KR20190067334A - Light emitting device and display device using the same - Google Patents

Abstract

According to an embodiment of the present invention, the present invention provides a light emitting device which can increase process safety of a process of arranging a light emitting element, and a display device including the same. In the light emitting element comprising an n-type semiconductor layer and a p-type semiconductor layer, an n-type electrode and a p-type electrode are individually arranged on both sides of upper and lower surfaces of a light emitting element so that a problem in electrical connection does not occur even when being arranged to be overturned in the process of being arranged on a substrate, and a contact hole and the like are arranged to allow each of the n-type semiconductor layer and the n-type electrode, and the p-type semiconductor layer and the p-type electrode to be electrically connected so as to be normally operated even when the light emitting element is overturned in the process of arranging the light emitting element, thereby minimizing a failure rate of the display device.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device and a display device using the light emitting device.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device and a display device using the same, and more particularly, to a light emitting device capable of more stably arranging a light emitting device and a display device using the same.

The display device is widely used as a display screen of a notebook computer, a tablet computer, a smart phone, a portable display device, and a portable information device in addition to a display device of a television or a monitor.

The display device can be divided into a reflection type display device and a light emission type display device. The reflection type display device is a display device in which natural light or light emitted from external light of the display device is reflected by the display device to display information, A display device includes a light emitting device or a light source built in a display device, and displays information using light emitted from a light emitting device or a light source.

The built-in light emitting device may use a light emitting device capable of emitting various wavelengths of light, a light emitting device emitting white or blue light, and a color filter capable of changing the wavelength of emitted light.

In order to realize an image as a display device, a plurality of light emitting elements are disposed on a substrate of a display device, and a driving element for supplying a driving signal or a driving current to control each light emitting element to emit light individually is called a light emitting element And a plurality of light emitting devices arranged on the substrate are analyzed in accordance with the arrangement of information to be displayed and displayed on the substrate.

To be more specific, in such a display device, a plurality of pixels are arranged, each pixel is driven by a thin film transistor (Thin Film Transistor) as a switching element, which is a driving element, and connected to the thin film transistor, The image is displayed.

Representative display devices using thin film transistors include liquid crystal display devices and organic light emitting display devices. Since the liquid crystal display device is not a self-emitting type, a backlight unit is required to emit light at a lower portion (rear surface) of the liquid crystal display device. With this additional backlight unit, the thickness of the liquid crystal display device is increased, and there are restrictions on implementing a display device in various forms of design such as a flexible or circular shape, and luminance and response speed may be lowered.

On the other hand, a display device having a self-luminous device can be realized to be thinner than a display device having a light source, and a flexible and foldable display device can be realized.

A display device having such a self-luminous device may include an organic light emitting display device including an organic material as a light emitting layer and a micro-LED display device using a micro-LED device as a light emitting device. The organic light emitting display device or the micro- Since the same display device does not need a separate light source, it can be used as a thinner or various display device.

However, since an organic light emitting display using an organic material does not require a separate light source, it is easy to generate defective pixels such as an oxidation phenomenon between an organic light emitting layer and an electrode due to penetration of moisture and oxygen, thereby minimizing penetration of oxygen and moisture Various technical constructions are additionally required.

In recent years, research and development of a display device using a micro-sized light emitting diode (hereinafter, referred to as 'LED device') as a light emitting device have been progressing. And has been attracting attention as a next-generation display device because of its high image quality and high reliability.

An LED device is a semiconductor light emitting device that uses a property of emitting light when a current is flowed into the semiconductor, and is widely used for lighting, TV, and various display devices. The LED element is composed of an n-type semiconductor layer and a p-type semiconductor layer, and an active layer therebetween. When current is applied, electrons are present in the n-type semiconductor layer portion and holes are present in the p-type semiconductor layer portion, and light is emitted from the active layer.

The LED device is composed of a compound semiconductor such as GaN, and can inject a high current due to the characteristics of an inorganic material, thereby realizing a high brightness and has high reliability due to low environmental impact such as heat, moisture and oxygen.

In addition, since the internal quantum efficiency of the LED device is higher than that of the organic light emitting display device at the level of 90%, it is possible to display a high-brightness image and realize a display device with low power consumption.

In addition, unlike an organic light emitting diode display, since an inorganic material is used, a separate sealing film or sealing substrate for minimizing penetration of oxygen and moisture at a level of insignificant influence of oxygen and moisture is not required, There is an advantage that the non-display area of the display device, which is a margin area that can be generated by disposition, can be minimized.

However, a light emitting element such as an LED element may need to be formed by using a separate semiconductor substrate and then transferred to a display device. In order to provide a display device having the advantages as described above, there is a need for a technique of disposing a light emitting device at a correct position on a display device and techniques capable of minimizing an error that may occur in the process of disposing the light emitting device. .

As described above, there are several technical requirements for implementing a light emitting display device in which an LED element is used as a light emitting element of a unit pixel. First, an LED element is crystallized on a semiconductor wafer substrate such as sapphire or silicon (Si), and a plurality of crystallized LED chips are moved to a substrate having a driving element, A sophisticated transfer process for positioning the LED element is required.

The LED element can be formed using an inorganic material, but it needs to be formed by crystallization. In order to crystallize an inorganic material such as GaN, the inorganic material must crystallize on a substrate capable of inducing crystallization. The substrate on which the crystallization of the inorganic material can efficiently be induced is a semiconductor substrate, and the inorganic material must be crystallized on the semiconductor substrate as described above.

The process of crystallizing the LED element is also referred to as epitaxy, epitaxial growth, or an epitaxial process. In order to form the device structure of an LED device, a GaN-based compound semiconductor should be stacked on a substrate in the form of a pn junction diode, Lt; RTI ID = 0.0 > crystallinity. ≪ / RTI >

In this case, since the defects in the crystal act as a nonradiative center in the electron-hole recombination process, the crystallinity of the crystals forming each layer in a photon- Which has a decisive influence on the device efficiency.

The sapphire substrate described above is mainly used as a substrate mainly used at present, and recently, a research activity on a substrate based on GaN has actively been performed.

Because of the high price of a semiconductor substrate required for crystallizing an inorganic material such as GaN, which constitutes an LED light emitting element, on a semiconductor substrate, a large amount of light emitting pixels of a display device, rather than an LED used as a light source for simple illumination or backlighting There is a problem that the manufacturing cost is increased when the LED is used.

In addition, as described above, the LED element formed on the semiconductor substrate requires a step of transferring to the substrate constituting the display device. In this process, it is difficult to separate the LED element formed on the semiconductor substrate, There is also a great deal of difficulty in correctly transcribing the LED element to a desired spot.

A method of transferring an LED device formed on a semiconductor substrate to a substrate having a spherical shape, a method of using a transfer substrate using a polymer material such as PDMS, a transfer method using an electromagnetic or electrostatic charge, Transfer methods such as transfer method can be used.

Such a transfer process is related to the productivity of the process of implementing the display device, and the method of moving the LED device one by one for mass production may be inefficient.

