KR100685840B1 - Organic electroluminescence device and method for fabricating of the same - Google Patents

Abstract

An organic electroluminescence device and a method for fabricating the same are provided to secure a superior moisture-transmission preventing effect by covering a second electrode with an inorganic layer. In an organic electroluminescence device, a semiconductor layer(320) is placed on a substrate(300). A gate insulation layer(330) is placed on the semiconductor layer(320). A gate electrode(340) is placed on the gate insulation layer(330). An insulation interlayer(350) is placed on the gate electrode(340). Source/drain electrodes(351,352) are placed on the insulation interlayer(350). A planarization layer(360) is placed on the insulation interlayer(350) and the source/drain electrodes(351,352). A first electrode(371) is placed on the planarization layer(360). A pixel defining layer(375) is placed on the planarization layer(360) and the first electrode(371), and exposes a part of the first electrode(371). An organic layer(380) is placed on the exposed first electrode(371). A second electrode is placed on the pixel defining layer(375) and the organic layer(380), covers the entire sides of the pixel defining layer(375) and the planarization layer(360), and is connected to the insulation interlayer(350) or the gate insulation layer(350). An inorganic layer is placed on the second electrode, covers the second electrode, and is connected to the insulation interlayer(350) or the gate insulation layer(330).

Description

Organic electroluminescent device and method for manufacturing same {Organic Electroluminescence Device And Method For Fabricating Of The Same}

1 is a cross-sectional view of a conventional organic light emitting display device.

2A and 2B are plan views showing pixel reductions of organic light emitting diodes;

3 to 6 are cross-sectional views of an organic light emitting display device according to an embodiment of the present invention.

<Description of Symbols for Major Symbols in Drawings>

100 substrate 110 buffer layer

120 semiconductor layer 130 gate insulating film

140: gate electrode 150: interlayer insulating film

151,152: source / drain electrodes

160: planarization film 171: first electrode

175: pixel definition layer 180: organic layer

190: second electrode 200: inorganic film layer

The present invention relates to an organic light emitting display device and a method for manufacturing the same, and more particularly, to an organic light emitting display device and a method for manufacturing the same that can effectively block moisture and oxygen from the outside.

In general, an organic light emitting display device is a self-luminous display device using a phenomenon that light is generated when electrons and holes recombine in an organic film layer when a current flows through a fluorescent organic film layer. Such an organic light emitting display device is structurally thin, lightweight, and has a simple component and a simple manufacturing process. In addition, it is possible to apply to high-definition display device with wide viewing angle, perfect video and high color display. It has low power consumption, low voltage DC voltage driving, and has suitable electrical characteristics for mobile devices.

The organic layer of the organic light emitting device is easily deteriorated by moisture and oxygen in the air, thereby deteriorating the characteristics of the device. Recently, a method for preventing the organic film layer from easily deteriorating has been sought.

1 is a cross-sectional view of a conventional organic light emitting display device.

Referring to FIG. 1, a buffer layer 110 is formed on a substrate 100. The semiconductor layer 120 is formed on the buffer layer 110, the gate insulating layer 130 is formed on the entire surface of the substrate 100, and the gate electrode 140 is formed on the gate insulating layer 130.

Subsequently, an interlayer insulating layer 150 is formed on the entire surface of the substrate 100. Source / drain electrodes 151 and 152 are formed on the interlayer insulating layer 150, and planarization layer 160 is formed on the source / drain electrodes 151 and 152. The planarization layer 160 includes a via hole exposing any one of the source / drain electrodes 151 and 152.

A reflective film 170 is formed on the planarization film 160, and a first electrode 171 is formed on the reflective film 170 and the planarization film 160. A pixel defining layer 175 is formed on the first electrode 171, and an opening is formed to expose the first electrode 171.

Thereafter, the organic layer 180 including the light emitting layer is formed on the first electrode 171 exposed through the opening. The second electrode 190 is formed on the organic layer 180, and the sealant 200 is coated on the substrate 100 to align the encapsulation substrate 210 having the transparent absorbent 220. Bonding to complete the conventional organic light emitting device.

However, the conventional organic light emitting device is exposed to the outer surface of the active area of the panel because the organic material does not prevent moisture permeation when the amount of moisture and oxygen outside the absorption rate of the absorbent located in the encapsulating substrate absorbs. External moisture and oxygen penetrate through the pixel definition layer or the planarization layer made of organic material.

Accordingly, as shown in the plan view showing the pixel reduction phenomenon of the organic light emitting display device of FIGS. 2A and 2B, there is a problem in that pixel shrinkage occurs due to deterioration due to moisture and oxygen from the outermost pixel of the panel.

Accordingly, an object of the present invention is to provide an organic electroluminescent device and a method for manufacturing the same, which can effectively block external moisture and oxygen. .

The object of the present invention is a substrate; A semiconductor layer on the substrate; A gate insulating layer on the semiconductor layer; A gate electrode on the gate insulating layer; An interlayer insulating layer on the gate electrode; A source / drain electrode on the interlayer insulating film; A planarization layer on the interlayer insulating layer and the source / drain electrode; A first electrode on the planarization film; A pixel definition layer on the planarization layer and the first electrode and exposing a portion of the first electrode; An organic layer disposed on the exposed first electrode; A second electrode on the pixel definition layer and the organic layer, the second electrode covering both sides of the pixel definition layer and sides of the planarization layer and connected to the interlayer or gate insulating layer; And an inorganic film layer disposed on the second electrode and covering all of the second electrodes and connected to the interlayer insulating film or the gate insulating film.

In addition, the object of the present invention is to provide a substrate; Forming a semiconductor layer on the substrate; Forming a gate insulating film on the semiconductor layer; Forming a gate electrode on the gate insulating film; Forming an interlayer insulating film on the gate electrode; Forming a source / drain electrode on the interlayer insulating film; Forming a planarization film on the interlayer insulating film and the source / drain electrode; Forming a first electrode on the planarization film; Forming a pixel definition layer on the first electrode to expose a portion of the first electrode; Forming an organic layer on the exposed first electrode; Forming a second electrode on the pixel definition layer and the organic layer to cover both sides of the pixel definition layer and sides of the planarization layer and connected to the interlayer or gate insulating layer; And forming an inorganic film layer covering all of the second electrodes on the second electrode and being connected to the interlayer insulating film or the gate insulating film.

Details of the above object and technical configuration of the present invention and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention. In the drawings, the length, thickness, etc. of layers and regions may be exaggerated for convenience. Like numbers refer to like elements throughout.

3 to 6 are cross-sectional views of an organic light emitting display device according to an embodiment of the present invention.

Referring to FIG. 3, a substrate 300 is provided. A buffer layer 310 is formed on the substrate 300. The buffer layer 310 may be a silicon oxide film, a silicon nitride film, or multiple layers thereof.

The semiconductor layer 320 is formed on the buffer layer 310. The semiconductor layer 320 may be an amorphous silicon film or a polycrystalline silicon film obtained by crystallizing an amorphous silicon film. A gate insulating layer 330 is formed on the semiconductor layer 320. The gate insulating layer 330 may be a silicon oxide layer, a silicon nitride layer, or a multilayer thereof.

Subsequently, a gate electrode material 340 is formed on the gate insulating layer 330 and patterned to form a gate electrode 340 in a region corresponding to a portion of the semiconductor layer 320.

An interlayer insulating layer 350 is formed on the substrate 300. The interlayer insulating film 350 may be a silicon oxide film, a silicon nitride film, or a multilayer thereof. Contact holes exposing the semiconductor layer 320 are formed on the interlayer insulating layer 350. A conductive film is stacked on the substrate 300 on which the contact holes are formed, and then patterned to form source / drain electrodes 351 and 352. The source and drain electrodes 351 and 352 are connected to the semiconductor layer 320 through the contact hole.

The planarization layer 360 is formed on the source / drain electrodes 351 and 352 and the interlayer insulating layer 350, and the planarization layer 360 is etched to form via holes.

The planarization layer 360 may be formed of an acrylic resin or a polyimide resin, which is an organic material in the case of top emission, and may be a silicon oxide film, a silicon nitride layer, or a multilayer thereof, which is an inorganic material in the case of the bottom emission.

The reflective film 370 is formed on the planarization film 360. The reflective film 370 may be Ag, Al, or an alloy thereof. In addition, the reflective film 370 may not be formed in the case of the bottom emission.

Subsequently, a transparent conductive film such as ITO is stacked on the substrate 300, and then the transparent conductive film is patterned to form a first electrode 371 including the reflective film 370. The first electrode 371 may use ITO or IZO.

A pixel defining layer 375 having an opening is formed on the entire surface of the substrate 300. The pixel defining layer 375 may be an organic film made of acrylic resin or polyimide resin, and may be formed of an inorganic film such as spin on glass (SOG).

The organic layer 380 is formed on the first electrode 371 exposed through the opening. The organic layer 380 may include at least an organic light emitting layer and may further include at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

As described above, the organic layer 380, the pixel definition layer 375, and the planarization layer 360 have poor adhesion to the sealant in the region where the sealant is formed on the outer side of the panel, and thus the pixel definition layer 375 made of organic material. And the sidewalls of the pixel definition layer 375 and the planarization layer 360 are exposed since the planarization layer 360 is not etched.

Therefore, outside air may flow into the device along side surfaces of the pixel definition layer 375 and the planarization layer 360 exposed as described above.

