KR20230059875A - Process Block for Photolithography Instruments and Photolithography Instruments using therof - Google Patents

Process Block for Photolithography Instruments and Photolithography Instruments using therof Download PDF

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KR20230059875A
KR20230059875A KR1020210142691A KR20210142691A KR20230059875A KR 20230059875 A KR20230059875 A KR 20230059875A KR 1020210142691 A KR1020210142691 A KR 1020210142691A KR 20210142691 A KR20210142691 A KR 20210142691A KR 20230059875 A KR20230059875 A KR 20230059875A
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unit
wafer
block
photolithography
coating
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KR1020210142691A
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KR102619709B1 (en
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김주원
박동운
오창석
류서홍
김덕수
장종수
김시은
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세메스 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Optical Integrated Circuits (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention relates to a processing block for a photolithography device and a photolithography device using the same, capable of efficiently controlling a temperature of a wafer. The processing block for a photolithography device, comprises: a first buffer unit located on a carrier block side; a second buffer unit for temporarily storing a wafer; a spin unit; a bake unit for heating or cooling the wafer; a temperature control unit for controlling a temperature of the wafer; a main transmission robot; a first auxiliary transmission robot; and a second auxiliary transmission robot.

Description

포토리소그래피 장치용 처리 블록 및 이를 이용한 포토리소그래피 장치{Process Block for Photolithography Instruments and Photolithography Instruments using therof}Processing block for photolithography device and photolithography device using the same {Process Block for Photolithography Instruments and Photolithography Instruments using therof}

본 발명은 필요한 공정에 따라 레지스트막 코팅, 반사막 코팅, 현상 등의 공정을 처리할 수 있도록 구성되어 상하방향으로 여러 개 적층된 포토리소그래피 장치용 처리 블록 및 이를 이용한 포토리소그래피 장치에 관한 것으로서 보다 상세하게는 온조 유닛을 스핀 유닛 또는 베이크 유닛과 인접하게 설치함으로써 보다 효율적으로 웨이퍼의 온도 조정할 수 있고 공정 시간을 단축할 수 있도록 구조가 개선된 포토리소그래피 장치용 처리 블록 및 이를 이용한 포토리소그래피 장치에 관한 것이다.The present invention relates to a processing block for a photolithography device configured to process processes such as resist film coating, reflective film coating, development, etc. according to necessary processes and stacked in several layers in a vertical direction, and to a photolithography device using the same, in more detail. relates to a processing block for a photolithography device having an improved structure and a photolithography device using the same, in which a temperature control unit is installed adjacent to a spin unit or a bake unit so that wafer temperature can be more efficiently adjusted and process time can be reduced.

포토리소그래피(Photolithography) 공정은 반도체나 디스플레이 공정에서 많이 사용되는 공정으로서 포토 공정이라고도 불리며 사진 인쇄 기술과 비슷하게 빛을 이용하여 복잡한 회로 패턴을 제조하는 방법이다. A photolithography process is a process widely used in semiconductor or display processes, also called a photo process, and is a method of manufacturing complex circuit patterns using light similar to photo printing technology.

포토리소그래피 공정은 웨이퍼에 레지스트막을 도포(코팅)하고, 포토 마스크를 이용하여 레지스트막을 노광한 후 현상 처리를 통해 원하는 패턴을 얻는 공정을 포함한다.The photolithography process includes a process of applying (coating) a resist film on a wafer, exposing the resist film using a photo mask, and then obtaining a desired pattern through a developing process.

이때, 코팅, 노광, 현상 등은 각각 개별적인 장치 유닛에 의해 이루어지며, 웨이퍼를 가열 또는 냉각하기 위한 가열 유닛, 냉각 유닛, 온도 조절을 위한 온조 유닛 등이 더 포함된 상태로 운영된다. 또한, 공정의 순서에 따라 어느 하나의 장치 유닛에서 다른 장치 유닛으로 이송하는 전송로봇(로봇)도 포토리소그래피 공정에 필수적인 장치이다.At this time, coating, exposure, development, etc. are performed by individual device units, and are operated in a state in which a heating unit for heating or cooling the wafer, a cooling unit, a temperature control unit for temperature control, and the like are further included. In addition, a transfer robot (robot) that transfers from one device unit to another according to the order of the process is also an essential device for the photolithography process.

이러한 포토리소그래피 공정을 위한 장치가 대한민국 공개특허 제10-2011-0128766호에 개시되어 있다.An apparatus for such a photolithography process is disclosed in Korean Patent Publication No. 10-2011-0128766.

