KR20230107847A - Vacuum Process Systems, Support Structures, and Methods for Transporting Substrates - Google Patents

Abstract

The present invention provides a first vacuum chamber 105 having a first gas pressure, a second vacuum chamber 106 having a second gas pressure, and a gap between the first vacuum chamber 105 and the second vacuum chamber 106. A vacuum process system (100) for processing a substrate, comprising a gas separation unit (120). A gas separation unit provides a connection between the first vacuum chamber and the second vacuum chamber. The gas separation unit 120 is configured to interact with one or more support structures 110 to minimize the flow of gas from the first vacuum chamber 105 to the second vacuum chamber 106 and/or vice versa. .

Description

Vacuum Process Systems, Support Structures, and Methods for Transporting Substrates

[0001] The present disclosure relates to vacuum process systems, particularly coating systems, and more particularly to the transport of substrates by support structures, eg, holding and/or transport structures, in a vacuum process system.

[0002] Techniques for depositing layers onto a substrate include, for example, sputtering, thermal evaporation, and chemical vapor deposition. For example, layers of material may be deposited onto the substrate, such as a layer of conductive material or insulating material. Coated materials can be used in many applications and in many technical areas. One application is in the area of microelectronics, for example, for the creation of semiconductor components, for example. Substrates for displays are also often coated by physical vapor deposition (PVD), eg by a sputtering method, or by chemical vapor deposition (CVD). Additional applications are insulator plates, substrates with TFT, color filters, battery components and the like.

[0003] Process systems providing multiple vacuum chambers with different conditions are used for coating of material on substrates. Carriers are used to transport substrates through process systems. Substrates are clamped or inserted into carriers, generally provided in the form of frames, loaded into the system, transported through the system, processed in the system and ejected from the system again.

[0004] Compared to the carrier, the transported substrates are thinner, and as a result, various problems arise during transport that may arise mainly in connection with various conditions in vacuum chambers.

[0005] In view of the foregoing, it is therefore advantageous to provide improved devices, systems, and methods to overcome at least some of the critical problems in the state of the art.

[0006] In view of the above, a vacuum process system for processing a substrate is provided. The vacuum process system includes a first vacuum chamber having a first gas pressure, a second vacuum chamber having a second gas pressure, and a gas separation unit between the first vacuum chamber and the second vacuum chamber. A gas separation unit provides a connection between the first vacuum chamber and the second vacuum chamber. The gas separation unit is configured to interact with one or more support structures to minimize the flow of gas from the first vacuum chamber to the second vacuum chamber and/or vice versa.

[0007] According to one aspect, a support structure for transporting a substrate in a vacuum chamber is provided. The support structure includes a body configured to hold the substrate and a transport device configured to transport the body in a transport direction T in the vacuum process system. The body is further configured to minimize the flow of gas in the region of the gas separation unit in the vacuum process system.

[0008] According to a further aspect, a method for transporting a substrate in a vacuum process system is provided. The method includes providing a vacuum process system according to embodiments described herein, providing one or more support structures, and transporting a substrate by the one or more support structures through the vacuum process system in at least one transport direction. It includes steps to

[0009] Embodiments are also directed to devices for performing the disclosed method and include parts of the device for performing each aspect of the described method. These aspects of the method may be performed by hardware components, a computer programmed using suitable software, any combination of the two, or in other ways. Additionally, embodiments according to the present disclosure are also directed to methods for operating the described devices. It includes aspects of a method for executing each function of the device.

[0010] In order to understand the above features of the present disclosure in detail, a more specific description of the present disclosure briefly summarized above may be provided with reference to embodiments. The accompanying drawings relate to embodiments of the present disclosure and are described below:
1A and 1B schematically depict top views of a vacuum process system according to embodiments described herein;
2 schematically illustrates a cross-section of a vacuum process system according to embodiments described herein;
3 schematically illustrates a top view of a vacuum process system according to embodiments described herein;
4 schematically illustrates a cross-section of a vacuum process system according to embodiments described herein;
5 shows a side view of a support structure according to embodiments described herein;
6 schematically illustrates a top view of a vacuum process system according to embodiments described herein;
7 schematically illustrates a top view of a vacuum process system according to embodiments described herein;
8 shows a flowchart of a method according to embodiments described herein.

[0011] Reference will now be made in detail to various embodiments of the present disclosure, examples of which are illustrated in the drawings. In the following description of the drawings, like reference numbers indicate like components. In general, only differences relating to individual embodiments are described. Each example is provided by way of explanation of the disclosure and is not intended as limitation of the disclosure. Moreover, features illustrated or described as part of one embodiment may be applied to, or in conjunction with, other embodiments to yield a further embodiment. The description is intended to cover such modifications and variations.

[0012] Where the term “support structure” is used in the following, these paragraphs refer to both one support structure or several support structures. In particular, multiple support structures can be connected in series, that is, multiple support structures can be aligned in a row and/or coupled back and forth to each other.

[0013] The present disclosure relates to vacuum process systems and support structures for enhancing gas separation within or between vacuum chambers. In particular, in switching between vacuum chambers of a vacuum process system, flows of gas may occur, for example due to pressure or partial pressure differences. This may be due to the fact that the substrates are thinner than the carriers that carry them through the system. This creates a large cross section through which gas can flow from one vacuum chamber to an adjacent vacuum chamber and adversely affect individual vacuum conditions. The disclosed vacuum process systems and devices and corresponding methods prevent or minimize the flow of such gases and provide improved systems, devices and methods.

[0014] Moreover, the present disclosure relates to a vacuum process system and support structure for implementing high gas separating factors in a vacuum system. For example, the described vacuum process system and/or the described support structure for transporting substrates can achieve gas separation factors of 50 to 1000, depending on the length and number of gas separation units in the transport direction.

[0015] Embodiments described herein include, for example, gas separation between two vacuum chambers with different partial pressures of gas mixtures, for example between two process chambers, and with different total pressures. It may relate to both gas separation between atmospheric areas, for example on gas separating locks, for example in system and vacuum chambers, between areas. can

[0016] For example, gas separation can essentially separate gases used in vacuum chambers, eg process chambers, eg can separate process gases from one another. Different gas mixtures may be present in each vacuum chamber. This can result in different partial pressures of gases or gas mixtures, which can lead to a flow of gas between the vacuum chambers, especially when a substrate is transported from one vacuum chamber to another. The vacuum chambers may be provided closed to each other. For example, a substrate may be transported by opening and closing vacuum chambers. Or, according to the present invention, the opening and closing of the vacuum chambers can be omitted.

[0017] For example, a “reactive sputtering process” using oxygen and argon as process gases may occur in the first process chamber. In the second process chamber, for example, a (pure metal) sputtering process may occur without oxygen and with argon. The oxygen partial pressure in the second process chamber may be kept low by gas separation. Thus, initialization of the reaction process or contamination of the second process chamber by oxygen can be prevented there.

[0018] Moreover, for example, gas separation may, in essence, function to change the overall pressure of a vacuum process system in stages. For example, the total pressure can be decreased or increased from atmospheric to high vacuum and vice versa via a dynamic lock vacuum process system. Gas separations or stages can reduce the total pressure, eg atmospheric pressure, from atmospheric conditions to approximate vacuum and through intermediate vacuum to high vacuum. In a dynamic lock vacuum process system, transitions between individual regions and/or vacuum chambers may be continuous, ie, closing of individual regions and/or vacuum chambers need not be provided. Rather, the regions and/or vacuum chambers may be separated from each other by a gas separation unit. In other words, the dynamic lock vacuum process system may include an opening (without a closing device) at each of the transitions between the different regions and/or vacuum chambers.

[0019] A vacuum process system 100 for processing a substrate is provided according to embodiments that can be combined with other embodiments described herein and as shown in FIG. 1A by way of example. The vacuum process system 100 includes a first vacuum chamber 105 having a first gas pressure, a second vacuum chamber 106 having a second gas pressure, and a first vacuum chamber 105 and a second vacuum chamber 106. It includes a gas separation unit 120 between. The gas separation unit 120 provides a connection between the first vacuum chamber and the second vacuum chamber. The gas separation unit 120 is configured to interact with one or more support structures 110 to minimize the flow of gas from the first vacuum chamber 105 to the second vacuum chamber 106 and/or vice versa. . The gas separation unit 120 may be mounted within the first and/or second vacuum chamber. A vacuum process system may include one or more vacuum pumps, vacuum pumping stations and/or vacuum pumping pressure stages.

[0020] The term “gas pressure” as used herein refers to both the total pressure within a vacuum process system or one or more vacuum chambers and/or the partial pressure, eg, within a vacuum chamber, in particular the gas partial pressure of a gas or gas mixture. can include Moreover, the term "flow of gases" as used herein may include both a gas stream, gas exchange and/or diffusion of gases or gas molecules.

[0021] According to embodiments that may be combined with other embodiments described herein, the vacuum process system may be a coating process system, in particular, the vacuum process system may be used for coating by physical and/or chemical vapor deposition (PVD or CVD). The process system may be a coating process system by thermal evaporation and/or a coating process system by sputtering of organic (eg OLED materials) and non-organic (eg lithium) materials. A vacuum process system may be configured to process one or more substrates, eg, to coat them with one or more materials. One or more support structures may be configured to transport one or more substrates through the vacuum processing system. One or more support structures may be holding and/or carrying structures.

[0022] According to embodiments that can be combined with other embodiments described herein, a vacuum process system can include multiple vacuum chambers. In particular, the vacuum process system may include two vacuum chambers, more specifically four vacuum chambers, and more specifically six vacuum chambers. Each vacuum chamber may have a different gas pressure than the other vacuum chambers. The vacuum chambers may be connected in series, ie each of the vacuum chambers may be connected sequentially to each other along the conveying direction.

[0023] According to embodiments that may be combined with other embodiments described herein, vacuum chambers may be selected from lock chambers, transfer chambers, process chambers, and/or combinations. For example, in particular in front of the first vacuum chamber there may be an atmospheric pressure region, ie a region with atmospheric pressure, for loading and/or unloading substrates into and out of the vacuum chambers. For example, a vacuum process system may include one or more lock chambers, one or more transfer chambers, and one or more process chambers in this order.

[0024] According to embodiments that may be combined with other embodiments described herein, and as shown by way of example in FIG. 1B , vacuum chambers may include one or more pumps 107 . Additionally or alternatively, the vacuum chambers may include one or more pumping stations, eg vacuum pumping stations. Pumps 107 may be vacuum pumps. A predetermined pressure may be set and/or maintained in each vacuum chamber by means of pumps. Moreover, vacuum chambers, particularly process chambers, may include one or more gas inlets. Thus, one or more gases, in particular one or more process gases, may be provided in the vacuum chambers, in particular in the process chambers.

[0025] For example, a vacuum process system may include at least two process chambers. A first gas pressure, particularly a first gas partial pressure, may prevail in the first process chamber, and a second gas pressure, particularly a second gas partial pressure, may prevail in the second process chamber. The first and second process chambers may be connected through a gas separation unit.

[0026] Moreover, for example, a vacuum process system may have zones with atmospheric pressure. For example, a region with atmospheric pressure may adjoin the first vacuum chamber. The first vacuum chamber may have a gas pressure lower than the first, in particular atmospheric pressure region, while the second vacuum chamber, which may be adjacent to the first vacuum chamber, may have a second, for example, first vacuum chamber. It can be an equation that can have a lower gas pressure. In particular, the gas pressure may vary from the first vacuum chamber to additional vacuum chambers, for example the fourth or sixth vacuum chamber. For example, in a vacuum process system with four vacuum chambers, a first vacuum pressure, eg, a lower vacuum may prevail in the first vacuum chamber and a higher vacuum may prevail in the fourth vacuum chamber. The vacuum process system may also have an odd number of vacuum chambers, for example three vacuum chambers or five vacuum chambers.

[0027] According to embodiments that may be combined with other embodiments described herein, the atmospheric pressure region may be adjacent to a chamber in which overpressure prevails. Advantageously, air can be prevented from being sucked into the first vacuum chamber from the atmospheric pressure region, ie into the chamber to which a vacuum is applied. Thus, a high particle load in the first vacuum chamber can be prevented.

[0028] According to embodiments that may be combined with other embodiments described herein, one or more substrates may be introduced into a vacuum process system at atmospheric pressure, for example, one or more support structures as described in accordance with embodiments herein. can be continuously loaded onto the fields. Advantageously, a continuous flow of substrate loading from ambient to high vacuum and back to ambient can be ensured. This may also allow the acceleration section for one or more support structures to be loaded with the substrate to be eliminated or shortened. The transport speed of support structures or substrates may be constant for all support structures or substrates. Advantageously, the size of the vacuum process system, eg the length of the vacuum process system in the conveying direction, can be reduced and/or the conveying speed and, therefore, the throughput/productivity of the system can be simultaneously increased, thus reducing costs. savings can be made Thus, the limitation of productivity due to the lock cycle can be completely eliminated.

