1261868 九、發明說明： ’ 【發明所屬之技術領域】 ' 本發明係有關一種電極隔離壁，特別係指一種有機發 光二極體之發光顯示面板之電極隔離壁。 【先前技術】 由於有機發光二極體（organic light emitting diode ; OLED)具備自發光、厚度薄、反應速度快、視角廣、解析 度佳、高亮度、可用於撓曲性面板及使用溫度範圍廣等多 & 項優點，被認為係繼薄膜型液晶顯示器（thin film transistor liquid crystal display ; TFT-LCD)為新一代之平 面顯示器技術，而該有機發光二極體(OLED)的發光原理是 利用材料的特性，將電子電洞在發光層上結合，產生的能 量將發光分子由基態提昇至激發態，電子由激發態降回基 態時，其能量以光的形式釋出，因而達到有不同波長的發 光元件的產生。其中陽極（anode)為ITO導電玻璃膜，1261868 IX. Description of the invention: ‘Technical field to which the invention pertains ′′ The present invention relates to an electrode partition wall, and particularly to an electrode partition wall of an organic light-emitting diode light-emitting display panel. [Prior Art] Since the organic light emitting diode (OLED) has self-luminous, thin thickness, fast response, wide viewing angle, good resolution, high brightness, can be used for flexible panels and wide temperature range The advantages of the multi- & are considered to be the next generation of flat-panel liquid crystal display (TFT-LCD) as a new generation of flat panel display technology, and the principle of illumination of the organic light-emitting diode (OLED) is utilized. The characteristics of the material combine the electron holes on the luminescent layer, and the generated energy raises the luminescent molecules from the ground state to the excited state. When the electrons are returned from the excited state to the ground state, the energy is released in the form of light, thus reaching different wavelengths. Generation of light-emitting elements. Wherein the anode is an ITO conductive glass film,
以濺鍍或蒸鍍方式，附著於玻璃或透明塑膠基板上，陰極 I 則含有鎂（Mg)、鋁（A1)、鋰(Li)等金屬，在二個電極間則是 多個有機薄膜形成的發光區域，包含電洞注入層（hole injection layer ; HIL)、電洞傳遞層（hole transport layer ; HTL )、有機發光層（emitting layer )及電子傳遞層（electron transport layer ; ETL)，在實際應用量產時，基於不同需求 考量，有時還會包含其他不同薄膜。 在有機發光二極體之電極隔離壁製造技術中，現以日 本 Tohoku Pioneer Electronic 公司提出之倒梯形（inverted 5 1261868 trapezoid)形狀之電極隔離壁為主。如「第1圖」所示之剖 面示意圖’用以各第二電極間電性絕緣之電極隔離壁2結 構’係在已形成一橫條狀之第一電極之基板1上，形成與 該第一電極垂直之電極隔離壁2 ;其中該電極隔離壁2為 長條狀兩侧外懸凸出（overhanging p〇rti〇n)的隔層（barrier rib)，其剖面係如同倒梯形形狀，即該電極隔離壁2之上 底面2a寬度大於下底面21)寬度，即倒梯形兩斜邊與基板 1形成一夾角0。該電極隔離壁2之功能不僅可以使第二 電極產生自動圖案化，且在有機膜選擇成膜時之支撐部。 此倒梯形的電極隔離壁2係使用負型光阻(negative type photoresist)之聚合物，一種化學增益放大型之光阻材 料，藉由曝光、曝後烤(post exposure baking ; PEB)、顯影 等製程而達成所需要之倒梯形形狀。但該化學增益放大型 之光阻材料不只材料成本高，實際之運用製程中，因為光 阻材料的化學反應不均，使得橫向方向的顯影量控制不 易’所以倒梯形之電極隔離壁2之侧面與基底1之夾角Θ 不易控制’容易有過顯影形成一種倒三角形形狀，即倒梯 开乂斜邊與基板1之夾角Θ過小，使該電極隔離壁2之機械 強度#父脆弱，在後續製程上易受外力而損壞產生缺陷 (defects) ’進而影響後續的製程；或蝕刻不完全，使倒梯 側邊與基板1之夾角0過大，造成後續之蒸鍍流程造 成第—電極短路之問題。所以使用此種化學增益放大型之 光P材料所製作之電極隔離壁2會有材料成本高和製程良 率低之缺失。 6 1261868 又，畫素間的距離取決於該電極隔離壁2之寬度，因 為該化學增益放大型之光阻材料之物性限制、電極隔離壁 2之機械強度和侧邊與基板1間之夾角0之考量，所以該 電極隔離壁2之下底面2b寬度不易縮小，連帶的其上底 面2a寬度也無法縮小，所以該上底面2a寬度將影響基板 1上固定區域之畫素可發光面積之大小。 【發明内容】 爰是，本發明之主要目的在於解決上述習知之缺失， 避免缺失存在，係改變該電極隔離壁之結構，利用曝光原 理使光阻材料化學反應不均之影響度降至最低，僅需使用 一般正型光阻(positive type photoresist)材料即可形成所需 之該電極隔離壁，達到提高良率，降低製程成本之效益。 本發明之另一目的在於改變該電極隔離壁之結構，縮 小該電極隔離壁之寬度，所以在固定區域内可發光面積將 可加大，增加單一畫素的開口率，使有機發光二極體之發 光顯示面板可實現更高精細的顯示效果。 本發明係一種電極隔離壁，係在一已圖案化第一電極 之基板上，形成一與該第一電極垂直之電極隔離壁。本發 明係對一般之正型光阻材料，先以斜向曝光，再以垂直曝 光之兩次曝光方式形成該電極隔離壁。其中該電極隔離壁 包括一與該基板接觸之下底面；一與該下底面平行之上底 面，且該上底面寬度大於該下底面。以及一第一侧面，且 該第一侧面與該下底面垂直；一第二側面，係相對於該第 一侧面之另一侧面，且該第二侧面與該基板表面形成一銳 角夾角，形成該電極隔離壁結構一侧面外懸凸出。該電極 7 1261868It is adhered to glass or transparent plastic substrate by sputtering or evaporation, and cathode I contains metal such as magnesium (Mg), aluminum (A1) and lithium (Li), and a plurality of organic thin films are formed between the two electrodes. The light-emitting region includes a hole injection layer (HIL), a hole transport layer (HTL), an organic light-emitting layer, and an electron transport layer (ETL). When mass production is applied, it is sometimes based on different needs and sometimes contains other different films. In the electrode isolation wall manufacturing technology of the organic light-emitting diode, the inverted wall of the inverted trapezoid (inverted 5 1261868 trapezoid) shape proposed by Tohoku Pioneer Electronic Co., Ltd. is mainly used. A schematic cross-sectional view of the electrode spacer wall 2 for electrically insulating between the second electrodes is formed on the substrate 1 on which the first electrode of the horizontal strip is formed, and is formed in the same manner as in the first embodiment. An electrode vertical partition wall 2; wherein the electrode partition wall 2 is an overhanging rib (overhanging), the section of which is like an inverted trapezoidal shape, that is, The width of the upper bottom surface 2a of the electrode isolation wall 2 is greater than the width of the lower bottom surface 21), that is, the two oblique sides of the inverted trapezoid form an angle 0 with the substrate 1. The function of the electrode partition wall 2 not only enables the second electrode to be automatically patterned, but also the support portion when the organic film is film-formed. The inverted trapezoidal electrode partition wall 2 is a negative type photoresist polymer, a chemical gain amplification type photoresist material, by exposure, post exposure baking (PEB), development, etc. The process achieves the inverted trapezoidal shape required. However, the chemical gain-amplifying photoresist material is not only high in material cost, but in the actual application process, since the chemical reaction of the photoresist material is uneven, the development of the lateral direction is difficult to control, so the side of the electrode partition wall 2 of the inverted trapezoid is The angle 与 with the substrate 1 is not easy to control 'easy to over-develop to form an inverted triangle shape, that is, the angle between the oblique edge of the inverted ladder and the substrate 1 is too small, so that the mechanical strength of the electrode isolation wall 2 is weak, in the subsequent process The upper part is easily damaged by external force and causes defects (and thus affects the subsequent process; or the etching is incomplete, so that the angle between the side of the inverted ladder and the substrate 1 is too large, causing the problem of short-circuiting of the first electrode caused by the subsequent evaporation process. Therefore, the electrode partition wall 2 made of the chemical gain-amplifying optical material P has a high material cost and a low process yield. 6 1261868 Moreover, the distance between the pixels depends on the width of the electrode partition wall 2, because the physical property of the chemical gain-amplifying photoresist material, the mechanical strength of the electrode partition wall 2, and the angle between the side and the substrate 1 Therefore, the width of the lower bottom surface 2b of the electrode partition wall 2 is not easily reduced, and the width of the upper bottom surface 2a of the associated strip cannot be reduced. Therefore, the width of the upper bottom surface 2a affects the size of the pixel light-emitting area of the fixed area on the substrate 1. SUMMARY OF THE INVENTION In view of the above, the main object of the present invention is to solve the above-mentioned defects, to avoid the existence of defects, to change the structure of the electrode partition wall, and to minimize the influence of uneven chemical reaction of the photoresist material by using the exposure principle. It is only necessary to use a positive type of photoresist material to form the desired electrode isolation wall, thereby improving the yield and reducing the cost of the process. Another