, the present invention provides an interfacial ablation method in which a substrate is laminated on one side of the substrate, capable of holding small work pieces, and performing interface ablation by irradiation of laser light. A work handling sheet having a layer, wherein the interfacial ablation layer contains an ultraviolet absorber (invention 1).

In the work handling sheet according to the above invention (invention 1), the interface ablation layer contains an ultraviolet absorber, so that when irradiated with laser light, the work handling sheet effectively ablates the interface, thereby well separating work pieces toward the object. You can.

In the above invention (invention 1), the ultraviolet absorber is preferably an organic compound (invention 2).

In the above inventions (inventions 1 and 2), the ultraviolet absorber is preferably a compound having one or more heterocycles (invention 3).

In the above inventions (inventions 1 to 3), the ultraviolet absorber has at least one type of carbocycle and heterocycle, and all of the carbocycles and heterocycles that the ultraviolet absorber has are each monocyclic. It is preferable (invention 4).

In the above inventions (inventions 1 to 4), the ultraviolet absorber is preferably a compound having a plurality of aromatic rings (invention 5).

In the above inventions (inventions 1 to 5), the content of the ultraviolet absorber in the interface ablation layer is preferably 1% by mass or more and 75% by mass or less (invention 6).

In the above inventions (inventions 1 to 6), the work handling sheet preferably has an absorbance of 2.0 or more for light with a wavelength of 355 nm (invention 7).

In the above inventions (inventions 1 to 7), the work handling sheet preferably has a light transmittance of 1.0% or less with a wavelength of 355 nm (invention 8).

In the above inventions (inventions 1 to 8), the interfacial ablation layer is preferably an adhesive layer (invention 9).

In the above invention (invention 9), the adhesive constituting the adhesive layer is preferably an acrylic adhesive (invention 10).

In the above inventions (inventions 1 to 10), it is preferable that the laser light has a wavelength in the ultraviolet range (invention 11).

In the above inventions (inventions 1 to 11), when interfacial ablation occurs in the interfacial ablation layer, it is preferable that a blister is formed at the position where the interfacial ablation occurs (invention 12).

In the above inventions (inventions 1 to 12), a plurality of work pieces are held on a surface opposite to the substrate in the interface ablation layer by interfacial ablation locally generated in the interface ablation layer. It is preferable that it is used to selectively separate any work pieces from the interface ablation layer (invention 13).

In the above invention (invention 13), it is preferable that the work pieces are obtained by dividing the work held on the surface opposite to the substrate in the interface ablation layer into pieces on this surface (invention 14).

In the above inventions (inventions 13 and 14), the work piece is preferably at least one type selected from semiconductor components and semiconductor devices (invention 15).

In the above inventions (inventions 13 to 15), the work piece is preferably a light emitting diode selected from mini light emitting diodes and micro light emitting diodes (invention 16).

Secondly, the present invention provides a work handling sheet comprising a base material and an interfacial ablation layer containing an ultraviolet absorber laminated on one side of the base material, and a plurality of work pieces on a surface on the surface of the interfacial ablation layer. A preparation step of preparing a laminate formed by holding small pieces, a placement step of arranging the laminate so that surfaces on the work piece side of the laminate face each other with respect to an object capable of holding the work pieces, By irradiating laser light to the position in the interface ablation layer of the laminate where at least one work piece is attached, interfacial ablation is generated at the irradiated position in the interface ablation layer. A device manufacturing method is provided, comprising a separation step of separating the work piece present at the position where the interface ablation occurs from the work handling sheet and placing the work piece on the object (invention) 17).

In the above invention (invention 17), in the preparation step, it is preferable to obtain the work pieces by dividing the work held on the surface opposite to the substrate in the interface ablation layer into pieces on this surface ( Invention 18).

In the above inventions (inventions 17 and 18), the work piece is preferably at least one type selected from semiconductor components and semiconductor devices (invention 19).

In the above inventions (inventions 17 to 19), it is preferable to use light emitting diodes selected from mini light emitting diodes and micro light emitting diodes as the work pieces to manufacture a light emitting device having a plurality of the light emitting diodes (invention 20). .

In the above invention (invention 20), the light emitting device is preferably a display (invention 21).

The work handling sheet according to the present invention can favorably handle even small pieces of fine work, and according to the device manufacturing method according to the present invention, devices with excellent performance can be manufactured.

1 is a cross-sectional view of a work handling sheet according to one embodiment of the present invention.
Figure 2 is a cross-sectional view illustrating a device manufacturing method using a work handling sheet according to an embodiment of the present invention.
Figure 3 is a cross-sectional view explaining the state of blisters and reaction areas generated by irradiation of laser light.

Hereinafter, embodiments of the present invention will be described.

1 shows a cross-sectional view of a work handling sheet according to one embodiment. The work handling sheet 1 shown in FIG. 1 includes a base material 12 and an interface ablation layer 11 laminated on one side of the base material 12.

In the work handling sheet 1 according to this embodiment, the interface ablation layer 11 is capable of holding small work pieces. That is, the work handling sheet 1 according to the present embodiment can maintain the work pieces laminated on the surface of the interface ablation layer 11 opposite to the substrate 12 in that state.

Although the specific mode of the above holding is not limited, a preferred example is holding the interfacial ablation layer 11 by exerting adhesion to the work piece. In this case, as will be described later, the interfacial ablation layer 11 preferably contains an adhesive as one of its constituent components, that is, is an adhesive layer.

Additionally, the interface ablation layer 11 in this embodiment is subjected to interface ablation by irradiation of laser light. That is, the interface ablation layer 11 performs local interface ablation in the area irradiated with the laser light. Moreover, the laser light is not particularly limited as long as it is capable of generating interface ablation, and may be any laser light having a wavelength in the ultraviolet range, visible light range, and infrared range. Among these, laser light having a wavelength in the ultraviolet range may be used. This is desirable.

In this specification, interfacial ablation refers to evaporation or volatilization of a portion of the components constituting the interface ablation layer 11 by the energy of the laser light, and the resulting gas is generated between the interface ablation layer 11 and the substrate 12. ) refers to the formation of voids (blisters) at the interface. In this case, the shape of the interface ablation layer 11 changes due to blisters, and the small work pieces peel off from the interface ablation layer 11, causing the small work pieces to separate.

And the interface ablation layer 11 in this embodiment contains an ultraviolet absorber. The presence of an ultraviolet absorber in the interfacial ablation layer 11 improves the efficiency of the interfacial ablation layer 11 in receiving energy from laser light. As a result, interfacial ablation occurs effectively, and it becomes possible to properly separate the retained work pieces from the interfacial ablation layer 11. In particular, the amount of laser light irradiation required to produce sufficient separation of work pieces is reduced, thereby reducing the operating cost of the laser light irradiation device, and making it easier to separate only the targeted work pieces well, improving precision. Moreover, damage to devices, etc. due to excessive laser light irradiation can be prevented.

