KR102483372B1 - Method for processing a boron selective adsorption resin for use in the production of ultrapure water - Google Patents

Abstract

The present invention relates to a method for processing a boron-selective adsorbent resin used in the production of ultrapure water, and more specifically, the elution of total organic carbon (TOC) is low, the specific resistance value is high, the specific resistance reduction rate is low even during long-term storage, and boron It relates to a method for processing a boron-selective adsorbent resin that is processed to have excellent removal efficiency.

Description

Method for processing a boron selective adsorption resin for use in the production of ultrapure water}

The present invention relates to a method for processing a boron-selective adsorbent resin used in the production of ultrapure water, and more specifically, the elution of total organic carbon (TOC) is low, the specific resistance value is high, the specific resistance reduction rate is low even during long-term storage, and boron It relates to a method for processing a boron-selective adsorbent resin that is processed to have excellent removal efficiency.

In the field of semiconductor manufacturing, with the high degree of integration of semiconductor devices, there has been a demand for significantly higher purity of pure water along with production machines, gases, chemicals, etc. used in the manufacturing process, and Very high purity water is in demand. The demand for high-purification of water is expected to increase even more in the future, and in this process, ultra-trace impurities such as “fine particles and colloidal substances” that have not been “attention” until now are attracting attention as new substances to be removed, and boron is one of those substances. can be heard

Boron is an element that is difficult to measure in trace amounts, and it is not clear whether boron is included in “ultrapure water” that is manufactured using various devices for the removal of “ionic” or “nonionic” substances. Conventionally, it has not been noted as a water quality evaluation item for ultrapure water. However, with the development of measurement technology, it has recently become possible to detect the presence of impurities at the "ppt" level. As a result, it has become clear that boron is contained in the produced "ultrapure water" depending on the quality of the raw water used and the configuration of the production equipment such as "ultrapure water".

In addition, when boron is used while being contained in a significant amount in ultrapure water, for example, when it is used for a long period of time as washing water in the semiconductor device manufacturing process, boron is attached to the wafer surface in high concentration, resulting in the semiconductor device A “problem” occurred in which the possibility of damaging the characteristics could not be ignored.

For this reason, as the removal of boron from ultrapure water is recognized as very important, a method for removing boron using a reverse osmosis membrane or a method for removing boron using a boron-selective adsorption resin has been studied. Boric acid ions form boric acid complexes by selectively combining with polyhydric alcohols, sugars, cellulose, etc. having a plurality of hydroxyl groups. There is a method for quantifying boron using a complex formation reaction with borate ions using mannitol, a type of saccharide, and it is also known that a polysaccharide polymer having a dextran gel as a matrix adsorbs boron. As a boron-selective adsorption resin into which a polyhydric alcohol is introduced, for example, a copolymer of styrene and divinylbenzene bonded to a glucamine structure is commercially available. When ultrapure water is treated using such a commercially available boron-selective adsorption resin, organic carbon at a level of part per billion (ppb) to part per million (ppm) is eluted from the boron-selective adsorption resin. Ultrapure water used for cleaning silicon substrates for semiconductors requires a boron concentration of 10 ng/L (10 ppt) or less and a specific resistance of 18 MΩ cm or more. By incorporating a boron selective adsorption resin into the primary pure water device or subsystem to remove trace amounts of boron, the boron concentration can be reduced, but organic carbon is eluted above 1 μg/L (1 ppb) and the eluted organic carbon is Since it is not removed in the subsystem, there is a problem in that the specific resistance of ultrapure water at the end is lowered. Japanese Patent Laid-open Publication No. 8-238478 discloses a method for reducing the amount of TOC elution from a boron-selective ion-exchange resin used in combination with an ultrapure water production device. A method to adjust and use is proposed. However, in this method, since the boron selective adsorption resin is brought into contact with an aqueous solution of sodium hydroxide and then brought into contact with an aqueous solution of sodium bicarbonate, the adjustment of the boron selective adsorption resin is performed in two steps, which complicates the treatment and generates a large amount of waste liquid. There is a losing problem.

In Japanese Patent Laid-open Publication No. 13-017866, as a method for reducing the amount of TOC elution from a boron-selective ion-exchange resin, a boron-selective adsorption resin is passed through a low-concentration alkali metal hydroxide aqueous solution and ultrapure water at a high temperature by a column method in a downward flow. A method is proposed. However, with this method, strong base components that cause TOC elution remain even after processing, and TOC elution reduction cannot be sufficiently achieved. In addition, when the column method is used at high temperature, there is a safety problem because water must be passed under pressure to prevent the generation of bubbles.

In Japanese Patent Laid-open Publication No. 19-313506, a boron selective adsorption resin is treated with a low-concentration aqueous alkali metal hydroxide solution at high temperature and then washed with a mixed solvent of water and alcohol, thereby reducing the washing time and reducing the TOC elution amount. A method for preparing the resin has been proposed. However, this method has a problem in that the specific resistance of the resin decreases with time and the long-term stability of the resin decreases.

For this reason, there has been a demand for a production method that reduces the total organic carbon (TOC) elution amount from the boron selective adsorption resin by simpler processing, has high specific resistance, does not decrease in specific resistance even during long-term storage, and has high boron removal efficiency.

An object of the present invention is to provide a method for processing a boron-selective adsorbent resin that is processed to have low total organic carbon (TOC) elution, high resistivity, low resistivity decrease even during long-term storage, and excellent boron removal efficiency. will be.

In order to solve the above technical problem, the present invention provides (a) heat treatment of a boron-selective adsorption resin having an aminopolyol group as a functional group in an alcohol aqueous solution; (b) contacting the boron-selective adsorption resin heat-treated with the alcohol aqueous solution with an alkali metal hydroxide aqueous solution in batches, and repeating the process of washing with ultrapure water a plurality of times; (c) heating the boron selective adsorption resin treated in step (b) in ultrapure water; and (d) passing the boron selective adsorption resin through an alkali metal hydroxide aqueous solution in a column and washing the boron selective adsorption resin with ultrapure water.

According to another aspect of the present invention, a boron selective adsorption resin processed according to the method of the present invention is provided.

The boron-selective adsorption resin processed according to the method of the present invention has low elution of total organic carbon (TOC), high resistivity, low resistivity decrease even during long-term storage, and excellent boron removal efficiency. Compared to the prepared boron-selective adsorption resin, it shows a much superior effect.

Hereinafter, the present invention will be described in more detail.

A method for processing a boron selective adsorption resin according to the present invention includes the steps of (a) heating a boron selective adsorption resin having an aminopolyol group as a functional group in an aqueous alcohol solution; (b) contacting the boron-selective adsorption resin heat-treated with the alcohol aqueous solution with an alkali metal hydroxide aqueous solution in batches, and repeating the process of washing with ultrapure water a plurality of times; (c) heating the boron selective adsorption resin treated in step (b) in ultrapure water; and (d) passing water through the boron selective adsorption resin with an alkali metal hydroxide aqueous solution in a column and washing with ultrapure water.

The boron-selective adsorption resin processed according to the method of the present invention has low total organic carbon (TOC) elution and can stably obtain ultrapure water with a total organic carbon (TOC) of 1 μg/liter (ppb) or less, and has a specific resistance of 18.15 MΩ.cm As above, even when stored for a long period of time (based on 2 months), the specific resistance reduction rate is 10% or less, and ultrapure water having a boron concentration of 15 ng/liter (ppt) or less that can be used as ultrapure water for semiconductor manufacturing can be produced.

The aminopolyol group as the above functional group is N-methyl-D-glucamine group, 2-amino-2-(hydroxymethyl)-1,3-propanediol group, 2-amino-2-methyl-1,3-propane Diol group, 2-amino-1,3-propanediol group, 3-amino-1,2-propanediol group, 3-dimethylamino-1,2-propanediol group and 3-diethylamino-1,2- It may be at least one selected from the group consisting of propanediol groups. Among them, an N-methyl-D-glucamine group is particularly preferred from the viewpoint of having a high boron adsorption function.

Although not particularly limited, the boron-selective adsorption resin in step (a) may be a styrene-divinylbenzene crosspolymer or may be a boron-selective adsorption resin having an aminopolyol group.

The aqueous alcohol solution may contain one or more alcohols selected from the group consisting of alcohols represented by the formula R ₁ -OH (R ₁ is an aliphatic alkyl group having 1 to 8 carbon atoms), for example, methanol, ethanol, propanol, butanol , It may include any one or more alcohols selected from the group consisting of pentanol, hexanol, heptanol, and octanol. Among these, methanol can be used suitably.

In the step (a), the alcohol concentration of the aqueous alcohol solution may be 50% by weight or more, 60% by weight or more, 70% by weight or more, or 80% by weight or more, and 100% by weight or less, 90% by weight or less, or 85% by weight or less. And, for example, it may be 50 to 100% by weight, 60 to 90% by weight or 70 to 90% by weight.

The heating temperature in step (a) may be 50 ° C or higher, 60 ° C or higher, 70 ° C or higher or 80 ° C or higher, and may be 120 ° C or lower, 110 ° C or lower, 100 ° C or lower or 90 ° C or lower, for example, 50 to 120 ° C. °C or less, 60 to 110 °C or less, or 70 to 100 °C or less.

In the method of the present invention, in the step (a) of heating the boron selective adsorption resin having an aminopolyol group as a functional group in an alcohol aqueous solution, both batch and column methods can be used, but in the batch method, the boron selective adsorption resin is treated with alcohol It is preferable to heat in contact with an aqueous solution.

The aqueous alkali metal hydroxide solution used in step (b) of the method of the present invention may be at least one selected from the group consisting of an aqueous solution of lithium hydroxide, an aqueous solution of sodium hydroxide, an aqueous solution of potassium hydroxide, an aqueous solution of rubidium hydroxide, and an aqueous solution of cesium hydroxide. Among these, sodium hydroxide aqueous solution can be used especially suitably.

The concentration of the alkali metal hydroxide aqueous solution used in step (b) may be 2 to 10% by weight, for example 2 to 8% by weight or 2 to 7% by weight. When the concentration of the alkali metal hydroxide aqueous solution is less than 2% by weight, the total organic carbon removal rate and long-term stability of resistivity may decrease, and when the concentration exceeds 10% by weight, it is difficult to obtain an additional improvement effect.

In step (b) of the processing method of the present invention, the boron-selective adsorption resin heat-treated with an aqueous alcohol solution is brought into contact with an aqueous alkali metal hydroxide solution in a batchwise manner and stirred, the contact liquid is drained, and then stirred with ultrapure water to wash the resin. At this time, the alkali metal hydroxide aqueous solution may be 2 to 5 BV, for example 2 to 3 BV, based on the amount of resin, and the stirring time may be 1 to 5 hours, for example 1 to 2 hours. The ultrapure water for washing may be 2 to 5 BV, for example 2 to 3 BV, for the resin amount, and the stirring time may be 0.5 to 3 hours, for example 0.5 to 1 hour.

In the step (b) of the processing method of the present invention, the alkali metal hydroxide aqueous solution treatment and ultrapure water washing process are designated as one cycle, and this process is performed a total of 2 to 5 cycles, for example, 2 to 3 cycles can be performed repeatedly. If the step (b) is performed less than twice, the TOC removal effect may be lowered and the long-term stability of specific resistance may be deteriorated.

In step (c) of the processing method of the present invention, the boron selective adsorption resin treated in step (b) may be heated in ultrapure water. The ultrapure water may be 2 to 5 BV, such as 2 to 3 BV for the amount of resin. The heating temperature may be 70°C or higher, 80°C or higher, or 90°C or higher, and may be 120°C or lower, 110°C or lower, or 100°C or lower, such as 70°C to 120°C, 80°C to 110°C, or 90°C to 100°C. can When the heating temperature is less than 70 ° C., the total organic carbon removal effect may be lowered, and when the heating temperature exceeds 120 ° C., it is difficult to obtain an additional improvement effect.

