KR20190120534A - Light emitting device - Google Patents

Abstract

According to an embodiment of the present invention, disclosed are a light emitting device and a method for manufacturing the same. The light emitting device of the present invention comprises: a substrate; a light emitting structure including a first conductive semiconductor layer on the substrate, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first and second conductive semiconductor layers; a first electrode on the first conductive semiconductor layer; a second electrode on the second conductive semiconductor layer; a passivation layer for surrounding side and upper surfaces of the light emitting structure; and an aluminum hydroxide layer disposed on the passivation layer. The aluminum hydroxide layer has a flake shape. In addition, the light emitting device of the present invention comprises: a substrate; a light emitting structure including a first conductive semiconductor layer on the substrate, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first and second conductive semiconductor layers; a first electrode on the first conductive semiconductor layer; a second electrode on the second conductive semiconductor layer; a first passivation layer for surrounding side and upper surfaces of the light emitting structure; and a second passivation layer disposed on the first passivation layer. The first passivation layer may include Al_2O_3, and the second passivation layer may include AlOOH.

Description

Light emitting element {LIGHT EMITTING DEVICE}

The embodiment relates to a light emitting device and a method of manufacturing the same.

A semiconductor device including a compound such as GaN, AlGaN, etc. has many advantages, such as having a wide and easy-to-adjust band gap energy, and can be used in various ways as a light emitting device, a light receiving device, and various diodes.

Particularly, light emitting devices such as light emitting diodes and laser diodes using semiconductors of Group 3-5 or Group 2-6 compound semiconductors have been developed through the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet light can be realized, and efficient white light can be realized by using fluorescent materials or combining colors.Low power consumption, semi-permanent lifespan, and fast response speed compared to conventional light sources such as fluorescent and incandescent lamps can be realized. It has the advantages of safety, environmental friendliness.

In addition, when a light-receiving device such as a photodetector or a solar cell is also manufactured using a group 3-5 or 2-6 compound semiconductor material of a semiconductor, the development of device materials absorbs light in various wavelength ranges to generate a photocurrent. As a result, light in various wavelengths can be used from gamma rays to radio wavelengths. It also has the advantages of fast response speed, safety, environmental friendliness and easy control of device materials, making it easy to use in power control or microwave circuits or communication modules.

Therefore, the semiconductor device may replace a light emitting diode backlight, a fluorescent lamp, or an incandescent bulb which replaces a cold cathode tube (CCFL) constituting a backlight module of an optical communication means, a backlight of a liquid crystal display (LCD) display device. Applications are expanding to include white LED lighting devices, automotive headlights and traffic lights, and sensors that detect gas or fire. In addition, the semiconductor device may be extended to high frequency application circuits, other power control devices, and communication modules.

The light emitting device may be provided as a pn junction diode having a characteristic in which electrical energy is converted into light energy using, for example, a group 3-5 element or a group 2-6 element on the periodic table. Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors are receiving great attention in the field of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. In particular, a blue light emitting device, a green light emitting device, an ultraviolet light emitting device, a red light emitting device using a nitride semiconductor, and the like are commercially used and widely used.

For example, in the case of an ultraviolet light emitting device, a light emitting diode which emits light distributed in a wavelength range of 200 nm to 400 nm, and is used in the wavelength band, for short wavelengths, for sterilization and purification, and for long wavelengths, an exposure machine or a curing machine. Can be used.

 Ultraviolet rays can be classified into UV-A (315nm ~ 400nm), UV-B (280nm ~ 315nm), and UV-C (200nm ~ 280nm) in order of long wavelength. The UV-A (315nm ~ 400nm) area is applied to various fields such as industrial UV curing, printing ink curing, exposure machine, forgery discrimination, photocatalyst sterilization, special lighting (aquarium / agriculture, etc.), and UV-B (280nm ~ 315nm). ) Area is used for medical purposes, UV-C (200nm ~ 280nm) area is applied to air purification, water purification, sterilization products.

In general, a passivation layer may be formed to protect the surface of the light emitting device used in the light emitting device from electrical short and the like and to prevent leakage current. At this time, in order to protect the surface of the light emitting device, the passivation layer may be formed on the entire surface of the light emitting device, or may be formed on at least part of the surface. However, due to the difference in refractive index of the passivation layer formed to protect the surface of the light emitting device or low transmittance, light emitted from the light emitting device may be totally reflected inside the passivation layer. Therefore, a part of the light emitted from the light emitting device is not emitted to the top due to total internal reflection of the passivation layer has a problem that the light extraction efficiency of the light emitting device is reduced.

The light emitting device according to the embodiment is to prevent the light extraction efficiency of the light emitting device is lowered due to total internal reflection of the passivation layer as a technical problem.

The light emitting device according to the embodiment is to provide a light emitting device with improved light extraction efficiency.

The light emitting device according to the embodiment is provided with an aluminum hydroxide layer having improved transmittance to provide a light emitting device having improved light extraction efficiency.

The light emitting device according to the embodiment includes a substrate; A first conductive semiconductor layer on the substrate, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Light emitting structure; A first electrode on the first conductive semiconductor layer; A second electrode on the second conductive semiconductor layer; A passivation layer surrounding side and top surfaces of the light emitting structure; And an aluminum hydroxide layer disposed on the passivation layer, wherein the aluminum hydroxide layer may have a flake shape.

According to an embodiment, the aluminum hydroxide layer may include a light emitting device including AlOOH.

According to an embodiment, the aluminum hydroxide layer may include a light emitting device having a higher transmittance than the passivation layer.

The embodiment may include a light emitting device having a highest transmittance of the aluminum hydroxide layer when the light emitted from the active layer is UV.

According to an embodiment, the aluminum hydroxide layer may include a light emitting device that is thinner than the thickness of the passivation layer.

In example embodiments, the first electrode and the second electrode may include a light emitting device passing through the passivation layer and the aluminum hydroxide layer.

The light emitting device according to the embodiment includes a substrate; A first conductive semiconductor layer on the substrate, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Light emitting structure; A first electrode on the first conductive semiconductor layer; A second electrode on the second conductive semiconductor layer; A first passivation layer surrounding side and top surfaces of the light emitting structure; And a second passivation layer disposed on the first passivation layer, wherein the first passivation layer includes Al ₂ O ₃ , and the second passivation layer may include AlOOH.

The embodiment may include a light emitting device in which the Al content of the first passivation layer and the second passivation layer is different from each other.

In the light emitting device according to the embodiment, the transmittance of the aluminum hydroxide layer may be improved by a flake shape formed on the surface of the aluminum hydroxide layer.

The light emitting device according to the embodiment can improve the light extraction efficiency emitted to the upper light emitting device by the aluminum hydroxide layer.

The light emitting device according to the embodiment can improve the light extraction efficiency of the ultraviolet wavelength.

1 is a cross-sectional view of a light emitting device according to the first embodiment.
2 is a SEM photograph of the surface of the aluminum hydroxide layer in the light emitting device according to the first embodiment.
3 is a view showing the transmittance of the aluminum hydroxide layer in the light emitting device according to the first embodiment.
4 is a view showing the light extraction efficiency of the aluminum hydroxide layer in the light emitting device according to the first embodiment.
5 is a table showing the transmittance of an aluminum hydroxide layer in the light emitting device according to the first embodiment.
6 to 10 are sectional views showing the manufacturing process of the light emitting device according to the first embodiment.
11 is a cross-sectional view of a light emitting device according to the second embodiment.

Hereinafter, embodiments will be described with reference to the accompanying drawings. In the description of an embodiment, each layer, region, pattern, or structure is “on / over” or “under” the substrate, each layer, layer, pad, or pattern. In the case where it is described as being formed at, "on / over" and "under" include both "directly" or "indirectly" formed. do. In addition, the criteria for the top / top or bottom of each layer will be described based on the drawings, but the embodiment is not limited thereto.

As shown in FIG. 1, the light emitting device according to the first embodiment includes a substrate 100, a light emitting structure 110, a first electrode 131, a second electrode 132, a passivation layer 120, and aluminum hydroxide. It may include any one of the layers 140. The light emitting structure 110 may include a first conductive semiconductor layer 113, an active layer 115, and a second conductive semiconductor layer 117.

The substrate 100 may be formed of a material having excellent thermal conductivity. The substrate 100 may be a conductive substrate or an insulating substrate. For example, the substrate 100 may include sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, Ga ₂ 0 ₃ At least one of may be used. An uneven structure may be formed on the substrate 100, but is not limited thereto.

