KR20200079576A - 프로세스 키트 쉴드 및 그를 갖는 물리 기상 증착 챔버 - Google Patents

프로세스 키트 쉴드 및 그를 갖는 물리 기상 증착 챔버 Download PDF

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Publication number
KR20200079576A
KR20200079576A KR1020207018767A KR20207018767A KR20200079576A KR 20200079576 A KR20200079576 A KR 20200079576A KR 1020207018767 A KR1020207018767 A KR 1020207018767A KR 20207018767 A KR20207018767 A KR 20207018767A KR 20200079576 A KR20200079576 A KR 20200079576A
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KR
South Korea
Prior art keywords
substrate
process kit
etch stop
kit shield
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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KR1020207018767A
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English (en)
Korean (ko)
Inventor
무함마드 엠. 라쉬드
아돌프 밀러 알렌
지안퀴 왕
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20200079576A publication Critical patent/KR20200079576A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020207018767A 2012-04-24 2013-04-18 프로세스 키트 쉴드 및 그를 갖는 물리 기상 증착 챔버 Ceased KR20200079576A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261637606P 2012-04-24 2012-04-24
US61/637,606 2012-04-24
US13/860,578 2013-04-11
US13/860,578 US20130277203A1 (en) 2012-04-24 2013-04-11 Process kit shield and physical vapor deposition chamber having same
PCT/US2013/037101 WO2013162992A1 (en) 2012-04-24 2013-04-18 Process kit shield and physical vapor deposition chamber having same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020147032961A Division KR20150013594A (ko) 2012-04-24 2013-04-18 프로세스 키트 쉴드 및 그를 갖는 물리 기상 증착 챔버

Publications (1)

Publication Number Publication Date
KR20200079576A true KR20200079576A (ko) 2020-07-03

Family

ID=49379103

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020207018767A Ceased KR20200079576A (ko) 2012-04-24 2013-04-18 프로세스 키트 쉴드 및 그를 갖는 물리 기상 증착 챔버
KR1020147032961A Ceased KR20150013594A (ko) 2012-04-24 2013-04-18 프로세스 키트 쉴드 및 그를 갖는 물리 기상 증착 챔버

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020147032961A Ceased KR20150013594A (ko) 2012-04-24 2013-04-18 프로세스 키트 쉴드 및 그를 갖는 물리 기상 증착 챔버

Country Status (6)

Country Link
US (2) US20130277203A1 (https=)
JP (1) JP6238963B2 (https=)
KR (2) KR20200079576A (https=)
CN (1) CN104246004B (https=)
TW (1) TWI616552B (https=)
WO (1) WO2013162992A1 (https=)

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US20130136864A1 (en) * 2011-11-28 2013-05-30 United Technologies Corporation Passive termperature control of hpc rotor coating
JP5860063B2 (ja) * 2011-12-22 2016-02-16 キヤノンアネルバ株式会社 基板処理装置
CN105097401B (zh) * 2014-05-13 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种反应腔室及半导体加工设备
CN105779932B (zh) * 2014-12-26 2018-08-24 北京北方华创微电子装备有限公司 用于处理腔室的工艺内衬和物理气相沉积设备
US10546733B2 (en) 2014-12-31 2020-01-28 Applied Materials, Inc. One-piece process kit shield
US10100399B2 (en) * 2015-03-31 2018-10-16 Ulvac, Inc. Cathode assembly
US10103012B2 (en) 2015-09-11 2018-10-16 Applied Materials, Inc. One-piece process kit shield for reducing the impact of an electric field near the substrate
US9953812B2 (en) 2015-10-06 2018-04-24 Applied Materials, Inc. Integrated process kit for a substrate processing chamber
SG11201804420UA (en) * 2015-11-24 2018-06-28 Applied Materials Inc Pre-coated shield for use in vhf-rf pvd chambers
CN108292588B (zh) * 2015-12-04 2022-02-18 应用材料公司 用以防止hdp-cvd腔室电弧放电的先进涂层方法及材料
US11017984B2 (en) * 2016-04-28 2021-05-25 Applied Materials, Inc. Ceramic coated quartz lid for processing chamber
US9773665B1 (en) * 2016-12-06 2017-09-26 Applied Materials, Inc. Particle reduction in a physical vapor deposition chamber
US10998172B2 (en) * 2017-09-22 2021-05-04 Applied Materials, Inc. Substrate processing chamber having improved process volume sealing
JP7001448B2 (ja) * 2017-12-05 2022-01-19 東京エレクトロン株式会社 Ｐｖｄ処理方法およびｐｖｄ処理装置
CN111602235B (zh) * 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
US10818839B2 (en) 2018-03-15 2020-10-27 Samsung Electronics Co., Ltd. Apparatus for and method of fabricating semiconductor devices
US11584985B2 (en) * 2018-08-13 2023-02-21 Honeywell International Inc. Sputter trap having a thin high purity coating layer and method of making the same
CN113412341B (zh) * 2019-02-11 2024-11-01 应用材料公司 在脉冲式pvd中通过等离子体改性从晶片移除颗粒的方法
US11289312B2 (en) 2019-06-12 2022-03-29 Applied Materials, Inc. Physical vapor deposition (PVD) chamber with in situ chamber cleaning capability
KR102755075B1 (ko) * 2019-11-15 2025-01-14 캐논 톡키 가부시키가이샤 성막장치
KR102755070B1 (ko) * 2019-11-20 2025-01-14 캐논 톡키 가부시키가이샤 성막장치
CN114107931B (zh) * 2021-11-19 2023-10-13 北京北方华创微电子装备有限公司 半导体腔室
US12195843B2 (en) * 2023-01-19 2025-01-14 Applied Materials, Inc. Multicathode PVD system for high aspect ratio barrier seed deposition

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Also Published As

Publication number Publication date
WO2013162992A1 (en) 2013-10-31
CN104246004B (zh) 2017-05-03
TW201346055A (zh) 2013-11-16
CN104246004A (zh) 2014-12-24
TWI616552B (zh) 2018-03-01
US20130277203A1 (en) 2013-10-24
JP6238963B2 (ja) 2017-11-29
JP2015515551A (ja) 2015-05-28
KR20150013594A (ko) 2015-02-05
US20170088942A1 (en) 2017-03-30

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