CN113302750A - 光学传感器和用于光学检测的检测器 - Google Patents

光学传感器和用于光学检测的检测器 Download PDF

Info

Publication number
CN113302750A
CN113302750A CN202080009601.2A CN202080009601A CN113302750A CN 113302750 A CN113302750 A CN 113302750A CN 202080009601 A CN202080009601 A CN 202080009601A CN 113302750 A CN113302750 A CN 113302750A
Authority
CN
China
Prior art keywords
layer
optical sensor
substrate
cover
photoconductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080009601.2A
Other languages
English (en)
Chinese (zh)
Inventor
W·赫尔梅斯
S·瓦鲁施
S·穆勒
R·赫
H·贝克特尔
T·阿尔腾贝克
F·迪特曼
B·福伊尔施泰因
T·胡普福尔
A·汉德瑞克
R·古斯特
R·森德
I·布鲁德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TrinamiX GmbH
Original Assignee
TrinamiX GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TrinamiX GmbH filed Critical TrinamiX GmbH
Publication of CN113302750A publication Critical patent/CN113302750A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING SYSTEMS, e.g. PERSONAL CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B17/00—Fire alarms; Alarms responsive to explosion
    • G08B17/10—Actuation by presence of smoke or gases, e.g. automatic alarm devices for analysing flowing fluid materials by the use of optical means
    • G08B17/11—Actuation by presence of smoke or gases, e.g. automatic alarm devices for analysing flowing fluid materials by the use of optical means using an ionisation chamber for detecting smoke or gas
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING SYSTEMS, e.g. PERSONAL CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B17/00—Fire alarms; Alarms responsive to explosion
    • G08B17/12—Actuation by presence of radiation or particles, e.g. of infrared radiation or of ions
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING SYSTEMS, e.g. PERSONAL CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B21/00—Alarms responsive to a single specified undesired or abnormal condition and not otherwise provided for
    • G08B21/02—Alarms for ensuring the safety of persons
    • G08B21/12—Alarms for ensuring the safety of persons responsive to undesired emission of substances, e.g. pollution alarms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe

Landscapes

  • Business, Economics & Management (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Emergency Management (AREA)
  • Engineering & Computer Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Microelectronics & Electronic Packaging (AREA)
CN202080009601.2A 2019-01-18 2020-01-16 光学传感器和用于光学检测的检测器 Pending CN113302750A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19152511 2019-01-18
EP19152511.2 2019-01-18
PCT/EP2020/051017 WO2020148381A1 (en) 2019-01-18 2020-01-16 Optical sensor and detector for an optical detection

Publications (1)

Publication Number Publication Date
CN113302750A true CN113302750A (zh) 2021-08-24

Family

ID=65138820

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080009601.2A Pending CN113302750A (zh) 2019-01-18 2020-01-16 光学传感器和用于光学检测的检测器

Country Status (6)

Country Link
US (2) US12199209B2 (https=)
EP (1) EP3912197A1 (https=)
JP (2) JP2022523476A (https=)
KR (2) KR20210115022A (https=)
CN (1) CN113302750A (https=)
WO (1) WO2020148381A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113990960A (zh) * 2021-10-22 2022-01-28 浙江大学 一种具有缓冲层的氧化镓基异质结紫外探测器及其制备方法
CN114582993A (zh) * 2022-02-28 2022-06-03 中国科学院半导体研究所 光电传感器及其制备方法、图像传感器中的应用
CN116190486A (zh) * 2022-12-29 2023-05-30 昆明物理研究所 宽波段PbS量子点基光电探测器及其制备方法
CN116190485A (zh) * 2022-12-29 2023-05-30 昆明物理研究所 能级调控PbS量子点光电探测器及其制备方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7528109B2 (ja) 2019-02-27 2024-08-05 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 光検出のための光センサ及び検出器
US12382747B2 (en) 2019-03-15 2025-08-05 Trinamix Gmbh Method for selecting an optical sensor
KR20230097023A (ko) 2020-10-26 2023-06-30 트리나미엑스 게엠베하 적어도 하나의 물질의 적어도 하나의 특성을 결정하는 광학 검출기 및 방법
CN116903049B (zh) * 2023-07-21 2026-03-03 中国科学技术大学 一种胶体Co9S8纳米线的制备方法
US12540855B2 (en) * 2023-08-07 2026-02-03 City University Of Hong Kong Wide-band photodetectors using thermoelectric materials

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02219267A (ja) * 1989-02-21 1990-08-31 Canon Inc 光電変換装置
CN1298571A (zh) * 1998-04-27 2001-06-06 埃普科斯股份有限公司 电子器件
CN1606174A (zh) * 2003-10-06 2005-04-13 株式会社半导体能源研究所 半导体器件及其制造方法
CN101689748A (zh) * 2007-06-27 2010-03-31 皇家飞利浦电子股份有限公司 光学传感器模块及其制造
CN102308406A (zh) * 2009-02-05 2012-01-04 皇家飞利浦电子股份有限公司 电致发光器件
CN103081156A (zh) * 2010-08-05 2013-05-01 皇家飞利浦电子股份有限公司 有机电致发光器件
CN104159423A (zh) * 2013-05-14 2014-11-19 微混合电子有限公司 气密性密封的光电或电光部件及其生产方法
WO2015044529A1 (en) * 2013-09-27 2015-04-02 Lumichip Oy Assembly level encapsulation layer with multifunctional purpose, and method of producing the same
CN107527871A (zh) * 2016-06-15 2017-12-29 精工爱普生株式会社 真空封装、电子器件、电子设备以及移动体
WO2018019921A1 (en) * 2016-07-29 2018-02-01 Trinamix Gmbh Optical sensor and detector for optical detection
CN108496179A (zh) * 2017-04-12 2018-09-04 深圳市汇顶科技股份有限公司 光学指纹传感器和光学指纹传感器的封装方法
WO2018193045A1 (en) * 2017-04-20 2018-10-25 Trinamix Gmbh Optical detector

