KR20200139800A - Cd-sem을 사용한 프로세스 시뮬레이션 모델 캘리브레이션 - Google Patents
Cd-sem을 사용한 프로세스 시뮬레이션 모델 캘리브레이션 Download PDFInfo
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- KR20200139800A KR20200139800A KR1020207032077A KR20207032077A KR20200139800A KR 20200139800 A KR20200139800 A KR 20200139800A KR 1020207032077 A KR1020207032077 A KR 1020207032077A KR 20207032077 A KR20207032077 A KR 20207032077A KR 20200139800 A KR20200139800 A KR 20200139800A
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- 238000000034 method Methods 0.000 title claims abstract description 836
- 230000008569 process Effects 0.000 title claims abstract description 632
- 238000004088 simulation Methods 0.000 title claims abstract description 261
- 239000004065 semiconductor Substances 0.000 claims abstract description 222
- 238000004519 manufacturing process Methods 0.000 claims abstract description 204
- 238000006243 chemical reaction Methods 0.000 claims abstract description 81
- 238000005259 measurement Methods 0.000 claims abstract description 74
- 230000003287 optical effect Effects 0.000 claims abstract description 46
- 238000004626 scanning electron microscopy Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 179
- 238000005530 etching Methods 0.000 claims description 58
- 238000012545 processing Methods 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 35
- 238000001228 spectrum Methods 0.000 claims description 34
- 238000013461 design Methods 0.000 claims description 27
- 238000013386 optimize process Methods 0.000 claims description 23
- 238000004364 calculation method Methods 0.000 claims description 22
- 238000005389 semiconductor device fabrication Methods 0.000 claims description 22
- 238000004590 computer program Methods 0.000 claims description 20
- 230000005670 electromagnetic radiation Effects 0.000 claims description 19
- 238000012360 testing method Methods 0.000 claims description 16
- 238000004627 transmission electron microscopy Methods 0.000 claims description 14
- 230000001066 destructive effect Effects 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 13
- 239000000376 reactant Substances 0.000 claims description 12
- 239000006185 dispersion Substances 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- 238000004458 analytical method Methods 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 8
- 230000003993 interaction Effects 0.000 claims description 8
- 238000002310 reflectometry Methods 0.000 claims description 8
- 230000003750 conditioning effect Effects 0.000 claims description 6
- 238000000572 ellipsometry Methods 0.000 claims description 6
- 230000036961 partial effect Effects 0.000 claims description 6
- 230000010287 polarization Effects 0.000 claims description 6
- 206010024769 Local reaction Diseases 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 238000005137 deposition process Methods 0.000 claims description 5
- 238000000386 microscopy Methods 0.000 claims description 5
- 238000000235 small-angle X-ray scattering Methods 0.000 claims description 5
- 230000001131 transforming effect Effects 0.000 claims description 3
- 238000012625 in-situ measurement Methods 0.000 claims description 2
- 238000001878 scanning electron micrograph Methods 0.000 claims 2
- 238000005457 optimization Methods 0.000 abstract description 111
- 238000001350 scanning transmission electron microscopy Methods 0.000 abstract 1
- 230000006870 function Effects 0.000 description 44
- 239000010410 layer Substances 0.000 description 25
- 235000012431 wafers Nutrition 0.000 description 23
- 238000002474 experimental method Methods 0.000 description 19
- 150000002500 ions Chemical class 0.000 description 18
- 230000004044 response Effects 0.000 description 17
- 239000000047 product Substances 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 230000004907 flux Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000011065 in-situ storage Methods 0.000 description 8
- 230000003542 behavioural effect Effects 0.000 description 7
- 238000004422 calculation algorithm Methods 0.000 description 6
- 230000000875 corresponding effect Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000007689 inspection Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000012512 characterization method Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 241000894007 species Species 0.000 description 4
- 230000036962 time dependent Effects 0.000 description 4
- 238000000333 X-ray scattering Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000013400 design of experiment Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000000513 principal component analysis Methods 0.000 description 3
- 238000004886 process control Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- 238000012549 training Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000010801 machine learning Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002085 persistent effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000011112 process operation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005520 electrodynamics Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000008247 solid mixture Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000010977 unit operation Methods 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
- G06F30/27—Design optimisation, verification or simulation using machine learning, e.g. artificial intelligence, neural networks, support vector machines [SVM] or training a model
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
- G06F2119/18—Manufacturability analysis or optimisation for manufacturability
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Geometry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Artificial Intelligence (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Medical Informatics (AREA)
- Software Systems (AREA)
- Drying Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/946,940 | 2018-04-06 | ||
US15/946,940 US10572697B2 (en) | 2018-04-06 | 2018-04-06 | Method of etch model calibration using optical scatterometry |
US201862656299P | 2018-04-11 | 2018-04-11 | |
US62/656,299 | 2018-04-11 | ||
PCT/US2019/025668 WO2019195481A1 (en) | 2018-04-06 | 2019-04-03 | Process simulation model calibration using cd-sem |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20200139800A true KR20200139800A (ko) | 2020-12-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020207032077A KR20200139800A (ko) | 2018-04-06 | 2019-04-03 | Cd-sem을 사용한 프로세스 시뮬레이션 모델 캘리브레이션 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR20200139800A (zh) |
CN (1) | CN112136135A (zh) |
WO (1) | WO2019195481A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022231837A1 (en) * | 2021-04-30 | 2022-11-03 | Kla Corporation | High resolution profile measurement based on a trained parameter conditioned measurement model |
WO2023039186A1 (en) * | 2021-09-10 | 2023-03-16 | Fractilia, Llc | Detection of probabilistic process windows |
WO2023204344A1 (ko) * | 2022-04-19 | 2023-10-26 | 한국핵융합에너지연구원 | 플라즈마 시뮬레이션 방법 및 시스템 |
US11996265B2 (en) | 2017-04-13 | 2024-05-28 | Fractilla, LLC | System and method for generating and analyzing roughness measurements and their use for process monitoring and control |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW202240734A (zh) * | 2020-12-15 | 2022-10-16 | 美商蘭姆研究公司 | 多步驟半導體製造程序中的機器學習 |
CN113051863B (zh) * | 2021-03-12 | 2023-02-24 | 广东省大湾区集成电路与系统应用研究院 | 半导体建模方法、装置、存储介质及计算机设备 |
CN113471093B (zh) * | 2021-06-08 | 2024-06-04 | 广东省大湾区集成电路与系统应用研究院 | 一种用于半导体器件的薄膜形貌预测方法及装置 |
CN114036649B (zh) * | 2021-12-15 | 2024-08-09 | 成都飞机工业(集团)有限责任公司 | 一种无人机数学模型校对方法、装置、设备及存储介质 |
US20230367302A1 (en) * | 2022-05-11 | 2023-11-16 | Applied Materials, Inc. | Holistic analysis of multidimensional sensor data for substrate processing equipment |
CN116129427A (zh) * | 2022-12-22 | 2023-05-16 | 东方晶源微电子科技(北京)有限公司 | 基于设计版图的扫描电子显微镜图像轮廓提取方法、装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7171284B2 (en) * | 2004-09-21 | 2007-01-30 | Timbre Technologies, Inc. | Optical metrology model optimization based on goals |
US7525673B2 (en) * | 2006-07-10 | 2009-04-28 | Tokyo Electron Limited | Optimizing selected variables of an optical metrology system |
CN101840451B (zh) * | 2010-04-21 | 2014-05-28 | 云南大学 | 一种集成电路工艺参数模型的优化方法 |
WO2011158239A1 (en) * | 2010-06-17 | 2011-12-22 | Nova Measuring Instruments Ltd. | Method and system for optimizing optical inspection of patterned structures |
US8666703B2 (en) * | 2010-07-22 | 2014-03-04 | Tokyo Electron Limited | Method for automated determination of an optimally parameterized scatterometry model |
US9412673B2 (en) * | 2013-08-23 | 2016-08-09 | Kla-Tencor Corporation | Multi-model metrology |
US9792393B2 (en) * | 2016-02-08 | 2017-10-17 | Lam Research Corporation | Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization |
CN107633103A (zh) * | 2016-07-15 | 2018-01-26 | 中国科学院微电子研究所 | 一种cmp模型参数优化方法和装置 |
CN106874616B (zh) * | 2017-03-06 | 2021-04-20 | 北京经纬恒润科技股份有限公司 | 一种参数优化调整方法及系统 |
-
2019
- 2019-04-03 WO PCT/US2019/025668 patent/WO2019195481A1/en active Application Filing
- 2019-04-03 KR KR1020207032077A patent/KR20200139800A/ko not_active Application Discontinuation
- 2019-04-03 CN CN201980033624.4A patent/CN112136135A/zh active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11996265B2 (en) | 2017-04-13 | 2024-05-28 | Fractilla, LLC | System and method for generating and analyzing roughness measurements and their use for process monitoring and control |
WO2022231837A1 (en) * | 2021-04-30 | 2022-11-03 | Kla Corporation | High resolution profile measurement based on a trained parameter conditioned measurement model |
WO2023039186A1 (en) * | 2021-09-10 | 2023-03-16 | Fractilia, Llc | Detection of probabilistic process windows |
WO2023204344A1 (ko) * | 2022-04-19 | 2023-10-26 | 한국핵융합에너지연구원 | 플라즈마 시뮬레이션 방법 및 시스템 |
KR20230149059A (ko) * | 2022-04-19 | 2023-10-26 | 한국핵융합에너지연구원 | 플라즈마 시뮬레이션 방법 및 시스템 |
Also Published As
Publication number | Publication date |
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TW201945967A (zh) | 2019-12-01 |
CN112136135A (zh) | 2020-12-25 |
WO2019195481A1 (en) | 2019-10-10 |
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