KR20230029522A - 웨이퍼 및 웨이퍼의 제조 방법 - Google Patents

웨이퍼 및 웨이퍼의 제조 방법 Download PDF

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Publication number
KR20230029522A
KR20230029522A KR1020220099076A KR20220099076A KR20230029522A KR 20230029522 A KR20230029522 A KR 20230029522A KR 1020220099076 A KR1020220099076 A KR 1020220099076A KR 20220099076 A KR20220099076 A KR 20220099076A KR 20230029522 A KR20230029522 A KR 20230029522A
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conductive bumps
region
area
density
layer
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English (en)
Korean (ko)
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겐고 야마모토
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신꼬오덴기 고교 가부시키가이샤
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Publication of KR20230029522A publication Critical patent/KR20230029522A/ko
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  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
KR1020220099076A 2021-08-23 2022-08-09 웨이퍼 및 웨이퍼의 제조 방법 Pending KR20230029522A (ko)

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JP2000100851A (ja) * 1998-09-25 2000-04-07 Sony Corp 半導体部品及びその製造方法、半導体部品の実装構造及びその実装方法
JP2003168700A (ja) 2001-09-18 2003-06-13 Seiko Epson Corp 半導体ウエハ、半導体装置及びその製造方法、回路基板並びに電子機器
JP4292041B2 (ja) 2003-09-12 2009-07-08 カシオ計算機株式会社 半導体基板、半導体基板の製造方法および半導体装置の製造方法
JP4452217B2 (ja) 2005-07-04 2010-04-21 富士通マイクロエレクトロニクス株式会社 半導体装置
US9911709B1 (en) * 2016-10-26 2018-03-06 Advanced Semiconductor Engineering, Inc. Semiconductor device and semiconductor manufacturing process
US9905527B1 (en) * 2016-12-15 2018-02-27 Micron Technology, Inc. Uniform electrochemical plating of metal onto arrays of pillars having different lateral densities and related technology
US11469198B2 (en) * 2018-07-16 2022-10-11 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device manufacturing method and associated semiconductor die
KR102879035B1 (ko) * 2020-07-10 2025-10-29 삼성전자주식회사 반도체 패키지

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EP4618264A1 (en) 2023-03-06 2025-09-17 LG Energy Solution, Ltd. Pressure member and pouch cell comprising same

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