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5291066A (en) 1991-11-14 1994-03-01 General Electric Company Moisture-proof electrical circuit high density interconnect module and method for making same
US7939932B2 (en) 2007-06-20 2011-05-10 Analog Devices, Inc. Packaged chip devices with atomic layer deposition protective films
JP2009010075A (ja) * 2007-06-27 2009-01-15 Fujifilm Corp 放射線画像検出器
EP3029485B1 (en) 2011-02-15 2019-12-11 Basf Se Detector for optically detecting at least one object
DE102011016935A1 (de) 2011-04-13 2012-10-18 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements und Licht emittierendes Halbleiterbauelement
US9389315B2 (en) 2012-12-19 2016-07-12 Basf Se Detector comprising a transversal optical sensor for detecting a transversal position of a light beam from an object and a longitudinal optical sensor sensing a beam cross-section of the light beam in a sensor region
EP3251152B1 (en) 2015-01-30 2023-08-16 Trinamix GmbH Detector for an optical detection of at least one object

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02219267A (ja) * 1989-02-21 1990-08-31 Canon Inc 光電変換装置
CN1298571A (zh) * 1998-04-27 2001-06-06 埃普科斯股份有限公司 电子器件
CN1606174A (zh) * 2003-10-06 2005-04-13 株式会社半导体能源研究所 半导体器件及其制造方法
CN101689748A (zh) * 2007-06-27 2010-03-31 皇家飞利浦电子股份有限公司 光学传感器模块及其制造
CN102308406A (zh) * 2009-02-05 2012-01-04 皇家飞利浦电子股份有限公司 电致发光器件
CN103081156A (zh) * 2010-08-05 2013-05-01 皇家飞利浦电子股份有限公司 有机电致发光器件
CN104159423A (zh) * 2013-05-14 2014-11-19 微混合电子有限公司 气密性密封的光电或电光部件及其生产方法
WO2015044529A1 (en) * 2013-09-27 2015-04-02 Lumichip Oy Assembly level encapsulation layer with multifunctional purpose, and method of producing the same
CN107527871A (zh) * 2016-06-15 2017-12-29 精工爱普生株式会社 真空封装、电子器件、电子设备以及移动体
WO2018019921A1 (en) * 2016-07-29 2018-02-01 Trinamix Gmbh Optical sensor and detector for optical detection
CN108496179A (zh) * 2017-04-12 2018-09-04 深圳市汇顶科技股份有限公司 光学指纹传感器和光学指纹传感器的封装方法
WO2018193045A1 (en) * 2017-04-20 2018-10-25 Trinamix Gmbh Optical detector

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113990960A (zh) * 2021-10-22 2022-01-28 浙江大学 一种具有缓冲层的氧化镓基异质结紫外探测器及其制备方法
CN114582993A (zh) * 2022-02-28 2022-06-03 中国科学院半导体研究所 光电传感器及其制备方法、图像传感器中的应用
CN114582993B (zh) * 2022-02-28 2023-03-10 中国科学院半导体研究所 光电传感器及其制备方法、图像传感器中的应用
CN116190486A (zh) * 2022-12-29 2023-05-30 昆明物理研究所 宽波段PbS量子点基光电探测器及其制备方法
CN116190485A (zh) * 2022-12-29 2023-05-30 昆明物理研究所 能级调控PbS量子点光电探测器及其制备方法

Also Published As

Publication number Publication date
JP2022523476A (ja) 2022-04-25
US20220093811A1 (en) 2022-03-24
JP2025186268A (ja) 2025-12-23
KR20210115022A (ko) 2021-09-24
WO2020148381A1 (en) 2020-07-23
US12199209B2 (en) 2025-01-14
KR20250026412A (ko) 2025-02-25
US20250098337A1 (en) 2025-03-20
EP3912197A1 (en) 2021-11-24

Similar Documents

Publication Publication Date Title
US20250098337A1 (en) Optical sensor and detector for an optical detection
CN113632242B (zh) 光学传感器、用于选择光学传感器的方法和用于光学检测的检测器
EP3612805B1 (en) Optical detector
Kumar et al. Role of deposition parameters on the properties of the fabricated heterojunction ZnS/p-Si Schottky diode
JP2026004312A (ja) 光検出器
KR20220002454A (ko) 반도체 입자들을 포함하는 안정화된 잉크 및 그 용도
EA025947B1 (ru) Многослойное устройство для переноса электрической энергии и способ его изготовления
US11908956B2 (en) Optical sensor and detector for an optical detection
Hasan Metal oxide, Group V-VI chalcogenides and GaN/AlGaN photodetectors

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination