KR20190108029A - Fe-Ni ALLOY SHADOW MASK AND PREPARATION METHOD THEREOF - Google Patents
Fe-Ni ALLOY SHADOW MASK AND PREPARATION METHOD THEREOF Download PDFInfo
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- KR20190108029A KR20190108029A KR1020180110752A KR20180110752A KR20190108029A KR 20190108029 A KR20190108029 A KR 20190108029A KR 1020180110752 A KR1020180110752 A KR 1020180110752A KR 20180110752 A KR20180110752 A KR 20180110752A KR 20190108029 A KR20190108029 A KR 20190108029A
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- Prior art keywords
- iron
- nickel alloy
- shadow mask
- electroplating
- alloy shadow
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- 229910001030 Iron–nickel alloy Inorganic materials 0.000 title claims abstract description 65
- 239000000956 alloy Substances 0.000 title description 6
- 229910045601 alloy Inorganic materials 0.000 title description 5
- 238000002360 preparation method Methods 0.000 title 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000009713 electroplating Methods 0.000 claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 claims abstract description 25
- 229910052742 iron Inorganic materials 0.000 claims abstract description 19
- 238000000137 annealing Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 38
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 239000013543 active substance Substances 0.000 claims description 3
- 239000008139 complexing agent Substances 0.000 claims description 3
- 239000011790 ferrous sulphate Substances 0.000 claims description 3
- 235000003891 ferrous sulphate Nutrition 0.000 claims description 3
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 claims description 3
- 229910000359 iron(II) sulfate Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000003963 antioxidant agent Substances 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 2
- 239000006174 pH buffer Substances 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- 230000003078 antioxidant effect Effects 0.000 claims 1
- 239000006084 composite stabilizer Substances 0.000 claims 1
- 238000003756 stirring Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 238000004064 recycling Methods 0.000 abstract description 2
- 230000000877 morphologic effect Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000005265 energy consumption Methods 0.000 description 4
- 229910001374 Invar Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910017709 Ni Co Inorganic materials 0.000 description 2
- 229910003267 Ni-Co Inorganic materials 0.000 description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- KGRVJHAUYBGFFP-UHFFFAOYSA-N 2,2'-Methylenebis(4-methyl-6-tert-butylphenol) Chemical compound CC(C)(C)C1=CC(C)=CC(CC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O KGRVJHAUYBGFFP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 241000220259 Raphanus Species 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 229960002089 ferrous chloride Drugs 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 229940099690 malic acid Drugs 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- ZNCPFRVNHGOPAG-UHFFFAOYSA-L sodium oxalate Chemical compound [Na+].[Na+].[O-]C(=O)C([O-])=O ZNCPFRVNHGOPAG-UHFFFAOYSA-L 0.000 description 1
- 229940039790 sodium oxalate Drugs 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/06—Screens for shielding; Masks interposed in the electron stream
- H01J29/07—Shadow masks for colour television tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
- H01L21/388—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
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Abstract
Description
본 발명은 유기 발광 다이오드 디스플레이 기술분야에 관한 것으로서, 구체적으로는 금속 섀도우 마스크 및 그 제조 방법에 관한 것이다.TECHNICAL FIELD The present invention relates to the field of organic light emitting diode display technology, and more particularly, to a metal shadow mask and a method of manufacturing the same.
OLED 기술은 차세대 패널 디스플레이 기술의 유력한 경쟁자이며, 각 디스플레이 업체에서는 지속적으로 해상도가 높고 화질이 선명한 OLED 스크린을 생산하고 있다. 기술의 발전 속도를 따라잡고 상이한 시장의 수요에 만족하기 위해 정밀도가 높고, 홀 직경이 작은 마스크 모판 기술은 특히나 절박하고 중요하다.OLED technology is a strong competitor to next-generation panel display technology, and each display company continues to produce OLED screens with high resolution and clear picture quality. In order to keep up with the pace of technology development and to meet the demands of different markets, the mask bedplate technology with high precision and small hole diameter is particularly urgent and important.
