JP2002015860A - Organic electroluminescent element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an organic electroluminescent element provided with flexibility and impact resistance, and capable of preventing the deterioration of an organic EL layer thereof and having the superior durability. SOLUTION: A first electrode 3, an organic electroluminescent layer 9 having the light-emitting material composed of the organic compound and a second electrode 7 are provided on a substrate 2 in this order. The substrate 2 is formed of a film-like plastic substrate, and the first electrode 3 is made of nitride and has translucency.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescence (organic EL) device used as a display device, a light-emitting device or the like.

[0002]

2. Description of the Related Art Electroluminescent devices (hereinafter referred to as E)
It is called an L element. ) Is an element that emits light by being excited by applying an electric field to the fluorescent compound. In addition, since the EL element is self-luminous, it has high visibility, and since it is a completely solid element, it has characteristics such as excellent impact resistance. Are researched and developed. EL like this
The element is an inorganic EL element depending on the fluorescent compound used,
They can be classified into organic EL devices.

[0003] Among them, the organic EL element injects electrons and holes (holes) from the outside, recombine in the light emitting layer made of an organic compound, and excites the light emission center by the recombination energy at this time. Things. Organic E
The L element operates at a direct current and is driven at a much lower voltage than the inorganic EL element. Further, it has a sandwich structure in which a light emitting layer and a carrier transporting layer are sandwiched between both electrodes of a cathode and an anode, and has a feature that a planar light emitting body can be obtained by making at least one of the electrodes transparent.

[0004]

By the way, in the organic EL device, a glass substrate is conventionally used as a substrate. However, the glass substrate is heavy and is easily broken by an external impact such as dropping, that is,
There is a disadvantage that it is easily broken. Further, in consideration of the use of the organic EL element in various fields in the future development, an organic EL element which is as light as possible, has flexibility, and has high impact resistance against external impact is desired.

In an organic EL device, the anode material constituting the anode has a large work function from the vacuum level of the electrode material in order to inject holes efficiently, and the organic electroluminescence from the anode side. In order to take out the light-transmitting material, a light-transmitting material is used. Among them, oxides such as ITO and SnO ₂ are widely used from the viewpoint of production efficiency and the like.

However, when these oxides such as ITO are used as the anode material, oxygen and indium in the anode material may enter and diffuse into the organic EL layer from the interface between the organic EL layer and the anode. When oxygen or indium enters or diffuses into the organic EL layer, the oxygen or indium deteriorates the organic EL layer. As a result, the organic EL element is deteriorated due to the deterioration of the organic EL layer. There is a possibility that the durability of the device may be reduced.

Accordingly, the present invention has been made in view of the above-mentioned conventional circumstances, and is lightweight, has flexibility and impact resistance, prevents deterioration of the organic EL layer, and has improved durability. An object is to provide an excellent organic EL device.

[0008]

The organic EL device according to the present invention has an organic electroluminescent layer (hereinafter, referred to as an organic EL layer) having a first electrode and a light emitting material composed of an organic compound on a substrate, and a second electrode. Electrodes in this order, the substrate is a film-shaped plastic substrate, and the first electrode is
It is a light-transmitting electrode made of a nitride.

The organic EL device according to the present invention uses a film-shaped plastic substrate as a substrate. Thereby, this organic EL element is an organic EL device using a conventional glass substrate.
Significantly lighter than the element.

Further, since the organic EL element uses a film-like plastic substrate which is a flexible substrate, the organic EL element itself has flexibility. And, since the organic EL element has flexibility, when various devices are configured using the organic EL element, for example, when a display or the like is configured, the organic EL element can be rolled and stored. Various usage forms can be taken.

Since the organic EL element uses a film-shaped plastic substrate which is superior in impact resistance to impacts such as dropping as compared with a glass substrate, it has excellent impact resistance.

Further, in this organic EL device, since nitride is used as the anode material, oxygen and indium in the anode material do not enter or diffuse into the organic EL layer. Therefore, the organic EL layer does not deteriorate due to the penetration and diffusion of oxygen and indium in the anode material into the organic EL layer.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view of an essential part showing an example of an organic electroluminescence device (hereinafter, referred to as an organic EL device) to which the present invention is applied.

The organic EL element 1 includes a film-shaped plastic substrate 2, a first electrode 3 as an anode formed on the film-shaped plastic substrate 2, and an organic EL layer formed on the anode as the first electrode 3. 9, a cathode serving as the second electrode 7 formed on the organic EL layer 9, and a protective layer 8 formed so as to cover the cathode serving as the second electrode 7 and the organic EL element 1. .

The film-like plastic substrate 2 is made of organic E
Each of the layers constituting the organic EL element 1 is formed on the film-shaped plastic substrate 2 as a support for the L element 1.

In this organic EL device 1, since the film-shaped plastic substrate 2 is used as the substrate, the weight is significantly reduced as compared with the conventional organic EL device using a glass substrate. Accordingly, when various devices are configured using the organic EL element 1, for example, when a large display or the like is configured, the devices can be reduced in weight, thereby increasing the degree of freedom in device design. It becomes possible.

In this organic EL device 1, a film-like plastic substrate 2 having good flexibility is used as a substrate.
, The organic EL element 1 itself has flexibility. That is, in this organic EL element 1, the film-shaped plastic substrate 2 is used as the substrate, and therefore, unlike the conventional case where a glass plate or the like is used as the substrate, the organic EL element 1 is formed by the flexibility of the film-shaped plastic substrate 2 itself. The element 1 can have good flexibility. And, by using the film-shaped plastic substrate 2 as the substrate, the organic EL element 1
Since the organic EL device has good flexibility,
When various devices are configured using the element 1, for example, when a display or the like is configured, it is possible to take various usage forms such as being able to be rolled up and stored.

Then, the film-like plastic substrate 2
Is brittle like a glass substrate and does not show brittleness. Therefore, the organic EL element 1 using such a film-shaped plastic substrate 2 is liable to be broken, that is, easily broken by an external impact such as dropping, like the conventional organic EL element using a glass substrate. Without
Impact resistance against external impact can be greatly improved.

The material used for the film-like plastic substrate 2 is, for example, polyethylene terephthalate (PE).
T), polyethylene naphthalate (PEN), polyether sulfone (PES), polyolefin (PO) and the like can be suitably used. The material used for the film-shaped plastic substrate 2 is not limited to these materials, and any material can be used as long as it is transparent and has good optical characteristics.

The thickness of the film-shaped plastic substrate 2 is preferably in the range from 50 μm to 500 μm. This is because when the thickness of the film-shaped plastic substrate 2 is less than 50 μm, it is difficult for the film-shaped plastic substrate 2 itself to maintain sufficient flatness, and therefore, when the organic EL element 1 is formed, This is because it may be difficult to maintain good flatness of the element 1. If the thickness of the film-shaped plastic substrate 2 is larger than 500 μm, it is difficult to freely bend the film-shaped plastic substrate 2 itself, that is, the flexibility of the film-shaped plastic substrate 2 itself becomes poor. When the organic EL element 1 is constructed,
This is because the flexibility of the L element 1 deteriorates.

The anode material used for the first electrode 3 serving as the anode has a large work function from the vacuum level of the electrode material in order to inject holes efficiently, and the organic electroluminescence is taken out from the anode side. In order to make it possible, it is preferable to use a light-transmitting material. As such a material, for example, oxides such as ITO and SnO ₂ are widely used. However, when the anode material contains oxygen or indium, there is a possibility that such oxygen or indium may enter and diffuse into the organic EL layer 9 from the interface between the organic EL layer and the anode. When oxygen or indium invades or diffuses into the organic EL layer 9, the oxygen or indium may deteriorate the organic EL layer 9, and the durability of the organic EL element 1 may be deteriorated due to the deterioration. is there. Therefore, it is preferable that the anode material constituting the anode contains as little oxygen and indium as possible.