[0029] According to embodiments that can be combined with other embodiments described herein, process chambers can include one or more devices for processing a substrate. For example, process chambers may include devices for evaporating coating material onto a substrate. Moreover, the process chambers may include cathode arrangements for sputtering material and/or evaporator arrangements for evaporating material.

[0030] According to embodiments that may be combined with other embodiments described herein, there may be a gas separation unit between each of the vacuum chambers. For example, the first vacuum chamber may be connected to the second vacuum chamber through a gas separation unit. The second vacuum chamber may be connected to the third vacuum chamber through an additional gas separation unit, the third vacuum chamber may be connected to the fourth vacuum chamber through an additional gas separation unit, and so on. Additionally or alternatively, the gas separation unit may be present in one vacuum chamber and may divide the vacuum chamber into two or, in the case of multiple gas separation units, into multiple vacuum regions.

[0031] According to embodiments that may be combined with other embodiments described herein, the vacuum process system may be a dynamic system. A dynamic system is to be understood as a system in which substrates can be continuously guided past sources providing material for coating the substrates, for example, during the coating process, and thus - in contrast to static coatings - in the conveying direction very A high level of layer uniformity can be achieved. No interlocks are required between the process chambers. In conventional vacuum process systems, vacuum chambers can often be locked, for example to prevent the flow of gas from one vacuum chamber to an adjacent vacuum chamber. After transition of the transport structure that carries the substrate through the vacuum process system, the vacuum chamber can be locked and the process gas pressure can be set, for example, by a gas inlet and simultaneous pumping within the chamber. In dynamic systems that can achieve high gas separation coefficients, interlocking of the vacuum chambers can be omitted. According to embodiments, the transport speed of support structures or substrates may depend on the processing or coating rate of the substrate(s). A dynamic system can advantageously ensure a high processing throughput or coating throughput of substrates.

[0032] The service life, in particular of the vacuum chambers used for locking and unlocking, is advantageously further extended, since the vacuum chambers or the vacuum chamber walls are not exposed to large pressure fluctuations depending on the cycle frequency; As a result, the weld seams and/or material are not exposed to significant expansion and/or alternating loads.

[0033] Advantageously, the gas separation unit and/or support structure as described herein can achieve a different or lower gas pressure and/or partial pressure in the direction of a lower gas pressure or partial pressure, ie compared to adjacent vacuum chambers. It is possible to minimize or prevent the flow of gas in the direction of the chamber having By isolating and stabilizing the individual process gas environments, stable pressure conditions or partial pressures in the individual chambers and a smooth process sequence are ensured. Moreover, costs can be reduced and process times can be optimized, since the pressure conditions no longer need to be (re)regulated, or only to a small extent. In this way, a problem-free dynamic process with optimal separation of the different processes and transport of the substrate(s) to be processed and/or the processed substrates can be ensured in the system.

[0034] The support structure may also advantageously block or minimize a transition or cross-section between the vacuum chambers interacting with the gas separation unit, so that the flow or gas exchange of gas between the vacuum chambers may be reduced between the chambers. It is almost prevented or minimized by minimizing the conductance.

[0035] According to embodiments that may be combined with other embodiments described herein, and as shown in FIG. 1A by way of example, the gas separation unit 120 may have a cross-sectional width 121 . The gas separation unit may have a constant cross-sectional width, ie a constant cross-sectional width along the extension of the gas separation unit in the conveying direction. As used herein, "cross-section width" means the extension dimension of the gas separation unit in a direction other than the conveying direction T. In particular, the cross-sectional width of a gas separation unit is to be understood as the shortest distance between two parallel walls of the gas separation unit whose longitudinal extension runs parallel to the conveying direction T. In other words, the cross-sectional width of the gas separation unit may be the shortest distance between two parallel side walls of the gas separation unit, the length of which side walls extend in the conveying direction. Based on a Cartesian coordinate system as shown in FIG. 1 , the cross-sectional width of the gas separation unit may extend in the z direction.

[0036] According to embodiments that can be combined with other embodiments described herein, the cross-sectional width 121 of the gas separation unit is between 0.2 mm and 5 mm, in particular between 0.5 mm and 4 mm, more particularly between 2.5 mm may interact with the cross-sectional width 111 of the one or more support structures such that a maximum gap is achieved between the gas separation unit and the one or more support structures having a cross-sectional width of . As used herein, a “gap” or cross-sectional width of a gap is defined as one or more spans extending from the distance between the one or more support structures and the gas separation unit, in particular from those extending in the conveying direction, which are parallel walls of the gas separation unit. It can be understood to mean the distance between the supporting structures and the gas separation unit. The distance may be the length of the shortest path between the gas separation unit and the supporting structure. Moreover, the cross-sectional width of the gap, ie the overall cross-sectional width of the gap, may result from the cross-sectional width of the individual gaps between the parallel walls of the gas separation unit and the opposing side surfaces of the one or more support structures. Additionally or alternatively, the gap may have a circumferential cross-sectional width around the one or more supporting structures of between 0.2 mm and 5 mm, in particular between 0.5 mm and 4 mm, more particularly between 1.5 mm and 3 mm. A gap can include the distance between one or more support structures and a conveyance system of a vacuum process system.

[0037] According to embodiments that may be combined with other embodiments described herein, the cross-sectional width 111 of the one or more support structures may be between 25 mm and 120 mm, particularly between 40 mm and 100 mm, and more particularly between 60 mm and 120 mm. may be 90 mm.

[0038] According to embodiments that can be combined with other embodiments described herein, the cross-sectional width 121 of the gas separation unit is between 101% and 108% of the cross-sectional width 111 of the one or more support structures 110. , in particular from 103% to 116%, more specifically from 105% to 124%. For example, the support structure can hold a substrate. The cross-sectional width 111 of the support structure may include the cross-sectional width of the held substrate 10, that is, the cross-sectional width of the support structure may include the cross-sectional width of the main body of the support structure and the cross-sectional width of the substrate.

