KR20220003834A - 이미지 센싱 장치 - Google Patents

이미지 센싱 장치 Download PDF

Info

Publication number
KR20220003834A
KR20220003834A KR1020200081559A KR20200081559A KR20220003834A KR 20220003834 A KR20220003834 A KR 20220003834A KR 1020200081559 A KR1020200081559 A KR 1020200081559A KR 20200081559 A KR20200081559 A KR 20200081559A KR 20220003834 A KR20220003834 A KR 20220003834A
Authority
KR
South Korea
Prior art keywords
region
floating diffusion
separation
transfer gate
substrate
Prior art date
Application number
KR1020200081559A
Other languages
English (en)
Korean (ko)
Inventor
신종환
사승훈
Original Assignee
에스케이하이닉스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스케이하이닉스 주식회사 filed Critical 에스케이하이닉스 주식회사
Priority to KR1020200081559A priority Critical patent/KR20220003834A/ko
Priority to CN202110188654.1A priority patent/CN113889491A/zh
Priority to US17/183,120 priority patent/US12068343B2/en
Publication of KR20220003834A publication Critical patent/KR20220003834A/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020200081559A 2020-07-02 2020-07-02 이미지 센싱 장치 KR20220003834A (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020200081559A KR20220003834A (ko) 2020-07-02 2020-07-02 이미지 센싱 장치
CN202110188654.1A CN113889491A (zh) 2020-07-02 2021-02-19 图像感测装置
US17/183,120 US12068343B2 (en) 2020-07-02 2021-02-23 Image sensing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020200081559A KR20220003834A (ko) 2020-07-02 2020-07-02 이미지 센싱 장치

Publications (1)

Publication Number Publication Date
KR20220003834A true KR20220003834A (ko) 2022-01-11

Family

ID=79013108

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200081559A KR20220003834A (ko) 2020-07-02 2020-07-02 이미지 센싱 장치

Country Status (3)

Country Link
US (1) US12068343B2 (zh)
KR (1) KR20220003834A (zh)
CN (1) CN113889491A (zh)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4578792B2 (ja) * 2003-09-26 2010-11-10 富士通セミコンダクター株式会社 固体撮像装置
KR101989567B1 (ko) 2012-05-31 2019-06-14 삼성전자주식회사 이미지 센서
KR102009192B1 (ko) * 2013-02-05 2019-08-09 삼성전자주식회사 이미지 센서의 단위 픽셀 및 이를 포함하는 이미지 센서
KR102114344B1 (ko) * 2013-06-05 2020-05-22 삼성전자주식회사 이미지 센서의 픽셀 어레이 레이아웃 생성 방법 및 이를 이용한 레이아웃 생성 시스템
KR102617389B1 (ko) * 2016-10-06 2023-12-26 에스케이하이닉스 주식회사 이미지 센서
KR102576338B1 (ko) * 2017-01-04 2023-09-07 삼성전자주식회사 이미지 센서
KR20210004595A (ko) 2019-07-05 2021-01-13 에스케이하이닉스 주식회사 이미지 센싱 장치
US11355537B2 (en) * 2019-10-16 2022-06-07 Omnivision Technologies, Inc. Vertical gate structure and layout in a CMOS image sensor

Also Published As

Publication number Publication date
US20220005856A1 (en) 2022-01-06
CN113889491A (zh) 2022-01-04
US12068343B2 (en) 2024-08-20

Similar Documents

Publication Publication Date Title
CN101292355B (zh) 成像器像素的植入式隔离区
US9997556B2 (en) Image sensor
US9935142B2 (en) Image sensor including transfer gates in deep trenches
KR20170043140A (ko) 이미지 센서
CN110911429B (zh) 具有p型隔离结构的图像传感器
KR102575458B1 (ko) 이미지 센서 및 그 제조방법
US20210020676A1 (en) Image sensor and method of fabricating the same
KR102632460B1 (ko) 반도체 장치 및 그 제조 방법
KR102653348B1 (ko) 이미지 센서
CN111048537A (zh) 包括有源区的图像传感器
KR20170131928A (ko) 이미지 센서
KR102637626B1 (ko) 이미지 센서
KR20210004595A (ko) 이미지 센싱 장치
KR20180096836A (ko) 이미지 센서 및 그 동작방법
KR20220100581A (ko) 반도체 장치 및 반도체 장치의 제조 방법, 촬상 장치
KR20210139089A (ko) 이미지 센싱 장치
KR20210013890A (ko) 이미지 센싱 장치
KR20220003834A (ko) 이미지 센싱 장치
KR20200071575A (ko) 이미지 센싱 장치
KR20210121851A (ko) 이미지 센싱 장치
US20210242257A1 (en) Image sensing device
US20230411418A1 (en) Imaging sensing device and method of manufacturing the same
US20230022805A1 (en) Dual vertical gate and image sensor including the same
US20230268366A1 (en) Image sensor
US20220285414A1 (en) Image sensing device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal