KR20230140271A - An apparatus for depositing large area thin film and large area thin film deposting method using of the same - Google Patents

Abstract

The present invention is a thin film deposition technology for the formation of functional thin films, including a large-area thin film deposition device that allows deposition of large-area thin films while reducing thickness deviation, a large-area thin film deposition method using the same, and large-area thin film deposition using the same. It's about method.
The large-area thin film deposition apparatus according to the present invention includes a supply roller and a recovery roller for supplying and recovering a substrate in a roll-to-roll method, and is disposed on the supply path of the substrate between the supply roller and the recovery roller, and is disposed on the supply path of the substrate before deposition. /A sensor array for measuring the thickness distribution in the width direction of the substrate, a transport means for moving the sensor array along the deposition area to be deposited on the substrate, an evaporation means for evaporating the metal material to be deposited on the substrate, and It is provided between the substrate and the evaporation means and includes a deposition induction shield that allows a gradient of supply of the metal material supplied to the substrate through the open area, and the open area formed in the deposition induction shield has the formula H(x) = K*1/F(x). (Here, x represents the length of the substrate width, K represents the proportionality constant, and F(x) represents the thickness distribution in the width direction of the substrate calculated by the sensor array. where H(x) is the distribution of the width of the open area formed on the deposition induction shield), the present invention has the advantage of stably producing a large-area thin film with a uniform thickness distribution.

Description

Large area thin film deposition apparatus and large area thin film deposition method using the same { An apparatus for depositing large area thin film and large area thin film deposting method using of the same }

The present invention is a thin film deposition technology for forming functional thin films. It relates to a large-area thin film deposition apparatus that allows deposition of large-area thin films while reducing thickness deviation and a large-area thin film deposition method using the same.

Recently, the large area and high functionality of display panels have progressed at a rapid pace, and as new types of display panel technologies have emerged, the demand for large-area thin film deposition technology suitable for this is increasing, and research and development is being conducted accordingly.

When depositing a raw material on the surface of a substrate to form a large-area functional thin film, a vacuum deposition method is used in which the substrate and an evaporation means containing the raw material in powder form are placed facing each other inside a chamber, and the raw material in the evaporation means is deposited on one side of the substrate. It is being used.

In particular, the thermal evaporation method involves heating the crucible to evaporate the raw material and depositing it on the substrate, and forming a glow discharge of an inert gas (Ar, Kr, The sputtering method of depositing on a substrate is widely used, but the thin film formed by this deposition method has a problem in that the center portion is relatively thicker and the edge portions are thinner, resulting in thickness deviation.

Therefore, when depositing a large-area thin film, a technology for continuously depositing a thin film of uniform thickness along the width direction of the substrate is required. In the prior art, in order to improve the uniformity of thickness in the width direction, a plurality of evaporators are installed and each evaporator Uniformity in the width direction has been improved by controlling the deposition rate.

However, a lot of cost is spent on installing a plurality of evaporators and configuring a system for precise control of each, and even if the evaporation rate is controlled through precise control, there is a limit to reducing the thickness deviation in the width direction.

In addition, as another method to form a thin film of uniform thickness along the width direction of the substrate, a method of depositing by securing a sufficient separation distance between the substrate and the evaporator has been used, but when the separation distance between the evaporator and the substrate is secured, There is a problem in that the size of the equipment increases.

In addition, the rate at which metal raw materials are directed to the chamber wall increases, resulting in a higher raw material loss rate. The flux angle dependence of particles sprayed from a single evaporator is not constant for each process, and if symmetry is not secured, uniformity is compromised. There are problems that cannot be guaranteed.

On the other hand, in prior literature 1, the crucible is formed in an oval shape to secure sufficient accommodation space for raw materials for large-area deposition, and the position of the crucible is linearly moved horizontally and vertically, and a plurality of nozzles are provided in the source passage combined with the crucible. A large-area thin film deposition device that sprays raw materials is posted.

That is, in Prior Document 1, large-area deposition is achieved by heating a crucible containing sufficient raw material, combining it with the source passage, and spraying the raw material using a nozzle provided in the source passage.

However, even in the above case, it is necessary to configure and operate a linear moving part for moving the position of the crucible, a linear lifting part, a plurality of nozzles and source passages provided in the source passage, and a temperature maintenance device to prevent clogging of the nozzle section. It has the problem of increasing costs.

KR 10-2149657 B1

The purpose of the present invention is to measure the thickness distribution before and after deposition on a substrate supplied and recovered in a roll-to-roll method, and to measure the thickness distribution on a deposition induction shield disposed between the substrate and the evaporation means. The aim is to provide a large-area thin film deposition apparatus in which large-area thin film deposition with uniform thickness distribution is achieved by forming an open area based on the results to have a gradient in the amount of deposition material passing according to the thickness distribution in the width direction.

Another object of the present invention is to keep the angle dependence of the particles sprayed from the evaporation means constant in each process, so that the shape of the open area of the shield has a unit shape, and a plurality of such unit shapes are arranged on the shield, thereby forming a continuous large-area thin film. The aim is to provide a large-area thin film deposition apparatus that allows deposition to occur.

Another object of the present invention is to provide a large-area thin film deposition method for producing a continuous large-area thin film using the large-area thin film deposition apparatus described above.

The large-area thin film deposition apparatus according to the present invention includes a supply roller and a recovery roller for supplying and recovering a substrate in a roll-to-roll method, and is disposed on the supply path of the substrate between the supply roller and the recovery roller, and is disposed on the supply path of the substrate before deposition. /A sensor array for measuring the thickness distribution in the width direction of the substrate, a transport means for moving the sensor array along the deposition area to be deposited on the substrate, an evaporation means for evaporating the metal material to be deposited on the substrate, and It is provided between the substrate and the evaporation means and includes a deposition induction shield that allows a gradient of supply of the metal material supplied to the substrate through the open area, and the open area formed in the deposition induction shield has the formula H(x) = K*1/F(x), where x represents the length of the substrate width, K represents the proportionality constant, and F(x) represents the thickness distribution in the width direction of the substrate calculated by the sensor array. , H(x) is characterized by representing the distribution of the width of the open area formed in the deposition induction shield.

The evaporation means is provided with a spray nozzle of a relatively small diameter in the center of the upper surface of the cylindrical body, and an area occupied by metal vapor together with the metal raw material is provided in the inner space of the body. When the body is heated, the metal collected in the area is provided. It is characterized in that the direction of movement of the steam is formed in a random equilibrium state as the steam collides with each other, and then is discharged through the injection hole.

The deposition induction shield includes a base plate formed to have a width and length that includes both the area where the substrate is exposed to the evaporation means, and an open area and a shielded area formed on the base plate to control the amount of passage of the metal vapor. It is characterized in that a plurality of plates are arranged alternately along the longitudinal direction of the base plate.

In another aspect, the large-area thin film deposition method according to the present invention includes a substrate supply step in which a substrate is supplied in a roll-to-roll manner using a supply roller and a recovery roller, and a thin film is deposited by evaporating the metal material to be deposited on the substrate. A first deposition step, a thickness distribution measurement step in which a sensor array is disposed between the supply roller and the recovery roller to measure the thickness distribution in the width direction of the thin film deposited in the first deposition step, and a thickness distribution measurement result in the width direction. Based on this, a shield forming step in which the shape of the open area of the deposition inducing shield provided between the substrate and the evaporation means is determined, and the deposition inducing shield formed through the shield forming step is placed between the substrate and the evaporation means. It includes a second deposition step in which a thin film is deposited by evaporating the metal material to be deposited on the substrate while being supplied, and a substrate recovery step in which the substrate on which the thin film is formed through the second deposition step is recovered by the recovery roller, and the shield forming step. In , the open area formed in the deposition induction shield is formed by the formula H(x) = K*1/F(x), where x represents the length of the width of the substrate, K represents the proportionality constant, and F (x) represents the thickness distribution in the width direction of the substrate calculated by the sensor array, and H(x) represents the distribution of the width of the open area formed in the deposition induction shield.

