CN218089795U - Variable pitch structure of vacuum cavity - Google Patents

Variable pitch structure of vacuum cavity Download PDF

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Publication number
CN218089795U
CN218089795U CN202221584330.6U CN202221584330U CN218089795U CN 218089795 U CN218089795 U CN 218089795U CN 202221584330 U CN202221584330 U CN 202221584330U CN 218089795 U CN218089795 U CN 218089795U
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CN
China
Prior art keywords
pitch
assembly
cavity
butt joint
variable
Prior art date
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Active
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CN202221584330.6U
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Chinese (zh)
Inventor
戴佳
朱鹤囡
董雪迪
林佳继
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Laplace Wuxi Semiconductor Technology Co Ltd
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Laplace Wuxi Semiconductor Technology Co Ltd
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Application filed by Laplace Wuxi Semiconductor Technology Co Ltd filed Critical Laplace Wuxi Semiconductor Technology Co Ltd
Priority to CN202221584330.6U priority Critical patent/CN218089795U/en
Priority to PCT/CN2022/118598 priority patent/WO2023245882A1/en
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Publication of CN218089795U publication Critical patent/CN218089795U/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16LPIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L23/00Flanged joints
    • F16L23/02Flanged joints the flanges being connected by members tensioned axially
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16LPIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L23/00Flanged joints
    • F16L23/16Flanged joints characterised by the sealing means
    • F16L23/18Flanged joints characterised by the sealing means the sealing means being rings

Abstract

The utility model discloses a displacement structure of vacuum cavity, including displacement power component, displacement transmission assembly, flexible subassembly and butt joint subassembly, displacement power component is connected with displacement transmission assembly, and displacement transmission assembly is connected with flexible subassembly, and flexible subassembly is connected with the butt joint subassembly, and displacement power component passes through displacement transmission assembly, the silicon chip that flexible subassembly and butt joint subassembly control support plate device bore and the interval of special gas spray set or/and heat source, the utility model discloses a silicon chip that displacement transmission assembly and flexible subassembly bore support plate device are adjusted with special gas spray set or/and heat source interval, and the interval scope of regulation is wide, can satisfy different silicon chips, the interval demand of different technologies, realizes interval automatic adjustment's technological effect simultaneously, improves production efficiency, satisfies the demand of automatic pipelined production.

Description

Variable pitch structure of vacuum cavity
Technical Field
The utility model belongs to the photovoltaic equipment field relates to a displacement structure of vacuum cavity.
Background
The core process of the manufacturing process of the heterojunction solar cell comprises a film deposition process, wherein the film deposition process comprises a plurality of film coating processes such as an I-type intrinsic amorphous silicon film, a P-type amorphous silicon film, an N-type amorphous silicon film and the like, and in each film coating process, the distances between a silicon wafer and an extra-gas spray pipe and a heat source are different. The distance of the existing silicon wafer coating production line is adjusted by manually replacing and installing the tool by an operator, the operation has low production efficiency, automatic assembly line type production cannot be realized, and the whole productivity is low.
The sealing is kept in the process of adjusting the distance between the silicon wafer and the special gas spray pipe and the distance between the silicon wafer and the heat source, a vacuum sealing cylinder is usually adopted for sealing at present, but the vacuum sealing cylinder only has one initial position and one action position, can only realize the conversion of the two positions, and cannot realize the adjustment of the distance.
Disclosure of Invention
The utility model discloses an overcome prior art not enough, provide a can realize the displacement structure of the regulation vacuum cavity of multistage distance.
In order to achieve the above purpose, the utility model adopts the following technical scheme: the utility model provides a vacuum chamber's displacement structure, includes displacement power component, displacement transmission assembly, flexible subassembly and butt joint subassembly, and displacement power component is connected with displacement transmission assembly, and displacement transmission assembly is connected with flexible subassembly, and flexible subassembly is connected with the butt joint subassembly, and displacement power component passes through displacement transmission assembly, flexible subassembly and butt joint subassembly control support plate device and removes.
Furthermore, the telescopic assembly comprises a movable flange, a corrugated pipe and a fixed flange, the two ends of the corrugated pipe are connected with the movable flange and the fixed flange, the fixed flange is connected with a butt flange on the outer side of the vacuum cavity, a sealing ring is arranged between the fixed flange and the butt flange, the movable flange is connected with the variable-pitch transmission assembly, and the telescopic assembly is located outside the cavity of the vacuum cavity.
Furthermore, the butt joint assembly comprises a butt joint rod and a butt joint block, one end of the butt joint rod is connected with the movable flange, the other end of the butt joint rod is connected with the butt joint block, the butt joint block is located inside the vacuum cavity, and the butt joint block is connected with the carrier plate device.
Furthermore, the silicon wafer is loaded on the support plate device, the support plate device is arranged in the cavity of the vacuum cavity through a positioning support mechanism and a positioning mechanism, the positioning support mechanism comprises a support, and the positioning mechanism comprises a positioning support.
Further, the butt joint component comprises a butt joint rod and a butt joint block, one end of the butt joint rod is connected with the movable flange, the other end of the butt joint rod is connected with the butt joint block, the butt joint block is located inside the vacuum cavity, the butt joint block is respectively connected with the support and the positioning support, sliding devices are arranged between the support and the vacuum cavity, each sliding device comprises a fixed joint plate and a sliding block, the fixed joint plate is connected with the vacuum cavity, the sliding blocks are respectively connected with the support and the positioning support, and the sliding blocks are connected with the fixed joint plate in a sliding mode.
Further, the variable pitch power assembly comprises a motor, and an output shaft of the motor is connected with the variable pitch transmission assembly through a first bearing.
Furthermore, the vacuum pump further comprises a mounting bracket, wherein the variable-pitch power assembly and the variable-pitch transmission assembly are arranged on the mounting bracket, and the mounting bracket is arranged on the outer side surface of the vacuum cavity.
Furthermore, the variable pitch transmission assembly comprises a screw nut, a screw rod and a fixed seat, the fixed seat is arranged on the mounting bracket, the screw rod is rotatably connected with the fixed seat, and one end of the screw rod is connected with the variable pitch power assembly.
Furthermore, a plurality of sensors are included, and the sensors are used for sensing the position of the lead screw nut.
Furthermore, the distance between the silicon chip carried by the carrier plate device and the special gas spraying device or/and the heat source is adjusted by the variable-pitch power assembly through the variable-pitch transmission assembly, the telescopic assembly and the butt joint assembly.
To sum up, the utility model discloses an useful part lies in:
(1) The utility model discloses a silicon chip that displacement drive assembly and flexible subassembly bore to the support plate device is adjusted with special gas spray set or/and heat source interval, and the interval wide range of regulation can satisfy the interval demand of different silicon chips, different technologies, realizes interval automatic adjustment's technological effect simultaneously, improves production efficiency, satisfies the demand of automatic pipelined production.
(2) The utility model discloses a mounting flange of flexible subassembly and the flange joint of vacuum cavity lateral surface to set up the sealing washer between mounting flange and flange joint, guarantee bellows and vacuum cavity's leakproofness, moving flange is connected with displacement drive assembly and is realized the support plate device along axial reciprocating motion, realizes the effect to silicon chip and special gas spray set or/and heat source interval regulation.
Drawings
FIG. 1 is a schematic view of the vacuum coating apparatus of the present invention.
Fig. 2 is the assembly diagram of the vacuum chamber, the pitch-variable structure, the carrier plate device and the transmission structure of the present invention.
Fig. 3 is a schematic view of the assembly of the silicon wafer and the carrier plate device of the present invention.
Fig. 4 is a schematic view of the vacuum chamber of the present invention.
Fig. 5 is a front view of the vacuum chamber of the present invention.
Fig. 6 is a top view of the vacuum chamber of the present invention.
Fig. 7 is an assembly diagram of the transmission structure and the carrier plate device of the present invention.
Fig. 8 is an enlarged schematic view of a in fig. 7.
Fig. 9 is a side view of the transmission structure of the present invention.
Fig. 10 is an enlarged schematic view of B in fig. 7.
Fig. 11 is an assembly diagram of the transmission structure, the carrier plate device and the vacuum chamber according to the present invention.
Fig. 12 is a side view of the assembly of the transmission structure, the carrier plate device and the vacuum chamber of the present invention.
Fig. 13 is a schematic view of the pitch-variable structure of the present invention.
Fig. 14 is an assembly diagram of the pitch-variable structure and the carrier plate device according to the present invention.
Fig. 15 is an assembly diagram of the vacuum chamber, the variable pitch structure and the carrier plate device of the present invention.
Fig. 16 is a front view of a vacuum chamber according to a second embodiment of the present invention.
The labels in the figure are: the device comprises a heating device 2, a special gas spraying device 5, a valve cavity 6, a silicon wafer 7, a second valve 10, a first valve 11, a loading preheating vacuum cavity 12, a first film-coating vacuum cavity 13, a vacuum cavity 14, a second film-coating vacuum cavity 15, a carrier plate conversion vacuum cavity 16, a third film-coating vacuum cavity 17, a fourth film-coating vacuum cavity 18, a discharging heat-dissipation vacuum cavity 19, a cavity frame 140, a first cavity door 141, a second cavity door 142, a third cavity door 143, a fourth cavity door 144, a beam frame 145, a dry pump butt flange 146, a partition plate 147, a hinge 148, a butt flange 149, a carrier plate device 3, a frame 30, an upper frame plate 301, a lower frame plate 302, a transmission structure 4, a positioning support mechanism 41, a support 411, a the device comprises a wheel mounting frame 412, a supporting wheel 413, a positioning wheel 414, a rack 415, a supporting plate 416, a power mechanism 42, a motor assembly 421, a magnetic fluid 422, a coupling 423, a power gear 424, a bearing seat 425, a power rotating shaft 426, a positioning mechanism 43, a positioning bracket 431, a positioning fixing plate 432, a positioning rod 433, a variable-pitch structure 8, a variable-pitch power assembly 81, a variable-pitch transmission assembly 82, a lead screw nut 821, a lead screw 822, a fixing seat 823, an isolation plate 824, an expansion assembly 83, a moving flange 831, a corrugated pipe 832, a fixing flange 833, a butt joint assembly 84, a butt joint rod 841, a butt joint block 842, a mounting bracket 85, a first bearing 86, a sliding device 87, a fixed connection plate 872, a sliding block 871 and a sensor 88.
Detailed Description
The following embodiments of the present invention are provided by way of specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.
It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present invention in a schematic manner, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the form, amount and proportion of each component may be changed arbitrarily and the layout of the components may be more complicated.
In the embodiment of the present invention, all directional indicators (such as up, down, left, right, front, rear, horizontal, vertical \8230;) are used only to explain the relative positional relationship between the components in a specific posture, the motion situation, etc., and if the specific posture is changed, the directional indicator is changed accordingly.
Because of reasons such as installation error, the parallel relation that the embodiment of the present invention indicates may actually be the approximate parallel relation, and the perpendicular relation may actually be the approximate perpendicular relation.
The first embodiment is as follows:
as shown in fig. 1-15, a vacuum coating apparatus comprises a heating device, a support plate device, a special gas spraying device, a valve cavity 6, a process cavity, a transmission structure 4 and a variable pitch structure 8, wherein the support plate device is loaded with a silicon wafer 7, the process cavity comprises a loading preheating vacuum cavity, a coating vacuum cavity I, a coating vacuum cavity II, a support plate conversion vacuum cavity and a discharging heat dissipation vacuum cavity, the valve cavity 6 is connected between the vacuum cavities of the process cavity, the support plate conversion vacuum cavity is connected between the coating vacuum cavity I and the coating vacuum cavity II, and the support plate conversion vacuum cavity is used for conversion of a coating surface of the silicon wafer.
The valve cavity 6, the first film coating vacuum cavity, the second film coating vacuum cavity and the support plate conversion vacuum cavity form a silicon wafer film coating production line, double-sided film coating of the silicon wafer 7 and conversion of film coating surfaces of the silicon wafer are achieved through the silicon wafer film coating production line, occupied space of the silicon wafer film coating production line is reduced, the silicon wafer film coating production line in the embodiment can further comprise a loading preheating vacuum cavity and an unloading heat dissipation vacuum cavity, and the silicon wafer 7 is converted into a complete film coating process from preheating, film coating and film coating surfaces.
In this embodiment, the y direction in fig. 1 is the moving direction of the carrier device 3, and the x direction in fig. 1 is perpendicular to the moving direction of the carrier device 3.
The process cavity comprises a loading preheating vacuum cavity 12, a first film-coating vacuum cavity, a second film-coating vacuum cavity, a carrier plate conversion vacuum cavity 16 and a discharge heat dissipation vacuum cavity 19 which are formed by a plurality of vacuum cavities 14, wherein the first film-coating vacuum cavity comprises a first film-coating vacuum cavity 13 and a second film-coating vacuum cavity 15, the second film-coating vacuum cavity comprises a third film-coating vacuum cavity 17 and a fourth film-coating vacuum cavity 18, the first film-coating vacuum cavity 13 and the second film-coating vacuum cavity 15 are used for coating one side of a silicon wafer 7, the third film-coating vacuum cavity 17 and the fourth film-coating vacuum cavity 18 are used for coating the other side of the silicon wafer 7, a valve cavity 6 is arranged between the vacuum cavities, the valve cavities 6 isolate adjacent vacuum cavities from each other to avoid process pollution, the loading preheating vacuum cavity 12 is provided with a first valve 11, the discharge heat dissipation vacuum cavity 19 is provided with a second valve 10, and the first valve 11 and the second valve 10 isolate the equipment from the atmospheric environment.
The loading preheating vacuum cavity 12, the valve cavity 6, the first film-coating vacuum cavity 13, the valve cavity 6, the second film-coating vacuum cavity 15, the valve cavity 6, the carrier plate conversion vacuum cavity 16, the valve cavity 6, the third film-coating vacuum cavity 17, the valve cavity 6, the fourth film-coating vacuum cavity 18, the valve cavity 6 and the unloading heat dissipation vacuum cavity 19 are sequentially connected to form a production line of the vacuum film-coating equipment, the carrier plate device 3 loading the silicon wafer 7 is driven by the transmission structure 4 and runs along the production line to form a running path of the carrier plate device 3, and the loading preheating vacuum cavity 12, the valve cavity 6, the first film-coating vacuum cavity 13, the valve cavity 6, the second film-coating vacuum cavity 15, the valve cavity 6, the carrier plate conversion vacuum cavity 16, the valve cavity 6, the third film-coating vacuum cavity 17, the valve cavity 6, the fourth film-coating vacuum cavity 18, the valve cavity 6 and the unloading heat dissipation vacuum cavity 19 are preferably distributed in a flow line form, so that the running path of the carrier plate device 3 is shortened, and the floor area of the equipment is reduced.
The heating device 2 comprises a heater 21 and a heat source 22, a pair of heaters 21 is arranged on the loading preheating vacuum cavity 12, the first coating vacuum cavity, the second coating vacuum cavity and the carrier plate conversion vacuum cavity 16, the pair of heaters 21 are symmetrically arranged relative to the center line of the equipment, the direction of the center line of the equipment is the y direction in the embodiment, the center line of each vacuum cavity is collinear with the center line of the equipment, the heat source 22 is arranged on the center lines of the first coating vacuum cavity and the second coating vacuum cavity, a pair of special gas spraying devices 5 are arranged in the first coating vacuum cavity and the second coating vacuum cavity, and the pair of special gas spraying devices 5 are symmetrically arranged relative to the heat source 22.
The transmission structure 4 penetrates through the production line, the transmission structure 4 is provided with a pair of transmission structures 4, the pair of transmission structures 4 are symmetrically arranged relative to the central line of the equipment, one transmission structure 4 controls the operation of at least one carrier plate device 3, a plurality of carrier plate devices 3 on one transmission structure 4 are distributed along the operation path, the operation path of the carrier plate devices 3 is positioned between the special gas spraying device 5 and the heater 21, and the special gas spraying device 5 is used for spraying special gas, wherein the special gas is special gas for semiconductors.
As shown in fig. 1, the loading preheating vacuum cavity 12 and the carrier plate conversion vacuum cavity 16 are sequentially distributed with a transmission structure 4 and a heater 21 along the central line of the vacuum cavity to the outside direction of the vacuum cavity, the first coating vacuum cavity and the second coating vacuum cavity are sequentially distributed with a heat source 22, a special gas spraying device 5, a transmission structure 4 and a heater 21 along the central line of the vacuum cavity to the outside direction of the vacuum cavity, and the heater 21, the heat source 22 and the special gas spraying device 5 of each vacuum cavity operate independently.
As shown in fig. 3, the carrier plate device 3 includes a frame 30, a clamping groove 31 and a clamping pin 32, the silicon wafer 7 is disposed in the clamping groove 31 through the clamping pin 32, both sides of the silicon wafer 7 are not shielded by a large area, the effective area ratio of the coating film is increased, and the requirement of double-sided coating film is met, and the size and the number of the silicon wafers 7 loaded on the carrier plate device 3 can be set according to the production requirement of a customer, which is not further described herein.
As shown in fig. 4-6, the vacuum chamber 14 of the present embodiment is a multifunctional vacuum chamber, the vacuum chamber 14 can be a loading preheating vacuum chamber 12, a coating vacuum chamber one, a coating vacuum chamber two, a carrier conversion vacuum chamber 16 and a discharging heat dissipation vacuum chamber 19, and the vacuum chamber 14 can be used for different processes of coating, thereby achieving the requirement and purpose of multifunctional application of the vacuum chamber.
The vacuum chamber 14 includes a chamber frame 140, a front chamber door assembly and a rear chamber door assembly disposed on both sides of the chamber frame 140, the front chamber door assembly and/or the rear chamber door assembly being configured as a multi-chamber door structure.
The front cavity door assembly and the rear cavity door assembly are distributed along the x direction, the z direction in fig. 4 is the height direction of the vacuum cavity, the y direction in fig. 4 is the moving direction of the carrier plate device 3, and the y direction is the length direction of the vacuum cavity.
In this embodiment, the cavity frame 140 is a vertical square structure, a process chamber is arranged in the cavity frame 140, a silicon wafer is subjected to a film coating process in the process chamber, partition plates 147 are arranged on two sides of the cavity frame 140, beam frames 145 are arranged on the partition plates 147, the beam frames 145 on the two sides are preferably symmetrically arranged, a plurality of reinforcing ribs are arranged on the beam frames 145, the beam frames 145 are provided with a plurality of dry pump docking flanges 146, and the plurality of dry pump docking flanges 146 are distributed along the height direction of the vacuum cavity.
In the embodiment, the dry pump butt flange 146 is arranged on the beam frame 145, so that the opening of the cavity door is not interfered, and the maintenance efficiency is improved.
