KR20220058728A - Method for processing a boron selective adsorption resin for use in the production of ultrapure water - Google Patents

Abstract

The present invention relates to a processing method of a boron selective adsorption resin used for preparing ultrapure water, and more specifically, to a processing method of a boron selective adsorption resin which has low total organic carbon (TOC) elution, high resistivity, low resistivity reduction even during long-term storage, and excellent boron removal efficiency.

Description

Method for processing a boron selective adsorption resin for use in the production of ultrapure water

The present invention relates to a method of processing a boron selective adsorption resin used for the production of ultrapure water, and more specifically, to a low total organic carbon (TOC) elution, a high resistivity value, a low resistivity reduction rate even during long-term storage, and boron It relates to a processing method of a boron-selective adsorption resin that is processed to have excellent removal efficiency.

In the field of semiconductor manufacturing, along with the high integration of semiconductor devices, a significant increase in purity has been required along with production machinery, gases, and chemicals used in the manufacturing process. There is a demand for very high-purity water. The demand for high purity of water is expected to increase further in the future, and in this process, particles and colloidal substances that have not received much attention until now are attracting attention as new substances to be removed, such as ultra-trace impurities, such as boron. can be heard

Boron is an element that is difficult to measure in trace amounts, and it is not clear whether boron is included in ultrapure water manufactured using various devices to remove ionic or non-ionic substances, so it has not been paid attention as an evaluation item for water quality of ultrapure water in the past. However, with the development of measurement technology, in recent years, as a result of being able to detect the presence of impurities at the ppt level, it has become clear that boron is included in the manufactured ultrapure water depending on the quality of the raw water used and the configuration of the manufacturing equipment, such as ultrapure water.

In addition, when such boron is used while being contained in a significant amount in ultrapure water, for example, when it is used as washing water in a semiconductor device manufacturing process for a long period of time, boron adheres to the wafer surface at a high concentration, resulting in damage to the semiconductor device. There was a problem that the fear of damaging the characteristics could not be ignored.

For this reason, as it is recognized that it is very important to remove boron from ultrapure water, a method for removing boron using a reverse osmosis membrane or a method for removing boron using a boron selective adsorption resin has been studied. The boric acid ion is selectively combined with a polyhydric alcohol having a plurality of hydroxyl groups, saccharides, cellulose, and the like to form a boric acid complex. There is a method for quantifying boron using a complex-forming reaction with borate ions using mannitol, a type of saccharide, and it is also known that a polysaccharide polymer using dextran gel as a parent adsorbs boron. As a boron selective adsorption resin into which a polyhydric alcohol is introduced, for example, a copolymer of styrene and divinylbenzene having a glucamine structure bonded thereto is commercially available. When ultrapure water is treated using such a commercially available boron selective adsorption resin, organic carbon at a level of ppb (part per billion) to ppm (part per million) is eluted from the boron selective adsorption resin. Ultrapure water used for cleaning silicon substrates for semiconductors is required to have a boron concentration of 10 ng/L (10 ppt) or less and a specific resistance of 18 MΩ·cm or more. By incorporating a boron selective adsorption resin into a primary pure water device or subsystem to remove trace boron, the boron concentration can be reduced, but the organic carbon eluted above 1 μg/L (1 ppb) and the eluted organic carbon is Since it is not removed in the subsystem, there is a problem in that the specific resistance of the ultrapure water at the end is lowered. Japanese Patent Laid-Open No. 8-238478 discloses, as a method of reducing the amount of TOC elution from a boron-selective ion exchange resin used in combination with an ultrapure water production apparatus, the boron-selective adsorption resin is adjusted to a free base type, and a strong basic exchanger is converted into a salt type. A method of adjusting and using it has been proposed. However, in this method, the boron selective adsorption resin is brought into contact with an aqueous solution of sodium hydroxide and then brought into contact with an aqueous solution of sodium bicarbonate, etc. There is a problem with losing.

