WO2022149444A1 - 固体撮像素子および撮像装置 - Google Patents
固体撮像素子および撮像装置 Download PDFInfo
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Definitions
- the present disclosure relates to a solid-state image sensor and an image pickup device.
- Patent Document 1 An asynchronous solid-state image sensor has been proposed for each pixel address, which is provided with an address event detection circuit for each pixel to detect in real time that the amount of light of the pixel exceeds the threshold value as an address event (for example).
- a solid-state image sensor includes a light receiving substrate and a circuit board.
- the light receiving substrate has a plurality of light receiving circuits provided with photoelectric conversion elements.
- the circuit board is joined to the light receiving board and has a plurality of address event detection circuits for detecting voltage changes output from the photoelectric conversion elements of the plurality of light receiving circuits.
- the circuit board has a first element region and a second element region. In the first element region, a first transistor driven by a first voltage is arranged. In the second element region, a second transistor driven by a second voltage lower than the first voltage is arranged. Then, an FTI (Full Trench Isolation) structure is arranged between the first element region and the second element region adjacent to each other.
- FTI Full Trench Isolation
- FIG. 8 It is a figure which shows the circuit structure of the effective pixel which concerns on the modification 8 of the Embodiment of this disclosure. It is a block diagram which shows the 2nd configuration example of the address event detection part. It is a block diagram which shows an example of the structure of the image pickup apparatus which concerns on the 2nd configuration example, that is, the scan type image pickup apparatus used as the image pickup apparatus in the image pickup system to which the technique which concerns on this disclosure is applied. It is a schematic diagram which shows an example of the structure of the ranging system which concerns on embodiment of this disclosure. It is a block diagram which shows an example of a circuit structure.
- a synchronous solid-state image sensor that captures image data (frame) in synchronization with a synchronous signal such as a vertical synchronous signal has been used in an image pickup device or the like.
- image data can be acquired only every synchronization signal cycle (for example, 1/60 second), so faster processing can be performed in fields related to transportation and robots. It is difficult to respond when requested.
- an asynchronous solid-state image sensor has been proposed for each pixel address, which is provided with an address event detection circuit for each pixel to detect in real time that the amount of light of the pixel exceeds the threshold value as an address event.
- this solid-state image sensor a photodiode and a plurality of transistors for detecting an address event are arranged for each pixel.
- FIG. 1 is a block diagram showing a configuration example of the image pickup apparatus 100 according to the embodiment of the present disclosure.
- the image pickup device 100 includes a lens 110, a solid-state image pickup element 200, a recording unit 120, and a control unit 130.
- a camera mounted on a wearable device, an in-vehicle camera, or the like is assumed.
- the lens 110 takes in the incident light from the subject and forms an image on the image pickup surface of the solid-state image pickup device 200.
- the solid-state image sensor 200 is also called an EVS (Event-based Vision Sensor), and detects as an address event that the absolute value of the amount of change in luminance exceeds the threshold value for each of the plurality of pixels.
- This address event is, for example, an on event indicating that the amount of increase in brightness exceeds the upper limit threshold value and an off event indicating that the amount of decrease in brightness is below the lower limit threshold value below the upper limit threshold value. including.
- each detection signal includes an on-event detection signal V CH (see FIG. 6) indicating the presence or absence of an on-event and an off-event detection signal V CL (see FIG. 6) indicating the presence or absence of an off-event.
- the solid-state image sensor 200 executes predetermined signal processing such as image recognition processing on the image data consisting of the detection signal, and outputs the processed data to the recording unit 120 via the signal line 209.
- predetermined signal processing such as image recognition processing on the image data consisting of the detection signal
- the recording unit 120 records data from the solid-state image sensor 200.
- the control unit 130 controls the solid-state image sensor 200 so that the solid-state image sensor 200 captures image data.
- FIG. 2 is a diagram for explaining the laminated structure of the solid-state image pickup device 200 according to the embodiment of the present disclosure.
- the solid-state image sensor 200 includes a circuit board 202 and a light receiving board 201 laminated on the circuit board 202.
- the light receiving substrate 201 and the circuit board 202 are electrically connected via connecting portions such as vias, Cu—Cu junctions, and bumps.
- FIG. 3 is a diagram for explaining the planar configuration of the light receiving substrate 201 according to the embodiment of the present disclosure.
- the light receiving substrate 201 has a light receiving portion 210, a via arranging portion 221 and a via arranging portion 222.
- a plurality of light receiving circuits 211 are arranged in a two-dimensional lattice in the light receiving unit 210.
- the light receiving circuit 211 generates a photocurrent by photoelectrically converting the incident light, and converts the light current into a current and a voltage to output a voltage signal.
- a pixel address consisting of a row address and a column address is assigned to each of these light receiving circuits 211.
- Vias connected to the circuit board 202 are arranged in the via arrangement portion 221 and the via arrangement portion 222.
- FIG. 4 is a diagram for explaining a planar configuration of the circuit board 202 according to the embodiment of the present disclosure.
- the circuit board 202 has an address event detection unit 230, a signal processing circuit 240, a row drive circuit 251, a column drive circuit 252, a via arrangement unit 261 and a via arrangement unit 262. ..
- a plurality of address event detection circuits 231 are arranged in a two-dimensional grid pattern in the address event detection unit 230.
- the address event detection circuit 231 quantizes the voltage signal from the light receiving circuit 211, and outputs the quantized voltage signal as a detection signal.
- a pixel address is assigned to each of the address event detection circuits 231 and is electrically connected to the light receiving circuit 211 of the same address. Further, in the embodiment, the light receiving circuit 211 and the address event detection circuit 231 having the same address are arranged at the same position in a plan view.
- the signal processing circuit 240 executes predetermined signal processing on the detection signal from the address event detection unit 230. For example, the signal processing circuit 240 arranges such detection signals as pixel signals in a two-dimensional grid pattern, and acquires image data having 2 bits of information for each pixel. Then, the signal processing circuit 240 executes signal processing such as image recognition processing on the acquired image data.
- the row drive circuit 251 selects a row address and outputs a detection signal corresponding to the selected row address to the address event detection unit 230.
- the column drive circuit 252 selects a column address and causes the address event detection unit 230 to output a detection signal corresponding to the selected column address.
- Vias connected to the light receiving substrate 201 are arranged in the via arrangement portion 261 and the via arrangement portion 262.
- FIG. 5 is a diagram for explaining the configuration of the effective pixel 310 according to the embodiment of the present disclosure.
- each of the effective pixels 310 includes a light receiving circuit 211 in the light receiving board 201 to which the same pixel address is assigned, and an address event detection circuit 231 in the circuit board 202.
- a plurality of light receiving circuits 211 and a plurality of address event detection circuits 231 are arranged in a two-dimensional grid pattern. Further, the light receiving circuit 211 and the address event detection circuit 231 having the same address are arranged at the same position in a plan view.
- the effective pixels 310 composed of the light receiving circuit 211 and the address event detection circuit 231 are arranged in a two-dimensional grid pattern. Then, the set of the light receiving circuit 211 and the address event detection circuit 231 are electrically connected at the junction 203 via a connection portion such as a via, a Cu—Cu junction, or a bump.
- FIG. 6 is a diagram showing a circuit configuration of the effective pixel 310 according to the embodiment of the present disclosure.
- the effective pixel 310 includes a photodiode 311, a current-voltage conversion circuit 320, a buffer 330, a subtractor 340, a quantizer 350, and a transfer circuit 360.
- the photodiode 311 is an example of a photoelectric conversion element.
- the photodiode 311 and the N-type transistors 321 and 322 of the current-voltage conversion circuit 320 are included in the light receiving circuit 211. Further, among each part of the effective pixel 310, the buffer 330, the subtractor 340, the quantizer 350, and the transfer circuit 360 are included in the address event detection circuit 231.
- the effective pixel 310 has a photodiode 311, a current-voltage conversion circuit 320, and an address event detection circuit 231.
- the photodiode 311 photoelectrically converts the incident light to generate a photocurrent. Then, the photodiode 311 supplies the generated photocurrent to the current-voltage conversion circuit 320.
- the current-voltage conversion circuit 320 converts the photocurrent from the photodiode 311 into a logarithmic voltage signal. Then, the current-voltage conversion circuit 320 supplies the converted voltage signal to the buffer 330.
- the buffer 330 corrects the voltage signal sent from the current-voltage conversion circuit 320, and outputs this corrected signal to the subtractor 340.
- the driving force for driving the subsequent stage can be improved by the buffer 330, and the noise isolation associated with the switching operation of the subsequent stage can be ensured.
- the subtractor 340 obtains the amount of change in the correction signal sent from the buffer 330 by the subtraction process. Then, the subtractor 340 supplies the obtained change amount as a differential signal to the quantizer 350.
- the quantizer 350 converts (that is, quantizes) an analog differential signal into a digital detection signal by comparing the differential signal with a predetermined threshold value.
- the quantizer 350 according to the embodiment compares the differential signal with each of the upper limit threshold value and the lower limit threshold value, and supplies the comparison result as a 2-bit detection signal to the transfer circuit 360.
- the transfer circuit 360 transfers the detection signal to the signal processing circuit 240 according to the column drive signal from the column drive circuit 252.
- the current-voltage conversion circuit 320 includes an N-type transistor 321, an N-type transistor 322, and a P-type transistor 323.
- a MOS (Metal-Oxide-Semiconductor) transistor is used for the N-type transistor 321 and the N-type transistor 322 and the P-type transistor 323, for example.
- the source of the N-type transistor 321 is connected to the cathode of the photodiode 311 and the drain is connected to the terminal of the first voltage VDD1.
- the anode of the photodiode 311 is connected to the ground potential terminal.
- the P-type transistor 323 and the N-type transistor 322 are connected in series in this order between the terminal of the first voltage VDD1 and the terminal of the ground potential.
- the photodiode 311 and each transistor included in the current-voltage conversion circuit 320 are driven by the first voltage VDD1.
- the first voltage VDD1 is, for example, 2.2 (V) to 2.8 (V).
- connection point between the P-type transistor 323 and the N-type transistor 322 is connected to the gate of the N-type transistor 321 and the input terminal of the buffer 330.
- the connection point between the N-type transistor 321 and the photodiode 311 is connected to the gate of the N-type transistor 322.
- a predetermined bias voltage Vblog is applied to the gate of the P-type transistor 323.
- the N-type transistor 321 converts the optical current generated by the photodiode 311 into a voltage between the gate and the source, and the N-type transistor 322 is a source of a potential gate and a ground potential corresponding to the applied optical current.
- the voltage between and is amplified and output from the drain.
- the P-type transistor 323 supplies a constant current based on the bias voltage V blog to the N-type transistor 322.
- the current-voltage conversion circuit 320 converts the photocurrent from the photodiode 311 into a voltage signal.
- the photodiode 311, the N-type transistor 321 and the N-type transistor 322 are arranged on the light receiving substrate 201, and the circuits after the P-type transistor 323 are arranged on the circuit board 202. Ru.
- FIG. 7 is a diagram for explaining the configuration of the effective pixel 310 according to the embodiment of the present disclosure. As shown in FIG. 7, a photodiode 311 is embedded in the P-well region of the light receiving substrate 201, and a back gate of the N-type transistor 321 and a back gate of the N-type transistor 322 are formed.
- a first voltage VDD1 is supplied to the drain of the N-type transistor 321, and the potential of the P-well region (that is, the anode of the photodiode 311) and the potential of the source of the N-type transistor 322 are ground potentials. Further, each P-well region of the adjacent effective pixels 310 is separated by a pixel separation portion 410 (see FIG. 8) formed in the alternate long and short dash line portion.
- the buffer 330 has a P-type transistor 331 and a P-type transistor 332.
- a MOS transistor is used for the P-type transistor 331 and the P-type transistor 332.
- the P-type transistor 331 and the P-type transistor 332 are connected in series in this order between the terminal of the first voltage VDD1 and the terminal of the ground potential.
- a predetermined bias voltage V bsf is applied to the gate of the P-type transistor 331.
- the gate of the P-type transistor 332 is connected to the output terminal of the current-voltage conversion circuit 320.
- the buffer 330 outputs the corrected voltage signal from the connection point between the P-type transistor 331 and the P-type transistor 332 to the subtractor 340. Further, in the present disclosure, each transistor included in the buffer 330 is driven by the first voltage VDD1.
- the subtractor 340 has a capacitor 341, a P-type transistor 342, a capacitor 343, a P-type transistor 344, and an N-type transistor 345.
- a MOS transistor is used for the P-type transistor 342, the P-type transistor 344, and the N-type transistor 345.
- the P-type transistor 344 and the N-type transistor 345 are connected in series in this order between the terminal of the second voltage VDD2 and the terminal of the reference potential.
- a predetermined bias voltage Vba is applied to the gate of the N-type transistor 345.
- the P-type transistor 344 and the N-type transistor 345 invert the input signal and output when the gate of the P-type transistor 344 is used as an input terminal and the connection point between the P-type transistor 344 and the N-type transistor 345 is used as an output terminal. Functions as an inverter.
- One end of the capacitor 341 is connected to the output terminal of the buffer 330, and the other end is connected to the input terminal of the inverter (that is, the gate of the P-type transistor 344).
- One end of the capacitor 343 is connected to the input terminal of the inverter, and the other end is connected to the output terminal of the inverter (that is, the connection point between the P-type transistor 344 and the N-type transistor 345).
- the P-type transistor 342 opens and closes the path connecting both ends of the capacitor 343 according to the row drive signal output from the row drive circuit 251.
- the voltage signal Vinit is input to the buffer 330 side of the capacitor 341, and the opposite side becomes a virtual ground terminal.
- the potential of this virtual ground terminal is set to zero for convenience.
- the charge Q2 stored in the capacitor 343 is expressed by the following equation (3), where the capacitance of the capacitor 343 is C2 and the output voltage is V out .
- Q2 -C2 x V out ... (3)
- the above equation (5) represents the subtraction operation of the voltage signal, and the gain of the subtraction result is C1 / C2. Since it is usually desired to maximize the gain, it is preferable to design the capacitance C1 to be large and the capacitance C2 to be small. On the other hand, if the capacitance C2 is too small, kTC noise may increase and noise characteristics may deteriorate. Therefore, the capacitance reduction of the capacitance C2 is limited to a range in which noise can be tolerated.
- the capacitance C1 and the capacitance C2 have an area limitation.
- the capacity C1 is set to a value of 20 to 200 femtofarads (fF)
- the capacity C2 is set to a value of 1 to 20 femtofarads (fF).
- each transistor included in the subtractor 340 is driven by a second voltage VDD2.
- the second voltage VDD2 is a voltage lower than that of the first voltage VDD1, and is, for example, 0.85 (V).
- the first voltage VDD1 and the second voltage VDD2 are collectively referred to as "power supply voltage VDD”.
- the quantizer 350 has a P-type transistor 351, an N-type transistor 352, a P-type transistor 353, and an N-type transistor 354.
- a MOS transistor is used for the P-type transistor 351 and the N-type transistor 352, for example, a MOS transistor is used.
- the P-type transistor 351 and the N-type transistor 352 are connected in series in this order between the terminal of the second voltage VDD2 and the terminal of the ground potential.
- the P-type transistor 353 and the N-type transistor 354 are connected in series in this order between the terminal of the second voltage VDD2 and the terminal of the reference potential.
- the gate of the P-type transistor 351 and the gate of the P-type transistor 353 are connected to the output terminal of the subtractor 340.
- a bias voltage V bon indicating an upper limit threshold value is applied to the gate of the N-type transistor 352
- a bias voltage V boff indicating a lower limit threshold value is applied to the gate of the N-type transistor 354.
- connection points of the P-type transistor 351 and the N-type transistor 352 are connected to the transfer circuit 360.
- the voltage at the connection point is output to the transfer circuit 360 as an on-event detection signal V CH .
- connection points of the P-type transistor 353 and the N-type transistor 354 are connected to the transfer circuit 360.
- the voltage at the connection point is output as an off-event detection signal VCL .
- the quantizer 350 outputs a high level on-event detection signal VCH when the differential signal exceeds the upper limit threshold value, and low when the differential signal falls below the lower limit threshold value.
- the level off event detection signal VCL is output. That is, the solid-state image sensor 200 according to the embodiment can simultaneously detect the presence / absence of both on-event and off-event.
- each transistor included in the quantizer 350 is driven by the second voltage VDD2.
- FIG. 8 is a diagram showing a cross-sectional structure of the solid-state image sensor 200 according to the embodiment of the present disclosure, and mainly shows the cross-sectional structure of the peripheral portion of the solid-state image sensor 200.
- the solid-state image sensor 200 has an effective pixel region R1, a dummy pixel region R2, a power supply region R3, and a pad region R4.
- the effective pixel area R1 is an area in which the laminated light receiving unit 210 and the address event detection unit 230 are provided. In the effective pixel region R1, a plurality of effective pixels 310 are arranged in a two-dimensional grid pattern.
- the dummy pixel area R2 is an area provided so as to surround all four sides of the effective pixel area R1.
- FIG. 9 is a diagram showing a planar configuration of the solid-state image sensor 200 according to the embodiment of the present disclosure.
- a plurality of dummy pixels 310A are arranged side by side in the dummy pixel region R2.
- the dummy pixel 310A has the same basic configuration as the effective pixel 310, but is a pixel that does not output a signal to the outside.
- the manufacturing yield of the solid-state image sensor 200 can be improved.
- the power supply area R3 is an area provided so as to surround the four sides of the dummy pixel area R2.
- the power supply region R3 has a ground wiring 421 to which a ground potential is applied from the outside, a power supply wiring 422 to which a power supply voltage VDD is applied from the outside, and a power supply wiring 423 to which a board voltage VSUB is applied from the outside.
- the ground wiring 421 and the power supply wiring 422 and 423 are formed in a ring shape around the dummy pixel region R2, for example.
- the ground wiring 421 supplies a ground potential to a plurality of effective pixels 310 and the like.
- the power supply wiring 422 supplies the power supply voltage VDD to a plurality of effective pixels 310 and the like.
- the power supply wiring 423 supplies a substrate voltage V SUB having the same potential as the power supply voltage VDD to a portion other than the effective pixel region R1 and the dummy pixel region R2 of the solid-state image sensor 200.
- the solid-state image sensor 200 by providing the power supply wiring 423 separately from the power supply wiring 422, a stable substrate voltage VSUB can be solidified even when the power supply voltage VDD fluctuates when the effective pixel 310 operates. It can be supplied to the peripheral portion of the image pickup device 200. Therefore, according to the embodiment, the solid-state image sensor 200 can be operated stably.
- the pad region R4 is a region provided around the power supply region R3, and has a contact hole 424 and a bonding pad 425.
- the contact hole 424 is formed along the thickness direction of the light receiving board 201 and the circuit board 202 from the surface of the light receiving board 201 on the light incident side to the middle of the circuit board 202.
- the bonding pad 425 is provided at the bottom of the contact hole 424.
- a bonding wire or the like is bonded to the bonding pad 425 via the contact hole 424 so that the recording unit 120 (see FIG. 1) or the control unit 130 (see FIG. 1) and each unit of the solid-state image sensor 200 are connected to each other. It is electrically connected.
- the configuration of the effective pixel 310 arranged in the effective pixel area R1 will be further described with reference to FIG.
- the solid-state image sensor 200 is configured by laminating a light receiving substrate 201 and a circuit board 202, and a joint portion 203 is provided at an interface between the light receiving substrate 201 and the circuit board 202.
- the light receiving substrate 201 has a semiconductor layer 201a and an insulating layer 201b.
- the semiconductor layer 201a is made of a semiconductor material such as silicon.
- a photodiode 311 (see FIG. 7), an N-type transistor 321 (see FIG. 7), an N-type transistor 322 (see FIG. 7), and the like are formed on the semiconductor layer 201a for each effective pixel 310 and dummy pixel 310A. ..
- a pixel separation portion 410 is formed so as to separate adjacent effective pixels 310 and dummy pixels 310A from each other.
- the pixel separation unit 410 electrically and optically separates adjacent effective pixels 310 and dummy pixels 310A from each other.
- the pixel separation unit 410 is formed so as to individually surround the effective pixel 310 and the dummy pixel 310A and to penetrate the semiconductor layer 201a, for example.
- a flattening film 411 is formed on the light incident side surface of the semiconductor layer 201a, and an on-chip lens 412 is formed on the light incident side surface of the flattening film 411.
- the flattening film 411 flattens the surface on which the on-chip lens 412 is mounted.
- the on-chip lens 412 is provided individually on, for example, the effective pixel 310 and the dummy pixel 310A, and collects the incident light and guides it to the effective pixel 310 and the dummy pixel 310A.
- the insulating layer 201b is made of an insulating material such as silicon oxide (SiO x ), silicon nitride (SiN), or silicon oxynitride (SiON), and is provided on the surface of the semiconductor layer 201a opposite to the light incident side.
- SiO x silicon oxide
- SiN silicon nitride
- SiON silicon oxynitride
- the insulating layer 201b is formed with a wiring portion 401 composed of a wiring layer, vias, and the like.
- the wiring portion 401 is electrically connected to the photodiode 311 provided in the semiconductor layer 201a, the N-type transistor 321 and the N-type transistor 322 in the wiring configuration shown in FIG.
- the wiring unit 401 is electrically connected to the pad 403 via the via 402.
- the pad 403 is provided exposed on the surface of the light receiving substrate 201 opposite to the surface on the light incident side (that is, the interface with the circuit board 202), and is made of copper or a copper alloy.
- the circuit board 202 has an insulating layer 202a on the interface side with the light receiving board 201.
- the insulating layer 202a is made of an insulating material such as silicon oxide, silicon nitride, or silicon oxynitride.
- the insulating layer 202a has a pad 404.
- the pad 404 is exposed on the surface of the circuit board 202 on the light incident side (that is, the interface with the light receiving substrate 201), and is made of copper or a copper alloy.
- the pad 404 is electrically connected to the wiring portion 406 via the via 405.
- the wiring portion 406 is composed of a wiring layer, vias, and the like, and is electrically connected to the gate of the P-type transistor 332 (see FIG. 6) and the source of the P-type transistor 323 (see FIG. 6). Then, in the embodiment, the pad 403 and the pad 404 are directly joined by Cu—Cu joining.
- FIG. 10 is a diagram showing a cross-sectional configuration of the solid-state image sensor 200 according to the embodiment of the present disclosure.
- the solid-state image sensor 200 is configured by laminating a light receiving substrate 201 and a circuit board 202, and a joint portion 203 is provided at an interface between the light receiving substrate 201 and the circuit board 202.
- the light receiving substrate 201 has a semiconductor layer 201a and an insulating layer 201b.
- the semiconductor layer 201a is made of a semiconductor material such as silicon.
- a photodiode 311 see FIG. 7
- an N-type transistor 321 see FIG. 7
- an N-type transistor 322 see FIG. 7
- the like are formed on the semiconductor layer 201a for each effective pixel 310.
- the insulating layer 201b is made of an insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and is provided on the surface of the semiconductor layer 201a opposite to the incident side of the light L.
- a wiring portion 401, a via 402, a pad 403, and the like are formed inside the insulating layer 201b.
- the circuit board 202 has an insulating layer 202a, a semiconductor layer 202b, and an insulating layer 202c, and is laminated in this order from the light incident side.
- the insulating layer 202a is arranged on the interface side of the circuit board 202 with the light receiving substrate 201.
- the insulating layer 202a is made of an insulating material such as silicon oxide, silicon nitride, or silicon oxynitride. Further, a pad 404, a via 405, a wiring portion 406, and the like are formed inside the insulating layer 202a.
- the semiconductor layer 202b is made of a semiconductor material such as silicon.
- the semiconductor layer 202b is provided with an N-well region 511, a P-well region 512, an N-well region 513, and the like.
- the N-well region 511 is an example of the first well region
- the P-well region 512 is an example of the second well region
- the N-well region 513 is an example of the third well region.
- various transistors provided on the circuit board 202 and driven by the first voltage VDD1 are arranged.
- a P-type transistor 323 (see FIG. 6), a P-type transistor 331 (see FIG. 6), a P-type transistor 332 (see FIG. 6), and the like are arranged in the N-well region 511.
- the region (for example, N-well region 511) in which various transistors driven by the first voltage VDD1 are arranged in the semiconductor layer 202b is defined as the first element region 501. Further, in the present disclosure, various transistors arranged in the first element region 501 are collectively referred to as the first transistor T1.
- various N-type transistors provided on the circuit board 202 and driven by the second voltage VDD2 (see FIG. 6) are arranged.
- an N-type transistor 345 (see FIG. 6)
- an N-type transistor 352 (see FIG. 6)
- an N-type transistor 354 (see FIG. 6), and the like are arranged in the P-well region 512.
- the N-well region 513 includes, for example, a P-type transistor 342 (see FIG. 6), a P-type transistor 344 (see FIG. 6), a P-type transistor 351 (see FIG. 6), a P-type transistor 353 (see FIG. 6), and the like. Is placed.
- a region (for example, P-well region 512 and N-well region 513) in which various transistors driven by the second voltage VDD2 are arranged in the semiconductor layer 202b is defined as a second element region 502. .
- various transistors arranged in the second element region 502 are collectively referred to as a second transistor T2.
- the FTI (Full Trench Isolation) structure 521 is arranged between the first element region 501 and the second element region 502 adjacent to each other.
- the "FTI structure” means that a trench is formed so as to reach from the surface of the semiconductor layer 202b on the light incident side to the surface opposite to the light incident side, and an insulating material (for example, oxidation) is formed in the trench. It is a structure composed of embedded silicon (such as silicon).
- the FTI structure 521 is arranged so as to surround the circumference of the first element region 501 and extends substantially perpendicular to the surface of the circuit board 202 (that is, the incident direction of the light L). (To extend along).
- FIG. 11 is a diagram showing a cross-sectional configuration of the solid-state image sensor 1200 in the reference example of the present disclosure.
- STI Shallow Trench Isolation
- the “STI structure” means that a trench is formed so as to extend from the surface of the semiconductor layer 202b on the light incident side but not reach the surface opposite to the light incident side, and the insulating material is formed in the trench. It is a structure configured by embedding (for example, silicon oxide, etc.).
- the STI structure 1521 arranged between the first element region 501 and the second element region 502 has the N well region 511 and the second element region 502 of the first element region 501. It cannot be sufficiently electrically separated from the N-well region 513.
- the N-well region 511 and the N-well region 513 are formed by increasing the width of the P-well region 512A directly adjacent to the N-well region 511 among the P-well regions 512. Techniques are taken to ensure electrical separation between.
- the address event detection circuit 231 is individually provided for each effective pixel 310, in the reference example in which it is difficult to reduce the area of the address event detection circuit 231, the area of the effective pixel 310. was difficult to reduce.
- the FTI structure 521 is arranged between the first element region 501 and the second element region 502. Then, in the embodiment, the FTI structure 521 alone can substantially electrically separate the N-well region 511 of the first element region 501 and the N-well region 513 of the second element region 502.
- the width of the P-well region 512A directly adjacent to the N-well region 511 can be reduced in the P-well region 512.
- the area of the P-well region 512A can be reduced, the area of the address event detection circuit 231 (see FIG. 5) including the P-well region 512A can be reduced.
- the area of the effective pixel 310 can be reduced.
- the STI structure 522 may be arranged between the P-well region 512 and the N-well region 513 adjacent to each other. This makes it possible to improve the electrical separation characteristics inside the second element region 502.
- the embodiment it is possible to suppress deterioration of the signal quality of the address event detection circuit 231 due to noise caused by disturbance or the like.
- the insulating layer 202c is arranged so as to be in contact with the surface of the semiconductor layer 202b opposite to the light incident side.
- the insulating layer 202c is made of an insulating material such as silicon oxide, silicon nitride, or silicon oxynitride.
- the insulating layer 202c is arranged so as to cover the first element region 501 and the second element region 502, and the end portion of the FTI structure 521 opposite to the light incident side is the insulating layer 202c. Arranged so as to be in contact with.
- the N-well region 511 of the first element region 501 and the N-well region 513 of the second element region 502 can be satisfactorily electrically separated.
- the width of the P-well region 512A can be further reduced, so that the area of the effective pixel 310 can be further reduced.
- the circuit board 202 in which the insulating layer 202c is arranged can be formed.
- the wirings of the light receiving board 201 and the circuit board 202 are directly joined to each other. That is, in the embodiment, the pad 403 and the pad 404 are directly bonded by Cu—Cu bonding, so that the wiring portion 401 of the light receiving board 201 and the wiring portion 406 of the circuit board 202 are electrically connected. It is good.
- the number of wires that need to be connected by the via arrangement portions 221, 222, 261 and 262 can be reduced, so that the area of the via arrangement portions 221, 222, 261 and 262 can be reduced. Can be reduced.
- the via arrangement portion 221, 222, 261 and 262 can arrange the additional effective pixel 310 in the reduced area, the resolution of the solid-state image sensor 200 can be improved.
- FIG. 12 is a diagram showing a cross-sectional configuration of the solid-state image sensor 200 according to the modification 1 of the embodiment of the present disclosure
- FIG. 13 is a cross-sectional configuration of the solid-state image sensor 200 according to the modification 2 of the embodiment of the present disclosure. It is a figure which shows.
- the insulating layer 202c may be arranged so as to cover only the first element region 501. In this case, it is preferable that a part of the end portion of the FTI structure 521 opposite to the light incident side is in contact with the insulating layer 202c.
- the width of the P-well region 512A can be further reduced, so that the area of the effective pixel 310 can be further reduced.
- the insulating layer 202c is not limited to the case where it is arranged so as to cover only the first element region 501, and may be arranged so as to cover only the second element region 502 as shown in FIG. .. Also in this case, it is preferable that a part of the end portion of the FTI structure 521 opposite to the light incident side is in contact with the insulating layer 202c.
- the width of the P-well region 512A can be further reduced, so that the area of the effective pixel 310 can be further reduced.
- the insulating layer 202c is arranged so as to cover only the first element region 501 is shown, but the insulating layer 202c is the entire first element region 501 and the second element region. It may cover a part of 502.
- the insulating layer 202c is arranged so as to cover only the second element region 502 is shown, but the insulating layer 202c covers the entire second element region 502 and the first element region. It may cover a part of 501.
- FIG. 14 is a diagram showing a cross-sectional configuration of the solid-state image sensor 200 according to the third modification of the embodiment of the present disclosure.
- a part of the configuration of the circuit board 202 is different from that of the embodiment.
- the circuit board 202 has an insulating layer 202a, a semiconductor layer 202b, a well layer 202d, and a semiconductor layer 202e, and is laminated in this order from the light incident side.
- the well layer 202d is made of a semiconductor material such as silicon, and is a conductive type (P type in the figure) well layer different from the N well region 511.
- the semiconductor layer 202e is made of a semiconductor material such as silicon, and is a conductive type (N type in the figure) semiconductor layer different from the well layer 202d.
- the conductive well layer 202d different from the N-well region 511 is arranged so as to cover the first element region 501 and the second element region 502, which is opposite to the light incident side in the FTI structure 521.
- the side end is arranged so as to be in contact with the well layer 202d.
- the N-well region 511 of the first element region 501 and the N-well region 513 of the second element region 502 can be satisfactorily electrically separated.
- the SOI is relatively expensive.
- the circuit board 202 can be manufactured without using a board.
- the manufacturing cost of the solid-state image sensor 200 can be reduced.
- FIG. 15 is a diagram showing a cross-sectional configuration of the solid-state image sensor 200 according to the modification 4 of the embodiment of the present disclosure
- FIG. 16 is a cross-sectional configuration of the solid-state image sensor 200 according to the modification 5 of the embodiment of the present disclosure. It is a figure which shows.
- the well layer 202d may be arranged so as to cover only the first element region 501. In this case, it is preferable that a part of the end portion of the FTI structure 521 opposite to the light incident side is in contact with the well layer 202d.
- the well layer 202d is not limited to the case where it is arranged so as to cover only the first element region 501, and may be arranged so as to cover only the second element region 502 as shown in FIG. .. Also in this case, it is preferable that a part of the end portion of the FTI structure 521 opposite to the light incident side is in contact with the well layer 202d.
- the width of the P-well region 512A can be further reduced, so that the area of the effective pixel 310 can be further reduced.
- the well layer 202d is arranged so as to cover only the first element region 501, but the well layer 202d is the entire first element region 501 and the second element region. It may cover a part of 502.
- the well layer 202d is arranged so as to cover only the second element region 502 is shown, but the well layer 202d is the entire second element region 502 and the first element region. It may cover a part of 501.
- FIG. 17 is a diagram showing a cross-sectional configuration of a solid-state image sensor 200 according to a modification 6 of the embodiment of the present disclosure.
- the internal configuration of the second element region 502 is different from that of the embodiment.
- the FTI structure 523 is arranged between the P-well region 512 and the N-well region 513 adjacent to each other instead of the STI structure 522.
- the FTI structure 523 is an example of another FTI structure.
- the electrical separation characteristic inside the second element region 502 can be further improved. Therefore, according to the modification 6, it is possible to further suppress the deterioration of the signal quality of the address event detection circuit 231 (see FIG. 5) due to noise caused by disturbance or the like.
- the FTI structure 521 and the FTI structure 523 can be manufactured in the same process, the manufacturing process of the circuit board 202 can be simplified. Therefore, according to the modification 6, the manufacturing cost of the solid-state image sensor 200 can be reduced.
- FIG. 17 shows an example in which the P-well region 512 and the N-well region 513 are all separated by the FTI structure 523, the present disclosure is not limited to such an example.
- the FTI structure 523 and the STI structure 522 may be mixed between the P-well region 512 and the N-well region 513 adjacent to each other.
- FIG. 18 is a diagram showing a cross-sectional configuration of the solid-state image sensor 200 according to the modified example 8 of the embodiment of the present disclosure.
- the orientation of the circuit board 202 at the time of joining to the light receiving substrate 201 is different from that of the embodiment.
- the semiconductor layer 202b of the circuit board 202 is arranged on the circuit board 202 side, and the insulating layer 202a is arranged on the side distant from the semiconductor layer 202b with respect to the circuit board 202. .. Then, in the modification 7, the joint portion 203 is provided on the semiconductor layer 202b side of the circuit board 202.
- the width of the P-well region 512A can be reduced by arranging the FTI structure 521 between the first element region 501 and the second element region 502. Therefore, according to the modification 7, the area of the effective pixel 310 can be reduced.
- the wiring portion 401 of the light receiving board 201 and the wiring portion 406 of the circuit board 202 are electrically connected by the via 531.
- the step of directly joining the pad 403 and the pad 404 can be omitted, so that the step of joining the light receiving substrate 201 and the circuit board 202 can be simplified.
- the via 531 is arranged so as to penetrate the inside of the FTI structure 521. This eliminates the need for a space for separately arranging the via 531, so that the area of the effective pixel 310 can be further reduced.
- FIG. 19 is a diagram showing a circuit configuration of an effective pixel 310 according to a modification 8 of the embodiment of the present disclosure, and shows a quantizer 350 that detects the presence or absence of either an on-event or an off-event selected. ing.
- the quantizer 350 according to the modification 8 has a P-type transistor 351, an N-type transistor 352, and a switch 355.
- the P-type transistor 351 and the N-type transistor 352 are connected in series in this order between the terminal of the power supply voltage VDD and the terminal of the ground potential.
- the gate of the P-type transistor 351 is connected to the output terminal of the subtractor 340.
- the gate of the N-type transistor 352 is connected to the switch 355.
- control unit 130 can apply a bias voltage V bon indicating an upper limit threshold value or a bias voltage V boff indicating a lower limit threshold value to the gate of the N-type transistor 352 by switching the switch 355.
- the connection point 356 of the P-type transistor 351 and the N-type transistor 352 is connected to the transfer circuit 360.
- the voltage at the connection point 356 is output to the transfer circuit 360 as an on-event detection signal V CH in the quantizer 350 according to the modified example 8.
- the quantizer 350 according to the modified example 8 has a high-level on-event detection signal V when the differential signal exceeds the upper limit threshold value when the on-event is selected by the control unit 130. Output CH .
- the quantizer 350 according to the modification 8 outputs a low-level off-event detection signal VCL when the differential signal falls below the lower limit threshold value when the off-event is selected by the control unit 130. do.
- the on-event detection signal VCH is efficiently selected by the control unit 130 when the light source (not shown) is turned on by a command from the control unit 130 or the like. Can be output.
- the off-event detection signal VCL is efficiently selected by the control unit 130 when the light source (not shown) is turned off by a command from the control unit 130 or the like. Can be output.
- the solid-state image pickup device 200 includes a light receiving substrate 201 and a circuit board 202.
- the light receiving substrate 201 has a plurality of light receiving circuits 211 provided with a photoelectric conversion element (photodiode 311).
- the circuit board 202 is joined to the light receiving board 201 and has a plurality of address event detection circuits 231 for detecting voltage changes output from the photoelectric conversion elements (photodiodes 311) of the plurality of light receiving circuits 211.
- the circuit board 202 has a first element region 501 and a second element region 502.
- a first transistor T1 driven by a first voltage VDD1 is arranged in the first element region 501.
- a second transistor T2 driven by a second voltage VDD2 lower than the first voltage VDD1 is arranged.
- an FTI (Full Trench Isolation) structure 521 is arranged between the first element region 501 and the second element region 502 adjacent to each other.
- the area of the effective pixel 310 can be reduced.
- the end portion of the FTI structure 521 on the side opposite to the light incident side is in contact with the insulating layer 202c.
- the area of the effective pixel 310 can be further reduced.