The light emitting structure 110 may be disposed on the substrate 100. As described above, the light emitting structure 100 may include a first conductive semiconductor layer 113, an active layer 115, and a second conductive semiconductor layer 117.

Accordingly, the first conductive semiconductor layer 113 may be disposed on the substrate 110. Wherein the first conductivity type semiconductor layer 113 is _{In x Al y Ga 1 -x- y} P (0≤≤x≤≤1, 0≤≤y≤≤1, 0≤≤x + y≤≤1) It may include a semiconductor material having a composition formula, but is not limited thereto. For example, the first conductive semiconductor layer 113 is formed of one or more of AlGaP, InGaP, AlInGaP, InP, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, and GaP. Can be.

An active layer 115 may be disposed on the first conductive semiconductor layer 113. The active layer 115 may be disposed on the substrate 100. The active layer 115 may be disposed between the first conductive semiconductor layer 113 and the second conductive semiconductor layer 117.

The active layer 115 may encounter electrons (or holes) injected through the first conductive semiconductor layer 113 and holes (or electrons) injected through the second conductive semiconductor layer 117. The active layer 115 may meet electrons and holes to emit light due to a band gap difference of an energy band according to a material forming the active layer 115. The active layer 115 may emit at least one wavelength of ultraviolet, blue, green, and red light.

The active layer 115 may optionally include a single quantum well, a multiple quantum well (MQW), a quantum wire structure, or a quantum dot structure. The active layer 115 may be formed of a compound semiconductor. For example, the active layer 115 may be implemented as at least one of a compound semiconductor of Groups 3-5 or 2-6.

The active layer 115 may include a quantum well layer and a quantum barrier layer. When the active layer 115 is implemented as a multi-quantum well structure, the quantum well layer and the quantum barrier layer may be alternately disposed. Of the quantum well layer and the quantum barrier layer is _{In x Al y Ga 1 -x- y} P (0≤≤x≤≤1, 0≤≤y≤≤1, 0≤≤x + y≤≤1) each formula Or a pair of GaInP / AlGaInP, GaP / AlGaP, InGaP / AlGaP, InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs / AlGaAs, InGaAs / AlGaAs It may be formed as a structure, but is not limited thereto. The quantum well layer may be formed of a material having a lower band gap than the quantum barrier layer.

The second conductive semiconductor layer 117 may be disposed on the active layer 115. For example, the second conductive semiconductor layer 117 may include at least one of a semiconductor compound, for example, a compound semiconductor of Group 3-5 or Group 2-6. The second conductive semiconductor layer 117 may be formed in a single layer or multiple layers. The second conductive semiconductor layer 117 may be doped with a second conductive dopant. For example, when the second conductive semiconductor layer 117 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba. For example, the second conductive semiconductor layer 117 may have In _x Al _y Ga _1-xy P (0≤≤x≤≤1, 0≤≤y≤≤1, 0≤≤x + y≤≤1). It may include, but is not limited to, a semiconductor material having a compositional formula. For example, the second conductive semiconductor layer 117 is formed of at least one of AlGaP, InGaP, AlInGaP, InP, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, and GaP. Can be.

The first electrode 131 may be disposed on the first conductive semiconductor layer 113. The first electrode 131 may pass through the passivation layer 120 on the exposed first conductive semiconductor layer 113, and the first electrode 131 may pass through the aluminum hydroxide layer 140. Can be. An upper surface of the first electrode 131 may be exposed. The first electrode 131 may be disposed in the first hole 141. The first electrode 131 may be a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. The first electrode 131 may be formed of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin-oxide (IZTO), indium-aluminum-zinc-oxide (IGAZO), or IGZO (IG). It may be a single layer or a multilayer of a transparent conductive material such as Indium-Gallium-Zinc-Oxide (IG), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO).

The second electrode 132 may be disposed on the second conductive semiconductor layer 117. The second electrode 132 may pass through the passivation layer 120, and the second electrode 132 may pass through the aluminum hydroxide layer 140. An upper surface of the second electrode 132 may be exposed. The second electrode 132 may be disposed in the second hole 142. The second electrode 132 may be a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. The second electrode 132 may be formed of the metal or the alloy and indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin-oxide (IZTO), and indium-aluminum-zinc- (AZO). Single layer of transparent conductive material such as Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), or Antimony-Tin-Oxide (ATO) It may be multilayer.