In Japanese Patent Laid-Open Publication No. 13-017866, as a method of reducing the amount of TOC elution from a boron-selective ion exchange resin, a low-concentration aqueous alkali metal hydroxide solution and ultrapure water are passed downstream at a high temperature using a column method using a boron-selective adsorption resin. A method is proposed. However, in this method, the strong base component that causes TOC elution remains after processing, and the TOC elution reduction cannot be sufficiently achieved. In addition, if the column method is used at high temperature, there is a stability problem because water must be passed under pressure to prevent bubble generation.

In Japanese Patent Application Laid-Open No. Hei 19-313506, a boron selective adsorption resin is treated with a low-concentration aqueous alkali metal hydroxide solution at a high temperature and then washed with water and alcohol mixed solvent to reduce washing time and reduce TOC elution. A method for preparing a resin has been proposed. However, this method has a problem in that the long-term stability of the resin is lowered because the specific resistance of the resin is lowered according to the change with time.

For this reason, a manufacturing method that reduces the total organic carbon (TOC) elution from the boron selective adsorption resin by simpler treatment, has a high specific resistance, does not decrease the specific resistance even during long-term storage, and has high boron removal efficiency was required.

An object of the present invention is to provide a method of processing a boron-selective adsorption resin that is processed to have low total organic carbon (TOC) elution, high specific resistance, low resistivity reduction rate even during long-term storage, and excellent boron removal efficiency. will be.

In order to solve the above technical problem, the present invention provides a method comprising: (a) heat-treating a boron-selective adsorption resin having an aminopolyol group as a functional group in an aqueous alcohol solution; (b) repeating the process of contacting the boron selective adsorption resin heat-treated with the aqueous alcohol solution into an aqueous alkali metal hydroxide solution in a batch manner, and washing with ultrapure water a plurality of times; (c) heat-treating the boron selective adsorption resin treated in step (b) in ultrapure water; and (d) passing the boron selective adsorption resin through the column with an aqueous alkali metal hydroxide solution and washing with ultrapure water.

According to another aspect of the present invention, there is provided a boron selective adsorption resin processed according to the method of the present invention.

The boron selective adsorption resin processed according to the method of the present invention has low total organic carbon (TOC) elution, high resistivity, low resistivity reduction rate even during long-term storage, and excellent boron removal efficiency. Compared to the prepared boron-selective adsorption resin, it exhibits a significantly superior effect.

Hereinafter, the present invention will be described in more detail.

A method of processing a boron selective adsorption resin according to the present invention comprises the steps of: (a) heat-treating a boron selective adsorption resin having an aminopolyol group as a functional group in an aqueous alcohol solution; (b) repeating the process of contacting the boron selective adsorption resin heat-treated with the aqueous alcohol solution into an aqueous alkali metal hydroxide solution in a batch manner, and washing with ultrapure water a plurality of times; (c) heat-treating the boron selective adsorption resin treated in step (b) in ultrapure water; and (d) passing the boron selective adsorption resin through the column with an aqueous alkali metal hydroxide solution and washing with ultrapure water.

The boron selective adsorption resin processed according to the method of the present invention has a low total organic carbon (TOC) elution, so it is possible to stably obtain ultrapure water with a total organic carbon (TOC) of 1 μg/liter (ppb) or less, and has a specific resistance of 18.15 ㏁.cm above, the specific resistance reduction rate is 10% or less even during long-term storage (based on 2 months), and ultrapure water with a boron concentration of 15 ng/liter (ppt) or less that can be used as ultrapure water for semiconductor manufacturing can be produced.

The amino polyol group serving as the functional group includes an N-methyl-D-glucamine group, a 2-amino-2-(hydroxymethyl)-1,3-propanediol group, and a 2-amino-2-methyl-1,3-propane group. Diol group, 2-amino-1,3-propanediol group, 3-amino-1,2-propanediol group, 3-dimethylamino-1,2-propanediol group and 3-diethyl amino-1,2- It may be at least one selected from the group consisting of propanediol groups. Among these, the N-methyl-D-glucamine group is particularly preferable from the viewpoint of having a high boron adsorption function.

