KR20230035275A - Substrate heating unit - Google Patents

Abstract

Disclosed is a substrate heating unit. The substrate heating unit comprises: a rotatable chuck stage having a substrate put on top thereof; a rotation part having a hollow shape and combined with the chuck stage to rotate the chuck stage; a back nozzle provided at the center of the upper part of the chuck stage through the inside of the rotation part and spraying processing liquid to a rear surface of the substrate; a heat generation part arranged with a gap from the upper part of the chuck stage and having lamps in the shape of a ring, which are concentrically arranged at different radial distances from the center of the chuck stage; a reflecting plate provided between the heat generation part and the chuck stage and reflecting thermal energy, which is radiated from the heat generation part, toward the substrate; and temperature sensor assemblies installed on the reflecting plate to measure the temperature of each of the lamps. Therefore, provided is a substrate heating unit capable of heating a substrate to a target temperature without causing overload on temperature sensors.

Description

Substrate heating unit {SUBSTRATE HEATING UNIT}

The present invention relates to a substrate heating unit, and more particularly, to a substrate heating unit capable of heating a substrate to a target temperature without overloading.

In general, processes for processing glass substrates or wafers in flat panel display device manufacturing or semiconductor manufacturing processes include a photoresist coating process, a developing process, an etching process, an ashing process, and the like. Various processes are performed.

Each process includes a wet cleaning process using chemical or deionized water to remove various contaminants attached to the substrate and a drying process to dry the chemical or deionized water remaining on the substrate surface. ) process is performed.

Recently, an etching process for selectively removing a silicon nitride film and a silicon oxide film has been performed using an aqueous chemical solution used at a high temperature such as sulfuric acid or phosphoric acid.

In a substrate processing apparatus using a high-temperature chemical aqueous solution, a substrate heating apparatus for heating a substrate is applied and utilized in order to improve an etching rate and uniformity.

However, in the existing substrate heating device, the temperature sensor for sensing the heater is made of stainless steel, so when the setting value is set low, the substrate temperature reaches the target temperature (eg 200 degrees). will not be able to In addition, if the temperature sensor is heated after the first process and the second process is performed without being sufficiently cooled, the set value (set measurement temperature) is quickly reached due to the heating of the temperature sensor, and the substrate does not reach the target temperature. will not be able to Contrary to this, when the setting value of the temperature sensor is set higher, there is a problem of causing a sensor failure and malfunction.

Embodiments of the present invention are intended to provide a substrate heating unit capable of heating a substrate to a target temperature without overloading a temperature sensor.

Embodiments of the present invention are intended to provide a substrate heating unit in which a temperature sensor can block conduction heat transferred from a surrounding structure in addition to heat transferred from a heating element.

Embodiments of the present invention are intended to provide a substrate heating unit capable of rapidly lowering the temperature of a temperature sensor.

The problem to be solved by the present invention is not limited thereto, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

According to one aspect of the present invention, a rotatable chuck stage on which a substrate is placed; a rotation unit having a hollow shape and coupled to the chuck stage to rotate the chuck stage; a back nozzle unit provided at the upper center of the chuck stage through the inside of the rotation unit and injecting a processing liquid to the rear surface of the substrate; a heating unit having ring-shaped lamps disposed spaced apart from an upper part of the chuck stage and concentrically arranged at different radial distances from the center of the chuck stage; a reflective plate provided between the heating unit and the chuck stage and reflecting thermal energy emitted from the heating unit toward the substrate; and temperature sensor assemblies installed on the reflective plate to measure the temperature of each of the lamps.

In addition, the temperature sensor assembly includes a fixing block having bolt fastening holes for fixing to the reflective plate; a thin supporting plate extending from the fixing part to one side and spaced apart from the reflecting plate; a temperature sensor element to which a lead wire for signal extraction is connected and located on the lower surface of the support plate; a thin cover plate provided to surround the temperature sensor element and having an edge fixed to the lower surface of the support plate by welding; and an insulating spacer installed between the fixing block and the reflective plate to block heat transferred from the reflective plate.

