KR20210115022A - 광학 센서 및 광학적 검출용 검출기 - Google Patents

광학 센서 및 광학적 검출용 검출기 Download PDF

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Publication number
KR20210115022A
KR20210115022A KR1020217026217A KR20217026217A KR20210115022A KR 20210115022 A KR20210115022 A KR 20210115022A KR 1020217026217 A KR1020217026217 A KR 1020217026217A KR 20217026217 A KR20217026217 A KR 20217026217A KR 20210115022 A KR20210115022 A KR 20210115022A
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South Korea
Prior art keywords
layer
cover
substrate
optical sensor
photoconductive material
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KR1020217026217A
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English (en)
Korean (ko)
Inventor
빌프리드 헤르메스
제바스티안 팔루흐
제바스티안 뮐러
레기나 회
하이디 베흐텔
티모 알텐벡크
파비안 디트만
베르트람 포이어스타인
토마스 후파우어
안케 한드렉크
로베르트 구스트
로베르트 젠트
잉그마르 브루더
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트리나미엑스 게엠베하
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Application filed by 트리나미엑스 게엠베하 filed Critical 트리나미엑스 게엠베하
Priority to KR1020257005147A priority Critical patent/KR20250026412A/ko
Publication of KR20210115022A publication Critical patent/KR20210115022A/ko
Ceased legal-status Critical Current

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    • H01L31/0203—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING SYSTEMS, e.g. PERSONAL CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B17/00—Fire alarms; Alarms responsive to explosion
    • G08B17/10—Actuation by presence of smoke or gases, e.g. automatic alarm devices for analysing flowing fluid materials by the use of optical means
    • G08B17/11—Actuation by presence of smoke or gases, e.g. automatic alarm devices for analysing flowing fluid materials by the use of optical means using an ionisation chamber for detecting smoke or gas
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING SYSTEMS, e.g. PERSONAL CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B17/00—Fire alarms; Alarms responsive to explosion
    • G08B17/12—Actuation by presence of radiation or particles, e.g. of infrared radiation or of ions
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING SYSTEMS, e.g. PERSONAL CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B21/00—Alarms responsive to a single specified undesired or abnormal condition and not otherwise provided for
    • G08B21/02—Alarms for ensuring the safety of persons
    • G08B21/12—Alarms for ensuring the safety of persons responsive to undesired emission of substances, e.g. pollution alarms
    • H01L31/0324—
    • H01L31/095—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe

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  • Business, Economics & Management (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Emergency Management (AREA)
  • Engineering & Computer Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Microelectronics & Electronic Packaging (AREA)
KR1020217026217A 2019-01-18 2020-01-16 광학 센서 및 광학적 검출용 검출기 Ceased KR20210115022A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257005147A KR20250026412A (ko) 2019-01-18 2020-01-16 광학 센서 및 광학적 검출용 검출기

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19152511 2019-01-18
EP19152511.2 2019-01-18
PCT/EP2020/051017 WO2020148381A1 (en) 2019-01-18 2020-01-16 Optical sensor and detector for an optical detection

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257005147A Division KR20250026412A (ko) 2019-01-18 2020-01-16 광학 센서 및 광학적 검출용 검출기

Publications (1)

Publication Number Publication Date
KR20210115022A true KR20210115022A (ko) 2021-09-24

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Family Applications (2)

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KR1020217026217A Ceased KR20210115022A (ko) 2019-01-18 2020-01-16 광학 센서 및 광학적 검출용 검출기
KR1020257005147A Ceased KR20250026412A (ko) 2019-01-18 2020-01-16 광학 센서 및 광학적 검출용 검출기

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Country Status (6)

Country Link
US (2) US12199209B2 (https=)
EP (1) EP3912197A1 (https=)
JP (2) JP2022523476A (https=)
KR (2) KR20210115022A (https=)
CN (1) CN113302750A (https=)
WO (1) WO2020148381A1 (https=)

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JP7528109B2 (ja) 2019-02-27 2024-08-05 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 光検出のための光センサ及び検出器
US12382747B2 (en) 2019-03-15 2025-08-05 Trinamix Gmbh Method for selecting an optical sensor
KR20230097023A (ko) 2020-10-26 2023-06-30 트리나미엑스 게엠베하 적어도 하나의 물질의 적어도 하나의 특성을 결정하는 광학 검출기 및 방법
CN113990960B (zh) * 2021-10-22 2024-09-20 浙江大学 一种具有缓冲层的氧化镓基异质结紫外探测器及其制备方法
CN114582993B (zh) * 2022-02-28 2023-03-10 中国科学院半导体研究所 光电传感器及其制备方法、图像传感器中的应用
CN116190486A (zh) * 2022-12-29 2023-05-30 昆明物理研究所 宽波段PbS量子点基光电探测器及其制备方法
CN116190485B (zh) * 2022-12-29 2026-04-17 昆明物理研究所 能级调控PbS量子点光电探测器及其制备方法
CN116903049B (zh) * 2023-07-21 2026-03-03 中国科学技术大学 一种胶体Co9S8纳米线的制备方法
US12540855B2 (en) * 2023-08-07 2026-02-03 City University Of Hong Kong Wide-band photodetectors using thermoelectric materials

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JP2554159B2 (ja) 1989-02-21 1996-11-13 キヤノン株式会社 光電変換装置
US5291066A (en) 1991-11-14 1994-03-01 General Electric Company Moisture-proof electrical circuit high density interconnect module and method for making same
DE19818824B4 (de) * 1998-04-27 2008-07-31 Epcos Ag Elektronisches Bauelement und Verfahren zu dessen Herstellung
EP1523043B1 (en) * 2003-10-06 2011-12-28 Semiconductor Energy Laboratory Co., Ltd. Optical sensor and method for manufacturing the same
US7939932B2 (en) 2007-06-20 2011-05-10 Analog Devices, Inc. Packaged chip devices with atomic layer deposition protective films
US8378287B2 (en) * 2007-06-27 2013-02-19 Koninklijke Philips Electronics N.V. Optical sensor module including a diode laser and a substrate transparent to radiation emitted by the diode laser and a method for manufacturing an optical sensor module
JP2009010075A (ja) * 2007-06-27 2009-01-15 Fujifilm Corp 放射線画像検出器
CN102308406B (zh) * 2009-02-05 2015-08-26 皇家飞利浦电子股份有限公司 电致发光器件
EP2601694A1 (en) * 2010-08-05 2013-06-12 Koninklijke Philips Electronics N.V. Organic electroluminescent device
EP3029485B1 (en) 2011-02-15 2019-12-11 Basf Se Detector for optically detecting at least one object
DE102011016935A1 (de) 2011-04-13 2012-10-18 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements und Licht emittierendes Halbleiterbauelement
US9389315B2 (en) 2012-12-19 2016-07-12 Basf Se Detector comprising a transversal optical sensor for detecting a transversal position of a light beam from an object and a longitudinal optical sensor sensing a beam cross-section of the light beam in a sensor region
DE102013104964A1 (de) * 2013-05-14 2014-11-20 Micro-Hybrid Electronic Gmbh Hermetisch gasdichtes optoelektronisches oder elektrooptisches Bauteil sowie Verfahren zu seiner Herstellung
FI20135967L (fi) 2013-09-27 2015-03-28 Lumichip Oy Asennustason monitoiminen kapselointikerros ja menetelmä sen valmistamiseksi
EP3251152B1 (en) 2015-01-30 2023-08-16 Trinamix GmbH Detector for an optical detection of at least one object
JP2017224704A (ja) * 2016-06-15 2017-12-21 セイコーエプソン株式会社 真空パッケージ、電子デバイス、電子機器及び移動体
KR102492134B1 (ko) * 2016-07-29 2023-01-27 트리나미엑스 게엠베하 광학 센서 및 광학적 검출용 검출기
WO2018187963A1 (zh) * 2017-04-12 2018-10-18 深圳市汇顶科技股份有限公司 光学指纹传感器和光学指纹传感器的封装方法
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Also Published As

Publication number Publication date
JP2022523476A (ja) 2022-04-25
US20220093811A1 (en) 2022-03-24
JP2025186268A (ja) 2025-12-23
WO2020148381A1 (en) 2020-07-23
US12199209B2 (en) 2025-01-14
CN113302750A (zh) 2021-08-24
KR20250026412A (ko) 2025-02-25
US20250098337A1 (en) 2025-03-20
EP3912197A1 (en) 2021-11-24

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