Although not particularly limited, the boron-selective adsorption resin of step (a) may be a styrene-divinylbenzene cross-polymer, and may be a boron-selective adsorption resin having the aminopolyol group.

The aqueous alcohol solution may include any one or more alcohols selected from the group consisting of alcohols represented by the formula R ₁ -OH (R ₁ is an aliphatic alkyl group having 1 to 8 carbon atoms), for example, methanol, ethanol, propanol, butanol. , may include any one or more alcohols selected from the group consisting of pentanol, hexanol, heptanol and octanol. Among these, methanol can be used suitably.

The alcohol concentration of the aqueous alcohol solution in step (a) may be 50 wt% or more, 60 wt% or more, 70 wt% or more, or 80 wt% or more, and 100 wt% or less, 90 wt% or less, or 85 wt% or less and, for example, may be 50 to 100% by weight, 60 to 90% by weight, or 70 to 90% by weight.

The heating temperature in step (a) may be 50 °C or higher, 60 °C or higher, 70 °C or higher, or 80 °C or higher, and 120 °C or lower, 110 °C or lower, 100 °C or lower, or 90 °C or lower, such as 50 to 120 ℃ or less, 60 to 110 ℃ or less, or 70 to 100 ℃ or less.

In the method of the present invention, in the step (a) heat treatment of the boron selective adsorption resin having an aminopolyol group as a functional group in an aqueous alcohol solution may use both a batch method and a column method, but the boron selective adsorption resin having an alcohol It is preferable to heat it in contact with an aqueous solution.

The alkali metal hydroxide aqueous solution used in step (b) of the method of the present invention may be at least one selected from the group consisting of lithium hydroxide aqueous solution, sodium hydroxide aqueous solution, potassium hydroxide aqueous solution, rubidium hydroxide aqueous solution, and cesium hydroxide aqueous solution. Among these, sodium hydroxide aqueous solution can be used especially suitably.

The concentration of the aqueous alkali metal hydroxide solution used in step (b) may be 2 to 10% by weight, for example, 2 to 8% by weight or 2 to 7% by weight. When the concentration of the alkali metal hydroxide aqueous solution is less than 2 wt%, the total organic carbon removal rate produced is lowered, the long-term stability of specific resistance may decrease, and when it exceeds 10 wt%, it is difficult to obtain an additional improvement effect.

In step (b) of the processing method of the present invention, the boron selective adsorption resin heat-treated with an aqueous alcohol solution is contacted with an aqueous alkali metal hydroxide solution in a batch manner and stirred, the contact solution is drained, and then stirred with ultrapure water to wash the resin. At this time, the alkali metal hydroxide aqueous solution may be 2 to 5 BV, for example, 2 to 3 BV, based on the amount of resin, and the stirring time may be 1 to 5 hours, for example, 1 to 2 hours. The ultrapure water for washing may be 2 to 5 BV, for example, 2 to 3 BV, based on the amount of resin, and the stirring time may be 0.5 to 3 hours, such as 0.5 to 1 hour.

In the step (b) of the processing method of the present invention, the alkali metal hydroxide aqueous solution treatment and ultrapure water washing process are designated as one cycle (cycle), and this process is performed 2 to 5 times in total, for example 2 to 3 times (cycle). can be done repeatedly. When the step (b) is performed less than twice, the TOC removal effect may be lowered, and long-term stability of specific resistance may be poor.

In step (c) of the processing method of the present invention, the boron selective adsorption resin treated in step (b) may be heat-treated in ultrapure water. The ultrapure water may be 2 to 5 BV, such as 2 to 3 BV, based on the amount of resin. The heating temperature may be 70 °C or higher, 80 °C or higher, or 90 °C or higher, and 120 °C or lower, 110 °C or lower, or 100 °C or lower, such as 70 °C to 120 °C, 80 °C to 110 °C or 90 °C to 100 °C. can If the heating temperature is less than 70 ℃, the total organic carbon removal effect may be lowered, if it exceeds 120 ℃, it is difficult to obtain an additional improvement effect.