The passivation layer 120 may be disposed on the side of the light emitting structure 110. The passivation layer 120 may be disposed around the light emitting structure 110. The passivation layer 120 may surround side surfaces of the light emitting structure 110. The passivation layer 120 may be disposed on the light emitting structure 110. The passivation layer 120 may contact the top surface of the second conductive semiconductor layer 117. The passivation layer 120 may be disposed on the second conductive semiconductor layer 117. The passivation layer 120 may be disposed on the first conductive semiconductor layer 113. The passivation layer 120 may contact a portion of the first conductive semiconductor layer 113. The passivation layer 120 may be disposed around the first electrode 131. The passivation layer 120 may be disposed around the second electrode 132. The first hole 141 may pass through the passivation layer 120. The second hole 142 may pass through the passivation layer 120. The passivation layer 120 may be disposed around the first hole 141. The passivation layer 120 may surround the side surface of the first hole 141. The passivation layer 120 may be disposed around the second hole 142. The passivation layer 120 may surround the side surface of the second hole 142.

The passivation layer 120 may be formed to protect the surface of the light emitting structure 110 from electrical short and the like and to prevent leakage current. For example, the passivation layer 120 may be formed on the entire surface of the light emitting structure 110 or may be formed on at least a portion of the surface. For example, the passivation layer 120 of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ (0 ≦ ≤x, y) It may include any one.

The aluminum hydroxide layer 140 may be disposed on the passivation layer 120. The aluminum hydroxide layer 140 may contact the upper surface of the passivation layer 120. The aluminum hydroxide layer 140 may be disposed around the first electrode 131. The aluminum hydroxide layer 140 may cover side surfaces of the first electrode 131. The aluminum hydroxide layer 140 may be disposed around the second electrode 132. The aluminum hydroxide layer 140 may cover side surfaces of the second electrode 132. An upper surface of the aluminum hydroxide layer 140 may be disposed on the same plane as the upper surface of the first electrode 131. An upper surface of the aluminum hydroxide layer 140 may be disposed on the same plane as the upper surface of the first electrode 131. The first hole 141 may pass through the aluminum hydroxide layer 140. The second hole 142 may pass through the aluminum hydroxide layer 140. The first electrode 131 may be disposed in the first hole 141 of the aluminum hydroxide layer 140 and the passivation layer 120. The second electrode 132 may be disposed in the second hole 142 of the aluminum hydroxide layer 140 and the passivation layer 120. The aluminum hydroxide layer 140 may include AlOOH. The aluminum hydroxide layer 140 may include a flake shape. The aluminum hydroxide layer 140 may include a higher transmittance than the passivation layer 120. The thickness of the aluminum hydroxide layer 140 may be 100 nm to 130 nm. The refractive index of the aluminum hydroxide 140 may be 1 to 1.21.

The aluminum hydroxide layer 140 may have a higher transmittance than the passivation layer 120. Accordingly, the light emitted from the active layer 115 and passed through the passivation layer 120 and the aluminum hydroxide layer 140 and emitted to the upper portion of the light emitting device is the passivation layer 120 and the aluminum hydroxide layer 140. Since total reflection does not occur at the interface, it is possible to improve the light extraction efficiency of the light emitting device. In addition, since the aluminum hydroxide layer 140 has a flake shape, the transmittance of the aluminum hydroxide layer 140 is improved, so that the light emitted from the light emitting device to the aluminum hydroxide layer 140 is further upward. It can be emitted a lot can improve the light extraction efficiency of the light emitting device.

2 is a photograph of the surface of the aluminum hydroxide layer 140 taken with a scanning electron microscope (SEM).

As shown in FIG. 2, the surface of the aluminum hydroxide layer 140 may be formed in a flake shape. Accordingly, the angle of the light escape cone may increase due to the flake shape of the surface of the aluminum hydroxide layer 140. Accordingly, the light emitted from the aluminum hydroxide layer 140 without being totally internally reflected is increased, so that light extraction efficiency of the light emitting device may be increased.

3 is a view showing the transmittance of the aluminum hydroxide layer, Figure 4 is a view showing the light extraction efficiency of the aluminum hydroxide layer, Figure 5 is a table showing the transmittance of the aluminum hydroxide layer.

As shown in FIG. 3, it can be seen that when AlOOH is deposited on a substrate, transmittance increases at all wavelengths. In particular, it can be seen that the transmittance of the substrate on which AlOOH is deposited in the ultraviolet (UV) wavelength band, for example, 300 to 380 nm, increases rapidly.

