KR20210035749A - Display device and method of fabricating the same - Google Patents

Abstract

An organic light emitting diode display includes an integrated circuit, a first electrode, a spacer, an organic material stack layer and a second electrode. The first electrode is electrically connected to the integrated circuit and has an upper surface, a lower surface, and a sloped surface connecting the upper surface and the lower surface. The angle between the sloped surface and the lower surface is in the range of about 45 degrees to about 80 degrees. The spacer is disposed to cover the sloped surface of the first electrode. The organic material stack layer is disposed on the first electrode. The second electrode is disposed over the organic material stack layer and the spacer. It is possible to prevent the breakage of the second electrode at the corner.

Description

Display device and its manufacturing method {DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME}

Priority claim and cross-reference

This application claims priority to China Application No. 201910899516.7, filed September 23, 2019, which is incorporated herein by reference.

With the advancement of technology applied to virtual reality (VR) and augmented reality (AR), head gear devices have become popular. However, improvements can be made to current manufacturing yields applied to scaled down headgear devices.

The organic light emitting diode display includes an integrated circuit, a first electrode, a spacer, an organic material stack layer and a second electrode. The first electrode is electrically connected to the integrated circuit and has an upper surface, a lower surface, and an inclined surface connecting the upper surface and the lower surface. The angle between the inclined surface and the lower surface is in the range of about 45 degrees to about 80 degrees. The spacer is disposed to cover the inclined surface of the first electrode. The organic material stack layer is disposed on the first electrode. The second electrode is disposed on the organic material stack layer and the spacer.

Aspects of the present disclosure are best understood when viewed in conjunction with the accompanying drawings from the following detailed description. It should be noted that, according to standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may have been arbitrarily increased or decreased to clarify the description.
1 shows a cross-sectional view of an organic light emitting diode display device according to some embodiments of the present disclosure.
2 and 3 respectively show cross-sectional views of an organic light emitting diode display device according to some embodiments of the present disclosure.
4A to 4C are top views, respectively, of a first electrode of an organic light emitting diode unit according to some embodiments of the present disclosure.
5A-5J each show a cross-sectional view of an organic light emitting diode display device at different manufacturing steps of a manufacturing method according to some embodiments of the present disclosure.
6 is an enlarged view of the region R of FIG. 5I.
7 and 8 respectively show cross-sectional views of an organic light emitting diode display device according to another embodiment of the present disclosure.
9 shows a schematic diagram of an exterior of a headgear device according to some embodiments of the present disclosure.
10 and 11 respectively show cross-sectional views of a liquid crystal on silicon (LCOS) display panel at different manufacturing steps according to some embodiments of the present disclosure.
12 shows a block diagram of a projection device in a head gear device according to some embodiments of the present disclosure.

The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and configurations are described below to simplify the present disclosure. These are, of course, only examples and not intended to be limiting. For example, in the following description, forming a first feature on or over a second feature may include embodiments in which the first and second features are formed in direct contact, and the first and second features Embodiments may also be included in which additional features may be formed between the first and second features so that the features do not come into direct contact. In addition, the present disclosure may repeat reference numbers and/or letters in various examples. This repetition is for the purpose of simplicity and clarity, and does not in itself dictate the relationship between the various embodiments and/or configurations described.

In addition, spatially relative terms such as “below”, “below”, “lower”, “above”, “upper”, and the like refer to one component or another component(s) of a feature or It may be used herein for ease of explanation to describe the relationship to the feature(s). Spatially relative terms are intended to encompass different orientations of a device in use or in operation in addition to the orientation shown in the figures. The device can be otherwise oriented (rotated 90 degrees or in a different orientation), and the spatially relative descriptors used herein can likewise be interpreted accordingly.

1 shows a cross-sectional view of an organic light emitting diode display device according to some embodiments of the present disclosure. The organic light emitting diode display device 100 includes an integrated circuit 110, an insulating layer 120 disposed on the integrated circuit 110, and a plurality of organic light emitting units 140 disposed on the insulating layer 120 (substrate In order to facilitate this, only one drawing is included). Each of the organic light emitting diode units 140 is electrically connected to the integrated circuit 110 below it through a respective via plug 122 in the insulating layer 120. In some embodiments of the present disclosure, the integrated circuit 110 and the insulating layer 120 thereon serve as a base for placing the organic light emitting diode unit 140.

In some embodiments of the present disclosure, both the organic light emitting diode unit 140 and the integrated circuit 110 are manufactured by a semiconductor process for scaling down the organic light emitting diode display device. In another embodiment, the organic light emitting diode display device 100 may be further attached to another carrier panel. In some embodiments of the present disclosure, the organic light emitting diode unit 140 is a micro organic light emitting diode.

The organic light emitting diode unit 140 includes a first electrode 142, a blocking layer 144 and 146, a spacer layer 148, an organic material stack layer 150, and a second electrode 152. . The first electrode 142 is disposed on the insulating layer 120, and the second electrode 152 is disposed opposite the first electrode 142. The organic material stack layer 150 is disposed between the first electrode 142 and the second electrode 152. The first electrode 142 may act as an anode of the organic light emitting diode unit 140, and the second electrode 152 may act as a cathode of the organic light emitting diode unit 140. The organic light emitting diode unit 140 emits light through a cathode. Accordingly, the second electrode 152 may serve as a light emitting side of the organic light emitting diode unit 140.

The two opposing surfaces of the first electrode 142 are arranged with blocking layers 144 and 146, respectively. That is, the blocking layer 144 is disposed between the first electrode 142 and the insulating layer 120, and the blocking layer 146 is disposed on the surface of the first electrode 142 opposite the blocking layer 144. . The blocking layer 144 acts to block the material of the first electrode 142 from the insulating layer 120, such as blocking diffusion of the material from the first electrode 142 into the insulating layer 120 . The blocking layer 146 prevents the material of the first electrode 142 from directly contacting the organic material stack layer 150 on the first electrode 142 to cause an unexpected reaction. It acts to block the material of the first electrode 142 from the organic material stack layer 150 above. In some embodiments of the present disclosure, the material of the blocking layers 144 and 146 is a metal nitride such as titanium nitride (TiN) or other similar material.

In some embodiments of the present disclosure, the spacer layer 148 is on the outer surface of the first electrode 142 and of the insulating layer 120, such as covering the outermost sidewall of the first electrode 142. It is placed on the upper surface. The spacer layer 148 separates the first electrodes 142 of the neighboring organic light emitting diode units 140 from each other, and a first electrode such as a sidewall of the first electrode 142 exposed from the blocking layers 144 and 146 The sidewall of 142 is prevented from directly contacting the organic material stack layer 150.

The organic material stack layer 150 is deposited on the first electrode 142. In some embodiments of the present disclosure, the spacer layer 148 has an opening region O1, and the organic material stack layer 150 is filled in the opening region O1. In some embodiments of the present disclosure, the organic material stack layer 150 of the neighboring organic light emitting diode unit 140 may be composed of different organic light emitting layers to emit light of different colors. The organic material stack layer 150 of the neighboring organic light emitting diode unit 140 is attached to the spacer layer 148 to prevent the organic material stack layers 150 of different organic light emitting diode units 140 from directly contacting each other. Can be separated by The second electrode 152 is a shared electrode and extends continuously on the upper surface of the spacer layer 148 and the organic material stack layer 150.

In some embodiments of the present disclosure, the second electrode 152 is conformally disposed on the organic material stack layer 150 and the spacer layer 148. That is, the thickness of the second electrode 152 is generally uniform. Considering that the spacer layer 148 extends from the upper surface of the insulating layer 120 to the upper surface of the blocking layer 146 along the sidewall of the first electrode 142, the upper surface of the spacer layer 148 accordingly The highest and lowest positions of have a vertical offset G1 therebetween. In order to maintain the translucency of the second electrode 152, the thickness of the second electrode 152 is usually very thin, and thus the second electrode 152 is damaged due to an excessively large offset G1. easy. Some embodiments of the present disclosure reduce the vertical offset (G1) between the highest and lowest positions of the upper surface of the spacer 148, whereby the second electrode 152 is damaged due to an excessively large offset (G1). Prevent it from becoming.

In some embodiments of the present disclosure, the cross section of the first electrode 142 is not rectangular but wider at the bottom than at the top, eg, wider at the bottom and a narrow trapezoid at the top. In other words, the upper surface 142t of the first electrode 142 is substantially parallel to the lower surface 142b of the first electrode 142, and the area of the upper surface 142t of the first electrode 142 is zero. 1 is smaller than the area of the lower surface 142b of the electrode 142, and the upper surface 142t of the first electrode 142 and the lower surface 142b of the first electrode 142 have a sloped surface therebetween ( 142s), and the inclined surface 142s of the first electrode 142 is not covered by the blocking layer. An angle θ is included between the lower surface 142b of the first electrode 142 and the inclined surface 142s of the first electrode 142.

2 and 3 respectively show cross-sectional views of an organic light emitting diode display device according to some embodiments of the present disclosure. In some embodiments of the present disclosure, the inclined surface 142s of the first electrode is not necessarily flat, and may be a curved concave surface as shown in FIG. 2 or a curved convex surface as shown in FIG. 3.

4A to 4C are top views, respectively, of a first electrode of an organic light emitting diode unit according to some embodiments of the present disclosure. In some embodiments of the present disclosure, the shape viewed from above of the first electrode 142 may be a rectangle as shown in FIG. 4A, a circular shape as shown in FIG. 4B, a hexagonal shape as shown in FIG. 4C, or another It may be of any suitable shape.

Referring back to FIG. 1, in some embodiments of the present disclosure, in each of the organic light emitting diode units 140, the first electrode 142 has an inclined surface 142s, and the top of the first electrode 142 The area of the surface 142t is smaller than the area of the lower surface 142b of the first electrode, so that the inclined surface 142s of the first electrode 142 and the lower surface 142b of the first electrode are interposed therebetween. It has an angle θ sandwiched between.

In some embodiments of the present disclosure, the angle θ sandwiched between the inclined surface 142s of the first electrode 142 and the lower surface 142b of the first electrode 142 is in a range between about 45 degrees and about 80 degrees. . If the included angle θ is greater than about 80 degrees, the vertical offset G1 cannot be effectively reduced, and also results in a high turning angle of the spacer layer 148. For example, the spacer layer 148 includes a first section 1482, a second section 1484 and a third section 1486 that are sequentially connected. The first section 1482 of the spacer layer 148 is disposed on the insulating layer 120 and extends substantially along the top surface of the insulating layer 120. The third section 1486 of the spacer layer 148 covers a portion of the blocking layer 146 and extends substantially along the top surface of the blocking layer 146. The second section 1484 of the spacer layer 148 extends substantially along the sloped surface 142s of the first electrode 142, and the first section 1482 of the spacer layer 148 and the spacer layer 148 ) To the third section 1486. The vertical offset G1 between the highest and lowest positions of the upper surface of the spacer layer 148 is the upper surface of the first section 1482 of the spacer layer 148 and the third section 1486 of the spacer layer 148 Is the vertical distance between the upper surfaces of.

If the included angle between the inclined surface 142s of the first electrode 142 and the lower surface 142b of the first electrode is greater than about 80 degrees, the first section 1482 of the spacer layer 148 and the spacer The rotation angle between the second section 1484 of the layer 148, or the rotation angle between the second section 1484 of the spacer layer 148 and the third section 1486 of the spacer layer 148 may be too high. And results in an almost vertical rotation angle. Considering that the second electrode 152 is conformally manufactured on the spacer layer 148 and the thickness of the second electrode 152 is very thin, the second electrode 152 is therefore positioned at a high rotation angle. Fragile On the other hand, if the angle between the inclined surface 142s of the first electrode 142 and the lower surface 142b of the first electrode 142 is less than about 45 degrees, the second section of the spacer layer 148 The length of 1484 is correspondingly increased, so that the distance between the organic light emitting diode units 140 is too long to reduce the resolution of the OLED display, or the light emitting area of the organic light emitting diode unit 140 is reduced.

In addition, when the angle θ sandwiched between the inclined surface 142s of the first electrode 142 and the lower surface 142b of the first electrode 142 is greater than about 80 degrees, the cross-sectional shape of the first electrode is rectangular. It can be close to. If the thickness of the spacer layer 148 is not sufficient, the step coverage of the spacer layer 148 on the first electrode 142 may be poor, and the second section 1484 of the spacer layer 148 and This may result in delamination at the corners of the spacer layer 148, such as at the corners between the third sections 1486, so that the organic material stack layer 150, which is subsequently produced, is brought to the delamination position of the spacer layer 148. It may flow in and then come into contact with the first electrode 142, which may lead to an unexpected reaction.

In addition, when the angle θ sandwiched between the inclined surface 142s of the first electrode 142 and the lower surface 142b of the first electrode 142 is about 80 degrees, the spacer layer 148 becomes the first electrode 142 If it is necessary to sufficiently cover the inclined surface 142s of ), the thickness of the spacer layer 148 must be increased. The spacer layer 148 having an increased thickness increases the vertical offset G2 between the top surface of the top surface of the spacer layer 148 and the top surface of the organic material stack layer 150, thereby increasing the second electrode 152. During the subsequent manufacture of ), the second electrode 152 is prone to breakage due to an excessively high offset G2, resulting in a decrease in yield.

Accordingly, the embodiment of the present disclosure design the first electrode 142 having an inclined surface 142s, and between the inclined surface 142s of the first electrode and the lower surface 142b of the first electrode 142 The angle θ sandwiched between is in the range of about 45 degrees to about 80 degrees. Thereby, the spacer layer 148 has a smoother topography and better step coverage on the first electrode 142.

Thereby, some embodiments of the present disclosure provide an organic light emitting diode display device, wherein the first section 1482 and the spacer layer 148 of the spacer layer 148 are modified by modifying the sidewalls of the first electrode to be inclined surfaces. The second electrode at the corner provides a smoother corner between the second section 1484 of the spacer layer 148 or between the second section 1484 of the spacer layer 148 and the third section 1486 of the spacer layer 148 Can further reduce the chance of breakage of (152); By using a thinner thickness of the spacer layer 148, it is possible to effectively cover the first electrode 142 including the inclined surface 142s and a portion of the upper surface of the blocking layer 146, and the organic light emitting diode Can help to reduce the overall height of unit 140; Reduce the vertical offset (G1) between the highest and lowest positions of the upper surface of the spacer layer 148, and the vertical between the highest and lowest positions of the upper surface of the spacer layer 148 and the upper surface of the organic material stack layer 150 The offset distance may be reduced, and a chance of disconnection of the second electrode 152 due to excessively high offset distances G1 and G2 may be further reduced.

5A-5J each show cross-sectional views of an organic light emitting diode display device at different manufacturing steps of a manufacturing method according to some embodiments of the present disclosure.

As shown in Fig. 5A, in step S10, the integrated circuit 110 is manufactured, and the integrated circuit 110 is manufactured using a semiconductor manufacturing process. Integrated circuit 110 includes control circuits, power circuits, switch devices and associated integrated circuits.

Then, as shown in FIG. 5B, in step S20, an insulating layer 120 and a via plug 122 are formed over the integrated circuit 110. In some embodiments of the present disclosure, forming the insulating layer 120 and the via plug 122 may include depositing the insulating layer 120. The insulating layer 120 may be, for example, an inter-metal dielectric (IMD) having a low dielectric constant (k value) such as a dielectric constant less than about 3.5. The insulating layer 120 may comprise a dielectric material such as silicon oxide or other suitable material.

Then, an opening is formed in the insulating layer 120. The opening can be formed, for example, by forming a patterned photoresist layer (not shown in the figure) on the insulating layer 120 and then performing an etching process to remove a portion of the insulating layer 120. have. In this way, the patterned photoresist layer acts as an etching mask to define the resulting opening in the insulating layer. The etching process may include one or more suitable etching processes. After etching, the patterned photoresist layer is removed.

Then, a conductive material is deposited to fill the opening, so that the conductive material covers the insulating layer 120 and is planarized such as a chemical mechanical polishing process to remove excess portion of the conductive material on the upper surface of the insulating layer 120. The process is performed, so that the via plug 122 is in the insulating layer 122. The material of via plug 122 may include copper or a copper alloy, or other suitable conductive material such as silver, gold, tungsten, aluminum, or other suitable material. In some embodiments of the present disclosure, the via plug 122 may further include a barrier layer 124 arranged between the conductive material and the insulating layer 120.

Then, as shown in FIG. 5C, in step S30, a blocking layer 144', an electrode layer 142', and another blocking layer 146' are sequentially deposited on the insulating layer 120. . In some embodiments of the present disclosure, the material of the blocking layer 144' is a metal nitride such as titanium nitride or other suitable material. The blocking layer 144' acts to separate the material of the electrode layer 142' from the insulating layer 120 so as to prevent diffusion of the material of the electrode layer 142' into the insulating layer 120. In some embodiments of the present disclosure, the thickness of the blocking layer 144' is between about 50 Å and about 150 Å. If the thickness of the blocking layer 144 ′ is greater than about 150 Å, then the excessively large thickness is the vertical offset G1 between the highest and lowest positions of the top surface of the spacer layer 148 (see FIG. 1) (FIG. 1 Reference). If the thickness of the blocking layer 144 ′ is less than about 50 Å, the material of the electrode layer 142 ′ may undesirably diffuse into the insulating layer 120.

In some embodiments of the present disclosure, the material of the electrode layer 142 ′ is a metal or a metal alloy, so that light emitted by the organic light emitting diode unit can be reflected by the electrode layer 142 ′ toward the light emission direction. . In order to reduce the thickness of the electrode layer 142 ′, the material of the electrode layer 142 ′ may be used, such as an aluminum copper alloy (AlCu) or other suitable material, to avoid excessively increasing the resistance when reducing the thickness. It may be a conductive material with low resistance. In other embodiments, the material of electrode layer 142' may include indium tin oxide, gold, tungsten, titanium, or other suitable material.

