KR20230150920A - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

The present invention provides an organic light emitting display device capable of connecting an auxiliary electrode and a cathode electrode while depositing an organic light emitting layer on the entire surface, and a method for manufacturing the same. The present invention provides an auxiliary electrode disposed on a first substrate, and an auxiliary electrode disposed spaced apart from the auxiliary electrode. It includes a thin film transistor and a first electrode electrically connected to the thin film transistor. Additionally, the present invention includes a multilayer electrode electrically connected to an auxiliary electrode, an organic light emitting layer disposed on the first electrode, and a second electrode connected to the multilayer electrode, and the organic light emitting layer is separated by the multilayer electrode.

Description

Organic light emitting display device and manufacturing method thereof {ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME}

The present invention relates to an organic light emitting display device, and more specifically, to a top emission type organic light emitting display device and a method of manufacturing the same.

An organic light emitting display (OLED) is a self-emitting device that has low power consumption, high-speed response speed, high luminous efficiency, high luminance, and wide viewing angle.

Organic light emitting display devices (OLEDs) are divided into a top emission type and a bottom emission type depending on the transmission direction of light emitted through the organic light emitting element. Since the bottom light emitting method has a problem of lowering the aperture ratio, the top light emitting method has been mainly used recently.

Such a conventional top-emission organic light emitting display device includes a thin film transistor on a substrate, and a passivation layer, a planarization layer, an anode electrode, an auxiliary electrode, a bank, an organic light emitting layer, and a cathode electrode on the thin film transistor.

At this time, the conventional organic light emitting display device has a disadvantage in that it is difficult to deposit the organic light emitting layer on the entire surface. Conventional organic light emitting display devices have a problem in that when the organic light emitting layer is deposited on the entire surface, the space for connecting the cathode electrode and the auxiliary electrode is covered by the organic light emitting layer, making it impossible to connect the auxiliary electrode and the cathode electrode.

The present invention was developed to solve the above-mentioned problems, and its technical task is to provide an organic light emitting display device and a manufacturing method thereof that can connect an auxiliary electrode and a cathode electrode while depositing an organic light emitting layer on the entire surface.

The present invention for achieving the above-described technical problem includes an auxiliary electrode disposed on a first substrate, a thin film transistor disposed to be spaced apart from the auxiliary electrode, and a first electrode electrically connected to the thin film transistor. In addition, the present invention includes a multilayer electrode electrically connected to an auxiliary electrode, an organic light emitting layer disposed on the first electrode, and a second electrode connected to the multilayer electrode, and the organic light emitting layer is an organic light emitting layer separated by the multilayer electrode. A light emitting display device and a manufacturing method thereof are provided.

In the organic light emitting display device according to an example of the present invention, the multilayer electrode has an undercut shape, thereby preventing defective driving between pixels by separating the organic light emitting layer.

In addition, the organic light emitting display device according to an example of the present invention has the effect of exposing the multilayer electrode while depositing the organic light emitting layer on the entire active area without an additional process due to the undercut shape of the multilayer electrode.

In addition, in the organic light emitting display device according to an example of the present invention, one side of the exposed multilayer electrode is connected to the second electrode, so that the other side of the multilayer electrode is electrically connected to the auxiliary electrode, and the second electrode is connected by the auxiliary electrode. It has the effect of reducing resistance.

The effects that can be obtained from the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the description below. .

1 is a cross-sectional view of an organic light emitting display device according to an example of the present invention.
2 to 9 are cross-sectional process views for explaining a method of manufacturing an organic light emitting display device according to an example of the present invention.

The meaning of terms described in this specification should be understood as follows.

Singular expressions should be understood to include plural expressions unless the context clearly defines otherwise, and terms such as “first”, “second”, etc. are used to distinguish one element from another element. The scope of rights should not be limited by these terms. Terms such as “include” or “have” should be understood as not precluding the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof. The term “at least one” should be understood to include all possible combinations from one or more related items. For example, “at least one of the first, second, and third items” means each of the first, second, or third items, as well as two of the first, second, and third items. It means a combination of all items that can be presented from more than one. The term “on” means not only the case where a component is formed directly on top of another component, but also the case where a third component is interposed between these components.

Hereinafter, a preferred example of the organic light emitting display device and its manufacturing method according to the present invention will be described in detail with reference to the attached drawings. In adding reference numerals to components in each drawing, identical components may have the same reference numerals as much as possible even if they are shown in different drawings. Additionally, when describing the present invention, if it is determined that a detailed description of a related known configuration or function may obscure the gist of the present invention, the detailed description may be omitted.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

1 is a cross-sectional view of an organic light emitting display device according to an example of the present invention.

Referring to FIG. 1, an organic light emitting display device according to an example of the present invention includes an active area (AA) and a pad area (PA).

The active area (AA) includes a first substrate 100, an auxiliary electrode 110, a buffer layer 120, a thin film transistor (T), a connection electrode 175, a passivation layer 180, a planarization layer 190, It includes one electrode 200, a multilayer electrode 210, a bank 220, an organic light emitting layer 230, a second electrode 240, and a second substrate 300.

The first substrate 100 is mainly made of glass, but a transparent plastic that can be bent or bent, for example, polyimide, may be used. When using polyimide as a material for the first substrate 100, considering that a high temperature deposition process is performed on the first substrate 100, polyimide with excellent heat resistance that can withstand high temperatures can be used. .

The auxiliary electrode 110 is disposed in the active area AA on the first substrate 100. The auxiliary electrode 110 is connected to the second electrode 240 through a connection electrode 175 and a multilayer electrode 210, which will be described later. This auxiliary electrode 110 is connected to the second electrode 240 and serves to reduce the resistance of the second electrode 240. At this time, the auxiliary electrode 110 is, for example, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). ) It may be a single layer or a multilayer made of any one or an alloy thereof.

The buffer layer 120 may be disposed on the entire upper surface of the first substrate 100. This buffer layer 120 functions to prevent moisture from penetrating into the first substrate 100, which is vulnerable to moisture permeation. Additionally, the buffer layer 120 functions to prevent impurities such as metal ions from diffusing from the first substrate 100 and penetrating into the active layer 130 of the thin film transistor (T). At this time, the buffer layer 120 may be made of an inorganic insulating material, such as silicon dioxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiON), or multiple layers thereof, but is not limited thereto.

The thin film transistor T is disposed on the buffer layer 120. This thin film transistor (T) includes an active layer 130, a gate insulating layer 140, a gate electrode 150, an interlayer insulating layer 160, a source electrode 171, and a drain electrode 173.

The active layer 130 is disposed on the first substrate 100 disposed in the active area AA. The active layer 130 is arranged to overlap the gate electrode 150. The active layer 130 may be composed of one end region located on the source electrode 171 side, the other end region located on the drain electrode 173 side, and a central region located between the one end region and the other end region. The central region may be made of a semiconductor material that is not doped with a dopant, and one end region and the other end region may be made of a semiconductor material that is doped with a dopant.

The gate insulating layer 140 is disposed on the active layer 130. This gate insulating layer 140 functions to insulate the active layer 130 and the gate electrode 150. At this time, the gate insulating layer 140 may be made of an inorganic insulating material, such as silicon dioxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiON), or multiple layers thereof, but is not limited thereto.

The gate electrode 150 is disposed on the gate insulating layer 140. The gate electrode 150 overlaps the central region of the active layer 130 with the gate insulating layer 140 interposed therebetween. At this time, the gate electrode 150 is made of, for example, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). ) may be a single layer or a multi-layer made of any one of these or an alloy thereof, but is not limited thereto.

The interlayer insulating layer 160 is disposed on the gate electrode 150. The interlayer insulating layer 160 is disposed on the entire surface of the active area AA including the gate electrode 150. At this time, the interlayer insulating layer 160 may be made of the same inorganic insulating material as the gate insulating layer 140, for example, silicon dioxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiON), or multiple layers thereof. However, it is not limited to this.

remind The source electrode 171 and the drain electrode 173 are arranged to be spaced apart from each other on the interlayer insulating layer 160. The interlayer insulating layer 160 is provided with a first contact hole that exposes a portion of one end of the active layer 130 and a second contact hole that exposes a portion of the other end of the active layer 130. The source electrode 171 is connected to one end of the active layer 130 through a first contact hole, and the drain electrode 173 is connected to the other end of the active layer 130 through a second contact hole. At this time, the source and drain electrodes 171 and 173 are, for example, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium (Nd). It may be a single layer or a multi-layer made of any one of and copper (Cu) or an alloy thereof. In particular, the source and drain electrodes 171 and 173 according to an example of the present invention may be composed of, for example, sequentially stacked MoTi/Cu/MoTi. However, it is not limited to this.

The configuration of the thin film transistor T described above is not limited to the example described above, and can be modified in various ways to known configurations that can be easily implemented by those skilled in the art.

The connection electrode 175 is disposed on the interlayer insulating layer 160. The connection electrode 175 is arranged to be spaced apart from the source and drain electrodes 171 and 173 and may be made of the same material as the source and drain electrodes 171 and 173. One side of the connection electrode 175 is connected to the auxiliary electrode 110 and the other side is connected to the multilayer electrode 210, and functions to connect the auxiliary electrode 110 and the second electrode 240. The connection electrode 175 is partially exposed by a groove formed in the passivation layer 180, and is connected to the multilayer electrode 210 through the exposed connection electrode 175. At this time, the connection electrode 175 is, for example, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). ) It may be a single layer or a multilayer made of any one or an alloy thereof. In particular, the connection electrode 175 according to an example of the present invention may be composed of, for example, sequentially stacked MoTi/Cu/MoTi, but is not limited thereto.

The passivation layer 180 is It is disposed on the thin film transistor (T) and the connection electrode 175. The passivation layer 180 is disposed in the active area (AA) on the first substrate 100, and may also be disposed in some pad areas (PA). This passivation layer 180 serves to protect the thin film transistor (T). At this time, the passivation layer 180 may be made of an inorganic insulating material such as silicon dioxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiON), or multiple layers thereof, but is not limited thereto.

The planarization layer 190 is disposed on the thin film transistor (T) and the passivation layer 180, and more specifically, between the passivation layer 180 and the first electrode 200. This planarization layer 190 serves to flatten the top of the thin film transistor (T) and the passivation layer 180. The planarization layer 190 is made of an organic insulating material, such as acryl resin, epoxy resin, phenolic resin, polyamides resin, and polyimides resin. ), etc., but is not limited to this. The passivation layer 180 and the planarization layer 190 are provided with a third contact hole exposing the drain electrode 173 of the thin film transistor (T). The drain electrode 173 and the first electrode 200 are electrically connected through the third contact hole.

The first electrode 200 is disposed on the planarization layer 190. The first electrode 200 is connected to the drain electrode 173 of the thin film transistor T through a third contact hole provided in the passivation layer 180 and the planarization layer 190. This first electrode 200 may serve as an anode electrode, for example. At this time, the first electrode 200 may be made of a transparent conductive material with a relatively high work function value, such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO). In addition, the first electrode 200 may be composed of at least two or more layers containing a metal material with excellent reflection efficiency, such as aluminum (Al), silver (Ag), APC (Ag; Pb; Cu), etc. . Additionally, the first electrode 200 according to an example of the present invention may be composed of sequentially stacked ITO/Ag/ITO, but is not limited thereto.

The multilayer electrode 210 is disposed on the passivation layer 180. The multilayer electrode 210 is connected to the exposed connection electrode 175 through a groove provided in the passivation layer 180. One side of this multilayer electrode 210 is connected to the connection electrode 175, and the other side is connected to the second electrode 240, and functions to connect the second electrode 240 and the auxiliary electrode 110. At this time, the multilayer electrode 210 may be made of the same material as the first electrode 200. Additionally, the multi-layer wiring 210 may be made of a transparent conductive material with a relatively high work function, such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO). Additionally, the multi-layer wiring 210 according to an example of the present invention may be composed of at least two or more layers including aluminum (Al), silver (Ag), APC (Ag;Pb;Cu), etc.

The multi-layer wiring 210 according to an example of the present invention may include a first multi-layer electrode 211, a second multi-layer electrode 213, and a third multi-layer electrode 215 that are sequentially stacked.

The first multilayer electrode 211 is disposed on the connection electrode 175. One side of the first multilayer electrode 211 is connected to the connection electrode 175 and the other side is connected to the second electrode 240, thereby serving to connect the second electrode 240 and the auxiliary electrode 110. . At this time, the first multilayer electrode 211 according to an example of the present invention may be made of a material that does not undergo wet etching when heat is applied, for example, indium-tin-oxide (ITO). It is not limited.

The second multilayer electrode 213 is disposed between the first multilayer electrode 211 and the third multilayer electrode 215. The second multilayer electrode 213 is shorter than the first and third multilayer electrodes 211 and 215, so that the multilayer electrode 210 has a hollow shape. That is, the multilayer electrode 210 has an undercut shape due to the second multilayer electrode 213, which is shorter than the first and third multilayer electrodes 211 and 215. The multilayer electrode 210 separates the organic light emitting layer 230 disposed on the multilayer electrode 210 into pixels by this undercut shape. The organic light-emitting layer 230 is formed through a deposition process such as evaporation with excellent straightness of the deposition material, and is separated by the undercut shape of the multilayer electrode 210. Therefore, the multilayer electrode 210 according to an example of the present invention can be exposed without the organic light emitting layer 230 penetrating into the inside, and the organic light emitting layer 230 is separated, which has the effect of preventing defective driving between pixels. . At this time, the second multilayer electrode 213 may be made of silver (Ag), but is not limited thereto.

The third multilayer electrode 215 is disposed on the second multilayer electrode 213. At this time, the third multilayer electrode 215 according to an example of the present invention may be made of a material that does not undergo wet etching when heat is applied, and may be made of indium-tin-oxide (ITO), for example. It is not limited.

The multilayer electrode 210 according to an example of the present invention has an undercut shape, so that the organic light emitting layer 230 is separated and the multilayer electrode 210 is exposed to form the second electrode 240 and the multilayer electrode ( 210) can be connected. More specifically, in the multilayer electrode 210 according to an example of the present invention, one side of the first multilayer electrode 211 exposed by an undercut shape is connected to the second electrode 240, thereby forming the first multilayer electrode. It is electrically connected to the connection electrode 175 connected to the other side of 211 and the auxiliary electrode 110, and has the effect of reducing the resistance of the second electrode 240 by the auxiliary electrode 110.

When the multilayer electrode 210 is not configured in an undercut shape, in order to expose the connection electrode 175 connected to the auxiliary electrode 110, the upper surface of the connection electrode 175 is removed when depositing the organic light emitting layer 240. A mask pattern is needed to cover the , and additional processes occur accordingly. However, in the organic light emitting display device according to an example of the present invention, the organic light emitting layer 230 is entirely deposited on the active area (AA), but the organic light emitting layer 240 can be separated by the undercut shape of the multilayer electrode 210. and the second electrode 240 can be connected to the exposed multilayer electrode 210.

The bank 220 surrounds the side surfaces of the passivation layer 180 and the planarization layer 190 and is disposed on the first electrode 200. The bank 220 may overlap one side and the other side of the first electrode 200. These banks 220 partition the first electrode 200. At this time, the bank 220 may be made of an organic insulating material, such as polyimide resin, acryl resin, or benzocyclobutene (BCB), but is not limited thereto.

The organic light-emitting layer 230 is disposed on the first electrode 200. The organic light emitting layer 230 is deposited on the entire surface of the first substrate 100 in the active area (AA) and is separated by a multilayer electrode 210. This organic light-emitting layer 230 is a combination of a hole injection layer, a hole transport layer, an emitting layer, an electron transport layer, and an electron injection layer. It may be composed of, but is not necessarily limited to, and may be changed to various structures known in the art.

The second electrode 240 is disposed on the organic light emitting layer 230. The second electrode 240 extends from the organic light emitting layer 230 and is disposed entirely on the first substrate 100, and is electrically connected to the auxiliary electrode 110 by the multilayer electrode 210. When a voltage is applied to the second electrode 240 together with the first electrode 200, holes and electrons move to the organic light-emitting layer 230 through the hole transport layer and the electron transport layer, respectively, and combine with each other in the organic light-emitting layer 230. This causes it to emit light. At this time, the second electrode 240 may be made of a very thin metallic material with a low work function. For example, the second electrode 240 may be made of a metallic material such as silver (Ag), titanium (Ti), aluminum (Al), molybdenum (Mo), or an alloy of silver (Ag) and magnesium (Mg). there is.

The second substrate 300 is disposed on the second electrode 240 to face the first substrate 100. An encapsulation layer may be disposed between the second substrate 300 and the first substrate 100, and the encapsulation layer may prevent moisture from penetrating into the organic light emitting display device. In addition, the encapsulation layer contains an adhesive material and can bond the first substrate 100 and the second substrate 300. The encapsulation layer can be made of various materials known in the art. At this time, a color filter 310 may be disposed on the second substrate 300.

The color filter 310 is disposed on the second substrate 300 to correspond to each pixel area. The color filter 310 may be made of red, green, and blue color filters corresponding to each pixel area, and a light blocking layer 320 to prevent color mixing between the red, green, and blue color filters is provided. may be included.

The pad area PA includes a first signal pad 135, a second signal pad 155, and a third signal pad 177 on the first substrate 100 and the buffer layer 120.

The first signal pad 135 is disposed on the buffer layer 120. The first signal pad 135 is disposed on the same layer as the active layer 130 and spaced apart from each other, and may be made of the same material as the active layer 130.

The second signal pad 155 is disposed on the first signal pad 135. The second signal pad 155 may be made of the same material as the gate electrode 150. At this time, the second signal pad 155 is made of, for example, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper. It may be a single layer or a multi-layer made of any one of (Cu) or an alloy thereof, but is not limited thereto.

The third signal pad 177 is disposed on the interlayer insulating layer 160 and is connected to the second signal pad 155 through a contact hole provided in the interlayer insulating layer 160. At this time, the third signal pad 177 is made of, for example, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper. It may be a single layer or a multilayer made of any one of (Cu) or an alloy thereof. In particular, the connection electrode 175 according to an example of the present invention may be composed of, for example, sequentially stacked MoTi/Cu/MoTi, but is not limited thereto.

In the organic light emitting display device according to an example of the present invention, the multilayer electrode 210 disposed in the active area AA has an undercut shape, so that the organic light emitting layer 230 is separated to prevent defective driving between pixels. It works. In addition, the organic light emitting display device according to an example of the present invention deposits the organic light emitting layer 240 on the entire active area AA without an additional process due to the undercut shape of the multilayer electrode 210, while the multilayer electrode 210 It has the effect of exposing . Therefore, in the organic light emitting display device according to an example of the present invention, one side of the exposed first multilayer electrode 211 is connected to the second electrode 240, and thus the second electrode 240 is connected to the other side of the first multilayer electrode 211. It is electrically connected to the electrode 175 and the auxiliary electrode 110, and has the effect of reducing the resistance of the second electrode 240 by the auxiliary electrode 110.

2 to 9 are cross-sectional process views for explaining a method of manufacturing an organic light emitting display device according to an example of the present invention. This relates to the manufacturing method of the organic light emitting display device according to FIG. 1 described above. Accordingly, the same reference numerals are assigned to the same components, and redundant descriptions of repeated parts in the materials and structures of each component are omitted.

First, as shown in FIG. 2, an auxiliary electrode 110 is formed on the first substrate 100, and a buffer layer 120 is formed. Then, a thin film transistor (T), a connection electrode 175, and signal pads 135, 155, and 177 are formed on the buffer layer 120.

The process of forming the thin film transistor (T) includes forming an active layer 130 on a first substrate 100, forming a gate insulating layer 140 on the active layer 130, and forming a gate insulating layer 140 on the first substrate 100. ) A gate electrode 150 is formed on the gate electrode 150, an interlayer insulating layer 160 is formed on the gate electrode 150, and a contact hole is formed in the interlayer insulating layer 160 to form a source on the interlayer insulating layer 160. and a process of forming the drain electrodes 171 and 173 to be connected to the active layer 130 through a contact hole.

The thin film transistor (TFT) formation process can use various methods known in the art.

In the process of forming the connection electrode 175, a contact hole is formed in the buffer layer 120 and the interlayer insulating layer 160, and the connection electrode 175 is formed on the interlayer insulating layer 160 through the contact hole. 110) and includes a forming process to be connected.

The process of forming the signal pads 135, 155, and 177 includes forming a first signal pad 135 on the buffer layer 120 and forming a second signal pad 155 on the first signal pad 135. Then, an interlayer insulating layer 160 is formed on the second signal pad 155, a contact hole is formed in the interlayer insulating layer 160, and a third signal pad 177 is formed on the interlayer insulating layer 160. It includes a forming process to be connected to the second signal pad 155 through a contact hole. At this time, the process of forming the first signal pad 135 may be performed simultaneously with the process of forming the active layer 130 of the thin film transistor (T). Additionally, the process of forming the second signal pad 155 may be performed simultaneously with the process of forming the gate electrode 150 of the thin film transistor (T). Additionally, the process of forming the third signal pad 177 may be performed simultaneously with the same process as the process of forming the connection electrode 175, the source electrode 171, and the drain electrode 173.

A thin film transistor (T), a connection electrode 175, and a signal pad 135, 155, and 177 are formed on the buffer layer 120, and then a passivation layer 180 is formed on the entire upper surface of the first substrate 100. , After forming the planarization layer 190 on the passivation layer 180 and exposing the connection electrode 175, drain electrode 173, and signal pads 135, 155, and 177, the first substrate 100 A multi-layer wiring 210a is formed on the upper front surface. The multilayer wiring 210a may be composed of a first multilayer wiring 211a, a second multilayer wiring 213a, and a third multilayer wiring 215a stacked in order.

Then, as shown in FIG. 3, a bank 220 is patterned on the top of the thin film transistor T and the connection electrode 175 using a half tone mask.

Then, as shown in FIG. 4, the first electrode 200 and the multilayer electrode 210 are formed by patterning the multilayer wiring 210a using the bank 220 as a mask.

Then, as shown in FIG. 5, a portion of the bank 220 formed on the first electrode 200 and the multilayer electrode 210 is etched and removed through an ashing process.

Then, as shown in FIG. 6, heat is applied to the bank 220 through a curing process to increase spreadability, so that the bank 220 flows to cover both sides of the first electrode 200.

Then, as shown in FIG. 7, the first electrode 200 and the multilayer electrode 210 are heat treated, and then the multilayer electrode 210 is formed in an undercut shape through a wet etching process. The multilayer electrode 210 of the organic light emitting display device according to an example of the present invention includes a first multilayer electrode 211, a second multilayer electrode 213, and a third multilayer electrode 215, which are sequentially stacked. For example, the first multilayer electrode 211 and the third multilayer electrode 215 may be made of indium-tin-oxide (ITO). Indium-tin-oxide (ITO) is a conductive material. When amorphous indium-tin-oxide (ITO) is heat treated, it becomes crystallized indium-tin-oxide (ITO), lowering the resistance, and performing a wet etching process. Even if it does, it will not be cut. Accordingly, the exposed portion of the heat-treated first electrode 200 and the first and third multilayer electrodes 213 are not chipped even if a wet etching process is performed. However, the externally exposed second multilayer electrode 213 is dug inward by a wet etching process. Accordingly, the multilayer electrode 210 according to an example of the present invention has an undercut shape due to the second multilayer electrode 213 having a shorter length than the first and third multilayer electrodes 211 and 215. .

Then, as shown in FIG. 8, the organic light emitting layer 230 and the second electrode 240 are formed on the entire active area (AA) of the first substrate 100. The organic light-emitting layer 230 is formed through a deposition process such as evaporation, which has excellent straight-flow properties of the deposition material, and is separated by the undercut shape of the multilayer electrode 210. The second electrode 240 is connected to the first multilayer electrode 211 exposed by the separated organic light emitting layer 230.

Then, as shown in FIG. 9, the second substrate 300 on which the color filter 310 and the light blocking layer 320 are formed is bonded to the first substrate 100.

The organic light emitting display device according to an example of the present invention forms an undercut-shaped multilayer electrode 210 without a separate mask pattern to expose the connection electrode 175 connected to the auxiliary electrode 110, The second electrode 240 can be electrically connected to the auxiliary electrode 110 while being deposited on the entire surface.

Although embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made without departing from the technical spirit of the present invention. . Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but are for illustrative purposes, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive. The scope of protection of the present invention should be interpreted in accordance with the claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of rights of the present invention.

100: first substrate 110: auxiliary electrode
120: buffer layer 130: active layer
140: gate insulating layer 150: gate electrode
160: interlayer insulating layer 171, 173: source and drain electrodes
175: connection electrode 180: passivation layer
190: Planarization layer 200: First electrode
210: multilayer electrode 220: bank
230: organic light emitting layer 240: second electrode
300: second substrate 310: color filter
320: light blocking layer

Claims (15)

first substrate;
a buffer layer on the first substrate;
a thin film transistor on the buffer layer;
a passivation layer on the thin film transistor;
a planarization layer over the passivation layer;
a first electrode on the planarization layer and electrically connected to the thin film transistor;
a bank covering one side and the other side of the first electrode;
an organic light-emitting layer on the first electrode;
a second electrode on the organic light-emitting layer;
a second substrate facing the first substrate;
a color filter configured on the second substrate to face the second electrode; and
An organic light emitting display device comprising a light blocking layer configured between the color filters to overlap the banks. According to claim 1,
The first substrate includes an active area and a pad area,
The passivation layer is formed in a portion of the active area and the pad area on the first substrate. According to claim 2,
The passivation layer is comprised of SiO ₂ (silicon dioxide), SiN _x (silicon nitride), SiON (silicon oxynitride), or multiple layers thereof. According to claim 1,
The planarization layer is configured between the passivation layer and the first electrode. According to claim 4,
The planarization layer includes an organic insulating material. According to claim 1,
The bank surrounds sides of the passivation layer and the planarization layer. According to claim 1,
Further comprising an auxiliary electrode on the first substrate,
The buffer layer covers one end and the other end of the auxiliary electrode. According to claim 7,
The organic light emitting display device further includes a multilayer electrode formed on the auxiliary electrode and electrically connecting the auxiliary electrode and the second electrode. According to claim 8,
The organic light emitting display device wherein the bank is configured on the multilayer electrode. According to clause 9,
An organic light emitting display device, wherein the multilayer electrode has an undercut shape. According to clause 9,
The multilayer electrode includes a first multilayer electrode, a second multilayer electrode, and a third multilayer electrode, which are sequentially stacked,
The first multilayer electrode and the third multilayer electrode protrude in the direction of the first electrode beyond the bank constructed on the multilayer electrode,
The second electrode is connected to the first multilayer electrode and is spaced apart from the second multilayer electrode. According to claim 11,
The organic light emitting layer is separated for each pixel by the multilayer electrode. According to claim 11,
An organic light emitting display device in which the first and third multilayer electrodes are made of a material that does not undergo wet etching when heat is applied. According to claim 11,
The multilayer electrode is non-overlapping with the color filter. According to claim 11,
The multi-layer electrode is non-overlapping with the passivation layer.