KR20190117308A - Light emitting device package - Google Patents

Abstract

An embodiment of the present invention relates to a light emitting element package comprising: a light emitting element including a bonding pad; a fluorescent substance layer including a first fluorescent substance layer including a fluorescent material inside and arranged on an upper surface of the light emitting element and a second fluorescent substance layer arranged on a side surface of the light emitting element; and a silicon moisture movement prevention layer arranged to surround at least one surface of the fluorescent substance layer. A ratio of a width of the light emitting element to a width of the first fluorescent substance layer is 1:1.21 to 1:1.35. A ratio of a thickness of the first fluorescent substance layer to a width of the second fluorescent substance layer is 1:1 to 1:1.7.

Description

Light emitting device package {LIGHT EMITTING DEVICE PACKAGE}

The embodiment relates to a light emitting device package having a moisture resistant reinforcing structure.

A semiconductor device including a compound such as GaN, AlGaN, etc. has many advantages, such as having a wide and easy to adjust band gap energy, and can be used in various ways as a light emitting device, a light receiving device, and various diodes.

Particularly, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or 2-6 compound semiconductor materials have been developed using thin film growth technology and device materials. There is an advantage that can implement light of various wavelength bands such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3 to 5 or 2 to 6 group compound semiconductor material may implement a white light source having high efficiency by using a fluorescent material or combining colors. Such a light emitting device has advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light-receiving device such as a photodetector or a solar cell is also fabricated using a Group 3-5 Group 2 or Group 6 compound semiconductor material, development of device materials absorbs light in various wavelength ranges to generate photocurrent. As a result, light in various wavelengths can be used from gamma rays to radio wavelengths. In addition, such a light receiving device has the advantages of fast response speed, safety, environmental friendliness and easy control of the device material, so that it can be easily used in power control or microwave circuits or communication modules.

Therefore, the semiconductor device may replace a light emitting diode backlight, a fluorescent lamp, or an incandescent bulb which replaces a cold cathode tube (CCFL) constituting a backlight module of an optical communication means, a backlight of a liquid crystal display (LCD) display device. Applications are expanding to include white light emitting diode lighting devices, automotive headlights and traffic lights, and sensors that detect gas or fire. In addition, the semiconductor device may be extended to high frequency application circuits, other power control devices, and communication modules.

Among them, a light emitting device package having a chip scale package (CSP) structure has a small size and high reliability by eliminating a plastic mold surrounding the light emitting device chip and eliminating a metal wire connection process connecting the substrate and the light source.

The light emitting device package having the chip scale structure may be disposed to surround side and top surfaces of the light emitting device chip using a phosphor layer including a fluorescent material on the light emitting device chip.

Since all six surfaces of the light emitting device package are exposed, the light extraction efficiency emitted from the light emitting device package may vary considerably depending on the thickness of the phosphor layer. That is, the thickness of the phosphor layer has a significant effect on the light extraction efficiency emitted from the light emitting device package.

In addition, since the light emitting device package is exposed to all six surfaces, it is quite vulnerable to external moisture. In particular, KSF (K ₂ SiF ₆ : Min ^{4 +} )-based phosphor is used as a fluorescent material to realize high brightness of the light emitting device chip, but KSF-based phosphors are more vulnerable to moisture than other phosphors. When the KSF-based phosphor is exposed to external moisture, discoloration of the phosphor is generated, and thus, the luminous flux and color coordinates are reduced, resulting in a problem that the light efficiency of the light emitting device package is lowered.

Embodiments provide a light emitting device package for improving light extraction efficiency.

In addition, an embodiment of the present invention is to provide a light emitting device package for preventing the light efficiency is lowered by the external moisture.

The light emitting device package according to the embodiment includes a light emitting device including a bonding pad, a first phosphor layer including a fluorescent material therein and disposed on an upper surface of the light emitting device, and a second phosphor layer disposed on a side of the light emitting device. A phosphor layer, and a moisture permeation prevention layer of silicon material disposed to cover at least one surface of the phosphor layer, and a ratio of the width of the light emitting device to the width of the first phosphor layer includes 1: 1.21 to 1: 1.35. The ratio of the thickness of the first phosphor layer and the width of the second phosphor layer may include 1: 1 to 1: 1.7.

The moisture barrier layer is disposed to surround the top and side surfaces of the phosphor layer, and the thickness of the moisture barrier layer may include 50 μm to 150 μm. The moisture barrier layer is disposed to cover the lower surface of the phosphor layer, the lower surface of the light emitting device and the periphery of the bonding pad, the moisture barrier layer is smaller than the thickness of the bonding pad, and the thickness of the moisture barrier layer is 3 μm or less. can do.

The lower edge of the second phosphor layer may include a curved surface, and the moisture barrier layer may be disposed to cover the curved surface. A curved surface may be formed on the moisture barrier layer disposed in a region corresponding to the curved surface of the second phosphor layer.

A side surface of the second phosphor layer or a lower portion of the light emitting device may further include a reflective layer including TiO ₂ , and the distance between the side surface of the second phosphor layer and the reflective layer may be less than 300 μm. The moisture barrier layer may be disposed on an upper surface of the first phosphor layer or between an upper surface of the first phosphor layer and a side surface of the second phosphor layer and the reflective layer.

The moisture barrier layer may further include SiO ₂ or a diffusion agent. The fluorescent material may be disposed to surround the surface of the light emitting device. Roughness disposed on an upper surface of the first phosphor layer and a side surface of the second phosphor layer, and the roughness disposed on the side of the second phosphor layer may be irregularly disposed. The light directing angle emitted to the outside of the phosphor layer may include 145 degrees to 152 degrees.

The embodiment has the effect of preventing the penetration of moisture from the outside by forming a moisture barrier layer on the side of the phosphor layer.

In addition, the embodiment has the effect of improving the light efficiency by controlling the ratio of the thickness and width of the phosphor layer.

In addition, the embodiment has an effect that can effectively control the direction of movement of the light by forming a reflective layer on the side or the bottom of the light emitting device.

1 is a cross-sectional view showing a light emitting device package according to the embodiment.
2 and 3 are cross-sectional views showing a modification of the phosphor structure of the light emitting device package according to the embodiment.
4 is a cross-sectional view for describing a thickness of a light emitting device package according to an embodiment.
5 is a graph illustrating a distribution of relative light fluxes according to thicknesses of phosphors disposed on an upper surface of a light emitting device according to an embodiment.
6 is a graph illustrating a distribution of light directivity angles according to thicknesses of phosphors disposed on an upper surface of a light emitting device according to an embodiment.
7 is a graph showing a distribution of relative light fluxes according to widths of phosphors disposed on side surfaces of a light emitting device according to an embodiment.
8 is a graph illustrating a distribution of light directing angles according to widths of phosphors disposed on side surfaces of a light emitting device according to an embodiment.
9 is a view showing the reliability test results with time of the light emitting device package according to the embodiment.
10 to 18 are views illustrating various embodiments of a light emitting device package according to the embodiment.

Hereinafter, embodiments will be described with reference to the accompanying drawings. In the description of an embodiment, each layer, region, pattern, or structure is “on / over” or “under” the substrate, each layer, layer, pad, or pattern. In the case where it is described as being formed at, "on / over" and "under" include both "directly" or "indirectly" formed. do. In addition, the criteria for the top / top or bottom of each layer will be described based on the drawings, but the embodiment is not limited thereto.

Hereinafter, a semiconductor device package according to an exemplary embodiment will be described in detail with reference to the accompanying drawings. The semiconductor device of the device package may include a light emitting device for emitting light of ultraviolet, infrared or visible light. Hereinafter, a description will be given based on a case in which a light emitting device is applied as an example of a semiconductor device. The light emitting device may include a non-light emitting device such as a zener diode or a sensing device that monitors a wavelength or heat. Can be. Hereinafter, a description will be given based on a case in which a light emitting device is applied as an example of a semiconductor device, and the light emitting device package will be described in detail.

1 is a cross-sectional view showing a light emitting device package according to the embodiment, Figures 2 and 3 is a cross-sectional view showing a modified example of the phosphor structure of the light emitting device package according to the embodiment, Figure 4 is a view of the light emitting device package according to the embodiment 5 is a cross-sectional view for describing the thickness, FIG. 5 is a graph showing a distribution of relative luminous flux according to the thickness of the phosphor disposed on the top surface of the light emitting device according to the embodiment, and FIG. 6 is a top view of the light emitting device according to the embodiment. FIG. 7 is a graph showing the distribution of light directivity angles according to the thickness of phosphors, FIG. 7 is a graph showing the distribution of relative luminous fluxes according to the width of phosphors disposed on the side surfaces of the light emitting device according to the embodiment, 9 is a graph showing a distribution of light directivity angles according to widths of phosphors disposed on side surfaces of a light emitting device. A diagram.

Referring to FIG. 1, the light emitting device package according to the embodiment may include a light emitting device 200 disposed on a printed circuit board (PCB) 100.

The PCB substrate 100 may include an insulating or conductive material. The PCB substrate 100 may be formed of a rigid or flexible material. The PCB substrate 100 may be formed of a transparent or opaque material. The PCB substrate 100 may have electrodes of conductive patterns formed thereon. PCB substrate 100 may be designed in various ways depending on the intended use.

The light emitting device 200 may emit light of blue, green, red, white, infrared or ultraviolet light. The light emitting device 200 may have a length in the first direction equal to the length in the second direction or a length in the first direction longer than the length in the second direction. The first direction and the second direction may be perpendicular to each other.

The light emitting device 200 may be provided as a compound semiconductor. The light emitting device 200 may be provided as, for example, a group 2-6 or 3-5 compound semiconductor. For example, the light emitting device 200 includes at least two elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). Can be.

The light emitting device 200 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The first and second conductivity-type semiconductor layers may be implemented as at least one of a compound semiconductor of Groups 3-5 or 2-6. Of the first and second conductive type semiconductor layer, for example _{In x Al y Ga 1 -x- y} N (0 = x≤ = 1, 0≤ = y≤ = 1, 0≤ = x + y≤ = 1) It can be formed of a semiconductor material having a compositional formula. For example, the first and second conductivity-type semiconductor layers may include at least one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. . The first conductive semiconductor layer may be an n-type semiconductor layer doped with n-type dopants such as Si, Ge, Sn, Se, Te, or the like. The second conductive semiconductor layer may be a p-type semiconductor layer doped with p-type dopants such as Mg, Zn, Ca, Sr, and Ba.

The active layer may be implemented with a compound semiconductor. The active layer may be implemented as at least one of a compound semiconductor of Group 3-Group 5 or Group 2-6, for example. When the active layer is implemented as a multi-well structure, the active layer may include a plurality of well layers and a plurality of barrier layers that are alternately arranged, and In _x Al _y Ga _{1 -x- y} N (0 _{≦ x ≦} 1 , 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). For example, the active layer is selected from the group comprising InGaN / GaN, GaN / AlGaN, AlGaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, InP / GaAs. It may include at least one.

The bonding pads 210 may be disposed below the light emitting device 200. The bonding pad 210 may provide power to the light emitting device from the PCB substrate 100. The bonding pad 210 may include a first bonding pad 211 and a second bonding pad 212. The first bonding pads 211 and the second bonding pads 212 may be spaced apart from each other on the lower surface of the light emitting device 200. The first bonding pad 211 may be electrically connected to the first conductive semiconductor layer. The second bonding pad 212 may be electrically connected to the second conductive semiconductor layer.

The first bonding pad 211 and the second bonding pad 212 may include at least one or both of a metal material and a non-metal material. The first bonding pad 211 and the second bonding pad 212 are Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Single layer or multilayer using one or more materials or alloys selected from the group consisting of Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO It can be formed as.

A reflective layer (not shown) may be further disposed between the first bonding pad 211, the second bonding pad 212, and the light emitting device 200. The reflective layer may be made of metal or nonmetal, or may be made of a distributed bragg reflector (DBR) or an omni directional reflector (OBR).

The light emitting device package according to the embodiment may include the phosphor layer 300.

The phosphor layer 300 may be disposed to surround the light emitting device 200. The phosphor layer 300 may be disposed to surround the top and side surfaces of the light emitting device 200. The phosphor layer 300 may include a transparent material. The phosphor layer 300 may include a transparent insulating material.

The phosphor layer 300 may be made of silicon, and may be made of silicon having different chemical bonds. Silicon is a polymer in which silicon, which is an inorganic material, and carbon, which is an organic material, is combined, and has properties such as thermal stability, chemical stability, abrasion resistance, glossiness, and reactivity, solubility, elasticity, and workability, which are characteristics of the organic material. The silicon may include general silicon and fluorine silicon with an increased fluorine ratio. Increasing the fluorine ratio of fluorine silicon has the effect of improving moisture resistance.

The phosphor layer 300 may include wavelength conversion means for receiving the light emitted from the light emitting device 200 and providing the wavelength-converted light. For example, the phosphor layer 300 may include at least one selected from the group including phosphors, quantum dots, and the like. The phosphor or quantum dot may emit light of blue, green, and red.

The phosphor 310 may be evenly disposed inside the phosphor layer 300. The phosphor 310 may include a phosphor of a fluoride compound, and may include, for example, at least one of an MGF phosphor, a KSF phosphor, or a KTF phosphor. The phosphor 310 may emit light at different peak wavelengths, and the light emitted from the light emitting device 200 may emit light at different yellow and red colors or at different red peak wavelengths. One type of the phosphor 310 may include a red phosphor. The red phosphor may have a wavelength range of 610 nm to 650 nm, and the wavelength may have a half width of less than 10 nm. The red phosphor may include a fluoride phosphor. The fluorite-base phosphor, the red-based KSF _{K 2 SiF 6: Mn 4 +} , K 2 TiF 6: Mn 4+, NaYF 4: Mn 4 +, NaGdF 4: Mn 4 +, K 3 SiF 7: Mn 4 + It may include at least one of. The KSF-based fluorescent material, for example, K _a Si _{1 - c} F _b: may have a composition formula Mn ^{4 +} _c, wherein a is 1 ≤ a ≤ 2.5, wherein b is 5 ≤ b ≤ 6.5, wherein c is 0.001 ≤ c <0.1 may be satisfied. In addition, the fluorite-based red phosphor may further include an organic coating on the surface of the fluoride or Mn-containing fluoride or the surface of the fluoride coating does not contain Mn in order to improve the reliability at high temperature / high humidity. Unlike the other phosphors, the above-described fluerite-based red phosphor may implement a narrow width of 10 nm or less, and thus may be utilized in a high resolution device.

The composition of the phosphor 310 according to the embodiment basically conforms to stoichiometry, and each element may be replaced with another element in each group on the periodic table. For example, Sr may be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y may be substituted with Tb, Lu, Sc, Gd, etc. of the lanthanide series. In addition, the active agent Eu, etc. may be substituted by Ce, Tb, Pr, Er, Yb, etc. according to a desired energy level, and an active agent alone or a deactivator may be additionally applied to modify properties.

The quantum dot may include a II-VI compound or a III-V compound semiconductor, and may emit red light. The quantum dots are, for example, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, In, Sb, AlS, AlP, AlAs, PbS, PbSe, Ge, Si, CuInS ₂ , Such as CuInSe ₂ and the like, and combinations thereof.

The phosphor layer 300 may have a structure as shown in FIGS. 2 and 3.

As shown in FIG. 2, the phosphor layer 300 according to the embodiment may be formed to surround the top and side surfaces of the light emitting device 200. The phosphor layer 300 may include general silicon or fluorine silicon material. Phosphors or quantum dots may be disposed in the phosphor layer 300. The phosphor 310 may include at least one of an MGF phosphor, a KSF phosphor, or a KTF phosphor. The phosphor 310 may be evenly disposed inside the phosphor layer 300.

The first roughness 320 may be formed on the phosphor layer 300. The first roughness 320 may be regularly formed on the phosphor layer 300. The first roughness 320 may be irregularly formed on the phosphor layer 300. The first roughness 320 may improve the efficiency of light emitted from the surface of the phosphor layer 300. The first roughness 320 may be formed while the phosphor layer 300 molds the light emitting device 200.

The second roughness 330 may be formed on the side surface of the phosphor layer 300. The second roughness 300 may be irregularly formed. The second roughness 330 may improve the efficiency of light emitted from the side of the phosphor layer 300. The second roughness 330 may be formed in the process of cutting the side surface of the phosphor layer 300. The phosphor layer 300 is molded in the plurality of light emitting devices 200, and the side surfaces thereof are cut in the process of being separated into the respective light emitting devices 200. At this time, the phosphor 310 disposed on the cut surface is removed in the process of being cut, whereby roughness is generated on the side surface of the phosphor layer 300. Since the phosphors are randomly disposed in the phosphor layer, the second roughness 330 may be irregularly formed.

As shown in FIG. 3, the phosphor layer 300 according to the embodiment may be formed to surround the top and side surfaces of the light emitting device 200. The phosphor layer 300 may include general silicon or fluorine silicon material. Phosphors or quantum dots may be disposed in the phosphor layer 300. The phosphor 310 may include at least one of an MGF phosphor, a KSF phosphor, or a KTF phosphor.

The phosphor 310 may be disposed under the phosphor layer 300. The phosphor 310 may be disposed to surround the top and side surfaces of the light emitting device 200. The phosphor 310 may be disposed on the light exit surface of the light emitting device 200. The phosphor 310 may contact the top and side surfaces of the light emitting device 200. The phosphor 310 may be stacked and disposed in a structure of two or more layers on the surface of the light emitting device 200.

Roughness 320 may be further formed on the upper surface of the phosphor layer 300. Alternatively, since the phosphor 310 is not disposed on the cut surface of the phosphor layer 310, roughness may not be formed on the side surface of the phosphor layer 300.

1, the light emitting device package according to the embodiment may include a moisture barrier layer 400. The moisture barrier layer 400 may be disposed to cover at least one surface of the phosphor layer 300. The moisture barrier layer 400 may be disposed on the top and side surfaces of the phosphor layer 300.

The moisture barrier layer 400 may include a silicon material. The moisture barrier layer 400 may include silicon containing fluorine. The moisture barrier layer 400 may include silicon oxide (SiO ₂ ). Silicon oxide may improve the moisture permeability by adjusting the viscosity of the silicon. The moisture barrier layer 400 may include a light diffusing material. The light diffusing material may comprise beads. The moisture barrier layer 400 has an effect of preventing the penetration of external moisture and improving light extraction efficiency.

The moisture barrier layer 400 may be formed by stacking two or more layers. The plurality of moisture barrier layers 400 may be stacked by containing different materials, for example, fluorine, silicon oxide, and light diffusing materials. In addition, two or more materials may be mixed and stacked in a plurality of layers.

The moisture barrier layer 400 may include 50 μm to 150 μm. If the moisture barrier layer 400 is less than 50 μm, external moisture penetration efficiency may decrease. When the thickness of the moisture barrier layer 400 exceeds 150㎛ the moisture barrier function is improved but the thermal characteristics are worse. For this reason, the thickness of the moisture barrier layer 400 is most effectively formed to 50㎛ to 150㎛.

The thickness of the moisture barrier layer 400 in contact with the upper surface of the phosphor layer 300 and the width of the moisture barrier layer 400 in contact with the side surface of the phosphor layer 300 may be different from each other. Roughness may be further formed on an upper surface of the moisture barrier layer 400 disposed on the upper surface of the phosphor layer.

As shown in FIG. 4, the phosphor layer 300 includes a first phosphor layer 300a disposed on an upper surface of the light emitting device 200 and a second phosphor layer 300b disposed on a side surface of the light emitting device 200. It may include.

The ratio of the thickness T of the first phosphor layer 300a and the width W3 of the second phosphor layer 300b may include 1: 1 to 1: 7. The ratio of the width W1 of the light emitting device 200 to the width W2 of the first phosphor layer 300a may include 1: 1.21 to 1: 1.35.

In addition, the ratio of the width W3 / 2 of the second phosphor layer 300b and the width W4 of the second moisture barrier layer 400b may include 1: 0.9 to 1: 0.3.

5 to 9, changes in luminous flux and light directivity angle according to thicknesses of the first phosphor layer 300a and the second phosphor layer 300b will be described. Here, the light emitting device 200 was tested using a width of 1400 μm, a width of 1400 μm, and a height of 250 μm.

As shown in FIG. 5, when looking at the relative luminous flux according to the thickness of the first phosphor layer 300a, it can be seen that the relative luminous flux increases as the thickness of the first phosphor layer 300a increases. That is, it can be seen that the light flux increases as the first phosphor layer 300a becomes thicker, thereby increasing light efficiency.

As shown in FIG. 6, when looking at the light directivity angle according to the thickness of the first phosphor layer 300a, the light directivity angle increases as the thickness of the first phosphor layer 300a increases. That is, as the first phosphor layer 300a is thicker, the light directing angle is increased to increase the light efficiency.

5 and 6, it can be seen that the thickness of the first phosphor layer 300a is proportional to the luminous flux and the light directing angle.

As shown in FIG. 7, when the thickness T of the first phosphor layer 300a is 300 μm, the relative luminous flux according to the width W2 of the first phosphor layer 300a will be described. When the width W1 of 300a is 1800 μm, it can be seen that the maximum luminous flux is generated.

Here, the phenomenon that the luminous flux decreases even though the width W1 of the first phosphor layer 300a is increased is that the light generated in the light emitting device 200 is trapped inside the light instead of being transmitted to the entire area of the phosphor layer 300. This is because losses have occurred.

As shown in FIG. 8, when the thickness T of the first phosphor layer 300a is 300 μm, the light directing angle according to the width W2 of the first phosphor layer 300a is described. It can be seen that the light directing angle decreases as the width W2 of 300a increases.

As shown in FIGS. 7 and 8, when the width W2 of the first phosphor layer 300a is 1700 μm to 1900 μm, a smooth light directing angle may be obtained without a sharp decrease in the relative light flux. When the width W2 of the first phosphor layer 300a is 1700 μm, the width W3 of the second phosphor layer 300b is 300 μm to 500 μm, which is the width excluding the width W1 of the light emitting device 200. Can be.

Therefore, when the experimental values of FIGS. 5 to 8 are combined, the ratio of the thickness of the first phosphor layer 300a and the width of the second phosphor layer 300b may include 1: 1 to 1: 7. The ratio of the width of the light emitting device 200 to the width of the first phosphor layer 300a may include 1: 1.21 to 1: 1.35.

Referring to FIG. 9, the results of examining the reliability of the light emitting device package according to the embodiment show that the light efficiency of the light emitting device package according to the embodiment is discolored due to external moisture. It is confirmed that no light is generated and high light efficiency is shown.

10 to 18 are views illustrating various embodiments of a light emitting device package according to the embodiment.

As shown in FIG. 10, the light emitting device package according to the embodiment includes a light emitting device 200, a bonding pad 210 formed on one surface of the light emitting device 200, and a phosphor layer surrounding the light emitting device 200 ( 300 and the moisture barrier layer 400 surrounding the phosphor layer 300 may be included. Here, detailed description of the configuration overlapping with that of FIG. 1 is omitted.

The light emitting device 200 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The bonding pads 210 may be spaced apart from the lower surface of the light emitting device 200. The bonding pads 210 may be electrically connected to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively. The bonding pad 210 may supply external power to the light emitting device 200.

The phosphor layer 300 may include a silicon material. The phosphor layer 300 may include at least one of an MGF phosphor, a KSF phosphor, or a KTF phosphor. As the structure of the phosphor layer 300, any one of the structures of the phosphor layer of FIGS. 1 to 3 may be applied.

The phosphor layer 300 may include a first phosphor layer disposed on the light emitting device 200 and a second phosphor layer disposed on the side of the light emitting device. The ratio of the thickness of the first phosphor to the width of the second phosphor may include 1: 1 to 1: 7. The ratio of the width of the light emitting device to the width of the first phosphor may include 1: 1.21 to 1: 1.35.

The moisture barrier layer 400 may be disposed to surround the phosphor layer 300. The moisture barrier layer 400 may include silicon of a transparent material. The moisture barrier layer 400 may include fluorine, silicon oxide, and a light diffusing material therein. The moisture barrier layer 400 may be formed in multiple layers.

The moisture barrier layer 400 includes a first moisture barrier layer 400a in contact with an upper surface of the phosphor layer 300, a second moisture barrier layer 400b in contact with a side surface of the phosphor layer 300, and the phosphor layer 300. It may include a third moisture barrier layer 400c disposed on the lower surface of the.

The thickness of the first moisture barrier layer 400a may include 50 μm to 150 μm. The thickness of the second moisture barrier layer 400b may correspond to the thickness of the first moisture barrier layer 400a. The thickness of the second moisture barrier layer 400b may be different from the thickness of the first moisture barrier layer 400a.

The third moisture barrier layer 400c may be disposed to cover a lower surface of the phosphor layer 300, a lower surface of the light emitting device 200, and a periphery of the bonding pad 2100. The bottom surface of the bonding pad 210 may be exposed to the outside. The thickness T3 of the third moisture barrier layer 400c may be smaller than the thickness T2 of the bonding pad 210. The thickness T3 of the third moisture barrier layer 400c may be 3 μm or less.

The light emitting device package according to the embodiment has an effect of easily blocking moisture that may be drawn in from the lower surface of the phosphor.

As shown in FIG. 11, the light emitting device package according to the embodiment includes a light emitting device 200, a bonding pad 210 formed on one surface of the light emitting device 200, and a phosphor layer surrounding the light emitting device 200 ( 300 and the moisture barrier layer 400 surrounding the phosphor layer 300 may be included. Here, detailed description of the configuration overlapping with that of FIG. 1 is omitted.

The light emitting device 200 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The bonding pads 210 may be spaced apart from the lower surface of the light emitting device 200. The bonding pads 210 may be electrically connected to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively. The bonding pad 210 may supply external power to the light emitting device 200.

The phosphor layer 300 may include first silicon. The hardness of the first silicon may include 30 to 70. The hardness of the first silicon used in FIG. 11 may be smaller than the hardness of the silicon used in FIG. 1. The first silicon may reduce the number of cross linkers by lowering the bonding ratio of Si-C. From this, the hardness of the first silicon may be lower than that of the silicon of FIG. 1.

The phosphor layer 300 may include at least one of an MGF phosphor, a KSF phosphor, or a KTF phosphor. As the structure of the phosphor layer 300, any one of the structures of the phosphor layer of FIGS. 1 to 3 may be applied.

The phosphor layer 300 may include a first phosphor layer disposed on the light emitting device 200 and a second phosphor layer disposed on the side of the light emitting device. The ratio of the thickness of the first phosphor to the width of the second phosphor may include 1: 1 to 1: 7. The ratio of the width of the light emitting device to the width of the first phosphor may include 1: 1.21 to 1: 1.35.

A curved surface R may be formed at a lower edge of the second phosphor layer 300b. Since the second phosphor layer 300b has a low hardness, a curved surface R having a predetermined angle may be formed on the cut surface when the phosphor layer 300 is cut.

The moisture barrier layer 400 may include a silicon material. The hardness of silicon of the moisture barrier layer 400 may be different from that of silicon of the phosphor layer 300. The hardness of silicon of the moisture barrier layer 400 may be greater than that of silicon of the phosphor layer 300.

The moisture barrier layer 400 includes a first moisture barrier layer 400a in contact with an upper surface of the phosphor layer 300, a second moisture barrier layer 400b in contact with a side surface of the phosphor layer 300, and the phosphor layer 300. It may include a third moisture barrier layer 400c disposed on the lower surface of the.

The thickness of the first moisture barrier layer 400a may include 50 μm to 150 μm. The thickness of the second moisture barrier layer 400b may correspond to the thickness of the first moisture barrier layer 400a. The thickness of the second moisture barrier layer 400b may be different from the thickness of the first moisture barrier layer 400a.

Side surfaces of the second moisture barrier layer 400b may be disposed to cover the curved surface R of the second phosphor layer 300b. From this, the second moisture barrier layer 400b may be formed to cover the side surface of the second phosphor layer 300b and the lower portion of the second phosphor layer 300b.

The light emitting device package according to the embodiment has an effect of more easily protecting the phosphor layer made of silicon having low hardness.

As shown in FIG. 12, the light emitting device package according to the embodiment includes a light emitting device 200, a bonding pad 210 formed on one surface of the light emitting device 200, and a phosphor layer surrounding the light emitting device 200 ( 300 and the moisture barrier layer 400 surrounding the phosphor layer 300 may be included. Here, detailed description of the configuration overlapping with that of FIG. 1 is omitted.

The light emitting device 200 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The bonding pads 210 may be spaced apart from the lower surface of the light emitting device 200. The bonding pads 210 may be electrically connected to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively. The bonding pad 210 may supply external power to the light emitting device 200.

The phosphor layer 300 may include first silicon. The hardness of the first silicon may include 30 to 70. The hardness of the first silicon used in FIG. 12 may be smaller than the hardness of the silicon used in FIG. 1. The first silicon may reduce the number of cross linkers by lowering the bonding ratio of Si-C. From this, the hardness of the first silicon may be lower than that of the silicon of FIG. 1.

The phosphor layer 300 may include at least one of an MGF phosphor, a KSF phosphor, or a KTF phosphor. As the structure of the phosphor layer 300, any one of the structures of the phosphor layer of FIGS. 1 to 3 may be applied.

The phosphor layer 300 may include a first phosphor layer disposed on the light emitting device 200 and a second phosphor layer disposed on the side of the light emitting device. The ratio of the thickness of the first phosphor to the width of the second phosphor may include 1: 1 to 1: 7. The ratio of the width of the light emitting device to the width of the first phosphor may include 1: 1.21 to 1: 1.35.

The first curved surface R may be formed at a lower edge of the second phosphor layer 300b. Since the second phosphor layer 300b has a low hardness, a curved surface R having a predetermined angle may be formed on the cut surface when the phosphor layer 300 is cut.

The moisture barrier layer 400 may include a silicon material. The hardness of silicon of the moisture barrier layer 400 may be the same as that of silicon of the phosphor layer 300.

The moisture barrier layer 400 includes a first moisture barrier layer 400a in contact with an upper surface of the phosphor layer 300, a second moisture barrier layer 400b in contact with a side surface of the phosphor layer 300, and the phosphor layer 300. It may include a third moisture barrier layer 400c disposed on the lower surface of the.

The thickness of the first moisture barrier layer 400a may include 50 μm to 150 μm. The thickness of the second moisture barrier layer 400b may correspond to the thickness of the first moisture barrier layer 400a. The thickness of the second moisture barrier layer 400b may be different from the thickness of the first moisture barrier layer 400a.

Side surfaces of the second moisture barrier layer 400b may be disposed to cover the first curved surface R of the second phosphor layer 300b. From this, the second moisture barrier layer 400b may be formed to cover the side surface of the second phosphor layer 300b and the lower portion of the second phosphor layer 300b. A second curved surface R2 may be formed at the lower edge of the second moisture barrier layer.

The light emitting device package according to the embodiment has an effect of more easily protecting the phosphor layer made of silicon having low hardness.

As shown in FIG. 13, the light emitting device package according to the embodiment includes a light emitting device 200, a bonding pad 210 formed on one surface of the light emitting device 200, and a phosphor layer surrounding the light emitting device 200 ( 300, a moisture barrier layer 400 surrounding the upper surface of the phosphor layer 300, and a reflective layer 500 surrounding the side surface of the phosphor layer 300. Here, detailed description of the configuration overlapping with that of FIG. 1 is omitted.

The light emitting device 200 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The bonding pads 210 may be spaced apart from the lower surface of the light emitting device 200. The bonding pads 210 may be electrically connected to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively. The bonding pad 210 may supply external power to the light emitting device 200.

The phosphor layer 300 may include at least one of an MGF phosphor, a KSF phosphor, or a KTF phosphor. As the structure of the phosphor layer 300, any one of the structures of the phosphor layer of FIGS. 1 to 3 may be applied.

The phosphor layer 300 may include a first phosphor layer disposed on the light emitting device 200 and a second phosphor layer disposed on the side of the light emitting device. The ratio of the thickness of the first phosphor to the width of the second phosphor may include 1: 1 to 1: 7. The ratio of the width of the light emitting device 200 to the width of the first phosphor may include 1: 1.21 to 1: 1.35.

The moisture barrier layer 400 may include a silicon material. The moisture barrier layer 400 may contact the upper surface of the phosphor layer 300. The moisture barrier layer 400 may include 50 μm to 150 μm.

The reflective layer 500 may be disposed on the side of the phosphor layer 300. The reflective layer 500 may contact the side of the phosphor layer 300 and the side of the moisture barrier layer 400. The reflective layer 500 may be formed to surround side surfaces of the phosphor layer 300 and the moisture barrier layer 400. The reflective layer 500 serves to guide the light generated from the light emitting device 200 upward.

The reflective layer 500 may include a white material. The reflective layer 500 may include a resin material. The reflective layer 500 may include silicon, epoxy, or the like. The reflective layer 500 may include a reflective material such as TiO ₂ . In the reflective layer 500, a reflective material may be formed on a surface of the reflective layer 500 that contacts the phosphor layer 300. The width W5 of the reflective layer 500 may include 50 μm to 150 μm, but is not limited thereto.

The distance L between the reflective layer 500 and the side surface of the light emitting device 200 may be formed to be less than 300 μm. When the distance L between the reflective layer 500 and the side surface of the light emitting device 200 is formed to be 300 μm or more, light emitted from the side surface of the light emitting device 200 may not be transmitted to the surface of the reflective layer 500. This may lower the light efficiency.

The reflective layer 500 may further include a moisture barrier material for preventing moisture therein. The reflective layer 500 may reflect light upwards and at the same time prevent moisture from entering the side of the light emitting device 200.

The embodiment has an effect of easily emitting light in a desired direction by forming a reflective layer on the side of the light emitting device.

As shown in FIG. 14, in the light emitting device package according to the embodiment, the light emitting device package includes the light emitting device 200, a bonding pad 210 formed on one surface of the light emitting device 200, and the light emitting device. It may include a phosphor layer 300 surrounding the (200), a moisture permeation prevention layer 400 surrounding the upper surface of the phosphor layer 300, and a reflective layer 500 surrounding the side and bottom of the phosphor layer 300. . Here, detailed description of the configuration overlapping with that of FIG. 1 is omitted.

The light emitting device 200 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The bonding pads 210 may be spaced apart from the lower surface of the light emitting device 200. The bonding pads 210 may be electrically connected to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively. The bonding pad 210 may supply external power to the light emitting device 200.

The phosphor layer 300 may include at least one of an MGF phosphor, a KSF phosphor, or a KTF phosphor. As the structure of the phosphor layer 300, any one of the structures of the phosphor layer of FIGS. 1 to 3 may be applied.

The phosphor layer 300 may include a first phosphor layer disposed on the light emitting device 200 and a second phosphor layer disposed on the side of the light emitting device. The ratio of the thickness of the first phosphor to the width of the second phosphor may include 1: 1 to 1: 7. The ratio of the width of the light emitting device 200 to the width of the first phosphor may include 1: 1.21 to 1: 1.35.

The moisture barrier layer 400 may include a silicon material. The moisture barrier layer 400 may contact the upper surface of the phosphor layer 300. The moisture barrier layer 400 may include 50 μm to 150 μm.

The reflective layer 500 serves to guide the light generated from the light emitting device 200 upward. The reflective layer 500 may include a white material. The reflective layer 500 may include a resin material. The reflective layer 500 may include silicon, epoxy, or the like. The reflective layer 500 may include a reflective material such as TiO ₂ . In the reflective layer 500, a reflective material may be formed on a surface of the reflective layer 500 that contacts the phosphor layer 300.

The reflective layer 500 may be disposed to surround side and bottom surfaces of the phosphor layer 300. The reflective layer 500 may include a first reflective layer 500a and a second reflective layer 500b. The first reflective layer 500a may be in contact with the side of the phosphor layer 300 and the side of the moisture barrier layer 400. The second reflective layer 500b may be disposed to surround the lower portion of the phosphor layer 300, the lower portion of the light emitting device 200, and the bonding pad 210.

The thickness T3 of the second reflective layer 500b may be smaller than the thickness T2 of the bonding pad 210. The thickness T3 of the second reflective layer 500b may include 50 μm to 150 μm, but is not limited thereto. As a result, the bottom surface of the bonding pad 210 may be exposed to the outside.

The reflective layer 500 may further include a moisture barrier material for preventing moisture therein. The reflective layer 500 may reflect light upwards and at the same time prevent moisture from entering the side of the light emitting device 200.

The embodiment has an effect of easily emitting light in a desired direction by forming a reflective layer on the side of the light emitting device.

As shown in FIG. 15, the light emitting device package according to the embodiment includes a light emitting device 200, a bonding pad 210 formed on one surface of the light emitting device 200, and a phosphor layer surrounding the light emitting device 200 ( 300, a moisture barrier layer 400 surrounding the upper surface of the phosphor layer 300, and a reflective layer 500 surrounding the side surface of the phosphor layer 300. Here, detailed description of the configuration overlapping with that of FIG. 1 is omitted.

The light emitting device 200 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The bonding pads 210 may be spaced apart from the lower surface of the light emitting device 200. The bonding pads 210 may be electrically connected to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively. The bonding pad 210 may supply external power to the light emitting device 200.

The phosphor layer 300 may include first silicon. The hardness of the first silicon may include 30 to 70. The hardness of the first silicon used in FIG. 15 may be less than the hardness of the silicon used in FIG. 1. The first silicon may reduce the number of cross linkers by lowering the bonding ratio of Si-C. From this, the hardness of the first silicon may be lower than that of the silicon of FIG. 1.

The phosphor layer 300 may include at least one of an MGF phosphor, a KSF phosphor, or a KTF phosphor. As the structure of the phosphor layer 300, any one of the structures of the phosphor layer of FIGS. 1 to 3 may be applied.

The phosphor layer 300 may include a first phosphor layer disposed on the light emitting device 200 and a second phosphor layer disposed on the side of the light emitting device. The ratio of the thickness of the first phosphor to the width of the second phosphor may include 1: 1 to 1: 7. The ratio of the width of the light emitting device 200 to the width of the first phosphor may include 1: 1.21 to 1: 1.35.

The first curved surface R may be formed at a lower edge of the second phosphor layer 300b. Since the second phosphor layer 300b has a low hardness, a curved surface R having a predetermined angle may be formed on the cut surface when the phosphor layer 300 is cut.

The moisture barrier layer 400 may include a silicon material. The moisture barrier layer 400 may contact the upper surface of the phosphor layer 300. The moisture barrier layer 400 may include 50 μm to 150 μm.

The reflective layer 500 may be disposed on the side of the phosphor layer 300. The reflective layer 500 may contact the side of the phosphor layer 300 and the side of the moisture barrier layer 400. The reflective layer 500 may be formed to surround side surfaces of the moisture barrier layer 400. The reflective layer 500 may be formed to surround a portion of the side surface and the lower portion of the second phosphor layer 300b.

The reflective layer 500 serves to guide the light generated from the light emitting device 200 upward. The reflective layer 500 may include a white material. The reflective layer 500 may include a resin material. The reflective layer 500 may include silicon, epoxy, or the like. The reflective layer 500 may include a reflective material such as TiO ₂ . In the reflective layer 500, a reflective material may be formed on a surface of the reflective layer 500 that contacts the phosphor layer 300. The width of the reflective layer 500 may include 50 μm to 150 μm, but is not limited thereto.

The reflective layer 500 may further include a moisture barrier material for preventing moisture therein. The reflective layer 500 may reflect light upwards and at the same time prevent moisture from entering the side of the light emitting device 200.

The embodiment has an effect of easily emitting light in a desired direction by forming a reflective layer on the side of the light emitting device.

As shown in FIG. 16, the light emitting device package according to the embodiment includes a light emitting device 200, a bonding pad 210 formed on one surface of the light emitting device 200, and a phosphor layer surrounding the light emitting device 200. 300, a moisture barrier layer 400 surrounding the phosphor layer 300, and a reflective layer 500 surrounding the side surface of the moisture barrier layer 400. Here, detailed description of the configuration overlapping with that of FIG. 1 is omitted.

The light emitting device 200 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The bonding pads 210 may be spaced apart from the lower surface of the light emitting device 200. The bonding pads 210 may be electrically connected to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively. The bonding pad 210 may supply external power to the light emitting device 200.

The phosphor layer 300 may include at least one of an MGF phosphor, a KSF phosphor, or a KTF phosphor. As the structure of the phosphor layer 300, any one of the structures of the phosphor layer of FIGS. 1 to 3 may be applied.

The phosphor layer 300 may include a first phosphor layer disposed on the light emitting device 200 and a second phosphor layer disposed on the side of the light emitting device. The ratio of the thickness of the first phosphor to the width of the second phosphor may include 1: 1 to 1: 7. The ratio of the width of the light emitting device 200 to the width of the first phosphor may include 1: 1.21 to 1: 1.35.

The moisture barrier layer 400 may include a silicon material. The moisture barrier layer 400 may include a first moisture barrier layer 400a and a second moisture barrier layer 400b. The first moisture barrier layer 400a may be disposed on an upper surface of the phosphor layer 300. The second moisture barrier layer 400b may be disposed on the side surface of the phosphor layer 300. The second moisture barrier layer 400b may be disposed between the phosphor layer 300 and the reflective layer 500. The moisture barrier layer 400 may include 50 μm to 150 μm.

The reflective layer 500 may be disposed on the side of the phosphor layer 300. The reflective layer 500 may contact the side of the phosphor layer 300 and the side of the moisture barrier layer 400. The reflective layer 500 may be formed to surround side surfaces of the phosphor layer 300 and the moisture barrier layer 400. The reflective layer 500 serves to guide the light generated from the light emitting device 200 upward.

The reflective layer 500 may include a white material. The reflective layer 500 may include a resin material. The reflective layer 500 may include silicon, epoxy, or the like. The reflective layer 500 may include a reflective material such as TiO ₂ . In the reflective layer 500, a reflective material may be formed on a surface of the reflective layer 500 that contacts the phosphor layer 300. The width W5 of the reflective layer 500 may include 50 μm to 150 μm, but is not limited thereto.

The distance L between the reflective layer 500 and the side surface of the light emitting device 200 may be formed to be less than 300 μm. The sum of the widths of the phosphor layer 300 and the second moisture barrier layer 400b disposed on the side of the light emitting device 200 may be less than 300 μm. When the distance L between the reflective layer 500 and the side surface of the light emitting device 200 is formed to be 300 μm or more, light emitted from the side surface of the light emitting device 200 may not be transmitted to the surface of the reflective layer 500. This may lower the light efficiency.

The reflective layer 500 may further include a moisture barrier material for preventing moisture therein. The reflective layer 500 may reflect light upwards and at the same time prevent moisture from entering the side of the light emitting device 200.

The embodiment has an effect of easily emitting light in a desired direction by forming a reflective layer on the side of the light emitting device.

As shown in FIG. 17, the light emitting device package according to the embodiment includes a light emitting device 200, a bonding pad 210 formed on one surface of the light emitting device 200, and a phosphor layer surrounding the light emitting device 200. 300, a moisture barrier layer 400 surrounding the phosphor layer 300, and a reflective layer 500 surrounding the side surface of the moisture barrier layer 400 and the lower surface of the phosphor layer 300. Here, detailed description of the configuration overlapping with that of FIG. 1 is omitted.

The light emitting device 200 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The bonding pads 210 may be spaced apart from the lower surface of the light emitting device 200. The bonding pads 210 may be electrically connected to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively. The bonding pad 210 may supply external power to the light emitting device 200.

The phosphor layer 300 may include at least one of an MGF phosphor, a KSF phosphor, or a KTF phosphor. As the structure of the phosphor layer 300, any one of the structures of the phosphor layer of FIGS. 1 to 3 may be applied.

The phosphor layer 300 may include a first phosphor layer disposed on the light emitting device 200 and a second phosphor layer disposed on the side of the light emitting device. The ratio of the thickness of the first phosphor to the width of the second phosphor may include 1: 1 to 1: 7. The ratio of the width of the light emitting device 200 to the width of the first phosphor may include 1: 1.21 to 1: 1.35.

The moisture barrier layer 400 may include a silicon material. The moisture barrier layer 400 may include a first moisture barrier layer 400a and a second moisture barrier layer 400b. The first moisture barrier layer 400a may be disposed on an upper surface of the phosphor layer 300. The second moisture barrier layer 400b may be disposed on the side surface of the phosphor layer 300. The second moisture barrier layer 400b may be disposed between the phosphor layer 300 and the reflective layer 500. The moisture barrier layer 400 may include 50 μm to 150 μm.

The reflective layer 500 serves to guide the light generated from the light emitting device 200 upward. The reflective layer 500 may include a white material. The reflective layer 500 may include a resin material. The reflective layer 500 may include silicon, epoxy, or the like. The reflective layer 500 may include a reflective material such as TiO ₂ . The reflective layer 500 may have a reflective material formed on a surface of the reflective layer 500 in contact with the moisture barrier layer 400. The width W5 of the reflective layer 500 may include 50 μm to 150 μm, but is not limited thereto.

The reflective layer 500 may include a first reflective layer 500a and a second reflective layer 500b. The first reflective layer 500a may be disposed on the side surface of the first moisture barrier layer 400b. The second reflective layer 500b may be disposed under the phosphor layer 300, under the light emitting device 200, and around the bonding pad 210. The thickness T4 of the second reflective layer 500b may be smaller than the thickness T2 of the bonding pad 210. From this, the bottom surface of the bonding pad 210 may be exposed to the outside.

The reflective layer 500 may further include a moisture barrier material for preventing moisture therein. The reflective layer 500 may reflect light upwards and at the same time prevent moisture from entering the side of the light emitting device 200.

The embodiment has an effect of easily emitting light in a desired direction by forming a reflective layer on the side of the light emitting device.

As shown in FIG. 18, the light emitting device package according to the embodiment includes a light emitting device 200, a bonding pad 210 formed on one surface of the light emitting device 200, and a phosphor layer surrounding the light emitting device 200. 300, a moisture barrier layer 400 surrounding the phosphor layer 300, and a reflective layer 500 surrounding the moisture barrier layer 400 may be included. Here, detailed description of the configuration overlapping with that of FIG. 1 is omitted.

The light emitting device 200 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The bonding pads 210 may be spaced apart from the lower surface of the light emitting device 200. The bonding pads 210 may be electrically connected to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively. The bonding pad 210 may supply external power to the light emitting device 200.

