KR20230023831A - Composition for forming release layer, and release layer - Google Patents

Abstract

A composition for forming a release layer containing a polyamic acid obtained by introducing an anchor group into one or both of the polymer chain terminals and an organic solvent is provided.

Description

Composition for forming release layer and release layer {COMPOSITION FOR FORMING RELEASE LAYER, AND RELEASE LAYER}

The present invention relates to a composition for forming a release layer and a release layer.

BACKGROUND OF THE INVENTION [0002] In recent years, electronic devices have been required to have properties such as imparting a bending function and reducing thickness and weight. In this respect, it is required to use a lightweight flexible plastic substrate instead of the conventional glass substrate which is heavy and brittle and cannot be bent. Also, in a new generation display, development of an active full-color TFT display panel using a lightweight flexible plastic substrate is required.

Therefore, various manufacturing methods of electronic devices using resin films as substrates have begun to be examined, and manufacturing studies are progressing with processes that can divert existing TFT facilities in new generation displays. Patent Documents 1, 2 and 3 form an amorphous silicon thin film layer on a glass substrate, form a plastic substrate on the thin film layer, then irradiate a laser from the glass surface side, Disclosed is a method of peeling a plastic substrate from a glass substrate.

In addition, Patent Document 4 discloses a method of completing a liquid crystal display device by attaching a layer to be peeled (referred to as "transferred layer" in Patent Document 4) to a plastic film using the technology disclosed in Patent Documents 1 to 3. .

However, in the method disclosed in Patent Documents 1 to 4, particularly the method disclosed in Patent Document 4, it is essential to use a substrate having high light transmittance, and to pass through the substrate and to impart sufficient energy to release hydrogen contained in amorphous silicon. For this purpose, irradiation with a laser beam of relatively high energy is required, and there is a problem that the layer to be separated is damaged. In addition, since laser processing requires a long time and it is difficult to peel a layer to be separated having a large area, there is also a problem that it is difficult to increase the productivity of device fabrication.

Japanese Unexamined Patent Publication No. 10-125929 Japanese Unexamined Patent Publication No. 10-125931 International Publication No. 2005/050754 Japanese Unexamined Patent Publication No. 10-125930

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a composition for forming a release layer for forming a release layer that can be separated without damaging a resin substrate of a flexible electronic device, and the release layer.

As a result of repeated intensive studies to solve the above problems, the inventors of the present invention found that, from a composition containing a polyamic acid formed by introducing an anchor group into either or both of the polymer chain terminals and an organic solvent, excellent adhesion to the substrate and flexibility It was discovered that a peeling layer having appropriate adhesiveness and appropriate peelability to a resin substrate used in an electronic device could be formed, and the present invention was completed.

That is, the present invention

1. A composition for forming a release layer containing a polyamic acid obtained by introducing anchor groups into one or both of the polymer chain terminals and an organic solvent;

2. The composition for forming a release layer of 1, wherein the anchor group is a silyl group or a carboxylic acid group;

3. The composition for forming a release layer of 1 or 2, characterized in that the polyamic acid is a polyamic acid obtained by reacting a diamine component containing an aromatic diamine with an acid dianhydride component containing an aromatic tetracarboxylic dianhydride;

4. The composition for forming a release layer of 3, wherein the aromatic diamine is an aromatic diamine containing 1 to 5 benzene nuclei,

5. The composition for forming a release layer of 3 or 4, characterized in that the aromatic tetracarboxylic dianhydride is an aromatic tetracarboxylic dianhydride containing 1 to 5 benzene nuclei;

6. A release layer formed using the composition for forming a release layer according to any one of 1 to 5;

7. A method of manufacturing a flexible electronic device having a resin substrate characterized by using the peeling layer of 6;

8. The manufacturing method of 7, characterized in that the resin substrate is a substrate made of polyimide.

provides

By using the composition for forming a release layer of the present invention, a release layer having excellent adhesion to a substrate, appropriate adhesion to a resin substrate, and appropriate release property can be obtained with good reproducibility. Therefore, by using the composition for forming a release layer of the present invention, in the manufacturing process of a flexible electronic device, the resin substrate formed on the substrate or the circuit further provided thereon is not damaged, and the circuit and the like are not damaged. It becomes possible to separate the substrate from the gas. Therefore, the composition for forming a release layer of the present invention can contribute to simplification of the manufacturing process of a flexible electronic device having a resin substrate or an improvement in its yield.

Hereinafter, the present invention will be described in more detail.

The composition for forming a release layer of the present invention contains a polyamic acid formed by introducing an anchor group into one or both of its polymer chain terminals, and an organic solvent. Here, the peeling layer in the present invention is a layer provided directly on the glass substrate for a predetermined purpose, and a typical example thereof is a resin substrate of a flexible electronic device made of a substrate and a resin such as polyimide in a manufacturing process of a flexible electronic device It is installed to fix the resin substrate during a predetermined process, and after forming an electronic circuit or the like on the resin substrate, the resin substrate can be easily separated from the substrate. A peeling layer is mentioned.

The polyamic acid used in the present invention is not particularly limited as long as it has an anchor group at the end of the polymer chain, but the polyamic acid obtained by reacting the diamine component and the tetracarboxylic dianhydride component, and an amine having an anchor group or having an anchor group It can be obtained by reacting an acid anhydride. That is, the polyamic acid obtained here is one in which one or both of molecular chain terminals are sealed with an anchor group-containing compound described later.

