KR20170026901A - Apparatus and method for treating a substrate - Google Patents

Abstract

The present invention relates to a substrate treating apparatus. According to one embodiment of the present invention, the substrate treating apparatus comprises: a treatment container having an upper portion being opened; a supporting unit provided to an inner space of the treatment container, and supporting a substrate; and a treatment liquid supply unit supplying a first treatment liquid and a second treatment liquid to the substrate placed on the supporting unit. The supporting unit comprises: a supporting plate; a chuck pin having a supporting portion provided to the supporting plate and supporting a side of the substrate, wherein a plurality of the supporting portions are provided to support the substrate at each different height based on the supporting plate. Accordingly, the present invention may adjust a height of a substrate in a process of treating the substrate.

Description

[0001] Apparatus and method for treating substrate [0002]

The present invention relates to a substrate processing apparatus and method, and more particularly, to a substrate processing apparatus and method capable of performing a process while uniformly heating a substrate during a substrate processing process.

In general, processes for processing glass substrates and wafers in the manufacture of flat panel display devices or semiconductor manufacturing processes include a photoresist coating process, a developing process, an etching process, an ashing process, and the like Various processes are performed.

In each step, a wet cleaning process using chemical or deionized water and a drying process (drying process) to remove the remaining chemical or pure water ) Process is carried out.

Recently, an etching process for selectively removing a silicon nitride film and a silicon oxide film using a processing solution used at a high temperature such as sulfuric acid or phosphoric acid is underway. In a substrate processing apparatus using a high-temperature chemical aqueous solution, a substrate heating apparatus for heating a substrate is applied to improve the etching rate. But. In such a substrate heating apparatus, when the substrate is etched with a high-temperature treatment liquid, the temperature of the entire region of the substrate is not uniform. Figure 1 shows the distribution of temperature over the radial distance of the substrate. C represents the center point of the substrate, and E1 and E2 represent the both side edge points of the substrate. Since a high temperature treatment liquid is applied to the center of the substrate, the temperature is relatively high and the temperature of the substrate is relatively low toward the edge. Therefore, the temperature of the substrate is not uniformly maintained, and the etching rate of the substrate is different.

The present invention provides a substrate processing apparatus capable of performing a process while adjusting a height of a substrate during a substrate processing process.

The present invention provides a substrate processing apparatus capable of uniformizing the etching rate for each region of the substrate by making the temperature of each region of the substrate uniform during the processing of the substrate.

A substrate processing apparatus of the present invention is provided.

According to an embodiment of the present invention, A support unit provided in the processing vessel and supporting the substrate; And a treatment liquid supply unit for supplying the first treatment liquid or the second treatment liquid to the substrate placed on the support unit, the support unit comprising: a support plate; And a chuck having a support provided on the support plate for supporting a side surface of the substrate. The support portion is provided with a plurality of support portions for supporting the substrate at different heights from the support plate.

According to an embodiment, the support portion includes a first support portion provided at a first height from the support plate and a second support portion provided at a second height higher than the first height.

According to one embodiment, the chuck pin includes a body provided with its longitudinal direction up and down, and the support is provided with a recessed groove outside the body.

According to an embodiment, the chuck pin includes a body provided with its longitudinal direction up and down, and the support part is provided with a protrusion protruding from the body in the inward direction of the support plate.

According to one embodiment, the support unit includes: a support pin for supporting a bottom surface of the substrate; And a support pin driver for moving the support pin up and down.

According to an embodiment, the supporting unit further includes a controller for controlling the support pin driver, wherein the controller controls the first processing step to process the substrate with the first processing solution, And controls the supporting pin driver so that the side surface of the substrate is supported by the second supporting portion in a second processing step of processing the substrate with the second processing solution.

According to one embodiment, the support unit further comprises a chuck pin driver for moving the chuck pin horizontally, and the controller controls the chuck pin driver, wherein when the first processing step is completed, The support pin moves the chuck pin to a position spaced apart from the side surface of the substrate, moves the support pin from the first height to the second height, and then moves the chuck pin in contact with the side surface of the substrate at the spaced- Position.

According to an embodiment, the support unit further includes a controller for controlling the support pin driver, wherein when the first substrate is processed with the first processing solution, And controls the support pin driver so that the side surface of the second substrate is supported by the second support portion when the second processing liquid is processed by the second processing liquid.

According to one embodiment, the first processing liquid is a first temperature and the second processing liquid is a second temperature lower than the first temperature.

According to one embodiment, the first treatment liquid is phosphoric acid.

According to one embodiment, the second treatment liquid is pure water.

According to one embodiment, the supporting unit further includes a heating member for heating the substrate, wherein the heating member includes an edge heater provided at an edge of the support plate.

According to an embodiment, the heating member may include a central heater provided inside the support plate rather than the edge heater; And a heater controller for controlling the heating member, wherein the heater controller independently controls the temperatures of the edge heater and the center heater.

According to an embodiment, the heater controller controls the temperature of the edge heater to be higher than the temperature of the center heater.

The present invention provides a support unit.

According to an embodiment of the present invention, a chuck pin is provided on an upper surface of the support plate and has a support portion for supporting a side surface of the substrate. The supports are provided in plurality to support the substrate at different heights.

According to an embodiment, the support portion includes a first support portion provided at a first height and a second support portion provided at a second height higher than the first height.

According to one embodiment, the support unit includes: a support pin for supporting a bottom surface of the substrate; And a support pin driver for moving the support pin up and down between the first height and the second height.

According to one embodiment, the apparatus further includes a heating member for heating the substrate, wherein the heating member includes an edge heater provided at an edge of the support plate.

According to an embodiment, the heating member may be a central heater provided inside the support unit rather than the edge heater; And a heater controller for controlling the heating member, wherein the heater controller independently controls the temperatures of the edge heater and the center heater.

The present invention provides a substrate processing method.

According to an embodiment of the present invention, in a first processing step of processing a substrate with a first processing solution in a supporting unit having a supporting plate, while the substrate is held at the first height from the supporting plate, A second processing step of processing the substrate by supplying the first processing liquid to the first processing liquid and the second processing liquid by processing the second processing liquid by the second processing liquid while maintaining the substrate at a second height higher than the first height from the supporting plate, And the substrate is processed by supplying a liquid.

According to an embodiment of the present invention, a substrate is processed in a supporting unit having a support plate, and when the first substrate is treated with the first processing solution, the first substrate is separated from the support plate by a first height, When the second substrate is treated with the second processing solution, the second substrate is processed from the support plate at a second height lower than the first height.

According to one embodiment, the edge of the substrate is heated to a higher temperature than the inside of the substrate.

According to one embodiment, the first treatment liquid is phosphoric acid.

According to one embodiment, the second treatment liquid is pure water.

According to an embodiment, the substrate is treated while heating the substrate at a lower portion, wherein the temperature of the first processing solution is a first temperature and the temperature of the second processing solution is a second temperature lower than the first temperature.

According to an embodiment, in the first processing step of processing the substrate with the first processing solution, the side surface of the substrate is supported by the first supporting part, and in the second processing step of processing the substrate with the second processing solution And the side surface of the substrate is supported by the second support portion.

According to an embodiment, when the first processing step is completed, the position of the chuck pin is moved by the support part to a position spaced apart from the side surface of the substrate, and the support pin is moved from the first height to the second And then moves the chuck pin to a contact position where the chuck pin is in contact with the side surface of the substrate at the spaced apart position.

According to an embodiment, when the first substrate is processed with the first processing liquid, the side surface of the first substrate is supported by the first supporting portion, and when processing the second substrate with the second processing liquid, 2 side of the substrate is supported by the second support portion.

According to an embodiment of the present invention, the substrate processing process can be performed while adjusting the height of the substrate.

According to an embodiment of the present invention, the temperature of the substrate can be uniformized during the substrate processing step, and the etching rate of the substrate can be made uniform.

1 is a graph showing a distribution of temperature according to a radial distance of a substrate during substrate processing by supplying a treatment liquid.
2 is a plan view schematically showing an example of a substrate processing apparatus provided with a substrate processing apparatus according to an exemplary embodiment of the present invention.
3 is a cross-sectional view of the substrate processing apparatus of Fig.
Figs. 4 and 5 are cross-sectional views showing the supporting unit of the substrate processing apparatus of Fig.
Fig. 6 is a plan view of the substrate processing apparatus of Fig. 2;
7 is a view showing an example of a support pin.
8 to 10 are views showing various embodiments and modifications of the chuck pin.
11 is a view showing the horizontal movement of the chuck pin.
FIGS. 12 to 20 are views sequentially illustrating a substrate processing process according to the present invention.
FIGS. 21 to 22 are views sequentially illustrating a substrate processing process according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

2 is a plan view schematically showing the substrate processing apparatus 1 of the present invention.

Referring to FIG. 2, the substrate processing apparatus 1 includes an index module 1000 and a process processing module 2000. The index module 1000 includes a load port 1200 and a transfer frame 1400. The load port 1200, the transfer frame 1400, and the process module 2000 are sequentially arranged in a line. Hereinafter, the direction in which the load port 1200, the transfer frame 1400, and the processing module 2000 are arranged is referred to as a first direction 12. A direction perpendicular to the first direction 12 is referred to as a second direction 14 and a direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as a third direction (16).

In the load port 1200, a carrier 1300 in which a substrate W is housed is seated. A plurality of load ports 1200 are provided and they are arranged in a line along the second direction 14. In FIG. 1, four load ports 1200 are shown. However, the number of load ports 1200 may increase or decrease depending on conditions such as process efficiency and footprint of the process processing module 2000. A carrier (1300) is formed with a slot (not shown) provided to support the edge of the substrate (W). A plurality of slots are provided in the third direction 16. The substrates W are placed in the carrier 1300 so as to be stacked apart from each other along the third direction 16. As the carrier 1300, a front opening unified pod (FOUP) may be used.

Process module 2000 includes a buffer unit 2200, a transfer chamber 2400, and a process chamber 2600. The transfer chamber 2400 is disposed so that its longitudinal direction is parallel to the first direction 12. Process chambers 2600 are disposed on one side and the other side of the transfer chamber 2400 along the second direction 14, respectively. The process chambers 2600 located at one side of the transfer chamber 2400 and the process chambers 2600 located at the other side of the transfer chamber 2400 are provided to be symmetrical with respect to the transfer chamber 2400. Some of the process chambers 2600 are disposed along the longitudinal direction of the transfer chamber 2400. In addition, some of the process chambers 2600 are stacked together. That is, at one side of the transfer chamber 2400, the process chambers 2600 may be arranged in an array of A X B (where A and B are each at least one natural number). Where A is the number of process chambers 2600 provided in a row along the first direction 12 and B is the number of process chambers 2600 provided in a row along the third direction 16. When four or six process chambers 2600 are provided on one side of the transfer chamber 2400, the process chambers 2600 may be arranged in an array of 2 X 2 or 3 X 2. The number of process chambers 2600 may increase or decrease. Unlike the above, the process chamber 2600 may be provided only on one side of the transfer chamber 2400. Also, unlike the above, the process chamber 2600 may be provided as a single layer on one side and on both sides of the transfer chamber 2400.

The buffer unit 2200 is disposed between the transfer frame 1400 and the transfer chamber 2400. The buffer unit 2200 provides a space for the substrate W to stay before the transfer of the substrate W between the transfer chamber 2400 and the transfer frame 1400. [ The buffer unit 2200 is provided with a slot (not shown) in which the substrate W is placed, and a plurality of slots (not shown) are provided to be spaced apart from each other in the third direction 16. The surface of the buffer unit 2200 facing the transfer frame 1400 and the surface facing the transfer chamber 2400 are opened.

The transfer frame 1400 conveys the substrate W between the buffer unit 2200 and the carrier 1300 that is seated on the load port 1200. The transfer frame 1400 is provided with an index rail 1420 and an index robot 1440. The index rail 1420 is provided so that its longitudinal direction is parallel to the second direction 14. The index robot 1440 is installed on the index rail 1420 and is linearly moved along the index rail 1420 in the second direction 14. The index robot 1440 has a base 1441, a body 1442, and an index arm 1443. The base 1441 is installed to be movable along the index rail 1420. Body 1442 is coupled to base 1441. The body 1442 is provided to be movable along the third direction 16 on the base 1441. Body 1442 is also provided to be rotatable on base 1441. The index arm 1443 is coupled to the body 1442 and is provided to be movable forward and backward relative to the body 1442. A plurality of index arms 1443 are provided and each is provided to be individually driven. The index arms 1443 are arranged to be stacked apart from each other along the third direction 16. Some of the index arms 1443 are used to transfer the substrate W from the processing module 2000 to the carrier 1300 while the other part is used to transfer the substrate W from the carrier 1300 to the processing module 2000. [ As shown in Fig. This can prevent particles generated from the substrate W before the processing process from adhering to the substrate W after the processing in the process of loading and unloading the substrate W by the index robot 1440.

The transfer chamber 2400 carries the substrate W between the buffer unit 2200 and the process chamber 2600 and between the process chambers 2600. The transfer chamber 2400 is provided with a guide rail 2420 and a main robot 2440. The guide rails 2420 are arranged so that their longitudinal directions are parallel to the first direction 12. The main robot 2440 is installed on the guide rail 2420 and is linearly moved along the first direction 12 on the guide rail 2420. The main robot 2440 has a base 2441, a body 2442, and a main arm 2443. The base 2441 is installed to be movable along the guide rail 2420. The body 2442 is coupled to the base 2441. The body 2442 is provided to be movable along the third direction 16 on the base 2441. Body 2442 is also provided to be rotatable on base 2441. The main arm 2443 is coupled to the body 2442, which is provided to be movable forward and backward relative to the body 2442. A plurality of main arms 2443 are provided so as to be individually driven. The main arms 2443 are arranged so as to be spaced apart from each other along the third direction 16. A main arm 2443 used when the substrate W is transferred from the buffer unit 2200 to the process chamber 2600 and a main arm 2443 used when the substrate W is transferred from the process chamber 2600 to the buffer unit 2200 The main arms 2443 may be different from each other.

In the process chamber 2600, a substrate processing apparatus 10 for performing a cleaning process on the substrate W is provided. The substrate processing apparatus 10 provided in each process chamber 2600 may have a different structure depending on the type of the cleaning process to be performed. Alternatively, the substrate processing apparatus 10 in each process chamber 2600 can have the same structure. Optionally, the process chambers 2600 are divided into a plurality of groups, and the substrate processing apparatuses 10 provided in the process chambers 2600 belonging to the same group have the same structure and are provided in the process chambers 2600 belonging to different groups The substrate processing apparatuses 10 may have different structures from each other. For example, when the process chambers 2600 are divided into two groups, a first group of process chambers 2600 is provided on one side of the transfer chamber 2400 and a second group of process chambers 2600 is provided on the other side of the transfer chamber 2400 Process chambers 2600 may be provided. Alternatively, a first group of process chambers 2600 may be provided on the lower layer and a second group of process chambers 2600 may be provided on the upper layer, respectively, on one side and the other side of the transfer chamber 2400. The first group of process chambers 2600 and the second group of process chambers 2600 can be classified according to the type of the chemical used and the type of the cleaning method.

In the following embodiments, an apparatus for cleaning a substrate W using processing fluids such as high-temperature sulfuric acid, an alkaline chemical liquid, an acidic chemical liquid, a rinsing liquid, and a drying gas is described as an example. However, the technical idea of the present invention is not limited to this, and can be applied to various types of apparatuses that perform a process while rotating the substrate W, such as an etching process.

Fig. 3 is a cross-sectional view of the substrate processing apparatus of Fig. 2, Figs. 4 and 5 are cross-sectional views showing a support unit of the substrate processing apparatus of Fig. 2, and Fig. 6 is a plan view of the substrate processing apparatus.

 3 to 6, the substrate processing apparatus 10 includes a chamber 800, a processing vessel 100, a support unit 200, a processing liquid supply unit 300, a process exhaust unit 500, (600).

The chamber 800 provides a closed interior space. And an airflow supply unit 810 is installed in the upper part. The airflow supply unit 810 forms a downward flow inside the chamber 800.

The airflow supply unit 810 filters and supplies the high-humidity outside air into the chamber. The high-humidity outside air passes through the airflow supply unit 810 and is supplied into the chamber to form a downward flow. The downward airflow provides a uniform airflow to the upper part of the substrate W and allows the contaminants generated during the processing of the surface of the substrate W by the processing fluid to flow together with the air into the collection tubes 110, To the process exhaust unit 500 through the exhaust pipe 500.

The chamber 800 is divided into a process area 816 and a maintenance area 818 by a horizontal partition 814. In the processing region 816, the processing vessel 100 and the supporting unit 200 are located. In the maintenance area 818, a driving unit of the elevation unit 600, a driving unit connected to the processing liquid supply unit 300, a driving unit connected to the supply line 100, And so on. The maintenance area 818 is isolated from the process area 816.

The processing vessel 100 has a cylindrical shape with an open top, and provides a processing space for processing the substrate W. [ The open upper surface of the processing vessel 100 is provided as a take-out and carry-in passage of the substrate W. [ The support unit 200 is located in the process space. The support unit 200 rotates the substrate W while supporting the substrate W in the course of the process.

The processing vessel 100 provides a lower space in which the exhaust duct 190 is connected to the lower end thereof so that forced exhaust is performed. The first to third collection tubes 110, 120, and 130 for introducing and sucking the processing solution and the gas to be scattered on the substrate W to be rotated are disposed in the processing vessel 100 in multiple stages.

The annular first to third collecting tubes (110, 120, 130) have exhaust ports (H) communicating with one common annular space.

Specifically, the first to third collection tubes 110, 120, and 130 each include a bottom surface having an annular ring shape and a side wall having a cylindrical shape extending from the bottom surface. The second recovery tank (120) surrounds the first recovery tank (110) and is located apart from the first collection tank (110). The third water collection tube (130) surrounds the second water collection tube (120) and is located apart from the second collection tube (120).

The first to third collection tubes 110, 120 and 130 provide the first to third collection spaces RS1, RS2 and RS3 through which the air flow containing the processing solution and the fumes scattered from the substrate W flows . The first collection space RS1 is defined by the first collection container 110 and the second collection space RS2 is defined by a space between the first collection container 110 and the second collection container 120 And the third collection space RS3 is defined by the spacing space between the second collection container 120 and the third collection container 130. [

Each of the upper surfaces of the first to third collecting tubes (110, 120, 130) is opened at the center. The first to third collecting tubes 110, 120, and 130 are inclined surfaces that gradually increase from the connected side wall to the corresponding bottom surface. The processing liquid scattered from the substrate W flows into the recovery spaces RS1, RS2 and RS3 along the upper surfaces of the first to third collection tubes 110, 120 and 130.

The first treatment liquid flowing into the first collection space RS1 is discharged to the outside through the first collection line 141. [ The second process liquid that has flowed into the second recovery space RS2 is discharged to the outside through the second recovery line 143. The third treatment liquid flowing into the third water collection space RS3 is discharged to the outside through the third collection line 145. [

The process liquid supply unit 300 supplies the process liquid to the substrate. The treatment liquid includes a first treatment liquid and a second treatment liquid. The first treatment liquid may be a chemical of the first temperature. The first temperature may be 150-170 < 0 > C. The first treatment liquid may be phosphoric acid at a high temperature. Alternatively, for example, the first treatment liquid may be sulfuric acid, phosphoric acid, or a mixture of sulfuric acid and phosphoric acid. The second treatment liquid may be a rinse liquid at the second temperature. The second temperature is lower than the first temperature. The second temperature may be room temperature. The second treatment liquid may be pure water at room temperature (DIW).

The treatment liquid nozzle member 310 includes a nozzle 311, a nozzle arm 313, a support rod 315, and a nozzle driver 317. The nozzle 311 is supplied with the first processing solution or the second processing solution through the supplying part 320. The nozzle 311 discharges the process liquid onto the surface of the substrate W. [ The nozzle arm 313 is provided with a long length in one direction, and the nozzle 311 is mounted on the tip thereof. The nozzle arm 313 supports the nozzle 311. At the rear end of the nozzle arm 313, a support rod 315 is mounted. The support rod 315 is positioned below the nozzle arm 313. The support rod 315 is disposed perpendicularly to the nozzle arm 313. The nozzle driver 317 is provided at the lower end of the support rod 315. The nozzle driver 317 rotates the support rod 315 about the longitudinal axis of the support rod 315. The nozzle arm 313 and the nozzle 311 swing about the support rod 315 by the rotation of the support rod 315. The nozzle 311 can swing between the outer side and the inner side of the processing container 100. [ Then, the nozzle 311 swings the section between the center of the substrate W and the edge region, and can discharge the processing liquid.

The process exhaust unit 500 is responsible for exhausting the inside of the process container 100. For example, the process exhaust unit 500 is for providing the exhaust pressure (suction pressure) to the recovery tank for recovering the process liquid in the first to third recovery tanks 110, 120, and 130 in the process. The process exhaust unit 500 includes an exhaust line 510 connected to the exhaust duct 190, and a damper 520. The exhaust line 510 is supplied with an exhaust pressure from an exhaust pump (not shown) and is connected to the main exhaust line embedded in the bottom space of the semiconductor production line.

On the other hand, the processing vessel 100 is combined with the elevation unit 600 that changes the vertical position of the processing vessel 100. The elevating unit 600 moves the processing vessel 100 linearly in the vertical direction. The relative height of the processing vessel 100 to the support unit 200 is changed as the processing vessel 100 is moved up and down.

The elevating unit 600 includes a bracket 612, a moving shaft 614, and a driver 616. The bracket 612 is fixed to the outer wall of the processing vessel 100. A moving shaft 614, which is moved vertically by a driver 616, is fixedly coupled to the bracket 612. The processing vessel 100 is lowered so that the chuck stage 210 protrudes to the upper portion of the processing vessel 100 when the substrate W is loaded into the chuck stage 210 or unloaded from the chuck stage 210. The height of the processing vessel 100 is adjusted so that the processing solution can flow into the predetermined collection bins 110, 120 and 130 according to the type of the processing solution supplied to the substrate W . The relative vertical position between the processing container 100 and the substrate W is changed. The processing vessel 100 may have different types of processing liquids and polluting gases recovered for each of the recovery spaces RS1, RS2, and RS3. According to one embodiment, the elevating unit 600 vertically moves the processing vessel 100 to change the relative vertical position between the processing vessel 100 and the supporting unit 200.

The support unit 200 includes a chuck stage 210, a support plate 220, a rotation unit 230, a heater 280, a chuck pin driver (not shown), a support pin driver (not shown) and a controller 700. The supporting unit 200 supports the substrate W during the process and can be rotated by the driving unit 240 during the process.

The chuck stage 210 has a circular upper surface. The chuck stage 210 is coupled to the rotation unit 230 and rotated. Chuck pins (212) are installed at the edges of the chuck stage (210). The chuck pins 212 are provided to protrude above the support plate 220 through the support plate 220. The chuck pins 212 align the substrate W such that the substrate W supported by the plurality of support pins 224 is in place. During processing, the chuck pins (212) support the side of the substrate (W). The chuck pins 212 contact the sides of the substrate to prevent the substrate W from being displaced from the correct position.

8 to 10 are views showing various embodiments and modifications of the chuck pin. And the broken line indicates the substrate positioned at the first height or the second height. 8-10, the chuck pin 212 may include a body 218 and a support 214. The body 218 is provided with its longitudinal direction up and down. The body 218 is provided protruding from the upper surface of the support plate 220. The substrate can be spaced from the support unit 200 by the height of the body 218. [ The support 214 is formed on the side of the body 218. The side of the substrate contacts the supporting portion 214 to support the side surface of the substrate. A plurality of supports 214 may be provided at different heights of the body 218. For example, the support portion 214 may include a first support portion 214a and a second support portion 214b. The first support portion 214a is formed at a first height from the support plate 220. [ For example, the first height may be 10 mm or less from the support plate 220.

The second support portion 214b is formed at a second height from the support plate 220. [ The second height is higher than the first height. For example, the second height may be 10 to 20 mm from the support plate 220. Accordingly, when the side surface of the substrate is supported by the first supporting portion 214a, the substrate is in a relatively low position from the supporting unit 200. [ When the side surface of the substrate is supported by the second supporting portion 214b, the substrate is positioned at a relatively high position from the supporting unit 200.

As shown in FIGS. 8 and 10, the support portion 214 may be provided with concave grooves 216a and 216c on the outside of the body 218. As shown in FIG. The side surface of the substrate can be held in contact with the grooves 216a and 216c. 9, the support portion 214 may be provided as a protrusion 216b that extends from the body 218 and protrudes inwardly of the support plate 220. As shown in Fig. The side surface of the substrate can be held in contact with the projection. In the drawings of the present invention, for convenience, the support portion is shown as being provided in the shape of a recessed groove 216a. However, the present invention is not limited to this, and any shape may be used as long as it can support the side surface of the substrate.

A chuck pin driver (not shown) moves the chuck pin 212 in the horizontal direction. When the substrate is loaded into, unloaded from, or unloaded from the support unit 200, the chuck pin 212 moves to a spaced position where the support 214 can be spaced apart from the side of the substrate. Thus, the substrate can be smoothly moved. In addition, when it is necessary to chuck for the process of processing the substrate, the chuck pin 212 moves to the contact position so that the support portion 214 can be chucked in contact with the side surface of the substrate. This will be described in detail later with respect to the method of processing the substrate.

The support plate 220 is located above the chuck stage 210. A support plate 220 is provided to protect the heating member 250. The support plate 220 may be provided transparently. The support plate 220 may be rotated together with the chuck stage 210. The support plate 220 includes support pins 224. On the upper surface of the support plate 220, a support pin 224 is provided. The support pins 224 may be plural. The support pins 224 are spaced apart from the upper surface of the support plate 220 by a predetermined distance. The support pins 224 are provided so as to protrude upward from the support plate 220. The support pins 224 support the bottom surface of the substrate W. [ The support pins 224 allow the substrate W to be supported while being spaced apart from the support plate 220 in the upward direction.

Fig. 7 shows an example of the support pin 224. Fig. The support pin 224 is provided so as to be movable up and down. A plurality of support pins 224 may be provided. For example, referring to FIG. 7, three support pins 224 may be provided. The support pins 244 are connected to one plate 225 and the plate 225 can be connected to the drive shaft 226 again. The support pin 224 can also be raised or lowered depending on the rise or fall of the drive shaft 226. [ However, the present invention is not limited to this, and any structure may be used as long as it can move the support pin 224 up and down.

The support pin driver (not shown) moves the support pin 224 up and down. The support pin driver (not shown) moves the drive shaft 226 connected to the support pin 224 up and down. The support pin 224 can be raised and lowered so that the upper end of the support pin 224 moves between the first height and the second height. When the support pin 224 is at a first height from the support plate 220, the substrate is supported at the first height by the support pins 224 at the bottom surface. Further, the side surface of the substrate is supported by the first support portion 214a of the chuck pin 212 described above. When the support pin 224 is at a second height from the support plate 220, the substrate is supported at the second height by the support pins 224 at the bottom surface. Further, the side surface of the substrate is supported by the second supporting portion 214b of the above-described chuck pin 212. [

The rotation part 230 has a hollow shape and engages with the chuck stage 210 to rotate the chuck stage 210.

The controller 700 controls a chuck pin driver (not shown) and a support pin driver (not shown). The chuck pin 212 can be moved in the horizontal direction and the support pin 224 can be moved in the vertical direction according to the process step. This will be described later in detail with reference to a description of a method of processing the substrate.

The heater 280 is installed inside the support unit 200. The heater 280 heats the substrate W during the process. The heater 280 includes a heating member 250, a reflecting member 260, a temperature control unit 270, and a heater controller 258.

The heating member 250 is installed on the upper portion of the chuck stage. A plurality of heating members 250 are provided. The heating member 250 may include an edge heater 254 and a central heater 256. The edge heater 254 is provided at the edge of the support plate 220. The center heater 256 is provided inside the support plate 220 rather than the edge heater 254.

The heating member 250 may be provided in a ring shape. The heating members 250 are provided at diameters different from each other. For example, the heating member 250 may be provided with a plurality of lamps 252 provided in a ring shape. Each of the lamps 252 includes a temperature controller 270, which can be controlled.

The heating element 250 can be subdivided into a plurality of concentric zones. In each zone there are provided lamps 252 which are capable of heating each zone individually. The ramps 252 may be provided in a ring shape concentrically arranged at different radial distances relative to the center of the chuck stage 210. Although six lamps 252 are shown in this embodiment, this is only one example and the number of lamps may be added or subtracted depending on the degree of desired temperature control. The heating member 250 may control the temperature of each individual zone to control the temperature continuously or increasingly or decreasingly along the radius of the substrate W during the process. To this end, a temperature controller 270 for individually checking the temperatures of the lamps 252 is installed on the reflecting member 260. For example, in a structure in which the lamps 252 are rotated together with the chuck stage 210, a slip ring can be used as a method of supplying power to the heating member 250.

The heater controller 258 independently controls the temperatures of the heating members 250. For example, the temperature of the edge heater 254 and the center heater 256 are independently controlled. The temperature of the edge heater 254 can be controlled to be higher than the temperature of the central heater 256. [ The heater located at the edge can be controlled to have a higher temperature sequentially than the heater located at the inner side. When the first processing solution is supplied mainly to the central region of the substrate, the temperature of the edge of the substrate is relatively lower than the central region of the substrate when processing the substrate with the first processing solution at a high temperature. Therefore, the temperature of the edge heater 254 opposed to the edge of the substrate is increased to make the temperature of the entire region of the substrate uniform.

A reflective member 260 is provided between each heating member 250 and the chuck stage 210. The reflective member 260 reflects and transfers the heat generated in the lamps 252 to the upper substrate W. [ The reflective member 260 may be supported by a nozzle body 242 installed through the central space of the rotation unit 230. The reflecting member 260 is formed to extend downward at the inner end. The reflecting member 260 is provided as a fixed type that is not rotated together with the chuck stage 210.

The reflective member 260 includes a lower reflector 261, an inner reflector 263, a main reflector 265, and an outer reflector 267. The lower reflector 261 is located between the top of the chuck stage 210 and the bottom of the lamp 252. The inner reflection plate 263 is located close to the center of the support unit 200. The inner reflector 263 is located inside the lamps 252. The inner reflection plate 263 is protruded upward from the lower reflection plate 261. The inner reflection plate 263 may be provided in a ring shape. The inner reflecting plate 263 is provided vertically from the lower reflecting plate 261. The main reflector 265 protrudes from the lower reflector 261, and a plurality of the main reflector 265 are provided. The main reflector 265 is positioned outward from the center of the chuck stage 210 at the inner reflector 263. The main reflector 265 is provided in a ring shape. The main reflector 265 is located between adjacent lamps 252. In one example, the main reflector 265 includes a first sidewall 265a and a second sidewall 265b. The first sidewall 265a is provided obliquely away from the adjacent ramps 252 as it goes to the top. The first sidewall 265a and the second sidewall 265b are provided symmetrically with respect to a line passing between the main reflector 265 and the inclination angle is provided equally. Alternatively, the main reflector 265 may be provided in such a manner that the width of the main reflector 265 becomes narrower toward the top. The height of the main reflector 265 and the height of the inner reflector 261 may be provided differently. The outer reflector 267 is located outside the lamps 252. The outer reflector 267 is located outward from the center of the chuck stage 210 from the main reflector 265. The height of the outer reflector 267 is lower than that of the inner reflector 261 and the main reflector 265.

The reflective member 260 may be provided as a metal surface. The surface is provided with a metal material with good heat reflectivity. For example, the surface may be provided in gold, silver or aluminum. Alternatively, it may be made of a metal material having good heat reflectance.

The reflective member 260 may provide a main reflector 265 between the heating members 250 to control the direction in which the heat is reflected to provide more heat to the substrate W. [ Further, the main reflector 265 is provided to reduce the amount of thermal deformation of the lower reflector 261.

The reflection member 260 may be provided with cooling fins (not shown) for heat dissipation. The cooling gas may flow through the bottom surface of the lower reflector 261 to suppress heat generation of the reflective member 260. [ For example, the nozzle body 242 has a jet port 248 for jetting cooling gas to the bottom surface of the lower reflector 261 toward the direction in which the temperature control units 270 are disposed.

The temperature control units 270 are installed in a line on a straight line of the reflective member 260 to measure the temperature of each of the IR lamps 252.

The temperature control unit 270 includes a base plate 272 and a temperature sensor element 273. The temperature control unit 270 having the above structure is positioned adjacent to the heating member 250 for accurate temperature measurement of the heating member 250. A thin type temperature control unit 270 may be mounted on the reflective member 260 to perform measurement and temperature control.

The support plate 272 is formed by extending to one side of the fixing block in the form of a silm. The support plate 272 is spaced apart from the upper surface of the lower reflector 261 and the lower reflector 261 is formed with a through hole 269 at a portion facing the support plate 272. The cooling gas flowing through the bottom of the bottom 261 can cool the temperature control unit 270 through the through holes 269. [

12 to 20 are views sequentially illustrating a process of processing a substrate. Hereinafter, a method of processing a substrate using the above-described substrate processing apparatus will be described.

The substrate is loaded into the support unit 200 by a transfer robot (not shown) for processing the substrate. At this time, the chuck pin 212 is horizontally moved to the outside of the support plate 220. That is, when the substrate is loaded, the side surface of the substrate is moved to a spaced apart position away from the support portion 214 of the chuck pin 212. And the support pin 224 is positioned at the second height. When the substrate is loaded, the bottom surface of the substrate is supported by the support pins 224. The support pins 224 are lowered from the support plate 220 to the first height. Then, the chuck pin 212 is horizontally moved to the inside of the support plate 220. The support portion 214 is moved to the contact position of the chuck pin 212 so as to be in contact with the side surface of the substrate to chuck the substrate. And thereafter a first processing step of processing the substrate by supplying the first processing liquid from the nozzle 311 of the processing liquid supply unit 300 is performed. The first treatment liquid may be phosphoric acid at 150 to 170 占 폚. When the first processing step is completed, the chuck pin 212 is moved to a spaced apart position outside the support plate 220 so that the support portion 214 is spaced from the side surface of the substrate. Thereafter, the support pin 224 is lifted to the second height from the support plate 220. Then, the chuck pin 212 is moved to a contact position inside the support plate 220 so that the support portion 214 is brought into contact with the side surface of the substrate, thereby chucking the substrate. And then a second processing step of processing the substrate by supplying the second processing liquid from the nozzle 311 of the processing liquid supply unit 300 is performed. The second treatment liquid may be a rinse liquid at room temperature. When the second step is completed, the chucking pins are moved to a spaced apart position outside the support plate 220 to unload the substrate. That is, the support portion 214 is spaced from the side surface of the substrate. Thereafter, the substrate can be unloaded from the supporting unit 200 by the transfer robot or the like.

In the embodiment described above, the second processing step of processing the substrate with the second processing liquid is performed after the first processing step of processing the substrate with the first processing solution, but the order of the front and rear can be changed. Or any one of the processing steps may be omitted.

Although the above embodiment has been described including the loading and unloading steps of the substrate, it may be omitted.

In the above-described embodiment, the first processing step and the second processing step are performed for one substrate, but the substrate processing can be performed for each of the plurality of substrates. For example, referring to FIGS. 21 and 22, it is possible to process a substrate with a first process liquid on a first substrate W1 and process a substrate with a second process liquid on a second substrate W2 . As shown in Fig. 21, the first substrate W1 can be processed at a first height. Thereafter, the first substrate W1 may be unloaded and the second substrate W2 may be carried. As shown in Fig. 22, the second substrate W2 can be processed with the second process liquid on the second substrate W2. At this time, the second substrate W2 can be processed at the second height.

Although the support pin is provided in the above-described embodiment, the support pin may be omitted. For example, gas pressure can be used to support the bottom surface of the substrate.

In the above-described embodiment, at least two support portions are provided, but one support portion may be provided. At this time, the height of the body may correspond to the first height. Therefore, when performing the first processing step using the first processing solution, the temperature of the entire region of the substrate can be uniformly maintained.

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

10: substrate processing apparatus 100: processing vessel
200: support unit 212:
214: support portion 224: support pin
250: heating element 700: controller

Claims (28)

An apparatus for processing a substrate,
A processing vessel having an open top;
A support unit provided in the processing vessel and supporting the substrate; And
And a treatment liquid supply unit for supplying the first treatment liquid or the second treatment liquid to the substrate placed on the support unit,
The support unit includes:
A support plate;
And a chuck having a support provided on the support plate for supporting a side surface of the substrate.
Wherein a plurality of support portions are provided to support the substrate at different heights from the support plate.
The method according to claim 1,
Wherein the support portion includes a first support portion provided at a first height from the support plate and a second support portion provided at a second height higher than the first height.
3. The method of claim 2,
Wherein the chuck pin includes a body provided with its longitudinal direction up and down, and the support part is provided with a concave groove outside the body.
3. The method of claim 2,
Wherein the chuck pin includes a body provided with its longitudinal direction up and down, and the support part is provided as a protruding part protruding from the body in an inward direction of the support plate.
3. The method of claim 2,
The support unit includes:
A support pin for supporting a bottom surface of the substrate; And
And a support pin driver for moving the support pin up and down.
6. The method of claim 5,
Wherein the support unit further comprises a controller for controlling the support pin driver,
In the first processing step of processing the substrate with the first processing solution, the side surface of the substrate is supported by the first supporting part,
And controls the support pin driver such that a side surface of the substrate is supported by the second support portion in a second processing step of processing the substrate with the second processing solution.
The method according to claim 6,
Wherein the support unit further comprises a chuck pin driver for moving the chuck pin horizontally,
Wherein the controller controls the chuck pin driver,
Wherein when the first processing step is completed, the position of the chuck pin is moved to a position spaced apart from the side surface of the substrate by the support part, the support pin is moved from the first height to the second height, And moves the chuck pin to a contact position in contact with the side surface of the substrate at the spaced apart position.
6. The method of claim 5,
Wherein the support unit further comprises a controller for controlling the support pin driver,
The controller comprising:
When the first substrate is processed with the first processing solution, the side surface of the first substrate is supported by the first supporting portion,
And controls the support pin driver such that a side surface of the second substrate is supported by the second support portion when processing the second substrate with the second processing solution.
9. The method according to any one of claims 1 to 8,
Wherein the first processing liquid is at a first temperature and the second processing liquid is at a second temperature lower than the first temperature.
10. The method of claim 9,
Wherein the first processing solution is phosphoric acid.
11. The method of claim 10,
Wherein the second processing liquid is pure water.
10. The method of claim 9,
Wherein the supporting unit further comprises a heating member for heating the substrate,
Wherein the heating member includes an edge heater provided at an edge of the support plate.
13. The method of claim 12,
Wherein the heating member comprises a central heater provided inside the support plate rather than the edge heater; And
And a heater controller for controlling the heating member,
Wherein the heater controller independently controls the temperatures of the edge heater and the center heater.
14. The method of claim 13,
Wherein the heater controller controls the temperature of the edge heater to be higher than the temperature of the center heater.
A support unit having a support plate for supporting a substrate,
And a chuck having a support provided on an upper surface of the support plate and supporting a side surface of the substrate.
Wherein the support portion is provided with a plurality of support portions for supporting the substrate at different heights.
16. The method of claim 15,
Wherein the support portion includes a first support portion provided at a first height and a second support portion provided at a second height higher than the first height.
17. The method of claim 16,
The support unit includes:
A support pin for supporting a bottom surface of the substrate; And
And a support pin driver for moving the support pin up and down between the first height and the second height.
18. The method according to any one of claims 15 to 17,
Further comprising a heating member for heating the substrate,
Wherein the heating member includes an edge heater provided at an edge of the support plate.
19. The method of claim 18,
The heating member being provided inside the support unit rather than the edge heater; And
And a heater controller for controlling the heating member,
Wherein the heater controller independently controls the temperatures of the edge heater and the center heater.
A method of processing a substrate,
Processing the substrate in a support unit having a support plate,
In the first processing step of processing the substrate with the first processing solution, the substrate is processed by supplying the first processing solution while maintaining the first height from the supporting plate,
A substrate processing method for processing the substrate by supplying the second processing solution in a state where the substrate is held at a second height higher than the first height from the supporting plate in a second processing step of processing the substrate with the second processing solution .
A method of processing a substrate,
Processing the substrate in a support unit having a support plate,
When the first substrate is treated with the first treatment liquid, the first substrate is treated with the first substrate being spaced apart from the support plate by a first height,
And when the second substrate is treated with the second treatment liquid, the second substrate is treated with the second substrate spaced apart from the support plate by a second height lower than the first height.
22. The method according to claim 20 or 21,
Wherein the edge of the substrate is heated to a higher temperature than the inside of the substrate.
23. The method of claim 22,
Wherein the first treatment liquid is phosphoric acid.
24. The method of claim 23,
Wherein the second treatment liquid is pure water.
25. The method of claim 24,
Treating the substrate while heating the substrate at the bottom,
Wherein the temperature of the first treatment liquid is a first temperature and the temperature of the second treatment liquid is a second temperature lower than the first temperature.
A method for processing a substrate using the substrate processing apparatus according to claim 5, wherein a side of the substrate is supported by the first support portion in a first processing step of processing the substrate with the first processing solution, Wherein a side surface of the substrate is supported by the second supporting portion in a second processing step of processing the substrate with the second supporting portion.
27. The method of claim 26,
Wherein when the first processing step is completed, the position of the chuck pin is moved to a position spaced apart from the side surface of the substrate by the support part, the support pin is moved from the first height to the second height, And moving the chuck pin to a contact position that contacts the side surface of the substrate at the spaced apart position. A method of processing a substrate using the substrate processing apparatus of claim 5,
When the first substrate is processed with the first processing solution, the side surface of the first substrate is supported by the first supporting portion, and when the second substrate is processed with the second processing solution, And is supported by the second support portion.

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