In addition, the fixing block, the support plate, and the cover plate may have a gold plating layer.

According to the present invention, the temperature sensor assembly minimizes the heat transmitted from the reflective plate to measure only the heat of the pure IR lamp, sets the setting value of the temperature sensor low to heat the substrate to the target temperature without overload, and the temperature of each process It has a special effect of reducing the error between processes by making the sensor temperature the same.

According to the present invention, since the fixing block, the support plate, and the cover plate of the temperature sensor assembly are gold-plated, heat transferred from the reflection plate is filtered to lower the setting value of the temperature sensor, so that the temperature sensor can operate smoothly.

According to the present invention, the support plate on which the temperature sensor element is mounted is disposed adjacent to the through hole formed in the reflective plate, so that cooling by a cooling gas is possible. Therefore, since the temperature sensor heated after the first process can be lowered in a short time, the second process can be performed, which has a special effect of reducing process time and substrate heating time deviation.

1 is a plan view schematically showing a substrate processing facility according to an embodiment of the present invention.
FIG. 2 is a plan configuration diagram showing the configuration of the processing device shown in FIG. 1 .
3 is a cross-sectional side view showing the configuration of a processing device according to the present invention.
4 is a cross-sectional view of the substrate heating unit.
FIG. 5 is a view showing main parts of FIG. 4 .
6A and 6B are views showing a temperature sensor assembly installed on a reflective plate.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following examples. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shapes of elements in the figures are exaggerated to emphasize clearer description.

Referring to FIG. 1 , a substrate processing system 1000 of the present invention may include an index unit 10 , a buffer unit 20 and a processing unit 50 .

The index unit 10, the buffer unit 20 and the processing unit are arranged in a line. Hereinafter, the direction in which the index unit 10, the buffer unit 20, and the processing unit 50 are arranged is referred to as a first direction, and a direction perpendicular to the first direction when viewed from above is referred to as a second direction. A direction perpendicular to the plane including the first direction and the second direction is defined as a third direction.

The index unit 10 is disposed in the front of the substrate processing system 1000 in the first direction. The index unit 10 includes four load ports 12 and one index robot 13.

The four load ports 12 are disposed in front of the index unit 10 in the first direction. A plurality of load ports 12 are provided and they are arranged along the second direction. The number of load ports 12 may increase or decrease depending on process efficiency and footprint conditions of the substrate processing system 1000 . A carrier (eg, a cassette, a FOUP, etc.) accommodating a substrate W to be provided to the process and a substrate W after the process process is seated in the load ports 12 . The carrier 16 is formed with a plurality of slots for accommodating substrates in a state in which they are arranged horizontally with respect to the ground.

The index robot 13 is disposed adjacent to the load port 12 in the first direction. The index robot 13 is installed between the load port 12 and the buffer unit 20 . The index robot 13 transfers the substrate W waiting on the upper layer of the buffer unit 20 to the carrier 16 or transfers the substrate W waiting on the carrier 16 to the lower layer of the buffer unit 20. do.

The buffer unit 20 is installed between the index unit 10 and the processing unit. The buffer unit 20 temporarily accommodates a substrate W to be provided to a process before being transferred by the index robot 13 or a substrate W whose process has been completed before being transferred by the main transfer robot 30 is stored and waits. is a place to

The main transfer robot 30 is installed in the moving passage 40 and transfers substrates between each processing device 1 and the buffer unit 20 . The main transfer robot 30 transfers substrates to be provided for a process waiting in the buffer unit 20 to each processing unit 1 or transfers substrates processed in each processing unit 1 to the buffer unit 20. transfer

The moving passage 40 is disposed along the first direction in the processing unit and provides a passage through which the main transfer robot 30 moves. On both sides of the moving passage 40, processing devices 1 are disposed facing each other along the first direction. Moving rails are installed in the moving passage 40 so that the main transfer robot 30 can move along the first direction and move up and down to the upper and lower floors of the processing device 1 and to the upper and lower floors of the buffer unit 20 .