Therefore, a plurality of LED elements are separated from a semiconductor substrate by using a transfer substrate using a polymer material and are properly positioned on a substrate constituting a display device, in particular, on a driving element arranged in a thin film transistor and a pad electrode connected to a power electrode A sophisticated transferring process or method has become necessary.

During the subsequent transfer process subsequent to the transferring process or after the transfer process, the LED device may be defective such that the LED device is inverted and transferred during movement or transfer according to the conditions of vibration or inferiority. There were many difficulties in recovering.

The defects that may occur when the LED device is not properly positioned during the transferring process will be described in detail in detail. Hereinafter, a general transfer process will be described as an example.

First, an LED element is formed on a semiconductor substrate and an electrode is formed to complete it as an individual LED element. Then, the semiconductor substrate is brought into contact with a PDMS substrate (hereinafter referred to as a " transfer substrate "), and the transfer substrate is a substrate in which LED elements formed on a semiconductor substrate are divided into pixel regions, A projection shape or the like for receiving the LED element considering the pixel pitch of the display device is protruded and disposed on the transfer substrate.

Thereafter, the LED element is detached from the semiconductor substrate by irradiating the LED element with the LED element through the rear surface of the semiconductor substrate. At this time, when the LED element is separated from the semiconductor substrate during the laser irradiation, Energy can cause physical expansion of energy into the concentration of energy, resulting in shock. Due to such a phenomenon, when the LED element is transferred to the transfer substrate, the LED element can be turned upside down or turned right and left to be transferred (referred to as primary transfer).

Thereafter, the LED element transferred to the transfer substrate is transferred onto the substrate constituting the display device. After the protective layer for insulating / protecting the thin film transistor is disposed on the substrate having the thin film transistor, an adhesive layer is placed on the protective layer do.

When the transfer substrate is brought into contact with the substrate of the display device to apply pressure, the LED element transferred to the transfer substrate is transferred to the substrate side of the display device by the adhesive layer on the protective layer.

At this time, if the adhesive force between the transfer substrate and the LED element is made smaller than the adhesive force between the substrate and the LED element constituting the display device, the LED element on the transfer substrate is transferred to the substrate of the display device (this is referred to as secondary transfer).

The semiconductor substrate and the substrate constituting the display device are basically different in size from each other, and the substrate constituting the display device is usually a CRD. If the primary and secondary transfer are repeatedly performed for a plurality of regions of the substrate of the display device due to such difference in area and size, the LED device can be transferred to the display device.

The LED element formed on the semiconductor substrate may be an LED element of red, blue and green depending on the type thereof, or may be a white LED element. The number of primary and secondary transfers described above can be further increased in the method of implementing pixels of a display device by using an LED element emitting light of different wavelengths.

LEDs are a typical type of PN junction diode. Due to the nature of the diode, the current can only flow in a specific direction. In general, the LED emits light with an electroluminescence effect through the combination of electrons and holes with respect to a forward voltage. Since the energy of an electron in a junction is directly converted into light energy, it does not require heat or kinetic energy macroscopically. Electrons and holes injected into the semiconductor from the electrode flow through different energy bands (conduction band or valence band) and recombine over the band junction near the PN junction. When recombining, a considerable amount of energy is emitted into the photons, that is, light.

As described above, during the primary and secondary transfer processes, the LED element may be inverted or deflected, which increases defective pixels in the display device and increases manufacturing cost. The inventors of the present invention have invented a light emitting device and a display device using the same that can more reliably arrange an LED element as a light emitting element.

On the other hand, in the case of a reverse bias, electrons and holes are escaped and the band gap becomes larger due to the depletion phenomenon, so that the current does not flow. However, when the reverse voltage becomes very large, that is, when the voltage rises to the breakdown voltage, tunneling is generated in the PN junction to cause a current to flow. In this case, a sudden current flow may damage the thin film transistor . Accordingly, the inventors of the present invention have invented a light emitting device and a display device using the same that can minimize damage to a light emitting device and a driving device even when a flow of an irregular current such as static electricity occurs.

A solution to the problem of the present invention is to provide a light emitting device capable of minimizing a defective rate of a display device by allowing an electrical connection even when the light emitting device is turned over in a process of transferring and arranging the light emitting device, .

Another object of the present invention is to provide a light emitting device capable of minimizing damage to a light emitting device and a driving device when an abnormal current such as static electricity is generated, and a display device using the same.

The solutions according to one embodiment of the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

There is provided a light emitting device capable of stably arranging a light emitting device according to an embodiment of the present invention on a substrate and minimizing damage to an abnormal current such as static electricity and a display device using the same. In the light emitting device in which the n-type semiconductor layer, the active layer and the p-type semiconductor are stacked in this order, at least one n-type electrode is disposed on the n-type semiconductor layer and at least one p-type electrode is disposed on the p- . The n-type semiconductor layer includes a first n-type semiconductor layer and a second n-type semiconductor layer. The p-type semiconductor layer is divided into a first p-type semiconductor layer and a second p- 2 < / RTI > The first n-type semiconductor layer and the second n-type semiconductor layer are separated from each other by the first bank and are insulated from the n-type electrode. At least one first contact hole is formed, the second p-type semiconductor layer separated by the second bank is insulated from the p-type electrode, and the second contact hole is disposed so that the p-type electrode is electrically connected to the second n-type semiconductor layer through the second contact hole, Type semiconductor layer. When electrons and holes are supplied to the n-type electrode and the p-type electrode, a forward voltage is applied to the first n-type semiconductor layer and the first p-type semiconductor layer, and the second n-type semiconductor layer and the second p- The voltage is transferred.

In this way, the first and second n-type and p-type semiconductor layers with respect to the reverse direction and the voltage can block the reverse voltage and couple electrons and holes to the forward voltage, It is possible to perform the light emission and the protection function without distinction of the upper and lower sides while minimizing the damage.

According to the embodiment of the present invention, by using a light emitting element capable of minimizing defects due to the step of disposing the light emitting element, it is possible to reduce the defects of the display device that may occur during the process of disposing the light emitting element, . In addition, the use of the light emitting element has the effect of increasing process convenience.

According to an embodiment of the present invention, by using a light emitting element capable of minimizing the damage of the light emitting element and the driving element due to the reverse voltage, the life stability can be improved and the reliability of the product can be improved.

The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

The scope of the claims is not limited by the matters described in the contents of the invention, as the contents of the invention described in the problems, the solutions to the problems and the effects to be solved do not specify essential features of the claims.

1 is a schematic plan view of a light emitting display according to an embodiment of the present invention.
FIG. 2 is a schematic circuit diagram for explaining a configuration of a unit pixel according to the embodiment shown in FIG. 1. Referring to FIG.
3 is a schematic cross-sectional view illustrating a display device in which a light emitting device according to an embodiment of the present invention is disposed.
4A is a schematic perspective view illustrating a light emitting device according to an embodiment of the present invention.
4B is a schematic cross-sectional view taken along the line A-A 'for illustrating the light emitting device shown in FIG. 4A.
5A is a schematic perspective view illustrating a light emitting device according to another embodiment of the present invention.
5B is a schematic cross-sectional view along the line A-A 'for explaining the light emitting device shown in FIG. 5A.
6A and 6B are schematic cross-sectional views illustrating various examples of use of a light emitting device according to an embodiment of the present invention.
7A to 7C are schematic views for explaining various embodiments of the light emitting device according to the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. Where the terms "comprises", "having", "done", and the like are used in this specification, other portions may be added unless "only" is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if the temporal relationship is described by 'after', 'after', 'after', 'before', etc., May not be continuous unless they are not used.

In the case of a description of the signal flow relationship, for example, even if 'signal is transmitted from node A to node B' And a case where a signal is transmitted to the B-node.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

Various embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

FIG. 1 is a schematic plan view of a light emitting display according to an embodiment of the present invention, and FIG. 2 is a schematic circuit diagram for explaining the structure of a unit pixel according to the embodiment shown in FIG. 1 and 2, a light emitting display 100 according to an exemplary embodiment of the present invention includes a display region AA having a plurality of unit pixels UP and a non-display region IA And a substrate 110.

The unit pixel UP may be composed of a plurality of sub-pixels SP1, SP2 and SP3 on the front surface 110a of the substrate 110 and may be formed of red, blue, And may include subpixels (SP1, SP2, SP3) emitting light, but not limited thereto, and subpixels emitting light such as white.

The substrate 110 is a thin film transistor array substrate, and may be made of glass or plastic, or may be a laminate of two or more substrates or a substrate divided into two or more layers. The non-display area IA can be defined as an area on the substrate 110 excluding the display area AA, which may have a relatively narrow width, and may be defined as a bezel area.

Each of the plurality of unit pixels UP is arranged in the display area AA. At this time, each of the plurality of unit pixels UP has a predetermined first reference pixel pitch along the X-axis direction and is arranged in the display area AA so as to have a predetermined second reference pixel pitch along the Y-axis direction. The first reference pixel pitch may be defined as a distance between right and left center portions of each adjacent unit pixel UP, and the second reference pixel pitch may be defined as a distance between each of the unit pixels UP adjacent in the reference direction similar to the first reference pixel pitch. And can be defined as the distance between the center portions.

The distance between the sub-pixels SP1, SP2 and SP3 constituting the unit pixel UP is also defined as a first reference sub-pixel pitch and a second reference sub-pixel pitch similar to the first reference pixel pitch and the second reference pixel pitch. .

The width of the non-display area IA may be smaller than the pixel pitch or the subpixel pitch described above, and the width of the non-display area IA may be smaller than the pixel pitch or the subpixel pitch. When the multi-screen display device is configured with the light emitting display device 100 having the display area IA, since the non-display area IA is smaller than the pixel pitch or sub-pixel pitch, the multi-screen display device having substantially no bezel area .

In order to realize a multi-screen display device in which the bezel region is substantially absent or minimized as described above, the light emitting display device 100 has a first reference pixel pitch, a second reference pixel pitch, Although the first reference sub-pixel pitch and the second reference sub-pixel pitch may be kept constant, the display area AA may be defined as a plurality of zones and the pitch lengths may be different from each other within each zone, IA, the pixel pitch of the adjacent region may be made wider than the other region, so that the size of the bezel region can be made smaller than the pixel pitch relatively.

Since the light emitting display device 100 having different pixel pitches may cause distortion of an image, image processing is performed by sampling the image data in comparison with an adjacent area in consideration of the set pixel pitch, The bezel area can be minimized while minimizing the distortion.

However, in order to minimize the non-display area IA, a pad area for connection with a power supply and a circuit part capable of sending and receiving a data signal to the unit pixel UP having the LED element 150 and a drive IC And so on.

The configuration and the circuit structure of the sub-pixels SP1, SP2, and SP3 constituting the unit pixel UP of the light emitting display device 100 will be described with reference to FIG. The pixel drive lines are provided on the front surface 110a of the substrate 110 and supply necessary signals to each of the plurality of sub-pixels SP1, SP2, and SP3. The pixel drive lines according to an embodiment of the present invention include a plurality of gate lines GL, a plurality of data lines DL, a plurality of driving power supply lines DPL, and a plurality of common power supply lines CPL.

Each of the plurality of gate lines GL is provided on a front surface 110a of the substrate 110 and extends in the first horizontal axis direction X of the substrate 110, (Y).

The plurality of data lines DL are provided on the front surface 110a of the substrate 110 so as to intersect the plurality of gate lines GL and extend in the second horizontal axis direction Y of the substrate 110 And are spaced apart from each other along the first horizontal axis direction X by a predetermined distance.

The plurality of driving power supply lines DPL are provided on the substrate 110 so as to be parallel to the plurality of data lines DL and may be formed together with each of the plurality of data lines DL. Each of the plurality of driving power supply lines DPL supplies a pixel driving power provided from the outside to the adjacent subpixels SP.

The plurality of common power supply lines CPL are provided on the substrate 110 so as to be parallel to each of the plurality of gate lines GL and may be formed together with each of the plurality of gate lines GL. Each of the plurality of common power supply lines CPL supplies a common power supplied from the outside to the adjacent sub-pixels SP1, SP2, and SP3.

Each of the plurality of subpixels SP1, SP2, and SP3 is provided in a subpixel region defined by a gate line GL and a data line DL. Each of the plurality of sub-pixels SP1, SP2, and SP3 may be defined as a minimum unit area in which actual light is emitted.

At least three sub-pixels SP1, SP2, and SP3 adjacent to each other may constitute one unit pixel UP for color display. For example, one unit pixel UP includes red sub-pixel SP1, green sub-pixel SP2 and blue sub-pixel SP3 adjacent to each other along the first horizontal axis direction X, For example, white subpixels.

Alternatively, each of the plurality of driving power supply lines DPL may be provided for each of the plurality of unit pixels UP. In this case, at least three sub-pixels SP1, SP2 and SP3 constituting each unit pixel UP share one driving power supply line DPL. Accordingly, it is possible to reduce the number of driving power supply lines for driving each of the sub-pixels SP1, SP2, and SP3, increase the aperture ratio of each unit pixel UP by the number of driving power supply lines that decrease, It is possible to reduce the size of the pixel UP.

Each of the plurality of sub-pixels SP1, SP2 and SP3 according to an embodiment of the present invention includes a pixel circuit PC and an LED element 150. [

The pixel circuit PC is provided in a circuit region defined in each subpixel SP and is connected to the adjacent gate line GL, data line DL and driving power supply line DPL. This pixel circuit PC is driven by the data signal from the data line DL in response to the scan pulse from the gate line GL based on the pixel drive power supplied from the drive power supply line DPL ) Of the current flowing through the capacitor. The pixel circuit PC according to an embodiment of the present invention includes a switching thin film transistor T1, a driving thin film transistor T2, and a capacitor Cst.

The switching thin film transistor T1 includes a gate electrode connected to the gate line GL, a first electrode connected to the data line DL and a second electrode connected to the gate electrode N1 of the driving thin film transistor T2. Here, the first and second electrodes of the switching TFT T1 may be a source electrode or a drain electrode depending on the current direction. The switching thin film transistor T1 is switched according to a scan pulse supplied to the gate line GL to supply a data signal to the data line DL to the driving thin film transistor T2.

The driving thin film transistor T2 controls the amount of current flowing from the driving power supply line DPL to the LED element 150 by being turned on by the voltage supplied from the switching thin film transistor T1 and / or the voltage of the capacitor Cst . The driving thin film transistor T2 according to an embodiment of the present invention includes a gate electrode connected to the second electrode N1 of the switching thin film transistor T1, a drain electrode connected to the driving power supply line DPL, And a source electrode connected to the device 150. The driving thin film transistor T2 controls the data current flowing from the driving power line DPL to the LED element 150 based on the data signal supplied from the switching thin film transistor T1 to control the light emission of the LED element 150 do.

The capacitor Cst is provided in an overlapping region between the gate electrode N1 and the source electrode of the driving thin film transistor T2 and stores a voltage corresponding to the data signal supplied to the gate electrode of the driving thin film transistor T2, The driving TFT T2 is turned on.

Alternatively, the pixel circuit PC may further include at least one compensating thin film transistor for compensating for a change in threshold voltage of the driving thin film transistor T2, and further may include at least one auxiliary capacitor. The pixel circuit PC may be supplied with a compensating power such as an initializing voltage depending on the number of the thin film transistors and the auxiliary capacitors. Therefore, since the pixel circuit PC according to the embodiment of the present invention drives the LED device 150 through the current driving method like each sub pixel of the OLED display device, Circuit.

The LED element 150 is mounted on each of the plurality of sub-pixels SP1, SP2 and SP3. The LED element 150 is electrically connected to the pixel pixel circuit PC of the corresponding subpixel SP and the common power line CPL so that the pixel element circuit PC, that is, the driving thin film transistor T2, (CPL). The LED device 150 according to an embodiment of the present invention may be an optical device or a light emitting diode chip that emits one of red light, green light, blue light, and white light. Here, the light emitting diode chip may have a scale of 1 to 100 micrometers, but it may have a size smaller than the size of the remaining light emitting region excluding the circuit region occupied by the pixel pixel circuit (PC) .

3 is a schematic cross-sectional view illustrating a display device in which a light emitting device according to an embodiment of the present invention is disposed.

Each of the sub-pixels SP1, SP2 and SP3 of the display device according to the embodiment of the present invention includes the protective layer 113, the LED element 150, A planarization layer 115-1, 115-2, a pixel electrode PE, and a common electrode CE.

Although the thickness of the substrate 110 is relatively thin in FIG. 3, the thickness of the substrate 110 may be substantially thicker than the total thickness of the layer structure provided on the substrate 110, Or may be a substrate composed of a plurality of layers or a plurality of substrates bonded together.

The pixel pixel circuit PC includes a switching thin film transistor T1, a driving thin film transistor T2, and a capacitor C. Since the pixel circuit PC is the same as that described above, a detailed description thereof will be omitted. Hereinafter, the structure of the driving thin film transistor T2 will be described by way of example.

The driving thin film transistor T2 includes a gate electrode GE, a semiconductor layer SCL, a source electrode SE, and a drain electrode DE.

The gate electrode GE is disposed on the substrate 110 together with the gate line GL. This gate electrode (GE) is covered by the gate insulating layer (112). The gate insulating layer 112 may be formed of a single layer or a plurality of layers made of an inorganic material, and may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or the like.

The semiconductor layer SCL is provided in the form of a predetermined pattern (or island) on the gate insulating layer 112 so as to overlap with the gate electrode GE. The semiconductor layer SCL may be formed of a semiconductor material composed of any one of amorphous silicon, polycrystalline silicon, oxide, and organic material, but is not limited thereto.

The source electrode SE is disposed so as to overlap with one side of the semiconductor layer SCL. The source electrode SE is disposed together with the data line DL and the driving power supply line DPL.

The drain electrode DE is disposed so as to be spaced apart from the source electrode SE while overlapping with the other side of the semiconductor layer SCL. The drain electrode DE is disposed together with the source electrode SE and branches or protrudes from the adjacent driving power supply line DPL.

In addition, the switching thin film transistor T1 constituting the pixel pixel circuit PC is arranged in the same structure as the driving thin film transistor T2. At this time, the gate electrode of the switching thin film transistor T1 is branched or protruded from the gate line GL, the first electrode of the switching thin film transistor T1 is branched or protruded from the data line DL, and the switching thin film transistor T1 Is connected to the gate electrode GE of the driving thin film transistor T2 through a via hole provided in the gate insulating layer 112. [

The protective layer 113 is provided over the entire surface of the substrate 110 so as to cover the sub-pixel SP, that is, the pixel circuit PC. This protective layer 113 protects the pixel circuit PC and provides a flat surface. The protective layer 113 may be made of organic material such as benzocyclobutene or photo acryl, but it is preferably made of a photo-acrylic material for convenience of processing.

The LED element 150 according to an embodiment of the present invention may be disposed such that an adhesive member 114 is used on the protective layer 113. Alternatively, the light emitting device may be disposed in a recess provided on the protective layer 113, and the inclined surface due to the concave portion in the protective layer 113 may advance the light emitted from the LED device 150 in a specific positive direction, It can play a role of improving.

The LED element 150 is electrically connected to the pixel pixel circuit PC and the common power supply line CPL to thereby apply a current to the pixel pixel circuit PC or the driving thin film transistor T2 from the common power supply line CPL And emits light. The LED device 150 according to an embodiment of the present invention includes a light emitting layer EL, a first electrode (or an anode terminal) E1, and a second electrode (or a cathode terminal) E2.

The LED element 150 emits light according to the recombination of electrons and holes according to the current flowing between the first electrode E1 and the second electrode E2.

The planarization layers 115-1 and 115-2 are disposed on the protective layer 113 so as to cover the LED element 150. [ That is, the planarization layers 115-1 and 115-2 are formed to have a thickness enough to cover both the front surface of the protective layer 113 and the LED element 150, .

The planarization layers 115-1 and 115-2 may be formed of a single layer and may include a planarization layer 115 having a multilayer structure composed of a first planarization layer 115-1 and a second planarization layer 115-2 -1,115-2).

As such, the planarization layers 115-1 and 115-2 provide a flat surface on the protective layer 113. [ In addition, the planarization layers 115-1 and 115-2 serve to fix the position of the LED element 150. FIG.

The pixel electrode PE connects the second electrode E2 of the LED device 150 to the drain electrode DE of the driving thin film transistor T2 so that the pixel electrode PE is connected to the source electrode SE according to the configuration of the thin film transistor T2. A connection configuration is also possible. The pixel electrode PE may be defined as an anode electrode. The pixel electrode PE according to an embodiment of the present invention is provided on the entire surfaces of the planarization layers 115-1 and 115-2 overlapping the second electrode E2 of the LED element 150 and the driving thin film transistor T2 . The pixel electrode PE is electrically connected to the drain electrode DE or the source electrode SE of the driving TFT T2 through the first circuit contact hole CCH1 provided through the protection layer 113, And is electrically connected to the second electrode E2 of the LED element 150 on the layer 113. [ The second electrode E2 of the LED element 150 is electrically connected to the drain electrode DE or the source electrode SE of the driving TFT T2 through the pixel electrode PE.

The drain electrode DE is connected to the pixel electrode PE in the connection relationship between the source electrode SE and the drain electrode DE but the pixel electrode PE and the source electrode SE may be connected to each other Which is an option of the skilled artisan.

The pixel electrode PE may be formed of a transparent conductive material when the LED display device is a top emission type and a light emitting conductive material when the LED display device is a bottom emission type. . Here, the transparent conductive material may be indium tin oxide (ITO), indium zinc oxide (IZO), or the like, but is not limited thereto. The light reflecting conductive material may be Al, Ag, Au, Pt, Cu, or the like, but is not limited thereto. The pixel electrode PE made of a light-reflective conductive material may be a single layer including a light-reflective conductive material or a multilayer in which the single layer is stacked.

The common electrode CE electrically connects the first electrode E1 of the LED element 150 to the common power line CPL and may be defined as a cathode electrode. The common electrode CE is provided on the entire surface of the planarization layers 115-1 and 115-2 overlapping the common power line CPL while overlapping the first electrode E1 of the LED device 150. [ Here, the common electrode CE may be made of the same material as the pixel electrode PE.

One side of the common electrode CE according to an embodiment of the present invention includes a gate insulating layer 112 overlapping a common power line CPL, a passivation layer 113 and planarization layers 115-1 and 115-2 And is electrically connected to the common power line CPL through the second circuit contact hole CCH2. The other side of the common electrode CE according to an embodiment of the present invention is connected to the first electrode E1 of the LED element 150 through an electrode contact hole ECH provided in the planarization layers 115-1 and 115-2 And is electrically connected to the first electrode (E1) of the LED element (150). Accordingly, the first electrode E1 of the LED device 150 is electrically connected to the common power line CPL through the common electrode CE.

The pixel electrode PE according to an exemplary embodiment of the present invention includes a deposition process for depositing an electrode material on a protective layer 113 including a first circuit contact hole CCH1 and an electrode patterning process using a photolithography process and an etching process. Process. And a pad electrode for smooth electrical connection with the second electrode E2 of the light emitting device 150 may be added. The common electrode CE is formed by a deposition process for depositing an electrode material on the planarization layers 115-1 and 115-2 including the second circuit contact hole CCH2 and an electrode patterning process using a photolithography process and an etching process .

According to an embodiment of the present invention, the light emitting diode display further includes a transparent buffer layer 116. The transparent buffer layer 116 is provided on the substrate 110 so as to cover the entirety of the planarization layers 115-1 and 115-2 provided with the common electrode CE so that a flat surface is formed on the planarization layers 115-1 and 115-2 And protects the LED element 150 and the pixel pixel circuit PC from an external impact. Thus, the pixel electrode PE and the common electrode CE are provided between the planarization layers 115-1 and 115-2 and the transparent buffer layer 116, respectively. The transparent buffer layer 116 may be an optical clear adhesive (OCA) or an optical clear resin (OCR) according to an exemplary embodiment of the present invention.

The light emitting diode display according to an embodiment of the present invention further includes a reflection layer 111 provided below the light emitting region of each subpixel SP. The reflective layer 111 is provided on the substrate 110 so as to overlap the light emitting region including the LED element 150. The reflective layer 111 according to an exemplary embodiment of the present invention may be formed of the same material as the gate electrode GE of the driving TFT T2 and may be formed on the same layer as the gate electrode GE. The reflective layer 111 may be formed of the same material as any one of the electrodes constituting the driving TFT T2.

The reflective layer 111 reflects the light incident from the LED element 150 toward the upper side of the LED element 150. Accordingly, the light emitting diode display according to an exemplary embodiment of the present invention has a top emission structure including the reflective layer 111. However, if the light emitting diode display device according to an embodiment of the present invention has a bottom emission structure, the reflective layer 111 may be omitted or disposed on the LED device 150.

Alternatively, the reflective layer 111 may be formed of the same material as the source / drain electrode SE / DE of the driving TFT T2 and may be provided on the same layer as the source / drain electrode SE / DE.

The LED element 150 mounted on each subpixel SP may be disposed at a position corresponding to the upper portion of the reflective layer 111 corresponding to the LED element 150 by the adhesive member 114. In the display device according to an embodiment of the present invention, have. The adhesive member 114 may be disposed inside the concave portion of each subpixel SP such that the concave portion is formed by concave portions of the planarization layers 115-1 and 115-2 or the protective layer 113, The adhesive member 114 may be formed by processing a part of a plurality of layers such as the LEDs 115-1 and 115-2. The adhesive member 114 may primarily fix the LED element 150 inside the concave portion described above, Is not essential.

The adhesive member 114 according to an embodiment of the present invention is in contact with the lower portion of the LED element 150 and prevents the placement of the LED element 150 during the mounting process, The LED device 150 can be smoothly detached from the LED device 150, thereby minimizing the defective process of the LED device 150.

The adhesive member 114 according to an embodiment of the present invention is dotted on each subpixel SP and spread by the pressing force applied in the mounting process of the light emitting device, As shown in Fig.

Accordingly, the LED element 150 can be primarily fixed in position by the adhesive member 114. [ Therefore, according to the present embodiment, the mounting process of the light emitting device is performed by simply bonding the LED device 150 to the surface, so that the mounting process time of the light emitting device can be greatly shortened.

The adhesive member 114 is interposed between the protective layer 113 and the planarization layers 115-1 and 115-2 and interposed between the LED element 150 and the protective layer 113. [ A part of the adhesive member 114 coated on the entire surface of the protective layer 113 on which the contact holes are to be provided is formed to be in contact with the entire surface of the protective layer 113, Removed when the holes are arranged. Accordingly, in one embodiment of the present invention, the adhesive member 114 is coated on the entire front surface of the protective layer 113 to a predetermined thickness immediately before the mounting process of the light emitting device, thereby shortening the process time for disposing the adhesive member 114 .

The planarization layers 115-1 and 115-2 of this embodiment are provided so as to cover the adhesive member 114 because the adhesive member 114 is provided over the entire front surface of the protective layer 113. In this embodiment,

In another embodiment of the present invention, the LED element 150 has a separate recess for receiving, and may be located through the adhesive member 114 inside the recess. However, the recesses for accommodating the LED element 150 described above may be eliminated according to various process conditions for implementing the display device.