The cavity frame 140 is at least unilaterally configured as a multi-cavity door structure, such as the front cavity door assembly configured as a single-cavity door structure and the rear cavity door assembly configured as a multi-cavity door structure, or the front cavity door assembly configured as a multi-cavity door structure and the rear cavity door assembly configured as a single-cavity door structure, or both the front cavity door assembly and the rear cavity door assembly configured as a multi-cavity door structure.
In this embodiment, a plurality of connecting mechanisms are disposed between the front cavity door assembly and the cavity frame 140, a plurality of connecting mechanisms are disposed between the rear cavity door assembly and the cavity frame 140, the connecting mechanisms can be set as hinges 148, the front cavity door assembly includes a plurality of cavity doors, the plurality of cavity doors are distributed along the y direction, the number of the cavity doors in this embodiment is set as two, specifically, the first cavity door 141 and the second cavity door 142 are distributed along the y direction, the rear cavity door assembly includes a plurality of cavity doors, the plurality of cavity doors are distributed along the y direction, the number of the cavity doors in this embodiment is set as two, specifically, the third cavity door 143 and the fourth cavity door 144, the third cavity door 143 and the fourth cavity door 144 are distributed along the y direction, the front cavity door assembly or/and the rear cavity door assembly opens or closes the cavity doors in the y direction, the first cavity door 141, the second cavity door 142, the third cavity door 143 and the fourth cavity door 144 are respectively connected with the cavity frame 140 through hinges 148, the number of the hinges 148 on any one of the first cavity door 141, the second cavity door 142, the third cavity door 143 and the fourth cavity door 144 is preferably set to be 3, the 3 hinges 148 are uniformly distributed along the height direction of the vacuum cavity, the deformation of the hinges 148 is prevented, and the connection strength of the front cavity door assembly and the rear cavity door assembly with the cavity frame 140 is ensured.
The partition 147 of the present embodiment is disposed between adjacent doors of the front or/and rear door assemblies.
In the embodiment, the width of the cavity door is not more than 1.5m, preferably 1.3m, and the width direction of the cavity door is the y direction, so that compared with the existing single-side single-cavity door structure of the cavity frame 140, the mass of the single cavity door is reduced through the structure of the multiple cavity doors, the load on the hinge 148 is reduced, and the service life of the hinge 148 is prolonged; meanwhile, the size of the cavity door is reduced, so that the production and processing difficulty is reduced, the smaller size is not easy to deform under the same condition, the strength and the service life of the cavity door can be improved, the better sealing performance is realized, and the vacuum degree of the vacuum cavity can be effectively guaranteed.
In this embodiment, the first cavity door 141 and the second cavity door 142 of the front cavity door assembly, and the third cavity door 143 and the fourth cavity door 144 of the rear cavity door assembly are opened synchronously, so that the equipment maintenance space is increased, the operation of workers is facilitated, and the maintenance efficiency is improved; the area occupied by opening the cavity door is half or less than that of the existing structure, and the occupied area of equipment is reduced.
In the present embodiment, the cavity frame 140, the front cavity door assembly and the rear cavity door assembly may be made of aluminum, aluminum alloy, stainless steel, etc.
The multi-cavity door structure of the vacuum cavity can be applied to cavities of other equipment, and is not limited to vacuum coating equipment.
As shown in fig. 7 to 12, the transmission structure 4 includes a positioning support mechanism 41, a power mechanism 42 and a positioning mechanism 43, the positioning support mechanism 41 includes a rack 415, the rack 415 is disposed on the carrier plate device 3, the power mechanism 42 includes a power gear 424, and the rack 415 is engaged with the power gear 424.
The carrier board device 3 comprises a frame 30, and the frame 30 comprises an upper frame plate 301 and a lower frame plate 302, wherein the upper frame plate 301 and the lower frame plate 302 are distributed along the up-down direction, which is the z direction in the figure.
The positioning support mechanism 41 includes a support frame 411, a support member, a rack 415 and a support plate 416, the length direction of the support frame 411 is parallel to the moving direction of the carrier device 3, and the support frame 411 is disposed on the top of the vacuum chamber.
The supporting components are provided with a plurality of supporting components arranged on the support 411 along the moving direction of the carrier plate device 3, each supporting component comprises a wheel mounting rack 412, a supporting wheel 413 and a positioning wheel 414, and the supporting wheels 413 and the positioning wheels 414 are arranged on the wheel mounting rack 412.
The rack 415 and the support plate 416 are respectively disposed on two side surfaces of the upper frame plate 301, a length direction of the rack 415 is parallel to a moving direction of the carrier plate device 3, the plurality of support plates 416 are distributed along the moving direction of the carrier plate device 3, the rack 415 and the positioning wheel 414 are located on the same side, the support plate 416 and the support wheel 413 are located on the same side, a clamping block (not shown) is disposed on a lower end surface of the rack 415, the positioning wheel 414 is provided with a clamping groove (not shown), a cross section of the clamping block is the same as a cross section of the clamping groove, if the clamping block is set to be a V-shaped structure, the clamping groove is set to be a V-shaped groove, the clamping block is buckled into the clamping groove, the clamping groove and the clamping groove are connected, or the lower end surface of the rack 415 is provided with a clamping groove (not shown), the positioning wheel 414 is provided with a clamping block (not shown), preferably, the positioning wheel 414 is a V-shaped wheel, the clamping block of the rack 415 is set to be a V-shaped structure, and the rack 415 is connected with the clamping groove of the positioning wheel 414, thereby positioning of the carrier plate device 3 is positioned, and the carrier plate device 3 is no longer positioned depending on the appearance, thereby improving the positioning accuracy of the carrier plate device 3, reducing the processing difficulty of the whole processed parts, and reducing the equipment cost.
The supporting wheel 413 is located at the lower side of the supporting plate 416, and during the operation of the carrier plate device 3, the supporting wheel 413 and the supporting plate 416 are kept in a fit state, and the supporting wheel 413 supports the supporting plate 416, so that the carrier plate device 3 is suspended and supported by the meshing action of the rack 415 and the positioning wheel 414 and the supporting wheel 413 and the supporting plate 416.
The power mechanism 42 includes a motor assembly 421, a magnetic fluid 422, a coupler 423, a power gear 424, a bearing housing 425 and a power rotating shaft 426, the bearing housings 425 are provided with a pair, the pair of bearing housings 425 are located at two sides of the positioning support mechanism 41 and are arranged at the top of a chamber of the vacuum chamber, the chamber of the vacuum chamber is a working area and a moving area of a silicon wafer, the power rotating shaft 426 penetrates through the pair of bearing housings 425 and is rotatably connected with the pair of bearing housings 425, the axis of the power rotating shaft 426 is perpendicular to the moving direction of the carrier plate device 3, the power gear 424 is arranged on the outer surface of the power rotating shaft 426, the power gear 424 is meshed with the rack 415 to realize motion transmission, one end of the power rotating shaft 426 is connected with the magnetic fluid 22 through the coupler 423, the magnetic fluid 22 is connected with the motor assembly 421 through a fastening mechanism, the axis of the power rotating shaft 426, the axis of the coupler 423, the axis of the magnetic fluid 422 and the axis of the motor assembly 421 are collinear, the motor assembly 4221 of the magnetic fluid 422 is connected with the cavity frame 40 of the vacuum chamber, the vacuum chamber 422 is isolated through the magnetic fluid 422, and the vacuum chamber 422 is sealed inside and outside the vacuum chamber is ensured.
In this embodiment, the power mechanism 42 drives the carrier plate device 3 to move through the meshing action of the power gear 424 and the rack 415, the transmission efficiency of the power gear 424 and the rack 415 is higher than that of the existing carrier roller structure, the positioning accuracy of the transmission of the power gear 424 and the rack 415 is high, the difference between the operation position of the carrier plate device 3 in the cavity and a theoretical value is small, which is beneficial to the fine management of the whole device, the meshing position of the power gear 424 and the rack 415 is located at the top of the carrier plate device 3, and for a large carrier plate of a mass production machine, the operation stability of the carrier plate device 3 is improved, and the risk of silicon wafer fragments is effectively reduced.
In this embodiment, the plurality of power mechanisms 42 are disposed, the plurality of power mechanisms 42 along the moving direction of the carrier plate device 3 are distributed in the vacuum chamber, the plurality of supporting components are disposed, and the plurality of supporting components along the moving direction of the carrier plate device 3 are distributed on the bracket 411, so as to ensure the positioning function and the power transmission requirement of the carrier plate device 3 during the operation process.
As shown in fig. 7, the positioning mechanism 43 is disposed at the bottom of the vacuum chamber, the distance between the positioning mechanism 43 and the positioning support mechanism 41 matches the dimension of the carrier plate device 3 in the height direction of the vacuum chamber, the positioning support mechanism 41 is connected to the upper frame plate 301 of the carrier plate device 3 to position and support the upper end of the carrier plate device 3, and the positioning mechanism 43 is connected to the lower frame 302 of the carrier plate device 3 to position the lower end of the carrier plate device 3.
The positioning mechanism 43 comprises a positioning bracket 431 and a positioning component, the length direction of the positioning bracket 431 is parallel to the moving direction of the carrier device 3, the positioning bracket 431 is connected with the bottom inside the vacuum chamber, and the positioning bracket 431 is arranged parallel to the bracket 411.
The positioning components are provided with a plurality of positioning components, the positioning components are arranged on the positioning support 431 along the moving direction of the carrier plate device 3, the positioning components comprise a positioning fixing plate 432 and a pair of positioning rods 433, the positioning rods 433 are provided with rollers 434, the pair of positioning rods 433 are symmetrically positioned at two sides of the positioning fixing plate 432, the distance between the rollers 434 is larger than the width of the lower frame 302, when the carrier plate device 3 moves under the driving of the power mechanism 42, the lower frame 302 of the carrier plate device 3 moves between the pair of positioning rods 433 of the positioning components, the rollers 434 are in contact with the end surface of the lower frame 302, so that the further positioning and limiting of the movement of the carrier plate device 3 are realized, and the carrier plate device 3 is kept stable in the moving process.
In order to ensure that the lower frame 302 of the carrier plate device 3 can accurately enter between the pair of positioning rods 433 of the positioning assemblies, the two ends of the lower frame 302 in the moving direction thereof are set to be pointed structures, i.e. the sizes of the two ends of the lower frame 302 are gradually reduced, so as to conveniently and accurately enter between the pair of positioning rods 433 of different positioning assemblies.
The transmission structure 4 of this embodiment supports and positions the carrier plate device 3 by the supporting function of the supporting plate 416 by the supporting wheel 413 and the supporting function of the rack 415 by the positioning wheel 414, so as to realize the suspension and support of the carrier plate device 3, and further positions and limits the carrier plate device 3 by the positioning function of the positioning mechanism 43 on the lower frame 302, the motor assembly 421 is started to drive the power gear 424 to rotate by the magnetic fluid 422 and the coupling 423, the power gear 424 is meshed and connected with the rack 415, and the rack 415 is driven to run along the moving space by the rotation of the power gear 424, so as to realize the movement of the carrier plate device 3 between different vacuum chambers.
The transmission structure 4 of the embodiment can be applied to power transmission of equipment thereof, and is not limited to vacuum coating equipment.
As shown in fig. 13-15, the pitch-varying structure 8 includes a pitch-varying power assembly 81, a pitch-varying transmission assembly 82, a telescopic assembly 83 and a docking assembly 84, the pitch-varying power assembly 81 is connected to the pitch-varying transmission assembly 82, the pitch-varying transmission assembly 82 is connected to the telescopic assembly 83, the telescopic assembly 83 is connected to the docking assembly 84, and the pitch-varying power assembly 81 controls the movement of the carrier plate device 3, preferably the distance between the silicon wafer loaded on the carrier plate device 3 and the special gas spraying device 5 or/and the heat source 22, through the pitch-varying transmission assembly 82, the telescopic assembly 83 and the docking assembly 84.
The variable pitch structure 8 is arranged on the vacuum cavity 14, the variable pitch structure 8 further comprises a mounting bracket 85, the variable pitch power assembly 81 and the variable pitch transmission assembly 82 are arranged on the mounting bracket 85, the mounting bracket 85 is arranged on the outer side surface of the vacuum cavity 14, and the outer side surface of the vacuum cavity 14 is positioned outside the vacuum cavity 14.
The pitch power assembly 81 includes a motor, an output shaft of which is connected to the pitch transmission assembly 82 through a first bearing 86 and transmits power to the pitch transmission assembly 82.
The variable-pitch transmission assembly 82 comprises a lead screw nut 821, a lead screw 822 and a pair of fixing seats 823, the pair of fixing seats 823 is arranged on the mounting bracket 85, one end of the lead screw 822 is rotatably connected with one fixing seat 823, the other end of the lead screw 822 rotatably penetrates through the other fixing seat 823 and is connected with the first bearing 86, the variable-pitch power assembly 81 transmits power to the lead screw 822 through the first bearing 86, the lead screw nut 821 is in threaded connection with the lead screw 822, the lead screw nut 821 is in sliding connection with the mounting bracket 85, and when the lead screw 822 rotates, the lead screw nut 821 moves along the axial direction of the lead screw 822.
The variable-pitch transmission assembly 82 further comprises an isolation plate 824, the isolation plate 824 is connected with the mounting bracket 85 and the variable-pitch power assembly 81, the isolation plate 824, the mounting bracket 85 and the variable-pitch power assembly 81 form an isolation space, a lead screw nut 821, a lead screw 822 and a pair of fixing seats 823 of the variable-pitch transmission assembly 82 are located in the isolation space, and the isolation plate 824 plays a certain protection role on the variable-pitch transmission assembly 82.
The pitch-changing structure 8 further comprises a plurality of sensors 88, and the sensors 88 are used for sensing the position of the lead screw nut 821 and preventing the lead screw nut 821 from colliding with the fixed seat 823.
The telescopic assembly 83 comprises a moving flange 831, a corrugated pipe 832 and a fixed flange 833, two ends of the corrugated pipe 832 are connected with the moving flange 831 and the fixed flange 833, the fixed flange 833 is connected with a butt flange 149 on the outer side surface of the vacuum cavity 14, a sealing ring is arranged between the fixed flange 833 and the butt flange 149 to ensure the sealing performance of the corrugated pipe and the vacuum cavity 14, the corrugated pipe 832 and the vacuum cavity 14 are in the same vacuum environment, the moving flange 831 is connected with a lead screw nut 821, and the telescopic assembly 83 is located outside the cavity of the vacuum cavity 14.
The docking assembly 84 includes a docking rod 841 and a docking block 842, one end of the docking rod 841 is inserted into a bellows 832 and connected with a movable flange 831, the other end of the docking rod 841 is connected with the docking block 842, the docking block 842 is located inside the vacuum chamber 14, the carrier device 3 is loaded with silicon wafers, the carrier device 3 is disposed in the cavity of the vacuum chamber 14 through a positioning support mechanism 41 and a positioning mechanism 43, the positioning support mechanism 41 includes a bracket 411, the positioning mechanism 43 includes a positioning bracket 431, the length directions of the bracket 411 and the positioning bracket 431 are parallel to the moving path of the carrier device 3 between different vacuum chambers 14, the docking block 842 is respectively connected with the bracket 411 and the positioning bracket 431, a sliding device 87 is disposed between the bracket 411 and the positioning bracket 431 and the vacuum chamber 14, the sliding device 87 includes a fixing plate 872 and a slider 871, the fixing plate 872 is connected with the vacuum chamber 14, the slider 871 is respectively connected with the bracket 411 and the positioning bracket 431, and the fixing plate 872 are slidably connected.
In the implementation process of the variable pitch structure 8, the variable pitch power assembly 81 is started to drive the lead screw 822 to rotate, the lead screw 822 rotates to enable the lead screw nut 821 to move axially along the lead screw 822, the lead screw nut 821 moves to synchronously drive the moving flange 831 to move axially along the lead screw 822, the moving flange 831 moves to drive the butt-joint block 842 to move, the butt-joint block 842 moves to drive the support 411 to move, the support plate device 3 is suspended and supported on the support 411, and the support 411 moves to further drive the support plate device 3 to move synchronously, so that the distance between a silicon wafer loaded by the support plate device 3 and the special gas spray device 5 or/and the heat source 22 is adjusted, in the embodiment, the distance between the silicon wafer and the special gas spray device 5 or/and the heat source 22 is adjusted through the variable pitch transmission assembly 82, the range of the adjustment interval is wide, and the distance requirements of different silicon wafers and different processes can be met; in this embodiment, the fixing flange 833 of the telescopic assembly 83 is connected to the docking flange 149 on the outer side of the vacuum chamber 14, a sealing ring is disposed between the fixing flange 833 and the docking flange 149 to ensure the sealing property between the bellows and the vacuum chamber 14, and the moving flange 831 is connected to the variable pitch transmission assembly 82 to achieve the axial reciprocating motion of the carrier plate device 3, thereby achieving the effect of adjusting the distance between the silicon wafer and the special gas spraying device 5 or/and the heat source 22.
As shown in fig. 14, a plurality of pitch-varying structures 8 are provided, the pitch-varying structures 8 are distributed at the upper end and the lower end of the vacuum chamber 14 along the height direction of the vacuum chamber 14, and the pitch-varying structures 8 are distributed along the running path of the carrier plate device 3, so as to ensure that the carrier plate device 3 is kept stable during the pitch adjustment process.
The pitch-variable structure 8 of the embodiment can be applied to the pitch-variable adjustment of the equipment, and is not limited to vacuum coating equipment.
As shown in fig. 15, a pair of carrier devices 3 are generally disposed in the vacuum chamber 14, the carrier devices 3 are symmetrically disposed with respect to the axis of the vacuum chamber 14, a plurality of pitch-varying structures 8 are respectively disposed at two sides of the door of the vacuum chamber 14, and the pitch-varying structures 8 respectively adjust the distance between the pair of carrier devices 3 and the special gas spraying device 5 or/and the heat source 22.
In other embodiments, the docking block 842 of the docking assembly 84 may be directly connected to the carrier plate arrangement 3.
