KR20230136609A - 기판의 처리방법 및 상기 처리방법을 포함하는 실리콘디바이스의 제조방법 - Google Patents
기판의 처리방법 및 상기 처리방법을 포함하는 실리콘디바이스의 제조방법 Download PDFInfo
- Publication number
- KR20230136609A KR20230136609A KR1020237026098A KR20237026098A KR20230136609A KR 20230136609 A KR20230136609 A KR 20230136609A KR 1020237026098 A KR1020237026098 A KR 1020237026098A KR 20237026098 A KR20237026098 A KR 20237026098A KR 20230136609 A KR20230136609 A KR 20230136609A
- Authority
- KR
- South Korea
- Prior art keywords
- silicon
- etching
- film
- group
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H01L21/30604—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H01L21/823412—
-
- H01L29/0673—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
- H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0128—Manufacturing their channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
- H10P50/644—Anisotropic liquid etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021020010 | 2021-02-10 | ||
| JPJP-P-2021-020010 | 2021-02-10 | ||
| JPJP-P-2021-102055 | 2021-06-18 | ||
| JP2021102055 | 2021-06-18 | ||
| JPJP-P-2021-140036 | 2021-08-30 | ||
| JP2021140036 | 2021-08-30 | ||
| PCT/JP2022/004803 WO2022172907A1 (ja) | 2021-02-10 | 2022-02-08 | 基板の処理方法、および該処理方法を含むシリコンデバイスの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20230136609A true KR20230136609A (ko) | 2023-09-26 |
Family
ID=82837554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237026098A Pending KR20230136609A (ko) | 2021-02-10 | 2022-02-08 | 기판의 처리방법 및 상기 처리방법을 포함하는 실리콘디바이스의 제조방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240112917A1 (https=) |
| JP (1) | JPWO2022172907A1 (https=) |
| KR (1) | KR20230136609A (https=) |
| TW (1) | TW202246580A (https=) |
| WO (1) | WO2022172907A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2024166976A1 (https=) | 2023-02-10 | 2024-08-15 | ||
| WO2024190648A1 (ja) * | 2023-03-14 | 2024-09-19 | 三菱ケミカル株式会社 | エッチング組成物、エッチング組成物の製造方法、エッチング方法、半導体デバイスの製造方法及びゲートオールアラウンド型トランジスタの製造方法 |
| TW202526528A (zh) * | 2023-09-01 | 2025-07-01 | 日商德山股份有限公司 | 半導體用處理液，及作為低毒性半導體用處理液使用之方法 |
| CN118995223A (zh) * | 2024-07-18 | 2024-11-22 | 湖北兴福电子材料股份有限公司 | 硅锗/硅叠层中硅的高性能选择性蚀刻液 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006054363A (ja) | 2004-08-13 | 2006-02-23 | Mitsubishi Gas Chem Co Inc | シリコン微細加工に用いる異方性エッチング剤組成物及びエッチング方法 |
| JP2010141139A (ja) | 2008-12-11 | 2010-06-24 | Shinryo Corp | シリコン基板のエッチング液およびシリコン基板の表面加工方法 |
| JP2012227304A (ja) | 2011-04-19 | 2012-11-15 | Hayashi Junyaku Kogyo Kk | エッチング液組成物およびエッチング方法 |
| JP2019050364A (ja) | 2017-08-25 | 2019-03-28 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | 半導体デバイスの製造中にシリコン−ゲルマニウム／シリコン積層体からシリコン−ゲルマニウム合金に対してシリコンを選択的に除去するためのエッチング液 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5917861B2 (ja) * | 2011-08-30 | 2016-05-18 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法 |
| US20140004701A1 (en) * | 2012-06-27 | 2014-01-02 | Rohm And Haas Electronic Materials Llc | Texturing of monocrystalline semiconductor substrates to reduce incident light reflectance |
| TWI675905B (zh) * | 2015-11-14 | 2019-11-01 | 日商東京威力科創股份有限公司 | 使用稀釋的氫氧化四甲基銨處理微電子基板的方法 |
| WO2020145002A1 (ja) * | 2019-01-10 | 2020-07-16 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
| JP2020126997A (ja) * | 2019-02-05 | 2020-08-20 | 株式会社トクヤマ | シリコンエッチング液及び該エッチング液を用いたシリコンデバイスの製造方法 |
-
2022
- 2022-02-08 WO PCT/JP2022/004803 patent/WO2022172907A1/ja not_active Ceased
- 2022-02-08 KR KR1020237026098A patent/KR20230136609A/ko active Pending
- 2022-02-08 JP JP2022580628A patent/JPWO2022172907A1/ja active Pending
- 2022-02-08 US US18/274,856 patent/US20240112917A1/en not_active Abandoned
- 2022-02-09 TW TW111104718A patent/TW202246580A/zh unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006054363A (ja) | 2004-08-13 | 2006-02-23 | Mitsubishi Gas Chem Co Inc | シリコン微細加工に用いる異方性エッチング剤組成物及びエッチング方法 |
| JP2010141139A (ja) | 2008-12-11 | 2010-06-24 | Shinryo Corp | シリコン基板のエッチング液およびシリコン基板の表面加工方法 |
| JP2012227304A (ja) | 2011-04-19 | 2012-11-15 | Hayashi Junyaku Kogyo Kk | エッチング液組成物およびエッチング方法 |
| JP2019050364A (ja) | 2017-08-25 | 2019-03-28 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | 半導体デバイスの製造中にシリコン−ゲルマニウム／シリコン積層体からシリコン−ゲルマニウム合金に対してシリコンを選択的に除去するためのエッチング液 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022172907A1 (ja) | 2022-08-18 |
| JPWO2022172907A1 (https=) | 2022-08-18 |
| TW202246580A (zh) | 2022-12-01 |
| US20240112917A1 (en) | 2024-04-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |