KR20210100065A - Variable low resistance area based electronic device and controlling thereof - Google Patents

Abstract

One embodiment of the present invention discloses a variable low resistance area-based electronic device, which includes an active layer including a spontaneously polarizable material and a layered structure; an application electrode disposed adjacent to the active layer; a polarization area applying an electric field to the active layer through the application electrode and formed in the active layer; at least one variable low resistance area including an area with the electrical resistance lower than the electrical resistance of the other area adjacent by being corresponded to the boundary of the polarization area; and a first electrode spaced apart from the application electrode and connected to the variable low resistance area and a second electrode spaced apart from the application electrode and connected to the variable low resistance area. An objective of the present invention is to provide the variable low resistance area-based electronic device that can be easily applied to various uses.

Description

Variable low resistance area based electronic device and controlling thereof

The present invention relates to an electronic device using a fluctuating low-resistance region and a method for controlling the same.

With the development of technology and increasing interest in people's convenience in life, attempts to develop various electronic products are becoming active.

In addition, these electronic products are becoming smaller and more integrated, and the places where they are used are increasing widely.

These electronic products include various electrical components, for example, CPUs, memories, and other various electrical components. These base elements may include various types of electrical circuits.

For example, electrical devices are used in products in various fields such as computers and smart phones as well as home sensor devices for IoT and bio-electronic devices for ergonomics.

On the other hand, the use and application fields of these electrical devices are rapidly increasing according to the recent speed of technological development and the rapid improvement of the living standards of users, and the demand thereof is also increasing accordingly.

According to this trend, there is a limit in implementing and controlling an electronic circuit that is easily and quickly applied to various electrical devices that are commonly used.

Meanwhile, memory devices, particularly nonvolatile memory devices, are widely used as information storage and/or processing devices of various electronic devices such as cameras and communication devices as well as computers.

These memory devices, particularly in terms of lifespan and speed, are being developed a lot. Most of the problems are in securing the memory lifespan and speed, but there is a limit to realizing the improved memory device.

The present invention can provide an electronic device based on a low fluctuation resistance region that can be easily applied to various uses and a method for controlling the same.

An embodiment of the present invention provides an active layer including a spontaneously polarizable material and having a layered structure, an applying electrode disposed adjacent to the active layer, and a polarization region formed in the active layer by applying an electric field to the active layer through the applying electrode, the At least one variable low-resistance region including a region having a lower electrical resistance than other adjacent regions corresponding to the boundary of the polarization region, a first electrode spaced apart from the applying electrode and connected to the variable low-resistance region, and spaced apart from the applying electrode, Disclosed is an electronic device based on a variable low resistance region including a second electrode connected to the variable low resistance region.

In this embodiment, the active layer has a composition different from the first component layer and the first component layer facing the first electrode and the second electrode, and is farther from the first electrode and the second electrode than the first component layer. and a second component layer adjacent the first component layer so as to be spaced apart.

In this embodiment, the value of the electrical resistance of the first component layer may be formed to be greater than the value of the electrical resistance of the second component layer.

In this embodiment, the active layer includes a plurality of unit layered structures stacked based on the thickness direction of the active layer, and one unit layered structure of the plurality of unit layered structures faces the first electrode and the second electrode a variable low resistance comprising a first component layer and a second component layer having a different composition than the first component layer and adjacent the first component layer and further away from the first and second electrodes than the first component layer Area-based electronics.

Another embodiment of the present invention provides an active layer comprising a spontaneously polarizable material and having a layered structure, an applying electrode disposed adjacent to the active layer, and a polarization region formed in the active layer by applying an electric field to the active layer through the applying electrode, the At least one variable low-resistance region including a region having a lower electrical resistance than other adjacent regions corresponding to the boundary of the polarization region, a first electrode spaced apart from the applying electrode and connected to the variable low-resistance region, and spaced apart from the applying electrode, Forming a polarization region of the active layer by applying an electric field to the active layer through the application electrode with respect to an electronic device based on a fluctuation low resistance region including a second electrode connected to the fluctuation low resistance region, the boundary of the polarization region forming a low-variable resistance region including a region having a lower electrical resistance than other adjacent regions in response to the flow of current between the first electrode and the second electrode through the low-variable resistance region Disclosed is a method for controlling an electronic device based on a fluctuation low resistance region comprising a.

In this embodiment, the active layer has a composition different from the first component layer and the first component layer facing the first electrode and the second electrode, and is farther from the first electrode and the second electrode than the first component layer. and a second component layer adjacent the first component layer so as to be spaced apart.

In this embodiment, the value of the electrical resistance of the first component layer may be formed to be greater than the value of the electrical resistance of the second component layer.

In this embodiment, the active layer includes a plurality of unit layered structures stacked based on the thickness direction of the active layer, and one unit layered structure of the plurality of unit layered structures faces the first electrode and the second electrode a first component layer and a second component layer having a different composition from the first component layer and adjacent to the first component layer so as to be further away from the first electrode and the second electrode than the first component layer.

In the present embodiment, the method may include controlling the polarization region by controlling the electric field through the application electrode, and generating or eliminating the variable low resistance region according to the control of the polarization region.

Other aspects, features and advantages other than those described above will become apparent from the following drawings, claims, and detailed description of the invention.

The electronic device using the fluctuating low-resistance region and the control method thereof according to the present invention can be easily applied to various uses.

1 is a schematic plan view showing an electronic circuit according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1 .
3 is an enlarged view of K of FIG. 2 .
4A to 4C are diagrams for explaining a control method related to the electronic circuit of FIG. 1 . 5 is a schematic plan view showing an electronic circuit according to another embodiment of the present invention.
6 is a cross-sectional view taken along the line VI-VI of FIG. 5 .
7A to 7D are diagrams for explaining a current path range control method related to the electronic circuit of FIG. 5 .
8 is a schematic plan view illustrating an electronic device according to an embodiment of the present invention.
9 is a cross-sectional view taken along line II-II of FIG. 8 .
10 to 14 are diagrams for explaining the operation of the electronic device of FIG. 8 .
15 is a schematic cross-sectional view showing an electronic device according to another embodiment of the present invention.
FIG. 16 is a schematic enlarged view enlarged to explain A of FIG. 15 .
FIG. 17 is a diagram illustrating an alternative embodiment of FIG. 16 .
18 is a diagram illustrating another alternative embodiment of FIG. 16 .
19 is a schematic cross-sectional view illustrating an electronic device according to another embodiment of the present invention.
20 is a schematic plan view illustrating an electronic device according to another embodiment of the present invention.
FIG. 21 is a cross-sectional view taken along line VI-VI of FIG. 20 .
22 is a graph illustrating a voltage and current relationship in a variable low resistance region.
23 is a cross-sectional view of a variable low resistance-based electronic device according to another embodiment of the present invention.
24 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.
25 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.
26 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.
27 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.
28 and 29 are cross-sectional views schematically illustrating an example of an electronic device according to another embodiment of the present invention.
30 is a schematic enlarged view enlarged to explain K of FIG. 29 . FIG. 31 is a cross-sectional view schematically illustrating another example of the electronic device of FIG. 28 .
32 is a cross-sectional view schematically illustrating another example of the electronic device of FIG. 28 .
33 is a cross-sectional view schematically illustrating another example of the electronic device of FIG. 28 .
34 is a cross-sectional view schematically illustrating an example of a section II′ of the electronic device of FIG. 28 .
35 is a cross-sectional view schematically illustrating another example of a section II′ of the electronic device of FIG. 28 .
FIG. 36 is a cross-sectional view schematically illustrating another example of a cross-section II′ of the electronic device of FIG. 28 .
FIG. 37 is a cross-sectional view schematically illustrating another example of a cross-section II′ of the electronic device of FIG. 28 .
38 is a cross-sectional view schematically illustrating another example of a cross section II′ of the electronic device of FIG. 28 .
FIG. 39 is a cross-sectional view schematically illustrating another example of a cross section II′ of the electronic device of FIG. 28 .

Hereinafter, the configuration and operation of the present invention will be described in detail with reference to the embodiments of the present invention shown in the accompanying drawings.

Since the present invention can apply various transformations and can have various embodiments, specific embodiments are illustrated in the drawings and described in detail in the detailed description. Effects and features of the present invention, and a method of achieving them, will become apparent with reference to the embodiments described below in detail in conjunction with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when described with reference to the drawings, the same or corresponding components are given the same reference numerals, and the overlapping description thereof will be omitted. .

In the following embodiments, terms such as first, second, etc. are used for the purpose of distinguishing one component from another, not in a limiting sense.

In the following examples, the singular expression includes the plural expression unless the context clearly dictates otherwise.

In the following embodiments, terms such as include or have means that the features or components described in the specification are present, and the possibility that one or more other features or components may be added is not excluded in advance.

In the drawings, the size of the components may be exaggerated or reduced for convenience of description. For example, since the size and thickness of each component shown in the drawings are arbitrarily indicated for convenience of description, the present invention is not necessarily limited to the illustrated bar.

In the following embodiments, the x-axis, the y-axis, and the z-axis are not limited to three axes on the Cartesian coordinate system, and may be interpreted in a broad sense including them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

Where certain embodiments are otherwise feasible, a specific process sequence may be performed different from the described sequence. For example, two processes described in succession may be performed substantially simultaneously, or may be performed in an order opposite to the order described.

1 is a schematic plan view showing an electronic circuit according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1, and FIG. 3 is an enlarged view K of FIG. 2 .

1 and 2 , the electronic circuit 10 of the present embodiment may include an active layer 11 , an application electrode 12 , and a variable low resistance region VL.

The active layer 11 may include a spontaneously polarizable material. For example, the active layer 11 may include an insulating material and a ferroelectric material. That is, the active layer 11 may comprise a material having a spontaneous electric polarization (electric dipole) that can be reversed in the presence of an electric field.

As an alternative embodiment the active layer 11 may comprise a perovskite-based material, for example, it may include _{BaTiO 3, SrTiO 3, BiFe3,} PbTiO3, PbZrO3, SrBi2Ta2O9.

In addition, as another example, the active layer 11 has an ABX3 structure, where A is an alkyl group of CnH2n+1, and at least one material selected from inorganic materials such as Cs and Ru capable of forming a perovskite solar cell structure, B may include at least one material selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 11 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _{3 ,} CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH _{3 )} NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1-y PbCl x} Br _3-x (0≤x, y≤1) can do.

The active layer 11 may be formed using various other ferroelectric materials, and descriptions of all examples thereof will be omitted. In addition, when the active layer 11 is formed, the ferroelectric material may be doped with various other materials to include additional functions or to improve electrical properties.

The active layer 11 has spontaneous polarization and can control the degree and direction of polarization according to the application of an electric field. In addition, the active layer 11 may maintain a polarized state even when the applied electric field is removed.

The application electrode 12 may be formed to apply an electric field to the active layer 11 , for example, to apply a voltage to the active layer 11 .

