KR20220125681A - 스테이지 장치, 리소그래피 장치 및 물품 제조 방법 - Google Patents

스테이지 장치, 리소그래피 장치 및 물품 제조 방법 Download PDF

Info

Publication number
KR20220125681A
KR20220125681A KR1020220024750A KR20220024750A KR20220125681A KR 20220125681 A KR20220125681 A KR 20220125681A KR 1020220024750 A KR1020220024750 A KR 1020220024750A KR 20220024750 A KR20220024750 A KR 20220024750A KR 20220125681 A KR20220125681 A KR 20220125681A
Authority
KR
South Korea
Prior art keywords
stage
interferometer
scale
optical assembly
axis direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020220024750A
Other languages
English (en)
Korean (ko)
Inventor
사토시 이와타니
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20220125681A publication Critical patent/KR20220125681A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
    • G01B9/02019—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different points on same face of object
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/03—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring coordinates of points
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
    • G01B9/02021—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different faces of object, e.g. opposite faces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02027—Two or more interferometric channels or interferometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02055—Reduction or prevention of errors; Testing; Calibration
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/12—Reflex reflectors
    • G02B5/122—Reflex reflectors cube corner, trihedral or triple reflector type
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1809—Diffraction gratings with pitch less than or comparable to the wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2290/00—Aspects of interferometers not specifically covered by any group under G01B9/02
    • G01B2290/15—Cat eye, i.e. reflection always parallel to incoming beam
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020220024750A 2021-03-05 2022-02-25 스테이지 장치, 리소그래피 장치 및 물품 제조 방법 Ceased KR20220125681A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021035636A JP7625444B2 (ja) 2021-03-05 2021-03-05 ステージ装置、リソグラフィー装置および物品製造方法
JPJP-P-2021-035636 2021-03-05

Publications (1)

Publication Number Publication Date
KR20220125681A true KR20220125681A (ko) 2022-09-14

Family

ID=81326231

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020220024750A Ceased KR20220125681A (ko) 2021-03-05 2022-02-25 스테이지 장치, 리소그래피 장치 및 물품 제조 방법

Country Status (6)

Country Link
US (1) US12386274B2 (https=)
EP (2) EP4273597A3 (https=)
JP (1) JP7625444B2 (https=)
KR (1) KR20220125681A (https=)
CN (1) CN115097697A (https=)
TW (1) TWI853218B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7625444B2 (ja) 2021-03-05 2025-02-03 キヤノン株式会社 ステージ装置、リソグラフィー装置および物品製造方法
TWI866681B (zh) * 2023-12-08 2024-12-11 均華精密工業股份有限公司 同向式多軸作業設備

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07270122A (ja) * 1994-03-30 1995-10-20 Canon Inc 変位検出装置、該変位検出装置を備えた露光装置およびデバイスの製造方法
US5757160A (en) * 1996-12-23 1998-05-26 Svg Lithography Systems, Inc. Moving interferometer wafer stage
JP2004510129A (ja) * 2000-05-17 2004-04-02 ザイゴ　コーポレイション 干渉装置および干渉方法
TW527526B (en) 2000-08-24 2003-04-11 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP3762307B2 (ja) * 2001-02-15 2006-04-05 キヤノン株式会社 レーザ干渉干渉計システムを含む露光装置
JP4429037B2 (ja) * 2004-02-27 2010-03-10 キヤノン株式会社 ステージ装置及びその制御方法
EP1931947A2 (en) * 2005-09-21 2008-06-18 Koninklijke Philips Electronics N.V. System for detecting motion of a body
TWI605491B (zh) * 2006-01-19 2017-11-11 尼康股份有限公司 曝光裝置及曝光方法、以及元件製造方法
US7636165B2 (en) * 2006-03-21 2009-12-22 Asml Netherlands B.V. Displacement measurement systems lithographic apparatus and device manufacturing method
US8194232B2 (en) 2007-07-24 2012-06-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
WO2009098891A1 (ja) * 2008-02-08 2009-08-13 Nikon Corporation 位置計測システム及び位置計測方法、移動体装置、移動体駆動方法、露光装置及び露光方法、パターン形成装置、並びにデバイス製造方法
JP2009302490A (ja) * 2008-06-17 2009-12-24 Canon Inc 露光装置及びデバイス製造方法
EP2553401B1 (en) * 2010-03-30 2015-09-02 Zygo Corporation Interferometric encoder systems
US8829420B2 (en) * 2010-06-09 2014-09-09 Nikon Corporation Two dimensional encoder system and method
JP2013101084A (ja) 2011-11-09 2013-05-23 Nikon Corp 位置検出方法及び装置、エンコーダ装置、並びに露光装置
JP2014086476A (ja) * 2012-10-22 2014-05-12 Canon Inc リソグラフィー装置、それを用いた物品の製造方法
JP6094313B2 (ja) * 2013-03-28 2017-03-15 株式会社ニコン エンコーダ、駆動装置、ステージ装置及び露光装置
EP3207339B1 (en) * 2014-10-13 2019-07-24 Zygo Corporation Interferometric encoder systems
JP7625444B2 (ja) 2021-03-05 2025-02-03 キヤノン株式会社 ステージ装置、リソグラフィー装置および物品製造方法

Also Published As

Publication number Publication date
CN115097697A (zh) 2022-09-23
US12386274B2 (en) 2025-08-12
EP4273597A3 (en) 2023-11-29
US20220283518A1 (en) 2022-09-08
JP7625444B2 (ja) 2025-02-03
EP4273597A2 (en) 2023-11-08
EP4053497A1 (en) 2022-09-07
TWI853218B (zh) 2024-08-21
TW202236028A (zh) 2022-09-16
JP2022135679A (ja) 2022-09-15
EP4053497B1 (en) 2023-09-20

Similar Documents

Publication Publication Date Title
US6285444B1 (en) Positioning system and position measuring method for use in exposure apparatus
US6285457B2 (en) Exposure apparatus and device manufacturing method including measuring position and/or displacement of each of a base and a stage with respect to a support
JP6566389B2 (ja) 露光装置及び露光方法、並びにデバイス製造方法
JP5131281B2 (ja) 露光装置及び露光方法、並びにデバイス製造方法
US10697805B2 (en) Encoder device, method for measuring moving amount, optical apparatus, exposure apparatus, exposure method and method for producing device
KR20150023781A (ko) 노광 방법, 노광 장치, 및 디바이스 제조 방법
KR20100124245A (ko) 위치 계측 시스템 및 위치 계측 방법, 이동체 장치, 이동체 구동 방법, 노광 장치 및 노광 방법, 패턴 형성 장치, 그리고 디바이스 제조 방법
JP6767682B2 (ja) エンコーダ装置及び露光装置
JP2013506972A (ja) 露光装置及び露光方法、並びにデバイス製造方法
TWI853218B (zh) 載台裝置、微影設備、及物品製造方法
JP6680997B2 (ja) エンコーダ装置及びその使用方法、光学装置、露光装置、並びにデバイス製造方法
JP4424739B2 (ja) ステージ装置
JP2013101084A (ja) 位置検出方法及び装置、エンコーダ装置、並びに露光装置
HK1171817A (en) Exposure apparatus, exposure method, and device manufacturing method

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20220225

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20241118

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20250129

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D