상기 특허에 개시된 장치는 도포막 형성용 단위 블럭과 현상 처리용 단위 블럭이 상하방향으로 적층되는 형태로 설치되는데, 각각의 단위 블럭은 액처리 유닛, 가열 유닛, 반송 수단(이송용 로봇) 등의 구성을 포함하고 있다.The apparatus disclosed in the above patent is installed in a form in which a unit block for forming a coating film and a unit block for developing processing are stacked vertically, and each unit block is a liquid processing unit, a heating unit, a transport means (transfer robot), etc. contains the configuration.

단위 블럭을 상하방향으로 적층하면, 공정에 따라 처리 블럭을 선택적으로 활용함으로써 제품 생산 효율을 높일 수 있고, 상대적으로 적은 면적에 장치를 설치할 수 있어 공간 활용도가 높은 장점이 있다.When the unit blocks are stacked in the vertical direction, product production efficiency can be increased by selectively utilizing processing blocks according to the process, and space utilization can be increased because the device can be installed in a relatively small area.

한편, 상기 특허에 개시된 발명은 도포 처리 단위 블록과 현상 처리 단위 블록 모두에 가열 처리 유닛(웨이퍼를 가열하거나 냉각하는 공정을 수행하는 유닛), 웨이퍼의 온도 조정을 위한 온조 유닛이 포함되어 있는 특징과 액처리 유닛이나 현상 유닛은 가열 처리 유닛과 서로 마주보도록 배치되어 있는 특징이 있고, 수수 수단(transfer robot)은 가열 처리 유닛에 인접하도록 배치되는 특징도 포함하고 있다.On the other hand, the invention disclosed in the above patent is characterized in that both the coating processing unit block and the developing processing unit block include a heating processing unit (a unit that performs a process of heating or cooling a wafer) and a temperature control unit for adjusting the temperature of the wafer. The liquid processing unit or the developing unit has a feature of being disposed to face the heat processing unit, and a transfer robot also includes a feature of being disposed adjacent to the heat processing unit.

그런데 전술한 특허발명은 별도의 온조 유닛을 포함하고 있는데 온조 유닛의 설치에 비용이 발생할 뿐만 아니라 공정 과정에서 온조 유닛에 의한 웨이퍼의 온도 조정 과정을 거침으로 인하여 공정 시간이 길어지는 단점이 있다.However, the patented invention described above includes a separate temperature control unit, but there is a disadvantage in that installation of the temperature control unit is costly and process time is prolonged due to the process of adjusting the temperature of the wafer by the temperature control unit during the process.

대한민국 공개특허 제10-2011-0128766호Republic of Korea Patent Publication No. 10-2011-0128766

본 발명은 전술한 배경 기술의 문제점을 해결하기 위하여 안출된 것으로서, 본 발명이 해결하고자 하는 과제는 온조 유닛을 스핀 유닛이나 베이크 유닛과 인접하게 설치함으로써 효율적으로 포토리소그래피 공정이 가능하도록 구조가 개선된 포토리소그래피 장치용 처리 블록 및 이를 이용한 포토리소그래피 장치를 제공하는 것이다.The present invention has been made to solve the problems of the background art described above, and the problem to be solved by the present invention is to install a temperature control unit adjacent to a spin unit or a bake unit so that the structure is improved to enable an efficient photolithography process. A processing block for a photolithography device and a photolithography device using the processing block are provided.

전술한 과제의 해결 수단으로서 본 발명은,As a means of solving the above problems, the present invention,

한쪽은 캐리어 블록과 연결되어 캐리어 블록에서 웨이퍼를 이송받아 코팅 작업을 하고, 코팅 처리한 웨이퍼는 상기 캐리어 블록의 반대쪽에 연결된 인터페이스 블록을 거쳐 노광 블록으로 이송하여 노광 처리한 후 노광 처리된 웨이퍼를 다시 이송받아 현상 처리하며, 상하 방향으로 여러 개가 적층된 형태로 배치되는 포토리소그래피 장치용 처리 블록에 있어서,One side is connected to the carrier block to receive wafers from the carrier block for coating, and the coated wafer is transported to the exposure block via the interface block connected to the opposite side of the carrier block, exposed, and then exposed again. In the processing block for a photolithography device, which is transferred and developed, and is arranged in a stacked form in a vertical direction,