현재 Ni 또는 Ni-Co 합금은 통상적으로 전주 도금(電鑄)의 방식을 사용하여 고(高) 정밀도의 섀도우 마스크를 생산하지만, Ni 또는 Ni-Co 합금의 열 팽창 계수가 약 13 ppm/℃로 비교적 높기에, 전장 발광 재료를 증착하는 과정에서 온도가 비교적 높고, 그 형태 안정성은 용이하게 변형이 발생할 수 있기에 재활용률이 낮다. 기존의 철-니켈 합금, 특히 불변합금(Fe-36%Ni)의 열 팽창 계수가 1 내지 2 ppm/℃로 매우 낮다. 하지만 현재 이러한 금속 섀도우 마스크의 생산 방식은 주요하게 인바아 메탈 호일 밴드를 사용하는 바, 두께가 비교적 두껍고, 에칭 영역의 정밀도가 떨어진 문제가 존재한다. 아울러, 에너지 소비가 높고 원가가 높은 등 장점은 이의 발전을 더욱 제한한다. 따라서, 원가가 낮고 에너지 소비가 낮으며 정밀도가 높은 섀도우 마스크 생산 방법의 개발이 시급하다.Currently, Ni or Ni-Co alloys typically produce high precision shadow masks using electroplating, but the thermal expansion coefficient of Ni or Ni-Co alloys is about 13 ppm / ° C. Since it is relatively high, the temperature is relatively high in the process of depositing the electric field luminescent material, and its shape stability is low because the deformation can easily occur. The thermal expansion coefficient of conventional iron-nickel alloys, in particular constant alloys (Fe-36% Ni), is very low, ranging from 1 to 2 ppm / ° C. However, at present, the production method of the metal shadow mask mainly uses the in-var metal foil band, and thus there is a problem in that the thickness is relatively thick and the precision of the etching region is inferior. In addition, the advantages of high energy consumption and high cost further limit its development. Therefore, it is urgent to develop a shadow mask production method having low cost, low energy consumption and high precision.
본 발명의 목적은 철-니켈 합금 섀도우 마스크 및 그 제조 방법을 제공하여, 생산 원가가 높고, 에너지 소비가 높으며, 개구 정밀도가 떨어지고 고온에서 용이하게 변형되는 등 문제를 해결하는 것이다.SUMMARY OF THE INVENTION An object of the present invention is to provide an iron-nickel alloy shadow mask and a method of manufacturing the same, thereby solving problems such as high production cost, high energy consumption, poor opening precision, and easy deformation at high temperatures.
상기 문제를 해결하기 위해, 본 발명은 철-니켈 합금 섀도우 마스크의 제조 방법을 제공하였는 바, 모판을 제공하는 단계(설계 패턴을 지닌 기판일 수 있지만 이에 한하지 않음); 상기 모판을 전주 도금하고, 상기 모판에서 철-니켈 합금층을 형성하는 단계; 필름 제거(감광막을 제거함); 상기 철-니켈 합금층을 상기 모판에서 분리하는 단계; 및 상기 철-니켈 합금층을 어닐링하여, 상기 철-니켈 합금 섀도우 마스크를 획득하는 단계 등을 포함한다. In order to solve the above problems, the present invention provides a method for producing an iron-nickel alloy shadow mask, comprising: providing a mother plate (which may be a substrate having a design pattern, but not limited thereto); Electroplating the base plate and forming an iron-nickel alloy layer on the base plate; Film removal (removing photoresist); Separating the iron-nickel alloy layer from the substrate; And annealing the iron-nickel alloy layer to obtain the iron-nickel alloy shadow mask.
본 발명은 또한 상기 제조 방법을 통해 제조되는 철-니켈 합금 섀도우 마스크를 제공한다. The present invention also provides an iron-nickel alloy shadow mask produced through the above production method.
선행기술과 비교하면, 본 발명은 하기와 같은 기술적 효과를 포함한다. Compared with the prior art, the present invention includes the following technical effects.
본 발명은 철-니켈 합금 섀도우 마스크 및 그 제조 방법을 공개하였고, 전주 도금의 방법을 사용하여, 정밀한 패턴을 가진 모판에 철-니켈 합금 금속 섀도우 마스크를 제조한다. 각 파라미터를 조절하여, 철 함유량이 40% 내지 70%인 철-니켈 합금 섀도우 마스크를 획득할 수 있고, 그 열 팽창 계수는 4 내지 10 ppm/℃ 사이이며, 또한 열처리를 거친 후 열 팽창 계수는 1 내지 3ppm/℃로 하강된다. 따라서 본 발명은 에너지 소비가 낮고 생산이 용이한 고(高) 정밀도 금속 섀도우 마스크를 획득할 수 있으며, 그 형태 안정성이 높고 용이하게 변형되지 않으며, 재활용률의 향상에 유리하다.The present invention discloses an iron-nickel alloy shadow mask and a method for producing the same, and using iron plating, a method of manufacturing an iron-nickel alloy metal shadow mask on a base plate having a fine pattern is provided. By adjusting each parameter, an iron-nickel alloy shadow mask having an iron content of 40% to 70% can be obtained, the thermal expansion coefficient of which is between 4 and 10 ppm / ° C, and after the heat treatment, the thermal expansion coefficient is It is lowered to 1 to 3 ppm / ° C. Therefore, the present invention can obtain a high-precision metal shadow mask having low energy consumption and easy production, and its shape stability is high and does not easily deform, and is advantageous for improving the recycling rate.
여기서 설명하는 도면은 본 발명에 대한 부가적인 이해로서, 본 발명의 일부분을 구성하며, 본 발명의 예시적인 실시예 및 그 설명은 본 발명을 해석하기 위한 것으로서 본 발명을 한정하지 아니한다. 도면에서,
도 1은 본 발명 실시예의 방법 흐름도이다.
도 2는 본 발명 실시예의 니켈 함유량과 열 팽창 계수의 관계도이다.BRIEF DESCRIPTION OF THE DRAWINGS The drawings described herein constitute part of the present invention as an additional understanding of the present invention, and exemplary embodiments of the present invention and the description thereof are intended to interpret the present invention and do not limit the present invention. In the drawing,
1 is a method flow diagram of an embodiment of the present invention.
Fig. 2 is a relation diagram of nickel content and thermal expansion coefficient of the embodiment of the present invention.
이하 도면 및 실시예와 결부하여 본 발명의 실시방식을 상세하게 설명하며, 이로써 본 발명이 기술적 해결수단을 어떻게 사용하여 기술적 과제를 해결하였으며 기술적 효과를 달성하는 지의 실현 과정에 대해서 충분하게 이해하고 실시하도록 한다.DETAILED DESCRIPTION Hereinafter, the embodiments of the present invention will be described in detail with reference to the accompanying drawings and examples, whereby the present invention fully understands and implements how the present invention solves technical problems and achieves technical effects by using technical solutions. Do it.
명세서 및 청구항에서 어떠한 단어로 특정 부재를 지칭하였다. 본 기술분야의 통상의 기술자는 하드웨어 제조사에서 상이한 명칭으로 동일한 부재를 지칭함을 이해할 수 있다. 본 명세서 및 청구항에서 더 설명하고자 하는 것은, 용어 “포괄”, “포함” 또는 임의의 기타 형식의 변화도 배타적이지 않은 포함을 포괄함으로써, 일련의 요소의 과정, 방법, 상품 또는 시스템 등 이러한 요소를 포함할 뿐만 아니라, 명확하게 열거하지 않은 기타 요소도 포함하거나, 또는 이러한 과정, 방법, 상품 또는 시스템의 고유한 요소를 더 포함한다. 더 많은 한정이 없는 정황하에서, “하나의...을(를) 포함한다”는 한정의 요소는 상기 요소의 과정, 방법, 상품 또는 시스템에 존재하는 별도의 동일한 요소를 포함하는 것을 제외하지 않는다.Any word in the specification and claims refers to a particular member. Those skilled in the art can understand that the hardware manufacturer refers to the same member under different names. What is further described in this specification and claims is to cover such elements as a process, method, product or system of elements by encompassing the terms “inclusive”, “comprise” or any other form of change that is not exclusive. As well as other elements not explicitly listed, or further include elements unique to such processes, methods, goods or systems. In the absence of further limitations, the elements of the definition of “comprise one” do not exclude the inclusion of a separate identical element present in the process, method, product or system of the element. .
