KR20220137000A - 고체 촬상 소자 및 촬상 장치 - Google Patents
고체 촬상 소자 및 촬상 장치 Download PDFInfo
- Publication number
- KR20220137000A KR20220137000A KR1020227024310A KR20227024310A KR20220137000A KR 20220137000 A KR20220137000 A KR 20220137000A KR 1020227024310 A KR1020227024310 A KR 1020227024310A KR 20227024310 A KR20227024310 A KR 20227024310A KR 20220137000 A KR20220137000 A KR 20220137000A
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- Prior art keywords
- light
- effective pixel
- circuit
- imaging device
- pixel
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- 238000003384 imaging method Methods 0.000 title claims abstract description 115
- 238000001514 detection method Methods 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 238000006243 chemical reaction Methods 0.000 claims abstract description 41
- 238000012545 processing Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 22
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- 238000012986 modification Methods 0.000 description 37
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 230000001131 transforming effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/47—Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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- H04N5/3745—
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- H04N5/379—
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10151—Sensor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2020-016454 | 2020-02-03 | ||
JP2020016454 | 2020-02-03 | ||
PCT/JP2021/002230 WO2021157386A1 (ja) | 2020-02-03 | 2021-01-22 | 固体撮像素子および撮像装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20220137000A true KR20220137000A (ko) | 2022-10-11 |
Family
ID=77199325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020227024310A KR20220137000A (ko) | 2020-02-03 | 2021-01-22 | 고체 촬상 소자 및 촬상 장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20230052364A1 (ja) |
EP (1) | EP4102568A4 (ja) |
JP (1) | JPWO2021157386A1 (ja) |
KR (1) | KR20220137000A (ja) |
CN (1) | CN114930808A (ja) |
WO (1) | WO2021157386A1 (ja) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016533140A (ja) | 2013-09-16 | 2016-10-20 | クロノカム | 動的な、単一光ダイオードの画素回路およびその作動方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5029624B2 (ja) * | 2009-01-15 | 2012-09-19 | ソニー株式会社 | 固体撮像装置及び電子機器 |
JP5521721B2 (ja) * | 2009-08-28 | 2014-06-18 | ソニー株式会社 | 撮像素子およびカメラシステム |
WO2017009944A1 (ja) * | 2015-07-14 | 2017-01-19 | オリンパス株式会社 | 固体撮像装置 |
WO2017013806A1 (ja) * | 2015-07-23 | 2017-01-26 | オリンパス株式会社 | 固体撮像装置 |
JP7178605B2 (ja) * | 2017-03-22 | 2022-11-28 | パナソニックIpマネジメント株式会社 | 固体撮像装置 |
JP6912922B2 (ja) * | 2017-04-12 | 2021-08-04 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
JP7311423B2 (ja) * | 2017-10-30 | 2023-07-19 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
-
2021
- 2021-01-22 KR KR1020227024310A patent/KR20220137000A/ko active Search and Examination
- 2021-01-22 US US17/794,034 patent/US20230052364A1/en active Pending
- 2021-01-22 WO PCT/JP2021/002230 patent/WO2021157386A1/ja unknown
- 2021-01-22 CN CN202180008763.9A patent/CN114930808A/zh active Pending
- 2021-01-22 JP JP2021575720A patent/JPWO2021157386A1/ja active Pending
- 2021-01-22 EP EP21750799.5A patent/EP4102568A4/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016533140A (ja) | 2013-09-16 | 2016-10-20 | クロノカム | 動的な、単一光ダイオードの画素回路およびその作動方法 |
Also Published As
Publication number | Publication date |
---|---|
CN114930808A (zh) | 2022-08-19 |
WO2021157386A1 (ja) | 2021-08-12 |
EP4102568A1 (en) | 2022-12-14 |
EP4102568A4 (en) | 2023-07-19 |
JPWO2021157386A1 (ja) | 2021-08-12 |
US20230052364A1 (en) | 2023-02-16 |
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