In step (d) of the processing method of the present invention, the boron selective adsorption resin may be passed through a column with an aqueous alkali metal hydroxide solution, wherein the aqueous alkali metal hydroxide solution may be the same as in step (b). The flow rate may be usually 2 to 5 BV, such as 2 to 4 BV, and the flow rate may be usually SV 0.5 to 3, such as SV 0.5 to 2. Thereafter, all of the alkaline solution may be removed from the resin by washing with ultrapure water, the washing amount may be usually 4BV or more, such as 4 to 8BV, and the flow rate SV is 10 to 30h ^-1 , such as 10 to 20h ^-1 days can

According to another aspect of the present invention, there is provided a boron selective adsorption resin processed according to the method of the present invention.

When ultrapure water is treated using the boron selective adsorption resin processed according to the processing method of the present invention, the elution amount of organic carbon into the treated water is 1 μg/liter (ppb) or less, the specific resistance 18.15 ㏁.cm or more can be maintained, and long-term Even during storage (based on 2 months), the resistivity reduction rate is 10% or less, and the boron concentration in the treated water is 15 ng/liter (ppt) or less.

The boron selective adsorption resin processed according to the method of the present invention has low total organic carbon (TOC) elution, high resistivity, low resistivity reduction rate even during long-term storage, and excellent boron removal efficiency. Compared to the prepared boron-selective adsorption resin, it exhibits a significantly superior effect. When the boron selective adsorption resin processed according to the method of the present invention is used, ultrapure water with high boron removal efficiency can be produced, and thus it can be suitably used in a semiconductor manufacturing process or the like.

Hereinafter, the present invention will be described in more detail through Examples and Comparative Examples. However, the scope of the present invention is not limited by these examples.

[Example]

Example 1

Alcohol contact step for primary TOC removal: step (a)

100 mL of commercially available N-methyl-D-glucamine group-containing boron selective adsorption resin (CLR-B3 by Samyang Corporation) was put into a 1 L reactor, and then, 300 mL of an 80 wt% aqueous solution of methanol was added, and then the temperature was raised to 70 ° C. . After maintaining the temperature for 3 hours, it was cooled to room temperature. Thereafter, after draining the methanol filtrate, 300 ml of ultrapure water was added to the reactor and stirred for 1 hour. Then, after draining the ultrapure water, 300ml of ultrapure water was added to the reactor and stirred for 1 hour.

Sodium hydroxide contact step for secondary TOC removal and resistivity improvement: step (b)

In a 1L reactor, 100 ml of the boron selective adsorption resin from which the primary TOC was removed in step (a) was added, and then 300 mL of a 4 wt% aqueous sodium hydroxide solution was added thereto, followed by stirring for 1 hour. Then, after draining the sodium hydroxide filtrate, 300 ml of ultrapure water was added to the reactor and stirred for 30 minutes. Thereafter, the sodium hydroxide treatment and ultrapure water washing process were further repeated twice, and a total of 3 sodium hydroxide stirring and ultrapure water washing were performed 3 times.

Ultrapure water contact step to remove 3rd TOC and improve resistivity: step (c)

In a 1L reactor, 100ml of the boron selective adsorption resin from which the secondary TOC was removed in step (b) was put, and then 300mL of ultrapure water was added to the reactor, and then the temperature was raised to 100°C. After maintaining the temperature for 10 hours, it was cooled to room temperature. After draining the ultrapure water, 300mL of ultrapure water was added to the reactor and stirred for 30 minutes.

Sodium hydroxide contact and ultrapure water cleaning step to improve resistivity: step (d)

After filling the column (L 500mm XD 20mm) with 100 ml of the boron removal resin from which the 1st to 3rd TOC was removed, a 4 wt% aqueous sodium hydroxide solution was flowed downward at SV = 2 for 1 hour. Then, ultrapure water with a total organic carbon (TOC) of 1 ppb or less and a specific resistance of 18.20 MΩ·cm or more was passed through downflow for 30 minutes at SV = 20 h ^-1 .