In the implementation process of the embodiment, the silicon wafer 7 is loaded on the support plate device 3, the support plate device 3 is suspended, supported and positioned by the positioning support mechanism 41, the support plate device 3 is positioned and limited by the positioning mechanism 43 below, the power mechanism 42 drives the support plate device 3 to move in the moving path, the power mechanism 42 conveys the support plate device 3 to the loading preheating vacuum cavity 12, the heater 21 in the loading preheating vacuum cavity 12 is started, and the heat radiation of the heater 21 preheats the silicon wafer 7 loaded on the support plate device 3 before the coating process; the power mechanism 42 conveys the support plate device 3 to the first coating vacuum cavity 13, the transmission mechanism 4 is started, the distance between the silicon wafer 7 loaded on the support plate device 3 and the special gas spraying device 5 and the heat source 22 in the first coating vacuum cavity 13 is adjusted to a set value, the heater 21 in the first coating vacuum cavity 13 is started, the heat source 22 is started, the special gas released by the special gas spraying device 5 is decomposed by the heat source 22, and one surface of the silicon wafer 7 is coated with an intrinsic amorphous silicon film; the power mechanism 42 conveys the support plate device 3 to the second coating vacuum cavity 15, the transmission mechanism 4 is started, the distance between the silicon wafer 7 loaded on the support plate device 3 and the special gas spraying device 5 and the heat source 22 in the second coating vacuum cavity 15 is adjusted to a set value, the heater 21 in the second coating vacuum cavity 15 is started, the heat source 22 is started, the special gas released by the special gas spraying device 5 is decomposed by the heat source 22, and one surface of the silicon wafer 7 is coated with the n-type doped silicon-based film; the power mechanism 42 conveys the support plate device 3 to the support plate conversion vacuum cavity 16, a conversion mechanism is arranged in the support plate conversion vacuum cavity 16, the support plate device 3 on the transmission structure 4 at one side is converted to the transmission structure 4 at the other side through the conversion mechanism, the positions of the support plate devices 3 on the transmission structures 4 at two sides are replaced, the coated surface of the silicon wafer loaded by the support plate device 3 faces the outside of the cavity, and the uncoated surface faces the heat source 22; the power mechanism 42 conveys the carrier plate device 3 with the switched position to the third coating vacuum cavity 17, the transmission mechanism 4 is started, the distance between the silicon wafer 7 loaded on the carrier plate device 3 and the special gas spraying device 5 and the heat source 22 in the third coating vacuum cavity 17 is adjusted to a set value, the heater 21 in the third coating vacuum cavity 17 is started, the heat source 22 is started, the special gas released by the special gas spraying device 5 is decomposed through the heat source 22, and the intrinsic amorphous silicon film is plated on the other surface, namely the uncoated surface, of the silicon wafer 7; the power mechanism 42 conveys the carrier plate device 3 to the fourth coating vacuum cavity 18, the transmission mechanism 4 is started, the distance between the silicon wafer 7 loaded on the carrier plate device 3 and the special gas spraying device 5 and the heat source 22 in the fourth coating vacuum cavity 18 is adjusted to a set value, the heater 21 in the fourth coating vacuum cavity 18 is started, the heat source 22 is started, the special gas released by the special gas spraying device 5 is decomposed through the heat source 22, and the other surface of the silicon wafer 7 is coated with the p-type doped silicon-based film; the power mechanism 42 conveys the carrier plate device 3 which finishes film coating to the unloading heat dissipation vacuum cavity 19, a cooling structure is arranged in the unloading heat dissipation vacuum cavity 19, the cooling structure provides normal-temperature gas to cool the silicon wafer in a heat dissipation manner, and the power mechanism 42 drives the carrier plate device 3 to flow out of the equipment after cooling is finished.
In the embodiment, the function of double-sided coating of the silicon wafer 7 on a closed production line is realized by virtue of the support plate device 3 capable of double-sided coating and the support plate conversion vacuum cavity 16, and in the coating process, the silicon wafer 7 realizes conversion of the coating surface of the silicon wafer in the support plate conversion vacuum cavity 16, the silicon wafer is not in contact with the atmosphere any more, the adverse effect of factors such as water vapor, oxygen, dust and the like in the air on the performance of the silicon wafer 7 is avoided, and the production quality of the silicon wafer 7 is improved.
The whole vacuum cavity of the embodiment is distributed in a flow line mode, the running path of the support plate device 3 is shortened, an automatic turnover mechanism is not additionally arranged to convert the film coating surface of the silicon wafer, the equipment cost is reduced, the occupied area of the equipment is saved, the use efficiency of a customer site is improved, and the effects of high equipment process integration level, high equipment operation efficiency and low equipment cost are achieved.
Other ways of engaging the rack 415 with the positioning wheel 414 and movably connecting the rack 415 with the positioning wheel 414 are also within the scope of the present application.
Example two:
as shown in fig. 16, the present embodiment is different from the first embodiment in that: in the first embodiment, the first and second doors 141 and 142 of the front door assembly are distributed along the y direction, the third and fourth doors 143 and 144 of the rear door assembly are distributed along the y direction, and the front door assembly or/and the rear door assembly open or close the doors in the y direction, whereas in the first embodiment, the first and second doors 141 and 142 of the front door assembly are distributed along the z direction, the third and fourth doors 143 and 144 of the rear door assembly are distributed along the z direction, and the front door assembly or/and the rear door assembly open or close the doors in the z direction.
Example three:
the difference between the present embodiment and the first embodiment is: in the first embodiment, the valve cavity 6, the first coating vacuum cavity, the second coating vacuum cavity and the support plate conversion vacuum cavity 16 form a silicon wafer coating production line, in the first embodiment, the valve cavity 6, the first coating vacuum cavity, the second coating vacuum cavity and the support plate conversion vacuum cavity 16 form a plurality of silicon wafer coating production lines, one production line can be used for coating on one side of the silicon wafer 7, and one growth line can be used for coating on the other side of the silicon wafer 7, in addition, the support plate conversion vacuum cavity 16 can also form a growth line for conversion of the coating surface of the silicon wafer, the silicon wafer 7 is converted on the coating surface of the closed support plate conversion vacuum cavity, the silicon wafer 7 is not in contact with the atmosphere, the adverse effects of factors such as water vapor, oxygen and dust in the air on the performance of the silicon wafer 7 are avoided, and the production quality of the silicon wafer 7 is improved.
In other embodiments, the pitch-variable transmission assembly 82 may adopt a gear-rack transmission structure, a gear is engaged with a rack, the rack is connected with the movable flange 831, the pitch-variable power assembly 81 drives the gear to rotate, the gear drives the rack to move through an engagement effect, the rack moves to drive the movable flange 831 to move, and the subsequent pitch adjustment process is the same as that in the first embodiment, which is not described herein again; or the pitch-variable transmission assembly 82 may adopt a gear transmission belt transmission structure, a gear drives the transmission belt to transmit, the movable flange 831 is disposed on the transmission belt, the pitch-variable power assembly 81 drives the gear to rotate, the gear drives the transmission belt to move, the transmission belt moves to drive the movable flange 831 to move, and the subsequent pitch adjustment process is the same as that of the first embodiment, and is not described herein again; or the pitch-variable transmission assembly 82 may adopt a cam structure, the pitch-variable power assembly 81 is connected with the driving end of the cam, the driven end of the cam is connected with the moving flange 831, the pitch-variable power assembly 81 drives the cam to rotate, the driven end of the cam drives the moving flange 831 to move, and the subsequent pitch adjustment process is the same as that in the first embodiment and is not described herein again.