- a part of the end portion of the FTI structure 521 on the side opposite to the light incident side is in contact with the insulating layer 202c.
- the area of the effective pixel 310 can be further reduced.
- the end portion of the FTI structure 521 opposite to the light incident side is a first well region (N well region 511) located in the first element region 501. Is in contact with a different conductive well layer 202d.
- the area of the effective pixel 310 can be further reduced.
- a part of the end portion of the FTI structure 521 on the side opposite to the light incident side is in contact with the well layer 202d.
- the area of the effective pixel 310 can be further reduced.
- the wirings of the light receiving substrate 201 and the circuit board 202 are directly bonded to each other.
- the light receiving substrate 201 and the circuit board 202 are connected to each other by wirings via via 531.
- the second element region 502 includes a first conductive type second well region (P well region 512) and a second conductive type third well region (N). It has a well area 513). Further, another FTI structure 523 is arranged between the second well region (P well region 512) and the third well region (N well region 513) adjacent to each other.
- FIG. 20 is a block diagram showing a second configuration example of the address event detection unit 1000.
- the address event detection unit 1000 according to this configuration example includes a storage unit 1336 and a storage unit 1336 in addition to the current-voltage conversion unit 1331, the buffer 1332, the subtractor 1333, the quantizer 1334, and the transfer unit 1335. It is configured to have a control unit 1337.
- the storage unit 1336 is provided between the quantizer 1334 and the transfer unit 1335, and based on the sample signal supplied from the control unit 1337, the output of the quantizer 1334, that is, the comparison result of the comparator 1334a is obtained. accumulate.
- the storage unit 1336 may be a sampling circuit such as a switch, plastic, or capacitance, or may be a digital memory circuit such as a latch or flip-flop.
- the control unit 1337 supplies a predetermined threshold voltage Vth to the inverting ( ⁇ ) input terminal of the comparator 1334a.
- the threshold voltage Vth supplied from the control unit 1337 to the comparator 1334a may have different voltage values in time division.
- the control unit 1337 corresponds to the threshold voltage Vth1 corresponding to the on-event indicating that the amount of change in the optical current has exceeded the upper limit threshold value, and the off-event indicating that the amount of change has fallen below the lower limit threshold value.
- the threshold voltage Vth2 By supplying the threshold voltage Vth2 to be performed at different timings, one comparator 1334a can detect a plurality of types of address events.
- the storage unit 1336 is, for example, a comparator using the threshold voltage Vth1 corresponding to the on-event during the period in which the threshold voltage Vth2 corresponding to the off-event is supplied from the control unit 1337 to the inverting (-) input terminal of the comparator 1334a.
- the comparison result of 1334a may be accumulated.
- the storage unit 1336 may be inside the pixel 2030 (see FIG. 21) or may be outside the pixel 2030. Further, the storage unit 1336 is not an essential component of the address event detection unit 1000. That is, the storage unit 1336 may be omitted.
- the image pickup device 100 according to the first configuration example described above is an asynchronous type image pickup device that reads out an event by an asynchronous type read-out method.
- the event reading method is not limited to the asynchronous reading method, and may be a synchronous reading method.
- the image pickup device to which the synchronous readout method is applied is a scan type image pickup device, which is the same as a normal image pickup device that performs image pickup at a predetermined frame rate.
- FIG. 21 is a block diagram showing an example of the configuration of the image pickup device according to the second configuration example, that is, the scan type image pickup device, which is used as the image pickup device 2000 in the image pickup system to which the technique according to the present disclosure is applied.
- the image pickup device 2000 includes a pixel array unit 2021, a drive unit 2022, a signal processing unit 2025, a read area selection unit 2027, and a signal generation unit. It is configured to include 2028.
- the pixel array unit 2021 includes a plurality of pixels 2030.
- the plurality of pixels 2030 output an output signal in response to the selection signal of the read area selection unit 2027.
- Each of the plurality of pixels 2030 may be configured to have a quantizer comparator in the pixel.
- the plurality of pixels 2030 output an output signal corresponding to the amount of change in light intensity. As shown in FIG. 21, the plurality of pixels 2030 may be two-dimensionally arranged in a matrix.
- the drive unit 2022 drives each of the plurality of pixels 2030 to output the pixel signal generated by each pixel 2030 to the signal processing unit 2025.
- the drive unit 2022 and the signal processing unit 2025 are circuit units for acquiring gradation information. Therefore, when only the event information is acquired, the drive unit 2022 and the signal processing unit 2025 may be omitted.
- the read area selection unit 2027 selects a part of the plurality of pixels 2030 included in the pixel array unit 2021. Specifically, the read area selection unit 2027 determines the selection area in response to a request from each pixel 2030 of the pixel array unit 2021. For example, the read area selection unit 2027 selects any one or a plurality of rows included in the structure of the two-dimensional matrix corresponding to the pixel array unit 2021. The read area selection unit 2027 sequentially selects one or a plurality of rows according to a preset period. Further, the read area selection unit 2027 may determine the selection area in response to a request from each pixel 2030 of the pixel array unit 2021.
- the signal generation unit 2028 generates an event signal corresponding to the active pixel that has detected an event among the selected pixels, based on the output signal of the pixel selected by the read area selection unit 2027.
- An event is an event in which the intensity of light changes.
- the active pixel is a pixel in which the amount of change in the intensity of light corresponding to the output signal exceeds or falls below a preset threshold value.
- the signal generation unit 2028 compares the output signal of a pixel with a reference signal, detects an active pixel that outputs an output signal when it is larger or smaller than the reference signal, and generates an event signal corresponding to the active pixel. ..
- the signal generation unit 2028 can be configured to include, for example, a column selection circuit for arbitrating the signal entering the signal generation unit 2028. Further, the signal generation unit 2028 can be configured to output not only the information of the active pixel in which the event is detected but also the information of the inactive pixel in which the event is not detected.
- the signal generation unit 2028 outputs the address information and the time stamp information (for example, (X, Y, T)) of the active pixel that detected the event through the output line 2015.
- the data output from the signal generation unit 2028 may be not only address information and time stamp information but also frame format information (for example, (0, 0, 1, 0, ...)). ..
- the distance measuring system is a system for measuring the distance to a subject by using a structured light method technique.
- the ranging system can also be used as a system for acquiring a three-dimensional (3D) image, and in this case, it can be referred to as a three-dimensional image acquisition system.
- 3D three-dimensional
- the structured light method distance measurement is performed by identifying the coordinates of a point image and which light source (so-called point light source) the point image is projected from by pattern matching.
- FIG. 22 is a schematic diagram showing an example of the configuration of the ranging system according to the embodiment of the present disclosure
- FIG. 23 is a block diagram showing an example of the circuit configuration.
- the ranging system 3000 uses a surface emitting semiconductor laser, for example, a vertical cavity type surface emitting laser (VCSEL) 3010 as a light source unit, and an event detection sensor 3020 called EVS as a light receiving unit.
- the vertical cavity type surface emitting laser (VCSEL) 3010 projects a predetermined pattern of light onto the subject 3100.
- the camera side optical system 3070 is provided.
- the system control unit 3030 is composed of, for example, a processor (CPU), drives a vertical resonator type surface emitting laser 3010 via a light source drive unit 3040, and drives an event detection sensor 3020 via a sensor control unit 3050. .. More specifically, the system control unit 3030 controls the vertical resonator type surface emitting laser 3010 in synchronization with the event detection sensor 3020.
- the light of a predetermined pattern emitted from the vertical resonator type surface emitting laser 3010 passes through the light source side optical system 3060 and is a subject (measurement target). Object) Projected to 3100. This projected light is reflected by the subject 3100. Then, the light reflected by the subject 3100 passes through the camera-side optical system 3070 and is incident on the event detection sensor 3020.