In step (d) of the processing method of the present invention, the boron selective adsorption resin may be passed through an aqueous alkali metal hydroxide solution in a column, wherein the same aqueous alkali metal hydroxide solution as in step (b) may be used. The passing amount may be usually 2 to 5 BV, for example 2 to 4 BV, and the flow rate may be usually SV 0.5 to 3, for example SV 0.5 to 2. Thereafter, the alkali solution may be completely removed from the resin by washing with ultrapure water, and the washing amount may be usually 4 BV or more, for example, 4 to 8 BV, and the flow rate SV is 10 to 30 h ^-1 , for example, 10 to 20 h ^-1 days can

According to another aspect of the present invention, a boron selective adsorption resin processed according to the method of the present invention is provided.

When ultrapure water is treated using the boron-selective adsorption resin processed according to the processing method of the present invention, the elution amount of organic carbon into the treated water can be maintained at 1 μg/liter (ppb) or less and the specific resistance of 18.15 ㏁.cm or more. Even when stored (based on 2 months), the specific resistance reduction rate is 10% or less, and the boron concentration of the treated water is 15 ng/liter (ppt) or less.

The boron-selective adsorption resin processed according to the method of the present invention has low elution of total organic carbon (TOC), high resistivity, low resistivity decrease even during long-term storage, and excellent boron removal efficiency. Compared to the prepared boron-selective adsorption resin, it shows a much superior effect. When the boron-selective adsorption resin processed according to the method of the present invention is used, it is possible to produce ultrapure water of good water quality with high boron removal efficiency, which can be suitably used in semiconductor manufacturing processes and the like.

Hereinafter, the present invention will be described in more detail through Examples and Comparative Examples. However, the scope of the present invention is not limited by these examples.

[Example]

Example 1

Alcohol Contact Step for Primary TOC Removal: Step (a)

100mL of a commercially available boron-selective adsorption resin (Samyang Corporation's CLR-B3) having an N-methyl-D-glucamine group was put into a 1L reactor, then 300mL of an 80% by weight methanol aqueous solution was added, and the temperature was raised to 70°C. . After maintaining the temperature for 3 hours, it was cooled to room temperature. Thereafter, after draining the methanol filtrate, 300 ml of ultrapure water was added to the reactor and stirred for 1 hour. Thereafter, after draining the ultrapure water, 300ml of ultrapure water was additionally added to the reactor and stirred for 1 hour.

Sodium Hydroxide Contact Step for Secondary TOC Removal and Resistivity Improvement: Step (b)

In a 1L reactor, 100 ml of the boron-selective adsorption resin from which the primary TOC was removed in step (a) was added, and then 300 ml of a 4 wt % aqueous solution of sodium hydroxide was added, followed by stirring for 1 hour. Thereafter, after draining the sodium hydroxide filtrate, 300 ml of ultrapure water was added to the reactor and stirred for 30 minutes. Thereafter, the sodium hydroxide treatment and ultrapure water washing process were repeated two more times, and a total of three times of sodium hydroxide stirring and three times of ultrapure water washing was performed.

Ultrapure water contact step for tertiary TOC removal and resistivity improvement: step (c)

In a 1L reactor, 100 ml of the boron-selective adsorption resin from which the secondary TOC was removed in step (b) was put, and then 300 mL of ultrapure water was added to the reactor, and then the temperature was raised to 100°C. After maintaining the temperature for 10 hours, it was cooled to room temperature. After draining the ultrapure water, 300mL of ultrapure water was added to the reactor and stirred for 30 minutes.

Sodium Hydroxide Contact and Ultrapure Water Cleaning Steps to Improve Resistivity: Step (d)

After filling the column (L 500mm XD 20mm) with 100ml of the boron removal resin from which the 1st to 3rd TOC was removed, a 4% by weight aqueous solution of sodium hydroxide was passed in a downward flow at SV = 2 for 1 hour. Subsequently, ultrapure water having a total organic carbon (TOC) of 1 ppb or less and a specific resistance of 18.20 MΩ·cm or more was passed through downwardly at SV = 20 h ^-1 for 30 minutes.

Resistivity and Total Organic Carbon (TOC) Assessment Methods

The total organic carbon (TOC) of 0.5 to 1 ppb of ultrapure water was flowed down the column (L 500mm XD 20mm), and the flow rate was SV 30h ^-1 for 48 hours to improve the resistivity and total organic carbon (TOC) of the treated water flowing out of the column. It was measured and shown in Table 1.

Resistivity long-term stability evaluation

100mL of the processed boron-removed resin was sealed in a PP container with excess water removed using a centrifuge, stored at room temperature for 2 months, and then the resistivity was measured according to the resistivity evaluation method and shown in Table 1.

Boron adsorption evaluation method

After filling the column (L 500mmXD 20mm) with 100ml of boron removal resin from which the first and second TOCs were removed, 500ppt of boron concentration was passed through the column at SV = 30 hr ^-1 . At this time, the boron concentration of the effluent from the column was measured in real time using a boron measuring device (Sievers Boron Analyzer, detection limit 15 ppt) and is shown in Table 1.

Example 2

In the sodium hydroxide contact step (step (b)) for secondary TOC removal and resistivity improvement, the same method as in Example 1 was performed, except that 2% sodium hydroxide concentration was used.

Then, resistivity, total organic carbon (organic matter), resistivity, long-term stability evaluation, and boron adsorption evaluation were measured in the same manner as in Example 1, and are shown in Table 1.

Comparative Example 1

100 ml of the boron-selective adsorption resin from which the primary TOC was removed in Example 1 was put into a 1L reactor, and then a 4% by weight aqueous solution of sodium hydroxide was added thereto, and then the temperature was raised to 100°C. After maintaining the temperature for 3 hours, it was cooled to room temperature. After draining the sodium hydroxide filtrate, 300 ml of ultrapure water was added to the reactor and stirred for 1 hour. After draining the ultrapure water, 300ml of ultrapure water was additionally added to the reactor and stirred for 1 hour.

Then, resistivity, total organic carbon (organic matter), resistivity, long-term stability evaluation, and boron adsorption evaluation were measured in the same manner as in Example 1, and are shown in Table 1.

Comparative Example 2

It proceeded in the same manner as in Example 1, except that the alcohol contact step (step (a)) for primary TOC removal was not performed.

Then, resistivity, total organic carbon (organic matter), resistivity, long-term stability evaluation, and boron adsorption evaluation were measured in the same manner as in Example 1, and are shown in Table 1.

Comparative Example 3

It proceeded in the same manner as in Example 1, except that the sodium hydroxide contact step (step (b)) for secondary TOC removal and resistivity improvement was not performed.

Then, resistivity, total organic carbon (organic matter), resistivity, long-term stability evaluation, and boron adsorption evaluation were measured in the same manner as in Example 1, and are shown in Table 1.

Comparative Example 4

The process was performed in the same manner as in Example 1, except that the ultrapure water contact step (step (c)) for tertiary TOC removal and resistivity improvement was not performed.

Then, resistivity, total organic carbon (organic matter), resistivity, long-term stability evaluation, and boron adsorption evaluation were measured in the same manner as in Example 1, and are shown in Table 1.

Comparative Example 5

Resistivity and total organic carbon (organic matter ), specific resistance, long-term stability evaluation, and boron adsorption evaluation were measured and shown in Table 1.

1) Flowing ultrapure water at room temperature in a downward flow at SV = 5 hr ^-1 for 30 minutes,

2) After passing 4% sodium hydroxide aqueous solution in a downward flow at SV = 3 hr ^-1 for 60 minutes,

3) The boron selective adsorption resin was adjusted by passing ultrapure water in a downward flow at SV = 10 hr ^-1 for 60 minutes.

Comparative Example 6

Resistivity and total organic carbon (organic matter) were measured in the same manner as in Example 1, except that the ultrapure water contact step (step (c)) for tertiary TOC removal and resistivity improvement was carried out by the column method instead of the batch method as follows. , resistivity, long-term stability evaluation, and boron adsorption evaluation were measured and shown in Table 1.

