KR20120077880A - Substrate processing method for photolithography process - Google Patents

Substrate processing method for photolithography process Download PDF

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Publication number
KR20120077880A
KR20120077880A KR1020100139997A KR20100139997A KR20120077880A KR 20120077880 A KR20120077880 A KR 20120077880A KR 1020100139997 A KR1020100139997 A KR 1020100139997A KR 20100139997 A KR20100139997 A KR 20100139997A KR 20120077880 A KR20120077880 A KR 20120077880A
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KR
South Korea
Prior art keywords
bake
substrates
modules
temperature
module
Prior art date
Application number
KR1020100139997A
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Korean (ko)
Inventor
강동연
고재승
Original Assignee
세메스 주식회사
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Priority to KR1020100139997A priority Critical patent/KR20120077880A/en
Publication of KR20120077880A publication Critical patent/KR20120077880A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: A substrate processing method for a photolithographic process is provided to efficiently manage the continuous processing of substrates by minimizing environmental temperature set-up time for a bake. CONSTITUTION: Bake temperature is identified through a process recipe of preceding substrates and following substrates. The temperature of a bake module(220) is set for each preceding substrates and following substrates if the bake temperature of the preceding substrates and the following substrates is different. Bake modules are divided into a bake module(220a) in a first group baking the preceding substrates and a bake module(220b) in a second group baking the following substrates and set to be the bake temperature of each corresponding process recipe in a temperature set-up step.

Description

Substrate processing method for photolithography process {SUBSTRATE PROCESSING METHOD FOR PHOTOLITHOGRAPHY PROCESS}

TECHNICAL FIELD The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a substrate processing method for a photolithography process having a coating process and a developing process in a semiconductor manufacturing process.

As is well known, an apparatus for performing a photolithography process includes a coating chamber for applying a resist to a wafer, a developing module for performing a developing process on an exposed wafer, and a processing module having an interface for inline connection with the exposure apparatus. Has Recently, however, in addition to the processes described above, a greater number of processes are required before and after exposure.

In the photolithography process, it can be seen that there are a plurality of steps of heating the process wafer such as soft bake, post-exposure bake, and hard bake. These bake stages take place in the bake modules, with each baking module being somewhat different in operating temperature. The operating temperature of each bake module is determined at the beginning of the process line conditioning phase and operated with the value entered in the main controller. When necessary, the heating signal is supplied to the differentiated temperature controller from the main controller. The controller maintains a constant temperature by flowing a certain amount of current to the heater of the baking module.

In the photolithography apparatus having such a configuration, the substrate is processed based on a process recipe in which a work order is set. The baking temperature of the process recipe of the preceding job substrates and the process recipe of the subsequent job substrates are different from each other. In this case, it was possible to adjust the temperature of the bake module or to insert a trailing job board. This causes uptime losses for the bake module's temperature readjustment time.

It is an object of the present invention to provide a substrate processing method in a spinner apparatus capable of more efficiently operating a continuous process according to a temperature change of a baking process.

It is an object of the present invention to provide a substrate processing method in spinner equipment for minimizing process problems occurring while waiting in a previous step unit during a change in bake temperature.

The objects of the present invention are not limited thereto, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

In order to solve the above problems, the substrate processing method for the photolithography process according to the present invention comprises the steps of checking the baking temperature through the process recipe of the preceding substrates and the following substrates; If the baking temperature of the preceding substrates and the subsequent substrates are different, setting the temperature of the baking modules for each of the preceding substrates and the subsequent substrates.

According to an embodiment of the present disclosure, in the temperature setting step, the bake modules may be divided into a first group of bake modules for baking the preceding substrates and a second group of bake modules for baking the subsequent substrates. It is set to the baking temperature of the process recipe.

According to the present invention, it has a special effect that can efficiently operate the continuous progress of the substrates by minimizing the environmental temperature setting time of the baking.

According to the present invention, it is easy to determine the input of the following job substrates in the continuous progress of the substrates of the preceding job and the substrates of the following job.

According to the present invention, when the temperature setting of the preceding job and the following job is different, the baking can be separately operated, and thus, the substrate can be continuously added during the temperature setting time.

1 is a view showing a conveyor apparatus according to the present invention.
1 is a perspective view of a photolithography facility used in a substrate processing method according to an embodiment of the present invention.
2 is a view showing a coating treatment unit in the installation of FIG.
3 is a view illustrating a developing unit in the installation of FIG. 1.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention. The problem, the problem solving means, and effects to be solved by the present invention described above will be easily understood through embodiments related to the accompanying drawings. Each drawing is partly or exaggerated for clarity. In adding reference numerals to the components of each drawing, it should be noted that the same components are shown with the same reference numerals as much as possible, even if displayed on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

Figure 1 Figure 3 is a diagram schematically showing a photolithography facility 1 according to an embodiment of the present invention.

1 is a perspective view of a photolithography installation 1, FIG. 2 is a view showing a coating treatment in the installation 1 of FIG. 1, and FIG. 3 is a view showing a developing treatment in the installation 1 in FIG. 1.

The substrate processing apparatus 1 includes an index unit 100, a process processing unit 200, an interface unit 700, and an exposure apparatus 900. The index unit 100, the process processor 500, the interface unit 700, and the exposure apparatus 900 are sequentially arranged in one direction.

The wafer W is moved in the state accommodated in the container 20. At this time, the container 20 has a structure that can be sealed from the outside. For example, as the container 20, a front open unified pod (FOUP) having a door in front may be used. Hereinafter, each configuration will be described in detail with reference to FIGS. 1 to 4.

(Index part)

The index unit 100 includes a plurality of load ports 110, an index robot 120, and a first buffer module 140.

The load port 110 has a mounting table 112 on which a container 20 containing wafers W is placed. The mounting table 112 is provided in plurality, and the mounting tables 112 are arranged in a line along the second direction 14. In FIG. 1 four mounting blocks 112 are provided.

The index robot 120 transfers the wafer W between the container 20 placed on the mounting table 112 of the load port 110 and the first buffer module 140. The index robot 120 drives four axes so that the hand 122 that directly handles the wafer W can be moved and rotated in the first direction 12, the second direction 14, and the third direction 16. This has a possible structure. The guide rail 130 is provided such that its longitudinal direction is disposed along the second direction 14. The index robot 120 is coupled to the guide rail 130 to be linearly moved along the guide rail 130. Although not shown,

The first buffer module 140 is provided in the shape of an empty rectangular parallelepiped capable of temporarily storing the plurality of wafers W, and is disposed between the index robot 120 and the process processor 200.

(Process Processing Unit)

In the processing unit 200, a coating processing unit 200a which performs a process of applying photoresist on the wafer W before the exposure process, and a developing unit 200b which performs a process of developing the wafer W after the exposure process. It includes.

The coating processing unit 200a and the developing processing unit 200b are disposed so as to be partitioned between each other in layers. According to an example, the coating processing unit 200a is positioned above the developing processing unit 200b.

The coating processing unit 200a includes a process of applying a photoresist such as a photoresist to the wafer W, and a heat treatment process such as heating and cooling of the wafer W before and after the resist application process. The coating treatment unit has an application module 210, bake modules 220, cooling modules 250, and a transfer chamber 290.

The application module 210, the bake module 220, the cooling module 250 and the transfer chamber 290 are sequentially arranged along the second direction 14. Therefore, the application module 210 is positioned to face the bake module 220 and the cooling module 250 with the transfer chamber 290 interposed therebetween. A plurality of application modules 210 may be provided, and a plurality of application modules 210 may be provided in the first direction 12 and the third direction 16, respectively. In the figure an example is provided in which three application chambers 210 are provided. The bake modules 220 are divided into two groups that are set at different temperatures. In the present exemplary embodiment, an example in which five baking modules 220a of the first group and five baking modules 220b of the second group are stacked is illustrated. Alternatively, the bake module 220 may be provided in larger numbers. The reason why the bake modules are divided into two groups in the present invention is to enable substrate loading for different bake temperature conditions. That is, even if the baking temperature (eg 110 ° C.) of the process recipe of the preceding job substrates is different from the baking temperature (eg 100 ° C.) of the process recipe of the subsequent job substrates, the temperature of the bake module is readjusted. A trailing job substrate can be added immediately without going through.

The transfer chamber 290 is positioned side by side in the first direction 12 with the first buffer module 140. An application part robot 292 and a guide rail 294 are positioned in the transfer chamber 290. The transfer chamber 290 has a generally rectangular shape. The applicator robot 292 transfers the wafer W between the bake module 220, the applicator module 210, and the cooling module 240 and the first buffer module 140. The guide rail 294 is disposed so that its longitudinal direction is parallel to the first direction 12. The guide rail 294 guides the applicator robot 292 to move linearly in the first direction 12.

The application modules 210 all have the same structure. However, the types of photoresists used in each coating module 410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The application module 410 applies a photo resist on the wafer W.

The bake modules 220 heat-treat the wafer (W). For example, the bake modules 220 preheat the wafer W to a predetermined temperature before applying the photoresist to remove organic matter or moisture on the surface of the wafer W or to process the photoresist. A soft bake process or the like performed after coating on the wafer), and a cooling step of cooling the wafer W after each heating step is performed.

The developing unit 200b may include a developing process of removing a part of the photoresist by supplying a developing solution to obtain a pattern on the wafer W, and a heat treatment process such as heating and cooling performed on the wafer W before and after the developing process. It includes.

The developing unit 200b includes the developing modules 310, the bake modules 320, the cooling modules 340, and the transfer chamber 390.

The developing modules 310, the bake modules 320, the cooling modules 340, and the transfer chamber 390 are sequentially disposed along the second direction 14. Therefore, the developing module 460 is positioned to face the bake module 470 and the cooling module with the transfer chamber 390 interposed therebetween. A plurality of developing modules 310 may be provided, and a plurality of developing modules 310 may be provided in the first direction 12 and the third direction 16, respectively. In the drawing, an example in which three developing modules 310 are provided is shown.

The bake modules 320 are divided into two groups that are set to different temperatures. In the present exemplary embodiment, an example in which five baking modules 320a of the first group and five baking modules 320b of the second group are stacked is illustrated. Alternatively, the bake module 320 may be provided in larger numbers. The reason why the bake modules are divided into two groups in the present invention is to enable substrate loading for different bake temperature conditions. That is, even if the baking temperature (for example, 110 ° C) of the process recipe of the preceding job substrates is different from the baking temperature (for example, 100 ° C) of the process recipe of the subsequent job substrates, the temperature of the bake module is readjusted. A trailing job substrate can be added immediately without going through.

The transfer chamber 390 is positioned side by side in the first direction 12 with the first buffer module 140. The developing unit robot 392 and the guide rail 394 are positioned in the transfer chamber 390. The transfer chamber 390 has a generally rectangular shape. The developing unit robot 392 transfers the wafer W between the bake module 320, the developing module 310, and the cooling module 340 and the first buffer module 140. The guide rail 394 is disposed such that its longitudinal direction is parallel to the first direction 12. The guide rail 394 guides the developing unit robot 392 to move linearly in the first direction 12.

The developing modules 310 all have the same structure. However, the types of the developer used in each of the developing modules 310 may be different from each other. The developing module 310 removes a region to which light is irradiated from the photoresist on the wafer (W). At this time, the area irradiated with light in the protective film is also removed. Depending on the kind of photoresist that is optionally used, only the regions of the photoresist and the protective film to which light is not irradiated may be removed.

The bake module 320 heat-processes the wafer (W). For example, the bake modules 320 are heated after each bake process and a hard bake process that heats the wafer W after the post-baking process that heats the wafer W before the developing process is performed, and after the developing process is performed. And a cooling process for cooling the finished substrate.

As described above, the bake modules in the coating and developing processes provide the first group of bake modules 220a and 320a and the second group of bake modules 220b and 320b which are set at different temperatures, and the substrates are processed. Heated in a bake module installed for the baking temperature of the recipe.

(Interface part)

The interface unit 700 transfers the wafer W between the process processor 200 and the exposure apparatus 900. The interface unit has a second buffer module 720 and an interface robot 740. The interface robot 740 carries the wafer W between the second buffer module 720 and the exposure apparatus 900.

In the photolithography apparatus 1 having the above-described configuration, the baking temperature of the process recipe (hard bake step) of the substrates of the preceding job is 100 ° C, and the baking temperature of the process recipe (hard bake step) of the substrates of the subsequent job is 100 ° C. Has a different use temperature of 110 ° C., the first group of bake modules 320a are set to the baking temperature of the process recipe of the substrates of the preceding job, and the second group of bake modules 320b are the process of the substrates of the subsequent job. It is set to the baking temperature of the recipe. Therefore, it is possible to continuously input the trailing job substrate when the pre / following job substrates continuously proceed. Here, a job refers to a lot unit, which is a bundle of 25 substrates stored in a cassette.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

Description of the Related Art
100: index portion
200: process processing unit
700: interface unit
900 exposure apparatus

Claims (2)

In a substrate processing method for a photolithography process having an application process and a development process:
Confirming the bake temperature through the process recipe of the preceding and following substrates;
If the baking temperatures of the preceding substrates and the subsequent substrates are different, setting the temperature of the baking modules for each of the preceding substrates and the trailing substrates. The method of claim 1,
In the temperature setting step, the bake modules are divided into a first group of bake modules for baking the preceding substrates and a second group of bake modules for baking the subsequent substrates to set the bake temperatures of the corresponding process recipes. A substrate processing method for a photolithography process, characterized in that.
KR1020100139997A 2010-12-31 2010-12-31 Substrate processing method for photolithography process KR20120077880A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101412641B1 (en) * 2012-10-31 2014-06-30 세메스 주식회사 unit for handling a substrate, apparatus for treating substrates, and unit for supporting a substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101412641B1 (en) * 2012-10-31 2014-06-30 세메스 주식회사 unit for handling a substrate, apparatus for treating substrates, and unit for supporting a substrate

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