The processing device 1 is disposed facing each other on both sides of the moving passage 40 where the main transfer robot 30 is installed. The substrate processing system 1000 includes a plurality of upper and lower processing devices 1, but the number of processing devices 1 may increase or decrease depending on the process efficiency and footprint conditions of the substrate processing system 1000. there is. Each processing device 1 is composed of an independent housing, and thus, a process of processing a substrate in an independent form can be performed in each processing device.

In the following embodiment, an apparatus for cleaning a substrate using processing fluids such as high-temperature sulfuric acid, alkaline chemical solution (including ozone water), acidic chemical solution, rinsing liquid, and dry gas (gas containing IPA) will be described as an example. However, the technical spirit of the present invention is not limited thereto, and may be applied to various types of devices that perform a process while rotating a substrate, such as an etching process.

2 is a plan configuration diagram showing the configuration of a processing device according to the present invention. 3 is a cross-sectional side view showing the configuration of a processing device according to the present invention.

In this embodiment, a semiconductor substrate has been shown and described as an example as a substrate processed by the sheet type processing device 1, but the present invention is not limited thereto, and a substrate for a liquid crystal display, a substrate for a plasma display, a FED (Field Emission Display) ) substrates, substrates for optical disks, substrates for magnetic disks, substrates for optical magnetic disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.

Referring to FIGS. 2 and 3 , a sheet type processing device 1 according to the present invention is a device for removing foreign substances and film materials remaining on a heated substrate surface using various processing fluids, and includes a chamber 800 and a processing container. 100 , a substrate heating unit 200 , a chemical solution supply member 300 , a fixed nozzle 900 and a process exhaust unit 500 .

The chamber 800 provides a sealed inner space, and a fan filter unit 810 is installed on the top. The fan filter unit 810 generates a vertical air current inside the chamber 800 .

The fan filter unit 810 is a unit in which a filter and an air supply fan are modularized, and is a device that filters high-humidity outdoor air and supplies it to the inside of the chamber. High-humidity outside air passes through the fan filter unit 810 and is supplied into the chamber to form a vertical airflow. This vertical airflow provides a uniform airflow over the substrate, and contaminants (fume) generated in the process of processing the substrate surface by the processing fluid pass through the intake ducts of the processing container 100 together with the air to the process exhaust. By being discharged to 500 and removed, high cleanliness inside the processing vessel is maintained.

As shown in FIG. 3 , the chamber 800 is divided into a process area 816 and a maintenance area 818 by a horizontal partition wall 814 . Although only a portion is shown in the drawing, the maintenance area 818 includes the discharge lines 141, 143, and 145 connected to the processing container 100, the exhaust line 510, the driving unit of the lifting unit, and the first nozzle of the chemical liquid supply member 300 ( 310), the maintenance area 818 is a space in which a driving unit, a supply line, etc. connected to the substrate processing area are located.

The processing container 100 has a cylindrical shape with an open top and provides a process space for processing the substrate w. The open upper surface of the processing container 100 is provided as a path for transporting and transporting the substrate w. A substrate heating unit 200 is located in the process space. The substrate heating unit 200 heats and rotates the substrate W while the substrate W is supported during the process.

The processing vessel 100 provides a lower space to which the exhaust duct 190 is connected at the lower end so that forced exhaust is performed. In the processing container 100, first, second, and third annular suction ducts 110, 120, and 130 are disposed in multiple stages to introduce and suck in chemical liquid and gas scattered on a rotating substrate.

The annular first, second and third suction ducts 110, 120 and 130 have exhaust ports H communicating with one common annular space (corresponding to the lower space of the container). An exhaust duct 190 connected to the exhaust member 400 is provided in the lower space.