1) Flowing ultrapure water at room temperature in a downward flow at SV = 5 hr ^-1 for 30 minutes,

2) After the resin was heated and washed by passing ultrapure water at 80 ° C. in a downward flow at SV = 0.5 hr ^-1 for 600 minutes,

3) The boron selective adsorption resin was cooled by passing ultrapure water at room temperature in a downward flow at SV = 10 hr ^-1 for 60 minutes.

Comparative Example 7

In the sodium hydroxide contact step (step (b)) for secondary TOC removal and resistivity improvement, the same method as in Example 1 was performed, except that 1% sodium hydroxide concentration was used.

Then, resistivity, total organic carbon (organic matter), resistivity, long-term stability evaluation, and boron adsorption evaluation were measured in the same manner as in Example 1, and are shown in Table 1.

Comparative Example 8

In the sodium hydroxide contact step (step (b)) for secondary TOC removal and resistivity improvement, the same method as in Example 1 was performed, except that the sodium hydroxide treatment and the ultrapure water washing process were performed only once.

Then, resistivity, total organic carbon (organic matter), resistivity, long-term stability evaluation, and boron adsorption evaluation were measured in the same manner as in Example 1, and are shown in Table 1.

Comparative Example 9

In the ultrapure water contact step (step (c)) for tertiary TOC removal and resistivity improvement, the same method as in Example 1 was performed except that the heating temperature was set to 60 ° C.

Then, resistivity, total organic carbon (organic matter), resistivity, long-term stability evaluation, and boron adsorption evaluation were measured in the same manner as in Example 1, and are shown in Table 1.

[Table 1]

[Table 1]

As shown in Table 1, in the case of Examples 1 and 2 according to the present invention, Example 1 performed an alcohol contact step (step (a)) for primary TOC removal for processing of boron selective adsorption resin. After that, a sodium hydroxide contact step (step (b)) is carried out to remove the secondary TOC and improve the resistivity value, and through an ultrapure water contact step (step (c)) to remove the tertiary TOC and improve the resistivity value, the final hydroxide As a result of performing the sodium contact and ultrapure water cleaning steps (step (d)), the resistivity and TOC were 18.15 MΩ.cm or more and 1.0 ppb or less, respectively. As a result of evaluating the long-term stability of specific resistance after storing the processed boron-selective adsorption resin for 2 months, the reduction rate compared to the initial value was less than 10%. Boron adsorption evaluation was also less than 15 ppt within 1 hour.

In the case of Comparative Example 1, when heat treatment is performed with an aqueous solution of sodium hydroxide to remove TOC and improve the resistivity value, the TOC removal effect is excellent, but as a result of the long-term stability evaluation of the resistivity value, the specific resistance value is reduced by about 83%, indicating that the long-term stability is very poor. can

In contrast to Comparative Example 2 and Comparative Examples 3 and 4, the alcohol contact step for primary TOC removal (step (a)), the sodium hydroxide contact step for secondary TOC removal and resistivity improvement (step (b)), It can be seen that the TOC removal effect rapidly decreases when any one of the ultrapure water contact steps (step (c)) for tertiary TOC removal and resistivity improvement is excluded.

In the case of Comparative Example 5, the sodium hydroxide contact step (step (b)) for the secondary TOC removal and resistivity improvement was performed by the column method rather than the batch method, and as a result, TOC elution of 15 ppb was shown, resulting in a low TOC removal effect. As a result of the evaluation of specific resistance long-term stability, it can be seen that the specific resistance value is reduced by about 26%, and thus the long-term stability is deteriorated.

In the case of Comparative Example 6, the ultrapure water contact step (step (c)) for tertiary TOC removal and resistivity improvement was performed by a column method rather than a batch method. In step (c), since the column boils when 100 ° C. ultrapure water is used as in the example, the temperature of the ultrapure water was adjusted to 80 ° C., which can be performed in the column type, and as a result, TOC was 30 ppb It can be seen that the TOC removal effect is low by showing the elution.

Comparing Example 1 and Comparative Example 7, when the sodium hydroxide concentration is less than 2% in the sodium hydroxide contact step (step (b)) for secondary TOC removal and resistivity improvement, the TOC removal rate is low and the resistivity is long-term. It was found that the stability decreased slightly.

In the case of Comparative Example 8, in the sodium hydroxide contact step (step (b)) for secondary TOC removal and specific resistance improvement, when the sodium hydroxide treatment and ultrapure water washing process were performed only once, TOC showed dissolution of 20 ppb, and TOC It can be seen that the removal effect is low, and as a result of evaluating the specific resistance long-term stability, the specific resistance value decreases by about 44%, indicating that the long-term stability is poor.

In the case of Comparative Example 9, in the ultrapure water contact step (step (c)) for the tertiary TOC removal and specific resistance improvement, when the heating temperature is performed at 60 ° C, the TOC shows an elution of 30 ppb, indicating that the TOC removal effect is low. there is.

Therefore, the boron selective adsorption resins processed by the method according to the present invention as in Examples 1 and 2 have low total organic carbon (TOC) elution, high resistivity, low resistivity reduction even during long-term storage, and high boron removal efficiency. It can be seen that it has excellent properties.

Claims (13)

(a) heating a boron-selective adsorption resin having an aminopolyol group as a functional group in an aqueous alcohol solution;
(b) contacting the boron-selective adsorption resin heat-treated with the alcohol aqueous solution with an alkali metal hydroxide aqueous solution in a batch manner, stirring for 0.5 to 1 hour, and repeating the process of washing with ultrapure water 2 to 3 times;
(c) heating the boron selective adsorption resin treated in step (b) in ultrapure water; and
(d) passing the boron selective adsorption resin with an alkali metal hydroxide aqueous solution in a column and washing with ultrapure water,
Processing method of boron selective adsorption resin. The aminopolyol group of claim 1, wherein the functional group is N-methyl-D-glucamine group, 2-amino-2-(hydroxymethyl)-1,3-propanediol group, 2-amino-2-methyl -1,3-propanediol group, 2-amino-1,3-propanediol group, 3-amino-1,2-propanediol group, 3-dimethylamino-1,2-propanediol group and 3-diethyl At least one member selected from the group consisting of an amino-1,2-propanediol group, a processing method. The processing method according to claim 1, wherein the boron-selective adsorption resin of step (a) is a styrene-divinylbenzene crosspolymer. The method according to claim 1, wherein the aqueous alcohol solution contains at least one alcohol selected from the group consisting of alcohols represented by the formula R ₁ -OH (R ₁ is an aliphatic alkyl group having 1 to 8 carbon atoms). The method of claim 1, wherein the alcohol concentration of the aqueous alcohol solution in step (a) is 50 to 100% by weight, and the heating temperature is 50 to 120 ° C. The method of claim 1, wherein step (a) is carried out batchwise. The processing method according to claim 1, wherein the aqueous alkali metal hydroxide solution is at least one selected from the group consisting of an aqueous solution of lithium hydroxide, an aqueous solution of sodium hydroxide, an aqueous solution of potassium hydroxide, an aqueous solution of rubidium hydroxide, and an aqueous solution of cesium hydroxide. The processing method according to claim 1, wherein the concentration of the aqueous alkali metal hydroxide solution is 2 to 10% by weight. delete The processing method according to claim 1, wherein the temperature at which the boron selective adsorption resin is heated in ultrapure water in step (c) is 70 °C to 120 °C. The method of claim 1, wherein in the step (d), the passing amount of the aqueous alkali metal hydroxide solution is 2 to 5 BV, the flow rate is SV 0.5 to 3, the washing amount of ultrapure water is 4 to 8 BV, and the flow rate SV is 10 to 30h ^-1 , processing method. A boron selective adsorption resin processed according to the method according to any one of claims 1 to 8, 10 and 11. The boron selective adsorption resin according to claim 12, wherein the resistivity is 18.15 MΩ.cm or more, and the resistivity reduction rate after 2 months is 10% or less.