1. Interfacial ablation layer

The specific structure and composition of the interfacial ablation layer 11 in this embodiment is as long as it is capable of holding small work pieces and has the property of interfacial ablation by irradiation of laser light, and also contains an ultraviolet absorber. , is not particularly limited.

From the viewpoint of easily exhibiting the property of being able to maintain small work pieces, it is preferable that the interfacial ablation layer 11 contains an adhesive as one of the components constituting it, as described above. When the interfacial ablation layer 11 contains an adhesive, it is preferable that the interfacial ablation layer 11 is made of an adhesive composition containing an ultraviolet absorber.

(1) UV absorber

The type of ultraviolet absorber in this embodiment is not particularly limited. The ultraviolet absorber in this embodiment may be an organic compound or an inorganic compound, but it is preferable that it is an organic compound from the viewpoint of being easy to generate good interfacial ablation.

When the ultraviolet absorber is an organic compound, preferred examples of the ultraviolet absorber include hydroxyphenyltriazine-based ultraviolet absorbers, benzophenone-based ultraviolet absorbers, benzotriazole-based ultraviolet absorbers, benzoate-based ultraviolet absorbers, benzoxazinone-based ultraviolet absorbers, and phenyl salicylate. Compounds such as silate-based ultraviolet absorbers, cyanoacrylate-based ultraviolet absorbers, nickel complex ultraviolet absorbers, hydroquinone-based ultraviolet absorbers, salicylic acid-based ultraviolet absorbers, malonic acid ester-based ultraviolet absorbers, and oxalic acid-based ultraviolet absorbers are included. These may be used individually or in combination of two or more types.

Among the above-mentioned ultraviolet absorbers, hydroxyphenyltriazine-based ultraviolet absorbers, benzophenone-based ultraviolet absorbers, and It is preferable to use at least one type of benzotriazole-based ultraviolet absorber, and it is especially preferable to use a hydroxyphenyltriazine-based ultraviolet absorber.

As the hydroxyphenyltriazine-based ultraviolet absorber, 2-[4-(octyl-2-methylethanoate)oxy-2-hydroxyphenyl]-4,6-[bis(2,4-dimethylphenyl)]- 1,3,5-triazine, 2-[4-(2-hydroxy-3-dodecyloxy-propyl)oxy-2-hydroxyphenyl]-4,6-[bis(2,4-dimethylphenyl) )-1,3,5-triazine, 2-[4-(2-hydroxy-3-tridecyloxy-propyl)oxy-2-hydroxyphenyl]-4,6-[bis(2,4 -Dimethylphenyl)-1,3,5-triazine, 2-(2,4-dihydroxyphenyl)-4,6-bis-(2,4-dimethylphenyl)-1,3,5-triazine , 2-[4-(2-hydroxy-3-(2'-ethyl)hexyloxy]-2-hydroxyphenyl]-4,6-[bis(2,4-dimethylphenyl)-1,3 ,5-triazine, 2,4-bis[2-hydroxy-4-butoxyphenyl]-6-(2,4-dibutoxyphenyl)-1,3,5-triazine, 2-(2- Hydroxy-4-[1-octyloxycarbonylethoxy]phenyl)-4,6-bis(4-phenylphenyl)-1,3,5-triazine, tris[2,4,6-[2- {4-(octyl-2-methylethanoate)oxy-2-hydroxyphenyl}]-1,3,5-triazine, etc. These may be used individually or in combination of two types. The above may be used in combination. Among these, tris[2,4,6-[2-{4-(octyl-2-methylethanoate)oxy-2-hydroxyphenyl}]-1,3,5 -At least one of triazine and 2-(2-hydroxy-4-[1-octyloxycarbonylethoxy]phenyl)-4,6-bis(4-phenylphenyl)-1,3,5-triazine It is desirable to use .

In addition, when the ultraviolet absorber is an organic compound, the ultraviolet absorber is preferably a compound having one or more heterocycles as a characteristic of its chemical structure. In this case, it is preferable that the number of heterocycles is 4 or less, and it is especially preferable that it is 1.

In addition, as another feature of the chemical structure, the ultraviolet absorber in the present embodiment preferably has at least one type of carbocycle and heterocycle, and all carbocycles and heterocycles of the ultraviolet absorber are each monocyclic. .

As an additional feature of the chemical structure, it is preferable that the ultraviolet absorber in this embodiment is a compound having a plurality of aromatic rings. In this case, it is preferable that the number of aromatic rings is two or more. Moreover, it is preferable that the number of aromatic rings is 6 or less, and it is especially preferable that it is 3 or less.

In terms of the above-mentioned chemical structural characteristics, each heterocycle preferably has at least one element selected from nitrogen, oxygen, phosphorus, sulfur, silicon, and selenium as an element other than carbon constituting them, especially nitrogen. , it is preferable to have at least one selected from oxygen, phosphorus, and sulfur. Additionally, the number of atoms constituting the heterocyclic ring structure is not particularly limited, and for example, it is preferably 3 to 9, and especially preferably 5 to 6. Specific examples of preferable heterocycles include triazine, benzotriazole, thiophene, pyrrole, imidazole, pyridine, and pyrazine.

In addition, in terms of the above-mentioned chemical structural characteristics, preferred examples of aromatic rings include benzene, naphthalene, anthracene, biphenyl, triphenyl, and the like.

Examples of ultraviolet absorbers having the above-mentioned chemical structural characteristics include ultraviolet absorbers having the structure of the following formula (1) (tris[2,4,6-[2-{4-(octyl-2-methylethanoate) Oxy-2-hydroxyphenyl}]-1,3,5-triazine) can be mentioned.

[Tuesday 1]

The content of the ultraviolet absorber in the interface ablation layer 11 in the present embodiment is preferably 1% by mass or more, more preferably 2% by mass or more, especially preferably 3% by mass or more, and even more preferably 5% by mass. It is preferable that it is % or more. When the content of the ultraviolet absorber is 1% by mass or more, the interfacial ablation layer 11 absorbs the laser light efficiently, thereby making it easy to perform good interfacial ablation. In addition, the content of the ultraviolet absorber in the interface ablation layer 11 in the present embodiment is preferably 75% by mass or less, more preferably 60% by mass or less, and especially preferably 50% by mass or less. It is preferable that it is 20 mass % or less. When the ultraviolet absorber content is 75% by mass or less, the viscosity of the material for forming the interface ablation layer 11 becomes appropriate, and it becomes easy to ensure good film forming properties.

Additionally, when the interface ablation layer 11 in this embodiment is formed from the adhesive composition described later, an ultraviolet absorber may be blended in this adhesive composition. In that case, the blending amount of the ultraviolet absorber in the adhesive composition is preferably 1% by mass or more, more preferably 2% by mass or more, especially preferably 3% by mass or more, and more preferably 5% by mass or more. When the blending amount of the ultraviolet absorber is 1% by mass or more, the interfacial ablation layer 11 absorbs the laser light efficiently, thereby making it easy to perform interfacial ablation favorably. In addition, the amount of ultraviolet absorber in the adhesive composition is preferably 75% by mass or less, more preferably 60% by mass or less, especially 50% by mass or less, and more preferably 20% by mass or less. When the blending amount of the ultraviolet absorber is 75% by mass or less, the resulting adhesive easily exhibits the desired adhesive strength.

(2) Adhesive

As described above, the interfacial ablation layer 11 in this embodiment may contain an adhesive in addition to the ultraviolet absorber. In this case, the interfacial ablation layer 11 is preferably formed of an adhesive composition containing an ultraviolet absorber.

The adhesive is not particularly limited as long as it can exhibit sufficient holding power (adhesive force) to adherends such as work pieces. Examples of the adhesive include acrylic adhesive, rubber adhesive, silicone adhesive, urethane adhesive, polyester adhesive, and polyvinyl ether adhesive. Among these, it is preferable to use an acrylic adhesive from the viewpoint of being easy to achieve the desired adhesive strength.

Examples of the acrylic adhesive include an acrylic adhesive that uses an acrylic polymer (A) as a base polymer. The weight average molecular weight (Mw) of the acrylic polymer (A) is preferably 10,000 or more, and particularly preferably 100,000 or more. Moreover, the weight average molecular weight (Mw) is preferably 2 million or less, and particularly more preferably 1.5 million or less. When the weight average molecular weight of the acrylic polymer (A) is 10,000 or more, it becomes easy to increase the cohesion of the resulting adhesive strength and to easily suppress the adhesive remaining on the separated work pieces. Additionally, when the weight average molecular weight is 2 million or less, it becomes easy to obtain a stable interfacial ablation layer coating. In addition, the weight average molecular weight (Mw) in this specification is a standard polystyrene conversion value measured by gel permeation chromatography (GPC method).

Moreover, the glass transition temperature (Tg) of the acrylic polymer (A) is preferably -70°C or higher, and particularly preferably -60°C or higher. Additionally, the glass transition temperature (Tg) is preferably 20°C or lower, and particularly preferably 10°C or lower. When the glass transition temperature (Tg) of the acrylic polymer (A) is within the above range, it becomes easy to achieve the desired adhesive force while achieving the desired cohesive force.

The acrylic polymer (A) preferably contains at least a (meth)acrylic acid ester monomer as a constituent monomer, and also contains a functional group capable of reacting with the functional group of the crosslinking agent (B) described later (hereinafter referred to as “reactive functional group”). It is desirable to have (also called).

As the (meth)acrylic acid ester monomer, specifically, methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, pentyl (meth)acrylate, 2- Ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, Alkyl (meth)acrylates in which the alkyl group has 1 to 18 carbon atoms, such as uryl (meth)acrylate; Cycloalkyl (meth)acrylate, benzyl (meth)acrylate, isobornyl (meth)acrylate, dicyclofentanyl (meth)acrylate, and dicyclopentenyl (meth), where the cycloalkyl group has 1 to 18 carbon atoms. (meth)acrylates having a cyclic skeleton such as acrylate, dicyclopentenyloxyethyl (meth)acrylate, and imide (meth)acrylate; Hydroxyl group-containing (meth)acrylates such as hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, and 2-hydroxypropyl (meth)acrylate; Glycidyl (meth)acrylate, β-methylglycidyl (meth)acrylate, (3,4-epoxycyclohexyl)methyl (meth)acrylate, 3-epoxycyclo-2-hydroxypropyl (meth) Epoxy group-containing (meth)acrylates such as acrylates can be mentioned.

Additionally, monomers other than (meth)acrylic acid ester monomers such as acrylic acid, methacrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-methylol acrylamide may be copolymerized. These may be used individually, or two or more types may be used together.

By containing a reactive functional group, the acrylic polymer (A) reacts with the functional group of the crosslinking agent (B) described later to form a three-dimensional network structure, making it easy to increase the cohesion of the interfacial ablation layer. The reactive functional group of the acrylic polymer (A) includes a carboxyl group, an amino group, an epoxy group, and a hydroxyl group. As will be described later, it is easy to selectively react with an organic polyvalent isocyanate compound that is preferably used as a crosslinking agent, so it contains a hydroxyl group. desirable.

The reactive functional group can be introduced into the acrylic polymer (A) by configuring the acrylic polymer (A) using a monomer having a reactive functional group such as the above-mentioned hydroxyl group-containing (meth)acrylate or acrylic acid.

The proportion of monomers having a reactive functional group (hereinafter also referred to as reactive group-containing monomers) in the total monomers of the acrylic polymer (A) is preferably 0.3% by mass or more, and particularly preferably 0.5% by mass or more. Moreover, it is preferable that the said ratio is 40 mass % or less, and it is especially preferable that it is 20 mass % or less. By containing the reactive group-containing monomer in this range, it becomes easy to achieve the desired adhesive force while achieving the desired cohesive force.

In addition, the acrylic polymer (A) preferably contains the above-described alkyl (meth)acrylate as a constituent monomer, more preferably an alkyl (meth)acrylate whose alkyl group has 1 to 10 carbon atoms, especially preferably It is preferable that the alkyl group contains an alkyl (meth)acrylate having 4 to 8 carbon atoms. When the acrylic polymer (A) contains the above-described alkyl (meth)acrylate, the proportion of the alkyl (meth)acrylate in the total monomers of the acrylic polymer (A) is preferably 30% by mass or more, especially 35% by mass. It is preferable that it is % or more. Moreover, it is preferable that the said ratio is 99 mass % or less, and it is especially preferable that it is 95 mass % or less. By containing the alkyl (meth)acrylate in this range, it becomes easy to achieve the desired adhesive force while achieving the desired cohesive force.

The use of a cross-linking agent (B) is preferable from the viewpoint that it is easy to adjust the storage elastic modulus of the interfacial ablation layer 11 to a desired range. As the crosslinking agent (B), a polyfunctional compound that has reactivity with the reactive functional group of the acrylic polymer (A) or the like can be used. Examples of such multifunctional compounds include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, aziridine compounds, hydrazine compounds, aldehyde compounds, oxazoline compounds, metal alkoxide compounds, metal chelate compounds, metal salts, ammonium salts, reactive phenol resins, etc. can be mentioned.

The compounding amount of the crosslinking agent (B) is preferably 0.001 parts by mass or more, particularly preferably 0.1 parts by mass or more, and more preferably 0.2 parts by mass or more, based on 100 parts by mass of the acrylic polymer (A). Moreover, the compounding amount of the crosslinking agent (B) is preferably 20 parts by mass or less, particularly preferably 10 parts by mass or less, and more preferably 5 parts by mass or less, with respect to 100 parts by mass of the acrylic polymer (A).

Additionally, the adhesive constituting the interfacial ablation layer 11 may be an adhesive having active energy ray curability. As such an active energy ray-curable adhesive, a known one can be used, for example, one disclosed in International Publication No. 2018/084021 can be used.

In addition to the above-mentioned components, other additives may be added to the adhesive composition for forming the interfacial ablation layer 11. Examples of the additives include tackifiers, coloring materials such as dyes and pigments, flame retardants, fillers, and antistatic agents. In addition, the adhesive composition preferably does not contain a gas generating agent from the viewpoint of easily causing separation of work pieces. When a gas generating agent is used, gas may be generated throughout the interface ablation layer 11. In that case, there are cases where interface ablation occurs only at the intended location, making it difficult to separate only the small work pieces located there, making it difficult to separate the small work pieces satisfactorily.

(3) Thickness of interfacial ablation layer

The thickness of the interface ablation layer 11 in this embodiment is preferably 3 μm or more, particularly preferably 20 μm or more, and more preferably 25 μm or more. Additionally, the thickness of the interface ablation layer 11 is preferably 100 μm or less, especially 50 μm or less, and more preferably 40 μm or less. When the thickness of the interface ablation layer 11 is within the above range, it is easy to achieve both maintenance of the small work pieces on the interface ablation layer 11 and separation of the work pieces by the interface ablation.

2. Description

The base material 12 in this embodiment is not particularly limited in terms of its composition or physical properties. From the viewpoint that the work handling sheet 1 can easily exhibit the desired function, the base material 12 is preferably made of resin. When the base material 12 is made of resin, examples of the resin include polyester resins such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; Polyolefin resins such as polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, ethylene-norbornene copolymer, and norbornene resin; ethylene-vinyl acetate copolymer; Ethylene-based copolymer resins such as ethylene-(meth)acrylic acid copolymer, ethylene-methyl (meth)acrylate copolymer, and other ethylene-(meth)acrylic acid ester copolymers; Polyvinyl chloride-based resins such as polyvinyl chloride and vinyl chloride copolymer; (meth)acrylic acid ester copolymer; Polyurethane; polyimide; polystyrene; polycarbonate; Fluororesin, etc. can be mentioned. In addition, the resin constituting the base material 12 may be a crosslinked product of the above-mentioned resin or a modified product such as an ionomer of the above-mentioned resin. In addition, the base material 12 may be a single-layer film made of the above-mentioned resin, or may be a laminated film in which a plurality of the above films are laminated. In this laminated film, the materials constituting each layer may be of the same type or may be of different types.

The surface of the substrate 12 in this embodiment may be subjected to surface treatment using an oxidation method, a roughening method, or a primer treatment for the purpose of improving adhesion to the interface ablation layer 11. Examples of the oxidation method include corona discharge treatment, plasma discharge treatment, chromium oxidation treatment (wet process), flame treatment, hot air treatment, ozone, and ultraviolet irradiation treatment, and examples of the roughening method include sand blasting. Examples include methods of spraying and spraying.

The base material 12 in this embodiment may contain various additives such as colorants, flame retardants, plasticizers, antistatic agents, lubricants, and fillers. Additionally, when the interfacial ablation layer 11 contains a material that is cured by active energy rays, the substrate 12 preferably has transparency to active energy rays.

The manufacturing method of the base material 12 in this embodiment is not particularly limited as long as the base material 12 is manufactured from resin. For example, melt extrusion methods such as the T die method and the ring die method; calendar method; It can be manufactured by molding the resin into a sheet shape using a solution method such as a dry method or a wet method.

The thickness of the base material 12 in this embodiment is preferably 10 μm or more, particularly preferably 30 μm or more, and more preferably 50 μm or more. Additionally, the thickness of the substrate 12 is preferably 500 μm or less, more preferably 300 μm or less, particularly preferably 200 μm or less, further preferably 150 μm or less, and most preferably 100 μm or less. When the thickness of the base material 12 is within the above range, the work handling sheet 1 has a predetermined balance of rigidity and flexibility, making it easy to handle small work pieces well.

3. Release sheet

In the present embodiment, when the interfacial ablation layer 11 contains an adhesive as one of its constituent components, the surface of the interfacial ablation layer 11 opposite to the substrate 12 is attached to a small work piece. For the purpose of protecting the surface during this period, a release sheet may be laminated on the surface.

The configuration of the release sheet is arbitrary, and an example is one in which a plastic film has been subjected to a release treatment using a release agent or the like. Specific examples of the plastic film include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and polyolefin films such as polypropylene and polyethylene. As the release agent, silicone-based, fluorine-based, long-chain alkyl-based, etc. can be used, and among these, silicone-based is preferable because it is inexpensive and provides stable performance.

There is no particular limitation on the thickness of the release sheet, and for example, it may be 20 μm or more and 250 μm or less.

4. Other configurations

In the work handling sheet 1 according to the present embodiment, an adhesive layer may be laminated on the surface of the interface ablation layer 11 opposite to the substrate 12. In the above sheet, a work is attached to the side of the adhesive layer opposite to the interface ablation layer 11, and the adhesive layer is diced together with the work to obtain small work pieces in which the separated adhesive layers are laminated. You can. The chip can be easily fixed to the object on which the work piece is mounted by this separate adhesive layer. As the material constituting the above-mentioned adhesive layer, it is preferable to use a material containing a thermoplastic resin and a low molecular weight thermosetting adhesive component, or a material containing a B stage (semi-cured burn) thermosetting adhesive component.

Additionally, in the work handling sheet 1 according to the present embodiment, a protective film forming layer may be laminated on the surface of the interface ablation layer 11 opposite to the substrate 12. In such a sheet, a work is attached to the surface of the protective film forming layer opposite to the interface ablation layer 11, and the protective film forming layer is diced together with the work to obtain small work pieces in which the separate protective film forming layers are laminated. You can. As the work, it is preferable to use one on which a circuit is formed on one side, and in this case, a protective film forming layer is usually laminated on the side opposite to the side on which the circuit is formed. By curing the separated protective film forming layer at a predetermined timing, a protective film with sufficient durability can be formed on a small piece of work. The protective film forming layer is preferably made of an uncured curable adhesive.

5. Physical properties of work handling sheets

The work handling sheet according to the present embodiment preferably has an absorbance of light with a wavelength of 355 nm of 2.0 or more, more preferably 2.5 or more, especially preferably 3.0 or more, and even more preferably 3.5 or more. By having an absorbance of 2.0 or more for light with a wavelength of 355 nm, it is possible to reduce the amount of light in the ultraviolet range that reaches the small work pieces when irradiated with laser light, thereby effectively suppressing damage to the surface of the small work pieces and separating the small work pieces. It becomes possible to do Additionally, the upper limit of the absorbance is not particularly limited, and may be, for example, 6.0 or less. In addition, details of the method for measuring the absorbance are as described in the test examples described later.

The work handling sheet according to the present embodiment preferably has a light transmittance of 1.0% or less with a wavelength of 355 nm, more preferably 0.5% or less, particularly preferably 0.3% or less, and more preferably 0.1% or less. . By having a light transmittance of 0.3% or less with a wavelength of 355 nm, it is possible to reduce the amount of ultraviolet rays reaching the small work piece when irradiated with laser light, effectively suppressing damage to the surface of the small work piece while effectively suppressing damage to the small work piece piece. It becomes possible to perform separation. Additionally, the lower limit of the transmittance is not particularly limited, and may be, for example, 0.00001% or more, and especially 0.0001% or more. In addition, details of the method for measuring the transmittance are as described in the test examples described later.

In the work handling sheet according to this embodiment, the adhesive force to the mirror surface of the silicon wafer is preferably 10 mN/25 mm or more, particularly preferably 100 mN/25 mm or more, and more preferably 200 mN/25 mm or more. When the adhesive force is 90 mN/25 mm or more, it becomes easy to secure adherends such as small work pieces to the work handling sheet, resulting in better handling properties. Additionally, the adhesive force is preferably 30,000 mN/25 mm or less, especially 15,000 mN/25 mm or less, and more preferably 10,000 mN/25 mm or less. When the adhesive force is 30000 mN/25 mm or less, it becomes easier to separate work pieces by irradiating laser light more effectively.

6. Manufacturing method of work handling sheet

The manufacturing method of the work handling sheet 1 according to this embodiment is not particularly limited. For example, the interfacial ablation layer 11 may be formed directly on the substrate 12, or the interfacial ablation layer 11 may be formed on a process sheet and then the interfacial ablation layer 11 may be applied to the substrate. (12) You may transcribe it on your page.

When the interfacial ablation layer 11 contains an adhesive as one of its constituent components, the interfacial ablation layer 11 can be formed by a known method. For example, an adhesive composition for forming the interfacial ablation layer 11 and a coating liquid further containing a solvent or dispersion medium as desired are prepared. Then, the above-mentioned coating liquid is applied to one side of the substrate or the releasable side of the release sheet (hereinafter sometimes referred to as “release surface”). Subsequently, the interfacial ablation layer 11 can be formed by drying the obtained coating film.

Application of the above-mentioned coating liquid can be performed by a known method, for example, a bar coating method, a knife coating method, a roll coating method, a blade coating method, a die coating method, or a gravure coating method. In addition, the properties of the coating liquid are not particularly limited as long as it can be applied. In some cases, it contains a component for forming the interface ablation layer 11 as a solute or as a dispersoid. There is also. In addition, when the interfacial ablation layer 11 is formed on the release sheet, the release sheet may be peeled off as a process material, and may protect the interface ablation layer 11 until it is attached to the adherend. good night.

When the adhesive composition for forming the interfacial ablation layer 11 contains the above-mentioned crosslinking agent, the polymer component in the coating film is removed by changing the drying conditions (temperature, time, etc.) described above or by separately providing heat treatment. It is preferable to proceed with the crosslinking reaction between the crosslinking agent and the crosslinking agent to form a crosslinked structure at a desired density within the interfacial ablation layer 11. In addition, in order to sufficiently advance the above-mentioned crosslinking reaction, after completion of the work handling sheet 1, curing may be performed, for example, by leaving it to stand in an environment of 23° C. and 50% relative humidity for several days.

7. How to use the work handling sheet

The work handling sheet 1 according to this embodiment can be suitably used for handling small work pieces. As described above, in the work handling sheet 1 according to the present embodiment, the interface ablation layer 11 is one that efficiently performs interface ablation by irradiation of laser light, so that the interface ablation layer 11 is The held work pieces can be separated toward a predetermined position with high precision.

As an example of a method of using the work handling sheet 1 according to the present embodiment, the substrate 12 in the interface ablation layer 11 is removed by interfacial ablation locally generated in the interface ablation layer 11. One possible use method is to selectively separate any work piece from the plurality of work pieces held on the opposite side from the interface ablation layer 11.

In the above usage method, the plurality of work pieces held on the interface ablation layer 11 are works held on the surface opposite to the substrate 12 in the interface ablation layer 11 (material of the work pieces). It may be obtained by reorganizing (which becomes ) into pieces on the above surface. That is, the work pieces may be obtained by dicing the work on the interface ablation layer 11. Alternatively, the work piece may be formed independently from the work handling sheet 1 according to the present embodiment and placed on the interface ablation layer 11.

Additionally, when the work handling sheet 1 according to the present embodiment is provided with the adhesive layer or protective film forming layer described above, it is preferable to dice these layers and the work on the interface ablation layer 11. Accordingly, it is possible to obtain small workpieces in which these layers are separated and laminated.

There is no particular limitation on the shape or size of the small work piece in the present embodiment, but with regard to size, the small work piece preferably has an area of 10 ㎛ ² or more when viewed in plan view, and especially 100 ㎛ ² or more. It is desirable. Additionally, the area of the small work piece when viewed in plan view is preferably 1 mm2 or less, and especially preferably 0.25 mm2 or less. Additionally, as for the size of the work piece, when the work piece is rectangular, the smallest side of the work piece is preferably 2 μm or more, particularly preferably 5 μm or more, and more preferably 10 μm or more. In addition, the minimum one side is preferably 1 mm or less, and particularly preferably 0.5 mm or less. Specific examples of the dimensions of the small rectangular work pieces include 2 μm × 5 μm, 10 μm × 10 μm, 0.5 mm × 0.5 mm, and 1 mm × 1 mm. The work handling sheet 1 according to the present embodiment can favorably handle such fine work pieces, especially fine work pieces that are difficult to separate from the sheet by pushing up the needle. On the other hand, the work handling sheet 1 according to the present embodiment has an area exceeding 1 mm2 (for example, 1 mm2 to 2000 mm2) or a thickness of 1 to 10000 μm (for example, 10000 μm). Even small workpieces of relatively large sizes (~1000㎛) can be handled well.

Small work pieces include semiconductor components and semiconductor devices, and more specifically, micro light emitting diodes, power devices, and MEMS (Micro Electro Mechanical Systems). Among these, the work piece is preferably a light emitting diode, and is particularly preferably a light emitting diode selected from mini light emitting diodes and micro light emitting diodes. In recent years, the development of devices in which mini light-emitting diodes and micro light-emitting diodes are arranged at high density have been studied, and in the manufacture of such devices, a work handling sheet (1) according to this embodiment that can handle these light-emitting diodes with high precision is used. ) is very suitable.

Below, as a specific example of use of the work handling sheet 1, a device manufacturing method will be explained based on FIG. 2. The device manufacturing method includes at least three processes: a preparation process ((a) in Figure 2), a batch process ((b) in Figure 2), and a separation process ((c) and (d) in Figure 2). do.

In the preparation process, as shown in Figure 2 (a), a plurality of work pieces 2 are held on the surface of the work handling sheet 1 according to the present embodiment on the side of the interface ablation layer 12. Prepare a laminate consisting of The laminate may be prepared by placing separately manufactured work pieces 2 on the work handling sheet 1, or the work held on the surface on the interface ablation layer 11 side may be reorganized on this surface. You can prepare it by mashing it (i.e. dicing it). The dicing can be performed by a known method.

As described above, the shape and size of the work piece 2 are not particularly limited, and the preferred size is also as described above. Specific examples of the small work piece 2 include semiconductor components and semiconductor devices, as described above, and in particular, light emitting diodes such as mini light emitting diodes and micro light emitting diodes.

In the subsequent arrangement process, as shown in (b) of FIG. 2, the work pieces 2 are stacked so that the surfaces of the work pieces 2 in the laminate face each other with respect to the object 3 that can accommodate the work pieces 2. Place the sieve. Examples of the object 3 are appropriately determined depending on the device to be manufactured, but when the work piece 2 is a light emitting diode, specific examples of the object 3 include a board, sheet, reel, etc., especially wiring. This provided wiring board is preferably used.

Thereafter, in the separation process, as shown in FIG. 2(c), the position where at least one work piece 2 is attached in the interfacial ablation layer 11 of the laminate is as follows: Irradiate laser light. The above irradiation may be performed simultaneously on a plurality of positions where the work piece 2 is attached, or may be performed sequentially on these positions. The conditions for irradiation of the laser light are not limited as long as it is possible to generate interfacial ablation. As a device for irradiation, a known device can be used.

By the above irradiation, as shown in FIG. 2(d), interface ablation can be generated at the irradiated position in the interface ablation layer 11. Specifically, by irradiation of the laser light, the components constituting the region are evaporated or volatilized in the region proximal to the substrate 12 in the interface ablation layer 11, forming a reaction region 13. ) becomes. Then, the gas generated by the evaporation or volatilization collects between the substrate 11 and the reaction region 13, forming a blister 5. By forming the blister 5, the interface ablation layer 11 is locally deformed at the position of the work piece 2', and the work piece 2' is peeled off from the interface ablation layer 11. Separate this. As a result of the above, the work piece 2' existing at the position where the interface ablation occurred can be placed on the object 3.

Additionally, the reaction area 13 and blisters 5 generated by irradiation of the laser light usually remain even after the work pieces 2' are separated. Figure 3 shows the separation of work pieces 2 by sequential irradiation of laser light, particularly the state after separation (two pieces on the left), the state during separation (center), and the state before separation (two pieces on the right). dog) appears. As shown, the blister 5 after separation is usually in a slightly collapsed state compared to the blister 5 during separation.

When the interfacial ablation layer 11 contains an active energy ray-curable adhesive as one of its constituent components, the interfacial ablation layer 11 may be cured by irradiation of the above-described laser light. Furthermore, due to the above curing, the adhesion of the interfacial ablation layer 11 to the work pieces 2 is reduced, and in conjunction with the effect of the interface ablation described above, good separation of the work pieces 2' occurs. It's okay to be Alternatively, the interface ablation layer 11 may be irradiated with active energy rays, which is different from the irradiation of the laser light described above, thereby reducing the adhesion to the work piece 2. This active energy ray irradiation may be performed either before or after irradiation of the laser light. Additionally, the active energy ray irradiation may be performed locally on the interface ablation layer 11, or may be applied on the entire surface of the interface ablation layer 11. The irradiation conditions and irradiation device for the above-described active energy ray irradiation are not particularly limited, and known conditions and known devices can be used.

The device manufacturing method described above may include processes other than the preparation process, batch process, and separation process. For example, grinding, die bonding, wire bonding, molding, inspection, transfer processes, etc. may be performed at any timing between the preparation process and the separation process.

According to the device manufacturing method described above, various devices can be manufactured by appropriately selecting the work piece 2 or object 3 to be used. For example, when a light emitting diode selected from mini light emitting diodes and micro light emitting diodes is used as the work piece 2, a light emitting device having a plurality of such light emitting diodes can be manufactured, and more specifically, a display can be manufactured. can do. In particular, a display including micro light-emitting diodes as pixels or a display including a plurality of mini light-emitting diodes as backlights can be manufactured.

The embodiments described above are described to facilitate understanding of the present invention and are not intended to limit the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents that fall within the technical scope of the present invention.

For example, between the interface ablation layer 11 and the substrate 12 in the work handling sheet 1 according to the present embodiment, or on the side opposite to the interface ablation layer 11 of the substrate 12. Other layers may be laminated on the surface. Specific examples of the other layers include an adhesive layer. In this case, the above-mentioned separation process, etc. can be performed with the surface on the adhesive layer side affixed to a support (transparent substrate such as a glass plate).

The adhesive constituting the adhesive layer is not particularly limited, but is preferably one that is difficult to absorb active energy rays and difficult to block active energy rays. In this case, when laser light is irradiated through the adhesive layer, the laser light easily reaches the interface ablation layer 11, making it easy to generate good interface ablation. Specifically, as the adhesive constituting the adhesive layer, it is preferable to use an adhesive that does not have active energy ray curing properties, and it is especially preferable to use an adhesive that does not contain an active energy ray curing component. By using an adhesive that does not have active energy ray curing properties, the adhesive layer does not harden even when irradiated with the laser light, thereby preventing unintentional peeling of the work handling sheet 1 from the transparent substrate. It becomes possible. The thickness of the adhesive layer is not particularly limited, but is preferably 5 to 50 μm, for example.

Example

Hereinafter, the present invention will be described in more detail through examples, etc., but the scope of the present invention is not limited to these examples.

[Example 1]

(1) Preparation of adhesive composition

80 parts by mass of 2-ethylhexyl acrylate and 20 parts by mass of 2-hydroxyethyl acrylate were polymerized by solution polymerization to obtain an acrylic polymer. The weight average molecular weight (Mw) of this acrylic polymer was measured by the method described later and was found to be 600,000.

100 parts by mass of the acrylic polymer obtained above (in terms of solid content, the same below), 0.94 parts by mass of trimethylolpropane-modified tolylene diisocyanate (manufactured by TOSOH CORPORATION, brand name "Colonate L") as a crosslinking agent, and Tris [2, 4,6-[2-{4-(octyl-2-methylethanoate)oxy-2-hydroxyphenyl}]-1,3,5-triazine (hydroxyphenyltriazine UV absorber, manufactured by BASF Corporation) , product name “Tinuvin477”) were mixed in a solvent to obtain a coating liquid of the adhesive composition.

(2) Formation of an interfacial ablation layer (adhesive layer)

Applying the adhesive composition obtained in the above step (1) to the peeling surface of a release sheet (manufactured by LINTEC Corporation, product name “SP-PET381031”), which is formed on one side of a polyethylene terephthalate film with a thickness of 38 μm and a silicone-based release agent layer is formed. The liquid was applied, and the obtained coating film was dried by heating. As a result, a laminate was obtained by laminating a 30-μm-thick interfacial ablation layer formed by drying the coating film and a release sheet.

(3) Production of work handling sheets

By bonding the surface on the interface ablation layer side of the laminate obtained in the above step (2) with one side of a polyethylene terephthalate film (manufactured by Mitsubishi Chemical Corporation, product name "T-910 WM19", thickness: 50 μm) as a substrate. , a work handling sheet with a release sheet attached thereto was obtained.

Here, the weight average molecular weight (Mw) described above is the weight average molecular weight in terms of standard polystyrene measured (GPC measurement) using gel permeation chromatography (GPC) under the following conditions.

<Measurement conditions>

·Measurement device: manufactured by TOSOH CORPORATION, HLC-8320

·GPC column (passed in the following order): manufactured by TOSOH CORPORATION

TSK gel superH-H

TSK gel superHM-H

TSK gel superH2000

·Measurement solvent: tetrahydrofuran

·Measurement temperature: 40℃

[Examples 2 to 14 and Comparative Examples 1 to 2]

A work handling sheet was manufactured in the same manner as in Example 1, except that the content of the crosslinking agent and the type and content of the ultraviolet absorber were changed as shown in Table 1.

[Example 15]

As a base material, a resin composition containing an ethylene-methacrylic acid copolymer (manufactured by Dow-Mitsui Polychemicals Company, Ltd., product name "Nucrel NH903C") was extruded using a small T-die extruder (manufactured by Toyo Seiki Seisaku-sho, Ltd., product name). The same procedure as in Example 1 was used, except that an 80-μm-thick substrate (polyolefin-based substrate) obtained by extrusion molding using "Laboplastomyl" was used and the content of the ultraviolet absorber was changed as shown in Table 1. Manufactured work handling sheets.

[Test Example 1] (Evaluation of Laser Lift-Off Aptitude)

(1) Preparation of chips on the work handling sheet (preparation process)

(1-1) Examples 1 to 13 and 15 and Comparative Examples 1 to 2

The adhesive side of a dicing sheet (manufactured by LINTEC Corporation, product name “D-485H”) was attached to one side of a silicon wafer (#2000, thickness: 350 μm). Subsequently, a ring frame for dicing was attached to the peripheral portion of the adhesive surface of the dicing sheet (a position that does not overlap with the silicon wafer). Additionally, the dicing sheet was cut to match the outer diameter of the ring frame. Thereafter, the silicon wafer was diced into chips having a size of 300 µm x 300 µm using a dicing device (manufactured by DISCO CORPORATION, product name “DFD6362”). After that, the dicing sheet was irradiated with ultraviolet rays (illuminance 230 mW/cm2, light quantity 190 mJ/cm2). Accordingly, a laminate in which a plurality of chips were provided on a dicing sheet was obtained.

Subsequently, the release sheet was peeled from the work handling sheet manufactured in the examples and comparative examples, and the exposed surface thus exposed was bonded to the surface of the laminate obtained as above where a plurality of chips were present. After that, the dicing sheet was peeled from the plurality of chips. Accordingly, a plurality of chips were transferred from the dicing sheet to a work handling sheet, and a laminate in which a plurality of chips were provided on the work handling sheet was obtained.

(1-2) Example 14

The release sheet was peeled from the work handling sheet manufactured in Example 14, and the exposed surface thus exposed was attached to one side of a silicon wafer (#2000, thickness: 350 μm). Subsequently, a ring frame for dicing was attached to the peripheral portion of the exposed surface of the work handling sheet (a position not overlapping with the silicon wafer). Additionally, the work handling sheet was cut to match the outer diameter of the ring frame. Thereafter, the silicon wafer was diced into chips having a size of 300 µm x 300 µm using a dicing device (manufactured by DISCO CORPORATION, product name “DFD6362”). Accordingly, a laminate in which a plurality of chips were provided on a work handling sheet was obtained.

(2) Separation of chips by laser light irradiation (separation process)

The laminate obtained in step (1) above, in which a plurality of chips are provided on a work handling sheet, was irradiated with laser light to the chips through the work handling sheet using a laser light irradiation device. The above irradiation was performed using two types of laser light irradiation devices, and for Examples 1 to 3 and 5 to 15 and Comparative Example 1, the first type of laser light irradiation device (indicated as “Type 1” in Table 1) was used. Example 4 and Comparative Example 2 were performed using a second type of laser light irradiation device (indicated as “Type 2” in Table 1).

(2-1) Examples 1 to 3 and 5 to 15 and Comparative Example 1

Laser light was irradiated to the chip through the work handling sheet using a laser light irradiation device (YAG third harmonic (wavelength 355 nm), pulse width 20 ns, light quantity 700 mJ/cm2). The above irradiation was performed on an area of 270 μm × 270 μm in the center of the chip. Other irradiation conditions were frequency: 30 kHz, irradiation amount: 50 μJ/shot. Additionally, the survey was conducted on 100 chips (matching 10 chips vertically and 10 horizontally) from a plurality of chips.

(2-2) Example 4 and Comparative Example 2

A laser light irradiation device (manufactured by KEYENCE CORPORATION, product name "MD-U1000C") was used to irradiate laser light to the chip through the work handling sheet. The above irradiation was performed by sequentially irradiating the laser light spot to the center of the chip as if drawing a circle. At this time, the diameter of the laser beam spot was set to 25 ㎛, and the inner diameter of the ring generated as the irradiation trace was 65 ㎛. Other irradiation conditions were frequency: 40 kHz, scan speed: 500 mm/s, and irradiation amount: 50 μJ/shot. Additionally, the survey was conducted on 100 chips (matching 10 chips vertically and 10 horizontally) from a plurality of chips.

(3) Confirmation of blisters and chip separation

For the work handling sheet and chips that were investigated above, the presence or absence of blisters at the interface between the substrate in the work handling sheet and the interfacial ablation layer, and the presence or absence of chips from the work handling sheet were examined. This was confirmed and the laser lift-off aptitude was evaluated based on the following criteria. The results are shown in Table 1.

◎ … Blisters occurred at the locations of all 100 chips, and all 100 chips were detached.

○ … The number of chips in which blisters occurred and detached was 80 to 100.

× … The number of chips in which blisters were generated and detached was less than 80.

[Test Example 2] (Measurement of ultraviolet absorbance and ultraviolet transmittance)

The release sheet was peeled from the work handling sheets manufactured in Examples and Comparative Examples, and the interfacial ablation layer was exposed. For this work handling sheet, ultraviolet rays were measured using an ultraviolet, visible, and near-infrared spectrophotometer (product name “UV-3600” manufactured by Shimadzu Corporation) and an attached large sample chamber (product name “MPC-3100” manufactured by Shimadzu Corporation). Absorbance and ultraviolet light transmittance (%) were measured. The measurement was performed by irradiating light with a wavelength of 355 nm toward the surface on the interface ablation layer side with a slit width of 20 nm using an integrating sphere built into the spectrophotometer. The results are shown in Table 1.

[Test Example 3] (Evaluation of chip protection)

In Test Example 1, for all chips detached from the work handling sheet by laser beam irradiation, the presence or absence of laser beam irradiation marks on the laser beam irradiation surface was examined using a digital microscope (manufactured by KEYENCE CORPORATION, product name "VHX-7000"). ), visually confirmed at a magnification of 100 times, and chip protection was evaluated based on the following criteria. The results are shown in Table 1.