The phosphor layer 300 may include first silicon. The hardness of the first silicon may include 30 to 70. The hardness of the first silicon used in FIG. 15 may be less than the hardness of the silicon used in FIG. 1. The first silicon may reduce the number of cross linkers by lowering the bonding ratio of Si-C. From this, the hardness of the first silicon may be lower than that of the silicon of FIG. 1.

The phosphor layer 300 may include at least one of an MGF phosphor, a KSF phosphor, or a KTF phosphor. As the structure of the phosphor layer 300, any one of the structures of the phosphor layer of FIGS. 1 to 3 may be applied.

The phosphor layer 300 may include a first phosphor layer 300a disposed on the light emitting device 200 and a second phosphor layer 300b disposed on the light emitting device side surface 200. The ratio of the thickness of the first phosphor 300a and the width of the second phosphor 300b may include 1: 1 to 1: 7. The ratio of the width of the light emitting device 200 to the width of the first phosphor 300a may include 1: 1.21 to 1: 1.35.

The first curved surface R may be formed at a lower edge of the second phosphor layer 300b. Since the second phosphor layer 300b has a low hardness, a curved surface R having a predetermined angle may be formed on the cut surface when the phosphor layer 300 is cut.

The moisture barrier layer 400 may include a silicon material. The moisture barrier layer 400 may include 50 μm to 150 μm. The moisture barrier layer 400 may include a first moisture barrier layer 400a and a second moisture barrier layer 400b. The first moisture barrier layer may be disposed on an upper surface of the phosphor layer 300. The second moisture barrier layer 400b may be disposed on the side surface of the second phosphor layer 300b. The second moisture barrier layer 400b may be disposed to cover a portion of the side surface and the lower portion of the second phosphor layer 300b.

The reflective layer 500 may be disposed on the side surface of the moisture barrier layer 400. The reflective layer 500 may contact the side of the moisture barrier layer 400. The reflective layer 500 may be formed to surround side surfaces of the moisture barrier layer 400.

The reflective layer 500 serves to guide the light generated from the light emitting device 200 upward. The reflective layer 500 may include a white material. The reflective layer 500 may include a resin material. The reflective layer 500 may include silicon, epoxy, or the like. The reflective layer 500 may include a reflective material such as TiO ₂ . In the reflective layer 500, a reflective material may be formed on a surface of the reflective layer 500 that contacts the phosphor layer 300. The width of the reflective layer 500 may include 50 μm to 150 μm, but is not limited thereto.

The reflective layer 500 may further include a moisture barrier material for preventing moisture therein. The reflective layer 500 may reflect light upwards and at the same time prevent moisture from entering the side of the light emitting device 200.

The embodiment has an effect of easily emitting light in a desired direction by forming a reflective layer on the side of the light emitting device.

Meanwhile, the light emitting device package according to the embodiment may be applied to the light source device.

In addition, the light source device may include a display device, a lighting device, a head lamp, or the like according to an industrial field.

As an example of the light source device, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module emitting light and including a light emitting element, and a light disposed in front of the reflector and guiding light emitted from the light emitting module to the front. An optical sheet including a light guide plate, prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel; It may include a color filter disposed in front. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. In addition, the display device does not include a color filter and may have a structure in which light emitting devices emitting red, green, and blue light are disposed.

As another example of the light source device, the head lamp may be implemented as a light emitting module or a lighting module including a light emitting device package disposed on a substrate, and the light irradiated from the light emitting module or the lighting module in a predetermined direction, eg, front Reflector (reflector) reflecting light, the lens for refracting the light reflected by the reflector forward, and the shade (block) to block or reflect a part of the light reflected by the reflector toward the lens to achieve the desired light distribution pattern It may include.

Another example of a light source device may be a lighting device including a cover, a light source module, a heat sink, a power supply, an inner case, and a socket. In addition, the light source device according to the embodiment may further include any one or more of the member and the holder. The light source module may include a light emitting device package according to the embodiment.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, but are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be interpreted that the contents related to such a combination and modification are included in the scope of the embodiments.

Although the above description has been made with reference to the embodiments, these are only examples and are not intended to limit embodiments. It will be appreciated that eggplant modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences related to such modifications and applications will have to be construed as being included in the scope of the embodiments set out in the appended claims.

100: PCB Board
200: bonding pad
300: phosphor layer
400: moisture barrier layer
500: reflective layer

Claims (11)

A light emitting device including a bonding pad;
A phosphor layer including a fluorescent material therein and including a first phosphor layer disposed on an upper surface of the light emitting device and a second phosphor layer disposed on a side surface of the light emitting device; And
It includes a moisture barrier layer of silicon material disposed so as to surround at least one surface of the phosphor layer,
The ratio of the width of the light emitting device to the width of the first phosphor layer includes 1: 1.21 to 1: 1.35, and the ratio of the thickness of the first phosphor layer and the width of the second phosphor layer is 1: 1 to 1. A light emitting device package comprising: 1.7. The method of claim 1,
The moisture barrier layer is disposed to surround the upper surface and the side surface of the phosphor layer, the thickness of the moisture barrier layer comprises a light emitting device package 50㎛ to 150㎛. The method of claim 2,
The moisture barrier layer is disposed to cover the lower surface of the phosphor layer, the lower surface of the light emitting device and the periphery of the bonding pad, the moisture barrier layer is smaller than the thickness of the bonding pad, and the thickness of the moisture barrier layer is 3 μm or less. Light emitting device package. The method of claim 2,
A lower edge of the second phosphor layer includes a curved surface, and the moisture barrier layer is disposed to cover the curved surface. The method of claim 4, wherein
And a curved surface is formed on the moisture barrier layer disposed in a region corresponding to the curved surface of the second phosphor layer. The method of claim 1,
A light emitting device package further comprising a reflective layer surrounding the side of the second phosphor layer or the lower portion of the light emitting device and including TiO ₂ , wherein a distance between the side of the second phosphor layer and the reflective layer is less than 300 μm. The method of claim 6,
The moisture barrier layer is disposed on an upper surface of the first phosphor layer, or disposed between the upper surface of the first phosphor layer and the side surface of the second phosphor layer and the reflective layer. The method according to any one of claims 1 to 7,
The moisture barrier layer further comprises a SiO ₂ or a diffusing agent. The method of claim 8,
The fluorescent material is a light emitting device package surrounding the surface of the light emitting device. The method according to any one of claims 1 to 7,
And a roughness disposed on an upper surface of the first phosphor layer and a side surface of the second phosphor layer, wherein the roughness disposed on the side of the second phosphor layer is irregularly disposed. The method according to any one of claims 1 to 7,
The light directing angle emitted to the outside of the phosphor layer comprises a light emitting device package of 145 degrees to 152 degrees.

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