Examples of such an anchor group include a carboxylic acid group, a silyl group (eg, an alkylsilyl group, an alkoxysilyl group, a vinylsilyl group, an allylsilyl group, etc.), a vinyl group, a maleimide group, a phenolic hydroxyl group, and the like. A carboxylic acid group and a silyl group (especially a silyl group in which one or more groups selected from alkoxy groups, vinyl groups and allyl groups are bonded to silicon atoms) are preferred. By using such an anchor group, a difference occurs between the flexible substrate used for the upper layer and the skeleton, so that the function of the obtained film as a release layer can be improved.

In this invention, although an anchor group should just exist on either side of the polymer chain terminal of a polyamic acid, it is preferable that an anchor group exists on both sides of a polymer chain terminal.

In addition, between the polyamic acid obtained from the diamine component and the tetracarboxylic dianhydride component, and the anchor group, a spacer group such as an alkyl group having about 1 to 10 carbon atoms and a carbon number that does not significantly reduce the peelability or heat resistance may be present, such as an aryl group, An ether bond, a thioether bond, an ester bond, or the like may exist in these spacer groups.

Specific examples of the amine having an anchor group include 4-aminophenoxytrimethylsilane, 4-aminophenoxydimethylvinylsilane, 4-aminophenoxymethyldivinylsilane, 4-aminophenoxytrivinylsilane, and 4-aminophenoxymethylvinylsilane. -Aminophenoxydimethylallylsilane, 4-aminophenoxymethyldiallylsilane, 4-aminophenoxytriallylsilane, 4-aminophenoxydimethylphenylsilane, 4-aminophenoxymethyldiphenylsilane Phosphorus, 4-aminophenoxytriphenylsilane, 4-aminophenoxytrimethoxysilane, 4-aminophenoxydimethoxyvinylsilane, 4-aminophenoxymethoxydivinylsilane, 4-amino Phenoxytrivinylsilane, 4-aminophenoxydimethoxyallylsilane, 4-aminophenoxymethoxydiallylsilane, 4-aminophenoxydimethoxyphenylsilane, 4-aminophenoxymethoxy Diphenylsilane, 4-aminophenoxytriethoxysilane, 4-aminophenoxydiethoxyvinylsilane, 4-aminophenoxyethoxydivinylsilane, 4-aminophenoxytrivinylsilane, 4 -Aminophenoxydiethoxyallylsilane, 4-aminophenoxyethoxydiallylsilane, 4-aminophenoxydiethoxyphenylsilane, 4-aminophenoxyethoxydiphenylsilane, 3-aminophenoxy Trimethylsilane, 3-aminophenoxydimethylvinylsilane, 3-aminophenoxymethyldivinylsilane, 2-aminophenoxytrivinylsilane, 2-aminophenoxytrimethylsilane, 2-amino Phenoxydimethylvinylsilane, 2-aminophenoxymethyldivinylsilane, 2-aminophenoxytrivinylsilane, 3-aminopropyltriethylsilane, 3-aminopropyltrimethoxysilane, 3- Aminopropyltriethoxysilane, 2-aminopropyltrimethoxysilane, 2-aminopropyltriethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, N-( 2-aminoethyl)-3-aminopropylmethyldimethoxysilane, N-ethoxycarbonyl-3-aminopropyltrimethoxysilane, N-ethoxycarbonyl-3-aminopropyltriethoxysilane , N-triethoxysilylpropyltriethylenetriamine, N-trimethoxysilylpropyltriethylenetriamine, 2-aminophenol, 3-aminophenol, 4-aminophenol, etc., but is not limited thereto. .

Specific examples of the acid anhydride having an anchor group include trimellitic anhydride, vinylmaleic anhydride, 4-vinylnaphthalene-1,2-dicarboxylic acid anhydride, maleic anhydride, 2,3-dimethylmaleic anhydride, and 4-hydroxyphthalic acid. Anhydride, 3-hydroxyphthalic anhydride, etc. are mentioned, but it is not limited to these.

Further, as the diamine component and acid dianhydride component used when producing the polyamic acid, from the viewpoint of improving the function as a release layer of the resulting film, a diamine component containing an aromatic diamine and an acid dianhydride component containing an aromatic tetracarboxylic dianhydride. A polyamic acid obtained by reacting is preferred.

Although it is not specifically limited as long as it has two amino groups in a molecule|numerator and has an aromatic ring as an aromatic diamine, Aromatic diamine containing 1-5 benzene nuclei is preferable.

Specific examples thereof include 1,4-diaminobenzene (p-phenylenediamine), 1,3-diaminobenzene (m-phenylenediamine), and 1,2-diaminobenzene (o-phenylenediamine). , 2,4-diaminotoluene, 2,5-diaminotoluene, 2,6-diaminotoluene, 4,6-dimethyl-m-phenylenediamine, 2,5-dimethyl-p-phenylene Diamine, 2,6-dimethyl-p-phenylenediamine, 2,4,6-trimethyl-1,3-phenylenediamine, 2,3,5,6-tetramethyl-p-phenylene Diamine, m-xylylenediamine, p-xylylenediamine, 5-trifluoromethylbenzene-1,3-diamine, 5-trifluoromethylbenzene-1,2-diamine, 3,5 -Diamine having one benzene nucleus, such as bis(trifluoromethyl)benzene-1,2-diamine; 1,2-naphthalenediamine, 1,3-naphthalenediamine, 1,4-naphthalenediamine, 1,5-naphthalenediamine, 1,6-naphthalenediamine, 1,7-naphthalenediamine, 1, 8-naphthalenediamine, 2,3-naphthalenediamine, 2,6-naphthalenediamine, 4,4'-biphenyldiamine, 2,2'-bis(trifluoromethyl)-4,4'- Diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 3,3'-dicarboxy-4,4'-diaminodiphenylmethane, 3,3', 5,5'-tetramethyl-4,4'-diaminodiphenylmethane, 4,4'-diaminobenzanilide, 3,3'-dichlorobenzidine, 3,3'-dimethylbenzidine, 2 ,2'-dimethylbenzidine, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 2,2-bis( 3-aminophenyl)propane, 2,2-bis(4-aminophenyl)propane, 2,2-bis(3-aminophenyl)-1,1,1,3,3,3-hexafluoropropane Pain, 2,2-bis (4-aminophenyl) -1,1,1,3,3,3-hexafluoropropane, 3,3'-diaminodiphenylsulfoxide, 3,4'-di Aminodiphenylsulfoxide, 4,4'-diaminodiphenylsulfoxide, 3,3'-bis(trifluoromethyl)biphenyl-4,4'-diamine, 3,3',5,5' -Tetrafluorobiphenyl-4,4'-diamine, 4,4'-diaminooctafluorobiphenyl, 2-(3-aminophenyl)-5-aminobenzimidazole, 2-(4-amino diamines having two benzene nuclei such as phenyl)-5-aminobenzoxazole; 1,5-diaminoanthracene, 2,6-diaminoanthracene, 9,10-diaminoanthracene, 1,8-diaminophenanthrene, 2,7-diaminophenanthrene, 3,6-diaminophenanthrene , 9,10-diaminophenanthrene, 1,3-bis (3-aminophenyl) benzene, 1,3-bis (4-aminophenyl) benzene, 1,4-bis (3-aminophenyl) benzene, 1 ,4-bis(4-aminophenyl)benzene, 1,3-bis(3-aminophenylsulfide)benzene, 1,3-bis(4-aminophenylsulfide)benzene, 1,4-bis(4-aminophenyl) Sulfide)benzene, 1,3-bis(3-aminophenylsulfone)benzene, 1,3-bis(4-aminophenylsulfone)benzene, 1,4-bis(4-aminophenylsulfone)benzene, 1,3- Bis[2-(4-aminophenyl)isopropyl]benzene, 1,4-bis[2-(3-aminophenyl)isopropyl]benzene, 1,4-bis[2-(4-aminophenyl)isopropyl ] diamines having three benzene nuclei, such as benzene, 4,4''-diamino-p-terphenyl, and 4,4''-diamino-m-terphenyl; . These may be used alone or in combination of two or more. Also, in the present invention, it is preferable to use the aromatic diamine that does not contain an ether linkage or an ester linkage.

Among them, aromatic diamines composed only of aromatic rings and heteroaromatic rings having no substituents such as methyl groups on aromatic rings and heterocycles condensed therewith are preferred from the viewpoint of improving the function of the resulting film as a release layer. Specifically, p-phenylenediamine, m-phenylenediamine, 2-(3-aminophenyl)-5-aminobenzimidazole, 2-(4-aminophenyl)-5-aminobenzoxazole, 4 , 4''-diamino-p-terphenyl and the like are preferable.

The aromatic tetracarboxylic dianhydride is not particularly limited as long as it has two dicarboxylic acid anhydride sites in the molecule and has an aromatic ring, but an aromatic tetracarboxylic dianhydride containing 1 to 5 benzene nuclei is preferable.

Specific examples thereof include pyromellitic acid dianhydride, benzene-1,2,3,4-tetracarboxylic acid dianhydride, naphthalene-1,2,3,4-tetracarboxylic acid dianhydride, and naphthalene-1,2,5,6-tetracarboxylic acid dianhydride. Carboxylic dianhydride, naphthalene-1,2,6,7-tetracarboxylic dianhydride, naphthalene-1,2,7,8-tetracarboxylic dianhydride, naphthalene-2,3,5,6-tetracarboxylic dianhydride, naphthalene -2,3,6,7-tetracarboxylic dianhydride, naphthalene-1,4,5,8-tetracarboxylic dianhydride, biphenyl-2,2',3,3'-tetracarboxylic dianhydride, biphenyl- 2,3,3',4'-tetracarboxylic dianhydride, biphenyl-3,3',4,4'-tetracarboxylic dianhydride, anthracene-1,2,3,4-tetracarboxylic dianhydride, anthracene- 1,2,5,6-tetracarboxylic dianhydride, anthracene-1,2,6,7-tetracarboxylic dianhydride, anthracene-1,2,7,8-tetracarboxylic dianhydride, anthracene-2,3,6 ,7-tetracarboxylic dianhydride, phenanthrene-1,2,3,4-tetracarboxylic dianhydride, phenanthrene-1,2,5,6-tetracarboxylic dianhydride, phenanthrene-1,2,6,7 -Tetracarboxylic dianhydride, phenanthrene-1,2,7,8-tetracarboxylic dianhydride, phenanthrene-1,2,9,10-tetracarboxylic dianhydride, phenanthrene-2,3,5,6-tetra Carboxylic acid dianhydride, phenanthrene-2,3,6,7-tetracarboxylic acid dianhydride, phenanthrene-2,3,9,10-tetracarboxylic acid dianhydride, phenanthrene-3,4,5,6-tetracarboxylic acid dianhydride Water, phenanthrene-3,4,9,10-tetracarboxylic dianhydride, etc. are mentioned, but it is not limited to these. These may be used alone or in combination of two or more.

