JP2022523476A - 光学検出のための光センサ及び検出器 - Google Patents

光学検出のための光センサ及び検出器 Download PDF

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JP2022523476A
JP2022523476A JP2021541671A JP2021541671A JP2022523476A JP 2022523476 A JP2022523476 A JP 2022523476A JP 2021541671 A JP2021541671 A JP 2021541671A JP 2021541671 A JP2021541671 A JP 2021541671A JP 2022523476 A JP2022523476 A JP 2022523476A
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layer
cover
substrate
optical sensor
photoconducting
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JP2021541671A
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Japanese (ja)
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JP2022523476A5 (https=
Inventor
ヘルメス，ヴィルフリート
ファローフ，ゼバスティアン
ミュラー，ゼバスティアン
ヘー，レジーナ
ベヒテル，ハイジ
アルテンベック，ティモ
ディットマン，ファビアン
フォイアーシュタイン，ベルトラム
フプファウアー，トマス
ハンドレック，アンケ
グスト，ロベルト
ゼント，ロベルト
ブルーダー，イングマル
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トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング
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Publication of JP2022523476A publication Critical patent/JP2022523476A/ja
Publication of JP2022523476A5 publication Critical patent/JP2022523476A5/ja
Priority to JP2025139438A priority Critical patent/JP2025186268A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING SYSTEMS, e.g. PERSONAL CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B17/00—Fire alarms; Alarms responsive to explosion
    • G08B17/10—Actuation by presence of smoke or gases, e.g. automatic alarm devices for analysing flowing fluid materials by the use of optical means
    • G08B17/11—Actuation by presence of smoke or gases, e.g. automatic alarm devices for analysing flowing fluid materials by the use of optical means using an ionisation chamber for detecting smoke or gas
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING SYSTEMS, e.g. PERSONAL CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B17/00—Fire alarms; Alarms responsive to explosion
    • G08B17/12—Actuation by presence of radiation or particles, e.g. of infrared radiation or of ions
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING SYSTEMS, e.g. PERSONAL CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B21/00—Alarms responsive to a single specified undesired or abnormal condition and not otherwise provided for
    • G08B21/02—Alarms for ensuring the safety of persons
    • G08B21/12—Alarms for ensuring the safety of persons responsive to undesired emission of substances, e.g. pollution alarms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe

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  • Business, Economics & Management (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Emergency Management (AREA)
  • Engineering & Computer Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2021541671A 2019-01-18 2020-01-16 光学検出のための光センサ及び検出器 Pending JP2022523476A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025139438A JP2025186268A (ja) 2019-01-18 2025-08-25 光学検出のための光センサ及び検出器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19152511 2019-01-18
EP19152511.2 2019-01-18
PCT/EP2020/051017 WO2020148381A1 (en) 2019-01-18 2020-01-16 Optical sensor and detector for an optical detection

Related Child Applications (1)

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JP2025139438A Division JP2025186268A (ja) 2019-01-18 2025-08-25 光学検出のための光センサ及び検出器

Publications (2)

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JP2022523476A true JP2022523476A (ja) 2022-04-25
JP2022523476A5 JP2022523476A5 (https=) 2022-12-22

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JP2021541671A Pending JP2022523476A (ja) 2019-01-18 2020-01-16 光学検出のための光センサ及び検出器
JP2025139438A Pending JP2025186268A (ja) 2019-01-18 2025-08-25 光学検出のための光センサ及び検出器

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US (2) US12199209B2 (https=)
EP (1) EP3912197A1 (https=)
JP (2) JP2022523476A (https=)
KR (2) KR20210115022A (https=)
CN (1) CN113302750A (https=)
WO (1) WO2020148381A1 (https=)

Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
JP7528109B2 (ja) 2019-02-27 2024-08-05 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 光検出のための光センサ及び検出器
US12382747B2 (en) 2019-03-15 2025-08-05 Trinamix Gmbh Method for selecting an optical sensor
KR20230097023A (ko) 2020-10-26 2023-06-30 트리나미엑스 게엠베하 적어도 하나의 물질의 적어도 하나의 특성을 결정하는 광학 검출기 및 방법
CN113990960B (zh) * 2021-10-22 2024-09-20 浙江大学 一种具有缓冲层的氧化镓基异质结紫外探测器及其制备方法
CN114582993B (zh) * 2022-02-28 2023-03-10 中国科学院半导体研究所 光电传感器及其制备方法、图像传感器中的应用
CN116190486A (zh) * 2022-12-29 2023-05-30 昆明物理研究所 宽波段PbS量子点基光电探测器及其制备方法
CN116190485B (zh) * 2022-12-29 2026-04-17 昆明物理研究所 能级调控PbS量子点光电探测器及其制备方法
CN116903049B (zh) * 2023-07-21 2026-03-03 中国科学技术大学 一种胶体Co9S8纳米线的制备方法
US12540855B2 (en) * 2023-08-07 2026-02-03 City University Of Hong Kong Wide-band photodetectors using thermoelectric materials

Citations (5)

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JPH02219267A (ja) * 1989-02-21 1990-08-31 Canon Inc 光電変換装置
US20130313604A1 (en) * 2011-04-13 2013-11-28 Osram Opto Semiconductors Gmbh Method for Producing a Light-Emitting Semiconductor Component and Light-Emitting Semiconductor Component
WO2015044529A1 (en) * 2013-09-27 2015-04-02 Lumichip Oy Assembly level encapsulation layer with multifunctional purpose, and method of producing the same
WO2018019921A1 (en) * 2016-07-29 2018-02-01 Trinamix Gmbh Optical sensor and detector for optical detection
WO2018193045A1 (en) * 2017-04-20 2018-10-25 Trinamix Gmbh Optical detector

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DE19818824B4 (de) * 1998-04-27 2008-07-31 Epcos Ag Elektronisches Bauelement und Verfahren zu dessen Herstellung
EP1523043B1 (en) * 2003-10-06 2011-12-28 Semiconductor Energy Laboratory Co., Ltd. Optical sensor and method for manufacturing the same
US7939932B2 (en) 2007-06-20 2011-05-10 Analog Devices, Inc. Packaged chip devices with atomic layer deposition protective films
US8378287B2 (en) * 2007-06-27 2013-02-19 Koninklijke Philips Electronics N.V. Optical sensor module including a diode laser and a substrate transparent to radiation emitted by the diode laser and a method for manufacturing an optical sensor module
JP2009010075A (ja) * 2007-06-27 2009-01-15 Fujifilm Corp 放射線画像検出器
CN102308406B (zh) * 2009-02-05 2015-08-26 皇家飞利浦电子股份有限公司 电致发光器件
EP2601694A1 (en) * 2010-08-05 2013-06-12 Koninklijke Philips Electronics N.V. Organic electroluminescent device
EP3029485B1 (en) 2011-02-15 2019-12-11 Basf Se Detector for optically detecting at least one object
US9389315B2 (en) 2012-12-19 2016-07-12 Basf Se Detector comprising a transversal optical sensor for detecting a transversal position of a light beam from an object and a longitudinal optical sensor sensing a beam cross-section of the light beam in a sensor region
DE102013104964A1 (de) * 2013-05-14 2014-11-20 Micro-Hybrid Electronic Gmbh Hermetisch gasdichtes optoelektronisches oder elektrooptisches Bauteil sowie Verfahren zu seiner Herstellung
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JPH02219267A (ja) * 1989-02-21 1990-08-31 Canon Inc 光電変換装置
US20130313604A1 (en) * 2011-04-13 2013-11-28 Osram Opto Semiconductors Gmbh Method for Producing a Light-Emitting Semiconductor Component and Light-Emitting Semiconductor Component
WO2015044529A1 (en) * 2013-09-27 2015-04-02 Lumichip Oy Assembly level encapsulation layer with multifunctional purpose, and method of producing the same
WO2018019921A1 (en) * 2016-07-29 2018-02-01 Trinamix Gmbh Optical sensor and detector for optical detection
WO2018193045A1 (en) * 2017-04-20 2018-10-25 Trinamix Gmbh Optical detector

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Publication number Publication date
US20220093811A1 (en) 2022-03-24
JP2025186268A (ja) 2025-12-23
KR20210115022A (ko) 2021-09-24
WO2020148381A1 (en) 2020-07-23
US12199209B2 (en) 2025-01-14
CN113302750A (zh) 2021-08-24
KR20250026412A (ko) 2025-02-25
US20250098337A1 (en) 2025-03-20
EP3912197A1 (en) 2021-11-24

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