Or in the above-described configuration, the adhesive member 114 may be a resin-based adhesive layer that is disposed on the upper side of the protective layer 113 and includes a film or a conductive ball which includes conductive balls disposed only below the LED element 150 have. And may include a conductive ball for electrical connection between the second electrode E2 under the LED element 150 and the pixel electrode PE or may be an adhesive layer containing a conductive material.

The mounting process of the light emitting device according to an embodiment of the present invention includes a process of mounting a red light emitting device on each of the red subpixels SP1, a process of mounting a green light emitting device on each of the green subpixels SP2, And the blue subpixels SP3, respectively, and mounting the white light emitting device on each of the white subpixels.

The mounting process of the light emitting device according to an exemplary embodiment of the present invention may include only a process of mounting a white light emitting device on each of the sub pixels. In this case, the substrate 110 includes a color filter layer overlapping each sub pixel. The color filter layer transmits only light having a wavelength of a hue corresponding to the sub-pixel among the white light.

The mounting process of the light emitting device according to an embodiment of the present invention may include only a process of mounting the light emitting device of the first color in each of the subpixels. In this case, the substrate 110 includes a wavelength conversion layer and a color filter layer overlapping each sub pixel. The wavelength conversion layer emits light of a second color based on a part of the light of the first color incident from the light emitting element. The color filter layer transmits only light having a wavelength of a hue corresponding to the sub-pixel among the white light resulting from the mixing of the light of the first color and the light of the second color. Here, the first hue may be blue and the second hue may be yellow. The wavelength conversion layer may include a phosphor or a quantum dot particle that emits light of a second color based on a part of light of the first color.

The LED device 150 includes the first electrode E1 and the second electrode E2 on the upper surface or the lower surface of the LED device 150 and the LED device 150 may be disposed The LED element 150 can emit light by electrons and holes supplied from the first electrode E1 and the second electrode E2 even when the LED element 150 is disposed in an inverted state. The detailed configuration of the LED element 150 will be described with reference to the following drawings.

4A is a schematic perspective view illustrating a light emitting device according to an embodiment of the present invention, and FIG. 4B is a schematic cross-sectional view along A-A 'for illustrating a light emitting device shown in FIG. 4A.

Referring to FIGS. 4A and 4B, a description will be made with reference to the previous drawings.

The light emitting layer EL includes a p-type semiconductor layer 151, a first electrode E1, and a second electrode E2. The light emitting layer EL includes a light emitting layer EL, a first electrode E1, and a second electrode E2. An n-type semiconductor layer 152, and an n-type semiconductor layer 153. The LED element 150 emits light according to the recombination of electrons and holes according to the current flowing between the first electrode E1 and the second electrode E2.

The p-type semiconductor layer 151 is a semiconductor in which holes are used as carriers for transferring charges. A positive hole having a positive charge moves as a carrier to generate an electric current. That is, the n-type semiconductor layer 153 is a semiconductor in which holes become majority carriers, and free electrons are used as carriers for transferring charges. Free electrons having a negative charge move as a carrier to generate a current. That is, a semiconductor in which majority carriers are electrons.

The first electrode E1 and the second electrode E2 may be referred to as a p-type electrode or an n-type electrode according to an electrical connection relation, that is, depending on a semiconductor layer forming an electrical connection, but the first or second electrode E1, E2). In this specification, the arrangement relationship of the p-type semiconductor layer 151 and the n-type semiconductor layer 153 will be described by way of example, but the positions of the p-type semiconductor layer 151 and the n- have.

The p-type semiconductor layer 151 is provided on the active layer 152 to provide holes in the active layer 152. The p-type semiconductor layer 151 may be made of a p-GaN semiconductor material, and the p-GaN semiconductor material may be GaN, AlGaN, InGaN, AlInGaN, or the like. The impurity used for doping the p-type semiconductor layer 151 may be Mg, Zn, Be, or the like.

The n-type semiconductor layer 153 provides electrons to the active layer 152. The n-type semiconductor layer 153 may be made of an n-GaN based semiconductor material, and the n-type GaN based semiconductor material may be GaN, AlGaN, InGaN, or AlInGaN. As the impurity used for doping the n-type semiconductor layer 153, Si, Ge, Se, Te, or C may be used.

The active layer 152 is provided on the n-type semiconductor layer 153. The active layer 152 has a multi quantum well (MQW) structure having a barrier layer having a higher bandgap than that of the well layer and the well layer. The active layer 152 according to an embodiment of the present invention may have a multiple quantum well structure such as InGaN / GaN.

The p-type semiconductor layer 151 may be divided into a first p-type semiconductor layer 151a and a second p-type semiconductor layer 151b by a first barrier rib W1. The first barrier rib W1 for separating the p-type semiconductor layer 151 into the first p-type semiconductor layer 151a and the second p-type semiconductor layer 151b may be made of an insulating material such as SiOx or SiNx, The first p-type semiconductor layer 151a and the second p-type semiconductor layer 151b are insulated by the first barrier W1 to prevent direct movement of holes.

The n-type semiconductor layer 153 may be divided into a first n-type semiconductor layer 153a and a second n-type semiconductor layer 153b by a second bank W2. The second bank W2 for separating the n-type semiconductor layer 153 into the first n-type semiconductor layer 153a and the second n-type semiconductor layer 153b may be made of an insulating material such as SiOx or SiNx, The first n-type semiconductor layer 153a and the second n-type semiconductor layer 153b are insulated by the two barrier ribs W2 to block direct movement of electrons.

The second p-type semiconductor layer 151b is insulated from the first electrode E1 and includes at least one first contact hole CNT1. The first contact hole CNT1 extends to the second n-type semiconductor layer 153b and a first internal electrode IE1 is disposed therein to electrically connect the first electrode E1 and the second n-type semiconductor layer 153b Connect electrically.

Meanwhile, the second n-type semiconductor layer 153b is insulated from the second electrode and includes at least one second contact hole CNT2. The second contact hole CNT2 extends to the second p-type semiconductor layer 151b and the second internal electrode IE2 is disposed therein to electrically connect the second electrode E2 and the second p- Connect electrically.

The LED element 150 can be divided into the first region Z1 and the second region Z2 by the first barrier rib W1 and the second barrier rib W2. , Holes are supplied from the first electrode (E1) in the first region (Z1) including the first n-type semiconductor layer (153a) and the first p-type semiconductor layer (151a) with the active layer (152) In the forward voltage state in which electrons are supplied from the second electrode E2, light is emitted. In the reverse voltage state where electrons are supplied from the first electrode E1 and holes are supplied from the second electrode E2, .

Holes are supplied from the first electrode E1 in the second region Z2 including the second n-type semiconductor layer 153b and the second p-type semiconductor layer 151b with the active layer 152 therebetween The current is cut off in a forward voltage state in which electrons are supplied from the second electrode E2 and emitted in a reverse voltage state in which electrons are supplied from the first electrode E1 and holes are supplied from the second electrode E2 .