In some embodiments of the present disclosure, by adjusting the process conditions of the deposition process, it is possible to reduce the thickness of the electrode layer 142 ′ while maintaining the surface flatness and reflectance of the electrode layer 142 ′, Accordingly, it is possible to increase the brightness and contrast of the organic light emitting diode display device. For example, the electrode layer 142 ′ may be manufactured through physical vapor deposition (PVD), and the power and temperature of the physical vapor deposition further lower the deposition rate of the electrode layer 142 ′. Can be adjusted, so that the deposited electrode layer 142' can have a desired surface flatness and thereby maintain the reflectivity of the electrode layer 142'. In some embodiments of the present disclosure, the power is between about 1500W and about 3150W. If the power is greater than about 3150W, the deposition rate may be excessively high and thus the electrode layer 142' may have an uneven surface. In some embodiments, the power may be less than about 2500W to achieve the desired surface flatness. If the power is lower than about 1500W, the deposition cannot be properly performed.

In some embodiments of the present disclosure, the deposition rate is from about 30 Å per second to about 200 Å per second. If the deposition rate is greater than about 200 Å per second, it may result in an uneven surface of the electrode layer 142' due to an excessively high deposition rate. If the deposition rate is less than 50 Å per second, the wafer per hour (WPH) may be too low.

In some embodiments of the present disclosure, the desired surface flatness of the electrode layer 142 ′ is the root mean square roughness (Rms) of the electrode layer 142 ′ is less than about 30 Å and the deepest of the electrode layer 142 ′. This means that the difference between the valley (Rv) and the highest peak (Rp) is less than about 300 Å. In some embodiments of the present disclosure, the thickness of the electrode layer 142' is between about 300 Å and about 900 Å. If the thickness of the electrode layer 142 ′ is greater than about 900 Å, the excessively large thickness is the vertical offset G1 between the highest and lowest positions of the upper surface of the spacer layer 148 (see FIG. 1) (FIG. 1). Reference), thereby increasing the chance of breakage of the second electrode 152 (see FIG. 1). If the thickness of the electrode layer 142 ′ is less than about 300 Å, the electrode layer 142 ′ may be sufficiently thin to be translucent, and thus the electrode layer 142 ′ may not be reflected toward the emission direction. It can affect its ability to reflect light.

In some embodiments of the present disclosure, the material of the blocking layer 146' is also a metal nitride such as titanium nitride or other suitable material. The thickness of the blocking layer 146' is about 30 Å to about 200 Å. If the thickness of the blocking layer 146 ′ is greater than about 200 Å, the surface of the blocking layer 146 ′ may be excessively rough, thus lowering the reflectivity of the blocking layer 146 ′. If the thickness of the blocking layer 146 ′ is less than about 30 Å, the excessively thin blocking layer 146 ′ may be damaged in a subsequent manufacturing process, and thus the desired value between the organic material stack layer and the electrode layer 142 ′. It may result in unintended contact.

Then, as shown in Fig. 5D, in step S40, the position of the first electrode is defined. Step S40 includes forming the patterned photoresist layer 160 to use the patterned photoresist layer 160 as a mask for defining the position of the first electrode 142. The location of the patterned photoresist layer 160 covers at least the via plug 122.

Then, referring to FIGS. 5D and 5E, in step S50, the electrode layer 142' and the blocking layers 144', 146' are etched by using the patterned photoresist layer 160 as an etching mask, As a result, the patterned first electrode 142 and patterned blocking layers 144 and 146 positioned above and below the first electrode 142 are formed. After etching, the patterned photoresist layer 160 is removed. As mentioned above, in some embodiments of the present disclosure, the first electrode 142 has an inclined surface 142s, and the inclined surface 142s of the first electrode 142 and the lower portion of the first electrode 142 The angle θ sandwiched between the surfaces 142b is in the range of about 45 degrees to about 80 degrees.

For example, in some embodiments of the present disclosure, the etching process used is dry etching, the pressure is about 4 mTorr to about 10 mTorr, the source radio frequency is about 600 W to about 1600 W, and the bias radio frequency is about 40 W to about 200 W, the etchant gas may _{include boron chloride (BCl 3} ), and the etchant gas flow rate is about 50 sccm (standard cubic centimeters per minute) to about 500 sccm. If the etching conditions are outside these ranges, the range of the included angle θ may be greater than about 80 degrees or less than about 45 degrees. If the included angle is greater than about 80 degrees, the second electrode 152 (see FIG. 1) may be damaged. If the included angle θ is less than about 45 degrees, the spacing between the organic light emitting diode units may be too long, which may in turn lead to a reduction in the light emitting area of the organic light emitting diode unit or a decrease in the resolution of the display.

After etching, the blocking layer 144 and the blocking layer 146 are disposed only on the upper and lower surfaces of the first electrode 142 and do not cover the inclined surface 142s of the first electrode 142. Considering that the cross-sectional shape of the first electrode 142 is narrow at the top and wide at the bottom, the area of the lower surface of the blocking layer 144 is larger than the area of the upper surface of the blocking layer 146. In some embodiments of the present disclosure, the total thickness of the first electrode 142, the blocking layer 144, and the blocking layer 146 may be less than about 1000 Å, for example, within a range of about 600 Å to about 800 Å. Can be controlled.

Then, as shown in Fig. 5F, in step S60, a dielectric layer 148' is covered on the first electrode 142, the blocking layers 144 and 146, and the insulating layer 120. The material of the dielectric layer 148 ′ may be the same as or different from the material of the insulating layer 120. For example, the material of dielectric layer 148' may be an oxide, nitride, oxynitride, or other suitable material, such as silicon oxide, silicon nitride, silicon oxynitride, or other suitable material.

Considering that the sidewall of the first electrode 142 is an inclined surface 142s, therefore, the dielectric layer 148' may completely cover the first electrode 142 and the blocking layers 144, 146 with a thinner thickness. , Has good step coverage without delamination at the corners. Further, taking into account that the total thickness of the first electrode 142, the blocking layer 144 and the blocking layer 146 may be less than about 1000 Å, thus the dielectric layer 148 ′ has a high rotation angle at the corner ( 80 degrees or more), the first electrode 142, the blocking layers 144 and 146, and the insulating layer 120 may be covered more smoothly.

For example, in some embodiments of the present disclosure, the thickness of the dielectric layer 148' is between about 100 Å and about 400 Å. If the thickness of the dielectric layer 148 ′ is less than 100 Å, the dielectric layer 148 ′ may not completely cover the first electrode 142, the blocking layers 144 and 146, and the insulating layer 120. If the thickness of the dielectric layer 148 ′ is greater than 400 Å, the excessively large thickness is the highest position of the top surface of the spacer layer 148 (see FIG. 1) formed subsequently and the organic material stack layer 150 formed subsequently. Increase the vertical offset distance G2 (see FIG. 1) between the upper surfaces of (see FIG. 1), and thereafter, when manufacturing the second electrode 152 (see FIG. 1), the second electrode 152 (See Fig. 1) is prone to breakage due to an excessively high vertical offset G2 (see Fig. 1), resulting in a decrease in yield.

Then, referring to FIG. 5G, in step S70, another patterned photoresist layer 162 is formed on the dielectric layer 148 to define an opening for forming the organic light emitting diode unit.

Thereafter, referring to FIGS. 5G and 5H, in step S80, the dielectric layer 148' is etched using the patterned photoresist layer 162 as an etching mask, resulting in the sidewall of the first electrode 142 It becomes a spacer layer 148 covering the. After etching, the patterned photoresist layer 162 is removed.

For example, portions of the dielectric layer 148' that are not covered by the patterned photoresist layer 162 are removed to define an opening portion O1, and the dielectric layer covered by the patterned photoresist layer 162. A portion of 148 ′ remains on the first electrode 142 and the insulating layer 120 to form the spacer layer 148. The opening region O1 extends through the spacer layer 148.

In some embodiments of the present disclosure, the thickness of the spacer layer 148 is between about 100 Å and about 400 Å. The ratio of the opening ratio of the first electrode 142, that is, the area of the upper surface of the blocking layer 146 exposed in the opening area O1 to the total area of the upper surface of the blocking layer 146, is about 98% or more. to be.

Considering that the blocking layer 146 acts as an etch stop layer during fabrication to etch the dielectric layer 148 ′, the portion of the blocking layer 146 that is not covered by the patterned photoresist layer 162 is etched. During the process may inevitably be partially removed, as a result of which the thickness t4 of a portion of the blocking layer 146 between the spacer layer 148 and the first electrode 142 is the exposed blocking layer in the opening area O1 It may be larger than the thickness t3 of the portion of 146. As mentioned above, the original thickness of the blocking layer 146, i.e. the thickness t4 or the thickness of the blocking layer 146 ′ deposited in FIG. 5D, is not covered by the patterned photoresist layer 162. It is larger than about 30 angstroms to prevent a portion of the layer 146 from being overly etched in the etching process of step S80 so that the first electrode 142 below it is exposed in the opening region O1.

Next, referring to FIGS. 5I and 6, as shown in FIG. 5I in step S90, the organic material stack layer 150 is formed in the opening area O1 over the first electrode 142. 6 is an enlarged view of the region R of FIG. 5I. In some embodiments of the present disclosure, the organic material stack layer 150 is a stack of multiple layers comprising different materials. For example, the organic material stack layer 150 may include a hole-injecting layer (HIL), an organic hole-transporting layer (HTL), an organic light-emitting layer (LEL), and electronic It may include a stack of an electron-transporting layer (ETL) and an electron-injecting layer (EIL). In another embodiment, the organic material stack layer 150 may optionally further include an electron blocking layer and a hole blocking layer.

In some embodiments of the present disclosure, the organic material stack layer 150 is formed on the blocking layer 146 and is filled in the opening area O1 defined by the spacer layer 148.

By selecting different materials for different organic light-emitting layers, different organic light-emitting diode units can emit different colors of light. In some embodiments of the present disclosure, a display device including a plurality of organic light emitting diode units includes an organic light emitting diode unit emitting red light, an organic light emitting diode unit emitting blue light, and an organic light emitting diode unit emitting green light. It may include.

In some embodiments of the present disclosure, the organic material stack layer 150 may be manufactured in the opening region O1 through evaporation. In some embodiments of the present disclosure, different colored organic material stack layers may be formed in the opening regions of different colored organic light emitting diode units through separate evaporation manufacturing. For example, an organic material stack layer emitting red light may be first manufactured in an opening area of an organic light emitting diode unit emitting red light, and then an organic material stack layer emitting green light may be used to emit green light. An organic material stack layer emitting blue light may be manufactured in the opening area of the organic light emitting diode unit, and finally, an organic material stack layer emitting blue light may be manufactured in the opening area of the organic light emitting diode unit emitting blue light. The organic material stack layers of different organic light emitting diode units may be spaced apart by a spacer layer 148.

The organic material stack layer 150 and the first electrode 142 are attached to the blocking layer 146 to prevent direct contact between the organic material stack layer 150 and the first electrode 142 from causing an unexpected reaction. Spaced by

Referring again to FIG. 5I, in some embodiments of the present disclosure, the thickness t5 of the organic material stack layer 150 may be smaller than the thickness t6 of the spacer layer 148, so that the organic material stack layer ( 150 does not completely fill the opening area O1. In other words, the height of the upper surface of the organic material stack layer 150 is lower than the height of the highest position of the upper surface of the spacer layer 148.

Next, referring to FIG. 5J, in step S100 the second electrode 152 is formed on the organic material stack layer 150. In some embodiments of the present disclosure, the second electrode 152 may be a shared electrode of the plurality of organic light emitting diode units 140. The second electrode 152 may be formed on the organic material stack layer 150 and the spacer layer 148 through evaporation. In some embodiments of the present disclosure, the material of the second electrode 152 is a metal such as silver. In another embodiment of the present disclosure, the material of the second electrode 152 may also be a transparent electrically conductive material such as indium tin oxide or other suitable material.

5J, the thickness t4 of the first portion 1462 of the blocking layer 146 between the spacer layer 148 and the first electrode 142 is the organic material stack layer 150 and the first It is greater than the thickness t3 of the second portion of the blocking layer 146 between the electrodes 142. The second electrode 152 is formed evenly on the top surface of the organic material stack layer 150 and the top surface of the spacer layer 148, and thus has an undulating top surface. Some embodiments of the present disclosure lower the difficulty of manufacturing the second electrode 152, and reduce the vertical offset distance G1 between the highest and lowest positions of the upper surface of the spacer layer 148, thereby reducing the second electrode 152 Effectively prevents unexpected breakage of ).

In addition, the shape of the first electrode is a trapezoid having an inclined corner, and the angle θ sandwiched between the inclined surface 142s of the first electrode and the lower surface 142b of the first electrode is within a range of about 45 degrees to 80 degrees. Considering that there is, the spacer layer 148 may have a smoother surface shape. Thus, the second electrode 152 arranged on the spacer layer 148 can also be avoided from rising at a large (ie, abrupt) angle, thereby reducing the risk of breakage.

7 and 8 respectively show cross-sectional views of an organic light emitting diode display device according to a different embodiment of the present disclosure. In some embodiments, such as the organic light emitting diode unit 140a shown in FIG. 7, the organic material stack layer 150a substantially completely fills the opening area O1a. That is, the upper surface of the organic material stack layer 150a is at a height substantially equal to the top position of the spacer layer 148a. In another embodiment, such as the organic light emitting diode unit 140b shown in FIG. 8, the thickness t5b of the organic material stack layer 150b may be greater than the thickness t6b of the spacer layer 148b, and thus the organic The material layer 150b completely fills the opening area O1b and protrudes from the spacer layer 148b, so that the upper surface of the organic material stack layer 150b is higher than the highest position of the upper surface of the spacer layer 148b.

In summary, some embodiments of the present disclosure can effectively reduce the thickness of the spacer layer by designing the sidewall of the first electrode as an inclined surface, so that the spacer layer has a smoother surface shape, whereby the second Reduces the risk of electrode breakage.

Next, FIG. 9 shows a schematic diagram of an exterior of a headgear device according to some embodiments of the present disclosure. The headgear device 200 includes a frame 210, a projection device 220 arranged on two sides of the frame 210, and an imaging screen 230 arranged on the front side of the frame 210. For example, the frame 210 has an ear hook portion 212 on two sides and a panel portion 214 on the front side. Panel portion 214 has at least one opening. The imaging screen 230 is embedded in the panel portion 214. The amount of the projection device 220 may be one or a plurality. When the amount of the projection device 220 is two, the two projection devices 220 are each arranged on the ear hook portion 212 to project onto the imaging screen 230.

In some embodiments of the present disclosure, the projection device 220 of the headgear device 200 includes the aforementioned organic light emitting diode display device (eg, the organic light emitting diode display device 100 shown in FIG. 1 ). The structure and fabrication of this organic light emitting diode display device is described in the above examples, and not further described here.

In some embodiments of the present disclosure, the projection device 220 may be controlled by a processor, and receives a signal from the processor and outputs a corresponding imaging light. In some embodiments of the present disclosure, one or more reflective or optical lenses may be arranged between the projection device 220 and the imaging screen 230 to adjust the optical path of the imaging light output by the projection device 220. In some embodiments of the present disclosure, the projection device 220 may further include a heat dissipation unit. The heat dissipation unit may be, for example, a heat sink, a heat dissipation film, or the like. The heat dissipation unit may be thermally coupled to the organic light emitting diode array to prevent heat from accumulating and causing damage to the projection device 220.

In some embodiments of the present disclosure, the headgear device 200 may be a transmissive headgear device, that is, the image viewed by the user may be a combination of an image provided by the projection device 220 and an image of an external environment. In some embodiments of the present disclosure, the headgear device 200 may be a reflective headgear device, ie the image the user sees is an image provided by the projection device 220.

10 and 11 respectively show cross-sectional views of a liquid crystal on silicon (LCOS) display panel at different manufacturing steps according to some embodiments of the present disclosure. 10 is an integrated circuit 310, an insulating layer 320 disposed on the integrated circuit 310, a plurality of first electrodes 330 disposed on the insulating layer 320 (for simplicity, only one drawing is shown. ), blocking layers 340 and 342 disposed on two sides of the first electrode 330, and a spacer layer 350 disposed on the sidewalls of the first electrode 330. . Each of the first electrodes 330 is electrically connected to the integrated circuit 310 below it through a via plug 322 disposed in the insulating layer 320.

The method for manufacturing the integrated circuit 310, the insulating layer 320, the via plug 322, the first electrode 330, the barriers 340 and 342, and the spacer layer 350 is illustrated in FIGS. 5A to 5H. Reference may be made to steps S10 to S80 described in, and no further repetition is made here.

Next, referring to FIG. 11, FIG. 11 shows an opposite substrate 360 and a liquid crystal layer 370. The second electrode 380 is disposed on the opposite substrate 360. The second electrode 380 is a shared electrode. In some embodiments of the present disclosure, the second electrode 380 covers the entire substrate of the counter substrate 360 facing the first electrode 330. The second electrode 380 is an electrically conductive material having a high translucency, such as indium oxide (In ₂ O ₃ ), tin oxide (SnO ₂ ), indium tin oxide (ITO), zinc oxide (ZnO) or other suitable material. I can.

In some embodiments of the present disclosure, the liquid crystal layer 370 may be formed on the spacer layer 350 and the first electrode 330 first, and then be matched to the counter substrate 360 to complete the fabrication. In this way, the LCOS display panel 300 can be obtained. In some embodiments of the present disclosure, the opposing substrate 360 may be first disposed over the integrated circuit 310 but leaving a space therebetween, and then the liquid crystal layer 370 is formed between the integrated circuit 310 and the opposing substrate 360. ) Is injected between. In some embodiments of the present disclosure, an alignment layer may be arranged between the liquid crystal layer 370 and the first electrode 330 and between the liquid crystal layer 370 and the second electrode 380.

By modifying the sidewall of the first electrode 330 to an inclined surface, the required thickness of the spacer layer 350 can be effectively reduced, and the spacer layer 350 will have good step coverage on the first electrode 330. And may have a smoother surface shape, thereby solving the problem of breakage or peeling of the spacer layer 350 at the corner.

12 shows a block diagram of a projection device in a headgear device according to some embodiments of the present disclosure. The projection device 220 can be applied to the headgear device 200 as shown in FIG. 9. In some embodiments of the present disclosure, the projection device 220 includes a light source 222, an optical unit 224, and an LCOS display panel 226. The LCOS display panel 226 is configured to receive color light from a light source and image signal from a controller to integrate and emit imaging light for projection.

In some embodiments of the present disclosure, the optical unit 224 in the projection device 220 is one or more optical lenses disposed on the light emitting side of the light source 222 to adjust the optical path of the light emitted by the light source 222. Includes. In some embodiments of the present disclosure, the light emitted by the light source 222 is white light, and the optical unit 224 includes a beam splitting unit disposed between the light source 222 and the LCOS display panel 226. The white light emitted by the light source 222 may pass through the optical lens and enter the beam splitting unit, so that the white light emitted by the light source 222 passes through the beam splitting unit and then the three primary colors of light, red light. , It is divided into blue light and green light. Red light, blue light, and green light are emitted according to the timing sequence.

In another embodiment, light source 222 may be controlled by a program such as a processor so that light source 222 can very quickly switch to emit three primary colors of light, red light, blue and green light according to a timing sequence. I can. In this case, the beam splitting unit may be omitted.

In some embodiments of the present disclosure, the optical unit 224 may include a polarizing beam splitter (PBS). The three primary colors of light, whether obtained by dividing the white light emitted by the light source 222 using a beam splitting unit or directly emitted by the light source 222, after passing through the polarizing beam splitter, the LCOS display panel Entering 226, the LCOS display panel 226 outputs a full color image beam to be output to the imaging screen 230 to be displayed.

Likewise, one or more reflective lenses or optical lenses may be configured between the LCOS display panel 226 and the imaging screen 230 to adjust the optical path of the image beam output by the LCOS image display panel 226. In some embodiments of the present disclosure, the projection device 220 may further include a heat dissipation unit. The heat dissipation unit may be, for example, a heat sink, a heat dissipation film, or the like. The heat dissipation unit may be thermally coupled to the light source 222 to prevent heat from accumulating and causing damage to the light source 222.

In summary, some embodiments of the present disclosure provide a display device and a method of manufacturing the same. By designing the sidewall of the first electrode such as the anode of the display unit of the display device as an inclined surface, the required thickness of the spacer layer is effectively reduced, and the spacer layer can have a smoother surface shape, whereby the second electrode Can prevent the problem of disconnection.

According to an embodiment of the present disclosure, an organic light emitting diode display device includes an integrated circuit, a first electrode, a spacer layer, an organic material stack layer, and a second electrode. The first electrode is electrically connected to the integrated circuit. The first electrode has an upper surface, a lower surface, and an inclined surface connecting the upper surface and the lower surface. The angle sandwiched between the inclined surface and the lower surface is in the range of about 45 degrees to about 80 degrees. The spacer layer covers the inclined surface of the first electrode. The organic material stack layer is disposed on the first electrode. The second electrode is disposed on the organic material stack layer and the spacer layer.

According to an embodiment of the present disclosure, a method of manufacturing an organic light emitting diode display device includes forming an electrode layer on an insulating layer, wherein the electrode layer is electrically connected to the integrated circuit through a via plug in the insulating layer. do. Then, the electrode layer is etched, and the electrode layer is etched by dry etching so that the first electrode has an upper surface, a lower surface, and an inclined surface connecting the upper surface and the lower surface. The reaction gas of contains boron chloride (BCl ₃ ). A spacer layer is formed to cover the inclined surface of the first electrode. An organic material stack layer is formed on the first electrode. A second electrode is formed on the organic material stack layer and the spacer layer.

According to an embodiment of the present disclosure, a method of manufacturing a liquid crystal on silicon (LCOS) display panel includes forming an electrode layer on an insulating layer, wherein the electrode layer is integrated through a via plug in the insulating layer. The deposition rate of the step of being electrically connected to the circuit and forming the electrode layer is from 30 Å per second to 200 Å per second so that the thickness of the electrode layer is 300 Å to 900 Å. Then, the electrode layer is etched to obtain a first electrode. A spacer layer is formed covering the sidewall of the first electrode. A liquid crystal layer and a second electrode are formed on the first electrode and the spacer layer.

The foregoing has shown features of various embodiments to enable those skilled in the art to better understand aspects of the present disclosure. Those skilled in the art should appreciate that the present disclosure can be readily used as a basis for designing or modifying other processes and structures to perform the same purposes and/or achieve the same advantages as the embodiments introduced herein. do. Those skilled in the art should also appreciate that such equivalent configurations do not depart from the true meaning and scope of the present disclosure, and that various changes, substitutions, and alternatives can be made without departing from the true meaning and scope of the present disclosure.

Example

Example 1. In an organic light emitting diode display device,

integrated circuit;

A first electrode electrically connected to the integrated circuit and having an upper surface, a lower surface, and a sloped surface connecting the upper surface and the lower surface, the angle sandwiched between the sloped surface and the lower surface is about 45 Degrees to about 80 degrees -;

A spacer layer covering the inclined surface of the first electrode;

An organic material stack layer disposed on the first electrode; And

A second electrode disposed on the organic material stack layer and the spacer layer

Including, an organic light emitting diode display device.

Example 2. The organic light emitting diode display device according to Example 1, wherein the second electrode has an undulating top surface.

Embodiment 3. The organic light emitting diode display device according to embodiment 1, further comprising a blocking layer disposed on the upper surface of the first electrode.

Example 4. The organic light emitting diode display device according to Example 3, wherein the thickness of the blocking layer is about 30 Å to about 200 Å.

Example 5. In Example 3, the thickness of the first portion of the blocking layer between the spacer layer and the first electrode is a second portion of the blocking layer between the first electrode and the organic material stack layer Which is greater than the thickness of the organic light emitting diode display device.

Example 6. The organic light-emitting diode of Example 1, further comprising an insulating layer disposed on the integrated circuit, and a via plug disposed in the insulating layer to electrically connect the integrated circuit and the first electrode. Diode display device.

Example 7. The organic light emitting diode display device according to Example 1, wherein an area of an upper surface of the first electrode is smaller than an area of a lower surface of the first electrode.

Example 8. The organic light emitting diode display device according to Example 1, wherein the first electrode has a thickness of about 300 Å to about 900 Å.

Example 9. In the method of manufacturing an organic light emitting diode display device,

Forming an electrode layer on the insulating layer, the electrode layer being electrically connected to the integrated circuit through a via plug in the insulating layer;

Etching the electrode layer to obtain a first electrode-The etching of the electrode layer is _{dry etching using at least boron chloride (BCl 3} ) as an etching gas, and the dry etching is performed in which the first electrode is on an upper surface and a lower surface. Performed to have a surface, and an inclined surface connecting the upper surface and the lower surface;

Forming a spacer layer covering the inclined surface of the first electrode;

Forming an organic material stack layer on the first electrode; And

Forming a second electrode on the organic material stack layer and the spacer layer

A method of manufacturing an organic light emitting diode display device comprising a.

Example 10. In Example 9, the step of forming the spacer layer,

Depositing a dielectric layer on the first electrode, the thickness of the dielectric layer being about 100 Å to about 400 Å; And

Removing a portion of the dielectric layer to define an opening region on the first electrode

The method of manufacturing an organic light emitting diode display device comprising a.

Example 11. The method of Example 10, wherein the organic material stack layer is filled in the opening area.

Example 12. The method of Example 10, further comprising forming a blocking layer on the first electrode prior to depositing a dielectric layer on the first electrode, wherein the thickness of the blocking layer is about 30 Å. To about 200 Å.

Example 13. The method of Example 12, wherein removing a portion of the dielectric layer to define an opening area on the first electrode comprises: a first portion of the blocking layer between the spacer layer and the first electrode. Removing a portion of the blocking layer such that the thickness is greater than the thickness of the second portion of the blocking layer between the first electrode and the organic material stack layer. Way.

Example 14. The method of Example 9, wherein an angle sandwiched between the inclined surface and the lower surface of the first electrode is about 45 degrees to about 80 degrees.

Example 15. The method of Example 9, wherein the pressure of the dry etching is about 4 mTorr to about 10 mTorr.

Example 16. The method of Example 9, wherein the flow rate of the etchant gas is from about 50 sccm (standard cubic centimeters per minute) to about 500 sccm.

Example 17. The method of Example 9, wherein the source radio frequency of the dry etching is between about 600W and about 1600W.

Example 18. The method of Example 9, wherein the bias radio frequency of the dry etching is between about 40W and about 200W.

Example 19. In the method of manufacturing a liquid crystal on silicon (LCOS) display panel,

Forming an electrode layer on the insulating layer-the electrode layer is electrically connected to the integrated circuit through a via plug in the insulating layer, and the deposition rate of the forming the electrode layer is about the thickness of the electrode layer From about 30 Å per second to about 200 Å per second, such that from 300 Å to about 900 Å;

Etching the electrode layer to obtain a first electrode;

Forming a spacer layer covering sidewalls of the first electrode; And

Forming a liquid crystal layer and a second electrode on the first electrode and the spacer layer

Including, a method of manufacturing an LCOS display panel.

Example 20. The method of Example 19, wherein the power of the step of forming the electrode layer is about 1500W to about 3150W.

Claims (10)

In the organic light emitting diode display device,
integrated circuit;
A first electrode electrically connected to the integrated circuit and having an upper surface, a lower surface, and an inclined surface connecting the upper surface and the lower surface-an angle sandwiched between the inclined surface and the lower surface is 45 degrees To 80 degrees -;
A spacer layer covering the inclined surface of the first electrode;
An organic material stack layer disposed on the first electrode; And
A second electrode disposed on the organic material stack layer and the spacer layer
Including, an organic light emitting diode display device. The organic light emitting diode display device of claim 1, wherein the second electrode has an undulating top surface. The organic light emitting diode display device of claim 1, further comprising a blocking layer disposed on an upper surface of the first electrode. The organic light emitting diode display device of claim 3, wherein the blocking layer has a thickness of 30 Å to 200 Å. The method according to claim 3, wherein the thickness of the first portion of the blocking layer between the spacer layer and the first electrode is greater than the thickness of the second portion of the blocking layer between the first electrode and the organic material stack layer. Phosphorus, organic light emitting diode display device. The organic light emitting diode display device of claim 1, further comprising an insulating layer disposed on the integrated circuit, and a via plug disposed in the insulating layer to electrically connect the integrated circuit and the first electrode. The organic light emitting diode display device of claim 1, wherein an area of the upper surface of the first electrode is smaller than an area of the lower surface of the first electrode. The organic light emitting diode display device of claim 1, wherein the first electrode has a thickness of 300 Å to 900 Å. In the method of manufacturing an organic light emitting diode display device,
Forming an electrode layer on the insulating layer, the electrode layer being electrically connected to the integrated circuit through a via plug in the insulating layer;
Etching the electrode layer to obtain a first electrode-The etching of the electrode layer is _{dry etching using at least boron chloride (BCl 3} ) as an etching gas, and the dry etching is performed in which the first electrode is on an upper surface and a lower surface. Performed to have a surface, and an inclined surface connecting the upper surface and the lower surface;
Forming a spacer layer covering the inclined surface of the first electrode;
Forming an organic material stack layer on the first electrode; And
Forming a second electrode on the organic material stack layer and the spacer layer
A method of manufacturing an organic light emitting diode display device comprising a. In the method of manufacturing a liquid crystal on silicon (LCOS) display panel,
Forming an electrode layer on the insulating layer-the electrode layer is electrically connected to the integrated circuit through a via plug in the insulating layer, and the deposition rate of the forming the electrode layer is, the thickness of the electrode layer is 300 Å to 900 Å, from 30 Å per second to 200 Å per second -;
Etching the electrode layer to obtain a first electrode;
Forming a spacer layer covering sidewalls of the first electrode; And
Forming a liquid crystal layer and a second electrode on the first electrode and the spacer layer
Including, a method of manufacturing an LCOS display panel.

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