object of the present invention is to change the structure of the electrode isolation wall and reduce the width of the electrode isolation wall, so that the light-emitting area can be increased in the fixed area, increasing the aperture ratio of the single pixel, and making the organic light-emitting diode The light-emitting display panel can achieve a higher-definition display effect. The present invention is an electrode spacer wall formed on a substrate on which a first electrode has been patterned to form an electrode spacer wall perpendicular to the first electrode. The present invention is directed to a general positive-type photoresist material which is first exposed in an oblique direction and then formed by two exposures of vertical exposure. The electrode isolation wall includes a bottom surface in contact with the substrate; a bottom surface parallel to the lower bottom surface, and the upper bottom surface has a width greater than the lower bottom surface. And a first side, the first side is perpendicular to the lower bottom surface; a second side is opposite to the other side of the first side, and the second side forms an acute angle with the surface of the substrate, forming the The electrode isolation wall structure is overhanged on one side. The electrode 7 1261868
隔離壁不僅可以使後續第二電極製程產生自動圖案化，且 在有機膜選擇成膜時作為支撐部材之用。 【實施方式】 現配合圖式說 兹有關本發明之詳細内容及技術說明 明如下： —=參閱「第2圖」所示，係本發明之電極隔離壁之剖 面不意圖。如圖所示··一種電極隔離壁，係在一已圖案化 第-電極之基板10上，形成一與該第_電極垂直，用以 =第二電極之電極隔離壁21結構，該電極隔離壁21包 =二底面2lb ’係該電極隔離壁21與該基板ι〇之接處 —，一上底面21a’係該電極隔離壁21與該下底面2ib平 订之平面，且該上底面21a寬度大於該下底面训。 當一二第—侧面2U’係該電極_壁21之—側面，且該 相對於：j1C與5亥下底面21b垂直；-第二側面21d ’係 兮弟r側*21c之另一側面’且該第二側面叫與 =10表面形成一銳角之夾角α，形 =隔離壁結構。其中該夹角，係為15。至75;、凸 而该夹角α最佳角度為3〇。至6〇。之間。 3-1〜3現3進圖一步Hi,明本發明之製造可行性’請參閱「第 作方回」 V砰細說明本發明之電極隔離壁21.之製 離壁21之製作方法，主心 電極垂直，且用於圣之基:二0上’形成與該第一 η’且該電極隔離壁21、二：之電極隔離壁 二二 ，其主要製作流程為： ⑷塗佈-隔離壁材料2G於該基板1G上，其中該隔離 8 1261868 i般正型光阻；然後顧―已具該電極隔 30非垂直之钭對該隔離㈣料2G作光線與光罩 印於該隔離=? 「第3-1圖」所示）形成圖案轉 α。 '"弟—側面21d外側與基板10表面的夾角 作光罩：:同千一光罩30，對該隔離壁材料 顯步驟之曝光，再對該隔離壁材料20進行 ，形成該電極隔離壁21於該基板10上（如「第 梯形I」狀所7");且該^隔離壁21之剖面圖為—倒直角 传,^參閱「第4]〜4_5圖」本發明之製作方法二，主要 二已形成橫條狀之第—電極之基板⑼i，形成與 开〈成直’且用於後續製程隔斷第二電極之無機材料所 隔^ 5f隔離壁51 (如「第4_5圖」所示)，且該電極 程為，剖面圖為—倒直㈣形形狀。該主要製作流 ⑷形成一層隔離壁材料50於該基板4〇上，且塗佈一 6〇於該隔離壁材料50表面(如「第4-1 」所示); 離㈣料5〇係為—無機材料；錢再利用一已 影该電=隔離案之光罩7G，對該光阻層6Q做黃光顯 =成所需之隔離壁圖案61與該該隔離壁材〇 (如「第4-2圖」所示）。 τ 1261868 (b)利用該隔離壁圖案6i做為後續製程之遮 # 由該隔離壁圖案61為一遮罩對該隔離壁 〇、钻，^ 等，(如「第《圖」所示)，此步驟之= :::::::面51d，使該第… (C)相同的，利用該隔離壁圖案61為一遮罩再 離壁材料5。作垂直非等向性餘刻（如「第4_4【再 以控制該第一侧面51c，使該第—側面：)盘 该下底面51b呈垂直樣態。 ” (d)經過前兩步驟之蝕刻，再對該隔離壁材 顯影製程，形成該電極隔離壁51於該基板4g上（如j Γ構圖」所示);且該電極隔離壁51為-側面外懸凸出： 兩兩次曝光之方式形成該電極隔離壁A鱼 兩夂蝕刻之方式形成該電極隔離壁51 : …〗為-侧面(第一側面21c、51:)=:= 別、训之橫條’相對於此垂直側面之另一侧面：：：= (第二^面aidid)，且該斜面與該基板1〇、 开 ::ί 形成該上底面21a、51a-側邊外懸凸出： 續V 二極體元件蒸鑛完有機材料後，後 、，第-電_膜上去時，因該電極隔離壁21、5 面21a、51a側邊外懸凸出，可隔 的上底 兩個電極隔離壁21、51之門一 屬成膜於 且，該電極隔離壁rv:達型 隔r二為—無機材料，而非習知構成之二 型光阻材料，所以材料成本可大幅降低。同時二;= 10 1261868 化學反應較該化學增益放大型光阻 Πΐ: 所以製程上不會有化學反應不均之情況， :隔離壁21、51之斜面外側與該基板I㈣ 據二二α為可控制的’如此該電極隔離壁21、51之 膜二之控制，所以在後續製程上’如有機膜選擇成 續i程的：二’將不易受外力而損壞產生缺陷，更利於後 、"壬、，仃，與習用相較可大幅提昇製程良率。 ^對於晝素間的距離，因為本發明之電極隔離壁 侧面為垂直面’所以在該下底面21b、51b寬 :習障況下’本發明之上底面21a、51a寬度將 習知的卜懸凸出’所以該上底面2ia、5ia將較 明查辛的ΐϊ/寬度縮小，所以在固定區域面積下，本發 有將較f知大，即單一晝素將會 ’整個有機發光二極體之發光顯示面板可 只現更鬲精細的顯示效果。 本於僅ί本發明之較佳實施例而已，並非用來限定 等二化辄，、。即凡依本發明申請專利範圍所做的均 專艾化與修飾，皆為本發明專利範圍所涵蓋。 【圖式簡單說明】 ，1圖，係習知之電極隔離壁之剖面示意圖。 =圖，係、本發明之電極隔離壁之剖面示意圖。 面示=〜。第3_3 _ ’係本發明之電極隔離壁製作流程之剖 圖1第网4·5圖’係本發明之另一電極隔離壁製作流程 <刹面不意圖。 