Methods for estimating resistivity and total organic carbon (TOC)

Ultrapure water of 0.5 to 1ppb of total organic carbon (TOC) was passed through the column (L 500mm XD 20mm) downflow for 48 hours with SV 30h ^-1 to measure the specific resistance and total organic carbon (TOC) of the treated water flowing out of the column. It was measured and shown in Table 1.

Specific resistance long-term stability evaluation

100 mL of the processed boron-removing resin was sealed in a PP container with excess moisture removed using a centrifuge and stored at room temperature for 2 months.

Method for Assessing Boron Adsorption

After filling the column (L 500mmXD 20mm) with 100ml of the first and second TOC-removed boron-removing resin, 500ppt of boron concentration was passed through the column at SV=30 hr ^-1 . At this time, the boron concentration of the effluent from the column was measured in real time using a boron measuring device (Sievers Boron Analyzer, detection limit of 15 ppt), and is shown in Table 1.

Example 2

It proceeded in the same manner as in Example 1, except that 2% of sodium hydroxide concentration was used in the sodium hydroxide contact step (step (b)) for the secondary TOC removal and specific resistance improvement.

Then, in the same manner as in Example 1, specific resistance, total organic carbon (organic material), specific resistance long-term stability evaluation, and boron adsorption evaluation were measured and shown in Table 1.

Comparative Example 1

100ml of the boron selective adsorption resin from which the primary TOC was removed in Example 1 was put into a 1L reactor, and then an aqueous solution of sodium hydroxide with a concentration of 4% by weight was added, and the temperature was raised to 100°C. After maintaining the temperature for 3 hours, it was cooled to room temperature. After draining the sodium hydroxide filtrate, 300 ml of ultrapure water was added to the reactor and stirred for 1 hour. After draining the ultrapure water, 300ml of ultrapure water was added to the reactor and stirred for 1 hour.

Then, in the same manner as in Example 1, specific resistance, total organic carbon (organic material), specific resistance long-term stability evaluation, and boron adsorption evaluation were measured and shown in Table 1.

Comparative Example 2

It proceeded in the same manner as in Example 1, except that the alcohol contact step (step (a)) for the first TOC removal was not performed.

Then, in the same manner as in Example 1, specific resistance, total organic carbon (organic material), specific resistance long-term stability evaluation, and boron adsorption evaluation were measured and shown in Table 1.

Comparative Example 3

It proceeded in the same manner as in Example 1, except that the sodium hydroxide contact step (step (b)) for removing the secondary TOC and improving the specific resistance was not performed.

Then, in the same manner as in Example 1, specific resistance, total organic carbon (organic material), specific resistance long-term stability evaluation, and boron adsorption evaluation were measured and shown in Table 1.

Comparative Example 4

It proceeded in the same manner as in Example 1, except that the ultrapure water contact step (step (c)) for the third TOC removal and specific resistance improvement was not performed.

Then, in the same manner as in Example 1, specific resistance, total organic carbon (organic material), specific resistance long-term stability evaluation, and boron adsorption evaluation were measured and shown in Table 1.

Comparative Example 5

Specific resistance and total organic carbon (organic material ), specific resistance, long-term stability evaluation, and boron adsorption evaluation were measured and shown in Table 1.

1) Flowing ultrapure water at room temperature down-flow, SV=5 hr ^-1 for 30 minutes,

2) After passing 4% sodium hydroxide aqueous solution down-flow for 60 minutes at SV=3 hr ^-1 ,

3) The boron selective adsorption resin was adjusted by passing ultrapure water down-flow for 60 minutes at SV=10 hr ^-1 .

Comparative Example 6

Specific resistance and total organic carbon (organic) in the same manner as in Example 1, except that the ultrapure water contact step (step (c)) for the third TOC removal and specific resistance improvement was performed as follows by a column method rather than a batch method. , specific resistance, long-term stability evaluation, and boron adsorption evaluation were measured and shown in Table 1.