- the event detection sensor 3020 receives the light reflected by the subject 3100 and detects that the change in the brightness of the pixel exceeds a predetermined threshold value as an event.
- the event information detected by the event detection sensor 3020 is supplied to the application processor 3200 external to the ranging system 3000.
- the application processor 3200 performs predetermined processing on the event information detected by the event detection sensor 3020.
- the present technology can also have the following configurations.
- a light receiving board having a plurality of light receiving circuits provided with photoelectric conversion elements, A circuit board joined to the light receiving board and having a plurality of address event detection circuits for detecting voltage changes output from the photoelectric conversion elements of the plurality of light receiving circuits, respectively. Equipped with The circuit board is The first element region in which the first transistor driven by the first voltage is arranged, and A second element region in which a second transistor driven by a second voltage lower than the first voltage is arranged, and Have, A solid-state image sensor in which an FTI (Full Trench Isolation) structure is arranged between the first element region and the second element region adjacent to each other.
- FTI Full Trench Isolation
- the solid-state image pickup device according to any one of (1) to (5) above, wherein the light receiving substrate and the circuit board are directly bonded to each other.
- the solid-state image pickup device according to any one of (1) to (5) above, wherein the light receiving substrate and the circuit board are connected to each other by a via.
- the second element region has a second well region of the first conductive type and a third well region of the second conductive type.
- the solid-state image sensor is A light receiving board having a plurality of light receiving circuits provided with photoelectric conversion elements, A circuit board joined to the light receiving board and having a plurality of address event detection circuits for detecting voltage changes output from the photoelectric conversion elements of the plurality of light receiving circuits, respectively.
- a signal processing unit that processes the output of the solid-state image sensor, and Have The circuit board is The first element region in which the first transistor driven by the first voltage is arranged, and A second element region in which a second transistor driven by a second voltage lower than the first voltage is arranged, and Have, An image pickup device in which an FTI (Full Trench Isolation) structure is arranged between the first element region and the second element region adjacent to each other.
- FTI Full Trench Isolation
- the image pickup apparatus according to any one of (9) to (13), wherein the light receiving substrate and the circuit board are directly joined to each other by wiring.
- the image pickup apparatus according to any one of (9) to (13), wherein the light receiving substrate and the circuit board are connected to each other by a via.
- the second element region has a second well region of the first conductive type and a third well region of the second conductive type.
- the image pickup apparatus according to any one of (9) to (15) above, wherein another FTI structure is arranged between the second well region and the third well region adjacent to each other.
- Image sensor 110 Lens 130 Control unit 200
- Solid-state image sensor 201 Light-receiving board 202 Circuit board 202b Semiconductor layer 202c Insulation layer 211
- Light-receiving circuit 231 Address event detection circuit 310 Effective pixel 311 Photodiode (an example of photoelectric conversion element) 501 First element region 502 Second element region 511 N-well region (an example of the first well region) 512 P-well area (an example of the second well area) 513 N-well area (an example of a third well area) 521, 523 FTI structure 522 STI structure 531 Via T1 First transistor T2 Second transistor VDD1 First voltage VDD2 Second voltage
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Abstract
Description
最初に、実施形態に係る撮像装置100の構成について、図1を参照しながら説明する。図1は、本開示の実施形態に係る撮像装置100の一構成例を示すブロック図である。
つづいて、実施形態に係る固体撮像素子200の構成について、図2~図9を参照しながら説明する。図2は、本開示の実施形態に係る固体撮像素子200の積層構造を説明するための図である。
Qinit=C1×Vinit ・・(1)
Qafter=C1×Vafter ・・(2)
Q2=-C2×Vout ・・(3)
Qinit=Qafter+Q2 ・・(4)
Vout=-(C1/C2)×(Vafter-Vinit) ・・(5)
つづいて、実施形態に係る回路基板202の詳細な構成について、図10および図11を参照しながら説明する。図10は、本開示の実施形態に係る固体撮像素子200の断面構成を示す図である。
つづいて、実施形態の各種変形例について、図12~図18を参照しながら説明する。図12は、本開示の実施形態の変形例1に係る固体撮像素子200の断面構成を示す図であり、図13は、本開示の実施形態の変形例2に係る固体撮像素子200の断面構成を示す図である。
図14は、本開示の実施形態の変形例3に係る固体撮像素子200の断面構成を示す図である。かかる変形例3では、回路基板202における一部の構成が実施形態と異なる。
図15は、本開示の実施形態の変形例4に係る固体撮像素子200の断面構成を示す図であり、図16は、本開示の実施形態の変形例5に係る固体撮像素子200の断面構成を示す図である。
図17は、本開示の実施形態の変形例6に係る固体撮像素子200の断面構成を示す図である。かかる変形例6では、第2の素子領域502の内部構成が実施形態と異なる。
図18は、本開示の実施形態の変形例8に係る固体撮像素子200の断面構成を示す図である。かかる変形例7では、受光基板201に対して接合する際の回路基板202の向きが実施形態と異なる。