실시예Example
본 발명의 구체적인 실시예는 철-니켈 합금 섀도우 마스크의 제조 방법은, 하기의 단계를 포함한다. According to a specific embodiment of the present invention, a method of manufacturing an iron-nickel alloy shadow mask includes the following steps.
단계S101: 모판을 제공한다. 모판은 감광막이 도포되고, 노광되며, 현상되는 단계를 거친 후 설계 패턴을 지닌 감광막의 기판일 수 있지만, 이에 한하지 않는다. 모판은 전처리 과정의 깨끗한 모판, 또는 상기 단계에서, 우선 모판에 대해 탈유(除油), 물 세척, 산(酸) 세척 및 재자 물 세척 등 처리 과정을 진행하여, 모판 표면의 잡질을 제거한 것일 수 있다. Step S101: Provide the mother bed. The mother plate may be, but is not limited to, a substrate of a photoresist film having a design pattern after the photoresist film is applied, exposed, and developed. The base plate may be a clean base plate of the pretreatment process, or in the above step, the base plate may first be degreased, washed with water, washed with acid, and washed with water to remove impurities from the surface of the base plate. have.
단계S103: 모판을 전주 도금(電鑄)하고, 모판에 철-니켈 합금층을 형성한다. 조작상에서, 모판을 전주 도금액에 넣고, 적당한 온도에서 모판에 대해 전자 증착 과정을 진행한다. 예를 들면, 모판을 pH 값이 2 내지 3.5인 전주 도금액에 넣고, 또한 40 내지 60℃의 온도에서 전주 도금 과정을 진행한다. 본 발명의 일부 실시예에 있어서, 모판을 전주 도금하는 단계는 pH 값이 3인 전주 도금액에서, 50℃의 온도로 전주 도금 과정을 진행하는 것일 수 있다. 전주 도금 양극은 불변 합금(Invar) 복합 재료 양극 또는 1:2 내지 2:1 비율로 배포된 니켈 양극과 철 양극일 수 있다. 또한 더블 정류기와 같은 정류기를 통해, 철 양극과 니켈 양극의 전류를 각각 제어할 수 있고, 여기서 전류 공급 방식은 전류값이 2 내지 4 A/dm2인 직류 전류 또는 스위치 비율이 1:3 내지 3:1인 충격 전류를 사용할 수 있다. 음양극 거리는 10 내지 50cm이다. 30 내지 60분의 전주 도금 시간내에 두께가 2 내지 100 um인 철-니켈 합금층을 획득할 수 있다. OLED섀도우 마스크(또는 마스크)에 대해 말하자면, 그 두께가 얇을수록 증착 섀도우가 적고, 일반적인 Invar 전주 도금은 20% 지어는 더욱 많은 두께 불균질성을 용이하게 생성하며, 본 실시예는 전주 도금 과정에서 다른 전주 도금액을 교반하여, 전주 도금액의 분포가 더욱 균일하도록 하고, 또한 전주 도금 과정에서 지그(jig)를 통해 전류의 균일한 분포를 제어하며, 본 실시예는 전주 도금층 두께 불균질성<10%인 것을 실현함으로써, 두께가 2 내지 4um인 철-니켈 합금층을 실현할 수 있고, 여전히 모판에서 떼어 낼 수 있다. 균일성을 잘 제어하지 못하는 보편적인 전주 도금에 대해서는, 일부 위치에서는 도금층이 지나치게 얇아(<2um) 분리가 불가한 현상이 발생할 수 있다. 하기의 표1 및 2는 본 발명의 일부 실시예 중 예시적인 것으로서 Invar 전기 도금 섀도우 마스크(철-니켈 합금층) 두께 및 성분 데이터이다. Step S103: The base plate is electroplated to form an iron-nickel alloy layer on the base plate. In operation, the mother plate is placed in the electroplating plating solution and the electron deposition process is performed on the mother plate at a suitable temperature. For example, the mother plate is placed in a electroplating plating solution having a pH value of 2 to 3.5, and the electroplating process is performed at a temperature of 40 to 60 ° C. In some embodiments of the present invention, the electroplating of the mother plate may be performed in the electroplating process at a temperature of 50 ℃ in the electroplating solution with a pH value of 3. The electroplating anodes can be Invar composite anodes or nickel anodes and iron anodes distributed in a 1: 2 to 2: 1 ratio. In addition, through the rectifier, such as a double rectifier, it is possible to control the current of the iron anode and nickel anode, respectively, where the current supply method is a direct current or switch ratio of 1: 3 to 3 with a current value of 2 to 4 A / dm 2 A shock current of: 1 can be used. The negative anode distance is 10 to 50 cm. An iron-nickel alloy layer having a thickness of 2 to 100 um can be obtained within a total plating time of 30 to 60 minutes. As for OLED shadow masks (or masks), the thinner the thickness, the lower the deposition shadow, and typical Invar electroplating plating easily creates more thickness heterogeneity at 20%. By agitating the plating liquid, the distribution of the plating liquid is more uniform, and also controlling the uniform distribution of the current through the jig during the plating process of the electroplating, and this embodiment realizes that the thickness of the electroplating layer is less than 10%. It is possible to realize an iron-nickel alloy layer having a thickness of 2 to 4 um and still be detached from the mother plate. For universal electroplating, which does not control uniformity well, the plating layer may be too thin (<2um) at some locations, which may cause a phenomenon that cannot be separated. Tables 1 and 2 below are Invar electroplating shadow mask (iron-nickel alloy layer) thickness and component data as illustrative of some embodiments of the present invention.
표 1 및 표 2의 내용은 본 실시예 중 철-니켈 합금층의 두께 및 성분의 불균질성을 +/-(4 내지 7)%로 제어하여, 균질성이 가장 바람직한 철-니켈 합금층을 획득하는 것이다. The contents of Tables 1 and 2 are to control the heterogeneity of the thickness and components of the iron-nickel alloy layer in this embodiment to +/- (4 to 7)% to obtain the iron-nickel alloy layer having the most homogeneity. .
이 밖에, 본 실시예에 있어서, 전주 도금액의 성분은 황산 니켈 40 내지 80 g/L, 황산 제1철 20 내지 40 g/L, pH완충제 30 내지 45g/L, 산화 방지제 1 내지 5 g/L, 양극 활성제 10 내지 20 g/L및 착화제 0.2 내지 1 g/L을 포함한다. 산화 방지제는 구연산, 주석산, 수산, 아스코르브산, 사과산, 쿠마린산 중의 한가지 또는 여러가지를 사용할 수 있고; 양극 활성제는 염화 니켈, 염화 제1철, 염산 중의 한가지 또는 여러가지를 사용할 수 있으며; 착화제는 암모니아수, 구연산나트륨, 옥살산 나트륨 중의 한가지 또는 여러가지를 사용할 수 있다. 상이한 철 함유량의 합금 도금 제품의 자성과 열 팽창 계수는 상이하고, 철 함유량이 높을수록 자성이 강하다. In addition, in the present embodiment, the components of the electroplating plating solution are
도 2에 도시된 바와 같이, 40% 내지 64% 철 함유량 범위내에서, 열 팽창 계수(CET, α)는 철 함유량의 증가됨에 따라 감소되고, 64% 정도의 철 함유량에서 최저치에 달하며, 다음 철 함유량이 증가됨에 따라 열 팽창 계수가 증가된다(상대적으로 니켈 함유량이 감소함). OLED 증착용 마스크는 사용할 시 자성과 작은 열 팽창성을 갖기에, 이상적인 OLED 금속 마스크 재료는 가장 바람직하게 자성을 띤 CTE가 0에 근접한 니켈 철 합금 재질이다. 철 함유량의 많고 적음은 전주 도금액 중의 황산 제1철 이온의 농도, 철 양극의 함유량 및 전기 도금 파라미터로 조절할 수 있다. 본 실시예는 이러한 전주 도금 공정을 거쳐 철 함유량이 40% 내지 70%인 철-니켈 합금층을 획득할 수 있다. As shown in Fig. 2, within the range of 40% to 64% iron content, the coefficient of thermal expansion (CET, α) decreases with increasing iron content, reaches a minimum at about 64% iron content, and then iron As the content increases, the coefficient of thermal expansion increases (relatively the nickel content decreases). Since OLED deposition masks have magnetic and small thermal expansion properties when used, the ideal OLED metal mask material is a nickel iron alloy material having a magnetic CTE close to zero most preferably. The high and low iron content can be adjusted by the concentration of ferrous sulfate ion in the electroplating solution, the content of the iron anode and the electroplating parameters. This embodiment can obtain the iron-nickel alloy layer having an iron content of 40% to 70% through this electroplating process.