As an optional embodiment, the application electrode 12 may be formed to be in contact with the upper surface of the active layer 11 .

In addition, the application electrode 12 may be formed to apply voltages of various magnitudes to the active layer 11 and to control the voltage application time.

In an alternative embodiment, the application electrode 12 may be a gate electrode.

For example, the application electrode 12 may be electrically connected to a power source (not shown) or a power control unit.

The application electrode 12 may include various materials, and may include a material having high electrical conductivity. For example, the application electrode 12 may be formed using various metals.

For example, the application electrode 12 may be formed to contain aluminum, chromium, titanium, tantalum, molybdenum, tungsten, neodymium, scandium, or copper. Alternatively, it may be formed using an alloy of these materials or may be formed using a nitride of these materials.

Also, as an optional embodiment, the applying electrode 12 may include a laminate structure.

Although not shown, as an optional embodiment, one or more insulating layers may be further disposed between the application electrode 12 and the active layer 11 .

The fluctuating low resistance region VL is a region formed in the active layer 11 and is a region through which a current can flow, and can be formed as a path of a current having a linearity around the applying electrode 12 as shown in FIG. 1 . there is.

In more detail, the low-variation-resistance region VL is a region in which the electrical resistance of the active layer 11 is lower than that of other regions adjacent to the low-variation resistance region VL.

In addition, after forming the fluctuating low-resistance region VL through the application electrode 12 , even if the electric field through the application electrode 12 is removed, for example, even if the voltage is removed, the polarization state of the active layer 11 is Since it is maintained, the variable low resistance region VL is maintained, and a state in which a current path is formed can be maintained.

Through this, various electronic circuits can be configured.

The variable low resistance region VL has a height HVL, and this height HVL may correspond to the entire thickness of the active layer 11 .

The height HVL of the variable low resistance region VL may be proportional to the strength of the electric field, for example, the magnitude of the voltage when the electric field is applied through the application electrode 12 . At least the magnitude of this electric field may be greater than the intrinsic coercive field of the active layer 11 .

The fluctuating low resistance region VL is a region formed when a voltage is applied to the active layer 11 through the application electrode 12 , and can be changed, for example, generated, destroyed, or moved through the control of the application electrode 12 . .

The active layer 11 may include a first polarization region 11F having a first polarization direction, and the variable low resistance region VL may be formed at a boundary of the first polarization region 11F.

In addition, it may include a second polarization region 11R having a second polarization direction adjacent to the first polarization region 11F, and the variable low resistance region VL is at the boundary of the second polarization region 11R. can be formed. The second direction may be at least a direction different from the first direction, for example a direction opposite to the first direction.

For example, the variable low resistance region VL may be formed between the first polarization region 11F and the second polarization region 11R. Through this, the first polarization region 11F having a polarization direction in the first direction (for example, from the bottom to the top with respect to FIG. 2 ) centered on the variable low resistance region VL and the first direction opposite to the first direction The second polarization regions 11R having a polarization direction in a direction (eg, a direction from top to bottom with reference to FIG. 2 ) may be disposed to be distinguished.

The variable low resistance region VL may have a width WVL in one direction, which may be proportional to a movement distance of the variable low resistance region VL.

In addition, this width WVL may be the width of a region on a plane defined as the variable low resistance region VL, which may correspond to the width of the first polarization region 11F.

Also, the variable low resistance region VL may be formed to correspond to the entire side surface of the boundary line of the first polarization region 11F, and may have a thickness TVL1 in a direction away from the side surface of the first polarization region 11F. there is.

As an alternative embodiment, this thickness TVL1 may be 0.1 to 0.3 nanometers.

4A to 4C are diagrams for explaining a current path range control method with respect to the electronic circuit of FIG. 1 .

Referring to FIG. 4A , the active layer 11 may include a second polarization region 11R having a second polarization direction. As an alternative embodiment, the polarization state of the active layer 11 as shown in FIG. 4A may be formed by applying an initialization electric field through the application electrode 12 .

Then, referring to FIG. 4B , a first polarization region 11F is formed in the active layer 11 . As a specific example, the first polarization region 11F may be formed in a region overlapping the application electrode 12 to correspond to the width of the application electrode 12 .

It is larger than the coercive field of the active layer 11 through the application electrode 12 and has a size large enough that the height HVL of the first polarization region 11F can be formed to correspond to at least the entire thickness of the active layer 11 . An electric field may be applied to the active layer 11 .

Through the application of the electric field through the application electrode 12 , the polarization direction of one region of the second polarization region 11R of the active layer 11 may be changed to change to the first polarization region 11F.

As an optional embodiment, the growth rate in the height (HVL) direction of the first polarization region 11F may be very fast, for example, it may grow at a rate of 1 km/sec (second).

Then, if the electric field through the application electrode 12 is continuously maintained, that is, when time passes, the first polarization region 11F moves in the horizontal direction H, that is, in a direction orthogonal to the height HVL, and increases in size. can That is, the region of the second polarization region 11R may be gradually converted into the first polarization region 11F.

As an optional embodiment, the growth rate in the horizontal direction H of the first polarization region 11F may be very fast, for example, it may grow at a rate of 1 m/sec (second).

Through this, the size of the variable low resistance region VL can be controlled. This size is, for example, the width of the variable low resistance region VL and corresponds to the growth distance of the first polarization region 11F, so that the growth rate and the electric field It can be proportional to the holding time. For example, the growth distance may be proportional to the product of the growth rate and the duration of the electric field.

Also, the growth rate of the first polarization region 11F may be proportional to the sum of the growth rate in the height HVL direction and the growth rate in the horizontal direction H.

Therefore, the size of the variable low resistance region VL can be adjusted as desired by controlling the electric field holding time.

Specifically, as shown in FIG. 4C , the first polarization region 11F spreads widely and becomes larger, and accordingly, the variable low resistance region VL may also move away from the applying electrode 12 in a direction away from the first polarization region 11F.

In this embodiment, an electric field is applied to the active layer through the applying electrode to form a first polarization region having a first polarization direction different from the second polarization direction in the active layer, and at the boundary between the first polarization region and the second polarization region A corresponding variation low resistance region can be formed. This variation low-resistance region is a region with low resistance, and as a region with reduced resistance, can serve as a path for current, and thus an electronic circuit can be easily formed.

In addition, in this embodiment, by controlling the magnitude of the electric field through the applied electrode, for example, by controlling the magnitude of the voltage, the height of the variable low resistance region can be determined, and specifically, it is controlled to have a height corresponding to the entire thickness of the active layer. can do.

In addition, the size, for example, the width, of the fluctuating low-resistance region can be determined by controlling the duration of the electric field through the applied electrode. By controlling the size of the variable low resistance region, it is possible to easily control the size of the path of the current flow.

In addition, even if the electric field through the applied electrode is removed, the polarization state of the polarization region is maintained, so the path of the current can be easily maintained. The resistance region may have a low resistance so that no current flows.

Through this, it is possible to control the extinction of the path of the current, and as a result, it is possible to easily control the flow of the current.

By controlling the electronic circuit of the present embodiment, it can be used for various purposes, for example, one or more electrodes can be connected so as to be in contact with the variable low resistance region.

5 is a schematic plan view showing an electronic circuit according to another embodiment of the present invention.

6 is a cross-sectional view taken along the line VI-VI of FIG. 5 .

5 and 6 , the electronic circuit 20 of the present embodiment may include an active layer 21 , an application electrode 22 , and variable low resistance regions VL1 , VL2 , and VL3 .

The active layer 21 may include a spontaneously polarizable material. For example, the active layer 21 may include an insulating material and a ferroelectric material. That is, the active layer 21 may comprise a material having a spontaneous electrical polarization (electric dipole) that can be reversed in the presence of an electric field.

As an optional embodiment, the active layer 21 may include a perovskite-based material, and a detailed description thereof will be omitted since it is the same as the above-described embodiment.

The application electrode 22 may be formed to apply an electric field to the active layer 21 , for example, to apply a voltage to the active layer 21 . Specific details are the same as in the above-described embodiment, and thus will be omitted.

The variable low resistance regions VL1 , VL2 , and VL3 may include a first variable low resistance region VL1 , a second variable low resistance region VL2 , and a third variable low resistance region VL3 .

The first variation low resistance region VL1 may have a width greater than that of the second variation low resistance region VL2 , and the second variation low resistance region VL2 may have a width greater than that of the third variation low resistance region VL3 . there is. For example, the region surrounded by the first variation low resistance region VL1 has a larger width than the region surrounded by the second variation low resistance region VL2 , and the region surrounded by the second variation low resistance region VL2 has a third variation It may have a greater width than a region surrounded by the low resistance region VL3 .

As an optional embodiment, the first variation low resistance region VL1 is disposed outside the second variation low resistance region VL2 , and the second variation low resistance region VL2 is outside the third variation low resistance region VL3 . can be placed in

The first variation low-resistance region VL1 , the second variation low-resistance region VL2 , and the third low-variance resistance region VL3 are regions formed in the active layer 21 , and are regions through which current can flow, and have a linear current It can be formed by the path of

Specifically, the first variation low resistance region VL1 , the second variation low resistance region VL2 , and the third variation low resistance region VL3 are the first variation low resistance region VL1 and the second variation low resistance region VL3 of the active layer 21 . The second variation low resistance region VL2 and the third variation low resistance region VL3 are regions in which electrical resistance is lower than that of other regions adjacent to the region.

Further, after forming the first variation low resistance region VL1 , the second variation low resistance region VL2 , and the third variation low resistance region VL3 through the application electrode 22 , the Even if the electric field is removed, for example, even if the voltage is removed, the polarization state of the active layer 21 is maintained, so that the first variation low resistance region VL1, the second variation low resistance region VL2, and the third variation low resistance region (VL3) is maintained and can maintain a state forming a path of current.

Through this, various electronic circuits can be configured. For example, it may constitute at least a portion of a memory device capable of storing one or more data.

The variable low resistance regions VL1 , VL2 , and VL3 have a height HVL, and this height HVL may correspond to the entire thickness of the active layer 21 .

The active layer 21 may include first polarization regions 21F1 and 21F3 having a first polarization direction, and the variable low resistance regions VL1 , VL2 , and VL3 are boundaries of the first polarization regions 21F1 and 21F3 . can be formed in

In addition, second polarization regions 21R1 and 21R2 having a second polarization direction to be adjacent to the first polarization regions 21F1 and 21F3 may be included, and the variable low resistance region VL is such a second polarization region 21R1 , 21R2). The second direction may be at least a direction different from the first direction, for example a direction opposite to the first direction.

For example, the first variation low resistance region VL1 may be formed between the first polarization region 21F1 and the second polarization region 21R1 .

Also, the second variation low resistance region VL2 may be formed between the first polarization region 21F1 and the second polarization region 21R2 .

Also, the third variable low resistance region VL3 may be formed between the first polarization region 21F3 and the second polarization region 21R2 .

7A to 7D are diagrams for explaining a current path range control method related to the electronic circuit of FIG. 5 .

Referring to FIG. 7A , the active layer 21 may include a second polarization region 21R having a second polarization direction. As an alternative embodiment, the polarization state of the active layer 21 as shown in FIG. 7A may be formed by applying the initialization electric field through the application electrode 22 .

Then, referring to FIG. 7B , a first polarization region 21F is formed in the active layer 21 . As a specific example, the first polarization region 21F may be first formed in a region overlapping the application electrode 22 to correspond to the width of the application electrode 22 , and then grow in a horizontal direction to form a state as shown in FIG. 7B . Also, the first polarization region 21R of FIG. 7A may be reduced and changed to the first polarization region 21R1 having the same shape as that of FIG. 7B .

A first variation low resistance region VL1 may be formed between the first polarization region 21F and the second polarization region 21R1 .

Then, referring to FIG. 7C , the polarization direction of a portion of the first polarization region 21F is converted into a second polarization region 21R2 having a polarization direction in the second direction by applying an electric field in the opposite direction to that of FIG. 7B . can For example, the second polarization region 21R2 having a polarization direction in a second direction opposite to the first polarization direction of the first polarization region 21F may be formed.

In addition, through this, the size of the first polarization region 21F of FIG. 7B may be reduced to change into the first polarization region 21F1 having the shape shown in FIG. 7C .

A second variable low resistance region VL2 may be formed between the second polarization region 21R2 and the first polarization region 21F1 .

Since the polarization state is maintained, the first variation low resistance region VL1 may be maintained as it is.

Then, referring to FIG. 7D , the polarization direction of a portion of the second polarization region 21R2 is converted into the first polarization region 21F3 having the polarization direction in the first direction by applying an electric field opposite to that of FIG. 7C . can do. For example, the first polarization region 21F3 having a polarization direction in a first direction opposite to the second polarization direction of the second polarization region 21R2 may be formed.

Also, through this, the size of the second polarization region 21R2 of FIG. 7C may be reduced to change into the second polarization region 21R2 of the shape shown in FIG. 7D .

A third low-variation resistance region VL3 may be formed between the second polarization region 21R2 and the first polarization region 21F3 .

Since the polarization state is maintained, the first variation low resistance region VL1 and the second variation low resistance region VL2 are maintained as they are, and a third variation low resistance region VL3 may be added thereto.

In this embodiment, an electric field is applied to the active layer through the applying electrode to form a first polarization region having a first polarization direction different from the second polarization direction in the active layer, and at the boundary between the first polarization region and the second polarization region A corresponding variation low resistance region can be formed. The variable low-resistance region is a region with low resistance, and as a region with reduced resistance, it can serve as a path of current, and thus an electronic circuit can be easily formed.

In addition, the present embodiment can control the magnitude of the electric field through the applying electrode and control the direction of the electric field, thereby forming a plurality of first polarization regions or a plurality of second polarization regions with respect to the active layer.

A plurality of variable low resistance regions may be formed on a boundary line between the plurality of first polarization regions or the plurality of second polarization regions. Each of these plurality of fluctuating low-resistance regions can form a path of current, so that electronic circuits of various shapes and uses can be easily created and controlled.

For example, since the number of a plurality of variable low-resistance regions can be selectively applied around the applied electrode, various current paths can be formed, and a memory for storing various data according to the current paths can be implemented.

8 is a schematic plan view showing an electronic circuit according to an embodiment of the present invention, and FIG. 9 is a cross-sectional view taken along line II-II of FIG. 8 .

8 and 9 , the electronic device 100 of this embodiment may include an active layer 110 , an application electrode 120 , a variable low resistance region VL, and one or more connection electrode units 131 and 132 . there is.

The active layer 110 may include a spontaneously polarizable material. For example, the active layer 110 may include an insulating material and a ferroelectric material. That is, the active layer 110 may include a material having a spontaneous electrical polarization (electric dipole) that can be reversed in the presence of an electric field.

As an alternative embodiment the active layer 110 may comprise a perovskite-based material, for example, it may include _{BaTiO 3, SrTiO 3, BiFe3,} PbTiO3, PbZrO3, SrBi2Ta2O9.

Also, as another example, the active layer 110 has an ABX3 structure, where A is an alkyl group of CnH2n+1, and at least one material selected from inorganic materials such as Cs and Ru capable of forming a perovskite solar cell structure, B may include at least one material selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 110 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _{3 ,} CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH _{3 )} NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1-y PbCl x} Br _3-x (0≤x, y≤1) can do.

Since the active layer 110 may be formed using various other ferroelectric materials, descriptions of all examples thereof will be omitted. In addition, when the active layer 110 is formed, the ferroelectric material may be doped with various other materials to include additional functions or to improve electrical properties.

The active layer 110 has spontaneous polarization and can control the degree and direction of polarization according to the application of an electric field. In addition, the active layer 110 may maintain a polarized state even when the applied electric field is removed.

The application electrode 120 may be formed to apply an electric field to the active layer 110 , and for example, a voltage may be applied to the active layer 110 .

As an optional embodiment, the application electrode 120 may be formed to be in contact with the upper surface of the active layer 110 .

In addition, the application electrode 120 may be formed to apply voltages of various magnitudes to the active layer 110 and to control the voltage application time.

In an alternative embodiment, the application electrode 120 may be a gate electrode.

For example, the application electrode 120 may be electrically connected to a power source (not shown) or a power control unit.

The application electrode 120 may include various materials, and may include a material having high electrical conductivity. For example, the application electrode 120 may be formed using various metals.

For example, the application electrode 120 may be formed to contain aluminum, chromium, titanium, tantalum, molybdenum, tungsten, neodymium, scandium, or copper. Alternatively, it may be formed using an alloy of these materials or may be formed using a nitride of these materials.

Also, as an optional embodiment, the applying electrode 120 may include a laminate structure.

The connection electrode parts 131 and 132 may include one or more electrode members, for example, a first connection electrode member 131 and a second connection electrode member 132 .

The connection electrode parts 131 and 132 may be formed on the active layer 110 , for example, may be formed to be spaced apart from the applying electrode 120 on the upper surface of the active layer 110 , and as an optional embodiment, the active layer 110 . ) may be formed to be in contact with.

The first connection electrode member 131 and the second connection electrode member 132 may be formed using various conductive materials. For example, the first connection electrode member 131 and the second connection electrode member 132 may be formed to contain aluminum, chromium, copper, tantalum, titanium, molybdenum, or tungsten.

As an optional embodiment, the first connection electrode member 131 and the second connection electrode member 132 may include a structure in which a plurality of conductive layers are stacked.

As an optional embodiment, the first connection electrode member 131 and the second connection electrode member 132 may be formed using a conductive metal oxide, for example, indium oxide (eg, In ₂ O ₃ ), tin oxide. (eg SnO ₂ ), zinc oxide (eg ZnO), indium tin oxide alloy (eg In ₂ O ₃ —SnO ₂ ) or indium zinc oxide alloy (eg In ₂ O ₃ —ZnO) can be formed

As an optional embodiment, the connection electrode parts 131 and 132 may be terminal members including input/output of electrical signals.

Also, as a specific example, the first connection electrode member 131 and the second connection electrode member 132 of the connection electrode parts 131 and 132 may include a source electrode or a drain electrode.

10 to 14 are diagrams for explaining the operation of the electronic device of FIG. 8 .

10 is a view showing a state in which the first electric field is applied through the applying electrode 120, FIG. 11 is a cross-sectional view taken along line VIII-VIII of FIG. 10, and FIG. 12 is an enlarged view K of FIG. am.

10 to 14 , when a first electric field is applied to the active layer 110 through the application electrode 120 , at least one region of the active layer 110 may include a polarization region 110F.

The polarization region 110F may have a shape surrounding the application electrode 120 with the application electrode 120 as a center. The polarization region 110F may have a boundary line.

The first variation low resistance region VL1 may be formed in a region corresponding to the side of the boundary line. Referring to FIG. 10 , the application electrode 120 may be formed in a linear shape surrounding the application electrode 120 .

For example, the first variable low resistance region VL1 may have a first width WVL1 in one direction to surround the application electrode 120 .

Also, the first variation low resistance region VL1 may be formed to correspond to the entire side surface of the boundary line of the polarization region 110F, and may have a thickness TVL1 in a direction away from the side surface of the polarization region 110F.

As an alternative embodiment, this thickness TVL1 may be 0.1 to 0.3 nanometers.

As an optional embodiment, a process of applying the initialization electric field to the active layer 110 before the first voltage is applied to the active layer 110 through the application electrode 120 may be performed.

Through the process of applying this initialization electric field to the active layer 110, the step of converting the region of the active layer 110 to a polarization in a direction different from that of the polarization region 110F, for example, a polarization region in the opposite direction. .

Then, the polarization region 110F may be formed in one region by applying an electric field in the opposite direction.

The first variation low-resistance region VL1 formed at the boundary of the polarization region 110F of the active layer 110 may change to a region having a lower resistance than other regions of the active layer 110 . For example, the first variation low resistance region VL1 may have a lower resistance than the polarization region 110F of the active layer 110 and a region of the active layer 110 surrounding the first variation low resistance region VL1 .

Through this, the first variation low resistance region VL1 may form a current passage.

As an optional embodiment, the first variation low resistance region VL1 may correspond to one region of a plurality of domain walls provided in the active layer 110 .

Also, the first variation low resistance region VL1 may be continuously maintained when the polarization state of the polarization region 110F of the active layer 110 is maintained. That is, even if the first voltage applied to the active layer 110 through the application electrode 120 is removed, the state of the variable low resistance region VL1 , that is, the low resistance state may be maintained.

As shown in FIGS. 10 and 11 , a current path may be formed through the first variation low resistance region VL1 . However, since the connection electrode parts 131 and 132 do not correspond to the first variable low resistance region VL1 , the flow of current through the connection electrode parts 131 and 132 may not occur.

13 is a view illustrating a state in which the first electric field is further maintained for a predetermined time through the applying electrode 120 , and FIG. 14 is a cross-sectional view taken along the line XI-XI of FIG. 13 .

Referring to FIGS. 13 and 14 , the duration of the first electric field through the application electrode 120 is increased, so that the polarization region 110F of FIGS. 10 and 11 moves in a horizontal direction to increase the polarization region 110F and, accordingly, A second variation low resistance region VL2 larger than the first variation low resistance region VL1 may be formed.

For example, the structure shown in FIGS. 13 and 14 may be formed by continuously maintaining the voltage applied in FIGS. 10 and 11 for a predetermined time.

The polarization region 110F may have a shape that surrounds the application electrode 120 with the application electrode 120 as a center. The polarization region 110F may have a boundary line. The second variation low resistance region VL2 may be formed in a region corresponding to the side of the boundary line of the polarization region 110F. Referring to FIG. 13 , the application electrode 120 may be formed in a linear shape surrounding the application electrode 120 .

For example, the second variable low resistance region VL2 may have a second width WVL2 in one direction to surround the application electrode 120 , and the second width WVL2 may be greater than the first width WVL1 . can That is, the second variation low resistance region VL2 may make one circumference of the application electrode 120 .

In addition, the second variation low resistance region VL2 may be formed to correspond to the entire side surface of the boundary line of the polarization region 110F, and may have a thickness in a direction away from the side surface of the polarization region 110F, an optional embodiment As such, this thickness may be 0.1 to 0.3 nanometers.

The second variation low resistance region VL2 formed at the boundary of the polarization region 110F of the active layer 110 may change to a region having a lower resistance than other regions of the active layer 110 . For example, the second variation low resistance region VL2 may have a lower resistance than the polarization region 110F of the active layer 110 and a region of the active layer 110 surrounding the second variation low resistance region VL2 . That is, the resistance of the second variation low resistance region VL2 is lower than the resistance of the inner portion of the second variation low resistance region VL2 of the polarization region 110F. In addition, the resistance of the second variation low resistance region VL2 may be lower than the resistance of the portion outside the second variation low resistance region VL2 of the active layer 110 .

Through this, the second variation low resistance region VL2 may form a current passage.

As an optional embodiment, the second variation low resistance region VL2 may correspond to one region of a plurality of domain walls provided in the active layer 110 .

Also, the second variation low resistance region VL2 may be continuously maintained when the polarization state of the active layer 110 is maintained. That is, even if the second voltage applied to the active layer 110 through the application electrode 120 is removed, the state of the second variable low resistance region VL2 , that is, the low resistance state may be maintained.

Therefore, a current passage may be formed through the second variation low resistance region VL2 .

In addition, as a specific example, the connection electrode parts 131 and 132 are formed to correspond to the second variable low resistance region VL2, for example, the first connection electrode member 131 of the connection electrode parts 131 and 132 and The second connection electrode members 132 may be disposed to be in contact with the upper surface of the second variable low resistance region VL2 while being spaced apart from each other.

Through this, current may flow through the first connection electrode member 131 and the second connection electrode member 132 of the connection electrode parts 131 and 132 .

In addition, various electrical signals may be generated. For example, when the electric field in the state of FIGS. 13 and 14 is applied more continuously, that is, when the application time increases, the second variable low resistance region VL2 moves further, and the first connection electrode member 131 and the second 2 It is possible to escape the connection electrode member 132 . Accordingly, current may not flow through the first connection electrode member 131 and the second connection electrode member 132 .

In addition, as an optional embodiment, an initialization process for the entire active layer 110 may be performed.

Then, when an electric field is applied to the active layer 110 through the application electrode 120 again, current flows through the first connection electrode member 131 and the second connection electrode member 132 of the connection electrode parts 131 and 132 . can

The electronic circuit of the present embodiment can apply voltages of various magnitudes to the active layer through the application electrode, and can control the time for which the voltage is applied.

Through this, a polarization region can be formed in the active layer with a region of a desired size, and a low variation resistance region can be formed at the boundary of the polarization region.

When the connection electrode portion is formed to correspond to, for example, contact with, such a fluctuating low-resistance region, a current may flow through the connection electrode portion, and even if the voltage is removed, the active layer containing the ferroelectric material may maintain a polarized state. The fluctuating low-resistance region of its boundary can also be maintained so that current can continue to flow.

In addition, a voltage may be applied to the active layer through the application electrode to change the variable low resistance region into the polarization region, and through this, the current does not flow through the connection electrode portion through which the current flows.

The current flow can be controlled by controlling the voltage of the applied electrode, and the electronic circuit can be used for various purposes through the control of the current flow.

In an alternative embodiment, the electronic circuit may be used as a memory.

For example, it can be used as a memory by defining the flow of current as 1 and no flow as 0.

In addition, the electronic circuit may constitute a circuit unit that generates and transmits various signals, and may also be used as a switching device.

In addition, since it can be applied with a simple structure to other parts requiring control of electrical signals, it can be applied to various fields such as variable circuits, CPUs, and biochips.

15 is a schematic cross-sectional view showing an electronic device according to another embodiment of the present invention, and FIG. 16 is a schematic enlarged view enlarged to explain A of FIG. 15 .

The electronic device 200 of the present embodiment may include an active layer 210 , an application electrode 220 , a variable low resistance region VL2 , and one or more connection electrode units 231 and 232 . The active layer 210 has spontaneous polarization and may control the degree and direction of polarization according to the application of an electric field. Also, the active layer 210 may maintain a polarized state even when the applied electric field is removed.

The active layer 210 may include a spontaneously polarizable material. For example, the active layer 210 may include an insulating material and a ferroelectric material. That is, the active layer 210 may include a material having a spontaneous electrical polarization (electric dipole) that can be reversed in the presence of an electric field.

The active layer 210 as an alternative embodiment may comprise a perovskite-based material, for example, may include _{BaTiO 3, SrTiO 3, BiFe3,} PbTiO3, PbZrO3, SrBi2Ta2O9.

Also, as another example, the active layer 210 has an ABX3 structure, where A is an alkyl group of CnH2n+1, and at least one material selected from inorganic materials such as Cs and Ru capable of forming a perovskite solar cell structure, B may include at least one material selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 11 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _{3 ,} CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH _{3 )} NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1-y PbCl x} Br _3-x (0≤x, y≤1) can do.

The active layer 210 may be formed using various other ferroelectric materials, and descriptions of all examples thereof will be omitted. In addition, when the active layer 210 is formed, the ferroelectric material may be doped with various other materials to include additional functions or to improve electrical properties.

The active layer 210 has spontaneous polarization and may control the degree and direction of polarization according to the application of an electric field. Also, the active layer 210 may maintain a polarized state even when the applied electric field is removed. The application electrode 220 may be formed to apply an electric field to the active layer 210 , for example, to apply a voltage to the active layer 210 . The application electrode 220 may be formed to apply an electric field to the active layer 210 , for example, to apply a voltage to the active layer 210 . As an optional embodiment, the application electrode 220 may be formed to be in contact with the upper surface of the active layer 210 . A detailed description of the application electrode 220 will be omitted since it can be applied in the same or similar manner as described in the above-described embodiment.

When the first electric field is applied to the active layer 210 through the application electrode 220 , at least one region of the active layer 210 may include a polarization region 210F, and the polarization region 210F may include the application electrode 220 . It may be in a shape surrounding the application electrode 220 . Also, the polarization region 210F may have a boundary line.

The variable low resistance region VL2 may be formed in a region corresponding to the side of the boundary line of the polarization region 210F.

The variable low resistance region VL2 may be changed to a region having a lower resistance than other regions of the active layer 210 .

For example, a polarization direction of one region of the active layer 210 and a region facing the same with the variable low resistance region VL2 interposed therebetween may be opposite to each other.

As a specific example, the polarization direction of the polarization region 210F overlapping the application electrode 220 and the other region of the active layer 210 adjacent to each other with the variable low resistance region VL2 interposed therebetween (the outside of the polarization region 210F in FIG. 15 ) The polarization directions of the region of ) may be opposite to each other.

The variable low resistance region VL2 is a region having a low resistance and may form a path for a current.

As an optional embodiment, the variable low resistance region VL2 may correspond to one region of a plurality of domain walls provided in the active layer 210 .

Also, the variable low resistance region VL2 may be continuously maintained when the polarization state of the polarization region 210F of the active layer 210 is maintained. That is, even if the first voltage applied to the active layer 210 through the application electrode 220 is removed, the state of the variable low resistance region VL2 , that is, the low resistance state may be maintained.

The connection electrode parts 231 and 232 may include one or more electrode members, for example, a first connection electrode member 231 and a second connection electrode member 232 .

The connection electrode parts 231 and 232 may be formed to overlap the active layer 210 and to be spaced apart from the application electrode 220 .

The first connection electrode member 231 and the second connection electrode member 232 may be formed using various conductive materials.

As an optional embodiment, the first connection electrode member 231 and the second connection electrode member 232 may be terminal members including input/output of electrical signals.

Also, as a specific example, the first connection electrode member 231 and the second connection electrode member 232 may include a source electrode or a drain electrode, and the first connection electrode member 231 is a source electrode and a second connection electrode The member 232 may be a drain electrode.

FIG. 16 is a schematic enlarged view enlarged to explain A of FIG. 15 .

Referring to FIG. 16 , the active layer 210 may have a layered structure. For example, the active layer 210 may include crystal structure layers having different compositions.

Referring to FIG. 16 , the active layer 210 shows that the first component layer 210a and the second component layer 210b are formed adjacent to each other in the thickness direction of the active layer 210 .

As an optional embodiment, the active layer 210 may be easily formed using perovskite having a layered structure.

As described above, polarization directions F1 and F2 of one region and an adjacent region are different with respect to the variable low resistance region VL2. For example, the polarization direction F1 of the polarization region 210F may be opposite to the polarization direction F2 of the region adjacent thereto.

FIG. 17 is a diagram illustrating an alternative embodiment of FIG. 16 .

Referring to FIG. 17 , the active layer 210 has a layered structure, and may include, for example, a layered structure of a first component layer 210a and a second component layer 210b.

The first component layer 210a and the second component layer 210b may have different crystal structures. Through this, electrical characteristics of the first component layer 210a and the second component layer 210b may be different, for example, the electrical resistance of the first component layer 210a may be higher than that of the second component layer 210b. there is.

As an optional embodiment, the first component layer 210a may include a Bi-based oxide, for example, a Bi2O2 layer. Also, the second component layer 210b may have an octahedral structure.

As an optional embodiment, for this purpose, the active layer 210 may be easily formed using perovskite having a layered structure, and may include, for example, SrBi2Ta2O9, Bi4Ti3O12 or Bi2WO6.

As described above, a current flow may be generated through the generation of the variable low resistance region VL2 in the active layer 210 , for example, an on current may flow.

In addition, when the variable low-resistance region VL2 disappears through the control of the applied electrode, it becomes an off state. The smaller the current in this state, that is, the off current, the more it is preferable for precise control of the electronic device. For example, the on/off ratio can be increased.

The value of the off current may be reduced through the high resistance of the first component layer 210a of the present embodiment.

In addition, the second component layer ( By reducing or blocking the flow of abnormal current to 210b), the efficiency of the electronic device may be improved.

18 is a diagram illustrating another alternative embodiment of FIG. 16 .

Referring to FIG. 18 , the active layer 210 ′ has a layered structure, and may include a plurality of unit layered structures as an optional embodiment, for example, a first unit layered structure 210ab1 and a second unit layered structure 210ab2 . ), a third unit layered structure 210ab3 and a fourth unit layered structure 210ab4 may be included.

Although not shown, the active layer 210 ′ may include various number of unit layer structures in addition to the above four.

The first unit layered structure 210ab1 may include a first component layer 210a1 and a second component layer 210b1 .

The first component layer 210a1 and the second component layer 210b1 may have different crystal structures. Through this, electrical characteristics of the first component layer 210a1 and the second component layer 210b1 may be different, for example, the electrical resistance of the first component layer 210a1 may be higher than that of the second component layer 210b1. there is.

As an optional embodiment, the first component layer 210a1 may include a Bi-based oxide, for example, a Bi2O2 layer. Also, the second component layer 210b1 may have an octahedral structure.

Each of the second unit layered structure 210ab2, the third unit layered structure 210ab3, and the fourth unit layered structure 210ab4 has a first component layer 210a2, 210a3, 210a4 and a second component layer 210b2, 210b3, 210b4), each of which may be the same as the first component layer 210a1 and the second component layer 210b1 of the first unit layered structure 210ab1.

As an optional embodiment, the active layer 210 ′ may be easily formed using perovskite having a layered structure, and may include, for example, SrBi2Ta2O9, Bi4Ti3O12 or Bi2WO6.

As described above, a current flow may be generated through the generation of the variable low resistance region VL2 in the active layer 210 ′, for example, an on current may flow.

In addition, when the variable low-resistance region VL2 disappears through the control of the applied electrode, it becomes an off state. The smaller the current in this state, that is, the off current, the more it is preferable for precise control of the electronic device. For example, the on/off ratio can be increased.

The value of the off current may be reduced through the high resistance of the first component layer 210a1 of the present embodiment.

In addition, the second component layer ( By reducing or blocking the flow of abnormal current to 210b1), the efficiency of the electronic device may be improved.

In addition, the active layer 210' may include a second unit layered structure 210ab2, a third unit layered structure 210ab3, and a fourth unit layered structure 210ab4 under the first unit layered structure 210ab1, and , thus effectively reducing or blocking an off current when the variable low resistance region VL2 is extinguished, thereby improving precise control characteristics of the electronic device.

In the electronic device of the present embodiment, a polarization region having a polarization direction in one direction may be formed in the active layer by application of a voltage through an applying electrode, and a variable low resistance region may be formed at the boundary of the polarization region. For example, one side of the active layer may have a polarization direction in one direction, and the other side may have a polarization direction in the opposite direction with respect to the variable low resistance region as a boundary.

The variable low resistance region is a region in which resistance is lowered, and a flow of current through the first connection electrode member and the second connection electrode member may be formed.

At this time, the active layer may include a layered structure including a first component layer and a second component layer of different components, for example, to easily implement the active layer in a layered structure of different materials using a layered perovskite structure. can

In the electronic device of the present embodiment, current can easily flow through the low-variable resistance region formed in the active layer.

In addition, it is possible to reduce or block the flow of current in the electronic device according to the control of the applied electrode. By reducing the value of the off current through the layered structure of the active layer, the on/off ratio is improved and the precise control characteristics of the electronic device can be improved. can

For example, the second component layer having a high electrical resistance may be adjacent to or in contact with the connection electrode part to reduce the value of the off current. In addition, it is possible to suppress or reduce the flow of current in the direction from the first component layer to the second component layer, and as an optional embodiment, a current blocking effect in this direction can be improved through a plurality of unit layered structures.

Through this, it is possible to easily implement a precisely controlled electronic device structure.

19 is a schematic cross-sectional view illustrating an electronic device according to another embodiment of the present invention.

The electronic device 200" of the present embodiment may include an active layer 210", an application electrode 220", a variable low resistance region VL, and one or more connection electrode units 231" and 232". The electrode 220" may be formed on one surface of the active layer 210", for example, may be formed to be in contact with one surface.

The first connection electrode member 231 ″ and the second connection electrode member 232 ″ of the connection electrode units 231″ and 232″ may be formed to face one surface of the active layer 210″, for example, The electrode 220 ″ may be disposed to face the opposite surface of the surface on which it is formed.

When the first electric field is applied to the active layer 210" through the application electrode 220", at least one region of the active layer 210" may include a polarization region 210F', and the polarization region 210F' The application electrode 220" may have a shape surrounding the application electrode 220". Also, the polarization region 210F' may have a boundary line.

The variable low resistance region VL may be formed in a region corresponding to the side of the boundary line. The variable low resistance region VL may be changed to a region having a lower resistance than other regions of the active layer 210 ″.

For example, a polarization direction of one region of the active layer 210 ″ and a region facing the same with the variable low resistance region VL interposed therebetween may be opposite to each other.

As a specific example, the polarization direction of the polarization region 210F ″ overlapping the application electrode 220 ″ and another region (polarization region 210F in FIG. 17 ) of the active layer 210 ″ adjacent to the variable low resistance region VL interposed therebetween. The polarization directions of regions outside of ') may be opposite to each other.

The variable low-resistance region VL is a region having a low resistance and may form a path for a current.

As an optional embodiment, the variable low resistance region VL may correspond to one region of a plurality of domain walls provided in the active layer 210 ″.

In addition, the variable low resistance region VL may be continuously maintained when the polarization state of the polarization region 210F' of the active layer 210" is maintained. That is, the active layer 210" through the application electrode 220". The state of the variable low-resistance region VL, that is, the low-resistance state, may be maintained even if the first voltage applied thereto is removed.

Although not shown, the description of the structure of the active layer of FIGS. 16 to 18 can be selectively applied to the present embodiment.

For example, the active layer 210" may have a layered structure, for example, may include a layered structure of a first component layer and a second component layer, and use a layered perovskite as an optional embodiment. Through this, the overall on/off ratio of the electronic device can be increased and precise control characteristics can be improved. FIG. 20 is a schematic plan view of an electronic device according to another embodiment of the present invention. , FIG. 21 is a cross-sectional view taken along line VI-VI of FIG. 20 .

20 and 21 , the electronic device 300 based on the variable low resistance region may include an active layer 310 , a gate 320 , a source 331 , and a drain 332 .

The active layer 310 may include the above-described active layer material, for example, a spontaneously polarizable material. For example, the active layer 310 may include an insulating material and a ferroelectric material. That is, the active layer 310 may include a material having a spontaneous electrical polarization (electric dipole) that can be reversed in the presence of an electric field.

As an alternative embodiment the active layer 310 may comprise a perovskite-based material, for example, it may include _{BaTiO 3, SrTiO 3, BiFe3,} PbTiO3, PbZrO3, SrBi2Ta2O9.

Also, as another example, the active layer 310 has an ABX3 structure, where A is an alkyl group of CnH2n+1, and at least one material selected from inorganic materials such as Cs and Ru capable of forming a perovskite solar cell structure, B may include at least one material selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 310 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _{3 ,} CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH _{3 )} NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1-y PbCl x} Br _3-x (0≤x, y≤1) can do.

Since the active layer 310 may be formed using various other ferroelectric materials, a description of all examples thereof will be omitted. In addition, when the active layer 310 is formed, the ferroelectric material may be doped with various other materials to include additional functions or to improve electrical properties.

The active layer 310 has spontaneous polarization and can control the degree and direction of polarization according to application of an electric field. Also, the active layer 310 may maintain a polarized state even when the applied electric field is removed.

Although not shown, the description of the structure of the active layer of FIGS. 16 to 18 can be selectively applied to the present embodiment.

For example, the active layer 310 may have a layered structure, for example, may include a layered structure of a first component layer and a second component layer, and as an optional embodiment, using a layered perovskite structure can be formed Through this, the overall on/off ratio of the electronic device may be increased and precise control characteristics may be improved.

The active layer 310 may include a second region 312 and a first region 311 positioned adjacent to each other in the X-Y plane direction and having different polarization directions for at least a predetermined time according to an applied voltage. The first region 311 may have polarization in a first direction, and the first direction is a thickness direction of the active layer 310 , that is, a direction in which the second region 312 and the first region 311 are disposed. may be in the Z-direction perpendicular to .

The second region 312 is positioned adjacent to the first region 311 in a direction perpendicular to the thickness, that is, in the XY plane direction, and the second region 312 is selectively disposed in a second region opposite to the first direction. It can have polarization aligned in two directions.

A gate 320 may be positioned on the active layer 310 . Although not shown in the drawing, the gate 320 may be connected to a separate device to receive a gate signal.

The polarization of the first region 311 in the opposite direction to that of the second region 312 is enabled by a voltage applied to the gate 320 .

As described above, a low-variation resistance region 340 may be formed between the second region 312 and the first region 311 having polarizations in opposite directions. The variable low-resistance region 340 is a region having a very small resistance compared to the second region 312 and/or the first region 311 , and a current may flow through this region.

The variable low resistance region 340 may be formed according to the following exemplary embodiment.

First, the active layer 310 including the spontaneously polarizable material may have polarization in the first direction as a whole. The entire active layer 310 is not necessarily limited to having the polarization in the first direction, and at least a predetermined area of the active layer 310 facing the gate 320 may have the polarization in the first direction. Optionally, the first direction polarization may be formed by applying an initialization electric field to the gate 320 .

In this state, as a first voltage is applied to the gate 320 for a first time and an electric field is applied to the active layer 310 through the gate 320, a certain area opposite to the gate 320 is polarized in the second direction. will change The electric field applied to the gate 320 to change the direction of polarization may be adjusted by the first voltage, that is, the first voltage so that an electric field greater than the coercive field of the spontaneously polarizable material forming the active layer 310 is applied. can be added

The active layer 310 may have a first thickness t1. In this case, the second region 312 is formed over the entire first thickness t1 , and the magnitude of the first voltage applied to the gate 320 may be adjusted according to the first thickness t1 . According to an embodiment, the first thickness t1 and the magnitude of the first voltage applied to the gate 320 may be proportional to each other. That is, when the first thickness t1 is thick, the first voltage may be increased.

As shown in FIG. 21 , the variable low resistance region 340 may be formed over the entire first thickness t1 .

The area of the second region 312 formed in this way may be determined in proportion to the first time the first voltage is applied to the gate 320 .

Therefore, in order to form the second region 312 of a desired area and/or size, an appropriate gate voltage, time, and first thickness t1 of the second region 312 for the corresponding ferroelectric material must be tested and/or calculated. can be determined in advance by

When the polarization direction of the second region 312 is changed from the first direction to the second direction, the space between the first region 311 having the polarization in the first direction and the second region 312 having the polarization in the second direction is changed. A variable low-resistance region 340 having a predetermined width may be formed in the . The variable low resistance region 340 may be formed around the gate 320 .

The sources and drains 331 and 332 may be formed to overlap the active layer 310 and to be spaced apart from the gate 320 .

The source 331 and the drain 332 may be formed to overlap the variable low resistance region 340 . For example, the source 331 and the drain 332 may be formed to contact the variable low resistance region 340 .

22 is a graph illustrating a voltage and current relationship between the first region and the variable low resistance region.

Specifically, FIG. 22 shows a state in which the current changes as the voltage increases in the first region and the variable low resistance region.

That is, in FIG. 22, (a) shows a state in which the current changes as the voltage increases in the variable low resistance region, and (b) shows a state in which the current changes as the voltage increases in the first region 311. .

Since the variable low-resistance region 340 has a very small resistance compared to the first region 311 , it can be seen that the current flows smoothly according to the voltage application.

The variable low resistance region 340 formed as described above may not be erased over time.

When the source 331 and the drain 332 are positioned so as to be in contact with the low variation low resistance region 340 formed in this way, current flows from the source 331 to the drain 332 through the low variation low resistance region 340 . can be formed. Therefore, data writing is possible at this time, and it can be read, for example, as 1.

Optionally, the variable low resistance region 340 may be erased by making the polarization direction of the second region 312 the same as the polarization direction of the first region 311 by the voltage applied to the gate 320 .

That is, by applying the second voltage to the gate 320 , the polarization direction of the second region 312 may be changed to the first direction again. Thereafter, by maintaining the second voltage for a second time, a region in which the polarization is changed in the first direction may be grown in a planar direction, and the region in which the polarization is changed in the first direction passes through the variable low resistance region 340 to generate a first When extended to the region 311 , the variable low resistance region 340 may disappear. In this case, current cannot flow from the source 331 to the drain 332 , and thus, data erasure is possible at this time, and can be read as 0.

In this case, the second voltage may be a voltage different from the first voltage, and may have the same magnitude and opposite polarity as the first voltage according to an exemplary embodiment. The second time period may be at least equal to or longer than the first time period.

In addition, as another alternative embodiment for erasing the variable low resistance region 340 , if the first voltage applied to the gate 320 is continuously applied to form the second region 312 , the second region 312 is It grows in a horizontal direction and, accordingly, the overall polarization direction of the first region 311 is reversed to be converted into the second region 312 , and thus the variable low resistance region 340 may disappear.

The low-variable-resistance region-based electronic device formed as described above can be used as a non-volatile memory device because the aforementioned low-variable resistance region 340 can maintain its state even when power is turned off to the gate 320 .

Since the variable low-resistance region memory device is ^{capable of writing/erasing about 10 12} times, it may have a memory lifespan of ^{about 10 7} times that of a conventional semiconductor device-based memory device.

In terms of memory speed, the variable low-resistance region memory device can be about 10 ^-9 sec, so that the memory speed can be increased by ^{about 10 6} times compared to the conventional semiconductor device-based memory device.

As such, the variable low-resistance region memory device may be a memory device having very excellent speed and lifespan.

In addition, since the position at which the variable low-resistance region 340 is formed can be adjusted according to the gate voltage and/or the application time, various memory devices can be designed, and the thickness can be reduced compared to the existing ferroelectric memory devices using ferroelectric materials. can achieve In addition, there is an advantage in that the degree of integration of the device can be increased because the degree of freedom in designing the memory is increased.

The variable low resistance region 340 formed in this way may be formed in a closed loop shape with the gate 320 as the center, and by disposing the source 331 and the drain 332 in a part of the closed loop, the source 331 is formed. There may be two lines connecting the and drain 332 . However, the present invention is not necessarily limited thereto, and when a gate is positioned on one side of the active layer in a planar direction and a source and drain are disposed on two adjacent sides, the low-variation resistance region may become a single line connecting the source and the drain.

The source 331 and the drain 332 as described above may be an electrode structure formed by patterning on the active layer 310, but the present invention is not limited thereto, and although not shown in the drawings, the active layer 310 is formed. It may be in contact with the variable low resistance region 340 through a via hole formed in the insulating layer covering it.

23 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.

Referring to FIG. 23 , in the variation low-resistance region-based electronic device 400 , a source 431 and a drain 432 are formed on a substrate 430 , and an active layer including a spontaneously polarizable material on the substrate 430 ( 410) can be placed. For example, the electronic device 400 may be a memory device.

The substrate 430 may be formed of a semiconductor wafer, or a silicon wafer according to an embodiment. In addition, the source 431 and the drain 432 may be formed by ion doping on the wafer. Of course, although not shown in the drawings, an external signal line may be connected to the source 431 and the drain 432 through separate vias.

In this structure, the gate voltage and the application time may be determined so that the variable low resistance region 440 may be positioned to correspond to the regions of the source 431 and the drain 432 formed on the substrate 430 .

The substrate 430 and the active layer 410 as described above may be bonded by a separate adhesive layer, but the present invention is not limited thereto, and the active layer 410 may be formed on the substrate 430 . By implementing the active layer 410 as a thin film on the substrate 430 in this way, the memory device 400 can be made thinner, and the existing memory device process can be used, thereby further increasing the efficiency of the manufacturing process.

The variable low-resistance region 440 is formed between the first region 411 and the second region 412, which are regions having different polarization directions from each other, and a detailed description thereof will be omitted since it is similar to the above-described embodiment.

Although the case where the first region 411 and the second region 412 have the same thickness is illustrated, the present invention is not limited thereto.

The sources and drains 431 and 432 may be formed to overlap the active layer 410 and to be spaced apart from the gate 420 .

The source 431 and the drain 432 may be formed to overlap the variable low resistance region 440 . For example, the source 431 and the drain 432 may be formed to contact the variable low resistance region 440 .

Although not shown, the description of the structure of the active layer of FIGS. 16 to 18 can be selectively applied to the present embodiment.

For example, the active layer 410 may have a layered structure, for example, may include a layered structure of a first component layer and a second component layer, using a layered perovskite as an optional embodiment. can be formed Through this, the overall on/off ratio of the electronic device may be increased and precise control characteristics may be improved.

24 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.

* For convenience of description, different points from the above-described embodiment will be mainly described.

Referring to FIG. 24 , in the variation low resistance region-based electronic device 500 , a source 531 and a drain 532 are formed on a substrate 530 , and an active layer including a spontaneously polarizable material on the substrate 530 ( 510) may be disposed. For example, the electronic device 500 may be a memory device.

In the electronic device 500 of the embodiment shown in FIG. 24 , the first region 511 may have a second thickness t2 that is thicker than the first thickness t1 of the second region 512 . The second thickness t2 is a thickness at which the direction of polarization is not switched by the voltage applied to the gate 520, and accordingly, the variable low resistance region 540 has the first thickness t1 and the second thickness ( t2) may be formed at a boundary position.

As described above, since the voltage applied to the gate 520 can be set to a voltage at which polarization switching is performed with respect to the first thickness t1, by making a region formed with the second thickness t2 in the active layer 510 , the variable low-resistance region 540 is not formed in the second thickness t2 even by the intensity and time of the voltage applied to the gate 520 , and only the variable-low-resistance region 540 is formed in the first thickness t1 . ) can be formed.

That is, as can be seen in FIG. 24 , the variable low resistance region 540 may be formed at a position that becomes a boundary between the first thickness t1 and the second thickness t2 .

The active layer 510 may be disposed to overlap the source 531 and the drain 532 , and as a specific example, the active layer 510 may contact the source 531 and the drain 532 .

The source 531 and the drain 532 may be formed to overlap the active layer 510 and to be spaced apart from the gate 520 .

The source 531 and the drain 532 may be formed to overlap the variable low resistance region 540 . For example, the source 531 and the drain 532 may be formed to contact the variable low resistance region 540 .

Although not shown, the description of the structure of the active layer of FIGS. 16 to 18 can be selectively applied to the present embodiment.

For example, the active layer 510 may have a layered structure, for example, may include a layered structure of a first component layer and a second component layer, using a layered perovskite as an optional embodiment. can be formed Through this, the overall on/off ratio of the electronic device may be increased and precise control characteristics may be improved.

25 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.

* Referring to FIG. 25 , in the variation low resistance region-based electronic device 600 , a source 631 and a drain 632 are formed on a substrate 630 , and an active layer including a spontaneously polarizable material on the substrate 630 . 610 may be disposed.

For example, the electronic device 600 may be a memory device.

In the electronic device 600 of the embodiment shown in FIG. 25 , as in the embodiment shown in FIG. 24 , the first region 611 has a second thickness t2 that is thicker than the first thickness t1 of the second region 612 . can have

At this time, depending on the time when the voltage is applied to the gate 620 , as can be seen in FIG. 25 , the first thickness t1 varies from the boundary between the first thickness t1 and the second thickness t2 to the inside where the first thickness t1 is formed. A low-resistance region 640 may be located. Accordingly, in the memory device 600 having this structure, the source 631 and the drain 632 may be formed inside the boundary between the first thickness t1 and the second thickness t2 . Accordingly, even if the formation position of the variable low resistance region 640 is changed according to the change in the intensity of the voltage of the gate 620 and/or the time thereof, the variable low resistance region 640 and the source 631/drain 632 are can be electrically connected.

In the above-described embodiments, the gate is formed adjacent to the active layer, but the present invention is not limited thereto.

The variable low resistance region 640 is formed between the first region 611 and the second region 612 , which are regions having different polarization directions from each other, and a detailed description thereof will be omitted since it is similar to the above-described embodiment.

The source 631 and the drain 632 may be formed to overlap the active layer 610 and to be spaced apart from the gate 620 .

The source 631 and the drain 632 may be formed to overlap the variable low resistance region 640 . For example, the source 631 and the drain 632 may be formed to contact the variable low resistance region 640 .

Although not shown, the description of the structure of the active layer of FIGS. 16 to 18 can be selectively applied to the present embodiment.

For example, the active layer 610 may have a layered structure, for example, may include a layered structure of a first component layer and a second component layer, using a layered perovskite as an optional embodiment. can be formed Through this, the overall on/off ratio of the electronic device may be increased and precise control characteristics may be improved.

26 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.

Referring to FIG. 26 , in the electronic device 700 , another layer 750 may be further positioned between the active layer 710 and the gate 720 . The layer 750 may be an insulating layer, and may be a different material from the ferroelectric material forming the active layer 710 .

The electronic device 700 may be, for example, a memory device.

Even in this case, the polarization direction of the second region 712 may be switched under the influence of the electric field by the voltage applied to the gate 720 , and in this case, the gate 720 voltage and/ Alternatively, the time may be obtained in advance by experimentation and/or calculation. Descriptions of the variable low-resistance region 740 , the source 731 , and the drain 732 are the same as in the above-described embodiment, and thus a detailed description thereof will be omitted.

The variable low resistance region 740 is formed between the first region 711 and the second region 712 , which are regions having different polarization directions from each other, and a detailed description thereof will be omitted since it is similar to the above-described embodiment.

The source 731 and the drain 732 may be formed to overlap the active layer 710 and to be spaced apart from the gate 720 .

The source 731 and the drain 732 may be formed to overlap the variable low resistance region 740 . For example, the source 731 and the drain 732 may be formed to contact the variable low resistance region 740 .

Although not shown, the description of the structure of the active layer of FIGS. 16 to 18 can be selectively applied to the present embodiment.

For example, the active layer 710 may have a layered structure, for example, may include a layered structure of a first component layer and a second component layer, using a layered perovskite as an optional embodiment. can be formed Through this, the overall on/off ratio of the electronic device may be increased and precise control characteristics may be improved.

27 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.

Referring to FIG. 27 , in the variation low-resistance region electronic device 800 , a source 831 and a drain 832 are formed on a substrate 830 , and an active layer 810 including a spontaneous polarization material is formed on the substrate 830 . ) can be placed.

For example, the electronic device 800 may be a memory device.

According to the embodiment shown in FIG. 27 , a first gate 821 facing the active layer 810 and a second gate 822 positioned on the opposite side to the first gate 821 with respect to the active layer 810 are included. can do.

In this case, the variable low resistance region 840 may be formed by switching the polarization direction of the second region 812 by the first gate 821 . Accordingly, data writing becomes possible.

By switching the polarization direction of the second region 812 again as in the first region 811 by the second gate 822 , the variable low resistance region 840 may be removed. This makes it possible to erase data.

As such, data may be read as 0/1 by the first gate 821 and the second gate 822 .

Of course, all the embodiments of the present specification described above are not limited to the illustrated embodiments, and may be applied in combination with each other.

In addition, it goes without saying that these embodiments can be selectively applied or modified to the embodiments to be described later.

The variable low-resistance region 840 is formed between the first region 811 and the second region 812, which are regions having different polarization directions from each other, and a detailed description thereof will be omitted since it is similar to the above-described embodiment.

Although the case where the first region 811 and the second region 812 have the same thickness is illustrated, the present invention is not limited thereto.

The source 831 and the drain 832 may be formed to overlap the active layer 810 and to be spaced apart from the first gate 821 and the second gate 822 .

The source 831 and the drain 832 may be formed to overlap the variable low resistance region 840 . For example, the source 831 and the drain 832 may be formed to contact the variable low resistance region 840 .

Although not shown, the description of the structure of the active layer of FIGS. 16 to 18 can be selectively applied to the present embodiment.

For example, the active layer 310 may have a layered structure, for example, may include a layered structure of a first component layer and a second component layer, and as an optional embodiment, using a layered perovskite structure can be formed Through this, the overall on/off ratio of the electronic device may be increased and precise control characteristics may be improved.

28 and 29 are cross-sectional views schematically illustrating an example of an electronic device according to an embodiment of the present invention.

30 is a schematic enlarged view enlarged to explain K of FIG. 29 .

28 and 29 , an electronic device 900 according to an embodiment of the present invention includes a first electrode 910 , a second electrode 920 facing the first electrode 910 , and a first electrode ( An active layer 930 interposed between the 910 and the second electrode 920 may be included.

At least one of the first electrode 910 and the second electrode 920 includes a first surface S1 closest to the active layer 930 and a second surface S2 most distant from the active layer 930, , in this case, the size of the horizontal cross-sectional area on the first surface S1 may be smaller than the size of the horizontal cross-sectional area on the second surface S2. For example, at least one of the first electrode 910 and the second electrode 920 may include at least one protrusion 912 protruding in a direction toward the other electrode.

28 and 29 illustrate that the first electrode 910 includes one protrusion 912 as an example, but the present invention is not limited thereto, and the protrusion 912 is attached to the second electrode 920 . Alternatively, it may be formed on both the first electrode 910 and the second electrode 920 . In addition, a plurality of protrusions 912 may be formed. The protrusion 912 may be integrally formed with the first electrode 910 .

The first electrode 910 and the second electrode 920 may include a metal material such as platinum, gold, aluminum, silver or copper, a conductive polymer such as PEDOT:PSS or polyaniline, and indium oxide (eg, In ₂ O). ₃ ), tin oxide (eg SnO ₂ ), zinc oxide (eg ZnO), indium tin oxide alloy (eg In ₂ O _{3 -} SnO ₂ ) or indium zinc oxide alloy (eg In ₂ O ₃ - ZnO) and the like.

The active layer 930 may include a spontaneously polarizable material. For example, the active layer 930 may include an insulating material and a ferroelectric material. That is, the active layer 930 may include a material having a spontaneous electrical polarization (electric dipole) that can be reversed in the presence of an electric field.

As an alternative embodiment the active layer 930 may comprise a perovskite-based material, for example, it may include _{BaTiO 3, SrTiO 3, BiFe3,} PbTiO3, PbZrO3, SrBi2Ta2O9.

Also, as another example, the active layer 930 has an ABX3 structure, where A is an alkyl group of CnH2n+1, and at least one material selected from inorganic materials such as Cs and Ru capable of forming a perovskite solar cell structure, B may include at least one material selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 930 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _{3 ,} CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH _{3 )} NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1-y PbCl x} Br _3-x (0≤x, y≤1) can do.

The active layer 930 has spontaneous polarization and can control the degree and direction of polarization according to the application of an electric field. Also, the active layer 930 may maintain a polarized state even when the applied electric field is removed.

Meanwhile, the active layer 930 may include a first area A1 overlapping the first surface S1 in a vertical direction and a second area A2 outside of the first area A1 . As described above, since the horizontal cross-sectional area of the first surface S1 closest to the active layer 930 is narrower than the horizontal cross-sectional area of the second surface S2, the active layer 930 is vertically aligned with the first surface S1. A thickness in the overlapping first area A1 may be smaller than a thickness in the second area A2 .

As shown in FIG. 28 , the active layer 930 may have a polarization in the first direction. For example, both the first area A1 and the second area A2 may have the same polarization in the first direction. In such a state, current may not flow between the first electrode 910 and the second electrode 920 by the active layer 930 .

However, when a first voltage greater than the coercive voltage at which the charge of the hysteresis loop of the active layer 930 becomes zero to the first electrode 910 and the second electrode 920 is applied, as shown in FIG. Similarly, the polarization direction of the first region A1 is changed by the first electric field generated between the first electrode 910 and the second electrode 920 , and the active layer 930 is formed between the first region A1 and the second electrode 920 . It may be partitioned into an area A2.

At this time, since the magnitude of the voltage for changing the polarization direction of the domain of the active layer 930 increases in proportion to the thickness of the active layer 930 , in the second area A2 thicker than the first area A1 , The polarization direction of the active layer 930 is not changed. That is, as a first voltage greater than the coercive voltage of the active layer 930 is applied to the first electrode 910 and the second electrode 920 , polarization in a second direction different from the first direction only in the first region A1 . can have For example, the first direction and the second direction may be opposite to each other.

On the other hand, when the polarization directions in the first area A1 and the second area A2 are opposite to each other, the unit lattice structure of the active layer 930 is localized at the boundary between the first area A1 and the second area A2. is changed to , electrical polarization different from that of the first region A1 and the second region A2 is generated, whereby free electrons are accumulated at the boundary between the first region A1 and the second region A2 and the current is A variable low-resistance region C that can flow can be created.

The variable low resistance region C as described above is formed at the boundary between the first region A1 and the second region A2, and the first region A1 is changed by the area of the first surface S1. , a position at which the variable low resistance region C is generated may also be adjusted by the area of the first surface S1 .

On the other hand, when a second voltage for returning the polarization direction of the first region A1 is applied to the first electrode 910 and the second electrode 920 , a gap between the first electrode 910 and the second electrode 920 is applied. Due to the generated second electric field, the first region A1 may have the polarization in the first direction again. The second voltage may be greater than a coercive voltage of the active layer 930 and may have a polarity opposite to that of the first voltage. Accordingly, the difference in polarization between the first area A1 and the second area A2 may be eliminated.

When the difference in polarization between the first area A1 and the second area A2 is eliminated, the variation low resistance area C between the first area A1 and the second area A2 disappears. Such a state is the same as the state shown in FIG. 28 . That is, since the first electrode 910 and the second electrode 920 are insulated by the active layer 930 , even when a voltage is applied between the first electrode 910 and the second electrode 920 , the first electrode No current flows between the 910 and the second electrode 920 .

Accordingly, it is possible to control the current flow of the electronic device 900 by controlling the voltage applied to the first electrode 910 and the second electrode 920 , and through the control of the current flow, the electronic device 900 . can be used for various purposes.

30 is a schematic enlarged view enlarged to explain K of FIG. 29 .

Referring to FIG. 30 , the active layer 930 has a layered structure, and may include a plurality of unit layered structures as an optional embodiment, for example, a first unit layered structure 930ab1 and a second unit layered structure 930ab2 . , a third unit layered structure 930ab3 and a fourth unit layered structure 930ab4 may be included.

Although not shown, the active layer 930 may include various number of unit layered structures in addition to the above four.

The first unit layered structure 930ab1 may include a first component layer 930a1 and a second component layer 930b1 .

The first component layer 930a1 and the second component layer 930b1 may have different crystal structures. Through this, electrical characteristics of the first component layer 930a1 and the second component layer 930b1 may be different, for example, the electrical resistance of the first component layer 930a1 may be higher than that of the second component layer 930b1. there is.

As an optional embodiment, the first component layer 930a1 may include a Bi-based oxide, for example, a Bi2O2 layer. Also, the second component layer 930b1 may include an octahedral structure.

Each of the second unit layered structure 930ab2, the third unit layered structure 930ab3, and the fourth unit layered structure 930ab4 has a first component layer 930a2, 210a3, 210a4 and a second component layer 930b2, 210b3, 210b4), each of which may be the same as the first component layer 930a1 and the second component layer 930b1 of the first unit layered structure 930ab1.

As an optional embodiment, the active layer 930 may be easily formed using perovskite having a layered structure, and may include, for example, SrBi2Ta2O9, Bi4Ti3O12, or Bi2WO6.

As described above, a flow of current may be generated through the generation of the variable low resistance region C in the active layer 930 , for example, an on current may flow.

In addition, when the variable low-resistance region C disappears through the control of the applied electrode, an off state is obtained. For example, the on/off ratio can be increased.

The value of the off current may be reduced through the high resistance of the first component layer 930a1 of the present embodiment.

In addition, the second component layer ( The efficiency of the electronic device may be improved by reducing or blocking the flow of abnormal current to 930b1).

In addition, the active layer 930 may include a second unit layered structure 930ab2, a third unit layered structure 930ab3, and a fourth unit layered structure 930ab4 under the first unit layered structure 930ab1, Accordingly, it is possible to effectively reduce or block an off current when the variable low resistance region C disappears, thereby improving precise control characteristics of the electronic device.

Using the above features, the electronic device 900 of the present embodiment can be used as a non-volatile memory. More specifically, as shown in FIG. 32 , the polarization direction of the first region A1 is determined by applying a first voltage greater than a coercive voltage to the first electrode 930 and the second electrode 920 . After the change, even if no voltage is applied to the first electrode 910 and the second electrode 920 , the polarization direction of the first region A1 remains unchanged. This can be understood as input.

On the other hand, if the read voltage is applied between the first electrode 910 and the second electrode 920 because the variable low resistance region C is formed when the polarization direction of the first region A1 is changed, the current easily flows flow, whereby the logical value '1' can be read. In this case, in order to prevent the polarization of the first region A1 from being affected by the read voltage, the read voltage may be less than a coercive voltage of the active layer 930 .