Specifically, the first to third suction ducts 110, 120, and 130 each have a bottom surface having an annular ring shape and a side wall extending from the bottom surface and having a cylindrical shape. The second suction duct 120 surrounds the first suction duct 110 and is spaced apart from the first suction duct 110 . The third suction duct 130 surrounds the second suction duct 120 and is spaced apart from the second suction duct 120 .

The first to third suction ducts 110, 120, and 130 provide first to third recovery spaces RS1, RS2, and RS3 into which airflow containing the treatment liquid and fumes scattered from the substrate w flows. . The first recovery space RS1 is defined by the first suction duct 110, and the second recovery space RS2 is defined by the separation space between the first suction duct 110 and the second suction duct 120, , The third recovery space RS3 is defined by the separation space between the second suction duct 120 and the third suction duct 130.

The upper surfaces of each of the first to third suction ducts 110, 120, and 130 have an open central portion, and are formed of inclined surfaces gradually increasing in distance from the corresponding bottom surface toward the opening from the connected sidewall. Accordingly, the treatment liquid scattered from the substrate w flows into the recovery spaces RS1 , RS2 , and RS3 along the upper surfaces of the first to third suction ducts 110 , 120 , and 130 .

The first treatment liquid introduced into the first recovery space RS1 is discharged to the outside through the first recovery line 141 . The second treatment liquid introduced into the second recovery space RS2 is discharged to the outside through the second recovery line 143 . The third treatment liquid introduced into the third recovery space RS3 is discharged to the outside through the third recovery line 145 .

The process exhaust unit 500 is responsible for exhausting the inside of the processing container 100 . For example, the process exhaust unit 500 provides exhaust pressure (suction pressure) to a suction duct recovering a treatment liquid among the first to third suction ducts 110, 120, and 130 during a process. The process exhaust unit 500 includes an exhaust line 510 connected to the exhaust duct 190 and a damper 520 . The exhaust line 510 receives exhaust pressure from an exhaust pump (not shown) and is connected to a main exhaust line buried in the floor space of a semiconductor production line (fab).

Meanwhile, the processing vessel 100 is coupled with an elevating unit 600 that changes the vertical position of the processing vessel 100 . The lifting unit 600 linearly moves the processing container 100 in the vertical direction. As the processing container 100 moves up and down, the relative height of the processing container 100 with respect to the substrate heating unit 200 is changed.

The lifting unit 600 has a bracket 612, a moving shaft 614, and an actuator 616. The bracket 612 is fixedly installed on an outer wall of the processing container 100, and a moving shaft 614 moved in a vertical direction by a driver 616 is fixedly coupled to the bracket 612. When the substrate W is loaded into or unloaded from the spin head 210, the processing chamber 100 descends so that the spin head 210 protrudes upward from the processing chamber 100. In addition, when the process is in progress, the height of the processing container 100 is adjusted so that the processing liquid can flow into the predetermined suction ducts 110, 120, and 130 according to the type of the processing liquid supplied to the substrate W. Accordingly, the relative vertical position between the processing container 100 and the substrate w is changed. Accordingly, the treatment chamber 100 may have different types of treatment liquid and pollutant gas recovered for each of the recovery spaces RS1 , RS2 , and RS3 .

In this embodiment, the processing apparatus 1 vertically moves the processing vessel 100 to change the relative vertical position between the processing vessel 100 and the substrate heating unit 200 . However, the processing apparatus 1 may vertically move the substrate heating unit 200 to change a relative vertical position between the processing container 100 and the substrate heating unit 200 .

Fixed nozzles 900 are installed on top of the processing container 100 . The fixed nozzle 900 sprays the processing fluid to the substrate W placed on the spin head 210 . The spraying angle of the fixed nozzle 900 can be adjusted according to the processing position of the substrate.

The chemical solution supply member 300 discharges high-temperature chemicals for etching the surface of the substrate W. Here, the chemical may be sulfuric acid, phosphoric acid, or a mixture of sulfuric acid and phosphoric acid.

The chemical nozzle member 310 includes a nozzle 311 , a nozzle arm 313 , a support rod 315 , and a nozzle actuator 317 . The nozzle 311 is supplied with phosphoric acid through the supply unit 320 . The nozzle 311 ejects phosphoric acid onto the substrate surface. The nozzle arm 313 is an arm provided with a long length in one direction, and a nozzle 311 is mounted on the front end. The nozzle arm 313 supports the nozzle 311 . A support rod 315 is mounted at the rear end of the nozzle arm 313 . The support rod 315 is located below the nozzle arm 313 and is disposed perpendicular to the nozzle arm 313 . The nozzle driver 317 is provided at the lower end of the support rod 315 . The nozzle driver 317 rotates the support rod 315 around the longitudinal axis of the support rod 315 . As the support rod 315 rotates, the nozzle arm 313 and the nozzle 311 swing about the support rod 315 . The nozzle 311 may swing between the outside and the inside of the processing container 210 . Also, the nozzle 311 may eject phosphoric acid while swinging in a section between the center and the edge region of the substrate W.

Although not shown, the sheet type processing apparatus 1 may include supply members for injecting various processing fluids to the substrate in addition to the chemical solution supply member 300 .

FIG. 4 is a cross-sectional view showing a substrate heating unit, and FIG. 5 is a view showing main parts of FIG. 4 .

Referring to FIGS. 2 to 5 , the substrate heating unit 200 is installed inside the processing container 100 . The substrate heating unit 200 heats the substrate during processing. In addition, the substrate heating unit 200 supports the substrate W during the process, and may be rotated by a driving unit 240 to be described later while the process is in progress.

The substrate heating unit 200 includes a chuck stage 210, a quartz window 220, a rotating part 230, a back nozzle part 240, a heating part 250, a reflecting plate 260, and a temperature sensor assembly 270. include

The chuck stage 210 has a circular upper surface, and is coupled to the rotation unit 230 to rotate. Chucking pins 212 are installed at the edges of the chuck stage 210 . The chucking pins 212 penetrate the quartz window 220 and protrude upward from the quartz window 220 . The chucking pins 212 align the substrate W so that the substrate W supported by the plurality of support pins 214 is placed in the correct position. In addition, during the process, the chucking pins 212 come into contact with the side of the substrate (W) to prevent the substrate (W) from being separated from its original position.

The rotating part 230 has a hollow shape and is coupled with the chuck stage 210 to rotate the chuck stage 210 .

An upper part of the chuck stage 210 is installed with a heating unit 250 for heating the substrate to 150-250°C. The heating unit 250 includes a plurality of IR lamps 252 having different diameters, spaced apart from each other, and provided in a ring shape. Each IR lamp 252 is configured with a temperature sensor assembly 270 so that each can be controlled.

The heating unit 250 may be subdivided into a plurality of concentric zones. Each zone is provided with IR lamps 252 capable of individually heating each zone. The IR lamps 252 are formed in a ring shape concentrically arranged at different radial distances to the center of the chuck stage 210 . Although six IR lamps 252 are shown in this embodiment, it will be appreciated that this is only an example and the number of IR lamps may be increased or decreased depending on the degree of temperature control desired. As such, by controlling the temperature of each individual zone, the heat generating unit 250 provides the ability to monotonically control the temperature (ie, a continuous increase or decrease in temperature) according to the radius of the substrate during the process. do. To this end, a temperature sensor assembly 270 for individually checking the temperature of each IR lamp 252 is installed on the reflection plate 26 .

For example, in a structure in which the IR lamps 252 rotate together with the chuck stage 210, a slip ring may be used as a method of supplying power to the heating unit 250.