[0039] According to embodiments that may be combined with other embodiments described herein and as shown in FIG. 2 by way of example, a vacuum process system may include a conveyance system 230 . A transport system may be configured to transport one or more support structures. In particular, transport system 230 may be configured to transport one or more support structures through the vacuum process system, from one vacuum chamber to another, for example. The support structure may pass through the gas separation unit. The delivery system can be mounted on the gas separation unit. The delivery system may be selected from a magnetic system, a mechanical system or a combination of both systems.

[0040] According to embodiments that can be combined with other embodiments described herein, the transport system can include a first drive unit. The first drive unit may be an active drive unit, for example a motor. For example, the first driving unit may be a linear motor. The first driving unit may be mounted outside the vacuum chamber. Advantageously, in the case of a dynamic lock vacuum system, vacuum rotary feedthroughs and/or any type (rotary or linear) motors and/or drives and/or feedthroughs within the vacuum chamber may be omitted. The transport system 230 may be configured to interact with the transport device 122 on the support structure to enable transport of the support structure through the vacuum process system. The conveying device 122 may additionally or alternatively include a second drive unit. The second drive unit may be mounted within the support structure. Advantageously, the vacuum compatible active drive unit in the vacuum chambers can be omitted or the required number of active drive units can be greatly reduced.

[0041] According to embodiments that can be combined with other embodiments described herein, the conveying device 122 of the support structure can include one or more rollers 232 . For example, transport system 230 can include a rail configured to transport one or more rollers 232 that can be mounted to one or more support structures. Additionally or alternatively, the transport system may include one or more magnets to ensure contactless or substantially contactless transport of the one or more support structures. The carrying device 122 on the support structure may include one or more magnets. For example, the transport system or one or more magnets of the transport system may interact with one or more magnets mounted to the one or more support structures to create a driving and/or floating position of the one or more support structures. .

[0042] According to embodiments that can be combined with other embodiments described herein, the gas separation unit can include at least one U-shaped rail. In particular, the gas separation unit may include two U-shaped rails. A U-shaped rail can be attached to the top wall of the vacuum chamber and another U-shaped rail can be mounted to the bottom wall of the vacuum chamber. The U-shaped rail can be fastened to the vacuum chamber. A U-shaped rail may provide separation of the different vacuum regions of the vacuum chamber.

[0043] Advantageously, gas exchange between a first side and a second side opposite the first side of the one or more support structures on which the substrate can be held can be prevented or minimized in this way. The gas separation unit and/or support structure may divide the vacuum chamber into two, eg opposing vacuum chamber regions. Referring to FIG. 2 , a vacuum chamber area on the left and a vacuum chamber area on the right may appear in addition to the gas separation unit in a front view. The gas separation factor between these vacuum chamber regions may be about 100. The two vacuum chamber regions of the vacuum chamber can be separated by a gas separation unit cooperating with the supporting structure.

[0044] Advantageously, the support structure can reduce the outgassing effect by more than two orders of magnitude, as described according to embodiments that can be combined with all of the described embodiments. Typical substrate support systems provide large areas that can absorb gases and/or moisture, for example the frame for the substrate, resulting in an undesirable outgassing effect in a vacuum. Due to the resulting gas separation coefficient between the regions of the vacuum chamber(s) by the gas separation unit, on the side of the support structure on which the substrate is mounted and on the side or second side surface of the support structure opposite to the substrate. Separation exists. Particles or gases and/or vapors that accumulate on the support structure can escape unhindered only from small areas outside the area to which the substrate is clamped. Thus, the loosening of particles or the release of gases and/or vapors deposited on the surface opposite the substrate or on the surface of the second side of the support structure takes place in a separate vacuum zone without affecting the substrate or the coating process. do. Thus, the outgassing effect on the side to which the substrate is clamped can be reduced. Desorption of the substrate from the back side can also be reduced and have less disturbing effect on the process.

[0045] According to embodiments that can be combined with other embodiments described herein, the at least one U-shaped rail can provide a transport system. The U-shaped rail may comprise two parallel walls, or the U-shaped rail may provide two parallel side walls of the gas separation unit, between which there is a cross-sectional width 121 . Each of the two parallel walls may have a distance of 1 mm to 3 mm, in particular 1 mm to 2 mm, from the one or more supporting structures when the one or more supporting structures pass through the gas separation unit. In other words, the cross-sectional width 121 of the gas separation unit may be 1 mm to 6 mm wider than the cross-sectional width 111 of the supporting structure, in particular 2 mm wider. In particular, a U-shaped rail may be provided in combination with a mechanical conveying system; for example, a U-shaped rail may provide rail for one or more rollers 232 .

[0046] According to embodiments that may be combined with other embodiments described herein, a U-shaped rail may be mounted to the upper chamber wall. This upper U-shaped rail may include a spacer element, for example one or more non-contacting magnetic spring elements or a roller, or a combination of non-contacting and contacting spacer elements, resulting in a U-shaped rail and support. The distance between structures can be guaranteed.

[0047] Advantageously, the U-shaped rails can catch particles that may be generated by mechanical and/or magnetic transport in the system and thus can effectively reduce or prevent fouling of the vacuum process system.

[0048] According to embodiments that can be combined with other embodiments described herein, the gas separation unit can be a closed gas separation unit. The gas separation unit may completely enclose the space. In particular, the gas separation unit can completely enclose the conveying space for one or more supporting structures.

[0049] According to embodiments that can be combined with other embodiments described herein and as shown by way of example in FIG. 3 , the gas separation unit 120 comprises a first vacuum chamber 105 and/or a second vacuum chamber. 106 or to vacuum chambers. Additionally or alternatively, the gas separation unit may be adjacent to the vacuum chamber wall of the first and/or second vacuum chamber(s). The gas separation unit may have a first fastening element. For example, the first fastening element can be adjacent to the second fastening element of the vacuum chamber wall or can be fastened to the second fastening element of the vacuum chamber wall. The first and second fastening elements may overlap when engaged or abutting. The vacuum chamber wall may in particular be a side wall of the vacuum chamber. Moreover, in particular, the gas separation unit may abut on opposing vacuum chamber walls, or the first fastening element of the gas separation unit may abut on opposing vacuum chamber walls, for example vacuum chamber side walls, and and/or may be concluded there. Additionally or alternatively, the vacuum chamber wall may be an upper chamber wall, ie the uppermost wall of the vacuum chamber. In order to prevent further exchange of gas between adjacent vacuum chambers, for example bypass, a seal, for example an O-ring, is provided between the second fastening element of the chamber wall and the first gas separation unit. It can be mounted between fastening elements and can minimize conductance.

[0050] Advantageously, the gas separation unit remains independent of the vacuum chamber, so that vibrations, movements, (thermal) expansion or vacuum related deformations of the vacuum chamber(s) have little or no effect on the gas separation unit. or no effect at all, i.e. the gas separation unit is exposed to any external influences, for example from the vacuum chamber, which can severely change the cross-sectional width of the gap between the gas separation unit and the one or more support structures. It doesn't work.

[0051] According to embodiments that can be combined with other embodiments described herein and as shown by way of example in FIG. 4 , at least one U-shaped rail of the gas separation unit is a filling body 423 can be equipped with In particular, a U-shaped rail that can be fastened to the upper vacuum chamber wall can have a filling body. In this way, thermal processes, eg processes with high process temperatures, can be implemented without possible thermal effects on the supporting structure, eg thermal expansion of the material, during gas separation in the gas separation unit. Advantageously, the filling body can compensate for expansion of the support structure, for example thermal expansion, or keep the gap between the U-shaped rail and the support structure as small as possible. In this way, the flow of gas in the conveying direction or in the opposite direction and/or from the first side of the supporting structure to the second side of the supporting structure and vice versa can be effectively prevented or minimized. can Additionally or alternatively, the charging body may be variably configurable. For example, the charging body can be designed in such a way that a variable distance from one or more supporting structures can be set. Moreover, additionally or alternatively, the distance between the upper U-shaped rail and the one or more supporting structures may be adjusted. For example, a U-shaped rail may be fastened to the top wall of the vacuum chamber via a deformable element. Thus, the distance or gap between the U-shaped rail and one or more support structures can be set to a minimum or maintained.

[0052] According to embodiments that may be combined with other embodiments described herein, the gas separation unit may include a frame 424 . In particular, the frame can provide rigidity to the gas separation unit or can increase the rigidity of the gas separation unit. The frame can be pressed against the walls of the gas separation unit. The frame may be connected to the first fastening element of the gas separation unit. The frame may support mechanical separation of the gas separation unit from the vacuum chamber wall. Moreover, the shape and position of the gas separation unit can be kept stable, as a result of which there are no (additional) spaces or gaps to allow gas to flow through the gas separation unit.

[0053] According to embodiments, which may be combined with other embodiments described herein, a support structure for transporting a substrate in a vacuum process chamber is provided. The support structure includes a body 112 configured to hold a substrate 10 . Moreover, the support structure includes a conveying device 122 configured to convey the body in the conveying direction T in the vacuum process system 100 . Body 112 is further configured to minimize the flow of gas in the region of gas separation unit 130 in a vacuum process system.

[0054] According to embodiments that may be combined with other embodiments described herein, the support structure 110 or body 112 may have a constant cross-section in the transport direction T. In other words, as shown in FIG. 4 , the cross-sectional width of the support structure in the z direction along the extension of the support structure in the transport direction T may be constant. In other words, the support structure or body 112 of the support structure may include a cross-sectional width 111 . Cross-section width can be understood as the lengthwise or superficial extension of a supporting structure or body in the z-direction of a Cartesian coordinate system as shown in FIG. 4 . The extension in the z direction and the surface resulting from the extension in the y direction can be understood as the front surface or front side of the supporting structure or body.

[0055] According to embodiments that can be combined with other embodiments described herein, the support structure can carry multiple substrates simultaneously. The substrates can be placed close to each other, for example with a distance of only a few millimeters or <1 mm with very little thermal stress. Advantageously, the processing rate or efficiency can be increased in this way because less material can be coated on the support structure or more material can reach the substrate(s).

[0056] According to embodiments that can be combined with other embodiments described herein, the support structure can carry a continuous substrate, particularly in the case of a dynamic lock vacuum process system. For example, the continuous substrate may be foil or ultra-thin glass or ribbon. For example, a continuous substrate may be provided on a support structure via rolls that can be rolled or unwound and by a vacuum process system.

[0057] According to embodiments that can be combined with other embodiments described herein, the gas separation unit 120 can provide a constant flow cross-section over the length of the gas separation unit in the conveying direction and the body 112 comprises: As the body 112 is conveyed through the gas separation unit, it fills 80% to 99%, particularly 86% to 97%, and more particularly 90%, of the flow area along the length of the gas separation unit.

[0058] Advantageously, the fact that a constant cross-section or a constant cross-sectional width of the support structure along the conveying direction and/or the flow volume of the gas separation unit is filled by the support structure means that the support structure via the gas separation unit This means that the flow of gas when conveyed is minimized or prevented. Different gas pressures or partial pressures in adjacent vacuum chambers, which can be connected through a gas separation unit, are typically followed by a flow of gas between the vacuum chambers to equalize the pressure difference. Conventional transport systems, such as carriers that can be attached as a frame around the substrate to be transported, provide a cross-section on the sides of the substrate facing away from the carrier, for example between 20 mm and 20 mm in the case of the carrier. Due to the difference in the cross-section width of the carrier and the substrate, which is 30 mm and in the case of the substrate between 0.3 mm and 0.8 mm, the flow of gas in the gas separation unit between the vacuum chambers through the cross-section can be enabled. . Thus, a constant cross-section of the support structure may prevent or reduce the presence of cross-sections and thus prevent or minimize gas flow or gas diffusion in a vacuum process system, for example between adjacent vacuum chambers.

[0059] According to embodiments that may be combined with other embodiments described herein, the support structure may be made of metal. For example, the support structure may be made of aluminum, stainless steel and/or titanium.

[0060] According to embodiments that can be combined with other embodiments described herein, the support structure 110 is provided over a gas separation distance of the gas separation unit along the transport direction T of 0.5 m, It can be configured to provide a molecular gas separation factor of 50, particularly a molecular gas separation factor of 100. Additionally or alternatively, the support structure 110 may be configured to provide a gas separation factor of 1000 over a gas separation distance of the gas separation unit along the conveying direction of 1 m to 2 m. Additionally or alternatively, depending on the total number of gas separation units, the vacuum process system can achieve molecular gas separation factors of 10 ² to 10 ¹² . For example, when using four gas separation units in a vacuum process system, a gas separation factor of 10 ⁶ to 10 ⁸ will be achieved.

[0061] According to embodiments that can be combined with other embodiments described herein, the support structure can be arranged substantially vertically in a vacuum process system. This means that the support structure can be transported substantially vertically in or through the vacuum process system and/or substantially vertically at a particular location in the vacuum process system, for example, while the substrate 10 is being processed. means that it can be held vertically. Substantially vertical is to be understood as meaning that the vertical orientation of the supporting structure may deviate from the exactly vertical orientation by at most ±15°, in particular by at most ±10°.

[0062] According to embodiments, which may be combined with other embodiments described herein, the support structure may carry one or more substrates. The substrates may be transported substantially vertically, eg in a vertical orientation. According to embodiments that may be combined with other embodiments described herein, the substrate may be a large area substrate. The large area substrate may have a size of at least 0.01 m ² , more precisely at least 0.1 m ² , more precisely at least 0.5 m ² . For example, a large area substrate or carrier may have a GEN 4.5 corresponding to approximately 0.67 m ² substrates (0.73×0.92 m), a GEN 5 corresponding to approximately 1.4 m ² substrates (1.1 m×1.3 m), approximately 4.29 GEN 7.5 corresponding to m ² substrates (1.95 m×2.2 m), GEN 8.5 corresponding to approximately 5.7 m ² substrates (2.2 m×2.5 m) or even, approximately 8.7 m ² substrates (2.85 m×3.05 m) ) may be GEN 10 corresponding to Larger generations such as GEN 11 and GEN 12 and corresponding substrate surfaces can also be achieved in a similar manner. Additionally or alternatively, a continuous substrate may be conveyed.

[0063] According to embodiments that may be combined with other embodiments described herein, the substrate may have a thickness of less than 0.4 mm. The substrate may be a foil or ribbon. The substrate may be a glass substrate. Advantageously, the support structure can be configured to carry any substrate thickness. The cross-sectional width of the support structure can be made up of the thickness of the substrate to be transported. The support structure also advantageously prevents the substrate from flexing or breaking, since vibrations during transport can be prevented or reduced by the large dimensions of the support structure and the substrate can only be edged. This is because it can be fixed not only at , but also over the entire area.

[0064] According to embodiments that can be combined with other embodiments described herein, the conveying device 122 , eg one or more rollers 232 , can be integrated into the support structure. In particular, the conveying device can be integrated into the supporting structure at the lower end. In this way, particle generation can be reduced and a larger surface for supporting the substrate can be provided. For example, each roller of one or more rollers may be provided in its own housing. Thus, the flow of gas over the rollers in the conveying direction T and/or in the opposite direction can be prevented.

[0065] According to embodiments that may be combined with other embodiments described herein and as shown for example in FIG. 5 , the body 112 is configured to hold the substrate 10 . Body 112 may include, for example, one or more fastening cartridges for releasably fastening substrate 10 on a first side surface extending in a vertical direction and along a transport direction. One or more fastening cartridges may be configured to interchangeably provide one or more fastening means 540 . One or more fastening means 540 may be clampable and/or non-clampable fastening means. The one or more fastening means may be selected from one or more pads, one or more adhesive units or combinations thereof. For example, the one or more fastening means may be adhesive pads or strips, gecko pads or strips, or tissue adhesive pads or strips. Moreover, the support structure may have a socket at the lower end of the support structure to support the substrate. A socket can include multiple pins.

[0066] According to embodiments that may be combined with other embodiments described herein, the support structure may include an e-chuck for supporting the substrate. An e-chuck may include multiple segments, for example strips. Segments may be juxtaposed in a vertical orientation. The segments or strips can be individually adjusted or controlled by the control unit. Segments or strips can be activated and/or deactivated independently of one another. Advantageously, the substrate can be placed close to the supporting structure. In this way, bending or fracture of the substrate due to, for example, vibrations, layer stresses and/or thermal stresses can be effectively prevented or reduced.

[0067] Advantageously, flashover by using the e-chuck during evacuation of a vacuum chamber or at pressure conditions in the critical region of the Paschen curve in a vacuum chamber or in transition from one vacuum chamber to an adjacent vacuum chamber ( flashover or sparking can be prevented. Segments of the e-chuck that are within the critical pressure range can be selectively deactivated while the substrate is held by other segments that are at non-critical pressure conditions. This is particularly advantageous when processing large area substrates.

[0068] According to embodiments that may be combined with other embodiments described herein, the support structure may include a controller. The support structure may include an internal CPU. The controller can be controlled wirelessly. The controller may be configured to intelligently control the e-chuck or individual segments. For example, the controller can activate and/or deactivate segments of the e-chuck depending on pressure conditions prevailing in the vacuum chamber. The support structure may further include a backup battery for an independent power supply. The support structure may include inductive power transmission.

[0069] According to embodiments that may be combined with other embodiments described herein, the support structure may be controlled via an external communication path. For example, a support structure or body may include one or more interfaces for communication with one or more devices. The one or more interfaces may include, for example, one or more sliding contacts attached to a side of the support structure away from the substrate and/or in an area of the support structure that may come into contact with a U-shaped rail of the gas separation unit. .

[0070] For example, one or more sliding contacts may be mounted to the bottom of the supporting structure. Additionally or alternatively, the support structure may include one or more central front contacts. The front contact means a contact mounted on the surface of the support structure directly facing the carrying direction T or on the side opposite to this side. In other words, the front contact may be provided on the front side or front surface or on the rear side or rear surface. The one or more front contacts may include optical fibers for high voltage or power transmission and/or data transmission and/or digital data connection to a BUS system. Front contacts may include wired and/or wireless systems such as WLAN, radio, or similar wireless systems or combinations thereof.

[0071] According to embodiments that may be combined with other embodiments described herein, the support structure may include a chamber cleaning unit. The chamber cleaning unit may be mounted on the side opposite the substrate or on the second side surface of the supporting structure or body. The chamber cleaning unit may include two or more rollers. The first roller may be configured to unwind the cleaning device. The second roller may be configured to wind the cleaning device. A distance that the cleaning device can extend between the first roller and the second roller may be between the first roller and the second roller. One or more auxiliary rollers may bring the cleaning device into contact with the vacuum chamber or gas separation unit or U-shaped rail or transport system. The cleaning device can be, for example, an adhesive film to which particles can be adhered. As the support structure is transported through the vacuum process system, particles and/or other contaminants may be captured and accumulated by unwinding and winding the cleaning device, as a result of which new contamination through already entrapped particles does not occur. may not be When used in a vacuum process system, the support structure can advantageously simultaneously clean the system to prevent contamination of the substrate and the resulting generation of rejected substrates. In particular, further crushing of the particles or fragments and thus further generation of additional particles can be avoided.