【主要元件符號說明】 11 1261868 1 :基板 2 ： 電極隔離壁 2a ： 上底 面 2b ： 下底 面 θ、 a · 夾角 10、 40 ： 基板 20、 50 ： 隔離壁材料 21、 51 ： 電極隔離壁 21a 、51a :上底面 21b 、51b :下底面 21c 、51c :第一側面 21d ^ 51d :第二侧面 30、 70 : 光罩 60 : 光阻層 61 : 隔離壁圖案The partition wall not only enables automatic patterning of the subsequent second electrode process, but also serves as a support member when the organic film is selected for film formation. [Embodiment] The details and technical description of the present invention will now be described as follows: - = Referring to "Fig. 2", the cross-section of the electrode partition wall of the present invention is not intended. As shown in the figure, an electrode isolation wall is formed on a substrate 10 on which a patterned first electrode is formed, and is formed perpendicular to the _th electrode for the structure of the electrode isolation wall 21 of the second electrode. The wall 21 package=the second bottom surface 2lb′ is the junction of the electrode partition wall 21 and the substrate ι—the upper bottom surface 21a′ is a plane in which the electrode partition wall 21 and the lower bottom surface 2ib are aligned, and the upper bottom surface 21a The width is greater than the lower bottom training. When the first and second side faces 2U' are the side faces of the electrode_wall 21, and the direction is opposite to: j1C and the 5th lower bottom surface 21b; the second side 21d' is the other side of the side of the r-side *21c' And the second side is called an angle α formed by an acute angle with the surface of the =10, and the shape is a partition wall structure. The angle is 15 . Up to 75; convex, and the angle α is optimally 3 〇. To 6 〇. between. 3-1~3 Now 3Into the picture step Hi, the manufacturing feasibility of the invention is as follows. Please refer to the "Partner's Back" V. Detailed description of the manufacturing method of the electrode wall 21 of the electrode partitioning wall 21. The core electrode is vertical and is used for the base of the base: the upper and lower sides of the electrode and the electrode isolation wall 21 and the second electrode are separated by a wall. The main production process is as follows: (4) coating-isolation wall The material 2G is on the substrate 1G, wherein the isolation 8 1261868 i-like positive photoresist; and then the electrode has 30 non-vertical barriers to the isolation (four) material 2G as light and reticle printed on the isolation =? "Fig. 3-1" shows a pattern turn α. '"Different-the angle between the outer side of the side surface 21d and the surface of the substrate 10 is used as a mask: the same as the photomask 30, the step of exposing the partition wall material, and then the partition wall material 20 is formed to form the electrode partition wall 21 is on the substrate 10 (such as "Trapezoidal I" 7"); and the cross-sectional view of the partition wall 21 is - inverted right angle, ^ see "4th ~ 4_5", the second method of the present invention The main substrate 2 (9) i, which has formed a strip-shaped electrode-electrode, is formed to be separated from the inorganic material of the second electrode for subsequent processing (see "4_5") Shown, and the electrode path is, the cross-sectional view is - inverted (four) shape. The main production stream (4) forms a partition wall material 50 on the substrate 4, and is coated with a layer of 6 on the surface of the partition wall material 50 (as shown in "4-1"); - Inorganic material; the money is reused. The photomask 7G of the electricity = isolation case is formed, and the photoresist layer 6Q is yellowed into the desired partition wall pattern 61 and the partition wall material (for example, "4- 2) shows). τ 1261868 (b) using the partition wall pattern 6i as a mask for the subsequent process. The partition wall pattern 61 is a mask for the partition wall, the drill, the ^, etc. (as shown in "Fig.") This step =::::::: face 51d, so that the first (C) is the same, and the partition wall pattern 61 is used as a mask and the wall material 5. Making a vertical anisotropic remnant (such as "4_4 [and further