JP2007035706A - Conveyance apparatus, exposure device, and method of manufacturing micro device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a conveyance apparatus which can prevent the generation of difference in line width of an exposure pattern or the like due to different exposure elapsed time. <P>SOLUTION: The conveyance apparatus 2 to convey an exposed substrate P includes moving means 8a, 22 and 24 for moving the substrate P while the substrate P is being placed thereon, and a temperature control means for controlling the temperature of the exposed substrate P. The temperature control means controls temperature for each of areas of the substrate P according to the exposure elapsed time. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a transport apparatus that transports a substrate to an exposure apparatus for performing exposure for manufacturing a flat panel display element such as a liquid crystal display element, an exposure apparatus including the transport apparatus, and a micro that uses the exposure apparatus. The present invention relates to a device manufacturing method.

  Currently, in the production of flat panel display elements such as liquid crystal display elements, a photolithography technique is used to transfer a fine pattern formed on a mask onto a substrate. In a manufacturing process using this photolithography technique, an original image pattern formed on a mask placed on a mask stage that moves two-dimensionally is placed on a substrate stage that moves two-dimensionally via a projection optical system. A projection exposure apparatus that performs projection exposure on a substrate coated with a photosensitive agent such as a photoresist is used (for example, see Patent Document 1).

  In recent years, a chemically amplified resist is used as a photoresist applied on a substrate. In the substrate coated with the chemically amplified resist, the chemical reaction of the chemically amplified resist starts by exposure, and the chemical reaction proceeds even after the exposure. The progress of the chemical reaction of the chemically amplified resist can be promoted by applying predetermined heat. Therefore, in the exposure of the substrate coated with the chemically amplified resist, the substrate temperature is controlled by placing the exposed substrate on a hot plate or the like in order to accelerate the exposure.

JP-A-5-166701

  By the way, with the recent increase in size of the substrate, the region on the substrate is divided into a plurality of regions, and sequential exposure is performed for each region. Therefore, the difference between the exposure start time of the first exposure area and the exposure start time of the last exposure area is large.

  Here, when a pattern is sequentially exposed to a plurality of exposed areas on a substrate coated with a chemically amplified resist, the progress of the chemical reaction of the chemically amplified resist differs between the first exposed area and the last exposed area. Occurs. In particular, as the time required for exposure of a single substrate increases with the increase in size of the substrate, the difference in this chemical reaction becomes more prominent, and an error occurs in the line width of the exposure pattern in each exposure region. A problem occurs.

  An object of the present invention is to provide a transport apparatus capable of preventing an error in the line width of an exposure pattern due to a difference in elapsed exposure time, an exposure apparatus provided with the transport apparatus, and a microdevice using the exposure apparatus It is to provide a manufacturing method.

  The transport apparatus according to the present invention comprises, in a transport apparatus for transporting an exposed substrate, a moving means for moving the substrate in a mounted state, and a temperature management means for controlling the temperature of the exposed substrate, The temperature management means performs temperature management for each region of the substrate based on the elapsed exposure time.

  According to the transfer device of the present invention, by performing temperature control for each exposure region on the substrate based on the exposure elapsed time, a line of a predetermined pattern exposed to each exposure region on the substrate due to a difference in exposure elapsed time It is possible to prevent an error from occurring in the width or the like.

  The exposure apparatus according to the present invention further comprises temperature management means for performing temperature management of the exposed substrate in the exposure apparatus that exposes a predetermined pattern to the substrate coated with a resist. The temperature management is performed for each region of the substrate based on the elapsed exposure time.

  According to the exposure apparatus of the present invention, by performing temperature control for each exposure region on the substrate based on the exposure elapsed time, a line of a predetermined pattern exposed to each exposure region on the substrate due to a difference in exposure elapsed time It is possible to prevent an error from occurring in the width or the like. Therefore, a predetermined pattern can be accurately exposed in each exposure region on the substrate.

  The microdevice manufacturing method of the present invention includes an exposure step of exposing a predetermined pattern on a photosensitive substrate using the exposure apparatus of the present invention, and a development of developing the photosensitive substrate exposed by the exposure step. And a process.

  According to the microdevice manufacturing method of the present invention, since exposure is performed using an exposure apparatus that performs temperature management for each exposure region on the photosensitive substrate based on the elapsed exposure time, a predetermined pattern is accurately formed on the photosensitive substrate. It can be well exposed and a good microdevice can be obtained.

  According to the transfer device of the present invention, by performing temperature control for each exposure region on the substrate based on the exposure elapsed time, a line of a predetermined pattern exposed to each exposure region on the substrate due to a difference in exposure elapsed time It is possible to prevent an error from occurring in the width or the like.

  Further, according to the exposure apparatus of the present invention, by performing temperature control for each exposure region on the substrate based on the exposure elapsed time, the line width of the predetermined pattern exposed on the substrate due to the difference in exposure elapsed time, etc. It is possible to prevent an error from occurring. Therefore, a predetermined pattern can be accurately exposed on the substrate.

  Further, according to the microdevice manufacturing method of the present invention, since exposure is performed using an exposure apparatus that performs temperature management for each exposure region on the photosensitive substrate based on the elapsed exposure time, a predetermined pattern is formed on the photosensitive substrate. Can be accurately exposed, and a good microdevice can be obtained.

  Since the transport apparatus and the exposure apparatus of the present invention can prevent the occurrence of errors such as the line width of the pattern exposed for each exposure region by the temperature control means, the outer diameter is particularly large like a substrate for a flat panel display. Is effective for substrates larger than 500 mm.

  An exposure apparatus according to the first embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a view showing the schematic arrangement of an exposure apparatus according to the first embodiment. In the following description, the XYZ orthogonal coordinate system shown in FIG. 1 is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The XYZ orthogonal coordinate system is set so that the X axis and the Y axis are parallel to the plate P, and the Z axis is set in a direction orthogonal to the plate P.

  As shown in FIG. 1, the exposure apparatus includes an illumination optical apparatus IL including a light source and an illumination optical system. The light beam emitted from the illumination optical device IL illuminates the mask M on which a predetermined pattern is formed in a superimposed manner. The light transmitted through the pattern of the mask M forms a pattern image of the mask M on the plate P which is a photosensitive substrate for a flat panel display, for example, via the projection optical system PL. The outer diameter of the plate P is larger than 500 mm, and the outer diameter indicates one side or a diagonal line of the plate P.

  In this way, the mask stage MST on which the mask M is placed and the plate stage (substrate stage) PST on which the plate P is placed are moved relatively synchronously in the scanning direction (X direction) in the XY plane, and the plate stage PST is moved. By performing scan exposure while driving and controlling two-dimensionally, the pattern of the mask M is sequentially exposed in each of the exposure regions R1 to R6 of the plate P shown in FIG.

  The plate stage PST on which the plate P is placed is configured to be movable in the scanning direction (X direction) on the base PB supporting the plate stage PST, and the plate P after the exposure processing is transferred to the substrate transport device ( In order to change to a new plate conveyed by the conveyance device 2, the plate moves to a plate exchange position. At the plate exchange position, a new plate placed on the tray 8a, which will be described later, is transported by the first arm 22 or the second arm 24 in place of the exposed plate P placed on the plate stage PST. Placed. The plate stage PST moves from the plate exchange position to the exposure position after a new plate is placed on the plate stage PST at the plate exchange position.

  The exposure apparatus also includes a substrate transport apparatus 2 that transports the plate P and the new plate in order to replace the exposed plate P with a new plate. The substrate transport device 2 applies a chemically amplified resist, which is a photosensitive agent, in a coating device (coater) included in a coater / developer device (not shown), and transfers the plate P transported to the inline port position from the inline port position to the plate replacement position. And is placed on the plate stage PST. Further, the substrate transport device 2 transports the exposed plate P to the plate exchange position in-line port position in order to develop it in a developing device (developer) provided in the coater / developer apparatus.

  FIG. 3 is a diagram showing a schematic configuration of the substrate transfer apparatus 2 according to this embodiment. As shown in FIGS. 1 and 3, the substrate transfer device 2 receives a plate P coated with a chemically amplified resist from a coater / developer device (not shown), and receives the plate P subjected to the exposure process in the exposure device. An inline port portion 4 is provided for delivery to the developer device. The inline port portion 4 includes a plate support portion 6 that supports the plate P, a tray 8a on which the plate P is placed and conveyed, and a tray support portion 10 that supports the tray 8a. The plate support unit 6 includes a plate support member 12 and a plurality of plate support pins 14 that support the lower surface of the plate P. Each lower end portion of the plate support pin 14 is fixed to the plate support member 12, and each upper end portion supports a predetermined position on the lower surface of the plate P.

  The tray support unit 10 includes a tray support member 16 and a plurality of tray support pins 18. Each lower end portion of the tray support pin 18 is fixed to the pin support member 20, and each upper end portion supports a predetermined position on the lower surface of the tray 8 a via the tray support member 16. Further, the tray support portion 10 is configured to be movable in the Z direction. By moving the tray support portion 10 in the Z direction, the plate P placed and transported on the tray 8a is detached from the tray 8a.

  In addition, the substrate transport apparatus 2 includes a first arm (moving means) 22 and a second arm (moving means) 24 that move the plate P between the inline port portion 4 and the plate stage PST. It has. The first arm 22 and the second arm 24 are configured not to interfere with each other when the plate P placed on the tray 8a is transported.

  While the first arm 22 and the second arm 24 are transporting the tray 8a on which the exposed plate P is placed, the temperature adjusting device 9 described below heats the hot plate H provided in the tray 8a. The degree of progress of the chemical reaction of the chemically amplified resist applied on the plate P is adjusted.

  FIG. 4 is a diagram showing the configuration of the tray 8a. As shown in FIG. 4, the tray 8 a includes a hot plate (heating plate) H. The heating regions H1 to H6 of the hot plate H corresponding to the exposure regions R1 to R6 (see FIG. 2) of the plate P are heated by a temperature management device (temperature management means) 9 for managing the temperature of the exposed plate P. Temperature and heating time are controlled. Since the temperature management device 9 performs temperature management for each of the exposure regions R1 to R6 of the plate P based on the exposure elapsed time, the temperature management device 9 controls the heating temperature and the heating time of the heating regions H1 to H6.

  The temperature management device 9 includes a first unit 9a for managing the temperature of the exposure region (first region) R1 on the plate P, a second unit 9b for managing the temperature of the exposure region (second region) R2, and an exposure region R3. Connected to a third unit 9c for temperature management, a fourth unit 9d for temperature management of the exposure area R4, a fifth unit 9e for temperature management of the exposure area R5, and a sixth unit 9f for temperature management of the exposure area R6, respectively. The control signal is output to each of the units 9a to 9f. Each unit 9a-9f performs thermal control with respect to exposure area | region R1-R6 corresponding to each based on the control signal from the temperature management apparatus 9. FIG. That is, each unit (heating device) 9a to 9f heats the exposure regions R1 to R6 by heating the heating regions (heating plates) H1 to H6.

  For example, the temperature management of the temperature management device 9 when the exposure of the exposure area R1 of the plate P is performed first, the sequential exposure areas R2, R3, R4, R5 are exposed, and the exposure of the exposure area R6 is performed last. Will be described.

  FIG. 5 is a cross-sectional view showing the configuration of the exposure region R1 and the exposure region R6 of the plate P before exposure. A chemically amplified resist r is applied on the plate P, and the chemical reaction of the chemically amplified resist starts upon exposure.

  FIG. 6 is a cross-sectional view showing the states of the exposure region R1 and the exposure region R6 during exposure of the exposure region R1. As shown in FIG. 6, by exposing the exposure pattern p on the exposure region R1, a chemical reaction of a portion corresponding to the exposure pattern p of the chemically amplified resist r applied to the exposure region R1 starts. On the other hand, since the exposure region R6 is not exposed, it is in the same state as the state before exposure shown in FIG.

  FIG. 7 is a cross-sectional view showing the states of the exposure region R1 and the exposure region R6 when the exposure of the exposure regions R2 to R5 is completed and the exposure region R6 is exposed. As shown in FIG. 7, the chemical reaction of the exposure pattern p exposed on the exposure region R1 is in progress. On the other hand, by exposing the exposure pattern p on the exposure region R6, a chemical reaction of a portion corresponding to the exposure pattern p of the chemically amplified resist r applied to the exposure region R6 starts. That is, as shown in FIG. 7, the progress of the chemical reaction of the exposure pattern p exposed on the exposure region R1 is different from the progress of the chemical reaction of the exposure pattern p exposed on the exposure region R6.