Therefore, the organic EL element 1 is characterized in that a nitride is used as an anode material of the first electrode 3. In this specification, a nitride refers to a nitrogen compound containing no oxygen and no indium.

By using nitride as the anode material, since oxygen and indium do not exist in the anode material,
As described above, there is no possibility that oxygen or indium in the anode material enters or diffuses into the organic EL layer 9 from the interface between the organic EL layer 9 and the anode. Since the phenomenon that oxygen and indium in the anode material penetrate and diffuse into the organic EL layer 9 to deteriorate the organic EL layer 9 does not occur, the organic EL layer 9 does not deteriorate.
There is no possibility that the durability of the organic EL element 1 is deteriorated due to the deterioration of the device. That is, since the organic EL element 1 uses nitride as the anode material, the durability of the organic EL element 1 does not deteriorate due to oxygen or indium in the anode material. This is an excellent organic EL device 1.

As a nitride which can be used as such an anode material, for example, TiN can be mentioned. Ti
When N is used as an anode material, TiN has good adhesion to a film-like plastic substrate, for example, polyethylene terephthalate (PET), so that it is difficult to peel off from the film-like plastic substrate 2 and the durability of the organic EL element 1 can be improved. it can. Further, the nitride is not limited to this, and any material can be used as long as it has a large work function from the vacuum level of the electrode material and has a light-transmitting property.

It is preferable that the thickness of the above-mentioned anode be 3 nm or more and 10 nm or less. This is because if the thickness of the anode is less than 3 nm, the thickness is too small to function sufficiently as an anode. On the other hand, if the thickness of the anode is greater than 10 nm, the transmittance of visible light becomes poor, which makes the anode unsuitable for practical use.

The organic EL layer 9 includes a hole transport layer 4, a light emitting layer 5, and an electron transport layer 6, and these layers are formed on the anode in this order.

The hole transporting layer 4 transports holes injected from the anode to the light emitting layer 5. Materials that can be used as the hole transport material include benzene, styrylamine, triphenylmethane, porphyrin, triazole, imidazole, oxadiazole, polyarylalkane, phenylenediamine, arylamine, oxazole, anthracene, fluorenone, hydrazone, stilbene Or derivatives thereof, and heterocyclic conjugated monomers, oligomers, and polymers such as polysilane compounds, vinylcarbazole compounds, thiophene compounds, and aniline compounds.

Specifically, α-naphthylphenyldiamine, porphyrin, metal tetraphenylporphyrin,
Metal naphthalocyanine, 4,4 ′, 4 ″ -trimethyltriphenylamine, 4,4 ′, 4 ″ -tris (3-methylphenylphenylamino) triphenylamine) triphenylamine, N, N, N ′, N '-Tetrakis (p
-Tolyl) p-phenylenediamine, N, N, N ',
N′-tetraphenyl 4,4′-diaminobiphenyl,
Examples include, but are not limited to, N-phenylcarbazole, 4-di-p-tolylaminostilbene, poly (paraphenylenevinylene), poly (thiophenvinylene), poly (2,2′-thienylpyrrole), and the like. is not.

In the light emitting layer 5, electrons and holes are combined, and the binding energy is emitted as light. In FIG. 1, the light emitting layer 5 is provided independently, but the hole transporting light emitting layer serving also as the hole transporting layer 4 and the light emitting layer 5 and also serving as the electron transporting layer 6 and the light emitting layer 5. Alternatively, an electron transporting light emitting layer can be used. When the hole transporting light emitting layer is used, holes injected from the anode into the hole transporting light emitting layer are confined by the electron transporting layer, so that recombination efficiency is improved. When an electron transporting light emitting layer is used, the electrons injected from the cathode into the electron transporting light emitting layer are confined in the electron transporting light emitting layer. Recombination efficiency is improved.

The material of the light emitting layer 5 is such that holes can be injected from the anode side and electrons can be injected from the cathode side when voltage is applied, and the injected charges, that is, holes and electrons are moved. For example, an organic material such as a low-molecular fluorescent dye, a fluorescent polymer, or a metal complex which satisfies conditions such as providing a recombination field and high luminous efficiency can be used.

Examples of such materials include anthracene, naphthalene, phenanthrene, pyrene, chrysene, perylene, butadiene, coumarin, acridine, stilbene, tris (8-quinolinolato) aluminum complex, bis (benzoquinolinolato) beryllium complex, Tri (dibenzoylmethyl) phenanthroline europium complex, ditoluylvinylbiphenyl and the like can be mentioned.

The electron transport layer 6 transports electrons injected from the second electrode 7 serving as a cathode to the light emitting layer 5. Examples of a material that can be used as the material of the electron transport layer 6 include quinoline, perylene, bisstyryl, pyrazine, and derivatives thereof.

Specific examples thereof include 8-hydroxyquinoline aluminum, anthracene, naphthalene, phenanthrene, pyrene, chrysene, perylene, butadiene, coumarin, acridine, stilbene, and derivatives thereof.

As a cathode material used for the second electrode 7 serving as a cathode, it is preferable to use a metal having a small work function from a vacuum level of the electrode material in order to inject electrons efficiently.

Specifically, aluminum, indium,
Low work function metals such as magnesium, silver, calcium, barium lithium and the like may be used alone, or these metals may be used as an alloy with another metal with increased stability.

The protective layer 8 seals the organic EL element 1 and blocks oxygen and moisture in order to ensure the driving reliability of the organic EL element 1 and to prevent the organic EL element 1 from being deteriorated. It works. As a material used for the protective layer 8, airtightness can be maintained, and a single metal or an alloy thereof that can transmit light emitted from the light emitting layer 5 can be appropriately selected and used. The protective layer 8 is formed not only on the cathode but also on the organic EL as shown in FIG.
It is preferable to form so as to cover the entire element 1. By forming the protective layer 8 so as to cover the entire organic EL element 1, it is possible to prevent oxygen and moisture from entering the organic EL element 1 from the outside.

Specifically, aluminum, gold, chromium,
Examples include niobium, tantalum, titanium, and silicon oxide.

Each of the layers constituting the above-described organic EL device 1 may have a laminated structure composed of a plurality of layers.

The organic EL device 1 constructed as described above
As described above, since the film-shaped plastic substrate 2 is used as the substrate, the weight can be significantly reduced as compared with an organic EL device using a conventional glass substrate.

Since the organic EL element 1 uses a film-like plastic substrate 2 having good flexibility as a substrate, the organic EL element 1 itself has good flexibility.

Since the organic EL element 1 uses the film-shaped plastic substrate 2 having excellent impact resistance against impacts such as dropping as a substrate, the impact resistance can be greatly improved.

Further, since the organic EL element 1 uses nitride as an anode material, oxygen and indium in the anode material penetrate and diffuse into the organic EL layer 9 and are caused by the oxygen and indium. The organic EL layer 1 does not deteriorate.

The organic EL device 1 configured as described above
By selectively applying a DC voltage between the anode and the cathode, holes injected from the anode pass through the hole transport layer 4 and electrons injected from the cathode pass through the electron transport layer 4. It moves and reaches the light emitting layer 5 respectively. As a result, in the light emitting layer 5, recombination of electrons and holes occurs, and light emission of a predetermined wavelength is generated therefrom. Further, by selecting the material of the light-emitting layer 5, it is possible to obtain a full-color or multi-color organic EL element that emits three colors of R, G, and B. The organic EL element 1 can be used, for example, for a display, but can also be used as a light source and the like, and can be used for various optical uses.

The above-described organic EL device 1 can be manufactured as follows.

First, as a substrate, for example, a 50 μm thick P
Prepare a film-like plastic substrate 2 made of ET,
On one main surface of the film-shaped plastic substrate 2, a first electrode 3 made of, for example, TiN and serving as an anode having a thickness of 10 nm is formed by reactive DC sputtering.

In this organic EL device 1, since the film-shaped plastic substrate 2 is used as the substrate, the substrate temperature cannot be increased when forming the TiN film as the anode. This is because the substrate is a film-shaped plastic substrate 2, and if the substrate temperature is increased, the substrate is melted. Therefore, in the organic EL element 1, the substrate temperature when forming the TiN film as the anode is 30 to 70 ° C.
It is necessary to set the temperature to about the room temperature.

The TiN film as an anode has a thickness of 1 × 10
^{-4 to} 2 × 10 ^-4 Ωcm, low resistivity, 50 to 80
% Of visible light average transmittance is required. In order to form a TiN film that satisfies such conditions, it is usually necessary to increase the substrate temperature.

Therefore, in order to form a TiN film having good characteristics while satisfying the above conditions, in this organic EL element 1, a TiN film is formed by reactive DC sputtering. By using reactive DC sputtering, it is possible to form a TiN film at a substrate temperature of about 30 to 70 ° C. near room temperature. In addition, by using reactive DC sputtering, it is possible to obtain a TiN film having good specific resistivity and average visible light transmittance. In the reactive DC sputtering, the input power is set to a high power of, for example, about 7 kW, so that the film forming rate can be remarkably increased, and the T
An iN film can be formed.

For example, when a TiN film having a thickness of 10 nm is formed on a film-like plastic substrate under the conditions of a power supply of 7 kW and a substrate temperature of room temperature using Ar and N ₂ as sputtering gases, the specific resistivity is 2. 3 × 10 ^-4 ,
T having good characteristics of visible light average transmittance of about 70%
An iN film was obtained.

FIG. 2 is a characteristic diagram relating to the specific resistivity and the absorption coefficient of a TiN film formed on a plastic film substrate under the following conditions using reactive DC sputtering.

Film formation conditions Input power: 4 kW Sputtering gas: Ar + N ₂ (N ₂ ratio: 10 to 90)
(% By volume) Sputtering gas pressure: 2 mTorr Sputtering target: TiN target Substrate temperature: about 70 ° C. Film thickness: 10 nm From FIG. 2, for example, the mixing ratio as the sputtering gas is such that the N ₂ ratio is 55.5% (N ₂ Flow rate: 25SCC
M ≒ 4.2 × 10 ⁻⁷ m ³ / sec, Ar flow rate: 20 SCC
When M ≒ 3.3 × 10 ⁻⁷ m ³ / sec), the specific resistivity is 2.
The absorption coefficient of visible light having a wavelength of 2 × 10 ⁻⁴ Ωcm and a wavelength of 405 nm is 1.13. Also, from FIG. 2, when the mixing ratio of N ₂ gas in the sputtering gas is low, the absorption coefficient increases, the transmittance of visible light deteriorates, and when the mixing ratio of N ₂ gas in the sputtering gas is high, the specific ratio increases. It can be seen that the resistivity increases.

From these facts, in order to form a TiN film having good specific resistivity and visible light transmittance, the mixing ratio of N ₂ gas in the sputtering gas should be about 40 to 70% by volume. Is preferred.

The above conditions (the mixing ratio of N ₂ gas is 5
(5.5 wt.%) And the film thickness was changed to obtain a result as shown in Table 1.

[0055]

[Table 1]

Considering Table 1 and the fact that the visible light average transmittance at a practical level is 50%, the thickness of the TiN film is 1%.
It can be said that it is preferably set to 0 nm or less. Also, Ti
If the thickness of the N film is less than 3 nm, the TiN film does not function sufficiently as an anode. Therefore, the thickness of the TiN film is preferably 3 nm or more.

Therefore, it is preferable that the thickness of the TiN film is about 3 nm to 10 nm.

Then, an organic EL layer 9 is formed on the first electrode 3 serving as the above-mentioned anode. The organic EL layer 9 is formed by forming the hole transport layer 4, the light emitting layer 5, and the electron transport layer 6 in this order by vacuum deposition. Here, the hole transport layer 4 is formed by forming m-HTDATA, for example. The light-emitting layer 5 is formed by, for example, forming α-NPD. And the electron transport layer 6
For example, it is formed by depositing AlQ ₃ . The thickness of the organic EL layer 9 is, for example, 150 nm.

Next, on the organic EL layer 9 formed as described above, for example, an AlTi film having a thickness of 100 nm is formed as a second electrode 7 serving as a cathode by sputtering.

Finally, a 1000 nm-thick protective layer 8 made of, for example, SiN is formed by sputtering so as to cover the layers formed above.

Specifically, for example, an organic EL device as shown in FIG. 3 can be manufactured as follows. FIG.
Is an example of another configuration to which the present invention is applied.

First, 30 mm × 36 mm, 12 sets of R,
5 to make a simple matrix of G and B stripes
A TiN transparent electrode having a thickness of about 10 nm was formed as an anode 13 on a 3 mm × 53 mm film-shaped plastic substrate 12 by reactive DC sputtering with a width of 1.15 mm and an interval of 0.1 mm.
36 are formed at 1 mm, and an insulating layer 14 of SiO ₂ is formed on the column side by vacuum evaporation at a width of 0.5 mm and an interval of 1.0 mm. Therefore, the light emitting area of one cell for manufacturing an organic EL element is 1.0 mm × 1.15 mm,
The aperture ratio is 60.8%.

Next, the TiN was formed on the TiN transparent electrode by using a mask having an opening of 40.0 mm × 48.0 mm.
4 as a hole transport layer 15a, m-MTDATA (4, 4 ′, 4 ″ -tris (3-me
Thylphenylphenylamino) triphenylamino) is deposited to a thickness of 30 nm under vacuum by a vacuum deposition method at a deposition rate of 0.2 to 0.4 nm / sec.

Next, on this hole transporting layer 15a, as a hole transporting light emitting layer 15b, α-NPD whose structural formula is shown in FIG.
(Α-naphtylphenyldiamine) at a deposition rate of 0.2 to
50nm under vacuum by vacuum deposition at 0.4nm / sec
To form the hole transport layer 15 having a two-layer structure having a light emitting property.

Next, on this hole transport layer 15, a stripe-shaped opening having a shape of 1.16 mm × 49 mm was formed.
The phenanthroline derivative represented by the structural formula in FIG. 6, for example, vasocuproine (2, 9) represented by the structural formula in FIG. −dimeth
y-4,7-diphenyl-1,10-phenanthroline) as a hole blocking layer 16 on a TiN transparent electrode to a thickness of 20 nm under vacuum at a deposition rate of 0.2 to 0.4 nm / sec by a vacuum deposition method. Evaporate.

Next, the shape on the hole transport layer 15 is 1.16.
The mask was replaced with a mask having 12 stripe-shaped openings measuring 12 mm × 49 mm, and a stripe pattern of 1.15 mm × 48.0 mm, which is a light emitting region of the anode, was formed on the TiN transparent electrode. BCN is used as the electron-transporting red light-emitting material layer 17 at a deposition rate of 0.2 to 0.4 nm.
Vacuum is deposited to a thickness of 20 nm under vacuum by a vacuum deposition method at / sec.

Thereafter, the shape of the mask opening is 40.0 m.
After replacing the mask with a mask of mx 48.0 mm, the electron transporting layer or the electron transporting luminescent material layer 18 was made of Al having the structural formula shown in FIG.
deposited to a thickness of 40nm in vacuum by _{q 3 (8-hydroxy quinoline aluminum} ) vacuum deposition method at a deposition rate of 0.2 to 0.4 nm / sec to.

Next, the area of the opening is 1.16 mm × 49.
mm mask, and Al—Li 19
a (aluminum-lithium alloy: Li concentration about 1 mol
%) To a thickness of about 0.5 nm, and Al19b to about 2 nm.
The organic EL element 11 corresponding to R, G, and B as shown in FIG. 3 can be manufactured by vapor deposition to a thickness of 00 nm by a vacuum vapor deposition method.

In the organic EL device 11, a DC voltage is selectively applied between the anode 13 and the cathode 19, so that holes injected from the anode 13 pass through the hole transport layer 15 and pass through the cathode 19. The electrons injected from the electron transport layer 18
, And reach the light emitting layers 15b, 17 and 18, respectively. As a result, in the light emitting layers 15b, 17, and 18, recombination of electrons and holes occurs, and light emission of a predetermined wavelength is generated therefrom. That is, blue light emission is obtained in a light emitting region having bathocuproine functioning as the hole blocking layer 16. Also, the luminescent site without bathocuproin
Green light emission, which is light emission from Alq ₃ which is an electron transporting light emitting material, is obtained. Then, red light emission can be obtained from the stripe portion where BSB-BCN is deposited between α-NPD and Alq ₃ .

[0070]

As described above in detail, the organic electroluminescent device according to the present invention (hereinafter referred to as "organic electroluminescent device").
It is called an L element. ) Includes, in this order, a first electrode, an organic electroluminescence layer (hereinafter, referred to as an organic EL layer) having a light emitting material made of an organic compound, and a second electrode on a substrate. A film-shaped plastic substrate, wherein the first electrode is a light-transmitting electrode made of a nitride.

Therefore, since the organic EL device according to the present invention uses a film-shaped plastic substrate, it can be significantly reduced in weight as compared with a conventional organic EL device using a glass substrate.

The organic EL device according to the present invention has good flexibility because it uses a film-like plastic substrate which is a substrate having flexibility.

Since the organic EL device according to the present invention uses a film-shaped plastic substrate having excellent impact resistance against impacts such as dropping, the impact resistance can be greatly improved.

Further, in this organic EL device, since nitride is used as the anode material, oxygen and indium in the anode material do not penetrate or diffuse into the organic EL layer. That is, the organic EL layer does not deteriorate due to the penetration or diffusion of oxygen or indium in the anode material into the organic EL layer.

Therefore, according to the present invention, it is possible to provide an organic EL element which is lightweight, has flexibility, impact resistance, prevents deterioration of the organic EL layer, and has excellent durability. .

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing one configuration example of an organic EL device to which the present invention is applied.

FIG. 2 is a characteristic diagram relating to a specific resistivity and an absorption coefficient of a TiN film.

FIG. 3 is a longitudinal sectional view showing another configuration example of the organic EL element to which the present invention is applied.

FIG. 4 is a diagram showing a structural formula of m-MTDATA.

FIG. 5 is a diagram showing a structural formula of α-NPD.

FIG. 6 shows a structural formula of a phenanthroline derivative.

FIG. 7 shows the structural formula of bathocuproin.

FIG. 8 is a diagram showing a structural formula of BSB-BCN.

FIG. 9 is a diagram showing a structural formula of Alq ₃ .

[Explanation of symbols]

1 organic EL element, 2 film-shaped plastic substrate,
Reference Signs List 3 anode, 4 hole transport layer, 5 light emitting layer, 6 electron transport layer, 7 cathode, 8 protective layer, 9 organic EL layer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05B 33/14 H05B 33/14 A 33/28 33/28

Claims (2)

[Claims] 1. A substrate comprising a first electrode, an organic electroluminescent layer having a light emitting material made of an organic compound, and a second electrode in this order, wherein the substrate is a film-shaped plastic substrate, An organic electroluminescence element, wherein the first electrode is a light-transmitting electrode made of a nitride. 2. The organic electroluminescence device according to claim 1, wherein said nitride is TiN.