1) Flowing ultrapure water at room temperature down-flow, SV=5 hr ^-1 for 30 minutes,

2) After heating and washing the resin by passing ultrapure water at 80°C downflow for 600 minutes at SV=0.5 hr ^-1 ,

3) The boron-selective adsorption resin was cooled by passing ultrapure water at room temperature down-flow for 60 minutes at SV=10 hr ^-1 .

Comparative Example 7

It proceeded in the same manner as in Example 1, except that 1% of sodium hydroxide concentration was used in the sodium hydroxide contact step (step (b)) for the secondary TOC removal and specific resistance improvement.

Then, in the same manner as in Example 1, specific resistance, total organic carbon (organic material), specific resistance long-term stability evaluation, and boron adsorption evaluation were measured and shown in Table 1.

Comparative Example 8

In the sodium hydroxide contact step (step (b)) for the secondary TOC removal and resistivity improvement, the same method as in Example 1 was performed, except that the sodium hydroxide treatment and the ultrapure water washing process were performed only once.

Then, in the same manner as in Example 1, specific resistance, total organic carbon (organic material), specific resistance long-term stability evaluation, and boron adsorption evaluation were measured and shown in Table 1.

Comparative Example 9

It proceeded in the same manner as in Example 1, except that the heating temperature was performed at 60° C. in the ultrapure water contact step (step (c)) for the third TOC removal and specific resistance improvement.

Then, in the same manner as in Example 1, specific resistance, total organic carbon (organic material), specific resistance long-term stability evaluation, and boron adsorption evaluation were measured and shown in Table 1.

[Table 1]

[Table 1]

As shown in Table 1, in the case of Examples 1 and 2 according to the present invention, Example 1 performed an alcohol contact step (step (a)) for the primary TOC removal for processing of a boron selective adsorption resin. After that, the sodium hydroxide contact step (step (b)) for removing the secondary TOC and improving the specific resistance value is performed, and the ultrapure water contact step (step (c)) for the third TOC removal and specific resistance value improvement (step (c)) is performed, and the final hydroxide As a result of carrying out the sodium contact and ultrapure water washing step (step (d)), the resistivity and TOC were 18.15 MΩ.cm or more and 1.0 ppb or less, respectively. As a result of evaluating the long-term stability of the resistivity after storing the processed boron-selective adsorption resin for 2 months, the reduction rate compared to the initial stage was 10% or less. The evaluation of boron adsorption was also less than 15 ppt within 1 hour.

In the case of Comparative Example 1, when heat treatment was performed with an aqueous sodium hydroxide solution for TOC removal and specific resistance value improvement, the TOC removal effect was excellent, but as a result of the specific resistance long-term stability evaluation, it was found that the long-term stability was very poor as the specific resistance value decreased by about 83%. can

Comparing Comparative Example 2 and Comparative Examples 3 and 4, the alcohol contact step (step (a)) for the first TOC removal, the sodium hydroxide contact step for the secondary TOC removal and specific resistance improvement (step (b)), It can be seen that the TOC removal effect is sharply reduced if any one of the methods of the third TOC removal and the ultrapure water contact step (step (c)) for improving the specific resistance is excluded.

In the case of Comparative Example 5, the sodium hydroxide contact step (step (b)) for the secondary TOC removal and specific resistance improvement was performed by a column method instead of a batch method. As a result of the evaluation of specific resistance long-term stability, it can be seen that the specific resistance value decreased by about 26%, resulting in poor long-term stability.

In the case of Comparative Example 6, the ultrapure water contact step (step (c)) for the third TOC removal and specific resistance improvement was performed by a column method rather than a batch method. In step (c), as in Example, when ultrapure water of 100°C is used, the column boils, so the temperature of ultrapure water was adjusted to 80°C that can be performed in a column type, and as a result, TOC was 30 ppb It can be seen that the TOC removal effect is low by showing the dissolution.

Comparing Example 1 and Comparative Example 7, when the concentration of sodium hydroxide in the sodium hydroxide contact step (step (b)) for the secondary TOC removal and specific resistance improvement is less than 2%, the TOC removal rate is low, and the long-term of specific resistance It was found that the stability slightly decreased.