And, as shown in Figure 4, looking in the passivation layer on the light emitting element compared to when depositing AlOOH / SiO ₂ with the passivation layer when depositing the SiO _2, it has been deposited AlOOH / SiO ₂ with a passivation layer In this case, it can be seen that the light extraction efficiency of the light emitting device increases.

And, as shown in Figure 5, when AlOOH is deposited on the substrate and AlOOH is deposited on the glass, it can be seen that the overall transmittance is improved by 4% to 5% in the wavelength range of 250nm to 650nm.

In the conventional light emitting device, a passivation layer may be formed on the surface of the light emitting device to protect the light emitting device from the outside. However, since the passivation layer has a difference in refractive index with respect to air or low transmittance, light is lost due to total internal reflection, and thus light extraction efficiency of the light emitting device may be reduced. However, in the light emitting device according to the embodiment, the aluminum hydroxide layer 140 having a high transmittance is disposed on the passivation layer 120, thereby reducing the difference in refractive index between the passivation layer 120 and the aluminum hydroxide layer 140. In addition, the extraction efficiency may be improved, and the transmittance of the ultraviolet wavelength may be improved by the aluminum hydroxide layer 140, thereby improving light extraction efficiency of the ultraviolet wavelength.

6 to 10 are views illustrating a manufacturing process of the light emitting device according to the first embodiment.

First, as shown in FIG. 6, the substrate 100 may be prepared. In addition, the light emitting structure 110 including the first conductive semiconductor layer 113, the active layer 115, and the second conductive semiconductor layer 117 may be formed on the substrate 100. For example, at least one of GaAs, sapphire (Al ₂ O ₃ ), SiC, Si, GaN, ZnO, GaP, InP, Ge, and Ga ₃ may be used as the substrate 100.

Thereafter, as shown in FIG. 7, the active layer 115 and the second conductive semiconductor layer 117 may be etched using a mask (not shown) to expose a portion of the first conductive semiconductor layer 113. In this case, the mask may be partially etched in a gas atmosphere including N, O, H, F and the like.

Thereafter, as illustrated in FIG. 8, the passivation layer 120 may be formed on the side and top of the light emitting structure 110. After the passivation layer 120 is formed on the side and top of the light emitting structure 110, the first hole 141 and the second hole 142 may be formed using a mask.

Thereafter, as shown in FIG. 9, the first electrode 131 and the second electrode 132 may be formed in the first hole 141 and the second hole 142, respectively. In this case, the first electrode 131 and the second electrode 132 may be formed higher than the upper surface of the passivation layer 120.

Subsequently, as shown in FIG. 10, after depositing aluminum (Al) on the passivation layer 120 using a mask, the Al is treated at 80-100 degrees in purified water (DI) for 1 to 10 minutes. can do. Accordingly, aluminum (Al) deposited on the passivation layer 120 may be converted to AlOOH having a flake shape.

Accordingly, the aluminum hydroxide layer 140 including the flake-shaped AlOOH having a high transmittance is formed on the passivation layer 120 to improve light extraction efficiency of the light emitting device.

In addition, when aluminum (Al) is deposited on the passivation layer 120 and then treated with purified water, aluminum hydroxide layer 140 including flake-shaped AlOOH may be formed.

In the conventional light emitting device, a passivation layer may be formed on the surface of the light emitting device to protect the light emitting device from the outside. However, since the passivation layer has a difference in refractive index with respect to air or low transmittance, light is lost due to total internal reflection, and thus light extraction efficiency of the light emitting device may be reduced. However, in the light emitting device according to the embodiment, the aluminum hydroxide layer 140 is disposed on the passivation layer 120 to reduce the difference in refractive index between the passivation layer 120 and the aluminum hydroxide layer 140 to improve the light extraction efficiency of the light emitting device. In addition, the transmittance of the ultraviolet wavelength is improved by the aluminum hydroxide layer 140, thereby improving light extraction efficiency of the ultraviolet wavelength.

11 is a sectional view of a light emitting element according to the second embodiment. The light emitting device according to the second embodiment includes a substrate 100, a first conductive semiconductor layer 113, an active layer 115, a second conductive semiconductor layer 117, a light emitting structure 110, and a first electrode 131. ), The second electrode 132, the first passivation layer 150, and the second passivation layer 160.