In the thickness distribution measurement step, while the sensor array is moved by the transfer means, the width direction resonance frequency value of the substrate before deposition and the resonance frequency value of the thin film after deposition are measured, and the difference is calculated to calculate the thickness distribution of the thin film. Do it as

According to the present invention, the supply of substrates is carried out in a roll-to-roll manner, which has the advantage of enabling the continuous production of large-area thin films more easily.

In addition, a sensing unit is placed in the width direction on the supplied substrate to measure the thickness distribution in the width direction before and after thin film deposition, and a shield with an open area according to the measured thickness distribution in the width direction of the thin film is placed to enable vacuum deposition. By doing so, a gradient in supply of deposition material can be achieved.

In other words, the open area formed in the shield allows a relatively small amount of deposition material to pass through the area where the measured thickness distribution is thick, and allows a relatively large amount of deposition material to pass through the area with a thin thickness, resulting in an overall uniform deposition of the deposition material. With this supply, large-area thin film deposition of uniform thickness can be achieved.

In addition, for the thickness gradient deposition as described above, the evaporation means according to the present invention is provided with a region occupied by metal increase inside the main body, and the metal vapors gathered in the region collide with each other and the direction of movement is formed in a random equilibrium state. By allowing the metal material to be discharged through the injection hole formed in the center of the upper surface of the main body, the angle dependence and symmetry of the sprayed metal material can be maintained.

Therefore, the open area shape of the deposition induction shield can be formed into a unit shape, and by arranging a plurality of such unit shapes on the deposition induction shield, there is an advantage in stably producing a large-area thin film with uniform thickness distribution.

1 is a diagram showing the results of measuring the thickness distribution in the width direction of a deposition material deposited on a substrate by an embodiment of the vacuum deposition method according to the present invention.
Figure 2 is a diagram showing an example of a sensor array for measuring the thickness in the width direction of a deposition area deposited on a substrate and a transport means for moving the sensor array.
FIG. 3 is a diagram showing an example of a deposition induction shield to which an open area shape is applied according to the thickness distribution of the deposition area measured in FIG. 2.
Figure 4 is a diagram for explaining an embodiment of the transport means, which is a main component of the present invention, and the moving structure of the sensor array and deposition induction shield transported through the transport means.
FIG. 5 is a diagram for explaining the positional movement of the sensor array and the deposition induction shield made by the transfer means shown in FIG. 4.
Figure 6 is a diagram schematically showing the deposition of a large-area thin film using a deposition induction shield, which is a major component of the present invention.
Figure 7 is a diagram illustrating the distribution of deposition thickness according to the shape of the open area of the deposition induction shield according to the present invention and the resulting thin film uniformization effect.

Hereinafter, some embodiments of the present invention will be described in detail through illustrative drawings. In adding reference numerals to components in each drawing, the same components are given the same reference numerals as much as possible even if they are shown in different drawings. It is listed. Additionally, in the description of the embodiments, if it is determined that specific descriptions of related known configurations or functions impede understanding of the embodiments of the present invention, the descriptions are simplified or omitted.

Figure 1 shows the results of measuring the thickness distribution in the width direction of the deposition material deposited on the substrate by an embodiment of the vacuum deposition method according to the present invention, and Figure 2 shows the measurement of the thickness distribution in the width direction of the deposition area deposited on the substrate. A drawing showing an example of a sensor array and a transport means for moving the sensor array is shown.

Referring to these drawings, in the large-area thin film deposition apparatus according to the present invention, first, the substrate 10 is supplied in a roll-to-roll manner.

For this purpose, the large-area thin film deposition apparatus according to the present invention is equipped with a supply roller 200 and a recovery roller 400, so that the substrate 10 can be continuously supplied at a constant speed.

In addition, an evaporation means 500 capable of reproducing the angle dependence and symmetry of the injected metal vapor is provided on the lower side of the substrate 10 supplied as described above.

Hereinafter, the present embodiment will focus on the case of using the thermal evaporation method, but the present invention is a technology that allows uniform deposition of a thin film through a widthwise gradient in the amount of raw material supplied to the substrate, using a sputtering method. It can also be applied.

In this embodiment, the evaporation means 500 includes an area 540 occupied by a metal raw material and an area 560 occupied by metal vapor in the internal space of the cylindrical body, and the metal vapor is formed at the center of the upper surface of the main body. It is formed to be sprayed through 580).

Accordingly, when the evaporation means 500 is heated, the metal raw materials are formed into metal vapor, collect in the area 560 occupied by the metal vapor, and collide with each other to reach an equilibrium state in which the direction of movement is random. When metal vapor particles reach the injection hole 580, they can be sprayed while maintaining a constant angular distribution.

A plurality of evaporation means 500 having the above characteristics may be provided depending on the supply length of the substrate 10, and may be arranged to maintain a constant interval in consideration of the spraying area.

Meanwhile, the large-area thin film deposition apparatus according to the present invention is equipped with a sensor array 300 to measure the thickness distribution in the width direction of the thin film 20 deposited on the supplied substrate.

The sensor array 300 is arranged to face the deposition surface of the substrate 10, so that a Quartz Crystal Microbalance (QCM) sensor can be applied to measure the resonance frequency, and the width direction thickness of the substrate 10 before deposition. For measurement, sensors are arranged along the width direction length (x) to form a width direction array.

In addition, the sensor array 300 formed as described above moves along the thin film 20 deposited on the substrate 10 by the evaporation means 500 and changes the width direction thickness of the substrate 10 before deposition and the thin film after deposition. Through the width direction thickness measurement in (20), the thickness distribution of the width direction length (x) can be determined.

To this end, the sensor array 300 can be mounted on a transfer means 700 that allows it to pass through the deposition area while moving at a speed corresponding to the process speed during deposition along the supply direction of the substrate 10.

In detail, the transfer means 700 is for moving the sensor array 300 along the supply direction of the substrate 10, and is arranged long along the transfer direction of the substrate 10 to move the sensor array 300. A first transfer guide 710 that guides the path and the sensor array 300 are mounted, and the sensor array 300 is moved along the first transfer guide 710 by rotation of the first transfer motor 720. It includes a first transfer axis 740 for linear movement and a slider 730 that slides along the first transfer axis 740.

That is, the sensor array 300 is installed on the slider 730 and can be moved along the first transfer guide 710 according to the rotation speed and direction of the first transfer motor 720, and the deposition process The thickness distribution of the width direction (x) can be measured while moving along the deposition area in proportion to the speed.

Meanwhile, the transfer means 700 includes a second transfer motor 750, a second transfer shaft 760, and a second transfer motor 750 for selectively positioning the sensor array 300 with the above function on the lower side of the substrate 10. An auxiliary guide 770 is further included.

And, although not shown in the drawing, the second transfer shaft 760 is formed in the form of a ball screw, and a sliding block through which a ball screw penetrates is provided at the lower part of the first transfer guide 710 to perform the second transfer. The first transfer guide 710 may be slidably moved by rotation of the motor 750.

Accordingly, the sensor array 300 can be positioned parallel to the substrate 10 by rotating the second transfer motor 750, and a position detection sensor for this can be further provided.

In addition, the second transfer guide 760 and the second auxiliary guide 770 are further provided with a deposition induction shield 600, which will be described below, and are selectively installed on the lower side of the substrate 10 together with the sensor array 300. The position may be moved, and this will be explained in more detail with reference to the attached drawings below.

Meanwhile, the deposition thickness of the thin film 20 measured using the sensor array 300 and the transfer means 700 is proportional to the difference in resonance frequency before and after deposition measured through the sensor array 300, so according to the present invention In the large-area thin film deposition apparatus according to the present invention, the thickness distribution in the width direction is calculated by measuring the difference in resonance frequency in the width direction before and after deposition, and based on this, a gradient in the supply of the metal material supplied to the substrate 10 can be created.

In detail, when deposition is performed through the evaporation means 500 on the substrate 10 having a width direction length (x) as shown in (a) of FIG. 1, as shown in (b) of FIG. 1 Likewise, the thickness distribution in the width direction is thick in the center and thin at the left and right edges.

Therefore, in the large-area thin film deposition apparatus according to the present invention, the deposition induction shield 600 is disposed between the substrate 10 and the evaporation means 500 so that the metal material supplied to the substrate 10 has a width direction (x) ) is controlled so that there can be a difference in supply amount according to the thickness distribution.

For more detailed explanation, FIG. 3 is a diagram showing an example of a deposition induction shield, which is a main component of the present invention.

Referring to the drawing, the deposition induction shield 600 allows metal vapor to pass through the base plate 620, which is formed to have a width and length that includes both the area where the substrate 10 is exposed to the evaporation means 500. Open areas 640 and shielded areas 660 for controlling the volume are formed by alternating with each other.

In addition, the open area 640 is designed to have a unit shape for a gradient of metal material supplied to the substrate 10 between the substrate 10 and the evaporation means 500.

To this end, the open area 640 has a width-length distribution so that the supply amount of thick areas can be reduced and the supply amount of thin areas can be increased based on the thickness distribution measurement results in the width direction before deposition measured by the sensor array 300. It is calculated and designed.

Therefore, the open area 640 formed in the deposition induction shield 600 has a shape according to the formula H(x) = K*1/F(x), where x is the length of the width of the substrate 10. , K represents the proportionality constant, F(x) represents the thickness distribution in the width direction of the substrate 10 measured by the sensor array 300, and H(x) represents the open thickness formed on the deposition induction shield 600. Shows the distribution of area 640 width.

Meanwhile, the deposition induction shield 600, in which the shape of the open area 640 is designed as described above, is transferred to a position by the transfer means 700 and is a large-area thin film with a supply gradient of the metal material supplied to the substrate 10. Allows deposition to occur.

FIG. 4 is a diagram illustrating an example of a transport means, which is a major component of the present invention, and a moving structure of a sensor array and a deposition induction shield transported through the transport means, and FIG. 5 shows a transport means shown in FIG. 4. A drawing is shown to explain the positional movement of the sensor array and the deposition induction shield.

Referring to these drawings together with FIG. 2 described above, the transfer means 700 transfers the sensor array 300 and the deposition induction shield 600 to a substrate ( 10) It is possible to selectively move the position to the lower side.

To this end, in this embodiment, the transfer means 700 moves the sensor array 300 and the deposition induction shield 600 in a direction crossing the supply direction of the substrate 10, and a second transfer axis 760 for this ) and a second transfer motor 750.

As described above, a slide block through which the second transfer shaft 760 passes is formed on the lower side of the first transfer guide 710, and the same slide block is formed on the deposition induction shield 600.

That is, the first transfer guide 710 on which the sensor array 300 is installed is provided on the second transfer axis 760 to be spaced apart from the deposition induction shield 600 by at least the width direction of the substrate 10. When the second transfer motor 750 rotates, it can be moved while maintaining the spaced apart distance.

Therefore, as shown in (a) of FIG. 6, when the deposition guidance shield 600 is located on the lower side of the substrate 10, the first transfer guide 710 on which the sensor array 300 is installed is the deposition guidance shield. While maintaining the distance from 600, it becomes further away from the substrate 10, and when the sensor array 300 is located on the lower side of the substrate 10 as shown in (b) of FIG. 6, deposition is induced. The shield 600 is positioned further away from the substrate.

Hereinafter, a method for depositing a large-area thin film using a large-area thin film deposition apparatus having the above configuration will be described.

In the large-area thin film deposition method according to the present invention, first, a substrate supply step is performed in which a substrate is supplied in a roll-to-roll manner using the supply roller 200 and the recovery roller 400.

In the substrate supply step, the substrate 10 wound on the supply roller 200 is released at a constant speed and a constant tension is maintained until it is wound on the recovery roller 400. Although not shown, an auxiliary roller for this is further used. It can be provided.

When the substrate 10 is supplied as described above, a first deposition step is performed in which a thin film is deposited by evaporating a metal material on the substrate 10 through the evaporation means 500.

The first deposition step is a pre-deposition process performed through the evaporation means 500 while ensuring the angle dependence and symmetry of the metal vapor, and the evaporation is performed by pre-depositing a thin film in a certain area on the substrate 10 without the deposition induction shield 600. This is done to determine the degree of non-uniformity of the deposition thickness distribution according to the means 500.

Meanwhile, after the first deposition step is performed as described above, a thickness measurement step is performed to measure the thickness distribution in the width direction of the substrate 10 through the sensor array 300.

For this purpose, in the thickness measurement step, the first transfer guide 710 on which the sensor array 300 is installed is located on the lower side of the substrate 10 as shown in (b) of FIG. 6 and the thin film deposited through the first deposition step is It moves along, and at this time, the rotation speed of the first transfer motor 720 is controlled so that the sensor array 300 can move at a speed corresponding to the deposition process speed.

Here, the value measured by the sensor array 300 measures the difference in resonance frequency by the QCM sensor before and after deposition, and does not measure the actual thickness distribution, but the thickness distribution can be calculated based on this.

Meanwhile, when the thickness distribution of the thin film is calculated as above, the shape of the open area 640 of the deposition induction shield 600 provided between the substrate 10 and the evaporation means 500 is determined based on the width direction thickness distribution measurement results. This determined shield formation step is performed.

In the shield forming step, as described above, the open area 640 is formed into a unit shape by the formula H(x) = K*1/F(x), and the open area 640 of this unit shape and the The shielding areas 660 are arranged alternately along the base plate 620. (Here, x is the length of the width of the substrate, K is the proportionality constant, F(x) is the thickness distribution in the width direction of the substrate calculated by the first and second sensor arrays, and H(x) is the open space formed on the deposition induction shield. represents the distribution of area widths)

When the deposition induction shield 600 is formed through the shield formation step, the deposition induction shield 600 is installed on the second transfer axis 760 and the second auxiliary guide 770, and then the substrate 10 and the evaporation means A deposition induction shield 600 is disposed between 500 as shown in (a) of FIG. 6, and a second deposition step is performed in which a thin film is deposited while evaporating the metal material to be deposited along with the supply of the substrate 10.

In the second deposition step, the amount of metal vapor passing through the open area 640 can be controlled to be discharged uniformly along the width direction by the deposition induction shield 600 formed as described above, and thus the substrate The thickness of the thin film deposited in (10) can be formed to be constant.

Figure 6 is a diagram schematically showing the deposition of a large-area thin film using the deposition guide shield, which is a major component of the present invention, and Figure 7 shows the deposition thickness distribution according to the open area shape of the deposition guide shield according to the present invention. A drawing is shown to explain the resulting thin film uniformization effect.

Referring to these drawings, the metal vapor deposited on the substrate 10 through the second deposition step is gradiented by the shape of the open area 640 of the deposition induction shield 600, thereby forming a thin film of uniform thickness. make it possible

In detail, referring to (a) of FIG. 7, as described above, the open area 640 is narrow at the center and at the edges according to the thickness distribution F(x) in the width direction deposited without the deposition guide shield 600. is formed in a relatively wide shape.

Therefore, the overall width distribution H(x) of the open area 640 is narrow at the center and wide at the edges, reducing the amount of metal vapor supplied through the center and reducing the amount of metal vapor supplied through the edges. The amount can be increased.

On the other hand, when the deposition induction shield 600 with the open area 640 as described above is disposed between the substrate 10 and the evaporation means 500, the deposition induction shield ( The thickness distribution in the width direction of the thin film formed without 600 (indicated by a dashed line) is deposited in a thickness gradient according to the distribution of the width of the open area 640 (indicated by a one-dot chain line), resulting in a uniform thickness distribution in the width direction (indicated by a solid line) ) The second deposition step can be performed while having.

In addition, the substrate 10 on which the thin film is formed by the second deposition step is wound around the recovery roller 400 through the substrate recovery step, and as the second deposition step is continuously performed, the large-area thin film is continuously and stably formed. can be produced

Meanwhile, in the process of performing the second deposition step, when it is desired to check the change in the thickness distribution in the width direction of the thin film currently being deposited, the second deposition step is stopped and the sensor array ( The thickness measurement step can be performed by relocating 300) to the lower side of the substrate 10.

That is, since process variables such as temperature conditions, transfer speed of the substrate 10, and injection amount of the evaporation means 500 may occur while performing a repeated thin film deposition process, the thickness measurement step may be performed periodically. Based on this, process variables can be checked and maintenance can be performed.