In addition, when a second voltage is applied to the first electrode 910 and the second electrode 920 to return the polarization direction of the first region A1 , the polarization of the first region A1 and the second region A2 is applied. The directions are the same, and such a state can be regarded as a logic value '0' is input.

In addition, when the polarization directions of the first region A1 and the second region A2 are the same, the variable low-resistance region C between the first region A1 and the second region A2 disappears. Accordingly, even when a voltage is applied between the first electrode 910 and the second electrode 920 , a current does not flow between the first electrode 910 and the second electrode 920 , and thereby a logic value of '0' can read

That is, when the electronic device 900 according to the present invention is used as a memory, the polarization state of the first region A1 is selectively changed by applying a voltage to the first electrode 910 and the second electrode 920 . , it is possible to read the logic values '1' and '0' by measuring the current flowing in the fluctuating low-resistance region (C) that is generated or destroyed accordingly. can be improved.

The first electrode 910 and the second electrode 920 may be formed to overlap the active layer 930 and to be spaced apart from each other.

The first electrode 910 and the second electrode 920 may be formed to overlap the variable low resistance region C in at least one region. For example, the first electrode 910 and the second electrode 920 may be formed to be in contact with the variable low resistance region C. Referring to FIG.

Also, according to the present embodiment, the low-variation resistance region C generated according to the application of the electric field may be formed only in a predetermined region. Therefore, the variable low-resistance region (C) is formed only at a limited location without causing an increase or expansion of the domain region in which the polarization state is changed in proportion to the application time of the electric field. There are advantages that do not need to be considered.

In addition, in a state in which the first electrode 910 and the second electrode 920 are stacked, the variable low resistance region C is formed as the shortest distance connecting the first electrode 910 and the second electrode 920 . , the size of the device may be reduced to enable integration. In addition, since the magnitude of the current flowing when the logic values '1' and '0' are read is different, readability of data may be improved.

In addition, the electronic device 900 according to the present invention may constitute a circuit unit that generates and transmits various signals, and may also be used as a switching device. For example, the ON/OFF of the current flow can be controlled by the generation and disappearance of the fluctuating low-resistance region (C). In addition, since the electronic device 900 according to the present invention can be applied with a simple structure to a portion requiring control of an electrical signal, it can be applied to various fields such as a variable circuit, a CPU, and a biochip.

As another example, the electronic device 900 according to the present invention may be used in a capacitor capable of forming various current path control regions. For example, if the distance between the first electrode 910 and the second electrode 920 facing each other is formed in various ways, it varies depending on the magnitude of the electric field applied to the first electrode 910 and the second electrode 920 . A position at which the low resistance region C is formed may be variously adjusted, and thereby, various current path control regions may be formed in the storage battery.

In this case, the active layer may be doped with a transition metal, and the value of the energy bandgap of the active layer may be increased or decreased.

Through this, an efficient electronic device structure can be easily realized by reducing the resistance of the electronic device, and, conversely, an optimal electronic device having a desired resistance value can be easily designed by increasing the specific resistance.

31 to 33 are cross-sectional views schematically illustrating another example of the electronic device of FIGS. 28 and 29 , respectively.

First, referring to FIG. 31 , the electronic device 900B includes a first electrode 910 , a second electrode 920 facing the first electrode 910 , and a first electrode 910 and a second electrode 920 . An active layer 930 interposed therebetween may be included.

At least one of the first electrode 910 and the second electrode 920 may include a first surface S1 closest to the active layer 930 and a second surface S2 most distant from the active layer 930. can In this case, the size of the horizontal cross-sectional area on the first surface S1 may be smaller than the size of the horizontal cross-sectional area on the second surface S2.

For example, as shown in FIG. 31 , the first electrode 910 may include a protrusion 932 protruding toward the second electrode 920 . Also, at least a portion of the protrusion 932 may have a tapered shape. The tapered shape may include the first surface S1 . For example, the protrusion 932 may have a cone shape. However, the shape of the horizontal cross-section of the protrusion 932 is not limited to a circular shape, and may be various such as a triangle, a square, or a polygon.

As such, when the protrusion 932 has a tapered shape including the first surface S1 , a voltage for changing the polarization of the first region A1 is applied between the first electrode 910 and the second electrode 920 . In this case, since the electric field may be concentrated between the first surface S1 and the second electrode 920 , the polarization of the first region A1 may be changed more quickly and effectively.

The first electrode 910 and the second electrode 920 may be formed to overlap the active layer 930 and to be spaced apart from each other.

The first electrode 910 and the second electrode 920 may be formed to overlap the variable low resistance region C in at least one region. For example, the first electrode 910 and the second electrode 920 may be formed to be in contact with the variable low resistance region C. Referring to FIG.

Although not shown, the description of the structure of the active layer of FIGS. 16 to 18 can be selectively applied to the present embodiment.

In addition, the structure of FIG. 30 described above may be applied.

FIG. 32 illustrates an electronic device 900C having a structure in which the first electrode 910 has a tapered shape similar to that of FIG. 31 . However, FIG. 32 illustrates an example in which the first electrode 910 has an overall tapered shape.

Also, FIG. 33 shows an example in which both the first electrode 910 and the second electrode 920 have a tapered shape. Specifically, the first electrode 910 and the second electrode 920 of the electronic device 900D of FIG. 33 each include a first surface S1 and a second surface S2, and the first electrode 910 includes a first surface S1 and a second surface S2, respectively. A first area A1 of the active layer 930 may be partitioned between the first surface S1 of the second electrode 920 and the first surface S1 of the second electrode 920 . In this case, it is preferable that the areas of the first surface S1 of the first electrode 910 and the first surface S1 of the second electrode 920 facing each other are the same for effective electric field induction.

34 to 39 are cross-sectional views schematically illustrating another example of the electronic device of FIGS. 28 and 29, respectively.

34 to 39 show the shape of the protrusion 912 of the first electrode 910, as described above, in the present invention, the first electrode (910 in FIG. 28) and/or the second electrode (in FIG. 28) Since the 920 may have a tapered shape as a whole, and the protrusion 912 may be integrally formed with the first electrode ( 910 in FIG. 28 ) and/or the second electrode ( 920 in FIG. 28 ), hereafter, the protrusion 912 . ) may be understood as a part of the first electrode 910 and/or the second electrode 920 .

34 is a cross-sectional view schematically illustrating an example of a cross-section II′ of the electronic device of FIG. 28 .

34 illustrates an example in which both the protrusion 912 and the active layer 930 of the electronic device 900E have a circular cross section.

35 is a cross-sectional view schematically illustrating another example of a cross-section II′ of the electronic device of FIG. 28 .

In FIG. 35 , the protrusion 912 of the electronic device 900F may have a rectangular cross-section, and the active layer 930 may have a circular-like cross-section.

FIG. 36 is a cross-sectional view schematically illustrating another example of a cross-section II′ of the electronic device of FIG. 28 .

36 illustrates an example in which both the protrusion 912 and the active layer 930 of the electronic device 900G have a rectangular cross section. That is, the protrusion 912 and the active layer 930 are not limited to the above shapes, but may have various shapes.

FIG. 37 is a cross-sectional view schematically illustrating another example of a cross-section II′ of the electronic device of FIG. 28 .

37 shows an electronic device 900H including a first protrusion 912a and a second protrusion 912b. The first protrusion 912a and the second protrusion 912b may be spaced apart from each other, and different voltages may be applied thereto. For example, when the second electrode ( 920 in FIG. 28 ) is integrally formed, two low-variable resistance regions (C in FIG. 28 ) may be formed. Therefore, when the electronic device 900H is used as a memory, a logic value '0', '1', '2', '3' can be written and read.

38 is a cross-sectional view schematically illustrating another example of a cross-section II′ of the electronic device of FIG. 28 .

38 illustrates an electronic device 900I including a first protrusion 912a, a second protrusion 912b, a third protrusion 912c, and a fourth protrusion 912d. The first protrusion 912a to the fourth protrusion 912d may be electrically separated from each other. Also, the second electrode ( 920 of FIG. 30 ) facing the first protrusion 912a , the second protrusion 912b , the third protrusion 912c , and the fourth protrusion 912d may be separated. Accordingly, when the electronic device 900H is used as a memory, the amount of processing data of the electronic device 900H may increase.

FIG. 39 is a cross-sectional view schematically illustrating another example of a cross-section II′ of the electronic device of FIG. 28 .

39 shows an example in which the protrusion 912 of the electronic device 900J extends in one direction.

As described above, each electronic device has a different current value in each case and can store various information accordingly. In addition, it is possible to easily control the current according to the control of the electrical characteristics of the first electrode and the second electrode.

As such, the present invention has been described with reference to the embodiments shown in the drawings, which are merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. . Accordingly, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

The specific implementations described in the embodiment are only embodiments, and do not limit the scope of the embodiment in any way. In addition, unless there is a specific reference such as "essential", "importantly", etc., it may not be a necessary component for the application of the present invention.

In the specification of embodiments (especially in the claims), the use of the term “the” and similar referential terms may be used in both the singular and the plural. In addition, when a range is described in the embodiment, it includes the invention to which individual values belonging to the range are applied (unless there is a description to the contrary), and each individual value constituting the range is described in the detailed description. . Finally, the steps may be performed in an appropriate order unless the order is explicitly stated or there is no description to the contrary with respect to the steps constituting the method according to the embodiment. Embodiments are not necessarily limited according to the order of description of the above steps. The use of all examples or exemplary terms (eg, etc.) in the embodiment is merely for describing the embodiment in detail, and unless it is limited by the claims, the scope of the embodiment is limited by the examples or exemplary terminology. it is not In addition, those skilled in the art will appreciate that various modifications, combinations, and changes may be made in accordance with design conditions and factors within the scope of the appended claims or their equivalents.

100, 200, 300: electronic device
110, 210, 310: active layer
120, 220, 320: applied electrode
VL, VL1, VL2, C: Fluctuation low resistance region

Claims (2)

an active layer comprising a spontaneously polarizable material and comprising a layered structure;
an applying electrode disposed adjacent to the active layer;
a polarization region that can be formed in the active layer by applying an electric field to the active layer through the applying electrode; and
at least one variable low resistance region corresponding to the boundary of the polarization region and including a region having a lower electrical resistance than other adjacent regions; including,
the active layer comprises a first component layer and a second component layer adjacent to the first component layer and having different electrical properties from the first component layer;
and the polarization region is formed to extend from the first component layer to the second component layer. For a fluctuating low-resistance region-based electronic device comprising an active layer comprising a spontaneously polarizable material and comprising a layered structure, and an applying electrode disposed adjacent to the active layer, the electronic device comprising:
forming a polarization region of the active layer by applying an electric field to the active layer through the applying electrode; and
forming a variable low-resistance region including a region having a lower electrical resistance than other adjacent regions corresponding to the boundary of the polarization region;
the active layer comprises a first component layer and a second component layer adjacent to the first component layer and having different electrical properties from the first component layer;
and the polarization region is formed to extend from the first component layer to the second component layer.

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