[0072] According to embodiments that can be combined with other embodiments described herein, the supporting structure or body can include an integrated heating unit. The heating unit may be, for example, a heating wire, IR lamps, luminous radiators, an induction heater, or the like. The heating unit may be powered by an external power supply and/or an internal power supply of the supporting structure, for example a backup battery. In this way, uniform heating of the support structure or a plurality of support structures can be ensured.

[0073] According to embodiments that may be combined with other embodiments described herein, a latent heat accumulator may be provided. The support structure may include a latent heat accumulator. The support structure and/or the latent heat accumulator may comprise a heat-storing material, in particular a phase change material (PCM) configured to store energy, eg in the form of heat. . The latent heat accumulator may be provided in one or more volumes, wherein the one or more volumes are configured to provide thermal mass material. One or more volumes may be provided with PCM mixtures or each may be provided with different PCM materials. The one or more volumes may include a first end and a second end, wherein the first end and the second end may be closed. For example, one or more volumes may be tubes. One or more volumes may be arranged vertically or horizontally in the supporting structure. Different PCM materials can be provided for multiple volumes, such that heat management in heating and/or cooling stages can be optimized. One or more tubes may be made of the same material as the support structure. For example, one or more bores may be provided in a support structure that may be filled with PCM. Additionally or alternatively, one or more tubes may be made of a material that provides particularly good heat conduction. For example, one or more tubes may be made of corrosion resistant steels such as copper (Cu), aluminum (Al) and/or VA, ie V2A and V4B and/or combinations. VA can also be understood to mean, for example, stainless steel as well as alloyed stainless steel, in particular stainless steel alloyed with 2% molybdenum (Mo).

[0074] According to embodiments that may be combined with other embodiments described herein, the latent heat accumulator may be configured to maintain a temperature of the supporting structure at ≧80 °C. Latent heat accumulators can be designed to keep the temperature of the supporting structure constant - eg, also constant below 80 °C. In other words, the temperature of the supporting structure may drop relatively slowly. Advantageously, the condensation of undesirable substances in the process can be prevented or reduced along their vapor pressure curve by higher or more uniform temperatures without disturbing the process. Advantageously, the PCM may have buffer properties. For example, the PCM can store additional energy to increase the temperature of the supporting structure without significantly increasing the temperature of the supporting structure. As a further advantage, the PCM can prevent non-uniform distribution of heat throughout the supporting structure and can ensure a homogeneous temperature distribution throughout the supporting structure.

[0075] According to embodiments that may be combined with other embodiments described herein, the latent heat accumulator may include active integrated heating such as a resistive heater, for example a resistive heating wire. A resistive heater may be configured to preheat the support structure. The resistive heater may be an electrical resistance heater. A resistive heater, in particular an electrical resistive heater, can be activated at different times by the energy stored in the PCM. Moreover, the latent heat accumulator may be provided in the supporting structure together with other external heating systems, such as radiant heaters, resistance heaters, heat lamps, induction heaters, microwave heaters and/or direct heaters. An efficient and tailored heating system can advantageously be provided in this way.

[0076] According to embodiments that may be combined with other embodiments described herein, and as shown by way of example in FIG. 6 , the body may include at least one compartment. At least one compartment, in particular one or more vertically oriented compartments, may be located inside the supporting structure or body of the supporting structure. In this way, the weight of the supporting structure can advantageously be reduced - especially for cross-sectional widths of 50 mm or more. The second side surface (ie, the side surface opposite the side surface capable of holding the substrate) and/or the first side surface (ie, the side surface capable of holding the substrate) is one for providing gas pressure in the at least one compartment. It may include more than one opening. For example, the gas pressure in the at least one compartment may be the same as the gas pressure in the vacuum chamber. In particular, the gas pressure in the at least one compartment may be equal to the gas pressure in the area of the vacuum chamber separated by the gas separation unit or by the supporting structure.

[0077] According to embodiments that can be combined with other embodiments described herein, the gas pressure in at least one compartment can be adjusted. When the support structure is transferred to an adjacent vacuum chamber having a lower or higher gas pressure, the gas pressure in the at least one compartment may be reset or adjusted to a new gas pressure in the adjacent chamber. The support structure or at least one compartment may include a sensor that measures and provides a value for the gas pressure within the compartment. Based on a comparison of gas pressure values in the at least one compartment and the vacuum chamber or vacuum chamber region, the gas pressure may be (re)regulated via the controller.

[0078] According to embodiments that may be combined with other embodiments described herein, one opening may be a vertical slot. Multiple openings may form one or more vertical rows. When passing through the gas separation unit, one or more of the openings may be completely covered. In this way, short cuts with additional overflows can be avoided.

[0079] According to embodiments that can be combined with other embodiments described herein, and as shown by way of example in FIG. 7 , multiple support structures can be coupled in a row in a vacuum process system. there is. The coupled arrangement of support structures may be magnetic and/or mechanical and/or electromagnetic. For example, two or more support structures may be mechanically coupled. Moreover, two or more support structures may be mechanically coupled in an electromagnetically and/or electrically controlled manner. Between the two or more supporting structures there may be a seal, such as an elastomer, shock absorber or labyrinth-like structure. In this way, the gas separation between the vacuum chamber regions, created by the support structure and/or the gas separation unit, can be further improved.

[0080] According to embodiments that can be combined with other embodiments described herein, the front surface or rear surface of each coupled support structure can have an interlocking shape, forming a maze-like structure. Through this, for example, it is possible to lengthen the path of gas from one side to the other. For example, the rear surface of one support structure may have a first shape that precisely fits into a second shape of the front surface of the other structure. In other words, two or more support structures may be plugged onto or into each other via their respective front or rear surfaces. In this way, the sealing between the vacuum chamber regions can be improved, which increases the gas separation between the vacuum chamber regions.

[0081] According to embodiments, which may be combined with other embodiments described herein, the support structure may be configured to carry one or more large area substrates. In particular, multiple support structures coupled to each other may be configured to carry large area substrates. A large first side surface for holding a large area substrate may be created by a coupled juxtaposition of a number of support structures allowing transport of large area substrates.