A reflection plate 260 may be provided between the heating unit 250 and the chuck stage 210 to transfer heat generated by the IR lamps 252 upward (toward the substrate). The reflective plate 260 may be supported by a nozzle body installed through the central space of the rotating part 230 . In addition, the reflection plate 260 includes a support end 268 formed at an inner end extending downward for stable support and supported by a bearing 232 on the rotating part 230 . The reflection plate 260 is provided in a fixed manner that does not rotate together with the chuck stage 210 .

Although not shown, cooling fins may be installed in the reflective plate 260 for the purpose of dissipating heat. In addition, cooling gas may be configured to flow on a lower surface of the reflective plate 260 to suppress heat generation. For example, the nozzle body 242 has a spray port 248 for spraying a cooling gas to a lower surface of the reflective plate in a direction in which the temperature sensor assemblies are disposed.

Meanwhile, a quartz window 220 for protecting the IR lamps 252 may be installed between the heating unit 250 and the substrate W. The quartz window 220 may be transparent and may rotate with the chuck stage 210 . The quartz window 220 includes support pins 224 . The support pins 224 are arranged in a regular arrangement at a predetermined distance apart from each other on the edge of the upper surface of the quartz window 220 and protrude upward from the quartz window 220 . The support pins 224 support the lower surface of the substrate W so that the substrate W is supported while being spaced apart from the quartz window 220 in an upward direction.

The back nozzle unit 240 is for injecting a chemical liquid onto the rear surface of the substrate, and includes a nozzle body 242 and a chemical liquid spraying unit 244 . The chemical liquid ejection unit 244 is located at the upper center of the chuck stage 210 and the quartz window 220 . The nozzle body 242 is installed through the hollow rotating part 200, and although not shown, a liquid chemical moving line, a gas supply line, and a purge gas supply line may be provided inside the nozzle body 242. The chemical transfer line supplies an etchant for etching the rear surface of the substrate W to the chemical spray unit 244, and the gas supply line supplies nitrogen gas to the rear surface of the substrate W to adjust the etching uniformity, and the purge gas The supply line supplies nitrogen purge gas to prevent etchant from penetrating between the quartz window and the nozzle body.

The temperature sensor assemblies 270 are installed in a row on a straight line of the reflection plate 260 to measure the temperature of each of the IR lamps 252 .

6A and 6B are views showing a temperature sensor assembly installed on a reflective plate.

The temperature sensor assembly 270 includes a fixing block 271, a support plate 272, a temperature sensor element 273, a cover plate 274, and an insulation spacer 278. In order to accurately measure the temperature of the IR lamp, the temperature sensor assembly having the above structure can measure and control the temperature by mounting the thin temperature sensor assembly on the reflection plate 260 that is close to the IR lamp. That is, the temperature sensor assembly has a structure very suitable for a narrow space.

The fixing block 271 has bolt fastening holes 271a for fixing to the reflective plate 260 . The support plate 272 is formed to extend to one side of the fixing block 271 in a thin shape. The support plate 272 is spaced apart from the upper surface of the reflective plate 260 , and a through hole 269 is formed in a portion of the reflective plate 260 facing the support plate 272 . Accordingly, the cooling gas flowing on the bottom surface of the reflective plate 260 may cool the temperature sensor assembly 270 through the through hole 269 . The temperature sensor element 273 is connected to a lead wire 273a for signal extraction and is located on the bottom surface of the support plate 272 . The temperature sensor element 273 is surrounded and supported by a cover plate 274, the edge of which is fixed to the bottom surface of the support plate 272 by welding. That is, the temperature sensor element 273 is not directly fixed to the support plate 272 but mounted while being supported by the cover plate 274 .

The heat insulating spacer 278 is installed on the bottom of the fixing block 271, that is, the heat insulating spacer 278 is inserted between the fixing block 271 and the reflective plate 260, and the temperature sensor assembly 170 is inserted from the reflective plate 260. ) to block conduction heat.

The above detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and describe preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed in this specification, within the scope equivalent to the written disclosure and / or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in the specific application field and use of the present invention are also possible. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to cover other embodiments as well.

1: treatment device 100: treatment vessel
200: substrate heating unit 250: heating unit
252; IR lamp 260: reflection plate
270: temperature sensor assembly

Claims (17)

In the apparatus for processing the substrate,
a processing container providing a processing space for processing a substrate;
a substrate heating unit that supports and heats the substrate during processing; and
And a supply member for injecting a processing liquid to the substrate supported by the substrate heating unit,
The substrate heating unit,
a chuck stage having an upper surface;
a rotation unit coupled to the chuck stage to rotate the chuck stage;
a window positioned above the chuck stage;
a heating unit located inside a space surrounded by the chuck stage and the window;
a reflective plate located below the heating part and fixedly installed not to rotate together with the chuck stage; and
and a spray port for spraying a cooling gas so that the cooling gas flows on a lower surface of the reflective plate. According to claim 1,
The substrate processing apparatus provided with a hollow shape of the rotation unit. According to claim 2,
A nozzle body for spraying liquid or gas to the bottom surface of the substrate is provided in the hollow of the rotating part,
The spray port is provided on the nozzle body. According to claim 3,
The reflective plate is supported on the nozzle body. According to claim 1,
The heating unit is positioned to be spaced apart from the upper surface of the chuck stage. According to any one of claims 1 to 4,
The window is positioned between the heating unit and the substrate placed on the substrate heating unit, and is provided together with the chuck stage. According to any one of claims 1 to 4,
The heating unit substrate processing apparatus including a lamp. According to claim 7,
The substrate processing apparatus provided with a plurality of lamps. A substrate heating unit for supporting and heating a substrate,
a chuck stage having an upper surface;
a rotation unit provided in a hollow shape and coupled to the chuck stage to rotate the chuck stage;
a window disposed above the chuck stage;
a heating unit disposed inside the space surrounded by the chuck stage and the window and including a lamp;
a plate fixing the heating unit and provided in a fixed manner that does not rotate together with the chuck stage; and
A spray port for spraying a cooling gas into a space surrounded by the chuck stage and the window;
The spray port sprays the cooling gas so that the cooling gas flows on the lower surface of the plate. According to claim 9,
A nozzle body for spraying liquid or gas to the bottom surface of the substrate is provided in the hollow of the rotating part,
The spray port is provided on the nozzle body. According to claim 10,
The plate is supported on the nozzle body substrate heating unit. According to any one of claims 9 to 11,
The substrate heating unit of claim 1 , wherein the window is positioned above the heating unit, is positioned below a substrate placed on the substrate heating unit, and rotates together with the chuck stage. A substrate heating unit for supporting and heating a substrate,
a chuck stage having an upper surface;
a rotation unit provided in a hollow shape and coupled to the chuck stage to rotate the chuck stage;
a quartz window positioned above the chuck stage;
a heating unit disposed inside a space surrounded by the chuck stage and the quartz window and including a lamp;
a plate fixing the heating part, provided in a fixed manner that does not rotate together with the chuck stage, and positioned above the chuck stage and below the lamp; and
And a spray port for spraying gas so that the gas flows on the bottom surface of the plate to suppress heat generation of the plate,
A substrate heating unit having a through hole through which the gas injected from the injection port is introduced in the plate. According to claim 13,
The heating unit includes a plurality of the lamps,
wherein the lamps have different diameters and are arranged concentrically at different radial distances with respect to the center of the chuck stage. According to claim 13,
The substrate heating unit is configured to inject a cooling gas in a central region of the plate when viewed from the top. According to claim 15,
The spray port is configured to spray the cooling gas in a lateral direction. According to claim 15,
The spray port is configured to spray the cooling gas in a direction from a central area on the bottom surface of the plate to an edge area.

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