단계S105: 필름을 제거한다. 예를 들면 전주 도금한 후의 모판을 필름 제거액에 20 내지 40분 정도 담그고, 필름 제거액이 감광막을 용해함으로써, 필름 제거 목적을 달성한다. Step S105: Remove the film. For example, the mother plate after electroplating is immersed in a film removal liquid for about 20 to 40 minutes, and a film removal liquid melt | dissolves a photosensitive film, and achieves the film removal objective.
단계S107: 상기 철-니켈 합금층을 상기 모판에서 분리한다. Step S107: The iron-nickel alloy layer is separated from the mother plate.
단계S109: 상기 철-니켈 합금층을 어닐링하여, 상기 철-니켈 합금 섀도우 마스크를 획득한다. 이 단계는 아르곤 수소 혼합 가스 또는 진공 환경에서 진행될 수 있고, 여기서 어닐링 온도는 대략 200 내지 1000℃이며, 2 내지 10시간 진행된다. 하기의 표 3은 한 그룹의 CTE 데이터 대비를 시사하였다. Step S109: Anneal the iron-nickel alloy layer to obtain the iron-nickel alloy shadow mask. This step can proceed in an argon hydrogen mixed gas or vacuum environment, where the annealing temperature is approximately 200 to 1000 ° C. and proceeds for 2 to 10 hours. Table 3 below suggests a group of CTE data.
(시간)Annealing time
(time)
(ppm/℃)Coefficient of thermal expansion
(ppm / ℃)
표 3 에서 어닐링 단계가 철-니켈 합금 전주 도금 제품(즉 철-니켈 합금층)의 열 팽창 계수를 효과적으로 감소시키는 것을 보아낼 수 있다. It can be seen from Table 3 that the annealing step effectively reduces the coefficient of thermal expansion of the iron-nickel alloy pole plated article (ie iron-nickel alloy layer).
상기 전주 도금 제조 방법을 통해, 전주 도금을 통해 철 함유량이 40% 내지 70%인 철-니켈 합금 섀도우 마스크를 직접 획득할 수 있고, 그 열 팽창 계수는 4 내지 10 ppm/℃ 사이이며, 단계S109의 어닐링 처리 과정을 거친 후, 열 팽창 계수를 1 내지 3 ppm/℃로 더욱 감소시킬 수 있으며, 구조가 안정적이고 변형이 용이하지 않으며 두께가 얇고 균일한 등 특징을 구비한다.Through the electroplating manufacturing method, it is possible to directly obtain an iron-nickel alloy shadow mask having an iron content of 40% to 70% through electroplating, the coefficient of thermal expansion is between 4 to 10 ppm / ℃, step S109 After the annealing process, the coefficient of thermal expansion can be further reduced to 1 to 3 ppm / ° C, the structure is stable, not easy to deform, has a thin thickness and uniform features.
상기 설명은 본 발명의 다수 개의 바람직한 실시예를 서술하였지만, 상기 내용은 본 발명의 이해를 위한 것으로서 본문에서 공개하는 형식을 한정하지 않으며, 기타 실시예의 배제로 간주하면 아니 되고, 각종 기타 조합, 보정 및 환경에 적용될 수 있으며, 본문의 상기 발명의 구상 범위내에서 상기 교시 또는 관련 분야의 기술 또는 지식을 통해 개변할 수 있다. 본 기술분야에서 진행되는 개변 및 변화가 본 발명의 정신과 범위를 벗어나지 않으면, 모두 본 발명에 첨부된 특허청구범위에 속한다.Although the above description has described a number of preferred embodiments of the present invention, the above content is for the purpose of understanding the present invention and is not intended to limit the form disclosed in the text, and should not be regarded as an exclusion of other embodiments, and various other combinations and corrections. And it can be applied to the environment, it can be modified through the skills or knowledge in the teaching or related fields within the scope of the invention of the text. Modifications and changes in the art without departing from the spirit and scope of the present invention all fall within the scope of the appended claims.