図19は、本開示の実施形態の変形例8に係る有効画素310の回路構成を示す図であり、選択されたオンイベントおよびオフイベントのいずれか一方の有無を検出する量子化器350について示している。
実施形態に係る固体撮像素子200は、受光基板201と、回路基板202とを備える。受光基板201は、光電変換素子(フォトダイオード311)が設けられる受光回路211を複数有する。回路基板202は、受光基板201に接合され、複数の受光回路211の光電変換素子(フォトダイオード311)から出力される電圧変化をそれぞれ検出する複数のアドレスイベント検出回路231を有する。また、回路基板202は、第1の素子領域501と、第2の素子領域502とを有する。第1の素子領域501には、第1の電圧VDD1で駆動する第1のトランジスタT1が配置される。第2の素子領域502には、第1の電圧VDD1よりも低い第2の電圧VDD2で駆動する第2のトランジスタT2が配置される。そして、互いに隣接する第1の素子領域501と第2の素子領域502との間に、FTI(Full Trench Isolation)構造521が配置される。
図20は、アドレスイベント検出部1000の第2構成例を示すブロック図である。図20に示すように、本構成例に係るアドレスイベント検出部1000は、電流電圧変換部1331、バッファ1332、減算器1333、量子化器1334、及び、転送部1335の他に、記憶部1336及び制御部1337を有する構成となっている。
上述した第1構成例に係る撮像装置100は、非同期型の読出し方式にてイベントを読み出す非同期型の撮像装置である。但し、イベントの読出し方式としては、非同期型の読出し方式に限られるものではなく、同期型の読出し方式であってもよい。同期型の読出し方式が適用される撮像装置は、所定のフレームレートで撮像を行う通常の撮像装置と同じ、スキャン方式の撮像装置である。
本開示の実施形態に係る測距システムは、ストラクチャード・ライト方式の技術を用いて、被写体までの距離を測定するためのシステムである。また、本開示の実施形態に係る測距システムは、三次元(3D)画像を取得するシステムとして用いることもでき、この場合には、三次元画像取得システムということができる。ストラクチャード・ライト方式では、点像の座標とその点像がどの光源(所謂、点光源)から投影されたものであるかをパターンマッチングで同定することによって測距が行われる。
(1)
光電変換素子が設けられる受光回路を複数有する受光基板と、
前記受光基板に接合され、前記複数の受光回路の前記光電変換素子から出力される電圧変化をそれぞれ検出する複数のアドレスイベント検出回路を有する回路基板と、
を備え、
前記回路基板は、
第1の電圧で駆動する第1のトランジスタが配置される第1の素子領域と、
前記第1の電圧よりも低い第2の電圧で駆動する第2のトランジスタが配置される第2の素子領域と、
を有し、
互いに隣接する前記第1の素子領域と前記第2の素子領域との間に、FTI(Full Trench Isolation)構造が配置される
固体撮像素子。
(2)
前記FTI構造における光入射側とは反対側の端部は、絶縁層に接する
前記(1)に記載の固体撮像素子。
(3)
前記FTI構造における光入射側とは反対側の端部の一部は、前記絶縁層に接する
前記(2)に記載の固体撮像素子。
(4)
前記FTI構造における光入射側とは反対側の端部は、前記第1の素子領域内に位置する第1のウェル領域とは異なる導電型のウェル層に接する
前記(1)に記載の固体撮像素子。
(5)
前記FTI構造における光入射側とは反対側の端部の一部は、前記ウェル層に接する
前記(4)に記載の固体撮像素子。
(6)
前記受光基板と、前記回路基板とは、配線同士が直接接合されている
前記(1)~(5)のいずれか一つに記載の固体撮像素子。
(7)
前記受光基板と、前記回路基板とは、配線同士がビアによって接続されている
前記(1)~(5)のいずれか一つに記載の固体撮像素子。
(8)
前記第2の素子領域は、第1導電型の第2のウェル領域と、第2導電型の第3のウェル領域とを有し、
互いに隣接する前記第2のウェル領域と前記第3のウェル領域との間に、別のFTI構造が配置される
前記(1)~(7)のいずれか一つに記載の固体撮像素子。
(9)
レンズと、
固体撮像素子と、
前記固体撮像素子を制御する制御部と、を備え、
前記固体撮像素子は、
光電変換素子が設けられる受光回路を複数有する受光基板と、
前記受光基板に接合され、前記複数の受光回路の前記光電変換素子から出力される電圧変化をそれぞれ検出する複数のアドレスイベント検出回路を有する回路基板と、
前記固体撮像素子の出力を信号処理する信号処理部と、
を有し、
前記回路基板は、
第1の電圧で駆動する第1のトランジスタが配置される第1の素子領域と、
前記第1の電圧よりも低い第2の電圧で駆動する第2のトランジスタが配置される第2の素子領域と、
を有し、
互いに隣接する前記第1の素子領域と前記第2の素子領域との間に、FTI(Full Trench Isolation)構造が配置される
撮像装置。
(10)
前記FTI構造における光入射側とは反対側の端部は、絶縁層に接する
前記(9)に記載の撮像装置。
(11)
前記FTI構造における光入射側とは反対側の端部の一部は、前記絶縁層に接する
前記(10)に記載の撮像装置。
(12)
前記FTI構造における光入射側とは反対側の端部は、前記第1の素子領域内に位置する第1のウェル領域とは異なる導電型のウェル層に接する
前記(9)に記載の撮像装置。
(13)
前記FTI構造における光入射側とは反対側の端部の一部は、前記ウェル層に接する
前記(12)に記載の撮像装置。
(14)
前記受光基板と、前記回路基板とは、配線同士が直接接合されている
前記(9)~(13)のいずれか一つに記載の撮像装置。
(15)
前記受光基板と、前記回路基板とは、配線同士がビアによって接続されている
前記(9)~(13)のいずれか一つに記載の撮像装置。
(16)
前記第2の素子領域は、第1導電型の第2のウェル領域と、第2導電型の第3のウェル領域とを有し、
互いに隣接する前記第2のウェル領域と前記第3のウェル領域との間に、別のFTI構造が配置される
前記(9)~(15)のいずれか一つに記載の撮像装置。
110 レンズ
130 制御部
200 固体撮像素子
201 受光基板
202 回路基板
202b 半導体層
202c 絶縁層
211 受光回路
231 アドレスイベント検出回路
310 有効画素
311 フォトダイオード(光電変換素子の一例)
501 第1の素子領域
502 第2の素子領域
511 Nウェル領域(第1のウェル領域の一例)
512 Pウェル領域(第2のウェル領域の一例)
513 Nウェル領域(第3のウェル領域の一例)
521、523 FTI構造
522 STI構造
531 ビア
T1 第1のトランジスタ
T2 第2のトランジスタ
VDD1 第1の電圧
VDD2 第2の電圧
Claims (9)
- 光電変換素子が設けられる受光回路を複数有する受光基板と、
前記受光基板に接合され、前記複数の受光回路の前記光電変換素子から出力される電圧変化をそれぞれ検出する複数のアドレスイベント検出回路を有する回路基板と、
を備え、
前記回路基板は、
第1の電圧で駆動する第1のトランジスタが配置される第1の素子領域と、
前記第1の電圧よりも低い第2の電圧で駆動する第2のトランジスタが配置される第2の素子領域と、
を有し、
互いに隣接する前記第1の素子領域と前記第2の素子領域との間に、FTI(Full Trench Isolation)構造が配置される
固体撮像素子。 - 前記FTI構造における光入射側とは反対側の端部は、絶縁層に接する
請求項1に記載の固体撮像素子。 - 前記FTI構造における光入射側とは反対側の端部の一部は、前記絶縁層に接する
請求項2に記載の固体撮像素子。 - 前記FTI構造における光入射側とは反対側の端部は、前記第1の素子領域内に位置する第1のウェル領域とは異なる導電型のウェル層に接する
請求項1に記載の固体撮像素子。 - 前記FTI構造における光入射側とは反対側の端部の一部は、前記ウェル層に接する
請求項4に記載の固体撮像素子。 - 前記受光基板と、前記回路基板とは、配線同士が直接接合されている
請求項1に記載の固体撮像素子。 - 前記受光基板と、前記回路基板とは、配線同士がビアによって接続されている
請求項1に記載の固体撮像素子。 - 前記第2の素子領域は、第1導電型の第2のウェル領域と、第2導電型の第3のウェル領域とを有し、
互いに隣接する前記第2のウェル領域と前記第3のウェル領域との間に、別のFTI構造が配置される
請求項1に記載の固体撮像素子。 - レンズと、
固体撮像素子と、
前記固体撮像素子を制御する制御部と、を備え、
前記固体撮像素子は、
光電変換素子が設けられる受光回路を複数有する受光基板と、
前記受光基板に接合され、前記複数の受光回路の前記光電変換素子から出力される電圧変化をそれぞれ検出する複数のアドレスイベント検出回路を有する回路基板と、
前記固体撮像素子の出力を信号処理する信号処理部と、
を有し、
前記回路基板は、
第1の電圧で駆動する第1のトランジスタが配置される第1の素子領域と、
前記第1の電圧よりも低い第2の電圧で駆動する第2のトランジスタが配置される第2の素子領域と、
を有し、
互いに隣接する前記第1の素子領域と前記第2の素子領域との間に、FTI(Full Trench Isolation)構造が配置される
撮像装置。
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JP2007005806A (ja) * | 2005-06-23 | 2007-01-11 | Samsung Electronics Co Ltd | 半導体集積回路素子及びその製造方法 |
JP2019195135A (ja) * | 2018-05-02 | 2019-11-07 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および撮像装置 |
WO2019220810A1 (ja) * | 2018-05-16 | 2019-11-21 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および固体撮像装置 |
JP2020127124A (ja) * | 2019-02-04 | 2020-08-20 | キヤノン株式会社 | 撮像素子及びその制御方法、及び撮像装置 |
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JP2007005806A (ja) * | 2005-06-23 | 2007-01-11 | Samsung Electronics Co Ltd | 半導体集積回路素子及びその製造方法 |
JP2019195135A (ja) * | 2018-05-02 | 2019-11-07 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および撮像装置 |
WO2019220810A1 (ja) * | 2018-05-16 | 2019-11-21 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および固体撮像装置 |
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