In other embodiments, the telescoping assembly 83 may be a multi-layer sleeve structure, the outer sleeve is connected to the vacuum chamber 14, the inner sleeve is located inside the outer sleeve, the inner sleeve is slidably connected to the outer sleeve and maintains the sealing performance, one end of the inner sleeve is connected to the docking rod 841, and the other end of the inner sleeve is connected to the variable-pitch transmission assembly 82, so that the docking rod 841 can be moved through the multi-layer sleeve structure.
It is obvious that the described embodiments are only some of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by a person skilled in the art without creative efforts shall fall within the protection scope of the present invention.

Claims (10)

1. The utility model provides a vacuum chamber's displacement structure which characterized in that: the variable-pitch power assembly is connected with the variable-pitch transmission assembly, the variable-pitch transmission assembly is connected with the telescopic assembly, the telescopic assembly is connected with the butt joint assembly, and the variable-pitch power assembly controls the support plate device to move through the variable-pitch transmission assembly, the telescopic assembly and the butt joint assembly.
2. The pitch structure of a vacuum chamber according to claim 1, wherein: the telescopic assembly comprises a moving flange, a corrugated pipe and a fixed flange, the two ends of the corrugated pipe are connected with the moving flange and the fixed flange, the fixed flange is connected with a butt flange on the outer side of the vacuum cavity, a sealing ring is arranged between the fixed flange and the butt flange, the moving flange is connected with the variable-pitch transmission assembly, and the telescopic assembly is located outside the cavity of the vacuum cavity.
3. A pitch structure of a vacuum chamber according to claim 1, wherein: the butt joint assembly comprises a butt joint rod and a butt joint block, one end of the butt joint rod is connected with the movable flange, the other end of the butt joint rod is connected with the butt joint block, the butt joint block is located inside the vacuum cavity, and the butt joint block is connected with the support plate device.
4. A pitch structure of a vacuum chamber according to claim 1, wherein: the vacuum cavity comprises a vacuum cavity body, a vacuum cavity body and a support plate device, wherein the support plate device bears a silicon wafer, the support plate device is arranged in a cavity of the vacuum cavity body through a positioning support mechanism and a positioning mechanism, the positioning support mechanism comprises a support, and the positioning mechanism comprises a positioning support.
5. A pitch structure of a vacuum chamber according to claim 4, wherein: the butt joint assembly comprises a butt joint rod and a butt joint block, one end of the butt joint rod is connected with the movable flange, the other end of the butt joint rod is connected with the butt joint block, the butt joint block is located inside the vacuum cavity, the butt joint block is respectively connected with the support and the positioning support, sliding devices are arranged between the support and the vacuum cavity, each sliding device comprises a fixing plate and a sliding block, the fixing plates are connected with the vacuum cavity, the sliding blocks are respectively connected with the support and the positioning support, and the sliding blocks are connected with the fixing plates in a sliding mode.
6. A pitch structure of a vacuum chamber according to claim 1, wherein: the variable-pitch power assembly comprises a motor, and an output shaft of the motor is connected with the variable-pitch transmission assembly through a first bearing.
7. The pitch structure of a vacuum chamber according to claim 1, wherein: the vacuum pump is characterized by further comprising a mounting support, wherein the variable-pitch power assembly and the variable-pitch transmission assembly are arranged on the mounting support, and the mounting support is arranged on the outer side surface of the vacuum cavity.
8. A pitch structure of a vacuum chamber according to claim 7, wherein: the variable-pitch transmission assembly comprises a lead screw nut, a lead screw and a fixed seat, the fixed seat is arranged on the mounting support, the lead screw is rotatably connected with the fixed seat, and one end of the lead screw is connected with the variable-pitch power assembly.
9. A pitch structure of a vacuum chamber according to claim 1, wherein: the lead screw nut positioning device further comprises a plurality of sensors, and the sensors are used for sensing the position of the lead screw nut.
10. A pitch structure of a vacuum chamber according to claim 8, wherein: the distance between the silicon chip carried by the carrier plate device and the special gas spraying device or/and the heat source is adjusted by the variable-pitch power assembly through the variable-pitch transmission assembly, the telescopic assembly and the butt joint assembly.
CN202221584330.6U 2022-06-23 2022-06-23 Variable pitch structure of vacuum cavity Active CN218089795U (en)

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CN202221584330.6U CN218089795U (en) 2022-06-23 2022-06-23 Variable pitch structure of vacuum cavity
PCT/CN2022/118598 WO2023245882A1 (en) 2022-06-23 2022-09-14 Variable distance structure

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Application Number Priority Date Filing Date Title
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CN101748377B (en) * 2010-01-07 2011-11-23 中国科学院半导体研究所 Reaction chamber of metal organism chemical deposition equipment
KR101243743B1 (en) * 2010-02-18 2013-03-13 주식회사 아바코 Substrate transferring apparatus, substrate processing apparatus with it and substrate processing method using it
CN104549849B (en) * 2014-12-19 2017-01-11 上海交通大学 Automatic spraying robot device
US10636687B2 (en) * 2016-01-18 2020-04-28 Applied Materials, Inc. Apparatus for transportation of a substrate carrier in a vacuum chamber, system for vacuum processing of a substrate, and method for transportation of a substrate carrier in a vacuum chamber
CN109715849B (en) * 2017-08-25 2020-12-22 应用材料公司 Apparatus for transporting a carrier in a vacuum chamber, system for vacuum processing a substrate, and method for transporting a carrier in a vacuum chamber
WO2019037873A1 (en) * 2017-08-25 2019-02-28 Applied Materials, Inc. Assembly for lifting or lowering a carrier, apparatus for transportation of a carrier in a vacuum chamber, and method for lifting or lowering a carrier
CN216435860U (en) * 2019-04-03 2022-05-03 应用材料公司 Carrier transport system and vacuum deposition system
DE102020130209A1 (en) * 2020-11-16 2022-05-19 Applied Materials, Inc. Vacuum processing system, support structure and method for transporting a substrate

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