In addition, the result of the thickness measurement step performed as described above can be stored in a DB along with the type of substrate, process, and design value of the open area 640 of the deposition induction shield 600, and then a new substrate 10 is installed. When a new work is performed, the existing deposition induction shield 600 can be recycled by matching the result of the thickness measurement step in the stored DB.

On the other hand, when there is no matching data in the DB stored after performing the thickness measurement step during a new work, the deposition induction shield 600 is applied with the shape of another open area 640 through the thickness measurement step and the shield formation step. ) is formed, and a second deposition step using this can be performed, and the resulting design value of the open area 640 of the deposition induction shield is additionally stored in the DB along with the work information.

10............. Substrate 200............. Supply roller
320......... First sensor array 340............ Second sensor array
400............. Recovery roller 500............ Evaporation means
600.......... Deposition induction shield 620........ Base plate
640.......... Open area 660............ Shielded area
700............. means of transportation

Claims (5)

Supply roller and recovery roller for supplying and recovering substrates in a roll-to-roll manner;
A sensor array disposed on the supply path of the substrate between the supply roller and the recovery roller for measuring the thickness distribution in the width direction of the substrate before and after deposition;
Transfer means for moving the sensor array along a deposition area where the sensor array is deposited on the substrate;
Evaporation means for evaporating the metal material to be deposited on the substrate; and
It is provided between the substrate and the evaporation means and includes a deposition induction shield that allows a gradient of supply of the metal material supplied to the substrate through the open area,
The open area formed in the deposition induction shield is,
Formed by the formula H(x) = K*1/F(x),
Here, x represents the length of the substrate width, K represents the proportionality constant, F(x) represents the thickness distribution in the width direction of the substrate calculated by the sensor array, and H(x) is the open area formed on the deposition induction shield. A large-area thin film deposition device characterized by a width distribution.
The method of claim 1, wherein the evaporation means is:
A relatively small diameter nozzle is provided at the center of the upper surface of the cylindrical body,
In the inner space of the main body, an area occupied by metal vapor along with metal raw materials is provided,
When the main body is heated, the metal vapors gathered in the area collide with each other, forming a random equilibrium state with the direction of movement, and then being discharged through the injection hole.
The method of claim 2, wherein the deposition induction shield includes:
A base plate formed to have a width and length that includes all of the area where the substrate is exposed to the evaporation means, and
A large-area thin film deposition apparatus, characterized in that a plurality of open areas and shielded areas formed on the base plate to control the amount of passage of the metal vapor are alternately arranged along the longitudinal direction of the base plate.
A substrate supply step in which a substrate is supplied in a roll-to-roll manner using a supply roller and a recovery roller;
A first deposition step in which a thin film is deposited by evaporating the metal material to be deposited on the substrate;
A thickness distribution measurement step of measuring the width-wise thickness distribution of the thin film deposited in the first deposition step by placing a sensor array between the supply roller and the recovery roller;
A shield forming step in which an open area shape of a deposition induction shield provided between the substrate and an evaporation means is determined based on the width direction thickness distribution measurement results;
A second deposition step in which the deposition induction shield formed through the shield forming step is placed between the substrate and the evaporation means, and then a thin film is deposited by evaporating the metal material to be deposited on the substrate while supplying the substrate; And
It includes a substrate recovery step in which the substrate on which the thin film is formed through the second deposition step is recovered by the recovery roller,
In the shield formation step,
The open area formed in the deposition induction shield is,
Formed by the formula H(x) = K*1/F(x),
Here, x represents the length of the width of the substrate, K represents the proportionality constant, F(x) represents the thickness distribution in the width direction of the substrate calculated by the sensor array, and H(x) represents the open space formed on the deposition induction shield. A large-area thin film deposition method characterized by showing distribution of area widths.
The method of claim 4, wherein in the thickness distribution measurement step,
Large-area thin film deposition, wherein the sensor array is moved by a transport means, measuring the resonance frequency value in the width direction of the substrate before deposition and the resonance frequency value of the thin film after deposition, and calculating the difference between them to calculate the thickness distribution of the thin film. method.

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