On the other hand, when the forward voltage and the reverse voltage are applied in the opposite manner to the above-described case, the light can be emitted or cut off according to the electrons and holes applied to the n-type semiconductor 153 and the p-type semiconductor 151, respectively.

More specifically, referring to the above-described configuration, in a state of either the first region Z1 or the second region Z2, light emission due to the combination of electrons and holes occurs in the reverse and forward voltage states , It is possible to improve the lifetime stability of the device by combining electrons and holes so that the current does not exceed the limit of the device even if the current is cut off in the other area and unintended current such as static electricity occurs in the display device. It is possible to reduce the abnormal current applied to the constituent driving elements and protect the driving elements of the display device.

In addition, in the above-described configuration, the LED element 150 can emit light in forward and reverse voltages supplied with electrons and holes through the first electrode E1 and the second electrode E2, The light emitting function of each sub-pixel SP can be maintained even if the LED elements 150 are arranged in an inverted manner in the process of arranging the sub-pixels SP in the sub-pixels SP.

By using the LED element 150 having the above-described configuration, the process stability of the process of disposing the LED element 150 can be improved, and the light emitting element and the driving element can be protected against unintended current by static electricity or the like Life stability can be improved.

The first electrode E1 is disposed on the p-type semiconductor layer 151 and is electrically connected to the first p-type semiconductor layer 151a and is insulated by the second p-type semiconductor layer 151b and the insulating layer PAS. The second electrode E2 is disposed on the n-type semiconductor layer 153 and is electrically connected to the first n-type semiconductor layer 153a and is insulated by the second n-type semiconductor layer 153b and the insulating film PAS. do.

The first electrode E1 is connected to the first internal electrode IE1 through at least one first contact hole CNT1 disposed in the second p-type semiconductor layer 151b, The first electrode E1 is electrically connected to the second n-type semiconductor layer 153b.

The second electrode E2 is connected to the second internal electrode IE2 through at least one second contact hole CNT2 disposed in the second n-type semiconductor layer 153b, 2 is electrically connected to the second p-type semiconductor layer 151b through the internal electrode IE2.

The p-type semiconductor layer 151 may include an electron blocking layer (EBL) to reduce carrier leakage to the outside of the active layer 152, The first electrode E1 may be directly connected to the first internal electrode IE1 through the first contact hole CNT1 without being formed on the surface of the p-type semiconductor layer 151 without the insulating layer PAS. However, the first internal electrode IE1 is insulated from the p-type semiconductor layer 151 through the insulating film PAS inside the first contact hole CNT1.

The first electrode E1 is connected to the drain electrode DE or the source electrode SE of the driving transistor T2 which is the driving thin film pixel and the second electrode E2 is connected to the common power supply line CPL.

The first electrode E1 described above may be referred to as a p-type electrode or may be referred to as an anode electrode. The second electrode E2 may be referred to as an n-type electrode or a cathode electrode.

The LED element 150 may be a fine element having a width of 10 to 100 mu m and a height of 6 mu m or less. The LED element 150, which is a fine element of the width and height, may be turned upside down when placed on the substrate 110 considering the width and the axis. However, since the light is emitted in the first area Z1 or the second area Z2 even when the LEDs 150 are arranged in the upside-down direction as described above, defects occurring in the process of disposing the LEDs 150 can be minimized.

Each of the first and second electrodes E1 and E2 according to an exemplary embodiment of the present invention includes a metal material such as Au, W, Pt, Si, Ir, Ag, Cu, Ni, Ti, Or more. Each of the first and second electrodes E1 and E2 may be made of a transparent conductive material. The transparent conductive material may be indium tin oxide (ITO) or indium zinc oxide (IZO) But is not limited thereto.

The insulating layer PAS may be formed of a material such as SiNx or SiOx and the p-type semiconductor layer 151, the active layer 152 and the n-type semiconductor layer 153 may be exposed to the outside So as to cover the entire LED element 150.

The first and second electrodes E1 and E2 may be arranged so as to surround the first and second electrodes E1 and E2 so that the first and second electrodes E1 and E2 are not exposed and oxidized. A portion where the pixel electrode PE and the common electrode CE are electrically connected may have an open area.

In addition, each of the p-type semiconductor layer 151, the active layer 152, and the n-type semiconductor layer 153 may be sequentially stacked on the semiconductor substrate. Here, the semiconductor substrate includes a semiconductor material such as a sapphire substrate or a silicon substrate. Such a semiconductor substrate may be used as a growth substrate for growing each of the p-type semiconductor layer 151, the active layer 152 and the n-type semiconductor layer 153, and then separated by a substrate separation process. Here, the substrate separation process may be a laser lift off or a chemical lift off. Accordingly, as the semiconductor substrate for growth is removed from the LED element 150, the LED element 150 can have a relatively thin thickness and can be accommodated in each sub-pixel SP.

FIG. 5A is a schematic perspective view illustrating a light emitting device according to another embodiment of the present invention, and FIG. 5B is a schematic cross-sectional view taken along line A-A 'for illustrating a light emitting device shown in FIG. 5A.

5A and 5B, a description will be made with reference to the previous drawings, but explanations of the configurations that can be explained while explaining similar or preceding drawings will be omitted.

5A and 5B, the p-type semiconductor layer 151 of the LED device 150 is divided into the first p-type semiconductor layer 151a and the second p-type semiconductor layer 151b by the first bank W1, And the first p-type electrode E1-1 is disposed on the first p-type semiconductor layer 151a. The second p-type electrode E1-2 is disposed on the second p-type semiconductor layer 151b and is insulated from the second p-type semiconductor layer 151b by the insulating film PAS, And is electrically connected to the second n-type semiconductor layer 153b through the first internal electrode IE1.

The n-type semiconductor layer 153 of the LED device 150 is divided into the first n-type semiconductor layer 153a and the second n-type semiconductor layer 153b by the second partition W1 and insulated, A first n-type electrode E2-1 is disposed on the first n-type semiconductor layer 153a. The second n-type electrode E2-2 is disposed on the second n-type semiconductor layer 153b and is insulated from the second n-type semiconductor layer 153b by the insulating film PAS, And is electrically connected to the second p-type semiconductor layer 151b through the second internal electrode IE2.

Thus, the first electrode E1 and the second electrode E2 are respectively disposed on the semiconductor layer insulated and separated by the first barrier rib W1 and the second barrier rib W2. The first electrode E1 connected to the first p-type semiconductor layer 151a, the second p-type semiconductor layer 151b, the first n-type semiconductor layer 153a and the second n-type semiconductor layer 153b, And the second electrode E2 are electrically connected to each other.

In the above-described structure, the first p-type semiconductor layer 151a and the first n-type semiconductor layer 153a corresponding to the first region Z1 are electrically connected to the first p-type electrode E1-1 and the first n-type electrode E2-1 and emits light when the voltage applied to the first p-type electrode (E1-1) and the first n-type electrode (E2-1) is in the forward direction, and blocks when the voltage is applied in the reverse direction do.