Claims (20)
모판(模板)을 제공하는 단계;
상기 모판을 전주 도금하고, 전주 도금액 중 상기 모판에서 철-니켈 합금층을 형성하는 단계;
필름을 제거하는 단계;
상기 철-니켈 합금층을 상기 모판에서 분리하는 단계; 및
상기 철-니켈 합금층을 어닐링하여, 상기 철-니켈 합금 섀도우 마스크를 획득하는 단계; 를 포함하고,
상기 전주 도금액은 황산 니켈 40 내지 80 g/L, 황산 제1철 20 내지 40 g/L, 산화 방지제 1 내지 2 g/L, 양극 활성제 10 내지 20 g/L 및 착화제 0.2 내지 0.4 g/L를 포함하는 것을 특징으로 하는 철-니켈 합금 섀도우 마스크의 제조 방법.
In the method of manufacturing the iron-nickel alloy shadow mask,
Providing a mother bed;
Electroplating the mother plate and forming an iron-nickel alloy layer on the mother plate in the electroplating solution;
Removing the film;
Separating the iron-nickel alloy layer from the substrate; And
Annealing the iron-nickel alloy layer to obtain the iron-nickel alloy shadow mask; Including,
The electroplating plating solution is 40 to 80 g / L nickel sulfate, 20 to 40 g / L ferrous sulfate, 1 to 2 g / L antioxidant, 10 to 20 g / L cathode active agent and 0.2 to 0.4 g / L complexing agent Method of producing an iron-nickel alloy shadow mask comprising a.
상기 모판을 전주 도금하는 상기 단계에서, 상기 전주 도금액을 교반하는 단계; 를 더 포함하는 것을 특징으로 하는 철-니켈 합금 섀도우 마스크의 제조 방법.
The method of claim 1,
In the step of electroplating the mother plate, stirring the electroplating solution; Method of producing an iron-nickel alloy shadow mask further comprises.
상기 전주 도금액은 복합 안정제 2 내지 10 g/L를 더 포함하는 것을 특징으로 하는 철-니켈 합금 섀도우 마스크의 제조 방법.
The method of claim 1,
The electroplating plating solution is a method of manufacturing an iron-nickel alloy shadow mask, characterized in that it further comprises 2 to 10 g / L of a composite stabilizer.
상기 철-니켈 합금층의 철 함유량은 40% 내지 70%인 것을 특징으로 하는 철-니켈 합금 섀도우 마스크의 제조 방법.
The method of claim 1,
The iron content of the iron-nickel alloy layer is a method for producing an iron-nickel alloy shadow mask, characterized in that 40% to 70%.
상기 전주 도금액의 pH 값은 2 내지 3.5 사이인 것을 특징으로 하는 철-니켈 합금 섀도우 마스크의 제조 방법.
The method of claim 1,
PH value of the electroplating plating solution is a method of producing an iron-nickel alloy shadow mask, characterized in that between 2 to 3.5.
상기 전주 도금액의 온도는 40 내지 60℃인 것을 특징으로 하는 철-니켈 합금 섀도우 마스크의 제조 방법.
The method of claim 1,
The temperature of the electroplating plating solution is a method for producing an iron-nickel alloy shadow mask, characterized in that 40 to 60 ℃.
상기 필름을 제거하는 단계는, 필름 제거액에 20 내지 40분동안 담근 후, 물로 세척하는 단계; 를 포함하는 것을 특징으로 하는 철-니켈 합금 섀도우 마스크의 제조 방법.
The method of claim 1,
The removing of the film may include: immersing in a film removing liquid for 20 to 40 minutes, followed by washing with water; Method of producing an iron-nickel alloy shadow mask comprising a.
상기 철-니켈 합금층을 어닐링하는 상기 단계는 아르곤 수소 혼합 가스 또는 진공 환경에서 진행되는 것을 특징으로 하는 철-니켈 합금 섀도우 마스크의 제조 방법.
The method of claim 1,
And annealing the iron-nickel alloy layer is carried out in an argon hydrogen mixed gas or vacuum environment.
상기 철-니켈 합금층을 어닐링하는 상기 단계는 200 내지 1000℃의 온도하에서 2 내지 10시간동안 어닐링하는 것을 특징으로 하는 철-니켈 합금 섀도우 마스크의 제조 방법.
The method of claim 8,
The step of annealing the iron-nickel alloy layer is a method of manufacturing an iron-nickel alloy shadow mask, characterized in that the annealing for 2 to 10 hours at a temperature of 200 to 1000 ℃.
상기 철-니켈 합금 섀도우 마스크를 직접 전주 도금한 후의 열 팽창 계수는 4 내지 10 ppm/℃ 사이이고, 어닐링 처리를 거친 후의 열 팽창 계수는 1 내지 3 ppm/℃ 사이로 하강하는 것을 특징으로 하는 철-니켈 합금 섀도우 마스크의 제조 방법.
The method of claim 1,
The coefficient of thermal expansion after direct electroplating the iron-nickel alloy shadow mask is between 4 and 10 ppm / 占 폚, and the coefficient of thermal expansion after annealing is lowered between 1 and 3 ppm / 占 폚. Method for producing nickel alloy shadow mask.
상기 모판을 전주 도금하는 상기 단계에서, 정류기를 사용하여 철 양극 및 니켈 양극의 전류를 제어하는 것을 특징으로 하는 철-니켈 합금 섀도우 마스크의 제조 방법.
The method of claim 1,
In the step of electroplating the mother plate, the method of manufacturing an iron-nickel alloy shadow mask, characterized in that for controlling the current of the iron anode and nickel anode using a rectifier.
상기 전주 도금액은 30 내지 45g/L의 pH완충제를 더 포함하는 것을 특징으로 하는 철-니켈 합금 섀도우 마스크의 제조 방법.
The method of claim 1,
The electroplating plating solution is a method for producing an iron-nickel alloy shadow mask, characterized in that it further comprises a pH buffer of 30 to 45g / L.
상기 철-니켈 합금층의 두께는 4 내지 100 um인 것을 특징으로 하는 철-니켈 합금 섀도우 마스크의 제조 방법.
The method of claim 1,
The iron-nickel alloy layer thickness of 4 to 100 um, characterized in that the iron-nickel alloy shadow mask manufacturing method.
상기 철-니켈 합금층의 두께 균일성은 3 내지 6 um인 것을 특징으로 하는 철-니켈 합금 섀도우 마스크의 제조 방법.
The method of claim 1,
The thickness uniformity of the iron-nickel alloy layer is a manufacturing method of the iron-nickel alloy shadow mask, characterized in that 3 to 6um.
상기 철-니켈 합금층의 철 함유량은 40% 내지 70%인 것을 특징으로 하는 철-니켈 합금 섀도우 마스크의 제조 방법.
The method of claim 1,
The iron content of the iron-nickel alloy layer is a method for producing an iron-nickel alloy shadow mask, characterized in that 40% to 70%.
An iron-nickel alloy shadow mask produced according to the method of claim 1.
상기 철-니켈 합금층의 두께는 4 내지 100 um인 것을 특징으로 하는 철-니켈 합금 섀도우 마스크.
The method of claim 16,
The iron-nickel alloy shadow mask, characterized in that the thickness of the iron-nickel alloy layer is 4 to 100um.
상기 철-니켈 합금층의 두께 균일성은 3 내지 6 um인 것을 특징으로 하는 철-니켈 합금 섀도우 마스크.
The method of claim 16,
The iron-nickel alloy shadow mask, characterized in that the thickness uniformity of the iron-nickel alloy layer is 3 to 6 um.
상기 철-니켈 합금층의 철 함유량은 40% 내지 70%인 것을 특징으로 하는 철-니켈 합금 섀도우 마스크.
The method of claim 16,
Iron-nickel alloy shadow mask, characterized in that the iron content of the iron-nickel alloy layer is 40% to 70%.
열 팽창 계수는 1 내지 3 ppm/℃인 것을 특징으로 하는 철-니켈 합금 섀도우 마스크.
The method of claim 16,
An iron-nickel alloy shadow mask, wherein the coefficient of thermal expansion is 1 to 3 ppm / ° C.
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