controlling the first side 51c, making the first side:) the lower bottom surface 51b of the disk is in a vertical state." (d) After the first two steps of etching And developing the partition wall material to form the electrode partition wall 51 on the substrate 4g (as shown by the configuration of J Γ); and the electrode partition wall 51 is - side overhanging: two exposures The electrode partition wall A is formed by the method of forming the electrode partition wall 51: the side surface (the first side surface 21c, 51:) =: = the other, the horizontal strip of the training is opposite to the vertical side The other side is:::= (second surface aidid), and the inclined surface and the substrate 1〇, open :: ί form the upper bottom surface 21a, 51a - the side is overhanging and protruding: continued V diode element steaming After the organic material is mined, after the first electric film is removed, the electrode partition walls 21, 5 faces 21a, 51a are laterally overhanging, and the upper and lower electrode partition walls 21, 51 can be separated. The gate is formed into a film, and the electrode partition wall rv: the spacer type r is an inorganic material, instead of the conventionally formed type II photoresist material, so the material cost can be large. Reduced. At the same time; = 10 1261868 chemical reaction compared to the chemical gain amplification type photoresist: so there will be no chemical reaction unevenness in the process: the outer side of the slope of the partition walls 21, 51 and the substrate I (four) according to the second two alpha Controlled by the control of the membrane 2 of the electrode isolation walls 21, 51, so in the subsequent process 'if the organic film is selected to continue the process: two' will not be easily damaged by external forces and produce defects, which is more conducive to the latter, "壬, 仃, and the use of the program can greatly improve the process yield. ^ For the distance between the elements, since the side of the electrode partition wall of the present invention is a vertical surface 'the width of the lower bottom surface 21b, 51b is wide: the width of the upper surface 21a, 51a of the present invention will be conventionally suspended. Protruding 'so the upper bottom surface 2ia, 5ia will be smaller than the 查/width of the Chasin, so in the area of the fixed area, the hair will be larger than the f, that is, a single element will be 'the entire organic light-emitting diode The light-emitting display panel can only display a more detailed display effect. This is a preferred embodiment of the invention, and is not intended to limit the scope of the invention. That is, all the modifications and modifications made in accordance with the scope of the patent application of the present invention are covered by the scope of the invention. [Simple description of the diagram], Fig. 1, is a schematic cross-sectional view of a conventional electrode isolation wall. = Fig., is a schematic cross-sectional view of the electrode isolation wall of the present invention. Face ==. 3_3 _ ′ is a cross-section of the electrode partition wall manufacturing process of the present invention. Fig. 1 is a view showing another electrode partition wall manufacturing process of the present invention. [Description of main component symbols] 11 1261868 1 : Substrate 2 : Electrode isolation wall 2a : Upper bottom surface 2b : Lower bottom surface θ, a · Angle 10, 40 : Substrate 20, 50 : Partition wall material 21, 51 : Electrode isolation wall 21a, 51a: upper bottom surface 21b, 51b: lower bottom surface 21c, 51c: first side surface 21d ^ 51d: second side surface 30, 70: photomask 60: photoresist layer 61: partition wall pattern