Among them, aromatic carboxylic acid dianhydrides having one or two benzene nuclei are preferable from the viewpoint of improving the function of the obtained film as a release layer. Specifically, an aromatic tetracarboxylic dianhydride represented by any one of formulas (C1) to (C12) is preferable, and an aromatic tetracarboxylic dianhydride represented by any one of formulas (C1) to (C7) and (C9) to (C11) Water is more preferred.

Further, from the viewpoint of improving flexibility, heat resistance, etc. of the release layer obtained, the diamine component used in the present invention may contain diamines other than aromatic diamine, and the tetracarboxylic dianhydride component used in the present invention is aromatic tetracarboxylic acid. You may also include tetracarboxylic acid dianhydride other than dianhydride.

In the present invention, the amount of aromatic diamine in the diamine component is preferably 70 mol% or more, more preferably 80 mol% or more, still more preferably 90 mol% or more, still more preferably 95 mol% or more, most preferably It is 100 mol% at most. In addition, the amount of aromatic tetracarboxylic dianhydride in the tetracarboxylic acid component is preferably 70 mol% or more, more preferably 80 mol% or more, even more preferably 90 mol% or more, still more preferably 95 mol% or more, most preferably is 100 mol%. By adopting such an amount, a film having excellent adhesion to the substrate, appropriate adhesion to the resin substrate, and appropriate peelability can be obtained with good reproducibility.

After reacting the above-described diamine component with the tetracarboxylic dianhydride component, the obtained polyamic acid is reacted with an amine having an anchor group or an acid anhydride having an anchor group, and the polymer chain terminal contained in the composition for forming a release layer of the present invention A polyamic acid having an anchor group can be obtained.

The organic solvent used in this reaction is not particularly limited as long as it does not adversely affect the reaction, and specific examples thereof include m-cresol, 2-pyrrolidone, N-methyl-2-pyrrolidone, N-ethyl- 2-pyrrolidone, N-vinyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, 3-methoxy-N,N-dimethylpropylamide, 3- Ethoxy-N,N-dimethylpropylamide, 3-propoxy-N,N-dimethylpropylamide, 3-isopropoxy-N,N-dimethylpropylamide, 3-butoxy-N,N- dimethylpropylamide, 3-sec-butoxy-N,N-dimethylpropylamide, 3-tert-butoxy-N,N-dimethylpropylamide, and γ-butyrolactone. Moreover, you may use an organic solvent individually by 1 type or in combination of 2 or more types.

Although the introduction ratio of the diamine component and the tetracarboxylic dianhydride component is determined appropriately in consideration of the target molecular weight and molecular weight distribution, the type of diamine and the type of tetracarboxylic dianhydride, etc., it cannot be uniformly defined. The diamine component is about 0.7 to 1.3, preferably about 0.8 to 1.2, more preferably about 0.9 to 1.1.

In addition, the amount of the amine having an anchor group and the acid anhydride having an anchor group is about 0.01 to 0.6, preferably about 0.05 to 0.4, more preferably about 0.1 to 0.2, or the diamine component, relative to the tetracarboxylic dianhydride component. It is about 0.01 to 0.52, preferably about 0.05 to 0.32, more preferably about 0.1 to 0.2 of the acid anhydride having an anchor group.

The reaction temperature may be appropriately set in the range from the melting point to the boiling point of the solvent used, and is usually about 0 to 100 ° C. is about 0 to 70°C, more preferably about 0 to 60°C, still more preferably about 0 to 50°C.

Since the reaction time depends on the reaction temperature and the reactivity of raw materials, it cannot be uniformly defined, but it is usually about 1 to 100 hours.

The weight average molecular weight of the polyamic acid obtained in this way is usually about 5,000 to 500,000, but is preferably about 10,000 to 200,000, more preferably about 30,000 to 150,000 from the viewpoint of improving the function of the obtained film as a release layer. In the present invention, the weight average molecular weight is a value in terms of polystyrene by gel permeation chromatography (GPC) measurement.

The composition for forming a release layer of the present invention contains an organic solvent. As this organic solvent, the thing similar to the specific example of the reaction solvent of the said reaction is mentioned. Among them, N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, 1 ,3-dimethyl-2-imidazolidinone, N-ethyl-2-pyrrolidone, and γ-butyrolactone are preferred, and N-methyl-2-pyrrolidone is more preferred.

Moreover, even if it is independent, even if it is a solvent which does not dissolve a polyamic acid, if it is a range in which a polyamic acid does not precipitate, it can be used for preparation of a composition. In particular, ethyl cellosolve, butyl cellosolve, ethyl carbitol, butyl carbitol, ethyl carbitol acetate, ethylene glycol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, 1-view Toxy-2-propanol, 1-phenoxy-2-propanol, propylene glycol monoacetate, propylene glycol diacetate, propylene glycol-1-monomethyl ether-2-acetate, propylene glycol- 1-monoethyl ether-2-acetate, dipropylene glycol, 2-(2-ethoxypropoxy)propanol, methyl lactate, ethyl lactate, n-propyl lactate, n-butyl lactate, isoamyl lactate, etc. A solvent having a low surface tension can be appropriately mixed. It is known that this improves the uniformity of the coating film at the time of application to the substrate, and can be suitably used in the present invention as well.

The method for preparing the composition for forming a release layer of the present invention is arbitrary. A preferable example of the preparation method is a method of filtering a reaction solution containing the target polyamic acid obtained by the method described above. At this time, the filtrate may be diluted or concentrated if necessary for the purpose of adjusting the concentration or the like. By employing such a method, it is possible not only to reduce the inclusion of impurities that may cause deterioration in the adhesiveness, peelability, etc. of the release layer produced from the resulting composition, but also to efficiently obtain a composition for forming a release layer. . The solvent used for dilution is not particularly limited, and specific examples thereof include the same as the specific examples of the reaction solvent in the above reaction. You may use the solvent used for dilution individually by 1 type or in combination of 2 or more types.

The concentration of the polyamic acid in the composition for forming a release layer of the present invention is appropriately set in consideration of the thickness of the release layer to be produced, the viscosity of the composition, and the like, but is usually about 1 to 30 mass%, preferably 1 to 20 mass% is about % With such a concentration, a release layer having a thickness of about 0.05 to 5 μm can be obtained with good reproducibility. The concentration of the polyamic acid can be adjusted by adjusting the amounts used of diamine and tetracarboxylic dianhydride, which are raw materials of the polyamic acid, or by adjusting the amounts when dissolving the isolated polyamic acid in a solvent.

The viscosity of the composition for forming a release layer of the present invention is appropriately set in consideration of the thickness of the release layer to be produced. In particular, when the purpose is to obtain a film having a thickness of about 0.05 μm to 5 μm with good reproducibility, it is usually 10 to 10 μm at 25 ° C. It is about 10,000 mPa·s, preferably about 20 to 5,000 mPa·s.

Here, the viscosity can be measured using a commercially available viscometer for measuring the viscosity of liquids, for example, by referring to the procedure described in JIS K7117-2, under conditions of a composition temperature of 25°C. Preferably, a conical plate type (cone plate type) rotational viscometer is used as the viscometer, and preferably a viscometer of the same type is used as a standard cone rotor and 1°34'×R24 is used to measure the composition under the condition of a temperature of 25°C. can As such a rotational viscometer, Toki Sangyo Co., Ltd. TVE-25L is mentioned, for example.

In addition to the polyamic acid and the organic solvent, the composition for forming a release layer of the present invention may also contain, for example, a crosslinking agent in order to improve film strength.

A polyimide film having excellent adhesion to a substrate, appropriate adhesion to a resin substrate, and appropriate release property by applying the composition for forming a release layer of the present invention described above to a substrate and heating the obtained coating film to thermally imidate the polyamic acid. A peeling layer made of can be obtained.

When such a release layer of the present invention is formed on a substrate, the release layer may be formed on a part of the surface of the substrate or may be formed on the entire surface. As an aspect of forming a release layer on a part of the surface of the substrate, an aspect of forming the release layer only in a predetermined range of the surface of the substrate, an aspect of forming the release layer in a pattern shape such as a dot pattern or a line and space pattern on the entire surface of the substrate, etc. there is Also, in the present invention, the substrate means that the surface is coated with the composition for forming a release layer of the present invention, and is used for manufacturing flexible electronic devices and the like.

As the substrate (base material), for example, glass, plastic (polycarbonate, polymethacrylate, polystyrene, polyester, polyolefin, epoxy, melamine, triacetyl cellulose, ABS, AS, norbornene resin, etc.), metal (silicon wafer, etc.) ), wood, paper, slate, and the like, but glass is particularly preferable since the release layer of the present invention has sufficient adhesion thereto. Also, the substrate surface may be composed of a single material or may be composed of two or more materials. As an aspect in which the surface of the aircraft is composed of two or more materials, a certain range of the surface of the aircraft is composed of a certain material and the remaining surface is composed of other materials, a pattern such as a dot pattern and a line and space pattern over the entire surface of the aircraft In terms of shape, there is an aspect in which a certain material exists among other materials.

The method of applying the composition for forming a release layer of the present invention to a substrate is not particularly limited, and examples thereof include cast coating, spin coating, blade coating, dip coating, roll coating, bar coating, and die coating. method, inkjet method, printing method (iron plate, intaglio, flat plate, screen printing, etc.) and the like.

The heating temperature for imidization is usually appropriately determined within the range of 50 to 550°C, but is preferably greater than 150°C to 510°C. By setting the heating temperature in this way, it becomes possible to sufficiently advance the imidation reaction while preventing embrittlement of the obtained film. Since the heating time differs depending on the heating temperature, it cannot be uniformly prescribed, but it is usually 5 minutes to 5 hours. In addition, the imidation ratio may be in the range of 50 to 100%.

As a preferred example of the heating mode in the present invention, a method of heating at 50 to 150 ° C. for 5 minutes to 2 hours, then raising the heating temperature step by step as it is, and finally heating at more than 150 ° C. to 510 ° C. for 30 minutes to 4 hours. can be heard In particular, as a more preferable example of the heating mode, after heating at 50 to 100 ° C. for 5 minutes to 2 hours, then over 100 ° C. to 375 ° C. for 5 minutes to 2 hours, and finally above 375 ° C. to 450 ° C. for 30 minutes to 4 hours. method can be found. Another more preferable example of the heating mode is heating at 50 to 150°C for 5 minutes to 2 hours, then over 150°C to 350°C for 5 minutes to 2 hours, then over 350°C to 450°C for 30 minutes to 4 hours, and finally As a method, a method of heating at over 450 ° C. to 510 ° C. for 30 minutes to 4 hours is exemplified.

As for the apparatus used for heating, a hot plate, an oven, etc. are mentioned, for example. The heating atmosphere may be air or an inert gas, and may be normal pressure or reduced pressure.

The thickness of the peeling layer is usually about 0.01 to 50 μm, and preferably about 0.05 to 20 μm from the viewpoint of productivity. Further, the desired thickness is realized by adjusting the thickness of the coating film before heating.

The peeling layer described above has excellent adhesion to a substrate, particularly glass substrate, appropriate adhesion to a resin substrate, and appropriate peelability. Therefore, the peeling layer of the present invention can be suitably used to peel the resin substrate of the device together with the circuit or the like formed on the resin substrate from the substrate in the manufacturing process of the flexible electronic device without damaging the resin substrate of the device. there is.

Hereinafter, an example of a method for manufacturing a flexible electronic device using the release layer of the present invention will be described.

Using the composition for forming a release layer of the present invention, a release layer is formed on a glass substrate by the method described above. By applying a resin solution for forming a resin substrate on this peeling layer and heating this coating film, a resin substrate fixed to the glass base through the peeling layer of the present invention is formed. At this time, the substrate is formed with a large area compared to the area of the release layer so as to cover the entire release layer. Examples of the resin substrate include a resin substrate made of polyimide, which is a representative resin substrate for flexible electronic devices, and examples of the resin solution for forming the substrate include a polyimide solution and a polyamic acid solution. The method for forming the resin substrate may be in accordance with a conventional method.

Next, a desired circuit is formed on the resin substrate fixed to the substrate through the release layer of the present invention, and then, for example, the resin substrate is cut along the release layer, and the resin substrate together with the circuit is separated from the release layer. Separate the resin substrate and gas. At this time, a part of the substrate may be cut together with the release layer.

Further, in Japanese Patent Laid-Open No. 2013-147599, it is reported that the laser lift-off method (LLO method), which has been used in the manufacture of high-brightness LEDs, three-dimensional semiconductor packages, etc., is applied to the manufacture of flexible displays. The LLO method is characterized in that a light ray of a specific wavelength, for example, a light ray having a wavelength of 308 nm is irradiated from the side of the glass substrate from the surface opposite to the surface on which the circuit or the like is formed. The irradiated light beam passes through the glass substrate, and only the polymer (polyimide) in the vicinity of the glass substrate absorbs this light beam and evaporates (sublimes). As a result, it becomes possible to selectively peel the resin substrate from the glass substrate without affecting the circuit installed on the resin substrate or the like that determines the performance of the display.

Since the composition for forming a release layer of the present invention has a feature of sufficiently absorbing light rays of a specific wavelength (for example, 308 nm) to which the LLO method can be applied, it can be used as a sacrificial layer for the LLO method. Therefore, when a desired circuit is formed on a resin substrate fixed to a glass substrate through a peeling layer formed using the composition of the present invention, and then LLO method is performed to irradiate a 308 nm light beam, only this peeling layer is exposed to this light beam. absorbs and evaporates (sublimes). This makes it possible to selectively peel the resin substrate from the glass base by sacrificing the peeling layer (acting as a sacrificial layer).

Example

Hereinafter, the present invention will be described in more detail with examples, but the present invention is not limited to these examples.

[1] Abbreviations of compounds

p-PDA: p-phenylenediamine

DATP: 4,4''-diamino-p-terphenyl

TFMB: 2,2'-bis(trifluoromethyl)benzidine

6FAP: 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane

PMDA: pyromellitic dianhydride

BPDA: 3,3',4,4'-biphenyltetracarboxylic acid dianhydride

LS-3280 : 4-Aminophenoxydimethylvinylsilane

LS-3150 : 3-Aminopropyltriethoxysilane

TMA: trimellitic anhydride

IHPA: isophthalaldehyde

NMP: N-methyl-2-pyrrolidone

[2] Measurement of weight average molecular weight and molecular weight distribution

Measurement of the weight average molecular weight (hereinafter abbreviated to Mw) and molecular weight distribution of the polymer was performed using a GPC apparatus manufactured by Nippon Bunko Co., Ltd. (column: OHpak SB803-HQ and OHpak SB804-HQ manufactured by Shodex; eluent: dimethylformamide/LiBr. H ₂ O (29.6 mM)/H ₃ PO ₄ (29.6 mM)/THF (0.1 wt%); flow rate: 1.0 mL/min; column temperature: 40°C; Mw: standard polystyrene equivalent).

[3] Synthesis of polymers

<Synthesis Example F1 Synthesis of polyamic acid (F1)>

20.261 g (187 mmol) of p-PDA and 12.206 g (47 mmol) of DATP were dissolved in 617.4 g of NMP. The resulting solution was cooled to 15°C, PMDA 50.112 g (230 mmol) was added thereto, and the temperature was raised to 50°C under a nitrogen atmosphere, followed by reaction for 48 hours. Mw of the obtained polymer was 82,100, and the molecular weight distribution was 2.7.

<Synthesis Example F2 Synthesis of polyamic acid (F2)>

3.218 g (30 mmol) of p-PDA was dissolved in 88.2 g of NMP. BPDA 8.581g (29mmol) was added to the obtained solution, and it was made to react at 23 degreeC for 24 hours under nitrogen atmosphere. Mw of the obtained polymer was 107,300 and molecular weight distribution 4.6.

<Synthesis Example L1 Synthesis of polyamic acid (L1)>

2.66 g (24.6 mmol) of p-PDA and 0.18 g (0.6 mmol) of TFMB were dissolved in 90 g of NMP. After adding 6.09 g (27.9 mmol) of PMDA to the obtained solution and reacting at 23 ° C. for 24 hours under a nitrogen atmosphere, 1.08 g (5.6 mmol) of LS-3280 was added and reacted for an additional 24 hours to introduce silyl groups at both ends of the polyamic acid. did. Mw of the obtained polymer was 62,700 and molecular weight distribution 2.7.

<Synthesis Example L2 Synthesis of polyamic acid (L2)>

2.96 g (27.3 mmol) of p-PDA and 0.19 g (0.6 mmol) of TFMB were dissolved in 90 g of NMP. After adding 6.34 g (29.1 mmol) of PMDA to the obtained solution and reacting at 23 ° C. for 24 hours under a nitrogen atmosphere, 0.52 g (2.3 mmol) of LS-3150 was added and further reacted for 24 hours to introduce silyl groups at both ends of the polyamic acid. did. Mw of the obtained polymer was 51,100 and molecular weight distribution 2.8.

<Synthesis Example L3 Synthesis of Polyamic Acid (L3)>

3.06 (28.3 mmol) of p-PDA was dissolved in 90 g of NMP. After adding 6.42 g (29.4 mmol) of PMDA to the obtained solution and reacting at 23 ° C. for 24 hours under a nitrogen atmosphere, 0.52 g (2.4 mmol) of LS-3150 was added and reacted for an additional 24 hours to introduce silyl groups at both ends of the polyamic acid. did. Mw of the obtained polymer was 47,800 and molecular weight distribution 2.8.

<Synthesis Example L4 Synthesis of polyamic acid (L4)>

0.78 g (7.2 mmol) of p-PDA was dissolved in 17.6 g of NMP. After adding 1.51 g (6.9 mmol) of PMDA to the obtained solution and reacting at 23 ° C. for 24 hours under a nitrogen atmosphere, 0.11 g (0.3 mmol) of TMA was added and further reacted for 24 hours. Carboxylic acid groups were introduced at both ends of the polyamic acid. The obtained polymer had Mw of 48,000 and a molecular weight distribution of 3.1.

<Comparative Synthesis Example 1 Synthesis of Polybenzoxazole Precursor (B1)>

3.18 g (0.059 mol) of 6FAP was dissolved in 70 g of NMP. 7.92 g (0.060 mol) of IHPA was added to the resulting solution and reacted at 23°C for 24 hours under a nitrogen atmosphere. Mw of the obtained polymer was 107,300 and molecular weight distribution 4.6.

[4] Preparation of a composition for forming a resin substrate

The reaction solutions obtained in Synthesis Examples F1 and F2 were used as compositions W and X for forming a resin substrate as they were, respectively.

[5] Preparation of a composition for forming a release layer

[Example 1-1]

6 g of NMP and 4 g of Butyrocellosolve were added to 10 g of the reaction solution obtained in Synthesis Example L1, and stirred at room temperature for 24 hours to obtain a composition for forming a release layer.

[Examples 1-2 to 1-3]

* A composition for forming a release layer was obtained in the same manner as in Example 1-1, except that the reaction solutions obtained in Synthesis Examples L2 to L3 were used instead of the reaction solutions obtained in Synthesis Example L1.

[Example 1-4]

9.4 g of NMP and 4.6 g of Butyrocellosolve were added to 10 g of the reaction solution obtained in Synthesis Example L4, and stirred at room temperature for 24 hours to obtain a composition for forming a release layer.

[Comparative Example 1-1]

A composition was obtained by diluting the reaction solution obtained in Comparative Synthesis Example 1 with NMP to a polymer concentration of 5 wt%.

[6] Formation of release layer and its evaluation

[Example 2-1]

The composition for forming a release layer obtained in Example 1-1 was applied onto a 100 mm x 100 mm glass substrate (the same below) as a glass substrate using a spin coater (conditions: rotation speed of 3,000 rpm for about 30 seconds).

And the obtained coating film was heated at 80°C for 10 minutes using a hot plate, then heated at 300°C for 30 minutes using an oven, the heating temperature was raised to 400°C (10°C/min), and further heated at 400°C. was heated for 30 minutes to form a release layer having a thickness of about 0.1 μm on the glass substrate. During the temperature rise, the film-attached substrate was heated in the oven without taking it out of the oven.

[Examples 2-2 to 2-4]

A release layer was formed in the same manner as in Example 2-1, except that the release layer-forming composition obtained in Examples 1-2 to 1-4 was used instead of the release layer-forming composition obtained in Example 1-1. .

[Comparative Example 2-1]

A resin thin film was formed in the same manner as in Example 2-1 except for using the composition obtained in Comparative Example 1-1 instead of the composition for forming a release layer obtained in Example 1-1.

[7] Evaluation of peelability

[Examples 3-1 to 3-4, Comparative Example 3-1]

By the following method, a substrate was prepared so as to be a combination of the release layer and the resin substrate shown in Table 1, and the release property was evaluated.

The peelability of the peeling layer obtained in Examples 2-1 to 2-4 and the glass substrate, and the peelability of the peeling layer (resin thin film) and the resin substrate were confirmed. In addition, as the resin substrate, a resin substrate made of polyimide was used.

First, crosscuts of the release layer on the glass substrate with a release layer obtained in Examples 2-1 to 2-4 (1 mm horizontally and vertically, hereinafter the same), and the crosscut of the resin substrate and the release layer on the resin substrate and the glass substrate with a release layer. 100 grid cuts were performed by skirting. That is, 100 grids of 1 mm square were formed by this crosscutting.

Then, an adhesive tape was pasted on the 100-grid cut portion, the tape was peeled off, and the degree of peeling was evaluated based on the following criteria (5B to 0B, B, A, AA) (Examples 3-1 to 3- 4). Moreover, the same test was done using the glass substrate with a resin thin film obtained by the comparative example 2-1 according to the said method (comparative example 3-1). The results are shown in Table 1.

5B: 0% peeling (no peeling)

4B: Less than 5% peeling

3B: Less than 5-15% peeling

2B: Peeling less than 15 to 35%

1B: Peeling less than 35-65%

0B: Peeling less than 65% to 80%

B: Peeling less than 80% to 95%

A: Peeling less than 95% to 100%

AA: 100% exfoliation (all exfoliation)

In addition, the resin substrates of Examples 3-1 to 3-4 and Comparative Example 3-1 were formed by the following method.

Using a bar coater (gap: 250 μm), either the composition W or X for forming a resin substrate was applied onto the peeling layer (resin thin film) on the glass substrate. And the obtained coating film was heated at 80 ° C. for 10 minutes using a hot plate, then heated at 140 ° C. for 30 minutes using an oven, and the heating temperature was raised to 210 ° C. (10 ° C./min, hereinafter the same), and 210 °C for 30 minutes, the heating temperature was raised to 300 °C, the heating temperature was raised to 400 °C for 30 minutes at 300 °C, and the heating was performed at 400 °C for 60 minutes to form a polyimide substrate having a thickness of about 20 μm on the release layer. did. During the temperature rise, the film-attached substrate was heated in the oven without taking it out of the oven.

As shown in Table 1, it turns out that the peeling layer of an Example is excellent in adhesiveness with a glass substrate and also excellent in peelability with a resin substrate. On the other hand, it was found that the resin thin films of the comparative examples were in close contact with the resin layer and did not come off at all when the adhesion between the glass substrate and the peeling layer was low or high.

Types of Exfoliation Layer Types of Resin Substrates Peelability of peeling layer and glass base Peelability of peeling layer and resin substrate Example 3-1 Example 2-1 W 5B AA Example 3-2 Example 2-2 X 5B AA Example 3-3 Example 2-3 W 5B AA Example 3-4 Example 2-4 W 5B AA Comparative Example 3-1 Comparative Example 2-1 X 5B 5B

Claims (5)

A release layer is formed on a glass substrate using a composition for forming a release layer, a resin solution for forming a resin substrate is applied onto the release layer, and the coating film is heated to fix the release layer to the glass substrate through the release layer. A method for manufacturing a flexible electronic device comprising a step of forming a resin substrate,
A flexible electronic device using the composition for forming a release layer, wherein the composition for forming a release layer contains a polyamic acid obtained by introducing an anchor group into one or both of the polymer chain terminals and an organic solvent, and wherein the anchor group is a silyl group. manufacturing method. The method of claim 1, wherein the polyamic acid is a polyamic acid obtained by reacting a diamine component containing an aromatic diamine with an acid dianhydride component containing an aromatic tetracarboxylic acid dianhydride. The method of claim 2, wherein the aromatic diamine is an aromatic diamine containing 1 to 5 benzene nuclei. The method of claim 2 , wherein the aromatic tetracarboxylic dianhydride is an aromatic tetracarboxylic dianhydride containing 1 to 5 benzene nuclei. The method for manufacturing a flexible electronic device according to any one of claims 1 to 4, wherein the resin substrate is a substrate made of polyimide.