KR20230138475A - 마이크로리소그래피 투영 노광 장치에서 광학 요소를가열하는 방법 및 광학 시스템 - Google Patents

마이크로리소그래피 투영 노광 장치에서 광학 요소를가열하는 방법 및 광학 시스템 Download PDF

Info

Publication number
KR20230138475A
KR20230138475A KR1020237026775A KR20237026775A KR20230138475A KR 20230138475 A KR20230138475 A KR 20230138475A KR 1020237026775 A KR1020237026775 A KR 1020237026775A KR 20237026775 A KR20237026775 A KR 20237026775A KR 20230138475 A KR20230138475 A KR 20230138475A
Authority
KR
South Korea
Prior art keywords
exposure apparatus
projection exposure
heating
optical element
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237026775A
Other languages
English (en)
Korean (ko)
Inventor
디르크 헬베크
Original Assignee
칼 짜이스 에스엠테 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 짜이스 에스엠테 게엠베하 filed Critical 칼 짜이스 에스엠테 게엠베하
Publication of KR20230138475A publication Critical patent/KR20230138475A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G03F7/70504—Optical system modelling, e.g. lens heating models
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020237026775A 2021-02-10 2021-11-08 마이크로리소그래피 투영 노광 장치에서 광학 요소를가열하는 방법 및 광학 시스템 Pending KR20230138475A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102021201258.2A DE102021201258A1 (de) 2021-02-10 2021-02-10 Verfahren zum Heizen eines optischen Elements in einer mikrolithographischen Projektionsbelichtungsanlage, sowie optisches System
DE102021201258.2 2021-02-10
PCT/EP2021/080878 WO2022171321A1 (de) 2021-02-10 2021-11-08 Verfahren zum heizen eines optischen elements in einer mikrolithographischen projektionsbelichtungsanlage, sowie optisches system

Publications (1)

Publication Number Publication Date
KR20230138475A true KR20230138475A (ko) 2023-10-05

Family

ID=78676547

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237026775A Pending KR20230138475A (ko) 2021-02-10 2021-11-08 마이크로리소그래피 투영 노광 장치에서 광학 요소를가열하는 방법 및 광학 시스템

Country Status (6)

Country Link
US (1) US12353141B2 (enExample)
JP (1) JP2024506046A (enExample)
KR (1) KR20230138475A (enExample)
CN (1) CN116830044A (enExample)
DE (1) DE102021201258A1 (enExample)
WO (1) WO2022171321A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4449204A1 (en) * 2021-12-14 2024-10-23 ASML Netherlands B.V. Thermal control systems, models, and manufacturing processes in lithography
WO2024110341A1 (en) * 2022-11-22 2024-05-30 Carl Zeiss Smt Gmbh Projection exposure apparatus with manipulators
DE102023206859A1 (de) * 2023-07-19 2025-01-23 Carl Zeiss Smt Gmbh Spiegelsystem, Verfahren zum Betreiben eines Spiegelsystems, Projektionsobjektiv für eine mikrolithografische Projektionsbelichtungsanlage, Computerprogrammprodukt

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7061579B2 (en) 2003-11-13 2006-06-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4666908B2 (ja) * 2003-12-12 2011-04-06 キヤノン株式会社 露光装置、計測方法及びデバイス製造方法
US7375794B2 (en) * 2004-08-04 2008-05-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20160127160A (ko) 2007-10-09 2016-11-02 칼 짜이스 에스엠테 게엠베하 광학 소자의 온도 제어 장치
DE102008002403A1 (de) 2008-06-12 2009-12-17 Carl Zeiss Smt Ag Verfahren zum Herstellen einer Mehrlagen-Beschichtung, optisches Element und optische Anordnung
TWI501046B (zh) * 2010-07-30 2015-09-21 卡爾蔡司Smt有限公司 超紫外線曝光裝置
KR101529807B1 (ko) * 2011-01-20 2015-06-17 칼 짜이스 에스엠티 게엠베하 투영 노광 도구를 조작하는 방법
DE102012216284A1 (de) 2011-09-27 2013-03-28 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
DE102013204427A1 (de) 2013-03-14 2014-09-18 Carl Zeiss Smt Gmbh Anordnung zur thermischen Aktuierung eines Spiegels, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102013219808A1 (de) * 2013-09-30 2015-04-02 Heraeus Quarzglas Gmbh & Co. Kg Spiegelblank für EUV Lithographie ohne Ausdehnung unter EUV-Bestrahlung
DE102013219986A1 (de) * 2013-10-02 2015-04-02 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie
DE102014216631A1 (de) * 2014-08-21 2016-02-25 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage, Spiegelmodul hierfür, sowie Verfahren zum Betrieb des Spiegelmoduls
DE102014223750A1 (de) * 2014-11-20 2016-05-25 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit mindestens einem Manipulator
JP2017538156A (ja) * 2014-12-02 2017-12-21 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ方法及び装置
US10444643B2 (en) * 2017-03-24 2019-10-15 Nikon Research Corporation Of America Lithographic thermal distortion compensation with the use of machine learning
DE102017205405A1 (de) 2017-03-30 2018-10-04 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
NL2020353A (en) * 2017-04-11 2018-10-17 Asml Netherlands Bv Lithographic apparatus
DE102017207862A1 (de) 2017-05-10 2017-07-06 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Halbleiterlithographie mit einer Heizlichtquelle und Verfahren zum Heizen einer Komponente der Projektionsbelichtungsanlage
DE102018208653A1 (de) 2018-05-30 2019-12-05 Carl Zeiss Smt Gmbh Verfahren sowie Vorrichtung zum Bestimmen des Erwärmungszustandes eines Spiegels in einem optischen System
WO2020002143A1 (en) * 2018-06-25 2020-01-02 Asml Netherlands B.V. Wavefront optimization for tuning scanner based on performance matching
DE102019202531A1 (de) * 2019-02-25 2020-02-20 Carl Zeiss Smt Gmbh Optisches Korrekturelement, Projektionsbelichtungsanlage für die Halbleiterlithographie mit einem Korrekturelement und Verfahren zur Auslegung eines Korrekturelementes
DE102019219289A1 (de) 2019-12-11 2021-06-17 Carl Zeiss Smt Gmbh Optisches System, sowie Heizanordnung und Verfahren zum Heizen eines optischen Elements in einem optischen System
WO2022008174A1 (en) * 2020-07-09 2022-01-13 Asml Netherlands B.V. Method for adjusting a patterning process
WO2022008198A1 (en) * 2020-07-09 2022-01-13 Asml Netherlands B.V. Motion control using an artificial neural network
DE102020209141A1 (de) 2020-07-21 2022-01-27 Carl Zeiss Smt Gmbh Verfahren zum Betreiben eines optischen Systems für die Mikrolithographie, sowie optisches System
EP4193222A1 (en) 2020-08-07 2023-06-14 Carl Zeiss SMT GmbH Mirror, in particular for a microlithographic projection exposure apparatus
DE102021100995A1 (de) 2021-01-19 2022-07-21 Carl Zeiss Smt Gmbh Verfahren sowie Vorrichtung zum Bestimmen des Erwärmungszustandes eines optischen Elements in einem optischen System
WO2023241849A1 (de) * 2022-06-14 2023-12-21 Carl Zeiss Smt Gmbh Verfahren zum heizen eines optischen elements sowie optisches system

Also Published As

Publication number Publication date
WO2022171321A1 (de) 2022-08-18
CN116830044A (zh) 2023-09-29
DE102021201258A1 (de) 2022-08-11
JP2024506046A (ja) 2024-02-08
US12353141B2 (en) 2025-07-08
US20230350312A1 (en) 2023-11-02

Similar Documents

Publication Publication Date Title
US12353141B2 (en) Method for heating an optical element in a microlithographic projection exposure apparatus and optical system
JP3368091B2 (ja) 投影露光装置及びデバイスの製造方法
CN107589635B (zh) 具有至少一个操纵器的投射曝光设备及操作其的方法
KR101809343B1 (ko) 마이크로리소그래픽 장치
JP5815987B2 (ja) 露光装置およびデバイス製造方法
KR102250672B1 (ko) 광학 이미징 장치의 모델 기반 제어
US9348235B2 (en) Exposure apparatus and method of manufacturing device
KR102486280B1 (ko) 마이크로리소그래피용 광학 시스템의 이미징 특성을 변경하기 위한 방법 및 디바이스
KR102888704B1 (ko) 광학 시스템에서 거울의 가열 상태를 결정하는 방법 및 디바이스
TWI886303B (zh) 用於計算與組件相關聯的空間映射的方法及裝置
US20220373899A1 (en) Projection exposure apparatus with a thermal manipulator
JP5671621B2 (ja) 調整機能を最適化した投影露光装置
US20260093089A1 (en) Method for operating an optical system, and optical system
CN111758076A (zh) 用于预测投影系统中的像差的测量装置和方法
US12566092B2 (en) Method and device for determining the heating state of an optical element in an optical system
US20260056476A1 (en) Method for evaluating measurement values of an aberration of a projection lens
KR20250008126A (ko) 광학 요소를 가열하는 방법, 및 광학 시스템
US20250102920A1 (en) Method for heating an optical element, and optical system
US12339592B2 (en) Method for thermo-mechanical control of a heat sensitive element and device for use in a lithographic production process
TWI437379B (zh) 照明系統及微影裝置
JP3632264B2 (ja) X線投影露光装置
CN121153008A (zh) 用于操作微光刻投射曝光设备中的固态致动器的方法
CN116830003A (zh) 光学系统和用于操作光学系统的方法
JP7457678B2 (ja) 露光装置、露光方法および物品製造方法
JP2022089012A (ja) 露光装置、露光方法および物品の製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000