  After the exposure of the exposure regions R1 to R6 is completed, the plate stage PST moves to the plate exchange position, and the plate P is placed on the tray 8a at the plate exchange position. The temperature management device 9 controls the heating temperatures of the heating regions H1 to H6 corresponding to the exposure regions R1 to R6 to make the progress of the chemical reaction in the exposure regions R1 to R6 constant. That is, the temperature management device 9 outputs a control signal so as to heat the heating regions H1 to H6 at different temperatures for the units 9a to 9f. Specifically, the temperature management device 9 heats the heating region H1 to a temperature lower than the other heating regions H2 to H6 with respect to the first unit 9a in order to moderate the chemical reaction in the exposure region R1. Output a control signal. Further, in order to make the chemical reaction in the exposure region R2 faster than the chemical reaction in the exposure region R1 and more gradual than the chemical reaction in the exposure regions R3 to R6, the heating region H2 is higher than the heating region H1 with respect to the second unit 9b. A control signal is output so as to heat at a temperature lower than the heating regions H3 to H6.

  Similarly, for the third unit 9c, the fourth unit 9d, and the fifth unit 9e, the heating regions H3, H4, and H5 are heated at different temperatures depending on the progress of the chemical reaction in the exposure regions R3, R4, and R5. The control signal is output as follows. Further, in order to make the chemical reaction in the exposure region R6 faster than the chemical reaction in the exposure regions R1 to R5, the sixth unit 9f is controlled to heat the heating region H6 at a higher temperature than the other heating regions H1 to H5. Output a signal. That is, when the heating temperatures of the heating regions H1 to H6 are t1 to t6, t1 <t2 <t3 <t4 <t5 <t6.

  FIG. 8 is a cross-sectional view showing a state in which the exposure region R1 and the exposure region R6 are heated at different temperatures via the hot plate H after the exposure of the exposure regions R1 to R6. As shown in FIG. 8, since the exposure region R1 is heated at a lower temperature by the heating region H1, the chemical reaction of the chemically amplified resist r in the exposure region R1 proceeds slowly. Further, since the exposure region R6 is heated at a higher temperature by the heating region H6, the progress of the chemical reaction of the chemically amplified resist r in the exposure region R6 becomes faster. Therefore, the progress of the chemical reaction of the chemically amplified resist r in the exposure region R1 and the progress of the chemical reaction of the chemically amplified resist r in the exposed region R6 are constant. Although not shown in FIGS. 5 to 8, the progress of the chemical reaction of the chemically amplified resist r in the exposure regions R2 to R5 is also constant because it is heated at different temperatures.

  According to the substrate transfer apparatus according to the first embodiment, the temperature management is performed for each exposure region on the plate based on the exposure elapsed time, whereby the difference in the exposure elapsed time, that is, the chemical applied on the plate. It is possible to prevent an error from occurring in a line width or the like of a predetermined pattern exposed in each exposure region on the plate due to a difference in the progress degree of the chemical reaction of the amplification resist.

  In addition, according to the exposure apparatus of the first embodiment, since the substrate transport device that performs temperature management for each exposure area on the plate based on the elapsed exposure time is provided, each exposure area on the plate has a predetermined value. This pattern can be accurately exposed.

  In the substrate transfer apparatus according to the first embodiment, a hot plate is provided as a heating plate for heating the plate. For example, above the tray and the arm for transferring the plate, each exposure area of the plate is provided. You may make it provide the irradiation apparatus (for example, infrared irradiation apparatus) etc. which heat the corresponding part optically. That is, the temperature of the plate is controlled by irradiating each exposure region of the plate with infrared light emitted from the infrared irradiation device. The infrared irradiation apparatus includes a unit for performing temperature management for each exposure region on the plate, and each unit performs thermal control by optically heating the corresponding exposure region. In this case, the infrared light irradiation device is fixed at a predetermined location, and when the plate is conveyed to the predetermined location, each exposure region of the plate is heated to adjust the chemical reaction of the chemically amplified resist. In addition, the infrared light irradiation device may be configured to be movable integrally with the arm, and when the plate is transported from the plate exchange position to the inline port position, each exposure area of the plate is heated and chemically amplified. The chemical reaction of the mold resist may be adjusted. In this case, the conveyance time and the chemical reaction time can be advanced simultaneously, and the processing capability can be improved.

  Next, with reference to the drawings, an exposure apparatus according to a second embodiment of the present invention will be described. FIG. 9 is a view showing the schematic arrangement of an exposure apparatus according to the second embodiment. In the following description, the XYZ orthogonal coordinate system shown in FIG. 9 is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The XYZ orthogonal coordinate system is set so that the X axis and the Y axis are parallel to the plate P2, and the Z axis is set in a direction orthogonal to the plate P2.

  The light beam emitted from the illumination optical device IL2 including the light source and the illumination optical system illuminates the mask M2 on which a predetermined pattern is formed in a superimposed manner. The light transmitted through the pattern of the mask M2 forms a pattern image of the mask M2 on the plate P2, which is a photosensitive substrate for a flat panel display, for example, via the projection optical system PL2. The outer diameter of the plate P2 is larger than 500 mm, and the outer diameter indicates one side or a diagonal line of the plate P2.

  Thus, the mask stage MST2 on which the mask M2 is placed and the plate stage (substrate stage) PST2 on which the plate P is placed are relatively moved in the scanning direction (X direction) in the XY plane, and the plate stage PST2 is moved. By performing scan exposure while driving and controlling two-dimensionally, the pattern of the mask M2 is sequentially exposed in each exposure region of the plate P2.

  The plate stage PST2 on which the plate P2 is placed is configured to be movable in the scanning direction (X direction) on the base PB2 supporting the plate stage PST2. A hot plate H2 is placed on the base PB2. After the exposure, the plate P2 is placed on a hot plate (heating plate) H2. The heating temperature and the heating time of the heating area of the hot plate H2 corresponding to each of the exposure areas of the plate P2 are controlled by a temperature management device (temperature management means) 90 that manages the temperature of the exposed plate P2. The temperature management device 90 controls the heating temperature and the heating time of the heating area in order to perform temperature management for each exposure area of the plate P2 based on the exposure elapsed time.

  The temperature management device 90 is provided corresponding to each exposure area (each hot plate) on the plate P2, and is connected to a unit (not shown) for managing the temperature of each exposure area. Output a control signal. Each unit performs thermal control on the exposure area corresponding to each unit based on a control signal from the temperature management device 90. That is, each unit (heating device) heats each exposure region by heating each heating region (heating plate).

  That is, the chemically amplified resist is applied on the plate P2, and the chemical reaction of the chemically amplified resist starts upon exposure. The temperature management device 90 controls the heating temperature of the heating region corresponding to each exposure region, thereby making the progress of the chemical reaction in each exposure region constant. That is, the temperature management device 90 controls the corresponding unit to be heated at a lower temperature than the other heating regions in order to moderate the chemical reaction in the exposure region where the chemical reaction is progressing. Output a signal. In addition, in order to speed up the chemical reaction in the exposure area where the chemical reaction is delayed, a control signal is output to the corresponding unit so that the heating area is heated at a higher temperature than the other heating areas. By doing so, the progress of the chemical reaction of the chemically amplified resist becomes constant.

  According to the exposure apparatus of the second embodiment, the temperature management is performed for each exposure region on the plate based on the exposure elapsed time, whereby the difference in the elapsed exposure time, that is, the chemical amplification applied on the plate. It is possible to prevent an error from occurring in the line width or the like of a predetermined pattern exposed in each exposure region on the plate due to the difference in the progress of the chemical reaction of the mold resist.

  The exposure apparatus according to the second embodiment includes a hot plate H2 as a heating plate that heats the plate P2. However, as shown in FIG. 10, portions corresponding to each exposure region of the plate. You may make it provide the irradiation apparatus (for example, infrared irradiation apparatus) 100 which optically heats. In this case, the exposed plate P2 is disposed at a position where infrared light emitted from the infrared irradiation device 100 is irradiated, and each exposure region of the plate P2 is irradiated with infrared light emitted from the infrared irradiation device 100. Is used to control the temperature of the plate P2. The infrared irradiation apparatus 100 includes units (not shown) for performing temperature management for each exposure region on the plate P2, and each unit is thermally controlled by optically heating the corresponding exposure region. Apply.

In each of the above-described embodiments, heating is performed so as to apply different temperatures for each exposure region on the plate. However, depending on the chemical reaction of the chemically amplified resist for each exposure region on the plate, exposure is performed. You may make it heat with different time for every area | region. That is, the first exposure area is heated for a shorter time compared to the other exposure areas, and the last exposure area is heated for a longer time than the other exposure areas. Moreover, you may make it heat so that a different temperature change may be provided for every exposure area | region according to the chemical reaction of the chemically amplified resist for every exposure area | region on a plate. That is, in the first exposure area, a temperature change that causes a slow chemical reaction compared to the other exposure areas (heating starts at a low temperature T _L and gradually decreases to a predetermined temperature T _T that is a lower temperature). The temperature is changed in such a manner that the chemical reaction is faster in the final exposure area than in the other exposure areas (heating starts at a high temperature T _H and gradually reaches a predetermined temperature T _T. Lower the temperature).

  Further, in each of the above-described embodiments, an example is shown in which temperature control is performed by heating each heating area corresponding to each exposure area on one hot plate, but a hot plate is provided for each exposure area of the plate. It is also possible to control the temperature by heating each hot plate.

  In the exposure apparatus according to each of the above-described embodiments, the reticle (mask) is illuminated by the illumination optical system, and the transfer pattern formed on the mask is exposed to the photosensitive substrate (plate) using the projection optical system. Thus, a micro device (semiconductor element, imaging element, liquid crystal display element, thin film magnetic head, etc.) can be manufactured. FIG. 11 is a flowchart of an example of a technique for obtaining a semiconductor device as a micro device by forming a predetermined circuit pattern on a plate or the like as a photosensitive substrate using the exposure apparatus according to each of the above embodiments. Will be described with reference to FIG.

  First, in step S301 in FIG. 11, a metal film is deposited on one lot of plates. Next, a chemically amplified resist is applied on the metal film on the one lot of plates (step S302). Thereafter, in step S303, using the exposure apparatus according to each of the above-described embodiments, the pattern image on the mask is sequentially exposed and transferred to each shot area on the one lot of plates via the projection optical system. The Thereafter, in step S304, the photoresist on the one lot of plates is developed, and in step S305, etching is performed on the one lot of plates using the resist pattern as a mask to obtain a pattern on the mask. Corresponding circuit patterns are formed in each shot area on each plate.

  Thereafter, a device pattern such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer. According to the above-described microdevice manufacturing method, high-precision exposure can be performed using the exposure apparatus according to each of the above-described embodiments, so that a device such as a good semiconductor element can be obtained. In steps S301 to S305, a metal is vapor-deposited on the plate, and a chemically amplified resist is applied, exposed, developed, and etched on the metal film. Prior to these steps, steps S301 to S305 are performed. Needless to say, after forming a silicon oxide film on the plate, a chemical amplification resist may be applied, exposed, developed, and etched on the silicon oxide film.

  In the exposure apparatus according to the above-described embodiment, a liquid crystal display element as a micro device is formed by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a thin transparent substrate such as a plate (glass substrate). It can also be obtained. Hereinafter, an example of the technique at this time will be described with reference to the flowchart of FIG. In FIG. 12, in the pattern forming step S401, the exposure of the mask according to each of the above embodiments is used to transfer and expose the mask pattern onto a photosensitive substrate (such as a glass substrate) coated with a chemically amplified resist as a photosensitive agent. A so-called photolithography process is performed. By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate undergoes steps such as a developing step, an etching step, and a resist stripping step, whereby a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step S402.

  Next, in the color filter forming step S402, a large number of groups of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three of R, G, and B A color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning line direction. Then, after the color filter formation step S402, a cell assembly step S403 is executed. In the cell assembly step S403, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation step S401, the color filter obtained in the color filter formation step S402, and the like. In the cell assembly step S403, for example, liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern formation step S401 and the color filter obtained in the color filter formation step S402, and a liquid crystal panel (liquid crystal cell ).

  Thereafter, in a module assembly step S404, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display element, high-precision exposure can be performed using the exposure apparatus according to each of the above-described embodiments, so that a good liquid crystal display element can be obtained.