In the light emitting device according to the second embodiment of FIG. 11, the foregoing description may be adopted in the light emitting device according to the first embodiment shown in FIG. 1, and the main features of the second embodiment will be described below.

The first passivation layer 150 may include Al ₂ O ₃ . The second passivation layer 160 may be disposed on the first passivation layer 150. The second passivation layer 160 may include AlOOH.

The second passivation layer 160 may have a high transmittance to improve light extraction efficiency of the light emitting device.

The first passivation layer 150 and the second passivation layer 160 may be formed as follows. First, after Al ₂ O ₃ is formed on the light emitting structure, the Al ₂ O ₃ may be decomposed by water treatment to convert the surface of Al ₂ O ₃ into AlOOH. For example, Al ₂ O ₃ Decomposition by Water Treatment of Al ₂ O ₃ + H ₂ O-> 2AlOOH.

Accordingly, a first passivation layer 150 and a second passivation layer 160 may be formed on the first passivation layer 150 on the light emitting structure 110. Accordingly, the second passivation layer 160 having a high transmittance may be formed, so that light extraction efficiency of the light emitting device may be improved.

Meanwhile, the light emitting device package according to the embodiment may be applied to the light source device.

In addition, the light source device may include a display device, a lighting device, a head lamp, or the like according to an industrial field.

As an example of the light source device, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module emitting light and including a light emitting element, and a light disposed in front of the reflector and guiding light emitted from the light emitting module to the front. An optical sheet including a light guide plate, prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel; It may include a color filter disposed in front. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. In addition, the display device does not include a color filter, and may have a structure in which light emitting devices emitting red, green, and blue light are disposed.

As another example of the light source device, the head lamp may include a light emitting module including a light emitting device package disposed on a substrate, a reflector reflecting light emitted from the light emitting module in a predetermined direction, for example, a front, and reflected by the reflector. It may include a lens for refracting the light forward, and a shade for blocking or reflecting a portion of the light reflected by the reflector toward the lens to achieve a light distribution pattern desired by the designer.

Another example of a light source device may include a lighting device, a cover, a light source module, a heat sink, a power supply, an inner case, and a socket. In addition, the light source device according to the embodiment may further include any one or more of the member and the holder. The light source module may include a light emitting device package according to the embodiment.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, but are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be interpreted that the contents related to such a combination and modification are included in the scope of the embodiments.

Although the above description has been made with reference to the embodiments, these are only examples and are not intended to limit the embodiments, and those of ordinary skill in the art to which the embodiments pertain may have several examples that are not exemplified above without departing from the essential characteristics of the embodiments. It will be appreciated that eggplant modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences related to such modifications and applications will have to be construed as being included in the scope of the embodiments set out in the appended claims.

Reference Signs List 100: substrate 113: first conductive semiconductor layer 115: active layer 117: second conductive semiconductor layer
Reference Numerals 110 light emitting structure 120 passivation layer 131 first electrode 132 second electrode
140: aluminum hydroxide layer

Claims (7)

Board;
A first conductive semiconductor layer on the substrate, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Light emitting structure;
A first electrode on the first conductive semiconductor layer;
A second electrode on the second conductive semiconductor layer;
A passivation layer surrounding side and top surfaces of the light emitting structure; And
An aluminum hydroxide layer disposed on the passivation layer,
The aluminum hydroxide layer has a flake (flake) shape. The method of claim 1,
The aluminum hydroxide layer includes AlOOH. The method of claim 2,
The aluminum hydroxide layer has a higher transmittance than the passivation layer. The method of claim 2,
The transmittance of the aluminum hydroxide layer is the highest light emitting device when the light emitted from the active layer is UV. The method of claim 3,
And the first electrode and the second electrode penetrate the passivation layer and the aluminum hydroxide layer. Board;
A first conductive semiconductor layer on the substrate, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Light emitting structure;
A first electrode on the first conductive semiconductor layer;
A second electrode on the second conductive semiconductor layer;
A first passivation layer surrounding side and top surfaces of the light emitting structure; And
A second passivation layer disposed on the first passivation layer,
The first passivation layer includes Al ₂ O ₃ , The second passivation layer comprises AlOOH. The method of claim 6,
A light emitting device in which the Al content of the first passivation layer and the second passivation layer is different from each other.

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