In the case of Comparative Example 8, when sodium hydroxide treatment and ultrapure water washing process were carried out only once in the sodium hydroxide contact step (step (b)) for removing the secondary TOC and improving the specific resistance, TOC showed an elution of 20 ppb TOC It can be seen that the removal effect is low, and as a result of the evaluation of specific resistance long-term stability, it can be seen that the long-term stability is deteriorated as the specific resistance value is decreased by about 44%.

In the case of Comparative Example 9, when the heating temperature was carried out at 60° C. in the ultrapure water contact step (step (c)) for the third TOC removal and specific resistance improvement, the TOC showed an elution of 30 ppb, indicating that the TOC removal effect was low. there is.

Therefore, the boron selective adsorption resin processed by the method according to the present invention as in Examples 1 and 2 has low total organic carbon (TOC) elution, high specific resistance, low resistivity reduction rate even during long-term storage, and high boron removal efficiency. It can be seen that it has excellent properties.

Claims (13)

(a) heat-treating a boron selective adsorption resin having an aminopolyol group as a functional group in an aqueous alcohol solution;
(b) repeating the process of contacting the boron selective adsorption resin heat-treated with the aqueous alcohol solution in a batchwise manner with an aqueous alkali metal hydroxide solution and washing with ultrapure water a plurality of times;
(c) heat-treating the boron selective adsorption resin treated in step (b) in ultrapure water; and
(d) passing the boron selective adsorption resin through the column with an aqueous alkali metal hydroxide solution and washing with ultrapure water,
Processing method of boron selective adsorption resin. According to claim 1, wherein the functional amino polyol group is N-methyl-D-glucamine group, 2-amino-2- (hydroxymethyl) -1,3-propanediol group, 2-amino-2-methyl -1,3-propanediol group, 2-amino-1,3-propanediol group, 3-amino-1,2-propanediol group, 3-dimethylamino-1,2-propanediol group and 3-diethyl At least one selected from the group consisting of amino-1,2-propanediol group, a processing method. The processing method according to claim 1, wherein the boron selective adsorption resin of step (a) is a styrene-divinylbenzene crosspolymer. According to claim 1, wherein the alcohol aqueous solution contains any one or more alcohols selected from the group consisting of alcohols represented by the formula R ₁ -OH (R ₁ is an aliphatic alkyl group having 1 to 8 carbon atoms). The processing method according to claim 1, wherein the alcohol concentration of the aqueous alcohol solution in step (a) is 50 to 100% by weight, and the heating temperature is 50 to 120°C. The method according to claim 1, wherein step (a) is performed batchwise. The processing method according to claim 1, wherein the aqueous alkali metal hydroxide solution is at least one selected from the group consisting of an aqueous lithium hydroxide solution, an aqueous sodium hydroxide solution, an aqueous potassium hydroxide solution, an aqueous rubidium hydroxide solution, and an aqueous cesium hydroxide solution. The processing method according to claim 1, wherein the concentration of the aqueous alkali metal hydroxide solution is 2 to 10% by weight. The processing method according to claim 1, wherein the process of contacting the alkali metal hydroxide aqueous solution in step (b) and then washing with ultrapure water is repeated 2 to 5 times. The processing method according to claim 1, wherein the temperature of heating the boron selective adsorption resin in ultrapure water in step (c) is 70°C to 120°C. According to claim 1, wherein in step (d), the flow rate of the alkali metal hydroxide aqueous solution is 2 to 5 BV, the flow rate is SV 0.5 to 3, the washing amount of ultrapure water is 4 to 8 BV, and the flow rate SV is 10 to 30 h ^-1 , processing method. 12. A boron selective adsorption resin processed according to the method according to any one of claims 1 to 11. The boron selective adsorption resin according to claim 12, wherein the specific resistance is 18.15 ㏁.cm or more, and the specific resistance decrease rate after 2 months is 10% or less.