KR20100028752A - Heating device heating substrate uniformly and substrate processing apparatus including the same - Google Patents

Abstract

PURPOSE: A heating device heating substrate uniformly and a substrate processing apparatus including the same are provided to suppress the temperature rise of a lamp heater by forming a purge hole and a purge slit on a reflective unit. CONSTITUTION: A substrate processing apparatus(100) comprises a chamber, a substrate pallet, a gas injection unit, a plurality of lamp heaters(160), a reflective unit(200), and a cooling gas injection unit. The chamber defines a reaction zone. A substrate mount is installed inside the chamber. The gas injection unit sprays the gas to the substrate. A plurality of lamp heaters heats the substrate. The reflective unit comprises the hole. The hole corresponds to the lamp heater. The cooling gas injection unit sprays the cooling gas into the hole. The cooling gas is sprayed to each lamp heater through the hole.

Description

Heating means for uniformly heating a substrate and a substrate processing apparatus comprising the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for processing a wafer or glass (hereinafter, referred to as a substrate) for manufacturing a semiconductor device or a flat panel display device, and more particularly, to a substrate processing apparatus capable of increasing the efficiency of an optical heating means. will be.

In general, for the manufacture of semiconductor devices or flat panel display devices, various processes are performed on silicon wafers, sapphire wafers, or glass (hereinafter, referred to as substrates). Thin film deposition process to form a thin film, photo-lithography process to expose selected portions of the thin film, and etching process to pattern the desired shape by removing the exposed portion of the thin film It is repeated several times, and also various processes, such as washing | cleaning, bonding, and cutting | disconnection, are involved.

Such thin film processing processes such as thin film deposition and etching have been generally performed in a chamber type thin film processing apparatus that defines a closed reaction region (E).

On the other hand, in general, in order to form a thin film on the surface of the substrate, it is efficient to sufficiently heat the substrate in advance. For example, when the SiN thin film is to be deposited, if the temperature of the substrate is heated to 700 to 750 ° C., and then the SiN thin film is deposited, the deposition efficiency is further improved in the deposition time and the deposition rate.

To this end, as shown in FIG. 1, the radiant heat of the lamp heater 60, which is an optical heating means, and the lamp heater 60 under the substrate heater 34 on which the substrate 2 is seated is disposed. Reflecting means 70 for reflecting to the substrate support 34.

However, the lamp heater 60 has some problems as follows.

First, due to an increase in the temperature of the lamp heater 60 itself, which is a substrate heating means, its life may be shortened or broken.

That is, the lamp heater 60 has a characteristic that the life of the lamp heater 60 is abruptly shortened when its temperature is 500 ° C. or higher, and it is difficult to use the lamp heater 60 for a long time at 1000 ° C. or higher due to the material limitation of the lamp heater 60.

Second, the lamp heater 60 is exposed to the reaction gas, a problem that a thin film is formed on the surface of the lamp heater 60 or contamination accumulates.

Through this, the heating efficiency of the lamp heater 30 can be shortened.

The present invention has been made in view of the above problems, and a first object of the present invention is to provide a thin film processing apparatus capable of suppressing a shortening of life due to a temperature rise of a lamp heater.

Through this, the second object is to improve the heating efficiency of the lamp heater.

In order to achieve the object as described above, the present invention comprises a chamber defining a reaction zone; A substrate stabilizer installed inside the chamber; Gas injection means installed on an upper portion of the substrate stabilizer to inject gas toward the substrate; A plurality of lamp heaters installed under the substrate stabilizer to heat the substrate; Reflecting means positioned below the plurality of lamp heaters and configured with holes corresponding to the respective lamp heaters; And a cooling gas injection means for injecting cooling gas into the hole, and cooling gas is injected into the respective lamp heaters through the hole.

The reflecting means may include a lower reflector having a hole and a side reflector positioned at both sides of the lower reflector and exposed to the rear surface of the lower reflector, and between the side reflector and the substrate holder. Slit (slit) is characterized in that formed in.

In addition, the lower reflector is provided with a receiving groove for accommodating the respective lamp heaters, characterized in that the holes are provided in each of the receiving grooves, the hole is along the longitudinal direction of the lamp heater 1 ~ 4 is characterized in that it is provided.

The plurality of lamp heaters may be arranged concentrically or radially on the same plane of the upper portion of the reflecting means, and the plurality of lamp heaters may be circular or straight.

And, the lamp heater is characterized in that located in the chamber, the chamber is characterized in that the cooling gas injection port for injecting the cooling gas to the lamp heater through the hole of the reflecting means .

At this time, the lamp heater is characterized in that it is installed on the outside of the transparent bottom surface of the chamber, characterized in that the heating means frame provided with the cooling gas injection port is provided below the reflecting means.

In addition, a cooling gas exhaust port is provided on the bottom or sidewall of the chamber, wherein the gas injection means includes a reaction gas supply passage passing through the chamber and the upper electrode, and a plurality of injection holes are formed in the entire area. Characterized in that the gas distribution plate perforated up and down.

In addition, the present invention is a substrate stabilizer on which the substrate is placed; A plurality of lamp heaters installed under the substrate stabilizer to heat the substrate; Reflecting means positioned below the plurality of lamp heaters and configured with holes corresponding to the respective lamp heaters; And cooling gas injection means for injecting cooling gas into the hole, and cooling gas is injected into each of the lamp heaters through the hole.

As described above, a purge hole or purge slit corresponding to each lamp heater is provided in a reflecting means positioned below the lamp heater to reflect radiant heat of the lamp heater to the lower electrode according to the present invention. By this configuration, it is possible to suppress the increase in the temperature of the lamp heater itself even when the lamp heater is used for a long time by allowing the cooling gas to be injected to each lamp heater from the outside.

Through this, there is an effect that can prevent the problem that the life of the lamp heater is shortened rapidly.

In addition, since the lamp heater is prevented from being exposed to the reaction gas by the cooling gas injected into the respective lamp heaters, a phenomenon in which a thin film is formed on the surface of the lamp heater or accumulation of contamination can be prevented. There is an effect that can improve the heating efficiency compared to the existing.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

First Embodiment

2 is a schematic cross-sectional view of a PECVD chamber type thin film processing apparatus according to a first embodiment of the present invention, and FIG. 3 is an enlarged view of region A of FIG.

As shown, the PECVD chamber type thin film processing apparatus has a process chamber 100 defining an enclosed reaction region E as an essential component.

In more detail, first, the process chamber 100 internally provides a sealed reaction region E for depositing a thin film on the substrate 102. For this purpose, the process chamber 100 has a bottom surface 111 and a bottom surface 111. The chamber body 110 is formed of sidewalls 113a and 113b perpendicular to the bottom surface 111, and the chamber lead 120 covers the chamber body 110.

Although not shown in the drawings, openings for entering and exiting the substrate 102 are formed at one side of the sidewalls 113a and 113b of the chamber body 110.

An exhaust port 136 is provided on the bottom to discharge residual gas in the internal reaction zone E and maintain a vacuum pressure through an external intake system (not shown).

The chuck to which the substrate 102 is seated by facing the upper electrode 132 to which the RF voltage is applied and the upper electrode 132 and the reaction region E interposed therebetween is disposed inside the process chamber 100. And a lower electrode 134 to which a bias voltage is applied.

At this time, the lower electrode 134 is made to be moved up and down by the external elevator assembly 150.

In addition, a gas distribution plate 140 in which a plurality of injection holes 142 are perforated up and down over the entire area is provided so as to diffuse the reaction gas supplied from the outside in the reaction region E entirely. The upper portion of the 100 is provided with a reaction gas supply path 138 for supplying the reaction gas into the reaction zone (E). The reaction gas supply passage 138 penetrates the center of the chamber lead 120 and the upper electrode 132.

In this case, a lower baffle (not shown) may be further provided below the upper electrode 132 for diffusion of the reaction gas introduced through the reaction gas supply path 138.

A lower portion of the lower electrode 134 is provided with a lamp heater 160 that is an optical heating means, and a lower portion of the lamp heater 160 reflects the radiant heat of the lamp heater 160 to the lower electrode 134. 200).

At this time, since the lamp heater 160 is for heating the substrate 102 uniformly, the lamp heater 160 is preferably the same as the lower electrode 134. In general, in the PECVD chamber type thin film processing apparatus, since the lower electrode 134 has a circular plane, the lamp heater 160 may also be manufactured in a circular shape, and the diameter of the lower electrode 134 may be larger than or similar to that of the lower electrode 134. .

Here, since the lamp heater 160 is provided outside the lower electrode 134, the manufacturing of the lower electrode 134 may be simplified, and the temperature difference of the substrate 102 may be uniformly heated outside the lower electrode 134. It can prevent occurrence.

That is, when the heating means such as the lamp heater 160 is provided in the lower electrode 134, when the non-uniform heating occurs by the heating means, the non-uniform heating is performed through the lower electrode 134. The temperature difference between the substrates 102 is caused by the temperature difference between the regions of the lower electrode 134.

However, as in the present invention, by providing a lamp heater 160 that is a heating means at the bottom of the lower electrode 134 and heating the lower electrode 134 through this, uneven heating by the lamp heater 160 When issued, the nonuniform heating first heats the lower electrode 134 and then indirectly heats the substrate 102, so that the nonuniform heating is first resolved by the lower electrode 134 to minimize the occurrence of temperature differences between the substrates 102. can do.

At this time, a plurality of lamp heaters 160 are provided along the concentric circles on the same plane of the reflecting means 200, each of the lamp heaters 160 is in the hollow body and the filament provided in the body and both ends of the body It is made of a power applying terminal that is provided and connected to the filament.

Since the temperature uniformity of the lamp heater 160 greatly affects the uniformity of the thin film of the substrate 102, the lamp heater 160 should be disposed to uniformly heat the lower electrode 134.

As a result, the lamp heater 160 heats the lower electrode 134 using radiant heat and indirectly heats the substrate 102 seated on the lower electrode 134. The lamp heater 160 uses radiant heat. The lower electrode 134 may be heated to a temperature in the range of 100 to 1200 ° C. Preferably, it is effective to heat the lower electrode 134 to a temperature of 300 ~ 1000 ℃.

At this time, the temperature of the lamp heater 160 of the present invention does not exceed 500 ℃, which is due to the reflecting means 200 provided in the lower portion of the lamp heater 160.

That is, the reflecting means 200 provided below the lamp heater 160 includes the lower reflecting part 210 and side reflecting parts 220a and 220b provided on both sides of the lower reflecting part 210, and thus, the lamp heater 160. By reflecting the radiant heat radiated to the lower side and both sides of the lower electrode 134 to improve the efficiency of the lamp heater 160.

At this time, the side reflectors 220a and 220b are further extended to the rear surface of the lower reflector 210 to be in contact with the bottom surface 111 of the chamber body 110, through which the lower reflector 210 of the reflecting means 200. ) Is not in contact with the bottom surface 111 of the chamber body (110).

The side reflectors 220a and 220b do not contact the lower electrodes 134, and form slits 250 between the side reflectors 220a and 220b and the lower electrodes 134.

The reflecting means 200 is preferably made of an opaque material such that the radiant heat of the lamp heater 160 is not transmitted. For example, the reflective means 200 may be made of quartz.

In particular, the present invention is characterized by configuring a purge hole (purge hole) or purge slit (230) perforated up and down in the reflecting means 200 corresponding to each lamp heater 160.

In addition, a cooling gas such as an inert gas for suppressing a temperature rise of each lamp heater 160 is injected into the bottom surface 111 of the chamber body 110 through the purge hole or the purge slit 230. Cooling gas injection port 115 is provided to make.

At this time, since the lower reflector 210 of the reflecting means 200 does not contact the bottom surface 111 of the chamber body 110, the cooling gas injection port 115 configured at the bottom surface 111 of the chamber body 110 is closed. Cooling gas injected through the gas is uniformly injected into the plurality of purge holes or the purge slits 230 formed in the lower reflector 210 of the reflecting means 200.

Therefore, since the lamp heater 160 has a characteristic of rapidly shortening its life when its temperature is 500 ° C. or higher, each lamp heater receives cooling gas from the outside through the purge hole or the purge slit 230 of the reflecting means 200. By spraying at 160, even when the lamp heater 160 is used for a long time, the temperature of the lamp heater 160 itself can be suppressed from rising to 500 ° C. or higher.

Through this, the temperature of the lamp heater 160 is raised to prevent the problem that the life is shortened sharply.

At this time, the cooling gas injected into each lamp heater 160 is exhausted through the slit 250 formed between the side reflectors 220a and 220b and the lower electrode 134.

In addition, it is possible to prevent the lamp heater 160 from being exposed to the reaction gas inside the process chamber 100 by the cooling gas injected into the lamp heaters 160.

That is, since the cooling gas is injected from the lower portion of the lamp heater 160, the pressure is increased in the upper space of the lamp heater 160, the reaction gas injected from the upper portion of the process chamber 100 and the side reflectors 220a and 220b. The slit 250 formed between the lower electrodes 134 may be prevented from flowing into the space between the lower electrode 134 and the lamp heater 160.

As a result, a phenomenon in which a thin film is formed on the surface of the lamp heater 160 or contamination is prevented may be prevented, and thus heating efficiency of the lamp heater 160 may be improved as compared with the conventional method.

Looking at the deposition mechanism through the thin film processing apparatus according to the present invention described above, in order to first reduce the process time before the substrate 102 into the process chamber 100, the lamp heater (below the lower electrode 134 ( The power is applied to 160 to preheat the lower electrode 134.

Subsequently, after the substrate 102 is seated on the lower electrode 134 of the process chamber 100, the lower electrode 134 is raised to face the substrate 102 at a predetermined interval with the gas distribution plate 140. Subsequently, RF voltages and bias voltages are applied to the upper and lower electrodes 132 and 134, and at the same time, a plurality of injection holes of the reaction gas flowing from the outside through the reaction gas supply path 138 are formed in the gas distribution plate 140. 142 is injected into the process chamber 100.

As a result, the reaction gas introduced into the reaction region E is excited by plasma, and the chemical reaction product of radicals contained therein is deposited on the substrate 102 as a thin film. When the thin film deposition is completed, the lower electrode 134 is lowered. After that, the reaction zone E is exhausted using the exhaust port 136 to prepare a new thin film deposition process following the replacement of the substrate 102.

Meanwhile, during this process, the substrate 102 is heated by the lamp heater 160 provided at the lower portion of the lower electrode 134, and at this time, through the purge hole or the purge slit 230 provided in the reflecting means 200. By allowing the cooling gas to be injected to the respective lamp heaters 160 from the outside, even if the lamp heaters 160 are used for a long time, the temperature of the lamp heaters 160 can be suppressed from rising.

Here, during the deposition process on the substrate 102 in earnest, it is preferable to lower the temperature of the lamp heater 160 than the lower electrode 134 on which the substrate 102 is seated.

Meanwhile, in the above-described drawings, the lower reflector 210 of the reflecting means 200 is illustrated in a thin plate shape, but the reflecting means 200 according to the exemplary embodiment of the present invention is not limited thereto, and various structures are possible. .

Here, the appearance of the reflecting means 200 in which the purge hole or the purge slit 230 is formed will be described in more detail.

4 is a cross-sectional view schematically showing another aspect of the reflecting means according to the present invention.

As shown, the reflecting means 200 is provided at both sides of the lower reflector 210 and the lower reflector 210 on which the lamp heater 160 is seated and positioned below the lamp heater 160. It consists of side reflectors 220a (not shown) located on both sides of the), and defines a lamp heater heating region in which the lamp heater 160 is located.

As a result, the radiant heat of the lamp heater 160 is reflected by the lower electrode 134, thereby improving the efficiency of the lamp heater 160.

At this time, the side reflector 220a (not shown) is further extended to the rear surface of the lower reflector 210 to be in contact with the bottom surface 111 of the chamber body 110, through which the lower reflector of the reflecting means (200) 210 is not in contact with the bottom surface 111 of the chamber body (110).

The reflecting means 200 is preferably made of an opaque material such that the radiant heat of the lamp heater 160 is not transmitted. For example, the reflective means 200 may be made of quartz.

In addition, the reflecting means 200 may be surface-treated with a material having excellent light reflection characteristics toward the lamp heater 160 to form a reflective film (not shown).

In particular, the lower reflector 210 on which the lamp heater 160 of the reflecting means 200 is provided provides a receiving groove 240 in which each lamp heater 160 can be accommodated.

That is, the reflecting means 200 provides a plurality of accommodating grooves 240 in the lower reflector 210 of the reflecting means 200 to accommodate each lamp heater 160 in the accommodating groove 240 thereof. The groove 240 is composed of both side surfaces 243a and 243b having a predetermined slope inwardly facing the bottom surface 241.

Then, a purge hole or a purge slit 230 is formed in the bottom surface 241 of each receiving groove 240.

Accordingly, by injecting cooling gas injected from the outside through the purge hole or the purge slit 230 provided in each of the receiving grooves 240 to the respective lamp heaters 160, even if the lamp heater 160 is used for a long time. It can suppress that the temperature of 160 itself raises to 500 degreeC or more.

In particular, by allowing each lamp heater 160 to be partially accommodated in the receiving groove 240 configured in the reflecting means 200, it is possible to thermally separate the adjacent lamp heaters 160, so that the temperature of the lamp heater 160 itself Can be prevented from rising more efficiently.

Through this, the temperature of the lamp heater 160 is raised to prevent the problem that the life is shortened sharply.

In addition, by allowing the lamp heater 160 to be stored in the accommodating groove 240, the lamp heater 160 may be more effectively prevented from being exposed to the reaction gas inside the process chamber 100. As a result, a phenomenon in which a thin film is formed or contamination accumulates on the surface of the lamp heater 160 may be prevented, and thus the heating efficiency of the lamp heater 160 may be further improved.

On the other hand, the receiving groove 240 of the reflecting means 200 can be variously modified according to the shape of the lamp heater 160, the shape of the lamp heater 160 will be described in more detail with reference to Figures 5a to 5b.

5A and 5B are plan views schematically illustrating a state in which a purge hole or a purge slit is formed on a reflecting means corresponding to each lamp heater according to an exemplary embodiment of the present invention.

As shown, the lower electrode (134 of FIG. 4) on which the substrate (102 of FIG. 4) is seated has a circular disk shape. Therefore, the lamp heater 160 is arranged in a plurality of circles having a single center so as to be positioned below the circular lower electrode 134 of FIG. 4 and to uniformly heat it.

Thus, as shown in FIG. 5A, each lamp heater 160 in a circle is arranged at a predetermined interval.

The circular lamp heater 160 is composed of a hollow body and a filament provided in the body, respectively, and a power applying terminal provided at both ends of the body and connected to the filament.

At this time, at least four purge holes or purge slits 230 formed on the reflecting means 200 corresponding to each circular lamp heater 160 are provided along the longitudinal direction of the circular lamp heater 160. desirable.

Alternatively, as illustrated in FIG. 5B, a plurality of linear lamp heaters 260 having different lengths may be arranged in a circular shape. In this case, the reflection means 200 corresponding to each of the linear lamp heaters 260 may be disposed on the reflective means 200. At least one purge hole or purge slit 230 configured in the center portion of the straight lamp heater 260 is preferably provided.

As a result, the cooling gas is injected into the respective lamp heaters 160 and 260, so that even when the lamp heaters 160 and 260 are used for a long time, the temperature of the lamp heaters 160 and 260 may be suppressed from rising.

As a result, the temperature of the lamp heaters 160 and 260 may be increased to prevent a problem of rapidly shortening the lifespan.

On the other hand, in the description and drawings of the present invention, the lamp heater 160 is arranged along the concentric circles on the same plane above the reflecting means 200, the lamp heater 160 may be arranged radially.

Second Embodiment

6 is a schematic cross-sectional view of a PECVD chamber type thin film processing apparatus according to a second embodiment of the present invention.

In this case, in order to avoid redundant description, the same reference numerals are given to the same parts that play the same role as the description of FIGS. 2 and 3, and only the characteristic contents to be described above will be described.

As shown, the PECVD chamber type thin film processing apparatus is an essential component of the process chamber 100 defining the sealed reaction area E. The process chamber 100 is internally applied to the thin film on the substrate 102. It provides a closed reaction zone (E) for the deposition on the process chamber 100 for this purpose, the chamber body 110 consisting of a bottom surface 311 and sidewalls 113a and 113b perpendicular to the bottom surface 311, It consists of a chamber lead 120 covering the chamber body 110.

Although not shown in the drawings, openings for entering and exiting the substrate 102 are formed at one side of the side walls 113a and 113b of the chamber body 110.

In addition, an exhaust port 136 is provided at one side of the side walls 113a and 113b of the chamber body 110 to discharge the residual gas in the internal reaction region E and maintain a vacuum pressure through an external intake system (not shown). It is done so.

In particular, the second embodiment of the present invention is characterized in that the bottom surface 311 of the chamber body 110 is made of a transparent material.

The chuck to which the substrate 102 is seated by facing the upper electrode 132 to which the RF voltage is applied and the upper electrode 132 and the reaction region E interposed therebetween is disposed inside the process chamber 100. And a lower electrode 134 to which a bias voltage is applied.

At this time, the lower electrode 134 is made to be moved up and down by the external elevator assembly 150.

In addition, a gas distribution plate 140 in which a plurality of injection holes 142 are perforated up and down over the entire area is provided so as to diffuse the reaction gas supplied from the outside in the reaction region E entirely. The upper portion of the 100 is provided with a reaction gas supply path 138 for supplying the reaction gas into the reaction zone (E). The reaction gas supply passage 138 penetrates the center of the chamber lead 120 and the upper electrode 132.

In this case, a lower baffle (not shown) may be further provided below the upper electrode 132 for diffusion of the reaction gas introduced through the reaction gas supply path 138.

In addition, an optical heating means for heating the substrate 102 seated on the lower electrode 132 is provided outside the process chamber 100. The heating means for the optical heater includes a lamp heater 160 and a lamp heater 160. ) And a heating means frame 300 provided with a reflecting means 200 for reflecting the radiant heat of the light to the lower electrode 134 and a cooling gas injection port 305.

Herein, in detail, each of the lamp heaters 160 is provided with a plurality of lamp heaters 160 arranged along concentric circles on the same plane above the reflecting means 200. Each of the lamp heaters 160 has a hollow body and a body inside. It is provided with a filament and a power applying terminal provided at both ends of the body connected to the filament.

In addition, the reflecting means 200 provided below the lamp heater 160 includes the lower reflecting part 210 and side reflecting parts 220a and 220b provided on both sides of the lower reflecting part 210. By reflecting the radiant heat radiated to the lower side and both sides of the lower electrode 134 to improve the efficiency of the lamp heater 160.

In this case, the side reflectors 220a and 220b are further extended to the rear surface of the lower reflector 210 to contact the heating means frame 300, whereby the lower reflector 210 of the reflector 200 is heated. It is not in contact with the frame 300.

The reflecting means 200 is preferably made of an opaque material such that the radiant heat of the lamp heater 160 is not transmitted. For example, the reflective means 200 may be made of quartz.

In particular, the present invention is characterized in that it comprises a purge hole or purge slit 230 perforated up and down in the reflecting means 200 corresponding to each lamp heater 160.

In addition, the heating means frame 300 is located below the reflecting means 200, and the cooling gas injection port 305 is fixed to the lamp heater 160 and the reflecting means 200 under the process chamber 100. It is provided so that the cooling gas from the outside to the respective lamp heater 160 through the purge hole or purge slit 230 of the reflecting means (200).

At this time, since the lower reflector 210 of the reflecting means 200 does not contact the heating means frame 300, the cooling gas injected through the cooling gas injection port 305 configured in the heating means frame 300 is reflected means. It is uniformly injected into a plurality of purge holes or purge slits 230 formed in the lower reflector 210 of the 200.

At this time, although not shown, the cooling gas injected into the cooling gas injection port 305 is exhausted through the cooling gas exhaust ports provided on the bottom surface 111 of the chamber body 110 or the side walls 113a and 113b of the chamber body 110. do.

As a result, the lamp heater 160 transmits the lower electrode 134 through the transparent bottom 311 of the chamber body 100 using radiant heat to indirectly direct the substrate 102 seated on the lower electrode 134. Heating.

At this time, the lamp heater 160 is injected by the inlet gas from the outside through the purge hole or purge slit 230 of the reflecting means 200 in the process of heating the lamp heater 160, Even if the heater 160 is used for a long time, the temperature of the lamp heater 160 can be suppressed from rising to 500 ° C or more.

Through this, the temperature of the lamp heater 160 is raised to prevent the problem that the life is shortened sharply.

In addition, since the lamp heater 160 is located outside the process chamber 100, the lamp heater 160 may be prevented from being exposed to the reaction gas inside the process chamber 100. As a result, a phenomenon in which a thin film is formed on the surface of the lamp heater 160 or contamination is prevented may be prevented, and thus heating efficiency of the lamp heater 160 may be improved as compared with the conventional method.

Meanwhile, the reflecting means 200 according to the second embodiment of the present invention in which the lamp heater 160 is formed outside the process chamber 100 and the lower reflecting portion 210 on which the lamp heater 160 is seated, respectively. An accommodating groove (240 of FIG. 4) may be provided in which the lamp heater 160 may be accommodated, and the accommodating groove (240 of FIG. 4) of the reflecting means 200 may vary depending on the shape of the lamp heater 160. It is deformable.

The lamp heater may also use a circular lamp heater 160, or may use a straight lamp heater 260.

In this case, when the circular lamp heater 160 is used, the purge hole or the purge slit 230 formed on the reflecting means 200 corresponding to each circular lamp heater 160 has a length of the circular lamp heater 160. The purge hole or the purge slit 230 formed on the reflecting means 200 corresponding to each of the lamp heater 260 of at least four or in the case of using a straight lamp heater 260 in the direction is provided It is preferable to provide at least 1 or more in the center part of the lamp heater 260.

The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

1 is a cross-sectional view schematically showing a general PECVD chamber type thin film processing apparatus.

2 is a schematic cross-sectional view of a PECVD chamber type thin film processing apparatus according to a first embodiment of the present invention.

3 is an enlarged view of region A of FIG. 2;

Figure 4 is a cross-sectional view schematically showing another aspect of the reflecting means according to the present invention.

5A to 5B are plan views schematically illustrating a state in which a purge hole or a purge slit is formed on a reflecting means corresponding to each lamp heater according to an exemplary embodiment of the present invention.

6 is a schematic cross-sectional view of a PECVD chamber type thin film processing apparatus according to a second embodiment of the present invention.

Claims (14)

A chamber defining a reaction zone; A substrate stabilizer installed inside the chamber; Gas injection means installed on an upper portion of the substrate stabilizer to inject gas toward the substrate; A plurality of lamp heaters installed under the substrate stabilizer to heat the substrate; Reflecting means positioned below the plurality of lamp heaters and configured with holes corresponding to the respective lamp heaters; Cooling gas injection means for injecting cooling gas into the hole And a cooling gas injected into the respective lamp heaters through the holes. The method of claim 1, And the reflecting means comprises a lower reflecting portion having a hole and a side reflecting portion positioned on both sides of the lower reflecting portion and extending to the rear surface of the lower reflecting portion. The method of claim 2, And a slit is formed between the side reflector and the substrate support. The method of claim 2, The lower reflector is provided with a receiving groove for receiving the respective lamp heater, the substrate processing apparatus, characterized in that the hole is provided in each of the receiving groove. The method of claim 4, wherein Substrate processing apparatus, characterized in that the hole is provided with 1 to 4 along the longitudinal direction of the lamp heater. The method of claim 4, wherein And the lamp heaters are arranged concentrically or radially on the same plane of the upper portion of the reflecting means. The method of claim 6, The plurality of lamp heaters are circular or straight, characterized in that the substrate processing apparatus. The method of claim 1, And the lamp heater is located inside the chamber. The method of claim 8, And the cooling gas injection port for injecting the cooling gas into the lamp heater through the hole of the reflecting means. The method of claim 1, The lamp heater is installed on the outside of the transparent bottom surface of the chamber substrate processing apparatus. The method of claim 10, And a heating means frame provided with the cooling gas injection port under the reflecting means. The method of claim 10, Substrate processing apparatus, characterized in that the cooling gas exhaust port is provided on the bottom or sidewall of the chamber. The method of claim 1, The gas injection means is a substrate processing apparatus comprising a reaction gas supply passage passing through the chamber and the upper electrode, and a gas distribution plate having a plurality of injection holes perforated up and down in the entire area. A substrate holder on which the substrate is placed; A plurality of lamp heaters installed under the substrate stabilizer to heat the substrate; Reflecting means positioned below the plurality of lamp heaters and configured with holes corresponding to the respective lamp heaters; Cooling gas injection means for injecting cooling gas into the hole And a cooling gas is injected into the respective lamp heaters through the holes.

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