[0082] According to embodiments that can be combined with other embodiments described herein and as shown by way of example in FIG. 8 , a method 800 for transporting a substrate in a vacuum process system is provided. The method includes providing a vacuum process system in accordance with the described embodiments (as indicated by box 860 in FIG. 8 ), providing one or more support structures in accordance with the described embodiments (in FIG. 8 ). as indicated by box 870), and conveying the substrate by one or more support structures through the vacuum process system in at least one conveying direction (as indicated by box 880 in FIG. 8). include

[0083] According to embodiments that can be combined with other described embodiments, the method can be a continuous and dynamic method. Transporting a substrate may include transporting multiple substrates. Substrates to be transported can be alternately loaded into the vacuum process system onto a support structure under atmospheric pressure conditions. Substrates may also be loaded onto support structures that are coupled to each other.

[0084] According to embodiments that may be combined with other described embodiments, the support structure may be transported through a gas separation unit of a vacuum process system. The support structure may include a cross-sectional width that blocks the flow cross-section of the gas separation unit. Thus, the flow of gas through the gas separation unit, for example from one vacuum chamber to another vacuum chamber or from the atmosphere in the direction of the vacuum, which is connected via the gas separation unit, can be prevented or minimized. .

[0085] Although the foregoing relates to embodiments of the present disclosure, other and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, the scope of which is set forth in the following claims. determined by

Claims (18)

A vacuum process system (100) for processing a substrate, comprising:
a first vacuum chamber (105) with a first gas pressure;
a second vacuum chamber (106) with a second gas pressure;
a gas separation unit (120) between the first vacuum chamber (105) and the second vacuum chamber (106), the gas separation unit providing a connection between the first vacuum chamber and the second vacuum chamber; do; and
The gas separation unit 120 controls the flow of gas from the first vacuum chamber 105 to the second vacuum chamber 106 and/or from the second vacuum chamber 106 to the first vacuum chamber 105 . A vacuum process system (100) for processing a substrate, configured to interact with one or more support structures (110) to minimize According to claim 1,
The cross-sectional width 121 of the gas separation unit, between the cross-section of the gas separation unit and the cross-section of the one or more supporting structures, is between 0.2 mm and 5 mm, in particular between 0.5 mm and 4 mm, more particularly between 2.5 mm. A vacuum process system (100) for processing a substrate that interacts with the cross-sectional width (111) of the one or more support structures, such that a maximum gap with According to claim 2,
The cross-sectional width 121 of the gas separation unit is between 101% and 108% of the cross-sectional width 111 of the one or more support structures 110, in particular 103, in particular when the one or more support structures hold a substrate. A vacuum process system 100 for processing a substrate, corresponding to % to 116%, more specifically 105% to 124%. According to any one of claims 1 to 3,
further comprising a conveying system 230;
The vacuum process system (100) for processing a substrate, wherein the transport system is configured to transport the one or more support structures. According to claim 4,
The vacuum process system (100) for processing substrates, wherein the transport system (230) is arranged in the gas separation unit (120) and/or the gas separation unit comprises at least one U-shaped rail. According to claim 5,
The vacuum process system (100) for processing substrates, wherein the at least one U-shaped rail of the gas separation unit is equipped with a filling body, in particular a variably configurable filling body. According to any one of claims 1 to 6,
The gas separation unit 120 is adjacent to a vacuum chamber wall, the gas separation unit including a frame allowing the gas separation unit to be mechanically separated from the vacuum chamber wall. ). According to any one of claims 1 to 7,
The vacuum process system has a third vacuum chamber having a third gas pressure and/or a fourth vacuum chamber having a fourth gas pressure and/or a fifth vacuum chamber having a fifth gas pressure and/or a sixth gas pressure. A vacuum process system (100) for processing a substrate, comprising a sixth vacuum chamber, wherein the individual vacuum chambers are connected through a gas separation unit. According to any one of claims 1 to 8,
The vacuum process system is a coating process system, in particular a coating process system by physical and/or chemical vapor deposition, in particular a coating process system by thermal evaporation of organic and/or inorganic materials and/or a coating process by sputtering. system, a vacuum process system 100 for processing a substrate. According to any one of claims 1 to 9,
The vacuum process system (100) for processing a substrate, wherein the vacuum process system comprises one or more support structures, in particular at least two support structures connected to each other. As a support structure 110 for carrying the substrate 10 in the vacuum chamber 105,
a body 112 configured to hold the substrate 10; and
a conveying device (122) configured to convey the body in a conveying direction (T) in the vacuum process system (100);
The body 112 is a support structure 110 for carrying a substrate 10 in a vacuum chamber 105, further configured to minimize the flow of gas in the region of the gas separation unit 130 of the vacuum process system. . According to claim 11,
The support structure (110) for carrying the substrate (10) in the vacuum chamber (105), wherein the main body (112) has a constant cross section in the carrying direction (T). According to claim 11 or 12,
The gas separation unit provides a constant flow cross section along the length of the gas separation unit in the conveying direction, and the body 112, when the body 112 is conveyed through the gas separation unit, the gas separation unit A support structure for transporting a substrate 10 in a vacuum chamber 105 filling 80% to 99%, in particular 86% to 97%, more particularly 90% of the flow cross section over the length of the unit. (110). According to any one of claims 11 to 13,
The support structure 110 provides a molecular gas separating factor of 50, in particular a gas separation factor of 100, over a gas separation distance of 0.5 m of the gas separation unit extending along the conveying direction. substrate 10 in vacuum chamber 105 configured to provide a gas separation factor of 1000 over a gas separation distance of the gas separation unit extending along the conveying direction, of 1 m to 2 m, and/or Support structure 110 for carrying the. According to any one of claims 11 to 14,
The body 112 includes, on a first side surface extending along the transport direction, one or more fastening cartridges for detachably fastening the substrate, the one or more fastening cartridges being interchangeable. A support structure (110) for transporting a substrate (10) in a vacuum chamber (105), possibly configured to provide one or more fastening means (540). According to any one of claims 11 to 14,
The support structure comprises an e-chuck for supporting the substrate, the e-chuck in particular comprising a plurality of segments, a support for transporting the substrate 10 in the vacuum chamber 105. Structure 110. A method (600) for transporting a substrate in a vacuum process system, comprising:
providing a vacuum process system according to claims 1 to 9;
providing one or more support structures; and
A method (600) for transporting a substrate in a vacuum process system, comprising transporting a substrate by the one or more support structures through the vacuum process system in at least one transport direction. According to claim 17,
A method (600) for transporting a substrate in a vacuum process system, wherein the one or more support structures are support structures according to any one of claims 11 to 16.