The second p-type semiconductor layer 151b and the second n-type semiconductor layer 153b correspond to the second p-type electrode E1-2 and the second n-type electrode E2- 2 and the voltage applied to the second p-type electrode E1-2 and the second n-type electrode E2-2 emits light when the voltage is in the reverse direction and blocks when the voltage is applied in the forward direction.

According to the configurations of FIGS. 5A and 5B, the first electrode E1 and the second electrode E2 are subdivided and the direction of the voltage applied according to the semiconductor layer electrically connected to each other The functions of the light emission and the current interruption of the first region Z1 and the second region Z2 can be controlled, respectively. Various embodiments of this will be described later.

6A and 6B are schematic cross-sectional views illustrating various examples of use of a light emitting device according to an embodiment of the present invention.

6A and 6B illustrate some components including the thin film transistor described in the previous drawings and the like, and the overlapping structure described in the previous drawings will be omitted.

6A and 6B, there are two cases of Case 1 and Case 2 in which the LED element 150 is disposed on the substrate 110 and the directions of the first electrode E1 and the second electrode E2 are staggered The LED element 150 may be disposed.

Considering the height and width of the LED device 150, the arrangement of the case 1 and the case 2 will be the most common case. In case 1 and case 2, The first region Z1 and the second region Z2 may change the roles of light emission and current blocking depending on the direction of the current applied to the electrode CE.

Case 1 and Case 2 will be described in detail. In Case 1, when holes are supplied to the first electrode E1 and electrons are supplied to the second electrode E2, in the case of the first region Z1, A voltage is applied to emit light, and in the second region Z2, a reverse voltage is applied, so that the light is not emitted and the current is interrupted.

In Case 2, unlike Case 1, the reverse voltage is applied to the first region Z1 to block the current, but the forward voltage is applied to the second region Z2 to emit light.

That is, even when the LED device 150 is disposed in an upside-down position in the process of disposing the LED device 150, there is no difficulty in connecting and emitting light.

7A to 7C are schematic views for explaining various embodiments of the light emitting device according to the present invention.

The first electrode E1 and the second electrode E2 connected to the first region Z1 and the second region Z2 are subdivided according to the semiconductor layers which are electrically connected to each other as described with reference to FIGS. 5A and 5B, The LED device 150 can be used as various embodiments as follows.

As shown in FIG. 7A, when the electrodes are connected so as to match the directions of the currents applied to the first and second regions Z1 and Z2, one region operates as a light emitting region and the other region Emitting region and serves as an LED device 150 that can be turned on irrespective of the arrangement of the LED device 150 to operate as a current blocking region, and on the other hand, That is, the energy level for the reverse current can be lowered, so that it can serve as a protection circuit for protecting the internal elements and the like.

As shown in FIG. 7B, which is Case 2, when electrodes are arranged so that the directions of the currents applied to the first and second regions Z1 and Z2 are different from each other and the directions of currents are different from each other, The second region Z2 can emit light at a high luminance unlike the case where light is emitted in any one of the first region Z1 and the second region Z2 by emitting light at the same time, And a display device capable of being displayed.

7C, which is Case 3, the first area Z1 and the second area Z2 are set to have independent electrode structures, and one area of the first area Z1 and the second area Z2 is set as a dummy area , It is possible to use a method of repairing a defective pixel by a circuit operation or a method of changing the electrode connection by laser when the first area Z1 is damaged or does not emit light.

As described above, the LED device 150 can be utilized in various ways according to connection of various circuits in addition to the method described above in the use example.

The connection of the electrodes E1 and E2 located under the LED device 150 is performed by flowing a current in a bonded state to induce a high temperature according to the electrical resistance to melt the surface of the electrode and weld the two electrodes at the contacts Or a method of melting and bonding the surface of the electrode connected to the LED element 150 at the back surface of the substrate 110 using a laser may be used.

The common power line CPL connected to the common electrode CE in the above-described structure may be a power supply line for supplying electrons and a power supply line for supplying holes by another configuration, which can be selected by a person skilled in the art In the case of the thin film transistor, there may be a change in the above-described configuration according to the PMOS method or the NMOS method.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

100: Light emitting display
110: substrate
150: LED element
151: first semiconductor layer
152:
153: second semiconductor layer
E1, E1-1, E1-2: the first electrode
E2, E2-1, E2-2: the second electrode

Claims (11)

an n-type semiconductor layer, an active layer, and a p-type semiconductor layer,
At least one p-type electrode on the p-type semiconductor layer; And
And at least one n-type electrode on the n-type semiconductor layer,
The p-type semiconductor layer is divided into a first p-type semiconductor layer and a second p-type semiconductor layer as a first bank,
The n-type semiconductor layer is divided into a first n-type semiconductor layer and a second n-type semiconductor layer by a second bank,
The second p-type semiconductor layer has at least one first contact hole,
The second n-type semiconductor layer has at least one second contact hole,
The p-type electrode is insulated from the second p-type semiconductor layer,
At least one of the p-type electrodes is electrically connected to the second n-type semiconductor layer through the first contact hole,
The n-type electrode is insulated from the second n-type semiconductor layer,
And at least one of the n-type electrodes is electrically connected to the second p-type semiconductor layer through the second contact hole.
The method according to claim 1,
And an insulating film in the first contact hole and the second contact hole, wherein the insulating film is the same material as the first bank and the second bank.
3. The method of claim 2,
And at least one of the p-type electrodes is electrically connected to the second n-type semiconductor layer through a first internal electrode in the first contact hole.
3. The method of claim 2,
And at least one of the n-type electrodes is electrically connected to the second p-type semiconductor layer through a second internal electrode in the second contact hole.
The method according to claim 1,
Wherein the n-type electrode includes a first n-type electrode and a second n-type electrode,
The first n-type electrode is electrically connected to the first n-type semiconductor layer,
And the second n-type electrode is electrically insulated from the second n-type semiconductor layer.
In a pn junction diode including an active layer,
A first region and a second region through the barrier ribs,
An anode electrode and a cathode electrode,
Wherein the anode electrode or the cathode electrode is connected to the pn junction diode so that a forward bias is applied to the first region and a backward bias is applied to the second region.
The method according to claim 6,
Wherein the diode is a vertical type.
The method according to claim 6,
Wherein the first region or the second region is configured to emit light.
A light emitting element connected to a driving element on a substrate; And
And a common electrode connected to the light emitting element,
The light emitting device includes a light emitting region and a device protecting region,
Wherein the device protection region is configured to cut off a current when a constant voltage is applied and to emit light when a reverse voltage is applied.
10. The method of claim 9,
Wherein the light emitting region and the device protection region are switched according to a direction of an applied current.
10. The method of claim 9,
Wherein the light emitting region emits light when a constant voltage is applied, and interrupts a current when a reverse voltage is applied.

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