It is a figure which shows schematic structure of the exposure apparatus concerning 1st Embodiment. It is a figure which shows the structure of the plate concerning 1st Embodiment. It is a figure which shows schematic structure of the conveying apparatus with which the exposure apparatus concerning 1st Embodiment is provided. It is a figure which shows the structure of the hot plate with which the tray concerning 1st Embodiment is provided. It is sectional drawing which shows the structure of the 1st exposure area | region of the plate before exposure, and the last exposure area | region. It is sectional drawing which shows the state of the 1st exposure area | region and the last exposure area | region at the time of exposure of the 1st exposure area | region. It is sectional drawing which shows the state of the first exposure area | region and the last exposure area | region at the time of exposure of the last exposure area | region. It is sectional drawing which shows the state which heated the first exposure area | region and the last exposure area | region through the hot plate at different temperature after finishing exposure of a plate. It is a figure which shows schematic structure of the exposure apparatus concerning 2nd Embodiment. It is a figure which shows schematic structure of another exposure apparatus. It is a flowchart which shows the manufacturing method of the semiconductor device as a microdevice concerning embodiment of this invention. It is a flowchart which shows the manufacturing method of the liquid crystal display element as a microdevice concerning embodiment of this invention.

Explanation of symbols

IL, IL2 ... illumination optical device, M, M2 ... mask, MST, MST2 ... mask stage, PL, PL2 ... projection optical system, P, P2 ... plate, R1 to R6 ... exposure area, PST, PST2 ... plate stage, H , H2 ... hot plate, 2 ... substrate transfer device, 4 ... in-line port section, 8a ... tray, 9, 90 ... temperature control device, 22 ... first arm, 24 ... second arm, 100 ... infrared irradiation device.

Claims (13)

In a transfer device for transferring an exposed substrate,
Moving means for moving the substrate mounted thereon;
Temperature management means for performing temperature management of the exposed substrate,
The transport apparatus according to claim 1, wherein the temperature management means performs temperature management for each area of the substrate based on an exposure elapsed time.   The temperature management means includes a first unit that performs temperature management of the first region on the substrate, and a second unit that performs temperature management of a second region different from the first region on the substrate, 2. The transport apparatus according to claim 1, wherein the unit performs thermal control on a corresponding exposure area.   The said unit has a heating apparatus which heats the part corresponding to the said area | region through a heating plate, The conveying apparatus of Claim 2 characterized by the above-mentioned.   The said unit has an irradiation apparatus which optically heats the part corresponding to the said area | region, The conveying apparatus of Claim 2 characterized by the above-mentioned.   The temperature management means performs heating so as to apply a different temperature for each region of the substrate based on the elapsed exposure time, heating with a different time for each region of the substrate, and a different temperature change for each region of the substrate. The conveying apparatus according to any one of claims 1 to 4, wherein any one of heating is performed so as to apply the heat.   The transport apparatus according to claim 1, wherein the substrate is a substrate having an outer diameter larger than 500 mm.   The said board | substrate is a board | substrate for flat panel displays, The conveying apparatus as described in any one of the Claims 1 thru | or 6 characterized by the above-mentioned. An exposure unit that exposes a predetermined pattern to a substrate coated with a resist;
An exposure apparatus comprising the transfer device according to claim 1 to transfer the substrate exposed by the exposure unit. In an exposure apparatus that exposes a predetermined pattern to a substrate coated with a resist,
Temperature management means for performing temperature management of the exposed substrate,
The exposure apparatus according to claim 1, wherein the temperature management means performs temperature management for each area of the substrate based on an exposure elapsed time.   The temperature management means performs heating so as to apply a different temperature for each region of the substrate based on the elapsed exposure time, heating with a different time for each region of the substrate, and a different temperature change for each region of the substrate. The exposure apparatus according to claim 9, wherein any one of heating is performed so as to provide the above.   The exposure apparatus according to any one of claims 8 to 10, wherein the substrate is a substrate having an outer diameter larger than 500 mm.   The exposure apparatus according to claim 8, wherein the substrate is a substrate for a flat panel display. An exposure step of exposing a predetermined pattern on a photosensitive substrate using the exposure apparatus according to any one of claims 8 to 12,
A developing step of developing the photosensitive substrate exposed by the exposing step;
A method for manufacturing a microdevice, comprising:

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