◎ … No traces of laser light irradiation occurred.

○ … Regarding the irradiation pattern of the incident laser, it was determined that the irradiation pattern could not be determined because the trace was unclear.

× … It was judged that the irradiation pattern of the incident laser could be clearly identified as a trace.

[Test Example 4] (Evaluation of chip visibility beyond tape)

In Test Example 1, for a plurality of chips transferred to the work handling sheet, it was confirmed whether the surface of the chip could be visually recognized beyond the work handling sheet, and the visibility of the chips beyond the tape was evaluated based on the following criteria.

○ … I could admit it.

× … I couldn't admit it.

In addition, details such as abbreviations listed in Table 1 are as follows.

Tinuvin477: Tris[2,4,6-[2-{4-(octyl-2-methylethanoate)oxy-2-hydroxyphenyl}]-1,3,5-triazine (hydroxyphenyltriazine series Ultraviolet absorber, manufactured by BASF Corporation, product name “Tinuvin477”)

Tinuvin479: 2-(2-hydroxy-4-[1-octyloxycarbonylethoxy]phenyl)-4,6-bis(4-phenylphenyl)-1,3,5-triazine (hydroxyphenyltriazine Jinkye ultraviolet absorber, manufactured by BASF Corporation, product name “Tinuvin479”)

Tinuvin326: 2-(5-chloro-2H-benzotriazol-2-yl)-6-(1,1-dimethylethyl)-4-methylphenol (benzotriazole-based ultraviolet absorber, manufactured by BASF Corporation, product name “Tinuvin326” )

CYASORB UV-24: 2,2'-dihydroxy-4-methoxybenzophenone (benzophenone-based ultraviolet absorber, manufactured by SOLVAY, product name “CYASORB UV-24”)

PET: Polyethylene terephthalate film (manufactured by Mitsubishi Chemical Corporation, product name “T-910 WM19”, thickness: 50㎛)

PO: A polyolefin-based film (resin composition containing ethylene-methacrylic acid copolymer (manufactured by Dow-Mitsui Polychemicals Company, Ltd., product name “Nucrel NH903C”)) was extruded using a small T-die extruder (Toyo Seiki Seisaku-sho, Ltd.). Film with a thickness of 80 ㎛ obtained by extrusion molding manufactured by (product name: “Laboplastomil”)

[Table 1]

As is clear from Table 1, the work handling sheets manufactured in Examples had excellent laser lift-off aptitude. In addition, in the work handling sheet manufactured in the examples, the ultraviolet transmittance was sufficiently reduced and chip protection and chip visibility beyond the tape were excellent.

The work handling sheet of the present invention can be suitably used in the manufacture of displays including micro light-emitting diodes as pixels.

1: Work handling seat
11: Interfacial ablation layer
12: Description
13: reaction area
2, 2': Work small piece
3: object
4: Laser light
5: Blister
6: Laser light irradiation point

Claims (21)

With equipment,
A work handling sheet that is laminated on one side of the substrate and has an interfacial ablation layer that is capable of holding small work pieces and performs interfacial ablation by irradiation of laser light,
A work handling sheet, wherein the interfacial ablation layer contains an ultraviolet absorber. According to paragraph 1,
A work handling sheet, characterized in that the ultraviolet absorber is an organic compound. According to claim 1 or 2,
A work handling sheet, characterized in that the ultraviolet absorber is a compound having one or more heterocycles. According to any one of claims 1 to 3,
The ultraviolet absorber has at least one type of carbocyclic ring and heterocyclic ring,
A work handling sheet, wherein all of the carbocycles and heterocycles of the ultraviolet absorber are monocyclic. According to any one of claims 1 to 4,
A work handling sheet, characterized in that the ultraviolet absorber is a compound having a plurality of aromatic rings. According to any one of claims 1 to 5,
A work handling sheet, characterized in that the content of the ultraviolet absorber in the interfacial ablation layer is 1% by mass or more and 75% by mass or less. According to any one of claims 1 to 6,
The work handling sheet is characterized in that the work handling sheet has an absorbance of light with a wavelength of 355 nm of 2.0 or more. According to any one of claims 1 to 7,
The work handling sheet is characterized in that the transmittance of light with a wavelength of 355 nm is 1.0% or less. According to any one of claims 1 to 8,
A work handling sheet, wherein the interfacial ablation layer is an adhesive layer. According to clause 9,
A work handling sheet, characterized in that the adhesive constituting the adhesive layer is an acrylic adhesive. According to any one of claims 1 to 10,
A work handling sheet, characterized in that the laser light has a wavelength in the ultraviolet range. According to any one of claims 1 to 11,
A work handling sheet, wherein when interfacial ablation occurs in the interfacial ablation layer, a blister is formed at the location where the interfacial ablation occurred. According to any one of claims 1 to 12,
By the interfacial ablation locally generated in the interface ablation layer, any work piece among the plurality of work pieces held on the surface opposite to the substrate in the interface ablation layer is subjected to the interface ablation. A work handling sheet, characterized in that it is used for selective separation from a layer. According to clause 13,
A work handling sheet, characterized in that the work pieces are obtained by dividing a work held on a side opposite to the substrate in the interface ablation layer into pieces on this side. According to claim 13 or 14,
A work handling sheet, characterized in that the work piece is at least one type selected from semiconductor components and semiconductor devices. According to any one of claims 13 to 15,
A work handling sheet, wherein the work piece is a light emitting diode selected from mini light emitting diodes and micro light emitting diodes. A work handling sheet comprising a base material and an interfacial ablation layer containing an ultraviolet absorber laminated on one side of the base material, wherein a plurality of work pieces are held on the surface on the side of the interfacial ablation layer. A preparatory process for preparing a sieve,
A placement step of arranging the laminate so that surfaces on the work piece side of the laminate face each other with respect to an object capable of receiving the work piece,
Laser light is irradiated to a position in the interface ablation layer of the laminate where at least one work piece is attached, and interfacial ablation is generated at the irradiated position in the interface ablation layer. A device manufacturing method comprising a separation step of separating the work piece present at a position where the interface ablation occurs from the work handling sheet and placing the work piece on the object. According to clause 17,
A device manufacturing method characterized in that, in the preparation step, the work held on a side opposite to the substrate in the interfacial ablation layer is separated into pieces on the side to obtain the work pieces. According to claim 17 or 18,
A device manufacturing method, wherein the work piece is at least one type selected from semiconductor components and semiconductor devices. According to any one of claims 17 to 19,
A device manufacturing method characterized by manufacturing a light-emitting device having a plurality of light-emitting diodes by using light-emitting diodes selected from mini light-emitting diodes and micro light-emitting diodes as the work pieces. According to clause 20,
A device manufacturing method, wherein the light-emitting device is a display.