In the present invention, in order to prevent the inflow of the outside air, as shown in FIG. 4, the pixel definition layer 375 and the organic layer 380 are disposed on the side of the pixel definition layer 375 and the planarization. A second electrode 390 is formed to cover all sides of the film 360 and to be connected to the interlayer insulating film 350 or the gate insulating film 330. The second electrode 390 may be formed by thinly forming Mg, Ag, Al, Ca, and an alloy thereof in the case of top emission, and may be formed thick in the case of the bottom emission. In addition, the second electrode 390 may be formed using a sputtering method or the like.

Subsequently, referring to FIG. 5, an inorganic film layer disposed on the second electrode 390 and covering all of the second electrodes 390 and connected to the gate insulating film 330 or the interlayer insulating film 350. To form 400. The inorganic film layer 400 may be a silicon oxide film, a silicon nitride film, or a multilayer thereof, and may be formed using a CVD method or the like.

As described above, in order to prevent outside air from penetrating into the pixel defining layer 375 and the flattening layer 360, the second electrode covering both the side surfaces of the pixel defining layer 375 and the flattening layer 360 ( By covering 390 with the inorganic layer 400 once again, it is possible to exhibit a better moisture permeation prevention effect.

Subsequently, referring to FIG. 6, a sealant 410 is coated on the interlayer insulating film 350, the gate insulating film 330, or the buffer layer 310 made of an inorganic material formed on the substrate 300.

Subsequently, the transparent absorbent 430 is formed on one surface of the encapsulation substrate 420. The transparent absorbent 430 may form an absorbent having no transparent property in case of back emission.

Thereafter, the substrate 300 and the encapsulation substrate 420 are aligned and bonded to complete the organic light emitting display device according to the embodiment of the present invention.

As described above, the second electrode is formed to cover both the planarization film and the pixel definition film made of the organic material, and the inorganic film layer is formed to cover all of the second electrodes, thereby forming an organic material exposed to the outer surface of the active area of the conventional panel. There is an advantage that can block external moisture and oxygen penetrating into the planarization film and the pixel definition film.

The present invention has been shown and described with reference to the preferred embodiments as described above, but is not limited to the above embodiments and those skilled in the art without departing from the spirit of the present invention. Various changes and modifications will be possible.

Therefore, the organic light emitting display device and the manufacturing method thereof according to the present invention have an effect of increasing the reliability of the device by blocking external moisture and oxygen.

Claims (8)

Board; A semiconductor layer on the substrate; A gate insulating layer on the semiconductor layer; A gate electrode on the gate insulating layer; An interlayer insulating layer on the gate electrode; A source / drain electrode on the interlayer insulating film; A planarization layer on the interlayer insulating layer and the source / drain electrode; A first electrode on the planarization film; A pixel definition layer on the planarization layer and the first electrode and exposing a portion of the first electrode; An organic layer disposed on the exposed first electrode; A second electrode on the pixel definition layer and the organic layer, the second electrode covering both sides of the pixel definition layer and sides of the planarization layer and connected to the interlayer or gate insulating layer; And And an inorganic film layer disposed on the second electrode and covering all of the second electrodes and connected to the interlayer insulating film or the gate insulating film. The method of claim 1, The planarization film is an organic light emitting device, characterized in that consisting of an organic film or an inorganic film. The method of claim 1, And the pixel defining layer is formed of an organic layer or an inorganic layer. The method of claim 1, The inorganic layer is an organic light emitting display device, characterized in that made of silicon nitride or silicon oxide. Providing a substrate; Forming a semiconductor layer on the substrate; Forming a gate insulating film on the semiconductor layer; Forming a gate electrode on the gate insulating film; Forming an interlayer insulating film on the gate electrode; Forming a source / drain electrode on the interlayer insulating film; Forming a planarization film on the interlayer insulating film and the source / drain electrode; Forming a first electrode on the planarization film; Forming a pixel definition layer on the first electrode to expose a partial region of the first electrode; Forming an organic layer on the exposed first electrode; Forming a second electrode on the pixel definition layer and the organic layer to cover both sides of the pixel definition layer and sides of the planarization layer and connected to the interlayer or gate insulating layer; And Forming an inorganic film layer covering all of the second electrodes on the second electrode and connected to the interlayer insulating film or the gate insulating film; and manufacturing an organic light emitting display device. The method of claim 5, The planarization film is a manufacturing method of an organic light emitting device, characterized in that consisting of an organic film or an inorganic film. The method of claim 5, And the pixel defining layer comprises an organic layer or an inorganic layer. The method of claim 5, The inorganic film layer is a method of manufacturing an organic light emitting device, characterized in that consisting of silicon nitride or silicon oxide.

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