상기 캐리어 블록 측에 위치하여 캐리어 블록과의 사이에서 웨이퍼를 주고받을 때 임시 보관하는 제1버퍼 유닛;a first buffer unit located on the side of the carrier block and temporarily storing wafers when exchanging wafers with the carrier block;

상기 인터페이스 블록 측에 위치하여 노광 처리를 위하여 인터페이스 블록으로 웨이퍼를 이송할 때나 노광처리 후 인터페이스 블록에서 이송된 웨이퍼를 임시 보관하는 제2버퍼 유닛;a second buffer unit located on the side of the interface block to temporarily store the wafer transferred from the interface block when transferring the wafer to the interface block for exposure processing or after exposure processing;

상기 웨이퍼에 막을 형성하거나 웨이퍼를 현상하는 작업을 포함하는 작업을 수행하는 스핀 유닛;a spin unit performing an operation including forming a film on the wafer or developing the wafer;

상기 웨이퍼를 가열 또는 냉각하는 베이크 유닛;a bake unit that heats or cools the wafer;

상기 스핀 유닛 또는 베이크 유닛과 인접하게 설치되어 상기 웨이퍼의 온도를 조정하는 온조 유닛;a temperature control unit installed adjacent to the spin unit or the bake unit to adjust the temperature of the wafer;

상기 스핀 유닛과 베이크 유닛 사이에 설치되어 스핀 유닛과 베이크 유닛, 온조 유닛, 상기 제1버퍼 유닛 및 제2버퍼 유닛 사이에서 웨이퍼를 주고받기 위한 메인 전송로봇;a main transfer robot installed between the spin unit and the bake unit to transmit and receive wafers between the spin unit, the bake unit, the temperature control unit, and the first buffer unit and the second buffer unit;

상기 캐리어 블록 쪽에 설치되며 상하로 적층된 처리 블록 사이에서 웨이퍼를 주고 받기 위한 제1보조 전송로봇; 및,a first auxiliary transmission robot installed on the side of the carrier block and transmitting and receiving wafers between the vertically stacked processing blocks; and,

상기 인터페이스 블록 쪽에 설치되며 상하로 적층된 처리 블록 사이에서 웨이퍼를 주고받기 위한 제2보조 전송로봇; 을 포함하는 것을 특징으로 하는 포토리소그래피 장치용 처리 블록을 제공한다.a second auxiliary transfer robot installed on the side of the interface block and transmitting and receiving wafers between processing blocks stacked vertically; It provides a processing block for a photolithography apparatus comprising a.

상기 스핀 유닛은,The spin unit,

상기 웨이퍼에 레지트스막을 형성하기 위한 제1코팅 유닛,A first coating unit for forming a resist film on the wafer;

노광이 완료된 웨이퍼를 현상하기 위한 현상 유닛,a developing unit for developing the exposed wafer;

상기 웨이퍼에 반사 방지용 막을 형성하기 위한 제2코팅 유닛,A second coating unit for forming an antireflection film on the wafer;

중 적어도 하나를 포함하는 것이 바람직하다.It is preferable to include at least one of them.

상기 베이크 유닛, 제1코팅 유닛, 현상 유닛 및 제2코팅 유닛은 각각 여러 개의 단위 유닛으로 구성되어 여러 개의 단위 유닛 중 어느 하나 또는 둘 이상의 단위 유닛에서 선택적으로 처리 공정이 이루어질 수 있도록 하는 것이 좋다.It is preferable that the bake unit, the first coating unit, the developing unit, and the second coating unit each consist of a plurality of unit units so that a treatment process can be selectively performed in any one or two or more unit units among the plurality of unit units.

또한, 본 발명은 두 번째 형태로서 전술한 처리 블록을 포함하는 포토리소그래피 장치를 제공한다.In addition, the present invention provides a photolithography apparatus including the aforementioned processing block as a second aspect.

본 발명에 의하면 온조 유닛을 스핀 유닛이나 베이크 유닛과 인접하게 설치함으로써 효율적으로 포토리소그래피 공정이 가능하도록 구조가 개선된 포토리소그래피 장치용 처리 블록 및 이를 이용한 포토리소그래피 장치를 제공할 수 있다.According to the present invention, it is possible to provide a processing block for a photolithography device having an improved structure so as to efficiently perform a photolithography process by installing a temperature control unit adjacent to a spin unit or a bake unit, and a photolithography device using the same.

도 1 내지 도 3은 본 발명의 하나의 실시예에 따른 포토리소그래피 장치용 처리 블록 및 이를 이용한 포토리소그래피 장치를 설명하기 위한 도면.1 to 3 are views for explaining a processing block for a photolithography device and a photolithography device using the processing block according to one embodiment of the present invention.

이하에서는 도면을 참조하면서 본 발명의 바람직한 실시예에 대하여 설명함으로써 본 발명을 실시하기 위한 구체적인 내용을 제공하기로 한다.Hereinafter, specific details for carrying out the present invention will be provided by describing preferred embodiments of the present invention with reference to the drawings.

도 1 내지 도 3은 본 발명의 하나의 실시예에 따른 포토리소그래피 장치용 처리 블록 및 이를 이용한 포토리소그래피 장치를 설명하기 위한 도면이다.1 to 3 are views for explaining a processing block for a photolithography device and a photolithography device using the processing block according to one embodiment of the present invention.

우선 본 발명의 첫 번째 형태인 포토리소그래피 장치용 처리 블록의 하나의 실시예에 대해 설명하기로 한다.First, an embodiment of a processing block for a photolithography apparatus, which is a first aspect of the present invention, will be described.

본 실시예에 따른 포토리소그래피 장치용 처리 블록(P)은 캐리어 블록(C)과 연결되어 캐리어 블록(C)에서 웨이퍼를 이송받아 코팅 작업을 하고, 코팅 처리한 웨이퍼는 상기 캐리어 블록(C)의 반대쪽에 연결된 인터페이스 블록(I)을 거쳐 노광 블록(E)으로 이송하여 노광 처리한 후 노광 처리된 웨이퍼를 다시 이송받아 현상 처리하며, 상하 방향으로 여러 개가 적층된 형태로 배치된다. The processing block P for a photolithography apparatus according to the present embodiment is connected to the carrier block C, receives a wafer from the carrier block C, and performs a coating operation, and the coated wafer is transferred to the carrier block C. After being transferred to the exposure block (E) via the interface block (I) connected to the opposite side and exposed, the exposed wafer is transferred again and developed, and several wafers are stacked in the vertical direction.

상기 캐리어 블록(C)과 처리 블록(P) 사이와 처리 블록(P)과 인터페이스 블록(I) 사이의 웨이퍼의 이송은 도시 되지 않은 이송용 로봇에 의해 이루어진다.Transfer of wafers between the carrier block C and the processing block P and between the processing block P and the interface block I is performed by a transfer robot (not shown).

상기 처리 블록은, 도 1에 도시된 바와 같이, 제1버퍼 유닛(10), 제2버퍼 유닛(20), 스핀 유닛(30), 베이크 유닛(40), 온조 유닛(50), 메인이송 로봇(60), 제1보조이송 로봇(70), 제2보조이송 로봇(80)을 포함하여 구성된다.As shown in FIG. 1, the processing blocks include a first buffer unit 10, a second buffer unit 20, a spin unit 30, a bake unit 40, a temperature control unit 50, and a main transfer robot. (60), the first auxiliary transfer robot 70, and the second auxiliary transfer robot 80.

상기 제1버퍼 유닛(10)은 상기 캐리어 블록(C) 측에 마련되어 캐리어 블록(C)에서 처리 블록(P)으로 투입된 웨이퍼를 임시 보관하거나, 코팅, 노광, 현상 등의 처리가 완료된 웨이퍼를 캐리어 블록(C)으로 이송하는 등 캐리어 블록(C)과 처리 블록(P) 사이에서 웨이퍼를 주고받을 때나 상기 스핀 유닛(30)과 베이크 유닛(40) 사이에서 웨이퍼를 주고 받을 때 임시 보관한다.The first buffer unit 10 is provided on the side of the carrier block (C) to temporarily store wafers loaded from the carrier block (C) to the processing block (P), or to carrier wafers that have been processed such as coating, exposure, and development. It is temporarily stored when transferring wafers between the carrier block C and the processing block P, such as transferring them to block C, or when transferring wafers between the spin unit 30 and the bake unit 40.

상기 제2버퍼 유닛(20)은 중 상기 인터페이스 블록(I) 측에 마련되어 노광 처리를 위해 코팅 처리가 완료된 웨이퍼를 인터페이스 블록(I)에 전달하거나, 노광이 완료된 웨이퍼를 다시 처리 블록(P)으로 이송할 때와 같이 인터페이스 블록(I)과 웨이퍼를 주고받는 과정에서 임시보관하거나 상기 스핀 유닛(30)과 베이크 유닛(40) 사이에서 웨이퍼를 주고 받을 때 임시 보관한다.The second buffer unit 20 is provided on the side of the interface block (I) and transfers the coated wafer to the interface block (I) for exposure, or returns the exposed wafer to the processing block (P). As in the case of transfer, it is temporarily stored in the process of exchanging wafers with the interface block (I) or temporarily stored in the process of exchanging wafers between the spin unit 30 and the bake unit 40.

상기 스핀 유닛(30)과 베이크 유닛(40) 사이에서 웨이퍼를 주고받을 때 상기 제1버퍼 유닛(10)이나 제2버퍼 유닛(20)을 선택적으로 사용할 수 있는데 어떤 버퍼 유닛을 사용할지는 공정상의 편의에 의해 결정한다.When wafers are exchanged between the spin unit 30 and the bake unit 40, the first buffer unit 10 or the second buffer unit 20 can be selectively used. Which buffer unit to use is convenient for the process. determined by

상기 스핀 유닛(30)은 웨이퍼를 코팅하는 코팅 공정이나 웨이퍼를 현상하는 현상 공정을 처리하기 위한 유닛으로서, 웨이퍼에 레지스트막을 형성하기 위한 제1코팅 유닛, 노광이 완료된 웨이퍼를 현상하기 위한 현상 유닛, 상기 웨이퍼에 반사 방지용 막을 형성하기 위한 제2코팅 유닛 중 적어도 하나를 포함하여 구성될 수 있다. 이때 상기 스핀 유닛(30)이 수행하는 것으로 기술된 코팅 공정이나 현상 공정은 예시이며 스핀 유닛(30)이 수행하는 공정으로서 웨이퍼의 세척 공정, 소수화 처리 공정, 주변 노광 공정, 웨이퍼의 표면을 검사하기 위한 공정 등 다양한 공정이 포함될 수 있다.The spin unit 30 is a unit for processing a coating process for coating a wafer or a development process for developing a wafer, and includes a first coating unit for forming a resist film on a wafer, a developing unit for developing an exposed wafer, It may be configured to include at least one of second coating units for forming an antireflection film on the wafer. At this time, the coating process or development process described as being performed by the spin unit 30 is an example, and processes performed by the spin unit 30 include a wafer cleaning process, a hydrophobic treatment process, a peripheral exposure process, and a wafer surface inspection. Various processes may be included, such as a process for

한편, 상기 스핀 유닛(30)은 여러 개의 단위 유닛(30a)을 포함하고 있어서 동시에 여러 개의 웨이퍼에 코팅이나 현상 공정을 수행할 수 있도록 구성되어 공정 효율을 높일 수 있도록 구성된다.Meanwhile, the spin unit 30 includes a plurality of unit units 30a and is configured to simultaneously perform a coating or developing process on several wafers, thereby increasing process efficiency.

상기 베이크 유닛(40)은 웨이퍼를 가열 또는 냉각하는 기능을 수행하는 구성으로서 가열 유닛과 냉각 유닛을 포함하여 구성된다. The bake unit 40 serves to heat or cool a wafer and includes a heating unit and a cooling unit.

상기 베이크 유닛(40) 상기 스핀 유닛(30)과 마찬가지로 여러 개의 단위 유닛(41a, 42a)을 포함하고 있어서, 동시에 여러 개의 웨이퍼를 가열 또는 냉각할 수 있도록 구성되어 있다. 도면에 41a로 표시된 구성은 가열 단위 유닛이고, 42a로 표시된 구성은 냉각 단위 유닛이다.Like the spin unit 30, the bake unit 40 includes a plurality of unit units 41a and 42a, so that several wafers can be heated or cooled at the same time. The configuration indicated by 41a in the drawing is a heating unit, and the configuration indicated by 42a is a cooling unit.

상기 온조 유닛(50)은 웨이퍼에 코팅막을 형성하기 위한 공정액의 도포를 하기에 최적의 온도가 되도록 웨이퍼의 온도를 조정하는 구성이다.The temperature control unit 50 is configured to adjust the temperature of the wafer so as to be the optimum temperature for coating a process solution for forming a coating film on the wafer.

상기 온조 유닛(50)은 상기 스핀 유닛(30) 또는 베이크 유닛(40)과 인접하게 설치되는데, 도 1에 도시된 바와 같이 온조 유닛(50)이 스핏 유닛(30)과 베이크 유닛(40) 각각에 인접하게 두 개가 설치될 수 있고, 도 2나 도 3에 도시된 바와 같이 두 개의 온조 유닛(50) 모두가 스핏 유닛(30)이나 베이크 유닛(40)에 인접하게 설치될 수도 있다.The temperature control unit 50 is installed adjacent to the spin unit 30 or the bake unit 40. As shown in FIG. 1, the temperature control unit 50 is connected to the spit unit 30 and the bake unit 40, respectively. Two may be installed adjacent to , and both of the two temperature control units 50 may be installed adjacent to the spit unit 30 or the bake unit 40 as shown in FIG. 2 or FIG. 3 .

상기 메인이송 로봇(60)은 상기 공정유닛(30)과 베이크 유닛(40) 사이에 설치되어 제1버퍼 유닛(10), 제2버퍼 유닛(20), 스핀 유닛(30), 베이크 유닛(40) 및 온조 유닛(50) 사이에서 웨이퍼를 주고받는 기능을 수행한다.The main transfer robot 60 is installed between the process unit 30 and the bake unit 40, and includes the first buffer unit 10, the second buffer unit 20, the spin unit 30, and the bake unit 40. ) and the temperature control unit 50 to exchange wafers.

상기 제1보조이송 로봇(70)은 상기 캐리어 블록(C) 쪽에 설치되며 상하로 적층된 처리 블록들 사이에서 웨이퍼를 주고받기 위한 로봇이다. The first auxiliary transfer robot 70 is installed on the side of the carrier block C and is a robot for exchanging wafers between processing blocks stacked up and down.

상기 제2보조이송 로봇(80)은 상기 인터페이스 블록(I) 쪽에 설치되며, 상기 제1보조이송 로봇(70)과 마찬가지로 상하로 적층된 처리 블록들 사이에서 웨이퍼를 주고 받기 위한 로봇이다.The second auxiliary transfer robot 80 is installed on the side of the interface block (I), and like the first auxiliary transfer robot 70 is a robot for exchanging wafers between processing blocks stacked up and down.

종래기술에서는 온조 유닛이 버퍼 유닛에 설치되어 사용되었다. 웨이퍼를 스핀 유닛에 투입하기 전에 온조 유닛에서 웨이퍼의 온도를 조정해야 하는데, 베이크 유닛에서 버퍼 유닛에 설치된 온조 유닛으로 웨이퍼를 이송하여 버펏 유닛에 설치된 온조 유닛에서 온도 조정 공정을 실시한 후 다시 스핀 유닛으로 이송해야 하므로 이송 작업의 스텝 수가 많아지고 이송 거리가 늘어남에 따라 공정의 완료에 필요한 시간이 늘어나는 등의 문제가 발생한다. In the prior art, a temperature control unit is installed and used in a buffer unit. Before putting the wafer into the spin unit, the temperature of the wafer must be adjusted in the temperature control unit. The wafer is transferred from the bake unit to the temperature control unit installed in the buffer unit, and the temperature adjustment process is performed in the temperature control unit installed in the buffer unit, and then returned to the spin unit. As the number of steps in the transfer operation increases and the transfer distance increases, problems such as an increase in the time required to complete the process occur.

본 실시예에서는 온조 유닛(50)을 스핀 유닛(30) 또는 베이크 유닛(40)과 인접한 위치에 설치함으로써 베이크 유닛(40) 중 어느 하나의 단위 유닛(41a. 42a)에서 가열 또는 냉각한 온조 유닛(50)으로 이송하여 웨이퍼의 온도를 조정한 후 온도가 조정된 웨이퍼를 인접한 스핀 유닛(30)의 단위 유닛(30a)중 하나로 이송하여 코팅이나 현상 등의 처리가 이루어질 수 있도록 함으로써 이송 작업의 스텝 수를 줄이고 이송 거리를 줄임으로써 생산 공정의 최적화가 가능하다. In this embodiment, by installing the temperature control unit 50 at a position adjacent to the spin unit 30 or the bake unit 40, one of the unit units 41a or 42a of the bake unit 40 heats or cools the heat control unit. (50) to adjust the temperature of the wafer, and then transfer the temperature-adjusted wafer to one of the unit units 30a of the adjacent spin unit 30 so that it can be processed such as coating or developing. Optimization of the production process is possible by reducing the number and reducing the transport distance.

또한, 온조 유닛(50)이 스핀 유닛(30)이나 베이크 유닛(40)과 인접하게 설치되어 있는데 버퍼 유닛(10,20)에 비해서는 유닛 간의 이송거리가 줄어들게 되어 이송 중 발생 가능한 웨이퍼의 온도 변화를 줄여서 더욱 정밀한 공정 수행이 가능해지는 장점도 기대할 수 있다.In addition, since the temperature control unit 50 is installed adjacent to the spin unit 30 or the bake unit 40, the transfer distance between the units is reduced compared to the buffer units 10 and 20, and thus the temperature change of the wafer that may occur during transfer. It is also possible to expect the advantage of being able to perform a more precise process by reducing .

이하에서는 본 발명의 두 번째 형태인 포토리소그래피 장치에 대해 설명하기로 한다. Hereinafter, a second type of photolithography device of the present invention will be described.

본 발명에 따른 포토리소그래피 장치는 본 발명의 첫 번째 형태에 따른 처리 블록(P)과 함께 캐리어 블록(C), 인터페이스 블록(I), 노광 블록(E) 등의 구성을 포함하고 있으며, 각 블록 사이에서 웨이퍼를 이송하기 위한 이송 로봇(미도시)도 포함하여 구성된다. The photolithography apparatus according to the present invention includes components such as a carrier block (C), an interface block (I), and an exposure block (E) together with the processing block (P) according to the first aspect of the present invention, each block It is also configured to include a transfer robot (not shown) for transferring wafers between them.

본 발명의 포토리소그래피 장치의 특징은 처리 블록(P)에 있으며 이에 관한 설명은 앞서 충분히 이루어졌고, 나머지 구성은 종래기술을 사용할 수 있으므로 포토리소그래피 장치에 대한 추가적인 설명은 생략하기로 한다.The feature of the photolithography apparatus of the present invention is in the processing block P, which has been sufficiently described above, and since the other configurations may use the prior art, additional description of the photolithography apparatus will be omitted.

이상에서 본 발명의 바람직한 실시예에 대하여 설명함으로써 본 발명의 실시를 위한 구체적인 내용을 제공하였으나, 본 발명의 기술적 사상이 설명된 실시예에 한정되는 것은 아니며 본 발명의 기술적 사상을 벗어나지 않는 범위 안에서 다양한 형태의 포토리소그래피 장치용 처리 블록 및 이를 이용한 포토리소그래피 장치로 구체화될 수 있다.Although specific details for the implementation of the present invention have been provided by describing preferred embodiments of the present invention above, the technical spirit of the present invention is not limited to the described embodiments, and various It can be embodied as a processing block for a photolithography device of the form and a photolithography device using the same.

10 : 제1버퍼 유닛 20 : 제2버퍼 유닛
30 : 스핀 유닛 40 : 베이크 유닛
50 : 온조 유닛 60 : 메인이송 로봇
70 : 제1보조이송 로봇 80 : 제2보조이송 로봇10: first buffer unit 20: second buffer unit
30: spin unit 40: bake unit
50: temperature control unit 60: main transfer robot
70: first auxiliary transfer robot 80: second auxiliary transfer robot

Claims (6)

한쪽은 캐리어 블록과 연결되어 캐리어 블록에서 웨이퍼를 이송받아 코팅 작업을 하고, 코팅 처리한 웨이퍼는 상기 캐리어 블록의 반대쪽에 연결된 인터페이스 블록을 거쳐 노광 블록으로 이송하여 노광 처리한 후 노광 처리된 웨이퍼를 다시 이송받아 현상 처리하며, 상하 방향으로 여러 개가 적층된 형태로 배치되는 포토리소그래피 장치용 처리 블록에 있어서,
상기 캐리어 블록 측에 위치하여 캐리어 블록과의 사이에서 웨이퍼를 주고받을 때 임시 보관하는 제1버퍼 유닛;
상기 인터페이스 블록 측에 위치하여 노광 처리를 위하여 인터페이스 블록으로 웨이퍼를 이송할 때나 노광처리 후 인터페이스 블록에서 이송된 웨이퍼를 임시 보관하는 제2버퍼 유닛;
상기 웨이퍼에 막을 형성하거나 웨이퍼를 현상하는 작업을 포함하는 작업을 수행하는 스핀 유닛;
상기 웨이퍼를 가열 또는 냉각하는 베이크 유닛;
상기 스핀 유닛 또는 베이크 유닛과 인접하게 설치되어 상기 웨이퍼의 온도를 조정하는 온조 유닛;
상기 스핀 유닛과 베이크 유닛 사이에 설치되어 스핀 유닛과 베이크 유닛, 온조 유닛, 상기 제1버퍼 유닛 및 제2버퍼 유닛 사이에서 웨이퍼를 주고받기 위한 메인 전송로봇;
상기 캐리어 블록 쪽에 설치되며 상하로 적층된 처리 블록 사이에서 웨이퍼를 주고 받기 위한 제1보조 전송로봇; 및,
상기 인터페이스 블록 쪽에 설치되며 상하로 적층된 처리 블록 사이에서 웨이퍼를 주고받기 위한 제2보조 전송로봇; 을 포함하는 것을 특징으로 하는 포토리소그래피 장치용 처리 블록.
One side is connected to the carrier block to receive wafers from the carrier block for coating, and the coated wafer is transported to the exposure block via the interface block connected to the opposite side of the carrier block, exposed, and then exposed again. In the processing block for a photolithography device, which is transferred and developed, and is arranged in a stacked form in a vertical direction,
a first buffer unit located on the side of the carrier block and temporarily storing wafers when exchanging wafers with the carrier block;
a second buffer unit located on the side of the interface block to temporarily store the wafer transferred from the interface block when transferring the wafer to the interface block for exposure processing or after exposure processing;
a spin unit performing an operation including forming a film on the wafer or developing the wafer;
a bake unit that heats or cools the wafer;
a temperature control unit installed adjacent to the spin unit or the bake unit to adjust the temperature of the wafer;
a main transfer robot installed between the spin unit and the bake unit to transmit and receive wafers between the spin unit, the bake unit, the temperature control unit, and the first buffer unit and the second buffer unit;
a first auxiliary transmission robot installed on the side of the carrier block and transmitting and receiving wafers between the vertically stacked processing blocks; and,
a second auxiliary transfer robot installed on the side of the interface block and transmitting and receiving wafers between processing blocks stacked vertically; A processing block for a photolithography apparatus comprising a.
 제1항에 있어서,
상기 스핀 유닛은,
상기 웨이퍼에 레지트스막을 형성하기 위한 제1코팅 유닛,
노광이 완료된 웨이퍼를 현상하기 위한 현상 유닛,
상기 웨이퍼에 반사 방지용 막을 형성하기 위한 제2코팅 유닛,
중 적어도 하나를 포함하는 것을 특징으로 하는 포토리소그래피 장치용 처리 블록.
According to claim 1,
The spin unit,
A first coating unit for forming a resist film on the wafer;
a developing unit for developing the exposed wafer;
A second coating unit for forming an antireflection film on the wafer;
A processing block for a photolithography device comprising at least one of the following.
 제2항에 있어서,
상기 베이크 유닛, 제1코팅 유닛, 현상 유닛 및 제2코팅 유닛은 각각 여러 개의 단위 유닛으로 구성되어 여러 개의 단위 유닛 중 어느 하나 또는 둘 이상의 단위 유닛에서 선택적으로 처리 공정이 이루어질 수 있는 것을 특징으로 하는 포토리소그래피 장치용 처리 블록.
According to claim 2,
The bake unit, the first coating unit, the developing unit, and the second coating unit are each composed of several unit units, so that a treatment process can be selectively performed in any one or two or more unit units among the plurality of unit units. Characterized in that A processing block for a photolithography device.
 청구항 제1항에 포함된 처리 블록을 포함하는 포토리소그래피 장치.
A photolithography apparatus comprising the processing block included in claim 1 .
 제4항에 있어서,
상기 스핀 유닛은,
상기 웨이퍼에 레지트스막을 형성하기 위한 제1코팅 유닛,
노광이 완료된 웨이퍼를 현상하기 위한 현상 유닛,
상기 웨이퍼에 반사 방지용 막을 형성하기 위한 제2코팅 유닛,
중 적어도 하나를 포함하는 것을 특징으로 하는 포토리소그래피 장치.
According to claim 4,
The spin unit,
A first coating unit for forming a resist film on the wafer;
a developing unit for developing the exposed wafer;
A second coating unit for forming an antireflection film on the wafer;
A photolithography device comprising at least one of
 제4항에 있어서,
상기 베이크 유닛, 제1코팅 유닛, 현상 유닛 및 제2코팅 유닛은 각각 여러 개의 단위 유닛으로 구성되어 여러 개의 단위 유닛 중 어느 하나 또는 둘 이상의 단위 유닛에서 선택적으로 처리 공정이 이루어질 수 있는 것을 특징으로 하는 포토리소그래피 장치.According to claim 4,
The bake unit, the first coating unit, the developing unit, and the second coating unit are each composed of several unit units, so that a treatment process can be selectively performed in any one or two or more unit units among the plurality of unit units. Characterized in that Photolithography device.
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